Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2
Authors:
K. Terashima,
J. Sonoyama,
T. Wakita,
M. Sunagawa,
K. Ono,
H. Kumigashira,
T. Muro,
M. Nagao,
S. Watauchi,
I. Tanaka,
H. Okazaki,
Y. Takano,
O. Miura,
Y. Mizuguchi,
H. Usui,
K. Suzuki,
K. Kuroki,
Y. Muraoka,
T. Yokoya
Abstract:
The electronic structure of nearly optimally-doped novel superconductor LaO$_{1-x}$F$_x$BiS$_2$ (${\it x}$ = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (${\it E}_{\rm F}$), which are well reproduced by first principles calculations when the spin-orbit coupling is taken i…
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The electronic structure of nearly optimally-doped novel superconductor LaO$_{1-x}$F$_x$BiS$_2$ (${\it x}$ = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (${\it E}_{\rm F}$), which are well reproduced by first principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near ${\it E}_{\rm F}$ shows a square-like distribution around the $Γ$(Z) point in addition to electronlike Fermi surface (FS) sheets around the X(R) point, indicating that FS of LaO$_{0.54}$F$_{0.46}$BiS$_2$ is in close proximity to the theoretically-predicted topological change.
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Submitted 24 December, 2014;
originally announced December 2014.
Soft x-ray photoemission study of new BiS$_{2}$-layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$
Authors:
Shinsuke Nagira,
Junki Sonoyama,
Takanori Wakita,
Masanori Sunagawa,
Yudai Izumi,
Takayuki Muro,
Hiroshi Kumigashira,
Masaharu Oshima,
Keita Deguchi,
Hiroyuki Okazaki,
Yoshihiko Takano,
Osuke Miura,
Yoshikazu Mizuguchi,
Katsuhiro Suzuki,
Hidetomo Usui,
Kazuhiko Kuroki,
Kozo Okada,
Yuji Muraoka,
Takayoshi Yokoya
Abstract:
We use core level and valence band soft x-ray photoemission spectroscopy (SXPES) to investigate electronic structure of new BiS$_{2}$ layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$. Core level spectra of doped samples show a new spectral feature at the lower binding energy side of the Bi 4${f}$ main peak, which may be explained by core-hole screening with metallic states near the Fermi level (…
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We use core level and valence band soft x-ray photoemission spectroscopy (SXPES) to investigate electronic structure of new BiS$_{2}$ layered superconductor LaO$_{1-x}$F$_{x}$BiS$_{2}$. Core level spectra of doped samples show a new spectral feature at the lower binding energy side of the Bi 4${f}$ main peak, which may be explained by core-hole screening with metallic states near the Fermi level ($E_{\rm F}$). Experimental electronic structure and its ${x}$ dependence (higher binding energy shift of the valence band as well as appearance of new states near $E_{\rm F}$ having dominant Bi 6${p}$ character) were found to be consistent with the predictions of band structure calculations in general. Noticeable deviation of the spectral shape of the states near $E_{\rm F}$ from that of calculations might give insight into the interesting physical properties. These results provide first experimental electronic structure of the new BiS$_{2}$ layered superconductors.
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Submitted 24 July, 2014; v1 submitted 20 January, 2014;
originally announced January 2014.
