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Imaging the Meissner effect and flux trapping in a hydride superconductor at megabar pressures using a nanoscale quantum sensor
Authors:
Prabudhya Bhattacharyya,
Wuhao Chen,
Xiaoli Huang,
Shubhayu Chatterjee,
Benchen Huang,
Bryce Kobrin,
Yuanqi Lyu,
Thomas J. Smart,
Maxwell Block,
Esther Wang,
Zhipan Wang,
Weijie Wu,
Satcher Hsieh,
He Ma,
Srinivas Mandyam,
Bijuan Chen,
Emily Davis,
Zachary M. Geballe,
Chong Zu,
Viktor Struzhkin,
Raymond Jeanloz,
Joel E. Moore,
Tian Cui,
Giulia Galli,
Bertrand I. Halperin
, et al. (2 additional authors not shown)
Abstract:
By directly altering microscopic interactions, pressure provides a powerful tuning knob for the exploration of condensed phases and geophysical phenomena. The megabar regime represents an exciting frontier, where recent discoveries include novel high-temperature superconductors, as well as structural and valence phase transitions. However, at such high pressures, many conventional measurement tech…
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By directly altering microscopic interactions, pressure provides a powerful tuning knob for the exploration of condensed phases and geophysical phenomena. The megabar regime represents an exciting frontier, where recent discoveries include novel high-temperature superconductors, as well as structural and valence phase transitions. However, at such high pressures, many conventional measurement techniques fail. Here, we demonstrate the ability to perform local magnetometry inside of a diamond anvil cell with sub-micron spatial resolution at megabar pressures. Our approach utilizes a shallow layer of Nitrogen-Vacancy (NV) color centers implanted directly within the anvil; crucially, we choose a crystal cut compatible with the intrinsic symmetries of the NV center to enable functionality at megabar pressures. We apply our technique to characterize a recently discovered hydride superconductor, CeH$_9$. By performing simultaneous magnetometry and electrical transport measurements, we observe the dual signatures of superconductivity: local diamagnetism characteristic of the Meissner effect and a sharp drop of the resistance to near zero. By locally mapping the Meissner effect and flux trapping, we directly image the geometry of superconducting regions, revealing significant inhomogeneities at the micron scale. Our work brings quantum sensing to the megabar frontier and enables the closed loop optimization of superhydride materials synthesis.
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Submitted 5 June, 2023;
originally announced June 2023.
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Thermal laser evaporation of elements from across the periodic table
Authors:
Thomas J. Smart,
Jochen Mannhart,
Wolfgang Braun
Abstract:
We propose and demonstrate that thermal laser evaporation can be applied to all solid, non-radioactive elements in the periodic table. By depositing thin films, we achieve growth rates exceeding 1 angstrom/s with output laser powers less than 500 W, using identical beam parameters for many different elements. The source temperature is found to vary linearly with laser power within the examined pow…
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We propose and demonstrate that thermal laser evaporation can be applied to all solid, non-radioactive elements in the periodic table. By depositing thin films, we achieve growth rates exceeding 1 angstrom/s with output laser powers less than 500 W, using identical beam parameters for many different elements. The source temperature is found to vary linearly with laser power within the examined power range. High growth rates are possible using free-standing sources for most of the elements tested, eliminating the need for crucibles.
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Submitted 23 March, 2021;
originally announced March 2021.
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Intersystem Crossing and Exciton-Defect Coupling of Spin Defects in Hexagonal Boron Nitride
Authors:
Tyler J. Smart,
Kejun Li,
Junqing Xu,
Yuan Ping
Abstract:
Despite the recognition of two-dimensional (2D) systems as emerging and scalable host materials of single photon emitters or spin qubits, uncontrolled and undetermined chemical nature of these quantum defects has been a roadblock to further development. Leveraging the design of extrinsic defects can circumvent these persistent issues and provide an ultimate solution. Here we established a complete…
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Despite the recognition of two-dimensional (2D) systems as emerging and scalable host materials of single photon emitters or spin qubits, uncontrolled and undetermined chemical nature of these quantum defects has been a roadblock to further development. Leveraging the design of extrinsic defects can circumvent these persistent issues and provide an ultimate solution. Here we established a complete theoretical framework to accurately and systematically design quantum defects in wide-bandgap 2D systems. With this approach, essential static and dynamical properties are equally considered for spin qubit discovery. In particular, many-body interactions such as defect-exciton couplings are vital for describing excited state properties of defects in ultrathin 2D systems. Meanwhile, nonradiative processes such as phonon-assisted decay and intersystem crossing rates require careful evaluation, which compete together with radiative processes. From a thorough screening of defects based on first-principles calculations, we identify promising single photon emitters such as SiVV and spin qubits such as TiVV and MoVV in hexagonal boron nitride. This work provided a complete first-principles theoretical framework for defect design in 2D materials.
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Submitted 23 March, 2021; v1 submitted 6 September, 2020;
originally announced September 2020.
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Optical Absorption Induced by Small Polaron Formation in Transition Metal Oxides -- The Case of Co$_3$O$_4$
Authors:
Tyler J. Smart,
Tuan Anh Pham,
Yuan Ping,
Tadashi Ogitsu
Abstract:
Small polarons (SPs) are known to exist in most important transition metal oxides (TMOs); however, the nature of small polaron formation remains enigmatic, and a fundamental understanding of how SPs impact the intrinsic electronic structure and optical properties of these materials is largely lacking. In this work, we employ first-principles calculations to investigate SP formation in Co$_{3}$O…
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Small polarons (SPs) are known to exist in most important transition metal oxides (TMOs); however, the nature of small polaron formation remains enigmatic, and a fundamental understanding of how SPs impact the intrinsic electronic structure and optical properties of these materials is largely lacking. In this work, we employ first-principles calculations to investigate SP formation in Co$_{3}$O$_{4}$, a highly promising material for a wide range of emerging energy applications, and we resolve the conflicting findings that have been reported on the electronic structure of the system. We confirm that the intrinsic band gap of Co$_{3}$O$_{4}$ is 1.6 eV, and we show that the formation of hole small polarons significantly influences the optical absorption spectra, leading to a 0.8 eV transition that is often misinterpreted as the band edge that defines the fundamental gap. In addition, we discuss how uniaxial strain can be utilized to probe the Jahn-Teller distortion of SP states and in turn, effect their optical transitions. Beyond Co$_{3}$O$_{4}$, our study suggests a general roadmap for establishing a first-principles computational approach that can simultaneously achieve an accurate description of SP states, electronic band structure and optical transitions of polaronic magnetic oxides.
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Submitted 18 September, 2019;
originally announced September 2019.
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Imaging stress and magnetism at high pressures using a nanoscale quantum sensor
Authors:
S. Hsieh,
P. Bhattacharyya,
C. Zu,
T. Mittiga,
T. J. Smart,
F. Machado,
B. Kobrin,
T. O. Höhn,
N. Z. Rui,
M. Kamrani,
S. Chatterjee,
S. Choi,
M. Zaletel,
V. V. Struzhkin,
J. E. Moore,
V. I. Levitas,
R. Jeanloz,
N. Y. Yao
Abstract:
Pressure alters the physical, chemical and electronic properties of matter. The development of the diamond anvil cell (DAC) enables tabletop experiments to investigate a diverse landscape of high-pressure phenomena ranging from the properties of planetary interiors to transitions between quantum mechanical phases. In this work, we introduce and utilize a novel nanoscale sensing platform, which int…
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Pressure alters the physical, chemical and electronic properties of matter. The development of the diamond anvil cell (DAC) enables tabletop experiments to investigate a diverse landscape of high-pressure phenomena ranging from the properties of planetary interiors to transitions between quantum mechanical phases. In this work, we introduce and utilize a novel nanoscale sensing platform, which integrates nitrogen-vacancy (NV) color centers directly into the culet (tip) of diamond anvils. We demonstrate the versatility of this platform by performing diffraction-limited imaging (~600 nm) of both stress fields and magnetism, up to pressures ~30 GPa and for temperatures ranging from 25-340 K. For the former, we quantify all six (normal and shear) stress components with accuracy $<0.01$ GPa, offering unique new capabilities for characterizing the strength and effective viscosity of solids and fluids under pressure. For the latter, we demonstrate vector magnetic field imaging with dipole accuracy $<10^{-11}$ emu, enabling us to measure the pressure-driven $α\leftrightarrowε$ phase transition in iron as well as the complex pressure-temperature phase diagram of gadolinium. In addition to DC vector magnetometry, we highlight a complementary NV-sensing modality using T1 noise spectroscopy; crucially, this demonstrates our ability to characterize phase transitions even in the absence of static magnetic signatures. By integrating an atomic-scale sensor directly into DACs, our platform enables the in situ imaging of elastic, electric and magnetic phenomena at high pressures.
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Submitted 20 December, 2018;
originally announced December 2018.
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Fundamental Principles for Calculating Charged Defect Ionization Energies in Ultrathin Two-Dimensional Materials
Authors:
Tyler J. Smart,
Feng Wu,
Marco Govoni,
Yuan Ping
Abstract:
Defects in 2D materials are becoming prominent candidates for quantum emitters and scalable optoelectronic applications. However, several physical properties that characterize their behavior, such as charged defect ionization energies, are difficult to simulate with conventional first-principles methods, mainly because of the weak and anisotropic dielectric screening caused by the reduced dimensio…
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Defects in 2D materials are becoming prominent candidates for quantum emitters and scalable optoelectronic applications. However, several physical properties that characterize their behavior, such as charged defect ionization energies, are difficult to simulate with conventional first-principles methods, mainly because of the weak and anisotropic dielectric screening caused by the reduced dimensionality. We establish fundamental principles for accurate and efficient calculations of charged defect ionization energies and electronic structure in ultrathin 2D materials. We propose to use the vacuum level as the reference for defect charge transition levels (CTLs) because it gives robust results insensitive to the level of theory, unlike commonly used band edge positions. Furthermore, we determine the fraction of Fock exchange in hybrid functionals for accurate band gaps and band edge positions of 2D materials by enforcing the generalized Koopmans' condition of localized defect states. We found the obtained fractions of Fock exchange vary significantly from 0.2 for bulk $h$-BN to 0.4 for monolayer $h$-BN, whose band gaps are also in good agreement with experimental results and calculated GW results. The combination of these methods allows for reliable and efficient prediction of defect ionization energies (difference between CTLs and band edge positions). We motivate and generalize these findings with several examples including different defects in monolayer to few-layer hexagonal boron nitride ($h$-BN), monolayer MoS$_2$ and graphane. Finally, we show that increasing the number of layers of $h$-BN systematically lowers defect ionization energies, mainly through CTLs shifting towards vacuum, with conduction band minima kept almost unchanged.
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Submitted 30 November, 2018; v1 submitted 9 August, 2018;
originally announced August 2018.
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Effect of Defects on the Small Polaron Formation and Transport Properties of Hematite from First-Principles Calculations
Authors:
Tyler J. Smart,
Yuan Ping
Abstract:
Hematite ($α$-Fe$_2$O$_3$) is a promising candidate as photoanode materials for solar-to-fuel conversion due to its favorable band gap for visible light absorption, its stability in an aqueous environment and its relatively low cost in comparison to other prospective materials. However, the small polaron transport nature in $α$-Fe$_2$O$_3$ results in low carrier mobility and conductivity, signific…
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Hematite ($α$-Fe$_2$O$_3$) is a promising candidate as photoanode materials for solar-to-fuel conversion due to its favorable band gap for visible light absorption, its stability in an aqueous environment and its relatively low cost in comparison to other prospective materials. However, the small polaron transport nature in $α$-Fe$_2$O$_3$ results in low carrier mobility and conductivity, significantly lowering its efficiency from the theoretical limit. Experimentally, it has been found that the incorporation of oxygen vacancies and other dopants, such as Sn, into the material appreciably enhances its photo-to-current efficiency. Yet, no quantitative explanation has been provided to understand the role of oxygen vacancy or Sn-doping in hematite. We employed density functional theory to probe the small polaron formation in oxygen deficient hematite, N-doped as well as Sn-doped hematite. We computed the charged defect formation energies, the small polaron formation energy and hopping activation energies to understand the effect of defects on carrier concentration and mobility. This work provides us with a fundamental understanding regarding the role of defects on small polaron formation and transport properties in hematite, offering key insights into the design of new dopants to further improve the efficiency of transition metal oxides for solar-to-fuel conversion.
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Submitted 29 March, 2018;
originally announced March 2018.
