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Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
Authors:
D. Sztenkiel,
K. Gas,
N. Gonzalez Szwacki,
M. Foltyn,
C. Sliwa,
T. Wojciechowski,
J. Z. Domagala,
D. Hommel,
M. Sawicki,
T. Dietl
Abstract:
We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we…
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We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{1-x}$Te$_3$, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature.
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Submitted 19 June, 2024;
originally announced June 2024.
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Introducing the step Monte Carlo method for simulating dynamic properties
Authors:
Dariusz Sztenkiel
Abstract:
In this work, we introduce a simple modification of the Monte Carlo algorithm, which we call step Monte Carlo (sMC). The sMC approach allows to simulate processes far from equilibrium and obtain information about the dynamic properties of the system under investigation. In the approach proposed here the probability of accepting the final (trial) state depends on the activation energy, not on the r…
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In this work, we introduce a simple modification of the Monte Carlo algorithm, which we call step Monte Carlo (sMC). The sMC approach allows to simulate processes far from equilibrium and obtain information about the dynamic properties of the system under investigation. In the approach proposed here the probability of accepting the final (trial) state depends on the activation energy, not on the relative energy between the final and initial state. This barrier height is probed on an ongoing basis, by generating intermediate states along the path connecting the initial and trial positions. Importantly, to calculate the activation energy, our model only requires knowledge of the Hamiltonian without having to introduce additional input parameters such as transition rates etc. The details of sMC are explained for the case of a simple spin model. The comparison of its results with the ones obtained within the frame of stochastic Landau-Lifshitz-Gilbert indicates the correctness of sMC. In our opinion, the proposed here method can be applied to simulate other processes, for example dynamics of classical atoms and complex fluids, diffusion, nucleation, surface adsorption and crystal growth processes.
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Submitted 12 October, 2022; v1 submitted 19 September, 2022;
originally announced September 2022.
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Spin orbital reorientation transitions induced by magnetic field
Authors:
Dariusz Sztenkiel
Abstract:
Here we report on a new effect similar to the spin reorientation transition (SRT) that takes place at two magnetic fields of $B_{SORT1}$ and $B_{SORT2}$. The effect is observed in the magnetization curves of small Mn$^{3+}$ magnetic clusters in the wurtzite GaN (being in a paramagnetic state) calculated using crystal field model approach. The obtained results suggest that the computed magnetic ani…
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Here we report on a new effect similar to the spin reorientation transition (SRT) that takes place at two magnetic fields of $B_{SORT1}$ and $B_{SORT2}$. The effect is observed in the magnetization curves of small Mn$^{3+}$ magnetic clusters in the wurtzite GaN (being in a paramagnetic state) calculated using crystal field model approach. The obtained results suggest that the computed magnetic anisotropy (MA) reverses its sign on increasing $B$ across $B_{SORT}$. Detailed analysis show however that MA is unchanged for high magnetic fields. We show that the observed effect arises from the interplay of the crystalline environment and the spin-orbit coupling $λ\hat{\textbf{S}} \hat{\textbf{L}}$, therefore we name it spin orbital reorientation transition (SORT). The value of $B_{SORT1}$ depends on the crystal field model parameters and the number of ions $N$ in a given cluster, whereas $B_{SORT2}$ is controlled mostly by the magnitude of the spin-orbit coupling $λ$. The explanation of SORT is given in terms of the spin $M_S$ and orbital momentum $M_L$ contributions to the total magnetization $M = M_S + M_L$. The similar effect should also be present in other materials with not completely quenched (non zero) orbital angular momentum $L$, a uniaxial magnetic anisotropy and the positive value of $λ$.
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Submitted 15 February, 2022;
originally announced February 2022.
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Comparative study of magnetic properties of Mn$^{3+}$ magnetic clusters in GaN using classical and quantum mechanical approach
Authors:
Yadhu Krishnan Edathumkandy,
Dariusz Sztenkiel
Abstract:
Currently, simulations of many-body quantum systems are known to be computationally too demanding to be solved on classical computers. The main problem is that the computation time and memory necessary for performing the calculations usually grow exponentially with the number of particles $N$. An efficient approach to simulate many-body quantum systems is the use of classical approximation. Howeve…
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Currently, simulations of many-body quantum systems are known to be computationally too demanding to be solved on classical computers. The main problem is that the computation time and memory necessary for performing the calculations usually grow exponentially with the number of particles $N$. An efficient approach to simulate many-body quantum systems is the use of classical approximation. However, it is known that at least at low temperatures, the allowed spin fluctuations in this approach are overestimated what results in enhanced thermal fluctuations. It is therefore timely and important to assess the validity of the classical approximation. To this end, in this work, we compare the results of numerical calculations of small Mn$^{3+}$ magnetic clusters in GaN, where the Mn spins are treated classically with those where they are treated quantum-mechanically (crystal field model). In the first case, we solve the Landau-Lifshitz-Gilbert (LLG) equation that describes the precessional dynamics of spins represented by classical vectors. On the other hand, in the crystal field model, the state of Mn$^{3+}$ ion ($d^4$ configuration with $S=2$, $L=2$) is characterized by the set of orbital and spin quantum numbers $|m_s,m_L>$. Particular attention is paid to use numerical parameters that ensure the same single ion magnetic anisotropy in both classical and quantum approximation. Finally, a detailed comparative study of magnetization $\mathbf{M}(\mathbf{H}, T)$ as a function of the magnetic field $\mathbf{H}$, temperature $T$, number of ions in a given cluster $N$ and the strength of super-exchange interaction $J$, obtained from both approaches will be presented.
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Submitted 3 August, 2021;
originally announced August 2021.
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Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn$^{3+}$ ions in GaN
Authors:
D. Sztenkiel,
K. Gas,
J. Z. Domagala,
D. Hommel,
M. Sawicki
Abstract:
A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentrations, $x \lesssim 0.01$, the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In…
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A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentrations, $x \lesssim 0.01$, the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In order to obtain the description of magnetization in (Ga,Mn)N in the presence of interacting magnetic centers, we extend the previous model of a single substitutional Mn$^{3+}$ ion in GaN by considering pairs, triplets and quartets of Mn$^{3+}$ ions coupled by a ferromagnetic superexchange interaction. Using this approach we investigate how the magnetic properties, particularly the magnitude of the uniaxial anisotropy field, change as the number of magnetic Mn$^{3+}$ ions in a given cluster increases from 1 to 4. Our simulations are then exploited in explaining experimental magnetic properties of Ga$_{1-x}$Mn$_x$N with $x \cong 0.03$, where the presence of small magnetic clusters gains in significance. As a result the approximate lower and upper limits for the values of exchange couplings between Mn$^{3+}$ ions in GaN, being in nearest neighbors $J_{\mathrm{nn}}$ and next nearest neighbors $J_{\mathrm{nnn}}$ positions, respectively, are established.
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Submitted 1 December, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
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Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate
Authors:
Jaroslaw Wrobel,
Gilberto Umana-Membreno,
Jacek Boguski,
Dariusz Sztenkiel,
Pawel Piotr Michalowski,
Piotr Martyniuk,
Lorenzo Faraone,
Jerzy Wrobel,
Antoni Rogalski
Abstract:
High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most pop…
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High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most populated holelike channel below 55 K. The multilayer model concluded from the QMSA results has been compared with nextnano simulation.
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Submitted 2 August, 2019; v1 submitted 31 July, 2019;
originally announced August 2019.
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Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
Authors:
Karolina Kalbarczyk,
Krzysztof Dybko,
Katarzyna Gas,
Dariusz Sztenkiel,
Marek Foltyn,
Magdalena Majewicz,
Piotr Nowicki,
Elżbieta Łusakowska,
Detlef Hommel,
Maciej Sawicki
Abstract:
Schottky barrier height and the ideality factor $η$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10M$Ω$ resistances already at room temperature are indicative that a nearly conductive-dislocation-free elec…
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Schottky barrier height and the ideality factor $η$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10M$Ω$ resistances already at room temperature are indicative that a nearly conductive-dislocation-free electrical properties are achieved. The analysis of temperature dependence of the forward bias I-V characteristics in the frame of the thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to be slightly lower but close in character to other metal/GaN junctions. However, the large magnitudes of the ideality factor $η$>1.5 for T$\leqslant$300K, point to a sizable current blocking in the structure. While it remains to be seen whether it is due to the presence of (Ga,Mn)N barrier or due to other factors which reduce the effective area of the junction, an existence of a substantial serial resistance may hold the key to explain similar observations in other devices of a corresponding structure and technological relevance.
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Submitted 23 July, 2019;
originally announced July 2019.
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Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N
Authors:
Katarzyna Gas,
Jaroslaw Z. Domagala,
Rafal Jakiela,
Gerd Kunert,
Piotr Dluzewski,
Edyta Piskorska-Hommel,
Wojciech Paszkowicz,
Dariusz Sztenkiel,
Maciej J. Winiarski,
Dorota Kowalska,
Rafal Szukiewicz,
Tomasz Baraniecki,
Andrzej Miszczuk,
Detlef Hommel,
Maciej Sawicki
Abstract:
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powd…
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A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powder-like and high resolution X-ray diffraction, which do not reveal any crystallographic phase separation, clusters or nanocrystals, even at the lowest Tg. Our synchrotron based X-ray absorption near-edge spectroscopy supported by density functional theory modelling and superconducting quantum interference device magnetometry results point to the predominantly +3 configuration of Mn in GaN and thus the ferromagnetic phase has been observed in layers with x > 5% at 3 < T < 10 K. The main detrimental effect of Tg reduced to 590 °C is formation of flat hillocks, which increase the surface root-mean-square roughness, but only to mere 3.3 nm. Fine substrates surface temperature mapping has shown that the magnitudes of both x and Curie temperature (Tc) correlate with local Tg. It has been found that a typical 10 °C variation of Tg across 1 inch substrate can lead to 40% dispersion of Tc. The established here strong sensitivity of Tc on Tg turns magnetic measurements into a very efficient tool providing additional information on local Tg, an indispensable piece of information for growth mastering of ternary compounds in which metal species differ in almost every aspect of their growth related parameters determining the kinetics of the growth. We also show that the precise determination of Tc by two different methods, each sensitive to different moments of Tc distribution, may serve as a tool for quantification of spin homogeneity within the material.
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Submitted 8 March, 2018;
originally announced March 2018.
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Stretching magnetism with an electric field in a nitride semiconductor
Authors:
D. Sztenkiel,
M. Foltyn,
G. P. Mazur,
R. Adhikari,
K. Kosiel,
K. Gas,
M. Zgirski,
R. Kruszka,
R. Jakiela,
Tian Li,
A. Piotrowska,
A. Bonanni,
M. Sawicki,
T. Dietl
Abstract:
By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap region, and the Mn3+ ions show strong single-ion anisotropy. We establish that (Ga,Mn)N sustains an electric field up to at least 5 MV/cm, indicating that…
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By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap region, and the Mn3+ ions show strong single-ion anisotropy. We establish that (Ga,Mn)N sustains an electric field up to at least 5 MV/cm, indicating that Mn doping turns GaN into a worthwhile semi-insulating material. Under these conditions, the magnetoelectric coupling may be driven by the inverse piezoelectric effect that stretches the elementary cell along the c axis and, thus, affects the magnitude of magnetic anisotropy. We develop a corresponding theory and show that it describes the experimentally determined dependence of magnetization on the electric field quantitatively with no adjustable parameters as a function of the magnetic field and temperature. In this way, our work bridges two research domains developed so far independently: piezoelectricity of wurtzite semiconductors and electrical control of magnetization in hybrid and composite magnetic structures containing piezoelectric components.
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Submitted 2 November, 2016; v1 submitted 23 April, 2016;
originally announced April 2016.
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Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN
Authors:
Thibaut Devillers,
Mauro Rovezzi,
Nevill Gonzalez Szwacki,
Sylwia Dobkowska,
Wiktor Stefanowicz,
Dariusz Sztenkiel,
Andreas Grois,
Jan Suffczyński,
Andrea Navarro-Quezada,
Bogdan Faina,
Tian Li,
Pieter Glatzel,
Francesco d'Acapito,
Rafał Jakieła,
Maciej Sawicki,
Jacek A. Majewski,
Tomasz Dietl,
Alberta Bonanni
Abstract:
Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron technique…
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Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codoping of GaN:Mn with Mg allows to control the Mn$^{n+}$ charge and spin state in the range $3\le n\le 5$ and $2\ge S\ge 1$. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg$_k$, where the number of ligands $k$ is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.
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Submitted 13 November, 2013;
originally announced November 2013.
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Thickness dependence of magnetic properties of (Ga,Mn)As
Authors:
O. Proselkov,
D. Sztenkiel,
W. Stefanowicz,
M. Aleszkiewicz,
J. Sadowski,
T. Dietl,
M. Sawicki
Abstract:
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We…
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We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate mod- ifications to take a nonuniform distribution of holes and Mn cations into account. The described here effects are of practical importance for employing thin and ultrathin layers of (Ga,Mn)As or relative compounds in concept spintronics devices, like resonant tunneling devices in particular.
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Submitted 22 May, 2012;
originally announced May 2012.
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Homogenous and heterogeneous magnetism in (Zn,Co)O
Authors:
M. Sawicki,
E. Guziewicz,
M. I. Lukasiewicz,
O. Proselkov,
I. A. Kowalik,
W. Lisowski,
P. Dluzewski,
A. Wittlin,
M. Jaworski,
A. Wolska,
W. Paszkowicz,
R. Jakiela,
B. S. Witkowski,
L. Wachnicki,
M. T. Klepka,
F. J. Luque,
D. Arvanitis,
J. W. Sobczak,
M. Krawczyk,
A. Jablonski,
W. Stefanowicz,
D. Sztenkiel,
M. Godlewski,
T. Dietl
Abstract:
A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient to produce truly random Zn1-xCoxO mixed crystals with x up to 40%. Conversely, in the superlattice structures the interdiffusion is not strong enough t…
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A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient to produce truly random Zn1-xCoxO mixed crystals with x up to 40%. Conversely, in the superlattice structures the interdiffusion is not strong enough to homogenize the Co content along the growth direction results in the formation of (Zn,Co)O films with spatially modulated Co concentrations. All structures deposited at 160\circC show magnetic properties specific to dilute magnetic semiconductors with localized spins S = 3/2 coupled by strong but short range antiferromagnetic interactions that lead to low temperature spin-glass freezing.
It is demonstrated that ferromagnetic-like features, visible exclusively in layers grown at 200\circC and above, are associated with an interfacial mesh of metallic Co granules residing between the substrate and the (Zn,Co)O layer. This explains why the magnitude of ferromagnetic signal is virtually independent of the film thickness as well as elucidates the origin of magnetic anisotropy. Our conclusions have been derived for layers in which the Co concentration, distribution, and aggregation have been determined by: secondary-ion mass spectroscopy, electron probe micro-analysis, high-resolution transmission electron microscopy with capabilities allowing for chemical analysis; x-ray absorption near-edge structure; extended x-ray absorption fine-structure; x-ray photoemission spectroscopy, and x-ray circular magnetic dichroism. Macroscopic properties of these layers have been investigated by superconducting quantum interference device magnetometery and microwave dielectric losses allowing to confirm the important role of metallic inclusions.
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Submitted 25 January, 2012;
originally announced January 2012.
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Properties and characterization of ALD grown dielectric oxides for MIS structures
Authors:
S. Gieraltowska,
D. Sztenkiel,
E. Guziewicz,
M. Godlewski,
G. Luka,
B. S. Witkowski,
L. Wachnicki,
E. Lusakowska,
T. Dietl,
M. Sawicki
Abstract:
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evapo…
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We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
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Submitted 27 July, 2011;
originally announced July 2011.
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Reconciling results of tunnelling experiments on (Ga,Mn)As
Authors:
Tomasz Dietl,
Dariusz Sztenkiel
Abstract:
A theoretical model is presented which allows to reconcile findings of scanning tunnelling spectroscopy for (Ga,Mn)As [Richardella et al. Science 327, 66 (2010)] with results for tunneling across (Ga,Mn)As thin layers [Ohya et al. Nature Phys. 7, 342 (2011); Phys. Rev. Lett. 104, 167204 (2010)]. According to the proposed model, supported by a self-consistent solution of the Poisson and Schroedinge…
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A theoretical model is presented which allows to reconcile findings of scanning tunnelling spectroscopy for (Ga,Mn)As [Richardella et al. Science 327, 66 (2010)] with results for tunneling across (Ga,Mn)As thin layers [Ohya et al. Nature Phys. 7, 342 (2011); Phys. Rev. Lett. 104, 167204 (2010)]. According to the proposed model, supported by a self-consistent solution of the Poisson and Schroedinger equations, a nonmonotonic behaviour of differential tunnel conductance as a function of bias is associated with the appearance of two-dimensional hole subbands rather in the GaAs:Be electrode than in the (Ga,Mn)As layer.
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Submitted 28 July, 2011; v1 submitted 16 February, 2011;
originally announced February 2011.
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Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
Authors:
A. Bonanni,
M. Sawicki,
T. Devillers,
W. Stefanowicz,
B. Faina,
Tian Li,
T. E. Winkler,
D. Sztenkiel,
A. Navarro-Quezada,
M. Rovezzi,
R. Jakiela,
A. Grois,
M. Wegscheider,
W. Jantsch,
J. Suffczynski,
F. D'Acapito,
A. Meingast,
G. Kothleitner,
T. Dietl
Abstract:
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and ele…
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The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.
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Submitted 20 June, 2011; v1 submitted 12 August, 2010;
originally announced August 2010.
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Structural and paramagnetic properties of dilute Ga1-xMnxN
Authors:
Wiktor Stefanowicz,
Dariusz Sztenkiel,
Bogdan Faina,
Andreas Grois,
Mauro Rovezzi,
Thibaut Devillers,
Francesco d'Acapito,
Andrea Navarro-Quezada,
Tian Li,
Rafal Jakiela,
Maciej Sawicki,
Tomasz Dietl,
Alberta Bonanni
Abstract:
Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites i…
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Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.
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Submitted 21 July, 2011; v1 submitted 21 December, 2009;
originally announced December 2009.
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Quantum effects in linear and non-linear transport of T-shaped ballistic junction
Authors:
J. Wrobel,
P. Zagrajek,
M. Czapkiewicz,
M. Bek,
D. Sztenkiel,
K. Fronc,
R. Hey,
K. H. Ploog,
B. R. Bulka
Abstract:
We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regim…
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We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regime the voltage of floating electrode always increases as a function of push-pull polarization. Such anomalous effect occurs for the symmetric device, provided the applied voltage is less than the Fermi energy in equilibrium.
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Submitted 10 December, 2009;
originally announced December 2009.
