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Composition determination of quaternary GaAsPN layers from single XRD measurement of quasi-forbidden (002) reflection
Authors:
J. -M. Tilli,
H. Jussila,
K. M. Yu,
T. Huhtio,
M. Sopanen
Abstract:
GaAsPN layers with a thickness of 30nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement for full composition determination of quaternary layer material. The method is based on the peak intensity of a quasi-forbidden (002) reflection which is shown to vary with changing arsenic content for GaAsPN. The method…
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GaAsPN layers with a thickness of 30nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement for full composition determination of quaternary layer material. The method is based on the peak intensity of a quasi-forbidden (002) reflection which is shown to vary with changing arsenic content for GaAsPN. The method works for thin films with a wide range of arsenic contents and shows a clear variation in the reflection intensity as a function of changing layer composition. The obtained thicknesses and compositions of the grown layers are compared with accurate reference values obtained by Rutherford backscattering spectroscopy combined with nuclear reaction analysis measurements. Based on the comparison, the error in the XRD defined material composition becomes larger with increasing nitrogen content and layer thickness. This suggests that the dominating error source is the deteriorated crystal quality due to the nonsubstitutional incorporation of nitrogen into the crystal lattice and strain relaxation. The results reveal that the method overestimates the arsenic and nitrogen content within error margins of about 0.12 and about 0.025, respectively.
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Submitted 22 May, 2014;
originally announced May 2014.
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Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation
Authors:
Stefan Völk,
Florian J. R. Schülein,
Florian Knall,
Achim Wixforth,
Hubert. J. Krenner,
Arne Laucht,
Jonathan J. Finley,
Juha Riikonen,
Marco Mattila,
Markku Sopanen,
Harri Lipsanen,
Jun He,
Tuan A. Truong,
Hyochul Kim,
Pierre M. Petroff
Abstract:
We report on recent progress towards single photon sources based on quantum dot and quantum post nanostructures which are manipulated using surface acoustic waves. For this concept acoustic charge conveyance in a quantum well is used to spatially separate electron and hole pairs and transport these in the plane of the quantum well. When conveyed to the location of a quantum dot or quantum post the…
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We report on recent progress towards single photon sources based on quantum dot and quantum post nanostructures which are manipulated using surface acoustic waves. For this concept acoustic charge conveyance in a quantum well is used to spatially separate electron and hole pairs and transport these in the plane of the quantum well. When conveyed to the location of a quantum dot or quantum post these carriers are sequentially captured into the confined levels. Their radiative decays gives rise to the emission of a train of single photons. Three different approaches using (i) strain- induced and (ii) self-assembled quantum dots, and (iii) self-assembled quantum posts are discussed and their application potential is discussed. First devices and initial experiments towards the realization of such an acoustically driven single photon source are presented and remote acoustically triggered injection into few individual emitters is demonstrated.
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Submitted 23 November, 2010;
originally announced November 2010.
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Cascaded exciton emission of an individual strain-induced quantum dot
Authors:
F. J. R. Schülein,
A. Laucht,
J. Riikonen,
M. Mattila,
M. Sopanen,
H. Lipsanen,
J. J. Finley,
A. Wixforth,
H. J. Krenner
Abstract:
Single strain-induced quantum dots are isolated for optical experiments by selective removal of the inducing InP islands from the sample surface. Unpolarized emission of single, bi- and triexciton transitions are identified by power-dependent photoluminescence spectroscopy. Employing time-resolved experiments performed at different excitation powers we find a pronounced shift of the rise and dec…
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Single strain-induced quantum dots are isolated for optical experiments by selective removal of the inducing InP islands from the sample surface. Unpolarized emission of single, bi- and triexciton transitions are identified by power-dependent photoluminescence spectroscopy. Employing time-resolved experiments performed at different excitation powers we find a pronounced shift of the rise and decay times of these different transitions as expected from cascaded emission. Good agreement is found for a rate equation model for a three step cascade.
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Submitted 12 August, 2009;
originally announced August 2009.
