Showing 1–7 of 7 results for author: Tabrizian, R

Aluminum Scandium Nitride as a Functional Material at 1000°C

Authors: Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X. -L. Feng, Mark Sheplak, Roozbeh Tabrizian

Abstract: Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000°C, making it suitable for use in aerospace, hypersonics, deep-well, and… ▽ More Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000°C, making it suitable for use in aerospace, hypersonics, deep-well, and nuclear reactor systems. Tantalum silicide (TaSi2)/Al0.7Sc0.3N/TaSi2 capacitors were fabricated and characterized across a wide temperature range, revealing robust ferroelectric and dielectric properties, along with significant enhancement in piezoelectric performance. At 1000°C, the ferroelectric hysteresis loops showed a substantial reduction in coercive field from 4.3 MV/cm to 1.2 MV/cm, while the longitudinal piezoelectric coefficient increased nearly tenfold, reaching 75.1 pm/V at 800°C. Structural analysis via scanning and transmission electron microscopy confirmed the integrity of the TaSi2/Al0.7Sc0.3N interfaces, even after exposure to extreme temperatures. Furthermore, the electromechanical coupling coefficient was calculated to increase by over 500%, from 12.9% at room temperature to 82% at 700°C. These findings establish AlScN as a versatile material for high-temperature ferroelectric, piezoelectric, and dielectric applications, offering unprecedented thermal stability and functional enhancement. △ Less

Submitted 22 October, 2024; originally announced October 2024.

Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing

Authors: Shubham Mondal, Md Mehedi Hasan Tanim, Garrett Baucom, Shaurya S. Dabas, Jinghan Gao, Venkateswarlu Gaddam, Jiangnan Liu, Aiden Ross, Long-Qing Chen, Honggyu Kim, Roozbeh Tabrizian, Zetian Mi

Abstract: The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses, critical to a broad range of acoustic, electronic, photonic, and quantum devices and applications. Experimentally, however, the measured piezoelectric responses of nitride semiconductors are far below what theory has p… ▽ More The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses, critical to a broad range of acoustic, electronic, photonic, and quantum devices and applications. Experimentally, however, the measured piezoelectric responses of nitride semiconductors are far below what theory has predicted. Here, we show that the use of a simple, scalable, post-growth thermal annealing process can dramatically boost the piezoelectric response of ScAlN thin films. We achieve a remarkable 3.5-fold increase in the piezoelectric modulus, d33 for 30% Sc content ScAlN, from 12.3 pC/N in the as-grown state to 45.5 pC/N, which is eight times larger than that of AlN. The enhancement in piezoelectricity has been unambiguously confirmed by three separate measurement techniques. Such a dramatic enhancement of d33 has been shown to impact the effective electromechanical coupling coefficient kt2 : increasing it from 13.8% to 76.2%, which matches the highest reported values in millimeter thick lithium niobate films but is achieved in a 100 nm ScAlN with a 10,000 fold reduction in thickness, thus promising extreme frequency scaling opportunities for bulk acoustic wave resonators for beyond 5G applications. By utilizing a range of material characterization techniques, we have elucidated the underlying mechanisms for the dramatically enhanced piezoelectric responses, including improved structural quality at the macroscopic scale, more homogeneous and ordered distribution of domain structures at the mesoscopic scale, and the reduction of lattice parameter ratio (c/a) for the wurtzite crystal structure at the atomic scale. Overall, the findings present a simple yet highly effective pathway that can be extended to other material families to further enhance their piezo responses. △ Less

Submitted 28 August, 2024; originally announced August 2024.

2D Magnetic Heterostructures: Spintronics and Quantum Future

Authors: Bingyu Zhang, Pengcheng Lu, Roozbeh Tabrizian, Philip X. -L. Feng, Yingying Wu

Abstract: The discovery of two-dimensional (2D) magnetism within atomically thin structures derived from layered crystals has opened up a new realm for exploring magnetic heterostructures. This emerging field provides a foundational platform for investigating unique physical properties and exquisite phenomena at the nanometer and molecular/atomic scales. By engineering 2D interfaces using physical methods a… ▽ More The discovery of two-dimensional (2D) magnetism within atomically thin structures derived from layered crystals has opened up a new realm for exploring magnetic heterostructures. This emerging field provides a foundational platform for investigating unique physical properties and exquisite phenomena at the nanometer and molecular/atomic scales. By engineering 2D interfaces using physical methods and selecting interlayer interactions, we unlock the potential for extraordinary exchange dynamics. This potential extends to high-performance and high-density magnetic memory applications, as well as future advancements in neuromorphic and quantum computing. This review delves into recent advances in 2D magnets, elucidates the mechanisms behind 2D interfaces, and highlights the development of 2D devices for spintronics and quantum information. Particular focus is placed on 2D magnetic heterostructures with topological properties, promising for a resilient and low-error information system. Finally, we discuss the trends of 2D heterostructures for future electronics, considering the challenges and opportunities from physics, material synthesis, and technological prospective. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 22 pages, 4 figures

The Ferroelectric-Gate Fin Microwave Acoustic Signal Processor

Authors: Faysal Hakim, Nicholas Rudawski, Troy Tharpe, Roozbeh Tabrizian

Abstract: Wireless communication through dynamic spectrum allocation over microwave bands, essential to accommodate exponentially growing data traffic, requires massive array of radio-frequency (RF) filters for adaptive signal shaping at arbitrary frequencies. However, conventional RF filters based on planar acoustic resonators are incapable to realize such massive integrated arrays, due to their large foot… ▽ More Wireless communication through dynamic spectrum allocation over microwave bands, essential to accommodate exponentially growing data traffic, requires massive array of radio-frequency (RF) filters for adaptive signal shaping at arbitrary frequencies. However, conventional RF filters based on planar acoustic resonators are incapable to realize such massive integrated arrays, due to their large footprint and limited on-chip frequency scalability. Here, we present a signal processor enabled by integration of three-dimensional ferroelectric-gate fin (FGF) nano-acoustic resonators with extreme frequency tailorability and large-scale integrability. FGFs are created by growing atomic-layered ferroelectric hafnia-zirconia transducers on silicon nano-fins, operate in bulk acoustic modes with lithographically scalable frequency over 3-28 GHz, and provide record high frequency - quality factor - electromechanical coupling product (f.Q.kt2) of 19.4 x 1010 (at ~11GHz). A monolithic filter-array covering 9-12 GHz is also demonstrated by on-chip electrical coupling of FGFs. This demonstration highlights the potential of FGF resonators to realize chip-scale adaptive processors extendable to millimeter-wave frequencies. △ Less

Submitted 2 February, 2023; originally announced February 2023.

Complementary-Switchable Dual-Mode SHF Scandium-Aluminum Nitride BAW Resonator

Authors: Dicheng Mo, Shaurya Dabas, Sushant Rassay, Roozbeh Tabrizian

Abstract: This article presents a bulk acoustic wave (BAW) resonator with complementary switchable operation in the first and second thickness extensional modes (TE1 and TE2) at 7.04 and 13.4 GHz. Two ferroelectric scandium aluminum nitride (Sc0.28Al0.72N) layers are alternatively stacked with three molybdenum electrodes, creating a laminated BAW resonator with independent switchability of polarization in c… ▽ More This article presents a bulk acoustic wave (BAW) resonator with complementary switchable operation in the first and second thickness extensional modes (TE1 and TE2) at 7.04 and 13.4 GHz. Two ferroelectric scandium aluminum nitride (Sc0.28Al0.72N) layers are alternatively stacked with three molybdenum electrodes, creating a laminated BAW resonator with independent switchability of polarization in constituent transducers. This enables intrinsic switchability of the resonator in TE1 and TE2 modes, when the ferroelectric Sc0.28Al0.72N layers are poled in the same or opposite directions, respectively. A generalized analytical proof of complementary switchable operation, extended to laminated BAW resonators consisting of arbitrary number of ScxAl1-xN layers, is presented. For the demonstrated prototype, electromechanical coupling coefficients ( k2t ) of 10.1% and 10.7%, and quality factors ( Q ) of 115 and 151, are measured for TE1 and TE2 modes, respectively, when the resonator is configured in the corresponding operation states. Besides showing intrinsically configurable operation in super-high-frequency regime with high k2t and Q , a laminated Sc0.28Al0.72N BAW resonator exhibits repeatable operation under switching cycles. △ Less

Submitted 27 July, 2022; v1 submitted 6 May, 2022; originally announced May 2022.

Growth of C-Axis Textured AlN Films on Vertical Sidewalls of Silicon Micro-Fins

Authors: Mehrdad Ramezani, Valeriy Felmetsger, Nicholas Rudawski, Roozbeh Tabrizian

Abstract: A fabrication process is developed to grow c-axis textured aluminum nitride (AlN) films on the sidewall of single crystal silicon (Si) micro-fins to realize fin bulk acoustic wave resonators (FinBAR). FinBARs enable ultra-dense integration of high quality-factor (Q) resonators and low-loss filters on a small chip footprint and provide extreme lithographical frequency scalability over ultra- and su… ▽ More A fabrication process is developed to grow c-axis textured aluminum nitride (AlN) films on the sidewall of single crystal silicon (Si) micro-fins to realize fin bulk acoustic wave resonators (FinBAR). FinBARs enable ultra-dense integration of high quality-factor (Q) resonators and low-loss filters on a small chip footprint and provide extreme lithographical frequency scalability over ultra- and super-high-frequency regimes. Si micro-fins with large aspect ratio are patterned and their sidewall surfaces are atomically smoothened. The reactive magnetron sputtering AlN deposition is engineered to optimize the hexagonal crystallinity of the sidewall AlN film with c-axis perpendicular to the sidewall of Si micro-fin. The effect of bottom metal electrode and surface roughness on the texture and crystallinity of the sidewall AlN film is explored. The atomic-layer-deposited platinum film with (111) crystallinity is identified as a suitable bottom electrode for deposition of c-axis textured AlN on the sidewall with c-axis orientation of 88.5 deg and arc-angle of ~12 deg around (002) diffraction spot over film thickness. 4.2 GHz FinBAR prototype is implemented showing a Q of 1,574 and effective electromechanical coupling (keff2) of 2.75%, when operating in 3rd width-extensional resonance mode. The lower measured Q and keff2 compared to simulations highlights the effect of granular texture of sidewall AlN film on limiting the performance of FinBARs. The developed c-axis textured sidewall AlN film technology paves the way for realization and monolithic integration of multi-frequency and multi-band FinBAR spectral processors for the emerging carrier aggregated wireless communication systems. △ Less

Submitted 28 July, 2020; v1 submitted 11 July, 2019; originally announced July 2019.

Atomically Engineered Hf0.5Zr0.5O2 Integrated Nano-Electromechanical Transducers

Authors: Mayur Ghatge, Glen Walters, Toshikazu Nishida, Roozbeh Tabrizian

Abstract: The monolithic integration of electromechanical transduction at the nanoscale with advanced CMOS is among the most important challenges of semiconductor electronic systems to leverage the multi-domain sensing, actuation, and resonance properties of nano-mechanical systems. Here we report on the demonstration of vibrating devices enabled by atomically engineered ferroelectric Hf0.5Zr0.5O2 thin film… ▽ More The monolithic integration of electromechanical transduction at the nanoscale with advanced CMOS is among the most important challenges of semiconductor electronic systems to leverage the multi-domain sensing, actuation, and resonance properties of nano-mechanical systems. Here we report on the demonstration of vibrating devices enabled by atomically engineered ferroelectric Hf0.5Zr0.5O2 thin films with a variety of mechanical resonance modes with frequencies (f0) between 340kHz - 13GHz and frequency-quality (Q) factor products (f0 x Q) up to 3.97 x 10^12. Experiments based on electrical and optical probing elucidate and quantify the role of the electrostrictive effect in the electromechanical transduction behavior of the Hf0.5Zr0.5O2 film. We further demonstrate the role of nonlinear electromechanical scattering on the operation of Hf0.5Zr0.5O2 transduced resonators. This investigation also highlights the potential of atomically engineered ferroelectric Hf0.5Zr0.5O2 transducers for new classes of CMOS-monolithic linear and nonlinear nanomechanical resonators in centimeter- and millimeter-wave frequencies. △ Less

Submitted 11 April, 2019; originally announced April 2019.

Journal ref: Nature Electronics (2019)