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Reconstruction of Angstrom resolution exit-waves by the application of drift-corrected phase-shifting off-axis electron holography
Authors:
J. Lindner,
U. Ross,
T. Meyer,
V. Boureau,
M. Seibt,
Ch. Jooss
Abstract:
Phase-shifting electron holography is an excellent method to reveal electron wave phase information with very high phase sensitivity over a large range of spatial frequencies. It circumvents the limiting trade-off between fringe spacing and visibility of standard off-axis holography. Previous implementations have been limited by the independent drift of biprism and sample. We demonstrate here an a…
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Phase-shifting electron holography is an excellent method to reveal electron wave phase information with very high phase sensitivity over a large range of spatial frequencies. It circumvents the limiting trade-off between fringe spacing and visibility of standard off-axis holography. Previous implementations have been limited by the independent drift of biprism and sample. We demonstrate here an advanced drift correction scheme for the hologram series that exploits the presence of an interface of the TEM specimen to the vacuum area in the hologram. It allows to obtain reliable phase information up to 2π/452 at the 1 Å information limit of the Titan 80-300 kV environmental transmission electron microscope used, by applying a moderate voltage of 250 V to a single biprism for a fringe spacing of 1 Å. The obtained phase and amplitude information is validated at a thin Pt sample by use of multislice image simulation with the frozen lattice approximation and shows excellent agreement. The presented method is applicable in any TEM equipped with at least one electron biprism and thus enables achieving high resolution off-axis holography in various instruments including those for in-situ applications. A software implementation for the acquisition, calibration and reconstruction is provided.
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Submitted 18 April, 2024; v1 submitted 28 March, 2023;
originally announced March 2023.
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Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions
Authors:
Neha Jha,
Anand Paryar,
Tahereh Sadat Parvini,
Christian Denker,
Pavan K. Vardhanapu,
Gonela Vijaykumar,
Arne Ahrens,
Michael Seibt,
Jagadeesh S. Moodera,
Swadhin K. Mandal,
Markus Münzenberg
Abstract:
Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for developing multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 μm2 and improved morphology.…
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Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for developing multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 μm2 and improved morphology. The nonlinear and weakly temperature-dependent current-voltage (I-V) characteristics in combination with the low organic barrier height suggest tunneling as the dominant transport mechanism in the structurally and dimensionally optimized OMTJs. Cu-PLY-based OMTJs, show a significant magnetoresistance up to 14 percent at room temperature due to the formation of hybrid states at the metal-molecule interfaces called spinterface, which reveals the importance of spin-dependent interfacial modification in OMTJs design. In particular, Cu-PLY OMTJs shows a stable voltage-driven resistive switching response that suggests their use as a new viable and scalable platform for building molecular scale quantum memristors and processors.
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Submitted 12 September, 2022;
originally announced September 2022.
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Selectivity Trends and Role of Adsorbate-Adsorbate Interactions in CO Hydrogenation on Rhodium Catalysts
Authors:
Martin Deimel,
Hector Prats,
Michael Seibt,
Karsten Reuter,
Mie Andersen
Abstract:
Predictive-quality computational modeling of heterogeneously catalyzed reactions has emerged as an important tool for the analysis and assessment of activity and activity trends. In contrast, more subtle selectivities and selectivity trends still pose a significant challenge to prevalent microkinetic modeling approaches that typically employ a mean-field approximation (MFA). Here, we focus on CO h…
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Predictive-quality computational modeling of heterogeneously catalyzed reactions has emerged as an important tool for the analysis and assessment of activity and activity trends. In contrast, more subtle selectivities and selectivity trends still pose a significant challenge to prevalent microkinetic modeling approaches that typically employ a mean-field approximation (MFA). Here, we focus on CO hydrogenation on Rh catalysts with the possible products methane, acetaldehyde, ethanol and water. This reaction has already been subject to a number of experimental and theoretical studies with conflicting views on the factors controlling activity and selectivity towards the more valuable higher oxygenates. Using accelerated first-principles kinetic Monte Carlo (KMC) simulations and explicitly and systematically accounting for adsorbate-adsorbate interactions through a cluster expansion approach, we model the reaction on the low-index Rh(111) and stepped Rh(211) surfaces. We find that the Rh(111) facet is selective towards methane, while the Rh(211) facet exhibits a similar selectivity towards methane and acetaldehyde. This is consistent with the experimental selectivity observed for larger, predominantly (111)-exposing Rh nanoparticles and resolves the discrepancy to earlier first-principles MFA microkinetic work that found the Rh(111) facet to be selective towards acetaldehyde. While the latter work tried to approximately account for lateral interactions through coverage-dependent rate expressions, our analysis demonstrates that this fails to sufficiently capture concomitant correlations among the adsorbed reaction intermediates that crucially determine the overall selectivity.
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Submitted 29 March, 2022;
originally announced March 2022.
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Microstructural analysis of GaN films grown on (1 0 0) MgF$_2$ substrate by 4D nanobeam diffraction and energy-dispersive X-ray spectrometry
Authors:
Tobias Niemeyer,
Kevin Meyer,
Christoph Flathmann,
Tobias Meyer,
Daniel M. Schaadt,
Michael Seibt
Abstract:
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission down to the deep UV range. GaN growth on MgF$_2$ substrates by plasma-assisted molecular beam epitaxy has recently been demonstrated. Here, we report an extensive…
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The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission down to the deep UV range. GaN growth on MgF$_2$ substrates by plasma-assisted molecular beam epitaxy has recently been demonstrated. Here, we report an extensive scanning transmission electron microscopy study of the thin film microstructure for growth at 525 $^{\circ}$C and 650 $^{\circ}$C on (100) MgF$_2$. These results are systematically supported by X-ray diffraction reciprocal space maps. For both growth temperatures predominant cubic (111), (115) and (110) GaN is found with no preferred nucleation on the substrate and typical grain sizes of 100-200 nm. All observed orientations can be understood as the result of first and second order twins on different $\{111\}$ planes related to the underlying substrate. The higher growth temperature shows a strongly increased twin density along with a higher surface roughness. Furthermore, grains with cubic (110) GaN growth show a reduced density and a reduced size of about 20 nm. Furthermore, in-diffusion of Mg and F into the GaN is observed, which is accompanied by the formation of cavities in the MgF$_2$ directly at the interface.
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Submitted 26 October, 2022; v1 submitted 13 October, 2021;
originally announced October 2021.
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Tracing the boron diffusion into a textured silicon solar cell by combining boron diffusion simulation with experimental and simulated scanning transmission electron beam induced current
Authors:
Tobias Meyer,
David A. Ehrlich,
Peter Pichler,
Valeriya Titova,
Christoph Flathmann,
Jan Schmidt,
Michael Seibt
Abstract:
The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar energy conversion, the surface roughness leads to drawbacks as well, e.g. difficulties in measuring diffusion behaviour of dopants in the heterogeneous structure.…
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The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar energy conversion, the surface roughness leads to drawbacks as well, e.g. difficulties in measuring diffusion behaviour of dopants in the heterogeneous structure. In this paper, we employ experimental and simulated scanning transmission electron beam induced current in combination with the simulation of boron diffusion to map a sub 0.1 ppm isoconcentration line underneath the textured surface on the nanoscale. In order to account for surface recombination, an effective two-dimensional model projecting the system along the electron beam propagation direction is used in the finite elements EBIC simulation. We find a good agreement to the experimental data and discuss future strategies to eliminate remaining deviations inside the space charge region.
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Submitted 1 September, 2021;
originally announced September 2021.
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Orbital order phase transition in $Pr_{1-x}Ca_xMnO_3$ probed by photovoltaics
Authors:
B. Kressdorf,
T. Meyer,
M. ten Brink,
C. Seick,
S. Melles,
N. Ottinger,
T. Titze,
H. Meer,
A. Weisser,
J. Hoffmann,
S. Mathias,
H. Ulrichs,
D. Steil,
M. Seibt,
P. E. Blöchl,
C. Jooss
Abstract:
The phase diagram of $Pr_{1-x}Ca_xMnO_3$ is modified x $\le$ 0.3, which suggests a reevaluation of the phase diagram of other manganites in that doping region. Rather than an orbital ordered phase reaching up to high temperatures of approximately 800-1100 K, we propose a loss of spontaneous orbital order already near room temperature. Above this temperature, the phase is characterized by a finite…
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The phase diagram of $Pr_{1-x}Ca_xMnO_3$ is modified x $\le$ 0.3, which suggests a reevaluation of the phase diagram of other manganites in that doping region. Rather than an orbital ordered phase reaching up to high temperatures of approximately 800-1100 K, we propose a loss of spontaneous orbital order already near room temperature. Above this temperature, the phase is characterized by a finite orbital polarization and octahedral tilt pattern. The tilt pattern couples to the Jahn-Teller distortion and thus induces a remaining orbital order, which persists up to high temperatures, where the tilt order is lost as well. This explains the experimental observation of orbital order up to high temperatures. The reevaluation of the orbital order transition is based on observed anomalies of various physical properties at a temperatures of 220-260 K in epitaxial thin films of $Pr_{1-x}Ca_xMnO_3$ x=0.1, i.e.in the photovoltaic effect, electric transport, magnetization, optical and ultrafast transient pump probe studies. Finite-temperature simulations based on a tight-binding model with carefully adjusted parameters from first-principles calculations exhibit an orbital order phase transition at $T_{OO} \approx$ 300 K for x=0.1. This is consistent with the experimental observation of a temperature dependent change in lattice parameter for bulk samples of the same doping at 300 K for x=0.1 and 350 K for x=0, typical for a second order phase transition. Since our reassignment of the orbital order phase transition towards lower temperatures challenges a well-established and long-accepted picture, we provide results of multiple complementary measurements as well as a detailed discussion.
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Submitted 23 December, 2020; v1 submitted 5 November, 2020;
originally announced November 2020.
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Site-specific plan-view TEM lamella preparation of pristine surfaces with a large field of view
Authors:
Tobias Meyer,
Tobias Westphal,
Birte Kressdorf,
Ulrich Ross,
Christian Jooss,
Michael Seibt
Abstract:
Transmission electron microscopy has become a major characterisation tool with an ever increasing variety of methods being applied in wide range of scientific fields. However, the probably most famous pitfall in related workflows is the preparation of high-quality electron-transparent lamellae enabling for extraction of valuable and reliable information. Particularly in the field of solid state ph…
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Transmission electron microscopy has become a major characterisation tool with an ever increasing variety of methods being applied in wide range of scientific fields. However, the probably most famous pitfall in related workflows is the preparation of high-quality electron-transparent lamellae enabling for extraction of valuable and reliable information. Particularly in the field of solid state physics and materials science, it is often required to study the surface of a macroscopic specimen with plan-view orientation. Nevertheless, despite tremendous advances in instrumentation, i.e. focused ion beam, the yield of existing plan-view lamellae preparation techniques is relatively low compared to cross-sectional extraction methods. Furthermore, techniques relying on mechanical treatments, i.e. conventional preparation, compromise site-specifity. In this paper, we demonstrate that by combining a mechanical grinding step prior to backside lift-out in the focused ion beam plan-view lamellae preparation becomes increasingly easy. The suggested strategy combines site-specifity with micrometer precision as well as possible investigation of pristine surfaces with a field of view of several hundred square micrometers.
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Submitted 1 November, 2020;
originally announced November 2020.
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Phase transitions in a perovskite thin film studied by environmental in-situ heating nano-beam electron diffraction
Authors:
Tobias Meyer,
Birte Kressdorf,
Vladimir Roddatis,
Jörg Hoffmann,
Christian Jooss,
Michael Seibt
Abstract:
The rich phase diagram of bulk Pr$_{1-x}$Ca$_{x}$MnO$_3$ resulting in a high tunability of physical properties gave rise to various studies related to fundamental research as well as prospective applications of the material. Importantly, as a consequence of strong correlation effects, electronic and lattice degrees of freedom are vigorously coupled. Hence, it is debatable whether such bulk phase d…
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The rich phase diagram of bulk Pr$_{1-x}$Ca$_{x}$MnO$_3$ resulting in a high tunability of physical properties gave rise to various studies related to fundamental research as well as prospective applications of the material. Importantly, as a consequence of strong correlation effects, electronic and lattice degrees of freedom are vigorously coupled. Hence, it is debatable whether such bulk phase diagrams can be transferred to inherently strained epitaxial thin films. In this paper, the structural orthorhombic to pseudo-cubic transition for $x=0.1$ is studied in ion-beam sputtered thin films and point out differences to the respective bulk system by employing in-situ heating nano-beam electron diffraction to follow the temperature dependence of lattice constants. In addition, it is demonstrated that controlling the environment during heating, i.e. preventing oxygen loss, is crucial in order to avoid irreversible structural changes, which is expected to be a general problem of compounds containing volatile elements under non-equilibrium conditions.
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Submitted 13 October, 2020; v1 submitted 29 July, 2020;
originally announced July 2020.
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Plasma Profiling Time-of-Flight Mass Spectrometry for Fast Elemental Analysis of Semiconductor Structures with Depth Resolution in the Nanometer Range
Authors:
Hendrik Spende,
Christoph Margenfeld,
Tobias Meyer,
Irene Manglano Clavero,
Heiko Bremers,
Andreas Hangleiter,
Michael Seibt,
Andreas Waag,
Andrey Bakin
Abstract:
Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al., PP-TOFMS can be used to obtain the composition in the structures for modern field effect transistors [1]. There, the results were compared to convention…
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Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al., PP-TOFMS can be used to obtain the composition in the structures for modern field effect transistors [1]. There, the results were compared to conventional SIMS measurements. In the present study, we compare PP-TOFMS measurements of an Al-/In-/GaN quantum well multi stack to established micro- and nano-analysis techniques like cathodoluminescence (CL), scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). We show that PP-TOFMS is able to resolve the layer structure of the sample even more than 500 nm deep into the sample and allows the determination of a relative elemental composition with an accuracy of about 10 rel. %. Therefore, it is an extremely rapid alternative method to obtain semiconductor elemental depth profiles without expensive and time consuming sample preparation as it is needed for TEM. Besides, PP-TOFMS offers better depth resolution and more elemental information than for example electrochemical capacitance-voltage (ECV), as the acquisition of all elements occurs in parallel and not only electrically (ECV) or optically (CL) active elements are observed.
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Submitted 2 December, 2019; v1 submitted 27 September, 2019;
originally announced September 2019.
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Spin-transfer torque switching at ultra low current densities
Authors:
Johannes Christian Leutenantsmeyer,
Vladyslav Zbarsky,
Steffen Wittrock,
Marvin Walter,
Patrick Peretzki,
Henning Schuhmann,
Andy Thomas,
Karsten Rott,
Guenter Reiss,
Tae Hee Kim,
Michael Seibt,
Markus Muenzenberg
Abstract:
The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of Boron into the tantalum buffer is considered to play an important role on the switching currents of those devices…
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The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of Boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.2 kA/cm$^2$ is observed. As of today, this value is the lowest reported value for current-induced magnetization reversal.
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Submitted 22 May, 2015; v1 submitted 16 May, 2014;
originally announced May 2014.
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Controlling boron redistribution in CoFeB/MgO magnetic tunnel junctions during annealing by variation of cap layer materials and MgO deposition methods
Authors:
Henning Schuhmann,
Michael Seibt,
Volker Drewello,
Andy Thomas,
Vladyslav Zbarsky,
Marvin Walter,
Markus Münzenberg
Abstract:
Magnetic tunnel junctions with crystalline MgO tunnel barrier and amorphous CoFeB electrodes received much attention due to their high tunnel magneto resistance ratio at room temperature. One important parameter for achieving high tunnel magneto resistance ratios is to control the boron diffusion from the electrodes especially during post growth annealing. By high resolution transmission electron…
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Magnetic tunnel junctions with crystalline MgO tunnel barrier and amorphous CoFeB electrodes received much attention due to their high tunnel magneto resistance ratio at room temperature. One important parameter for achieving high tunnel magneto resistance ratios is to control the boron diffusion from the electrodes especially during post growth annealing. By high resolution transmission electron microscopy and electron energy loss spectroscopy techniques we show that the cap layer material adjacent to the electrodes and the MgO deposition method are crucial to control boron redistribution. It is pointed out, that Ta cap layers acts as sinks for boron during annealing in contrast to Ru layers. Furthermore, radio frequency sputtered MgO tunneling barriers contain a rather high concentraion of boron in trigonal [BO$_3$]$^{3-}$ - environment after annealing in contrast to electron beam evaporated MgO which is virtually free from any boron. Our data further indicate that neither boron nor oxygen-vacancy-related gap states in the bulk of MgO barriers affect spin polarized transport for tunnel magneto resistance ratios at the level of 200%.
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Submitted 8 May, 2014;
originally announced May 2014.
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Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions
Authors:
Johannes Christian Leutenantsmeyer,
Marvin Walter,
Steffen Wittrock,
Patrick Peretzki,
Henning Schuhmann,
Michael Seibt,
Markus Münzenberg
Abstract:
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance (TMR) ratios of up to 64% at 4 monolayer (ML) tunnel barrier thickness. In this paper, the reduction of the critical switching current density is studied. By optimi…
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We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance (TMR) ratios of up to 64% at 4 monolayer (ML) tunnel barrier thickness. In this paper, the reduction of the critical switching current density is studied. By optimizing the applied bias field during DC-STT measurements, ultra low critical switching current densities of less than 20 kA/cm$^2$, even down to 9 kA/cm$^2$, are found. With the reduced switching currents, our samples are ideal candidates for further experimental studies such as the theoretical predicted thermally driven spin-transfer torque effect.
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Submitted 13 September, 2013;
originally announced September 2013.
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Parameter space for thermal spin-transfer torque
Authors:
Johannes Christian Leutenantsmeyer,
Marvin Walter,
Vladyslav Zbarsky,
Markus Münzenberg,
Rashid Gareev,
Karsten Rott,
Andy Thomas,
Günter Reiss,
Patrick Peretzki,
Henning Schuhmann,
Michael Seibt,
Michael Czerner,
Christian Heiliger
Abstract:
Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the order of Kelvins across an ultra thin MgO barrier. In this paper, we present results on the fabrication and the characterization of magnetic tunnel junctions with…
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Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the order of Kelvins across an ultra thin MgO barrier. In this paper, we present results on the fabrication and the characterization of magnetic tunnel junctions with 3 monolayer thin MgO barriers. The quality of the interfaces at different growth conditions is studied quantitatively via high-resolution transmission electron microscopy imaging. We demonstrate tunneling magneto resistance ratios of up to 55% to 64% for 3 to 4 monolayer barrier thickness. Magnetic tunnel junctions with perpendicular magnetization anisotropy show spin-transfer torque switching with a critical current of 0.2 MA/cm$^2$. The thermally generated torque is calculated ab initio using the Korringa-Kohn-Rostoker and non-equilibrium Green's function method. Temperature gradients generated from femtosecond laser pulses were simulated using COMSOL, revealing gradients of 20 K enabling thermal spin-transfer-torque switching.
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Submitted 17 March, 2013; v1 submitted 10 January, 2013;
originally announced January 2013.
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Seebeck Effect in Magnetic Tunnel Junctions
Authors:
Marvin Walter,
Jakob Walowski,
Vladyslav Zbarsky,
Markus Münzenberg,
Markus Schäfers,
Daniel Ebke,
Günter Reiss,
Andy Thomas,
Patrick Peretzki,
Michael Seibt,
Jagadeesh S. Moodera,
Michael Czerner,
Michael Bachmann,
Christian Heiliger
Abstract:
Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient chan…
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Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In that respect, it is the analog to the tunneling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configuration are in the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. Experimentally, we realized 8.8 % magneto-Seebeck effect, which results from a voltage change of about -8.7 μV/K from the antiparallel to the parallel direction close to the predicted value of -12.1 μV/K.
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Submitted 11 July, 2011; v1 submitted 10 April, 2011;
originally announced April 2011.
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Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions
Authors:
Oliver Schebaum,
Volker Drewello,
Alexander Auge,
Günter Reiss,
Markus Münzenberg,
Henning Schuhmann,
Michael Seibt,
Andy Thomas
Abstract:
Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three…
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Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier.
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Submitted 1 December, 2010; v1 submitted 4 August, 2010;
originally announced August 2010.
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Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching
Authors:
M. Schäfers,
V. Drewello,
G. Reiss,
A. Thomas,
K. Thiel,
G. Eilers,
M. Münzenberg,
H. Schuhmann,
M. Seibt
Abstract:
Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation of spin-transfer torque Magnetic Random Access Memory. Intact and broken tunnel junctions are characterized by transport measurements and then prepared for tr…
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Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation of spin-transfer torque Magnetic Random Access Memory. Intact and broken tunnel junctions are characterized by transport measurements and then prepared for transmission electron microscopy and energy dispersive x-ray spectrometry by focussed ion beam. The comparison to our previous model of the electric breakdown for thicker MgO tunnel barriers reveals significant differences arising from the high current densities.
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Submitted 21 July, 2009;
originally announced July 2009.
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Direct imaging of the structural change generated by dielectric breakdown in MgO based magnetic tunnel junctions
Authors:
A. Thomas,
V. Drewello,
M. Schaefers,
A. Weddemann,
G. Reiss,
G. Eilers,
M. Muenzenberg,
K. Thiel,
M. Seibt
Abstract:
MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the tunnel barrier. The breakdown is directly visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared for the microscopy measurements by focussed ion beam out of the junctions characterized by transport investigations. Consequently, a direct comparison of tran…
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MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the tunnel barrier. The breakdown is directly visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared for the microscopy measurements by focussed ion beam out of the junctions characterized by transport investigations. Consequently, a direct comparison of transport behavior and structure of the intact and broken junctions is obtained. Compared to earlier findings in Alumina based junctions, the MgO barrier shows much more microscopic pinholes after breakdown. This can be explained within a simple model assuming a relationship between the current density at the breakdown and the rate of pinhole formation.
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Submitted 12 June, 2008;
originally announced June 2008.
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Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices
Authors:
Anne Parge,
Tore Niermann,
Michael Seibt,
Markus Münzenberg
Abstract:
We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presente…
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We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.
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Submitted 10 October, 2006;
originally announced October 2006.
