Showing 1–12 of 12 results for author: Shahrjerdi, D

The study of contact properties in edge-contacted graphene-aluminum Josephson junctions

Authors: Zhujun Huang, Neda Lotfizadeh, Bassel H. Elfeky, Kim Kisslinger, Edoardo Cuniberto, Peng Yu, Mehdi Hatefipour, Takashi Taniguchi, Kenji Watanabe, Javad Shabani, Davood Shahrjerdi

Abstract: Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical comp… ▽ More Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical component of the edge contact etch process. Our results compare favorably with state-of-the-art graphene Josephson junctions. The findings of our study contribute to advancing the fabrication knowledge of edge-contacted superconductor-graphene junctions. △ Less

Submitted 5 December, 2022; originally announced December 2022.

How to Report and Benchmark Emerging Field-Effect Transistors

Authors: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Abstract: Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc… ▽ More Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully. △ Less

Submitted 4 August, 2022; v1 submitted 30 March, 2022; originally announced March 2022.

Comments: 15 pages, 3 figures

Journal ref: Nature Electronics 5 (2022) 416-423

Second derivative analysis and alternative data filters for multi-dimensional spectroscopies: a Fourier-space perspective

Authors: Rongjie Li, Xiaoni Zhang, Lin Miao, Luca Stewart, Erica Kotta, Dong Qian, Konstantine Kaznatcheev, Jerzy T. Sadowski, Elio Vescovo, Abdullah Alharbi, Ting Wu, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi, L. Andrew Wray

Abstract: The second derivative image (SDI) method is widely applied to sharpen dispersive data features in multi-dimensional spectroscopies such as angle resolved photoemission spectroscopy (ARPES). Here, the SDI function is represented in Fourier space, where it has the form of a multi-band pass filter. The interplay of the SDI procedure with undesirable noise and background features in ARPES data sets is… ▽ More The second derivative image (SDI) method is widely applied to sharpen dispersive data features in multi-dimensional spectroscopies such as angle resolved photoemission spectroscopy (ARPES). Here, the SDI function is represented in Fourier space, where it has the form of a multi-band pass filter. The interplay of the SDI procedure with undesirable noise and background features in ARPES data sets is reviewed, and it is shown that final image quality can be improved by eliminating higher Fourier harmonics of the SDI filter. We then discuss extensions of SDI-like band pass filters to higher dimensional data sets, and how one can create even more effective filters with some a priori knowledge of the spectral features. △ Less

Submitted 23 June, 2019; originally announced June 2019.

Comments: 7 pages, 5 figures

A Wideband Sliding Correlator-Based Channel Sounder with Synchronization in 65 nm CMOS

Authors: Ting Wu, Theodore S. Rappaport, Michael E. Knox, Davood Shahrjerdi

Abstract: A programmable ultra-wideband sliding correlator-based channel sounder with high temporal and spatial resolution is designed in standard 65 nm CMOS. The baseband chip can be configured either as a baseband transmitter to generate a pseudorandom spread spectrum signal with flexible sequence lengths, or as a baseband receiver with sliding correlator having an absolute timing reference to obtain powe… ▽ More A programmable ultra-wideband sliding correlator-based channel sounder with high temporal and spatial resolution is designed in standard 65 nm CMOS. The baseband chip can be configured either as a baseband transmitter to generate a pseudorandom spread spectrum signal with flexible sequence lengths, or as a baseband receiver with sliding correlator having an absolute timing reference to obtain power delay profiles of the multipath components of the wireless channel. The sequence achieved a chip rate of one Giga-bit-per-second, resulting in a multipath delay resolution of 1 ns. The baseband chip occupies an area of 0.66 mm x 1 mm with a power dissipation of 6 mA at 1.1 V in 65 nm CMOS. The sliding correlator-based channel sounder in this work is a critical block for future low-cost, miniaturized channel sounding systems used in accurate and efficient channel propagation measurements at millimeter-wave frequencies. △ Less

Submitted 19 April, 2019; originally announced April 2019.

Comments: 5 pages, 7 figures, IEEE International Symposium on Circuits and Systems (ISCAS) 2019

Quantitative principles for precise engineering of sensitivity in carbon-based electrochemical sensors

Authors: Ting Wu, Abdullah Alharbi, Roozbeh Kiani, Davood Shahrjerdi

Abstract: A major practical barrier for implementing carbon-based electrode arrays with high device-packing density is to ensure large, predictable, and homogeneous sensitivities across the array. Overcoming this barrier depends on quantitative models to predict electrode sensitivity from its material structure. However, such models are currently lacking. Here, we show that the sensitivity of multilayer gra… ▽ More A major practical barrier for implementing carbon-based electrode arrays with high device-packing density is to ensure large, predictable, and homogeneous sensitivities across the array. Overcoming this barrier depends on quantitative models to predict electrode sensitivity from its material structure. However, such models are currently lacking. Here, we show that the sensitivity of multilayer graphene electrodes increases linearly with the average point defect density, whereas it is unaffected by line defects or oxygen-containing groups. These quantitative relationships persist until the electrode material transitions to a fully disordered sp2 carbon, where sensitivity declines sharply. We show that our results generalize to a variety of graphene production methods and use them to derive a predictive model that guides nano-engineering graphene structure for optimum sensitivity. Our approach achieves reproducible fabrication of miniaturized sensors with extraordinarily higher sensitivity than conventional material. These results lay the foundation for new integrated electrochemical sensor arrays based on nano-engineered graphene. △ Less

Submitted 22 June, 2018; originally announced June 2018.

Optical identification using imperfections in 2D materials

Authors: Yameng Cao, Alexander J. Robson, Abdullah Alharbi, Jonathan Roberts, Christopher S. Woodhead, Yasir J. Noori, Ramón Bernardo-Gavito, Davood Shahrjerdi, Utz Roedig, Vladimir I. Falko, Robert J. Young

Abstract: The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to… ▽ More The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle-adjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting. △ Less

Submitted 24 June, 2017; originally announced June 2017.

Comments: 14 pages, 5 figures

Physical cryptographic primitives by chemical vapor deposition of layered MoS2

Authors: Abdullah Alharbi, Darren Armstrong, Somayah Alharbi, Davood Shahrjerdi

Abstract: Development of physical cryptographic primitives for generating strong security keys is central to combating security threats such as counterfeiting and unauthorized access to electronic devices. We introduce a new class of physical cryptographic primitives from layered molybdenum disulfide (MoS2) which leverages the unique properties of this material system. Using chemical vapor deposition, we sy… ▽ More Development of physical cryptographic primitives for generating strong security keys is central to combating security threats such as counterfeiting and unauthorized access to electronic devices. We introduce a new class of physical cryptographic primitives from layered molybdenum disulfide (MoS2) which leverages the unique properties of this material system. Using chemical vapor deposition, we synthesize a MoS2 monolayer film covered with speckles of multilayer islands, where the growth process is engineered for an optimal speckle density. The physical cryptographic primitive is an array of 2048 pixels fabricated from this film. Using the Clark-Evans test, we confirm that the distribution of islands on the film exhibits complete spatial randomness, making this cryptographic primitive ideal for security applications. A unique optical response is generated by applying an optical stimulus to the structure. The basis for this unique response is the dependence of the photoemission on the number of MoS2 layers which by design is random throughout the film. The optical response is used to generate cryptographic keys. Standard security tests confirm the uniqueness, reliability, and uniformity of these keys. This study reveals a new opportunity for generating strong and versatile nano-engineered security primitives from layered transition metal dichalcogenides. △ Less

Submitted 21 June, 2017; originally announced June 2017.

A 700uW 1GS/s 4-bit Folding-Flash ADC in 65nm CMOS for Wideband Wireless Communications

Authors: Bayan Nasri, Sunit P. Sebastian, Kae-Dyi You, RamKumar RanjithKumar, Davood Shahrjerdi

Abstract: We present the design of a low-power 4-bit 1GS/s folding-flash ADC with a folding factor of two. The design of a new unbalanced double-tail dynamic comparator affords an ultra-low power operation and a high dynamic range. Unlike the conventional approaches, this design uses a fully matched input stage, an unbalanced latch stage, and a two-clock operation scheme. A combination of these features yie… ▽ More We present the design of a low-power 4-bit 1GS/s folding-flash ADC with a folding factor of two. The design of a new unbalanced double-tail dynamic comparator affords an ultra-low power operation and a high dynamic range. Unlike the conventional approaches, this design uses a fully matched input stage, an unbalanced latch stage, and a two-clock operation scheme. A combination of these features yields significant reduction of the kick-back noise, while allowing the design flexibility for adjusting the trip points of the comparators. As a result, the ADC achieves SNDR of 22.3 dB at 100MHz and 21.8 dB at 500MHz (i.e. the Nyquist frequency). The maximum INL and DNL are about 0.2 LSB. The converter consumes about 700uW from a 1-V supply yielding a figure of merit of 65fJ/conversion step. These attributes make the proposed folding-flash ADC attractive for the next-generation wireless applications. △ Less

Submitted 14 December, 2016; originally announced December 2016.

Comments: submitted to the the IEEE International Symposium of Circuits and Systems (ISCAS), 2017

Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

Authors: Cheng-Chih Hsieh, Yao-Feng Chang, Ying-Chen Chen, Heng-Lu Chang, Davood Shahrjerdi, Sanjay. K. Banerjee

Abstract: In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equati… ▽ More In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays. △ Less

Submitted 9 May, 2016; originally announced May 2016.

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Authors: Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang, Davood Shahrjerdi, Sanjay K. Banerjee

Abstract: Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses. However, the characteristics of the existing memristors do not fully support the key requirements of synaptic connections: high density, adjustable weight, and low… ▽ More Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses. However, the characteristics of the existing memristors do not fully support the key requirements of synaptic connections: high density, adjustable weight, and low energy operation. Here we show a bilayer memristor that is forming-free, low-voltage (~|0.8V|), energy-efficient (full On/Off switching at ~2pJ), and reliable. Furthermore, pulse measurements reveal the analog nature of the memristive device, that is it can be directly programmed to intermediate resistance states. Leveraging this finding, we demonstrate spike-timing-dependent plasticity (STDP), a spike-based Hebbian learning rule4. In those experiments, the memristor exhibits a marked change in the normalized synaptic strength (>30 times) when the pre- and post-synaptic neural spikes overlap. This demonstration is an important step towards the physical construction of high density and high connectivity neural networks. △ Less

Submitted 12 March, 2016; originally announced March 2016.

Comments: 11 pages of main text, 3 pages of supplementary information, 5 figures, submitted for Advanced Materials

Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

Authors: Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan, Davood Shahrjerdi, Sanjay K. Banerjee, Emanuel Tutuc

Abstract: We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We… ▽ More We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio. △ Less

Submitted 9 December, 2009; originally announced December 2009.

Comments: 5 pages, 4 figures. IEEE Transactions on Electron Devices (in press)

Journal ref: IEEE Transactions on Electron Devices 57, pp. 491-495 (2010)

Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric

Authors: Seyoung Kim, Junghyo Nah, Insun Jo, Davood Shahrjerdi, Luigi Colombo, Zhen Yao, Emanuel Tutuc, Sanjay K. Banerjee

Abstract: We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and con… ▽ More We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value. △ Less

Submitted 11 September, 2009; v1 submitted 19 January, 2009; originally announced January 2009.

Comments: 3 pages, 3 figures; to appear in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 94, 062107 (2009)