Showing 1–8 of 8 results for author: Vine, W

Distributed Quantum Computing in Silicon

Authors: Photonic Inc, :, Francis Afzal, Mohsen Akhlaghi, Stefanie J. Beale, Olinka Bedroya, Kristin Bell, Laurent Bergeron, Kent Bonsma-Fisher, Polina Bychkova, Zachary M. E. Chaisson, Camille Chartrand, Chloe Clear, Adam Darcie, Adam DeAbreu, Colby DeLisle, Lesley A. Duncan, Chad Dundas Smith, John Dunn, Amir Ebrahimi, Nathan Evetts, Daker Fernandes Pinheiro, Patricio Fuentes, Tristen Georgiou, Biswarup Guha , et al. (47 additional authors not shown)

Abstract: Commercially impactful quantum algorithms such as quantum chemistry and Shor's algorithm require a number of qubits and gates far beyond the capacity of any existing quantum processor. Distributed architectures, which scale horizontally by networking modules, provide a route to commercial utility and will eventually surpass the capability of any single quantum computing module. Such processors con… ▽ More Commercially impactful quantum algorithms such as quantum chemistry and Shor's algorithm require a number of qubits and gates far beyond the capacity of any existing quantum processor. Distributed architectures, which scale horizontally by networking modules, provide a route to commercial utility and will eventually surpass the capability of any single quantum computing module. Such processors consume remote entanglement distributed between modules to realize distributed quantum logic. Networked quantum computers will therefore require the capability to rapidly distribute high fidelity entanglement between modules. Here we present preliminary demonstrations of some key distributed quantum computing protocols on silicon T centres in isotopically-enriched silicon. We demonstrate the distribution of entanglement between modules and consume it to apply a teleported gate sequence, establishing a proof-of-concept for T centres as a distributed quantum computing and networking platform. △ Less

Submitted 3 June, 2024; originally announced June 2024.

Comments: 14 pages, 13 figures

Strong Microwave Squeezing Above 1 Tesla and 1 Kelvin

Authors: Arjen Vaartjes, Anders Kringhøj, Wyatt Vine, Tom Day, Andrea Morello, Jarryd J. Pla

Abstract: Squeezed states of light have been used extensively to increase the precision of measurements, from the detection of gravitational waves to the search for dark matter. In the optical domain, high levels of vacuum noise squeezing are possible due to the availability of low loss optical components and high-performance squeezers. At microwave frequencies, however, limitations of the squeezing devices… ▽ More Squeezed states of light have been used extensively to increase the precision of measurements, from the detection of gravitational waves to the search for dark matter. In the optical domain, high levels of vacuum noise squeezing are possible due to the availability of low loss optical components and high-performance squeezers. At microwave frequencies, however, limitations of the squeezing devices and the high insertion loss of microwave components makes squeezing vacuum noise an exceptionally difficult task. Here we demonstrate a new record for the direct measurement of microwave squeezing. We use an ultra low loss setup and weakly-nonlinear kinetic inductance parametric amplifiers to squeeze microwave noise 7.8(2) dB below the vacuum level. The amplifiers exhibit a resilience to magnetic fields and permit the demonstration of record squeezing levels inside fields of up to 2 T. Finally, we exploit the high critical temperature of our amplifiers to squeeze a warm thermal environment, achieving vacuum level noise at a temperature of 1.8 K. These results enable experiments that combine squeezing with magnetic fields and permit quantum-limited microwave measurements at elevated temperatures, significantly reducing the complexity and cost of the cryogenic systems required for such experiments. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: Main text: 9 pages, 4 figures. Supplementary information: 21 pages, 17 figures

Latched Detection of Zeptojoule Spin Echoes with a Kinetic Inductance Parametric Oscillator

Authors: Wyatt Vine, Anders Kringhøj, Mykhailo Savytskyi, Daniel Parker, Thomas Schenkel, Brett C. Johnson, Jeffrey C. McCallum, Andrea Morello, Jarryd J. Pla

Abstract: When strongly pumped at twice their resonant frequency, non-linear resonators develop a high-amplitude intracavity field, a phenomenon known as parametric self-oscillations. The boundary over which this instability occurs can be extremely sharp and thereby presents an opportunity for realizing a detector. Here we operate such a device based on a superconducting microwave resonator whose non-linear… ▽ More When strongly pumped at twice their resonant frequency, non-linear resonators develop a high-amplitude intracavity field, a phenomenon known as parametric self-oscillations. The boundary over which this instability occurs can be extremely sharp and thereby presents an opportunity for realizing a detector. Here we operate such a device based on a superconducting microwave resonator whose non-linearity is engineered from kinetic inductance. The device indicates the absorption of low-power microwave wavepackets by transitioning to a self-oscillating state. Using calibrated wavepackets we measure the detection efficiency with zeptojoule energy wavepackets. We then apply it to measurements of electron spin resonance, using an ensemble of $^{209}$Bi donors in silicon that are inductively coupled to the resonator. We achieve a latched-readout of the spin signal with an amplitude that is five hundred times greater than the underlying spin echoes. △ Less

Submitted 6 November, 2023; originally announced November 2023.

In-situ amplification of spin echoes within a kinetic inductance parametric amplifier

Authors: Wyatt Vine, Mykhailo Savytskyi, Daniel Parker, James Slack-Smith, Thomas Schenkel, Jeffrey C. McCallum, Brett C. Johnson, Andrea Morello, Jarryd J. Pla

Abstract: The use of superconducting micro-resonators in combination with quantum-limited Josephson parametric amplifiers has in recent years lead to more than four orders of magnitude improvement in the sensitivity of pulsed Electron Spin Resonance (ESR) measurements. So far, the microwave resonators and amplifiers have been designed as separate components, largely due to the incompatibility of Josephson j… ▽ More The use of superconducting micro-resonators in combination with quantum-limited Josephson parametric amplifiers has in recent years lead to more than four orders of magnitude improvement in the sensitivity of pulsed Electron Spin Resonance (ESR) measurements. So far, the microwave resonators and amplifiers have been designed as separate components, largely due to the incompatibility of Josephson junction-based devices with even moderate magnetic fields. This has led to complex spectrometers that operate under strict environments, creating technical barriers for the widespread adoption of the technique. Here we circumvent this issue by inductively coupling an ensemble of spins directly to a weakly nonlinear microwave resonator, which is engineered from a magnetic field-resilient thin superconducting film. We perform pulsed ESR measurements with a $1$~pL effective mode volume and amplify the resulting spin signal using the same device, ultimately achieving a sensitivity of $2.8 \times 10^3$ spins in a single-shot Hahn echo measurement at a temperature of 400 mK. We demonstrate the combined functionalities at fields as large as 254~mT, highlighting the technique's potential for application under more conventional ESR operating conditions. △ Less

Submitted 6 December, 2022; v1 submitted 21 November, 2022; originally announced November 2022.

A near-ideal degenerate parametric amplifier

Authors: Daniel J. Parker, Mykhailo Savytskyi, Wyatt Vine, Arne Laucht, Timothy Duty, Andrea Morello, Arne L. Grimsmo, Jarryd J. Pla

Abstract: Degenerate parametric amplifiers (DPAs) exhibit the unique property of phase-sensitive gain and can be used to noiselessly amplify small signals or squeeze field fluctuations beneath the vacuum level. In the microwave domain, these amplifiers have been utilized to measure qubits in elementary quantum processors, search for dark matter, facilitate high-sensitivity spin resonance spectroscopy and ha… ▽ More Degenerate parametric amplifiers (DPAs) exhibit the unique property of phase-sensitive gain and can be used to noiselessly amplify small signals or squeeze field fluctuations beneath the vacuum level. In the microwave domain, these amplifiers have been utilized to measure qubits in elementary quantum processors, search for dark matter, facilitate high-sensitivity spin resonance spectroscopy and have even been proposed as the building blocks for a measurement based quantum computer. Until now, microwave DPAs have almost exclusively been made from nonlinear Josephson junctions, which exhibit high-order nonlinearities that limit their dynamic range and squeezing potential. In this work we investigate a new microwave DPA that exploits a nonlinearity engineered from kinetic inductance. The device has a simple design and displays a dynamic range that is four orders of magnitude greater than state-of-the-art Josephson DPAs. We measure phase sensitive gains up to 50 dB and demonstrate a near-quantum-limited noise performance. Additionally, we show that the higher-order nonlinearities that limit other microwave DPAs are almost non-existent for this amplifier, which allows us to demonstrate its exceptional squeezing potential by measuring the deamplification of coherent states by as much as 26 dB. △ Less

Submitted 26 August, 2021; v1 submitted 23 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. Applied 17, 034064 (2022)

SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

Authors: Samuel Ng, Jacob Retallick, Hsi Nien Chiu, Robert Lupoiu, Mohammad Rashidi, Wyatt Vine, Thomas Dienel, Lucian Livadaru, Robert A. Wolkow, Konrad Walus

Abstract: This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational logic. Several simulation tools are included, each able to inform the designer on various aspects of their designs: a ground-state electron configuration finder, a non-equilibrium electron dynamics simulator, and an electri… ▽ More This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational logic. Several simulation tools are included, each able to inform the designer on various aspects of their designs: a ground-state electron configuration finder, a non-equilibrium electron dynamics simulator, and an electric potential landscape solver with clocking electrode support. Simulations have been compared against past experimental results to inform the electron population estimation and dynamic behavior. New logic gates suitable for this platform have been designed and simulated, and a clocked wire has been demonstrated. This work paves the way for the exploration of the vast and fertile design space of atomic silicon dangling bond quantum dot circuits. △ Less

Submitted 14 August, 2018; originally announced August 2018.

Journal ref: IEEE Transactions on Nanotechnology 19, 137 - 146 (2020)

Initiating and monitoring the evolution of single electrons within atom-defined structures

Authors: Mohammad Rashidi, Wyatt Vine, Thomas Dienel, Lucian Livadaru, Jacob Retallick, Taleana Huff, Konrad Walus, Robert Wolkow

Abstract: Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the probe-sample separation we mechanically manipulate the equilibrium position of individual surface silicon atoms and use this to directly switch the charge state of i… ▽ More Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the probe-sample separation we mechanically manipulate the equilibrium position of individual surface silicon atoms and use this to directly switch the charge state of individual DBs. Because this mechanism is based on short range interactions and can be performed without applied bias voltage, we maintain both site-specific selectivity and single-electron control. We extract the short range forces involved with this mechanism by subtracting the long range forces acquired on a dimer vacancy site. As a result of relaxation of the silicon lattice to accommodate negatively charged DBs we observe charge configurations of DB structures that remain stable for many seconds at 4.5 K. Subsequently we use charge manipulation to directly prepare the ground state and metastable charge configurations of DB structures composed of up to six atoms. △ Less

Submitted 29 May, 2018; v1 submitted 28 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. Lett. 121, 166801 (2018)

All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Authors: Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow

Abstract: The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal… ▽ More The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution which motivates the use of scanning tunneling microscopy (STM), however, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming. Among them is all-electronic time-resolved STM, which is used in this work to study dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics. △ Less

Submitted 27 June, 2017; originally announced June 2017.