Showing 1–4 of 4 results for author: Struzzi, C

Silicene on Ag(111): an honeycomb lattice without Dirac bands

Authors: Sanjoy Kr. Mahatha, Paolo Moras, Valerio Bellini, Polina M. Sheverdyaeva, Claudia Struzzi, Luca Petaccia, Carlo Carbone

Abstract: The discovery of (4x4) silicene formation on Ag(111) raised the question on whether silicene maintains its Dirac fermion character, similar to graphene, on a supporting substrate. Previous photoemission studies indicated that the π-band forms Dirac cones near the Fermi energy, while theoretical investigations found it shifted at deeper binding energy. By means of angle-resolved photoemission spect… ▽ More The discovery of (4x4) silicene formation on Ag(111) raised the question on whether silicene maintains its Dirac fermion character, similar to graphene, on a supporting substrate. Previous photoemission studies indicated that the π-band forms Dirac cones near the Fermi energy, while theoretical investigations found it shifted at deeper binding energy. By means of angle-resolved photoemission spectroscopy and density functional theory calculations we show instead that the π-symmetry states lose their local character and the Dirac cone fades out. The formation of an interface state of free-electron-like Ag origin is found to account for spectral features that were theoretically and experimentally attributed to silicene bands of π-character. △ Less

Submitted 30 June, 2023; originally announced June 2023.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. B 89, 201416 (2014)

Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper

Authors: Chamseddine Bouhafs, Sergio Pezzini, Neeraj Mishra, Vaidotas Mišeikis, Yuran Niu, Claudia Struzzi, Alexei A. Zakharov, Stiven Forti, Camilla Coletti

Abstract: Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size.… ▽ More Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size. In this work, rhombohedral graphene with thickness up to 9 layers and areas up to ~50 micrometers square is grown via chemical vapor deposition (CVD) on suspended Cu foils and transferred onto target substrates via etch-free delamination. The domains of rhombohedral FLG are identified by Raman spectroscopy and are found to alternate with domains of Bernal-stacked FLG within the same crystal in a stripe-like configuration. A combined analysis of micro-Raman mapping, atomic force microscopy and optical microscopy indicates that the formation of rhombohedral-stacked FLG is strongly correlated to the copper substrate morphology. Cu step bunching results in bending of FLG and interlayer displacement along preferential crystallographic orientations, as determined experimentally by electron microscopy, thus inducing the stripe-like domains. The growth and transfer of rhombohedral FLG with the reported thickness and size shall facilitate the observation of predicted unconventional physics and ultimately add to its technological relevance. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 27 pages, 4 Figures, 9 Supplementary Figures

Journal ref: Carbon 177 (2021) 282-290

Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Authors: Kyung Ho Kim, Hans He, Claudia Struzzi, Alexei Zakharov, Cristina Giusca, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Samuel Lara-Avila

Abstract: We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling… ▽ More We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterizations and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate tunable ambipolar transport across the Dirac point, and n- or p-type doping depending on the Au content. △ Less

Submitted 3 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 165403 (2020)

Wafer scale growth and characterization of edge specific graphene nanoribbons

Authors: Alexei A. Zakharov, Nikolay A. Vinogradov, Johannes Aprojanz, Christoph Tegenkamp, Claudia Struzzi, Tikhomir Yakimov, Rositsa Yakimova, Valdas Jokubavicius

Abstract: One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality… ▽ More One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality GNR with excellent transport properties [2-7]. Such epitaxial graphene nanoribbons are very important in fundamental science but if GNR are supposed to be used in advanced nanoelectronics, high quality thin (<50nm) nanoribbons should be produced on a large (wafer) scale. Here we present a technique for scalable template growth of high quality GNR on Si-face of SiC(0001) and provide detailed structural information along with transport properties. We succeeded to grow GNR along both [1-100] and [11-20] crystallographic directions. The quality of the grown nanoribbons was confirmed by comprehensive characterization with high resolution STM, dark field LEEM and transport measurements. △ Less

Submitted 26 September, 2018; originally announced September 2018.