Showing 1–50 of 117 results for author: Shur, M

Expected Density of Random Minimizers

Authors: Shay Golan, Arseny M. Shur

Abstract: Minimizer schemes, or just minimizers, are a very important computational primitive in sampling and sketching biological strings. Assuming a fixed alphabet of size $σ$, a minimizer is defined by two integers $k,w\ge2$ and a total order $ρ$ on strings of length $k$ (also called $k$-mers). A string is processed by a sliding window algorithm that chooses, in each window of length $w+k-1$, its minimal… ▽ More Minimizer schemes, or just minimizers, are a very important computational primitive in sampling and sketching biological strings. Assuming a fixed alphabet of size $σ$, a minimizer is defined by two integers $k,w\ge2$ and a total order $ρ$ on strings of length $k$ (also called $k$-mers). A string is processed by a sliding window algorithm that chooses, in each window of length $w+k-1$, its minimal $k$-mer with respect to $ρ$. A key characteristic of the minimizer is the expected density of chosen $k$-mers among all $k$-mers in a random infinite $σ$-ary string. Random minimizers, in which the order $ρ$ is chosen uniformly at random, are often used in applications. However, little is known about their expected density $\mathcal{DR}_σ(k,w)$ besides the fact that it is close to $\frac{2}{w+1}$ unless $w\gg k$. We first show that $\mathcal{DR}_σ(k,w)$ can be computed in $O(kσ^{k+w})$ time. Then we attend to the case $w\le k$ and present a formula that allows one to compute $\mathcal{DR}_σ(k,w)$ in just $O(w^2)$ time. Further, we describe the behaviour of $\mathcal{DR}_σ(k,w)$ in this case, establishing the connection between $\mathcal{DR}_σ(k,w)$, $\mathcal{DR}_σ(k+1,w)$, and $\mathcal{DR}_σ(k,w+1)$. In particular, we show that $\mathcal{DR}_σ(k,w)<\frac{2}{w+1}$ (by a tiny margin) unless $w$ is small. We conclude with some partial results and conjectures for the case $w>k$. △ Less

Submitted 22 October, 2024; originally announced October 2024.

Detection of terahertz radiation using topological graphene micro-nanoribbon structures with transverse plasmonic resonant cavities

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, M. S. Shur

Abstract: The lateral interdigital array of the graphene microribbons (GMRs) on the h-BN substrate connected by narrow graphene nanoribbon (GNR) bridges serves as an efficient detector of terahertz (THz) radiation. The detection is enabled by the nonlinear GNR elements providing the rectification of the THz signals. The excitation of plasmonic waves along the GMRs (transverse plasmonic oscillations) by impi… ▽ More The lateral interdigital array of the graphene microribbons (GMRs) on the h-BN substrate connected by narrow graphene nanoribbon (GNR) bridges serves as an efficient detector of terahertz (THz) radiation. The detection is enabled by the nonlinear GNR elements providing the rectification of the THz signals. The excitation of plasmonic waves along the GMRs (transverse plasmonic oscillations) by impinging THz radiation can lead to a strong resonant amplification of the rectified signal current and substantial enhancement of the detector response. The GMR arrays with the GNR bridges s can be formed by the perforation of uniform graphene layers △ Less

Submitted 23 September, 2024; originally announced September 2024.

Comments: 9 pages, 6 figures

Compact SPICE model for TeraFET resonant detectors

Authors: Xueqing Liu, Yuhui Zhang, Trond Ytterdal, Michael Shur

Abstract: This paper presents an improved compact model for TeraFETs employing a nonlinear transmission line approach to describe the non-uniform carrier density oscillations and electron inertia effects in the TeraFET channels. By calculating the equivalent components for each segment of the channel: conductance, capacitance, and inductance, based on the voltages at the segment's nodes, our model accommoda… ▽ More This paper presents an improved compact model for TeraFETs employing a nonlinear transmission line approach to describe the non-uniform carrier density oscillations and electron inertia effects in the TeraFET channels. By calculating the equivalent components for each segment of the channel: conductance, capacitance, and inductance, based on the voltages at the segment's nodes, our model accommodates non-uniform variations along the channel. We validate the efficacy of this approach by comparing terahertz (THz) response simulations with experimental data and MOSA1, EKV TeraFET SPICE models, analytical theories, and Multiphysics simulations. △ Less

Submitted 27 July, 2024; originally announced July 2024.

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ul… ▽ More We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency. △ Less

Submitted 10 March, 2024; originally announced March 2024.

Comments: 9 pages, 11 figures

Terahertz plasmonic resonances in coplanar graphene nanoribbon structures

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, M. S. Shur

Abstract: We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic… ▽ More We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic oscillations in the CNR structures with long GNRs. The GNR structures under consideration can be used in different THz devices as the resonant structures incorporated in THz detectors, THz sources using resonant-tunneling diodes, photomixers, and surface acoustic wave sensors. △ Less

Submitted 9 March, 2024; v1 submitted 6 February, 2024; originally announced February 2024.

Comments: 8 pages, 4 figures

Journal ref: J. Appl. Phys. 135, 114503 (2024)

Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor

Authors: G. Simin, M. Shur

Abstract: Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier densities. In contrast to the conventional designs, this Quantum Channel (QC) confinement is controlled by epilayer design and the polarization field… ▽ More Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier densities. In contrast to the conventional designs, this Quantum Channel (QC) confinement is controlled by epilayer design and the polarization field and not by the electron sheet density. As a result, the breakdown field at low sheet carrier densities increases by approximately 36% or even more because the quantization leads to an effective increase in the energy gap. In addition, better confinement increases the electron mobility at low sheet carrier densities by approximately 50%. Another advantage is the possibility of increasing the aluminum molar fraction in the barrier layer because a very thin layer prevents material relaxation and the development of dislocation arrays. This makes the QC especially suitable for high-voltage, high-frequency, high-temperature, and radiation-hard applications. △ Less

Submitted 18 October, 2023; originally announced November 2023.

Comments: 7 pages 6 figures

Power-free Complementary Binary Morphisms

Authors: Jeffrey Shallit, Arseny M. Shur, Stefan Zorcic

Abstract: We revisit the topic of power-free morphisms, focusing on the properties of the class of complementary morphisms. Such morphisms are defined over a $2$-letter alphabet, and map the letters 0 and 1 to complementary words. We prove that every prefix of the famous Thue-Morse word $\mathbf{t}$ gives a complementary morphism that is $3^+$-free and hence $α$-free for every real number $α>3$. We also des… ▽ More We revisit the topic of power-free morphisms, focusing on the properties of the class of complementary morphisms. Such morphisms are defined over a $2$-letter alphabet, and map the letters 0 and 1 to complementary words. We prove that every prefix of the famous Thue-Morse word $\mathbf{t}$ gives a complementary morphism that is $3^+$-free and hence $α$-free for every real number $α>3$. We also describe, using a 4-state binary finite automaton, the lengths of all prefixes of $\mathbf{t}$ that give cubefree complementary morphisms. Next, we show that $3$-free (cubefree) complementary morphisms of length $k$ exist for all $k\not\in \{3,6\}$. Moreover, if $k$ is not of the form $3\cdot2^n$, then the images of letters can be chosen to be factors of $\mathbf{t}$. Finally, we observe that each cubefree complementary morphism is also $α$-free for some $α<3$; in contrast, no binary morphism that maps each letter to a word of length 3 (resp., a word of length 6) is $α$-free for any $α<3$. In addition to more traditional techniques of combinatorics on words, we also rely on the Walnut theorem-prover. Its use and limitations are discussed. △ Less

Submitted 8 December, 2023; v1 submitted 23 October, 2023; originally announced October 2023.

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Authors: V. Ryzhii, M. S. Shur, M. Ryzhii, V. Mitin, C. Tang, T. Otsuji

Abstract: We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector… ▽ More We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector response on the incoming THz signal phase shift and the THz radiation angle of incidence. △ Less

Submitted 15 October, 2023; originally announced October 2023.

Comments: 5 pages, 4 figures

Distance Labeling for Families of Cycles

Authors: Arseny M. Shur, Mikhail Rubinchik

Abstract: For an arbitrary finite family of graphs, the distance labeling problem asks to assign labels to all nodes of every graph in the family in a way that allows one to recover the distance between any two nodes of any graph from their labels. The main goal is to minimize the number of unique labels used. We study this problem for the families $\mathcal{C}_n$ consisting of cycles of all lengths between… ▽ More For an arbitrary finite family of graphs, the distance labeling problem asks to assign labels to all nodes of every graph in the family in a way that allows one to recover the distance between any two nodes of any graph from their labels. The main goal is to minimize the number of unique labels used. We study this problem for the families $\mathcal{C}_n$ consisting of cycles of all lengths between 3 and $n$. We observe that the exact solution for directed cycles is straightforward and focus on the undirected case. We design a labeling scheme requiring $\frac{n\sqrt{n}}{\sqrt{6}}+O(n)$ labels, which is almost twice less than is required by the earlier known scheme. Using the computer search, we find an optimal labeling for each $n\le 17$, showing that our scheme gives the results that are very close to the optimum. △ Less

Submitted 29 August, 2023; originally announced August 2023.

MSC Class: 68R10

Micromechanical field-effect transistor terahertz detectors with optical interferometric readout

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, S. G. Kalenkov, V. Mitin, M. S. Shur

Abstract: We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optic… ▽ More We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Comments: 8 pages, 3 figures

Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances

Authors: M. Ryzhii, V. Ryzhii, M. S. Shur, V. Mitin, C. Tang, T. Otsuji

Abstract: We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short sect… ▽ More We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short section of the GC is sandwiched between the b-P gate BL and the h-BN bottom layer. The b-P gate BL serves as the window for the electron thermionic current from the GC. The electron mobility in the GC section encapsulated in h-BN can be fairly large. This might enable a strong resonant plasmonic response of the GC-FET detectors despite relatively lower electron mobility in the GC section covered by the b-P window BL. The narrow b-P window diminishes the Peltier cooling and enhances the detector performance. The proposed device structure and its operation principle promote elevated values of the room-temperature GC-FET THz detector responsivity and other characteristics, especially at the plasmonic resonances. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Comments: 9 pages, 8 figures

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to a… ▽ More We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As$_x$P$_{1-x}$ energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As$_x$P$_{1-x}$ atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of $10^3$~A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures. △ Less

Submitted 23 April, 2023; originally announced April 2023.

Comments: 13 pages, 5 figures

Report number: 2304.11635

Journal ref: Sci Rep 13, 9665 (2023)

Plasma Instability and Amplified Mode Switching Effect in THz Field Effect Transistors with Grating Gate

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: We developed a theory of collective plasma oscillations in a dc current-biased field effect transistor with interdigitated dual grating gate and demonstrated a new mechanism of electron plasma instability in this structure. The instability in the plasmonic crystal formed in the transistor channel develops due to conversion of the kinetic energy carried by the drifting plasmons into electromagnetic… ▽ More We developed a theory of collective plasma oscillations in a dc current-biased field effect transistor with interdigitated dual grating gate and demonstrated a new mechanism of electron plasma instability in this structure. The instability in the plasmonic crystal formed in the transistor channel develops due to conversion of the kinetic energy carried by the drifting plasmons into electromagnetic energy. The conversion happens at the opposite sides of the gate fingers due to the asymmetry produced by the current flow and occurs through the gate finger fringing capacitances. The key feature of the proposed instability mechanism is the behavior of the plasma frequency peak and its width as functions of the dc current bias. At a certain critical value of the current, the plasma resonant peak with small instability increment experiencing redshift with increasing current changes to the blue shifting peak with large instability increment. This amplified mode switching (AMS) effect has been recently observed in graphene-interdigitated structures (S. Boubanga-Tombet et al., Phys. Rev. X 10, 031004 (2020)). The obtained theoretical results are in very good qualitative agreement with these experiments and can be used in future designs of the compact sources of THz EM radiation. △ Less

Submitted 25 March, 2023; originally announced March 2023.

Comments: 15 pages, 6 figures

Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to… ▽ More We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to the excitation of plasmonic oscillations in the GC by the THz signals, the GC-FET detector response can be pronouncedly resonant, leading to elevated values of the detector responsivity. The lateral thermal conductivity of the 2DEG can markedly affect the GC-FET responsivity, in particular, its spectral characteristics. This effect should be considered for the optimization of the GC-FET detectors. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 9 pages, 3 figures

Report number: arXiv:2303.08492

Journal ref: Phys. Rev. Applied 19, 064033 (2023)

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emissi… ▽ More We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large. △ Less

Submitted 24 April, 2023; v1 submitted 15 March, 2023; originally announced March 2023.

Comments: 8 pages, 4 figures

Report number: 2303.08488

Journal ref: J. Appl. Phys. 133, 174501 (2023)

Resonant THz detection by periodic multi-gate plasmonic FETs

Authors: Yuhui Zhang, Michael S. Shur

Abstract: We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with distinct carrier concentrations and velocities, giving rise to harmonic behaviors. The resulting frequency spectrum of DC voltage response is composed of enhanced and… ▽ More We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with distinct carrier concentrations and velocities, giving rise to harmonic behaviors. The resulting frequency spectrum of DC voltage response is composed of enhanced and suppressed regions. In the enhanced region, the amplitude of response voltage can be enlarged up to 100% compared to that in a uniform channel device. The distribution pattern of those regions is directly related to the number of gate sections (Ns). A mapping of response amplitude in an Ns-frequency scale is created, which helps distinguish enhanced/suppressed regions and locate optimal operating parameters. △ Less

Submitted 19 February, 2023; originally announced February 2023.

Comments: 6 pages, 6 figures

THz detection and amplification using plasmonic Field Effect Transistors driven by DC drain currents

Authors: Yuhui Zhang, Michael Shur

Abstract: We report on the numerical and theoretical results of sub-THz and THz detection by a current-driven InGaAs/GaAs plasmonic Field-Effect Transistor (TeraFET). New equations are developed to account for the channel length dependence of the drain voltage and saturation current. Numerical simulation results demonstrate that the effect of drain bias current on the source-to-drain response voltage (dU) v… ▽ More We report on the numerical and theoretical results of sub-THz and THz detection by a current-driven InGaAs/GaAs plasmonic Field-Effect Transistor (TeraFET). New equations are developed to account for the channel length dependence of the drain voltage and saturation current. Numerical simulation results demonstrate that the effect of drain bias current on the source-to-drain response voltage (dU) varies with the device channel length. In a long-channel TeraFET where plasmonic oscillations cannot reach the drain, dU is always positive and rises rapidly with increasing drain current. For a short device in which plasmonic oscillations reach the drain, the current-induced nonuniform electric field leads to a negative response, agreeing with previous observations. At negative dU, the amplitude of the small-signal voltage at the drain side becomes larger than that at the source side. Thus, the device effectively serves as a THz amplifier in this condition. Under the resonant mode, the negative response can be further amplified near the resonant peaks. A new expression of dU is proposed to account for this resonant effect. Based on those expressions, a current-driven TeraFET spectrometer is proposed. The ease of implementation and simplified calibration procedures make it competitive or superior compared with other TeraFET-based spectrometers. △ Less

Submitted 27 September, 2022; originally announced September 2022.

Comments: 23 pages, 11 figures, 1 table

Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: The Zener-Klein (ZK) interband tunneling in graphene layers (GLs) with the lateral n-i-n and p-i-n junctions results in the nonlinear I-V characteristics that can be used for the rectification and detection of the terahertz (THz) signals. The transit time delay of the tunneling electrons and holes in the depletion regions leads to the phase shift between the THz current and THz voltage causing the… ▽ More The Zener-Klein (ZK) interband tunneling in graphene layers (GLs) with the lateral n-i-n and p-i-n junctions results in the nonlinear I-V characteristics that can be used for the rectification and detection of the terahertz (THz) signals. The transit time delay of the tunneling electrons and holes in the depletion regions leads to the phase shift between the THz current and THz voltage causing the negative dynamic conductance in a certain frequency range and resulting in the so-called transit-time (TT) instability. The combination of the ZK tunneling and the TT negative dynamic conductance enables resonant THz detection and the amplification and generation of THz radiation. We propose and evaluate the THz devices based on periodic cascade GL p-i-n structures exhibiting the TT resonances (GPIN-TTDs). Such structures can serve as THz amplifiers and, being placed in a Fabri-Perot cavity, or coupled to a THz antenna or using a ring oscillator connection, as THz radiation sources. △ Less

Submitted 29 August, 2022; originally announced August 2022.

Comments: 13 pages, 9 figures

Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors exhibiting nonlinear $I-V$ characteristics due to the Zener-Klein tunneling. This region enables the THz signal rectification, which provides their detection. The gated… ▽ More We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors exhibiting nonlinear $I-V$ characteristics due to the Zener-Klein tunneling. This region enables the THz signal rectification, which provides their detection. The gated regions serve as the electron and hole reservoirs and the THz resonant plasma cavities. The resonant excitation of the electron and hole plasmonic oscillations results in a substantial increase in the THz detector responsivity at the signal frequency close to the plasma frequency and its harmonics. Due to the specifics of the i-region AC conductance frequency dependence, associated with the transit-time effects, the GPIN-FET response at the frequency, corresponding to the excitation of a higher plasmonic mode, can be stronger than for the fundamental mode. The GPIN-FETs can exhibit fairly high responsivity at room temperatures. Lowering of the latter can result in its further enhancement due to weakening of the carrier momentum relaxation. △ Less

Submitted 10 September, 2022; v1 submitted 21 June, 2022; originally announced June 2022.

Comments: 13 pages, 5 figures

Report number: 2206.1021

Journal ref: Phys.Rev.Applied 18, 034022 (2022)

On minimal critical exponent of balanced sequences

Authors: Lubomíra Dvořáková, Daniela Opočenská, Edita Pelantová, Arseny M. Shur

Abstract: We study the threshold between avoidable and unavoidable repetitions in infinite balanced sequences over finite alphabets. The conjecture stated by Rampersad, Shallit and Vandomme says that the minimal critical exponent of balanced sequences over the alphabet of size $d \geq 5$ equals $\frac{d-2}{d-3}$. This conjecture is known to hold for $d\in \{5, 6, 7,8,9,10\}$. We refute this conjecture by sh… ▽ More We study the threshold between avoidable and unavoidable repetitions in infinite balanced sequences over finite alphabets. The conjecture stated by Rampersad, Shallit and Vandomme says that the minimal critical exponent of balanced sequences over the alphabet of size $d \geq 5$ equals $\frac{d-2}{d-3}$. This conjecture is known to hold for $d\in \{5, 6, 7,8,9,10\}$. We refute this conjecture by showing that the picture is different for bigger alphabets. We prove that critical exponents of balanced sequences over an alphabet of size $d\geq 11$ are lower bounded by $\frac{d-1}{d-2}$ and this bound is attained for all even numbers $d\geq 12$. According to this result, we conjecture that the least critical exponent of a balanced sequence over $d$ letters is $\frac{d-1}{d-2}$ for all $d\geq 11$. △ Less

Submitted 6 December, 2021; originally announced December 2021.

Comments: 20 pages; 2 figures

MSC Class: 68R15

Ballistic injection terahertz plasma instability in graphene n+-i-n-n+ field-effect transistors and lateral diodes

Authors: V. Ryzhii, M. Ryzhii, A. Satou, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the… ▽ More We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters. △ Less

Submitted 20 October, 2021; originally announced October 2021.

Comments: 8 pages, 4 figures

Report number: 2110.10479

Journal ref: Phis. Stat. Sol. A 2021, 2100694

Giant Inverse Faraday Effect in Plasmonic Crystal Ring

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: Circularly polarized electromagnetic wave impinging on a conducting ring generates a circulating DC plasmonic current resulting in an Inverse Faraday Effect in nanorings. We show that a large ring with periodically modulated width on a nanoscale, smaller or comparable with the plasmonic mean free path, supports plasmon energy bands. When a circularly polarized radiation impinges on such a plasmoni… ▽ More Circularly polarized electromagnetic wave impinging on a conducting ring generates a circulating DC plasmonic current resulting in an Inverse Faraday Effect in nanorings. We show that a large ring with periodically modulated width on a nanoscale, smaller or comparable with the plasmonic mean free path, supports plasmon energy bands. When a circularly polarized radiation impinges on such a plasmonic ring, it produces resonant DC plasmonic current on a macro scale resulting in a Giant Inverse Faraday Effect. The metamaterials comprised of the concentric variable width rings (plasmonic disks) and stacked plasmonic disks (plasmonic solenoids) amplify the generated constant magnetic field by orders of magnitude. △ Less

Submitted 28 September, 2021; originally announced September 2021.

Comments: 14 pages, 3 figures

Abelian Repetition Threshold Revisited

Authors: Elena A. Petrova, Arseny M. Shur

Abstract: Abelian repetition threshold ART(k) is the number separating fractional Abelian powers which are avoidable and unavoidable over the k-letter alphabet. The exact values of ART(k) are unknown; the lower bounds were proved in [A.V. Samsonov, A.M. Shur. On Abelian repetition threshold. RAIRO ITA, 2012] and conjectured to be tight. We present a method of study of Abelian power-free languages using rand… ▽ More Abelian repetition threshold ART(k) is the number separating fractional Abelian powers which are avoidable and unavoidable over the k-letter alphabet. The exact values of ART(k) are unknown; the lower bounds were proved in [A.V. Samsonov, A.M. Shur. On Abelian repetition threshold. RAIRO ITA, 2012] and conjectured to be tight. We present a method of study of Abelian power-free languages using random walks in prefix trees and some experimental results obtained by this method. On the base of these results, we conjecture that the lower bounds for ART(k) by Samsonov and Shur are not tight for all k except for k=5 and prove this conjecture for k=6,7,8,9,10. Namely, we show that ART(k) > (k-2)/(k-3) in all these cases. △ Less

Submitted 20 September, 2021; originally announced September 2021.

Comments: 20 pages, 5 figures

MSC Class: 68R15

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Authors: V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, V. Mitin, M. S. Shur

Abstract: We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions… ▽ More We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the plasma instability and the self-excitation of the plasma oscillations in the terahertz (THz) frequency range. This effect might be used for the generation of the THz radiation. △ Less

Submitted 2 September, 2021; originally announced September 2021.

Comments: 9 pages, 7 figures

Report number: 2109.0073

Journal ref: Phys.Rev.Applied 16, 064054 (2021)

TeraFET terahertz detectors with spatially non-uniform gate capacitances

Authors: Yuhui Zhang, Michael S. Shur

Abstract: A non-uniform capacitance profile in the channel of a THz field-effect transistor (TeraFET) could significantly improve the THz detection performance. The analytical solutions and simulations of the hydrodynamic equations for the exponentially varying capacitance versus distance showed ~10% increase in the responsivity for the 130 nm Si TeraFETs in good agreement with numerical simulations. Using… ▽ More A non-uniform capacitance profile in the channel of a THz field-effect transistor (TeraFET) could significantly improve the THz detection performance. The analytical solutions and simulations of the hydrodynamic equations for the exponentially varying capacitance versus distance showed ~10% increase in the responsivity for the 130 nm Si TeraFETs in good agreement with numerical simulations. Using the numerical solutions of the hydrodynamic equations, we compared three different Cg configurations (exponential, linear and sawtooth). The simulations showed that the sawtooth configuration provides the largest response tunability. We also compared the effects of the non-uniform capacitance profiles for Si, III-V, and p-diamond TeraFETs. The results confirmed a great potential of p-diamond for THz applications. Varying the threshold voltage across the channel could have an effect similar to that of varying the gate-to-channel capacitance. The physics behind the demonstrated improvement in THz detection performance is related to breaking the channel symmetry by device geometry of composition asymmetry. △ Less

Submitted 29 August, 2021; originally announced August 2021.

Comments: 8 pages, 5 figures

Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injec… ▽ More We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injected current. The plasma excitations arise when the drag effect is sufficiently strong. The drag efficiency and the plasma frequency are determined by the quasi-equilibrium electrons Fermi energy (i.e., by their density). The conditions of the terahertz plasma oscillation self-excitation can be realized in the G-FETs with realistic structural parameters at room temperature enabling the potential G-FET-based radiation sources for the THz applications. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Comments: 5 pages, 3 figures

Report number: 2106.15204

Journal ref: Appl. Phys.Lett, 119,093501 (2021)

Branching Frequency and Markov Entropy of Repetition-Free Languages

Authors: Elena A. Petrova, Arseny M. Shur

Abstract: We define a new quantitative measure for an arbitrary factorial language: the entropy of a random walk in the prefix tree associated with the language; we call it Markov entropy. We relate Markov entropy to the growth rate of the language and to the parameters of branching of its prefix tree. We show how to compute Markov entropy for a regular language. Finally, we develop a framework for experime… ▽ More We define a new quantitative measure for an arbitrary factorial language: the entropy of a random walk in the prefix tree associated with the language; we call it Markov entropy. We relate Markov entropy to the growth rate of the language and to the parameters of branching of its prefix tree. We show how to compute Markov entropy for a regular language. Finally, we develop a framework for experimental study of Markov entropy by modelling random walks and present the results of experiments with power-free and Abelian-power-free languages. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Comments: 16 pages, 2 figures. Submitted to DLT 2021

MSC Class: 68Q45; 05C81

S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current… ▽ More We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current-voltage characteristics (IVs). The resulting negative differential conductivity enables the hysteresis effects and current filamentation that can be used for the implementation of voltage switching devices. Due to a strong nonlinearity of the IVs, the G-FETs can be used for an effective frequency multiplication and detection of terahertz radiation. △ Less

Submitted 13 July, 2021; v1 submitted 9 April, 2021; originally announced April 2021.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. Applied 16, 014001 (2021)

Modulation characteristics of uncooled graphene photodetectors

Authors: V. Ryzhii, M. Ryzhii, T. Otsuji, V. Leiman, V. Mitin, M. S. Shur

Abstract: We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GL-photoresistor and the PG… ▽ More We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GL-photoresistor and the PGL-based barrier photodiodes) are compared. Their characteristics are also compared with the GL reverse-biased photodiodes. The obtained results allow to evaluate the ultimate modulation frequencies of these photodetectors and can be used for their optimization. △ Less

Submitted 1 February, 2021; originally announced February 2021.

Comments: 10 pages, 3 figures

Report number: 2102.01299

Journal ref: J. Appl. Phys. 129, 214503 (2021)

Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene

Authors: Yuhui Zhang, Michael S. Shur

Abstract: The terahertz detection performance and operating regimes of graphene plasmonic field-effect transistors (FETs) were investigated by a hydrodynamic model. Continuous wave detection simulations showed that the graphene response sensitivity is similar to that of other materials including Si, InGaAs, GaN, and diamond-based FETs. However, the pulse detection results indicated a very short response tim… ▽ More The terahertz detection performance and operating regimes of graphene plasmonic field-effect transistors (FETs) were investigated by a hydrodynamic model. Continuous wave detection simulations showed that the graphene response sensitivity is similar to that of other materials including Si, InGaAs, GaN, and diamond-based FETs. However, the pulse detection results indicated a very short response time, which favors the rapid/high-sensitively detection. The analysis on the mobility dependence of the response time revealed the same detection regimes as the traditional semiconductor materials, i.e. the non-resonant (collision dominated) regime, the resonant ballistic regime, and the viscous regime. When the kinematic viscosity (ν) is above a certain critical viscosity value, νNR, the plasmonic FETs always operates in the viscous non-resonant regime regardless of channel length (L). In this regime, the response time rises monotonically with the increase of L. When ν < νNR, the plasmonic resonance can be reached in a certain range of L (i.e. the resonant window). Within this window, the carrier transport is ballistic. For a sufficiently short channel, the graphene devices would always operate in the non-resonant regime regardless of the field-effect mobility, corresponding to another viscous regime. The above work mapped the operating regimes of graphene plasmonic FETs, and demonstrated the significance of the viscous effects for the graphene plasmonic detection. These results could be used for the extraction of the temperature dependences of viscosity in graphene. △ Less

Submitted 13 February, 2021; v1 submitted 21 December, 2020; originally announced December 2020.

Comments: 15 pages, 11 figures

Journal ref: Journal of Applied Physics 129, 053102 (2021)

Heat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene~bilayers

Authors: V. Ryzhii, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur

Abstract: We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier hea… ▽ More We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} \simeq 2.37$ at $T \lesssim 300$~K to $c_{GBL} \simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical two-dimensional carriers with $c = 1$. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices. △ Less

Submitted 7 November, 2020; originally announced November 2020.

Comments: 6 pages, one figure

Journal ref: Phys. Rev. B 103, 245414 (2021)

Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride

Authors: V Ryzhii, T Otsuji, M Ryzhii, V Leiman, P P Maltsev, V E Karasik, V Mitin, M S Shur

Abstract: We develop the device model for the proposed injection (electrically) driven thermal light emitters (IDLEs) based on the vertical Hexagonal Boron Nitride Layer/Graphene Layer/ Hexagonal Boron Nitride Layer (hBNL/GL/hBNL) heterostructures and analyze their dynamic response. The operation of the IDLEs is associated with the light emission of the hot two-dimensional electron-hole plasma (2DEHP) gener… ▽ More We develop the device model for the proposed injection (electrically) driven thermal light emitters (IDLEs) based on the vertical Hexagonal Boron Nitride Layer/Graphene Layer/ Hexagonal Boron Nitride Layer (hBNL/GL/hBNL) heterostructures and analyze their dynamic response. The operation of the IDLEs is associated with the light emission of the hot two-dimensional electron-hole plasma (2DEHP) generated in the GL by both the lateral injection from the side contacts and the vertical injection through the hBNL (combined injection) heating the 2DEHP. The temporal variation of the injection current results in the variation of the carrier effective temperature and their density in the GL leading to the modulation of the output light. We determine the mechanisms limiting the IDLE efficiency and the maximum light modulation frequency. A large difference between the carrier and lattice temperatures the IDLEs with an effective heat removal enables a fairly large modulation depth at the modulation frequencies about dozen of GHz in contrast to the standard incandescent lamps. We compare the IDLEs with the combined injection under consideration and IDLEs using the carrier Joule heating by lateral current. The obtained results can be used for the IDLE optimization. △ Less

Submitted 10 October, 2020; originally announced October 2020.

Comments: 19 pages, 6 figures

Ultrashort Pulse Detection and Response Time Analysis Using Plasma-wave Terahertz Field Effect Transistors

Authors: Yuhui Zhang, Michael S. Shur

Abstract: We report on the response characteristics of plasmonic terahertz field-effect transistors (TeraFETs) fed with femtosecond and picosecond pulses. Varying the pulse width (tpw) from 10-15 s to 10-10 s under a constant input power condition revealed two distinctive pulse detection modes. In the short pulse mode (tpw << L/s, where L is the gated channel length, s is the plasma velocity), the source-to… ▽ More We report on the response characteristics of plasmonic terahertz field-effect transistors (TeraFETs) fed with femtosecond and picosecond pulses. Varying the pulse width (tpw) from 10-15 s to 10-10 s under a constant input power condition revealed two distinctive pulse detection modes. In the short pulse mode (tpw << L/s, where L is the gated channel length, s is the plasma velocity), the source-to-drain voltage response is a sharp pulse oscillatory decay preceded by a delay time on the order of L/s. The plasma wave travels along the channel like the shallow water wave with a relatively narrow wave package. In the long pulse mode (tpw > L/s), the response profile has two oscillatory decay processes and the propagation of plasma wave is analogues to oscillating rod with one side fixed. The ultimate response time at the long pulse mode is significantly higher than that under the short pulse conditions. The detection conditions under the long pulse mode are close to the step response condition, and the response time conforms well to the analytical theory for the step function response. The simulated waveform agrees well with the measured pulse response. Our results show that the measurements of the pulse response enable the material parameter extraction from the pulse response data (including the effective mass, kinematic viscosity and momentum relaxation time). △ Less

Submitted 20 September, 2020; originally announced September 2020.

Comments: 9 pages, 13 figures

High Brightness Lasing at Sub-micron Enabled by Droop-Free Fin Light-Emitting Diodes

Authors: Babak Nikoobakht, Robin P. Hansen, Yuqin Zong, Amit Agrawal, Michael Shur, Jerry Tersoff

Abstract: Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range. Here we present a fin p-n junction LED pixel that eliminates efficiency droop, allowing LEDs brightness to increase linearly with injected current. With record… ▽ More Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range. Here we present a fin p-n junction LED pixel that eliminates efficiency droop, allowing LEDs brightness to increase linearly with injected current. With record current densities of 1000 KA/cm2 (100 mA), the LEDs transition to lasing within the fin, with high brightness. Despite a light extraction efficiency of only 15%, these devices exceed the output power of any previous electrically-driven sub-micron LED or laser pixel by 100 to 1000 times, while showing comparable external quantum efficiencies. Modeling suggests that spreading of the electron-hole recombination region in fin LEDs at high injection levels suppresses the non-radiative Auger recombination processes. Further refinement of this design is expected to enable development of a new generation of high brightness electrically addressable LED and laser pixels for macro- and micro-scale applications. △ Less

Submitted 20 June, 2020; originally announced July 2020.

Comments: 32 pages, 5 figures

p-Diamond, Si, GaN and InGaAs TeraFETs

Authors: Yuhui Zhang, Michael S. Shur

Abstract: p-diamond field effect transistors (FETs) featuring large effective mass, long momentum relaxation time and high carrier mobility are a superb candidate for plasmonic terahertz (THz) applications. Previous studies have shown that p-diamond plasmonic THz FETs (TeraFETs) could operate in plasmonic resonant mode at a low frequency window of 200 GHz to ~600 GHz, thus showing promising potential for be… ▽ More p-diamond field effect transistors (FETs) featuring large effective mass, long momentum relaxation time and high carrier mobility are a superb candidate for plasmonic terahertz (THz) applications. Previous studies have shown that p-diamond plasmonic THz FETs (TeraFETs) could operate in plasmonic resonant mode at a low frequency window of 200 GHz to ~600 GHz, thus showing promising potential for beyond 5G sub-THz applications. In this work, we explore the advantages of p-diamond transistors over n-diamond, Si, GaN and InGaAs TeraFETs and estimate the minimum mobility required for the resonant plasmons. Our numerical simulation shows that the p-diamond TeraFET has a relatively low minimum resonant mobility, and thus could enable resonant detection. The diamond response characteristics can be adjusted by changing operating temperature. A decrease of temperature from 300 K to 77 K improves the detection performance of TeraFETs. At both room temperature and 77 K, the p-diamond TeraFET presents a high detection sensitivity in a large dynamic range. When the channel length is reduced to 20 nm, the p-diamond TeraFET exhibits the highest DC response among all types of TeraFETs in a large frequency window. △ Less

Submitted 23 July, 2020; v1 submitted 15 June, 2020; originally announced June 2020.

Plasmonic Instabilities in Two-dimensional Electron Channels of Variable Width

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: Understanding of fundamental physics of plasmonic instabilities is the key issue for the design of a new generation of compact electronic devices required for numerous THz applications. Variable width plasmonic devices have emerged as potential candidates for such an application. The analysis of the variable width plasmonic devices presented in this paper shows that these structures enable both th… ▽ More Understanding of fundamental physics of plasmonic instabilities is the key issue for the design of a new generation of compact electronic devices required for numerous THz applications. Variable width plasmonic devices have emerged as potential candidates for such an application. The analysis of the variable width plasmonic devices presented in this paper shows that these structures enable both the Dyakonov-Shur instability (when the electron drift velocity everywhere in the device remains smaller than the plasma velocity) and the "plasmonic boom" instability that requires drift velocity exceeding the plasma velocity in some of the device sections. For symmetrical structures, the drifting current could be provided by an RF signal leading to RF to THz and THz to RF frequency conversion using the source and drain antennas and reducing losses associated with ohmic contacts. We show that narrow regions protruding from the channel ("plasmonic stubs") could control and optimize boundary conditions at the contacts and/or at the interfaces between different device sections. These sections could be combined into plasmonic crystals yielding enhanced power and a better impedance matching. The mathematics of the problems is treated using the transmission line analogy. We show that the combination of the stubs and the variable width channels is required for the instability rise in an optimized plasmonic crystal. Our estimates show that THz plasmonic crystal oscillators could operate at room temperature. △ Less

Submitted 4 April, 2020; originally announced April 2020.

Comments: 15 pages,10 figures

Journal ref: Phys. Rev. B 101, 245404 (2020)

Palindromic k-Factorization in Pure Linear Time

Authors: Mikhail Rubinchik, Arseny M. Shur

Abstract: Given a string $s$ of length $n$ over a general alphabet and an integer $k$, the problem is to decide whether $s$ is a concatenation of $k$ nonempty palindromes. Two previously known solutions for this problem work in time $O(kn)$ and $O(n\log n)$ respectively. Here we settle the complexity of this problem in the word-RAM model, presenting an $O(n)$-time online deciding algorithm. The algorithm si… ▽ More Given a string $s$ of length $n$ over a general alphabet and an integer $k$, the problem is to decide whether $s$ is a concatenation of $k$ nonempty palindromes. Two previously known solutions for this problem work in time $O(kn)$ and $O(n\log n)$ respectively. Here we settle the complexity of this problem in the word-RAM model, presenting an $O(n)$-time online deciding algorithm. The algorithm simultaneously finds the minimum odd number of factors and the minimum even number of factors in a factorization of a string into nonempty palindromes. We also demonstrate how to get an explicit factorization of $s$ into $k$ palindromes with an $O(n)$-time offline postprocessing. △ Less

Submitted 5 July, 2020; v1 submitted 10 February, 2020; originally announced February 2020.

Comments: accepted to MFCS 2020

MSC Class: 68W32

Hydrodynamic Inverse Faraday Effect in Two Dimensional Electron Liquid

Authors: S. O. Potashin, V. Yu. Kachorovskii, M. S. Shur

Abstract: We show that a small conducting object, such as a nanosphere or a nanoring, embedded into or placed in the vicinity of the two-dimensional electron liquid (2DEL) and subjected to a circularly polarized electromagnetic radiation induces ``twisted'' plasmonic oscillations in the adjacent 2DEL. The oscillations are rectified due to the hydrodynamic nonlinearities leading to the helicity sensitive cir… ▽ More We show that a small conducting object, such as a nanosphere or a nanoring, embedded into or placed in the vicinity of the two-dimensional electron liquid (2DEL) and subjected to a circularly polarized electromagnetic radiation induces ``twisted'' plasmonic oscillations in the adjacent 2DEL. The oscillations are rectified due to the hydrodynamic nonlinearities leading to the helicity sensitive circular dc current and to a magnetic moment. This hydrodynamic inverse Faraday effect (HIFE) can be observed at room temperature in different materials. The HIFE is dramatically enhanced in a periodic array of the nanospheres forming a resonant plasmonic coupler. Such a coupler exposed to a circularly polarized wave converts the entire 2DEL into a vortex state. Hence, the twisted plasmonic modes support resonant plasmonic-enhanced gate-tunable optical magnetization. Due to the interference of the plasmonic and Drude contributions, the resonances have an asymmetric Fano-like shape. These resonances present a signature of the 2DEL properties not affected by contacts and interconnects and, therefore, providing the most accurate information about the 2DEL properties. In particular, the widths of the resonances encode direct information about the momentum relaxation time and viscosity of the 2DEL. △ Less

Submitted 10 August, 2020; v1 submitted 22 January, 2020; originally announced January 2020.

Comments: 18 pages, 8 figures, 2 tables, replaced with published version

Journal ref: Phys. Rev. B 102, 085402 (2020)

Plasmonic FET Terahertz Spectrometer

Authors: Xueqing Liu, Trond Ytterdal, Michael Shur

Abstract: We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with different subranges corresponding to the transistors with different features sizes and tunable by the gate bias. The spectrometer uses a symmetrical FET with inter… ▽ More We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with different subranges corresponding to the transistors with different features sizes and tunable by the gate bias. The spectrometer uses a symmetrical FET with interchangeable source and drain with the rectified THz voltage between the source and drain being proportional to the sine of the phase shift between the voltages induced by the THz signal between gate-to-drain and gate-to-source. This phase difference could be created by using different antennas for the source-to-gate and drain-to gate contacts or by using a delay line introducing a phase shift or even by manipulating the impinging angle of the two antennas. The spectrometers are simulated using the multi-segment unified charge control model implemented in SPICE and ADS and accounting for the electron inertia effect and the distributed channel resistances, capacitances and Drude inductances. △ Less

Submitted 16 January, 2020; originally announced January 2020.

Comments: 5 pages, 10 figures, submission to IEEE Access

TCAD modeling for SiGe HBT THz detectors

Authors: Xueqing Liu, John Suarez, Michael Shur

Abstract: Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs we simulate their current-voltage characteristics and their response to sub-THz (300\,GHz) radiation. Applying different mixed mode schemes in TCAD, we simulat… ▽ More Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs we simulate their current-voltage characteristics and their response to sub-THz (300\,GHz) radiation. Applying different mixed mode schemes in TCAD, we simulated the dynamic range of the THz response for SiGe HBTs and showed that it is comparable with that of the TeraFET detectors. The HBT response to the variations of the detector design parameters are investigated at different frequencies with the harmonic balance simulation in TCAD. These results are useful for the physical design and optimization for the HBT THz detectors and for the identification of faulty SiGe HBT and Si BiCMOS circuits using sub-THz or THz scanning. △ Less

Submitted 15 November, 2019; originally announced November 2019.

Comments: 4 pages, 7 figures, submitted to URSI 2020 conference

TCAD model for TeraFET detectors operating in a large dynamic range

Authors: Xueqing Liu, Michael S. Shur

Abstract: We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analyt… ▽ More We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect. △ Less

Submitted 13 August, 2019; originally announced August 2019.

Comments: 5 pages, 9 figures

Negative terahertz conductivity at vertical carrier injection in a black-Arsenic-Phosphorus-Graphene heterostructure integrated with a light-emitting diode

Authors: Victor Ryzhii, Maxim Ryzhii, Taiichi Otsuji, Valery E. Karasik, Vladimir G. Leiman, Vladimir Mitin, Michael S. Shur

Abstract: We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As$_{1-x}$P$_x$L-GL-LED heterostructure can serve as an active part of the terahertz (THz) laser using the interband radiative transitions in the GL. The feasibility of the proposed concept is enabled by… ▽ More We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As$_{1-x}$P$_x$L-GL-LED heterostructure can serve as an active part of the terahertz (THz) laser using the interband radiative transitions in the GL. The feasibility of the proposed concept is enabled by the combination of relatively narrow energy gap in the b-As$_{1-x}$P$_x$L and the proper band alignment with the GL. The operation of the device in question is associated with the generation of the electron-hole pairs by the LED emitted near-infrared radiation in the b-As$_{1-x}$P$_x$L, cooling of the photogenerated electrons and holes in this layer, and their injection into the GL. Since the minimum b-As$_{1-x}$PL energy gap is smaller than the energy of optical phonons in the GL, , the injection into the GL can lead to a relatively weak heating of the two-dimensional electron-hole plasma (2D-EHP) in the GL. At the temperatures somewhat lower than the room temperature, the injection can cool the 2D-EHP. This is beneficial for the interband population inversion in the GL, reinforcement of its negative dynamic conductivity, %in the THz range and the realization of the optical and plasmonic modes lasing supporting the new types of the THz radiation sources. △ Less

Submitted 30 January, 2019; originally announced January 2019.

Comments: 10 pages, 4 figures

Terahertz Plasmonic Detector Controlled by Phase Asymmetry

Authors: I. V. Gorbenko, V. Yu. Kachorovskii, Michael Shur

Abstract: We demonstrate that phase-difference between terahertz signals on the source and drain of a field effect transistor (a TeraFET) induces a plasmon-assisted dc current, which is dramatically enhanced in vicinity of plasmonic resonances. We describe a TeraFET operation with identical amplitudes of radiation on source and drain antennas but with a phase-shift-induced asymmetry. In this regime, the Ter… ▽ More We demonstrate that phase-difference between terahertz signals on the source and drain of a field effect transistor (a TeraFET) induces a plasmon-assisted dc current, which is dramatically enhanced in vicinity of plasmonic resonances. We describe a TeraFET operation with identical amplitudes of radiation on source and drain antennas but with a phase-shift-induced asymmetry. In this regime, the TeraFET operates as a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz range of frequencies. We also propose an effective scheme of a phase-sensitive homodyne detector operating in a phase-asymmetry mode, which allows for a dramatic enhancement of the response. These regimes can be implemented in different materials systems including silicon. The p-diamond TeraFETs could support operation in the 200 to 600 GHz atmospheric windows. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Comments: 9 pages, 7 figures

Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, A. A. Dubinov, V. Ya. Aleshkin, V. E. Karasik, M. S. Shur

Abstract: We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p$^+$PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about… ▽ More We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p$^+$PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about 200 meV), the hole injection can effectively cool down the two-dimensional electron-hole plasma in the GL. This simplifies the realization of the interband population inversion and the achievement of the negative dynamic conductivity in the terahertz (THz) frequency range enabling the amplification of the surface plasmon modes. The later can lead to the plasmon lasing. The conversion of the plasmons into the output radiation can be used for a new types of the THz sources. △ Less

Submitted 2 January, 2019; originally announced January 2019.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 100, 115436 (2019)

Transition Property For Cube-Free Words

Authors: Elena A. Petrova, Arseny M. Shur

Abstract: We study cube-free words over arbitrary non-unary finite alphabets and prove the following structural property: for every pair $(u,v)$ of $d$-ary cube-free words, if $u$ can be infinitely extended to the right and $v$ can be infinitely extended to the left respecting the cube-freeness property, then there exists a "transition" word $w$ over the same alphabet such that $uwv$ is cube free. The cruci… ▽ More We study cube-free words over arbitrary non-unary finite alphabets and prove the following structural property: for every pair $(u,v)$ of $d$-ary cube-free words, if $u$ can be infinitely extended to the right and $v$ can be infinitely extended to the left respecting the cube-freeness property, then there exists a "transition" word $w$ over the same alphabet such that $uwv$ is cube free. The crucial case is the case of the binary alphabet, analyzed in the central part of the paper. The obtained "transition property", together with the developed technique, allowed us to solve cube-free versions of three old open problems by Restivo and Salemi. Besides, it has some further implications for combinatorics on words; e.g., it implies the existence of infinite cube-free words of very big subword (factor) complexity. △ Less

Submitted 28 December, 2018; originally announced December 2018.

Comments: 14 pages, 5 figures

MSC Class: 68R15

Single TeraFET Radiation Spectrometer

Authors: I. Gorbenko, V. Kachorovskii, Michael Shur

Abstract: The new TeraFET design with identical source and drain antennas enables a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz (THz) range of frequencies at room temperature. It could be implemented in different materials systems including silicon. The p-diamond TeraFETs support operation in the 200 to 600 GHz windows. The new TeraFET design with identical source and drain antennas enables a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz (THz) range of frequencies at room temperature. It could be implemented in different materials systems including silicon. The p-diamond TeraFETs support operation in the 200 to 600 GHz windows. △ Less

Submitted 13 September, 2018; originally announced October 2018.

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

Authors: V. Ryzhii, M. Ryzhii, D. S. Ponomarev, V. G. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hot-carrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with t… ▽ More We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hot-carrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with the carrier heating by the incident radiation absorbed in the G-layer due to the intraband transitions. The carrier heating leads to the relocation of a significant fraction of the carriers into the P-layer. Due to a relatively low mobility of the carriers in the P-layer, their main role is associated with a substantial reinforcement of the scattering of the carriers. The GP-FET bolometric photodetector characteristics are effectively controlled by the gate voltage. A strong negative conductivity of the GP-channel can provide much higher responsivity of the THz hot-carriers GP-LD and GP-FET bolometric photodetectors in comparison with the bolometers with solely the G-channels. △ Less

Submitted 27 August, 2018; originally announced August 2018.

Comments: 12 pages, 5 figures

Plasmonic Helicity-Driven Detector of terahertz radiation

Authors: I. V. Gorbenko, V. Yu. Kachorovskii, M. S. Shur

Abstract: We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the plasmonic resonances and oscillates with the phase shift between excitation signals on the source and drain. The resonance line shape is an asymmetric function… ▽ More We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the plasmonic resonances and oscillates with the phase shift between excitation signals on the source and drain. The resonance line shape is an asymmetric function of the frequency deviation from the resonance. In contrast, the helicity-insensitive part of the response is symmetrical. These properties yield significant advantage for using plasmonic detectors as terahertz and far infrared spectrometers and interferometers. △ Less

Submitted 14 July, 2018; originally announced July 2018.

Comments: 5 pages, 2 figures

Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

Authors: V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, P. P. Maltsev, D. S. Ponomarev, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstra… ▽ More We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstrate that a strong electric-field dependence of the G-P-channel conductivity and substantially non-linear current-voltage characteristics, exhibiting a negative differential conductivity, are associated with the carrier heating and the real-space carrier transfer between the G- and P-layers. The predicted features of the G-P-systems can be used in the detectors and sources of electromagnetic radiation and in the logical circuits. △ Less

Submitted 4 July, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

Comments: 11 pges, 8 figures

Plasmons in ballistic nanostructures with stubs: transmission line approach

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: The plasma wave instabilities in ballistic Field Effect Transistors (FETs) have a promise of developing sensitive THz detectors and efficient THz sources. One of the difficulties in achieving efficient resonant plasmonic detection and generation is assuring proper boundary conditions at the contacts and at the heterointerfaces and tuning the plasma velocity. We propose using the tunable narrow cha… ▽ More The plasma wave instabilities in ballistic Field Effect Transistors (FETs) have a promise of developing sensitive THz detectors and efficient THz sources. One of the difficulties in achieving efficient resonant plasmonic detection and generation is assuring proper boundary conditions at the contacts and at the heterointerfaces and tuning the plasma velocity. We propose using the tunable narrow channel regions of an increased width, which we call "stubs" for optimizing the boundary conditions and for controlling the plasma velocity. We developed a compact model for THz plasmonic devices using the transmission line (TL) analogy. The mathematics of the problem is similar to the mathematics of a TL with a stub. We applied this model to demonstrate that the stubs could effectively control the boundary conditions and/or the conditions at interfaces. We derived and solved the dispersion equation for the device with the stubs and showed that periodic or aperiodic systems of stubs allow for slowing down the plasma waves in a controllable manner in a wide range. Our results show that the stub designs provide a way to achieve the optimum boundary conditions and could also be used for multi finger structures - stub plasmonic crystals - yielding better performance of THz electronic detectors, modulators, mixers, frequency multipliers and sources. △ Less

Submitted 2 June, 2018; originally announced June 2018.

Comments: 13 pages, 9 figures