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Bright-Dark Exciton Interplay Evidenced by Spin Polarization in CdSe/CdMnS Nanoplatelets
Authors:
Elena V. Shornikova,
Dmitri R. Yakovlev,
Danil O. Tolmachev,
Mikhail A. Prosnikov,
Peter C. M. Christianen,
Sushant Shendre,
Furkan Isik,
Savas Delikanli,
Hilmi Volkan Demir,
Manfred Bayer
Abstract:
Diluted magnetic semiconductor (DMS) colloidal nanocrystals demonstrate remarkable magneto-optical properties. However, the behavior of circular polarization of their emission in high magnetic fields remains unclear. We measure magneto-optical properties of colloidal CdSe/CdMnS nanoplatelets in high magnetic fields up to 30 T and at cryogenic temperatures. The degree of circular polarization of ph…
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Diluted magnetic semiconductor (DMS) colloidal nanocrystals demonstrate remarkable magneto-optical properties. However, the behavior of circular polarization of their emission in high magnetic fields remains unclear. We measure magneto-optical properties of colloidal CdSe/CdMnS nanoplatelets in high magnetic fields up to 30 T and at cryogenic temperatures. The degree of circular polarization of photoluminescence demonstrates non-monotonous behavior in a magnetic field. In low magnetic fields, the polarization degree is positive, due to an exchange interaction of excitons with localized spins of magnetic Mn ions. The exchange interaction is strong enough to overcome the intrinsic Zeeman splitting, which provides negatively polarized emission in nonmagnetic CdSe/CdS nanoplatelets. After reaching a maximum the polarization degree starts to decrease and reverses the sign to negative in high magnetic fields. The critical magnetic field, in which the sign is reversed, increases when temperature is elevated. We develop a model, which explains this behavior by an interplay of bright and dark exciton recombination.
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Submitted 2 July, 2024; v1 submitted 10 April, 2024;
originally announced April 2024.
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Deep optical cooling of coupled nuclear spin-spin and quadrupole reservoirs in a GaAs/(Al,Ga)As quantum well
Authors:
M. Kotur,
D. O. Tolmachev,
V. M. Litvyak,
K. V. Kavokin,
D. Suter,
D. R. Yakovlev,
M. Bayer
Abstract:
The selective cooling of $^{75}$As spins by optical pumping followed by adiabatic demagnetization in the rotating frame is realized in a nominally undoped GaAs/(Al,Ga)As quantum well. The rotation of 6 kG strong Overhauser field at the $^{75}$As Larmor frequency of 5.5 MHz is evidenced by the dynamic Hanle effect. Despite the presence of the quadrupole induced nuclear spin splitting, it is shown t…
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The selective cooling of $^{75}$As spins by optical pumping followed by adiabatic demagnetization in the rotating frame is realized in a nominally undoped GaAs/(Al,Ga)As quantum well. The rotation of 6 kG strong Overhauser field at the $^{75}$As Larmor frequency of 5.5 MHz is evidenced by the dynamic Hanle effect. Despite the presence of the quadrupole induced nuclear spin splitting, it is shown that the rotating $^{75}$As magnetization is uniquely determined by the spin temperature of coupled spin-spin and quadrupole reservoirs. The dependence of heat capacity of these reservoirs on the external magnetic field direction with respect to crystal and structure axes is investigated. The lowest nuclear spin temperature achieved is 0.54 $μ$K, which is the record low value for semiconductors and semiconductor nanostructures.
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Submitted 8 February, 2021;
originally announced February 2021.
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Magneto-optics of excitons interacting with magnetic ions in CdSe/CdMnS colloidal nanoplatelets
Authors:
E. V. Shornikova,
D. R. Yakovlev,
D. O. Tolmachev,
V. Yu. Ivanov,
I. V. Kalitukha,
V. F. Sapega,
D. Kudlacik,
Yu. G. Kusrayev,
A. A. Golovatenko,
S. Shendre,
S. Delikanli,
H. V. Demir,
M. Bayer
Abstract:
Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconduc…
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Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconductor layers. The inclusion of the magnetic Mn$^{2+}$ ions is evidenced by three magneto-optical techniques using high magnetic fields up to 15 T: polarized photoluminescence, optically detected magnetic resonance, and spin-flip Raman scattering. In particular, information on the Mn$^{2+}$ concentration in the CdS shell layers can be obtained from the spin-lattice relaxation dynamics of the Mn$^{2+}$ spin system.
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Submitted 13 May, 2020;
originally announced May 2020.
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High-efficiency optical pumping of nuclear polarization in a GaAs quantum well
Authors:
R. W. Mocek,
V. L. Korenev,
M. Bayer,
M. Kotur,
R. I. Dzhioev,
D. O. Tolmachev,
G. Cascio,
K. V. Kavokin,
D. Suter
Abstract:
The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a maximum nuclear field of 0.9 T in a tilted external magnetic field of 1 T strength only. This high efficiency is due to a low leakage of spin out of the polarized nuc…
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The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a maximum nuclear field of 0.9 T in a tilted external magnetic field of 1 T strength only. This high efficiency is due to a low leakage of spin out of the polarized nuclear system, because mechanisms of spin relaxation other than the hyperfine interaction are strongly suppressed, leading to a long nuclear relaxation time of up to 1000 s. A key ingredient to that end is the low impurity concentration inside the heterostructure, while the electrostatic potential from charged impurities in the surrounding barriers becomes screened through illumination by which the spin relaxation time is increased compared to keeping the system in the dark. This finding indicates a strategy for obtaining high nuclear spin polarization as required for long-lasting carrier spin coherence.
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Submitted 9 November, 2017; v1 submitted 31 July, 2017;
originally announced August 2017.
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Pumping dynamics of nuclear spins in GaAs quantum wells
Authors:
Raphael W. Mocek,
Danil O. Tolmachev,
Giovanni Cascio,
Dieter Suter
Abstract:
Irradiating a semiconductor with circularly polarized light creates spin-polarized charge carriers. If the material contains atoms with non-zero nuclear spin, they interact with the electron spins via the hyperfine coupling. Here, we consider GaAs/AlGaAs quantum wells, where the conduction-band electron spins interact with three different types of nuclear spins. The hyperfine interaction drives a…
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Irradiating a semiconductor with circularly polarized light creates spin-polarized charge carriers. If the material contains atoms with non-zero nuclear spin, they interact with the electron spins via the hyperfine coupling. Here, we consider GaAs/AlGaAs quantum wells, where the conduction-band electron spins interact with three different types of nuclear spins. The hyperfine interaction drives a transfer of spin polarization to the nuclear spins, which therefore acquire a polarization that is comparable to that of the electron spins. In this paper, we analyze the dynamics of the optical pumping process in the presence of an external magnetic field while irradiating a single quantum well with a circularly polarized laser. We measure the time dependence of the photoluminescence polarization to monitor the buildup of the nuclear spin polarization and thus the average hyperfine interaction acting on the electron spins. We present a simple model that adequately describes the dynamics of this process and is in good agreement with the experimental data.
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Submitted 8 September, 2016;
originally announced September 2016.
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All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
Authors:
D. Simin,
V. A. Soltamov,
A. V. Poshakinskiy,
A. N. Anisimov,
R. A. Babunts,
D. O. Tolmachev,
E. N. Mokhov,
M. Trupke,
S. A. Tarasenko,
A. Sperlich,
P. G. Baranov,
V. Dyakonov,
G. V. Astakhov
Abstract:
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp…
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We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$.
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Submitted 28 May, 2016; v1 submitted 15 November, 2015;
originally announced November 2015.
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Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure
Authors:
V. A. Soltamov,
B. V. Yavkin,
D. O. Tolmachev,
R. A. Babunts,
A. G. Badalyan,
V. Yu. Davydov,
E. N. Mokhov,
I. I. Proskuryakov,
S. B. Orlinskii,
P. G. Baranov
Abstract:
We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess unique characteristics such as ODMR contrast and optical spin alignment existing at temperatures up to 250$^\circ$C. Thus the concept of optically addressable silicon vacancy related…
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We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess unique characteristics such as ODMR contrast and optical spin alignment existing at temperatures up to 250$^\circ$C. Thus the concept of optically addressable silicon vacancy related centers with half integer ground spin state is extended to the wide class of SiC rhombic polytypes. The structure of these centers, which is a fundamental problem for quantum applications, has been established using high frequency ENDOR. It has been shown that a family of siliconvacancy related centers is a negatively charged silicon vacancy in the paramagnetic state with the spin $S= 3/2$, V$_\textrm{Si}^-$, perturbed by neutral carbon vacancy in non-paramagnetic state, V$_\textrm{C}^0$, having no covalent bond with the silicon vacancy and located adjacently to the silicon vacancy on the c crystal axis.
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Submitted 18 June, 2015;
originally announced June 2015.
