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A vertical gate-defined double quantum dot in a strained germanium double quantum well
Authors:
Hanifa Tidjani,
Alberto Tosato,
Alexander Ivlev,
Corentin Déprez,
Stefan Oosterhout,
Lucas Stehouwer,
Amir Sammak,
Giordano Scappucci,
Menno Veldhorst
Abstract:
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quant…
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Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. In quantum transport measurements we observe stability diagrams corresponding to a double quantum dot system. We analyze the capacitive coupling to the nearby gates and find two quantum dots accumulated under the central plunger gate. We extract the position and estimated size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation.
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Submitted 24 May, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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Germanium wafers for strained quantum wells with low disorder
Authors:
Lucas E. A. Stehouwer,
Alberto Tosato,
Davide Degli Esposti,
Davide Costa,
Menno Veldhorst,
Amir Sammak,
Giordano Scappucci
Abstract:
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated…
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We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated reduction in short-range scattering allows for a drastic improvement of the disorder properties of the two-dimensional hole gas, measured in several Ge/SiGe heterostructure field-effect transistors. We measure an average low percolation density of (1.22$\pm$0.03)$\times$10$^{10}$ cm$^{-2}$, and an average maximum mobility of (3.4$\pm$0.1)$\times$10$^{6}$ cm$^2$/Vs and quantum mobility of (8.4$\pm$0.5)$\times$10$^{4}$ cm$^2$/Vs when the hole density in the quantum well is saturated to (1.65$\pm$0.02)$\times$10$^{11}$ cm$^{-2}$. We anticipate immediate application of these heterostructures for next-generation, higher-performance Ge spin-qubits and their integration into larger quantum processors.
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Submitted 22 August, 2023; v1 submitted 15 May, 2023;
originally announced May 2023.
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Hard superconducting gap in germanium
Authors:
Alberto Tosato,
Vukan Levajac,
Ji-Yin Wang,
Casper J. Boor,
Francesco Borsoi,
Marc Botifoll,
Carla N. Borja,
Sara Martí-Sánchez,
Jordi Arbiol,
Amir Sammak,
Menno Veldhorst,
Giordano Scappucci
Abstract:
The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free o…
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The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free of subgap states (hard gap) has proven difficult. Here we solve this challenge by developing a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions and, importantly, a hard induced superconducting gap in quantum point contacts. Furthermore, we demonstrate phase control of a Josephson junction and study transport in a gated two-dimensional superconductor-semiconductor array towards scalable architectures. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing.
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Submitted 8 December, 2022; v1 submitted 1 June, 2022;
originally announced June 2022.
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A high-mobility hole bilayer in a germanium double quantum well
Authors:
A. Tosato,
B. M. Ferrari,
A. Sammak,
A. R. Hamilton,
M. Veldhorst,
M. Virgilio,
G. Scappucci
Abstract:
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individua…
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We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0$\times$10$^{11}$ cm$^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$0.69 meV, in agreement with Schrödinger-Poisson simulations.
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Submitted 18 January, 2022;
originally announced January 2022.
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Lightly-strained germanium quantum wells with hole mobility exceeding one million
Authors:
M. Lodari,
O. Kong,
M. Rendell,
A. Tosato,
A. Sammak,
M. Veldhorst,
A. R. Hamilton,
G. Scappucci
Abstract:
We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low densit…
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We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068$m_e$) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.
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Submitted 5 February, 2022; v1 submitted 22 December, 2021;
originally announced December 2021.
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Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Authors:
Brian Paquelet Wuetz,
Merritt P. Losert,
Alberto Tosato,
Mario Lodari,
Peter L. Bavdaz,
Lucas Stehouwer,
Payam Amin,
James S. Clarke,
Susan N. Coppersmith,
Amir Sammak,
Menno Veldhorst,
Mark Friesen,
Giordano Scappucci
Abstract:
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases…
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We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.
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Submitted 29 September, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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Light effective hole mass in undoped Ge/SiGe quantum wells
Authors:
M. Lodari,
A. Tosato,
D. Sabbagh,
M. A. Schubert,
G. Capellini,
A. Sammak,
M. Veldhorst,
G. Scappucci
Abstract:
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal damping of the amplitude of Shubnikov-de Haas oscillations, we meas…
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We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal damping of the amplitude of Shubnikov-de Haas oscillations, we measure a light mass of $0.061m_e$ at a density of $2.2\times10^{11}$ cm$^{-2}$. We confirm the theoretically predicted dependence of increasing mass with density and by extrapolation we find an effective mass of $\sim0.05m_e$ at zero density, the lightest effective mass for a planar platform that demonstrated spin qubits in quantum dots.
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Submitted 20 May, 2019;
originally announced May 2019.
