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Measurements of dislocations in 4H-SiC with rocking curve imaging
Authors:
Ahmar Khaliq,
Felix Wittwer,
Niklas Pyrlik,
Giovanni Fevola,
Svenja Patjens,
Jackson Barp,
Gero Falkenberg,
Sven Hampel,
Michael Stuckelberger,
Jan Garrevoet,
Dennis Bruckner,
Peter Modregger
Abstract:
4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmi…
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4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.
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Submitted 30 August, 2024;
originally announced September 2024.
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Grain boundary strain localization in CdTe solar cell revealed by Scanning 3D X-ray diffraction microscopy
Authors:
A. Shukla,
J. Wright,
A. Henningsson,
H. Stieglitz,
E. Colegrove,
L. Besley,
C. Baur,
S De Angelis,
M. Stuckelberger,
H. F. Poulsen,
J. W. Andreasen
Abstract:
Cadmium Telluride (CdTe) solar cell technology is a promising candidate to help boost green energy production. However, impurities and structural defects are major barriers to improving the solar power conversion efficiency. Grain boundaries often act as aggregation sites for impurities, resulting in strain localization in areas of high diffusion. In this study, we demonstrate the use of scanning…
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Cadmium Telluride (CdTe) solar cell technology is a promising candidate to help boost green energy production. However, impurities and structural defects are major barriers to improving the solar power conversion efficiency. Grain boundaries often act as aggregation sites for impurities, resulting in strain localization in areas of high diffusion. In this study, we demonstrate the use of scanning 3D X-ray diffraction microscopy to non-destructively make 3D maps of the grains, their phase, orientation, and local strain within a CdTe solar cell absorber layer with a resolution of 100 nm. We quantify twin boundaries and suggest how they affect grain size and orientation distribution. Local strain analysis reveals that strain is primarily associated with high misorientation grain boundaries, whereas twin boundaries do not show high strain values. We also observe that high-strain grain boundaries form a continuous pathway connected to the CdS layer. Hence, this high-strain region is believed to be associated with the diffusion of sulfur from the CdS layer along grain boundaries. This hypothesis is supported by SEM EDS and X-ray fluorescence experiments. The method and analysis demonstrated in this work can be applied to different polycrystalline materials where the characterization of grain boundary properties is essential to understand the microstructural phenomena.
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Submitted 11 February, 2024;
originally announced February 2024.
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Detection Sensitivity Limit of Hundreds of Atoms with X-Ray Fluorescence Microscopy
Authors:
Mateus G. Masteghin,
Toussaint Gervais,
Steven K. Clowes,
David C. Cox,
Veronika Zelyk,
Ajith Pattammattel,
Yong S. Chu,
Nikola Kolev,
Taylor Z. Stock,
Neil Curson,
Paul G. Evans,
Michael Stuckelberger,
Benedict N. Murdin
Abstract:
We report X-ray fluorescence (XRF) imaging of nanoscale inclusions of impurities for quantum technology. A very bright diffraction-limited focus of the X-ray beam produces very high sensitivity and resolution. We investigated gallium (Ga) dopants in silicon (Si) produced by a focused ion beam (FIB). These dopants might provide 3/2-spin qubits or p-type electrical contacts and quantum dots. We find…
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We report X-ray fluorescence (XRF) imaging of nanoscale inclusions of impurities for quantum technology. A very bright diffraction-limited focus of the X-ray beam produces very high sensitivity and resolution. We investigated gallium (Ga) dopants in silicon (Si) produced by a focused ion beam (FIB). These dopants might provide 3/2-spin qubits or p-type electrical contacts and quantum dots. We find that the ion beam spot is somewhat larger than expected, and the technique provides a useful calibration for the resolution of FIBs. Enticingly, we demonstrate that with a single shot detection of 1 second integration time, the sensitivity of the XRF would be sufficient to find amongst background a single isolated inclusion of unknown location comprising only 3000 Ga impurities (a mass of just 350 zg) without any need for specialized nm-thickness lamellae, and down from >105 atoms in previous reports of similar work. With increased integration we were able to detect 650 impurities. The results show that planned facility upgrades might achieve single atom sensitivity with a generally applicable, non-destructive technique in the near future.
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Submitted 5 October, 2023;
originally announced October 2023.
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X-ray diffraction with micrometer spatial resolution for highly absorbing samples
Authors:
P. Chakrabarti,
A. Wildeis,
M. Hartmann,
R. Brandt,
R. Döhrmann,
G. Fevola,
C. Ossig,
M. E. Stuckelberger,
J. Garrevoet,
K. V. Falch,
V. Galbierz,
G. Falkenberg,
P. Modregger
Abstract:
X-ray diffraction with high spatial resolution is commonly used to characterize (poly-)crystalline samples with, for example, respect to local strain, residual stress, grain boundaries and texture. However, the investigation of highly absorbing samples or the simultaneous assessment of high-Z materials by X-ray fluorescence have been limited due to the utilisation of low photon energies. Here, we…
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X-ray diffraction with high spatial resolution is commonly used to characterize (poly-)crystalline samples with, for example, respect to local strain, residual stress, grain boundaries and texture. However, the investigation of highly absorbing samples or the simultaneous assessment of high-Z materials by X-ray fluorescence have been limited due to the utilisation of low photon energies. Here, we report on a goniometer-based setup implemented at the P06 beamline of PETRA III that allows for micrometer spatial resolution with a photon energy of 35 keV and above. A highly focused beam was achieved by using compound refractive lenses and high precision sample manipulation was enabled by a goniometer that allows for up to 5D scans (3 rotations & 2 translations). As experimental examples, we demonstrate the determination of local strain variations in martensitic steel samples with micrometer spatial resolution as well as the simultaneous elemental distribution for high-Z materials in a thin film solar cell. Our proposed approach allows users from the materials science community to determine micro-structural properties even in highly absorbing samples.
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Submitted 31 January, 2022;
originally announced January 2022.
