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Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure
Authors:
C. P. Dobney,
A. Nasir,
P. See,
C. J. B. Ford,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p-n junctions has been demonstrated by varying the applied bias voltages. An emission…
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We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p-n junctions has been demonstrated by varying the applied bias voltages. An emission peak with a width of ~8 nm is observed around 812 nm. The electroluminescence seen from both junctions is considered to originate from the GaAs quantum well layer in the device. The lithographic techniques that we have developed are compatible for further integration of gated quantum devices such as single-electron pumps to build on-demand single-photon sources.
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Submitted 15 August, 2024;
originally announced August 2024.
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Statistical study and parallelisation of multiplexed single-electron sources
Authors:
S. Norimoto,
P. See,
N. Schoinas,
I. Rungger,
T. O. Boykin II,
M. D. Stewart Jr,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a…
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Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a more practical solution to increase the generated electric current $I = Nef$, where $N$ is a number of parallelised devices. One way to parallelise single-electron sources without increasing the complexity in device operation is to use a common gate. Such a scheme will require each device to have the same operation parameters for single-electron transfer. In order to investigate this possibility, we study the statistics for operation gate voltages using single-electron sources embedded in a multiplexer circuit. The multiplexer circuit allows us to measure 64 single-electron sources individually in a single cooldown. We also demonstrate the parallelisation of three single-electron sources and observe the generated current enhanced by a factor of three.
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Submitted 8 July, 2024;
originally announced July 2024.
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Photon emission by hot electron injection across a lateral \textit{pn} junction
Authors:
S. Norimoto,
R. Saxena,
P. See,
A. Nasir,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is crea…
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We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance.
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Submitted 6 June, 2024;
originally announced June 2024.
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Fast characterization of multiplexed single-electron pumps with machine learning
Authors:
N. Schoinas,
Y. Rath,
S. Norimoto,
W. Xie,
P. See,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka,
A. Rossi,
I. Rungger
Abstract:
We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease…
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We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease the number of measurement points by about an order of magnitude. This corresponds to an eight-fold decrease in the time required to determine quantization errors, which are estimated via an exponential extrapolation of the first current plateau embedded into the algorithm. We show the robustness of the framework by characterizing 28 individual devices arranged in a GaAs/AlGaAs multiplexer array, which we use to identify a subset of devices suitable for parallel operation at communal gate voltages. The method opens up the possibility to efficiently scale the characterization of such multiplexed devices to a large number of pumps.
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Submitted 17 September, 2024; v1 submitted 31 May, 2024;
originally announced May 2024.
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Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy
Authors:
José Bustamante,
Yoichi Miyahara,
Logan Fairgrieve-Park,
Kieran Spruce,
Patrick See,
Neil Curson,
Taylor Stock,
Peter Grutter
Abstract:
The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this work, we introduce a novel Atomic Force Microscope (AFM) instrument capable of measuring critical device dimensions, surface roughness, electrical sur…
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The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this work, we introduce a novel Atomic Force Microscope (AFM) instrument capable of measuring critical device dimensions, surface roughness, electrical surface potential, and ultimately the energy levels of quantum dots and single electron transistors in ultra miniaturized semiconductor devices. Characterization of nanofabricated devices with this type of instrument presents a challenge: finding the device. We therefore also present a process to efficiently find a nanometre size quantum dot buried in a $10 \times 10~\text{mm}^2$ silicon sample using a combination of optical positioning, capacitive sensors and AFM topography in vacuum.
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Submitted 20 March, 2024;
originally announced March 2024.
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Attacking logo-based phishing website detectors with adversarial perturbations
Authors:
Jehyun Lee,
Zhe Xin,
Melanie Ng Pei See,
Kanav Sabharwal,
Giovanni Apruzzese,
Dinil Mon Divakaran
Abstract:
Recent times have witnessed the rise of anti-phishing schemes powered by deep learning (DL). In particular, logo-based phishing detectors rely on DL models from Computer Vision to identify logos of well-known brands on webpages, to detect malicious webpages that imitate a given brand. For instance, Siamese networks have demonstrated notable performance for these tasks, enabling the corresponding a…
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Recent times have witnessed the rise of anti-phishing schemes powered by deep learning (DL). In particular, logo-based phishing detectors rely on DL models from Computer Vision to identify logos of well-known brands on webpages, to detect malicious webpages that imitate a given brand. For instance, Siamese networks have demonstrated notable performance for these tasks, enabling the corresponding anti-phishing solutions to detect even "zero-day" phishing webpages. In this work, we take the next step of studying the robustness of logo-based phishing detectors against adversarial ML attacks. We propose a novel attack exploiting generative adversarial perturbations to craft "adversarial logos" that evade phishing detectors. We evaluate our attacks through: (i) experiments on datasets containing real logos, to evaluate the robustness of state-of-the-art phishing detectors; and (ii) user studies to gauge whether our adversarial logos can deceive human eyes. The results show that our proposed attack is capable of crafting perturbed logos subtle enough to evade various DL models-achieving an evasion rate of up to 95%. Moreover, users are not able to spot significant differences between generated adversarial logos and original ones.
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Submitted 12 September, 2023; v1 submitted 18 August, 2023;
originally announced August 2023.
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Time-resolved Coulomb collision of single electrons
Authors:
J. D. Fletcher,
W. Park,
S. Ryu,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
H. -S. Sim,
M. Kataoka
Abstract:
Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function…
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Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function and decoherence of single electron wavepackets. Due to the effects of screening, none of these experiments were performed in a regime where Coulomb interactions were particularly strong. Here we explore the Coulomb collision of two high energy electrons in counter-propagating ballistic edge states. We show that, in this kind of unscreened device, the partitioning probabilities at different electron arrival times and barrier height are shaped by Coulomb repulsion between the electrons. This prevents the wavepacket overlap required for the manifestation of fermionic exchange statistics but suggests a new class of devices for studying and manipulating interactions of ballistic single electrons.
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Submitted 7 October, 2022;
originally announced October 2022.
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Demonstration of electron focusing using electronic lenses in low-dimensional system
Authors:
Chengyu Yan,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths
Abstract:
We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate charac…
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We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate characteristic of an asymmetrically gate biased quantum point contact with the assistance of focusing lens. A correlation between the occurrence of conductance anomaly in low conductance regime and increase in FWHM of focusing peak is observed. The correlation is likely due to the electron-electron interaction. The reported electron focusing lens is essential for a more advanced electron optics device.
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Submitted 11 February, 2020;
originally announced February 2020.
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Thermoelectric property of a one dimensional channel in the presence of a transverse magnetic field
Authors:
Chengyu Yan,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths
Abstract:
We studied the thermal conduction through a quantum point contact (QPC), defined in GaAs-AlGaAs heterostructure, in the presence of a transverse magnetic field. A shift in the position of thermo-voltage peak is observed with increasing field. The position of the thermo-voltage peak follows the Cutler-Mott relation in the small field regime (B < 0.5 T); it starts diverging from the Cutler-Mott rela…
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We studied the thermal conduction through a quantum point contact (QPC), defined in GaAs-AlGaAs heterostructure, in the presence of a transverse magnetic field. A shift in the position of thermo-voltage peak is observed with increasing field. The position of the thermo-voltage peak follows the Cutler-Mott relation in the small field regime (B < 0.5 T); it starts diverging from the Cutler-Mott relation in the moderate field regime, where a cubic magnetic field term dominates over the trivial quadratic term; eventually the shift saturates in the large field regime (B > 3.0 T). Our results suggest that additional calibration is necessary when using QPC as thermometry, especially when the transverse magnetic field is applied.
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Submitted 8 November, 2019; v1 submitted 14 March, 2019;
originally announced March 2019.
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Continuous-Variable Tomography of Solitary Electrons
Authors:
J. D. Fletcher,
N. Johnson,
E. Locane,
P. See,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
P. W. Brouwer,
V. Kashcheyevs,
M. Kataoka
Abstract:
A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband t…
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A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband tomography of single-particle distributions is possible using energy-time filtering and that the Wigner representation of the mixed-state density matrix can be reconstructed for solitary electrons emitted by an on-demand single-electron source. These are highly localised distributions, isolated from the Fermi sea. While we cannot resolve the pure state Wigner function of our excitations due to classical fluctuations, we can partially resolve the chirp and squeezing of the Wigner function imposed by emission conditions and quantify the quantumness of the source. This tomography scheme, when implemented with sufficient experimental resolution, will enable quantum-limited measurements, providing information on electron coherence and entanglement at the individual particle level.
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Submitted 20 January, 2020; v1 submitted 30 January, 2019;
originally announced January 2019.
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Rectification in mesoscopic AC-gated semiconductor devices
Authors:
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie
Abstract:
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assum…
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We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards.
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Submitted 27 September, 2018;
originally announced September 2018.
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Error detection in a tunable-barrier electron pump
Authors:
S. P. Giblin,
P. See,
J. D. Fletcher,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
M. Kataoka
Abstract:
We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulation…
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We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision.
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Submitted 26 September, 2018;
originally announced September 2018.
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High-resolution error detection in the capture process of a single-electron pump
Authors:
S. P. Giblin,
P. See,
A. Petrie,
T. J. B. M. Janssen,
I. Farrer,
J. P. Griffiths,
G. A. C. Jones,
D. A. Ritchie,
M. Kataoka
Abstract:
The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC curre…
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The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC current, and repeating the protocol more than $10^{6}$ times, we are able to resolve errors with probabilities of order $10^{-6}$. For the studied sample, one-electron capture is affected by errors in $\sim30$ out of every million cycles, while two-electron capture was performed more than $10^6$ times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps.
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Submitted 26 September, 2018;
originally announced September 2018.
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Magnetoresistance in an electronic cavity coupled to one-dimensional systems
Authors:
Chengyu Yan,
Sanjeev Kumar,
Patrick See,
Ian Farrer,
David Ritchie,
J. P. Griffiths,
G. A. C. Jones,
Michael Pepper
Abstract:
In this work, we performed magnetoresistance measurement in a hybrid system consisting of an arc-shaped quantum point contact (QPC) and a flat, rectangular QPC, both of which together form an electronic cavity between them. The results highlight a transition between collimation-induced resistance dip to a magnetoresistance peak as the strength of coupling between the QPC and the electronic cavity…
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In this work, we performed magnetoresistance measurement in a hybrid system consisting of an arc-shaped quantum point contact (QPC) and a flat, rectangular QPC, both of which together form an electronic cavity between them. The results highlight a transition between collimation-induced resistance dip to a magnetoresistance peak as the strength of coupling between the QPC and the electronic cavity was increased. The initial results show the promise of hybrid quantum system for future quantum technologies.
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Submitted 10 September, 2018;
originally announced September 2018.
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Incipient singlet-triplet states in a hybrid mesoscopic system
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
In the present work we provide an easily accessible way to achieve the singlet-triplet Kondo effect in a hybrid system consisting of a quantum point contact (QPC) coupled to an electronic cavity. We show that by activating the coupling between the QPC and cavity, a zero-bias anomaly occurs in a low conductance regime, a coexistence of zero-bias and finite-bias anomaly (FBA) in a medium conductance…
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In the present work we provide an easily accessible way to achieve the singlet-triplet Kondo effect in a hybrid system consisting of a quantum point contact (QPC) coupled to an electronic cavity. We show that by activating the coupling between the QPC and cavity, a zero-bias anomaly occurs in a low conductance regime, a coexistence of zero-bias and finite-bias anomaly (FBA) in a medium conductance regime, and a FBA-only anomaly in a high conductance regime. The latter two observations are due to the singlet-triplet Kondo effect.
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Submitted 28 June, 2018;
originally announced June 2018.
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Existence of Shapiro Steps in the Dissipative Regime in Superconducting Weak Links
Authors:
Connor D. Shelly,
Patrick See,
Ivan Rungger,
Jonathan M. Williams
Abstract:
We present measurements of microwave-induced Shapiro steps in a superconducting nanobridge weak link in the dissipative branch of a hysteretic current-voltage characteristic. We demonstrate that Shapiro steps can be used to infer a reduced critical current and associated effective local temperature. Our observation of Shapiro steps in the dissipative branch hows that a finite Josephson coupling ex…
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We present measurements of microwave-induced Shapiro steps in a superconducting nanobridge weak link in the dissipative branch of a hysteretic current-voltage characteristic. We demonstrate that Shapiro steps can be used to infer a reduced critical current and associated effective local temperature. Our observation of Shapiro steps in the dissipative branch hows that a finite Josephson coupling exists in the dissipative state and thus can be used to put an upper limit on the effective temperature and on the size of the region that can be heated above the critical temperature. This work provides evidence that Josephson behaviour can still exist in thermally-hysteretic weak link devices and will allow extension of the temperature ranges that nanobridge based single flux quantum circuits, nanoSQUIDs and Josephson voltage standards can be used.
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Submitted 30 August, 2019; v1 submitted 27 June, 2018;
originally announced June 2018.
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Coherent Spin Amplification Using a Beam Splitter
Authors:
Chengyu Yan,
Sanjeev Kumar,
Kalarikad Thomas,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones,
Michael Pepper
Abstract:
We report spin amplification using a capacitive beam splitter in n-type GaAs where the spin polarization is monitored via transverse electron focusing measurement. It is shown that partially spin-polarized current injected by the emitter can be precisely controlled and the spin polarization associated with it can be amplified by the beam splitter, such that a considerably high spin polarization of…
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We report spin amplification using a capacitive beam splitter in n-type GaAs where the spin polarization is monitored via transverse electron focusing measurement. It is shown that partially spin-polarized current injected by the emitter can be precisely controlled and the spin polarization associated with it can be amplified by the beam splitter, such that a considerably high spin polarization of around 50% can be obtained. Additionally, the spin remains coherent as shown by the observation of quantum interference. Our results illustrate that spin polarization amplification can be achieved in materials without strong spin-orbit interaction.
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Submitted 27 March, 2018;
originally announced March 2018.
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LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure
Authors:
N. Johnson,
C. Emary,
S. Ryu,
H. -S. Sim,
P. See,
J. D. Fletcher,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper,
T. J. B. M. Janssen,
M. Kataoka
Abstract:
Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a tw…
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Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a two-step process via intra-Landau-level transition. We show this scattering can be suppressed by controlling the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications.
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Submitted 25 December, 2017;
originally announced December 2017.
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Temperature Dependence of Spin-Split Peaks in Transverse Electron Focusing
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
We present experimental results of transverse electron-focusing measurements performed using n-type GaAs. In the presence of a small transverse magnetic field (B), electrons are focused from the injector to detector leading to focusing peaks periodic in B. We show that the odd-focusing peaks exhibit a split, where each sub-peak represents a population of a particular spin branch emanating from the…
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We present experimental results of transverse electron-focusing measurements performed using n-type GaAs. In the presence of a small transverse magnetic field (B), electrons are focused from the injector to detector leading to focusing peaks periodic in B. We show that the odd-focusing peaks exhibit a split, where each sub-peak represents a population of a particular spin branch emanating from the injector. The temperature dependence reveals that the peak splitting is well defined at low temperature whereas it smears out at high temperature indicating the exchange-driven spin polarisation in the injector is dominant at low temperatures.
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Submitted 22 September, 2017;
originally announced September 2017.
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Interference Effects in a Tunable Quantum Point Contact Integrated with an Electronic Cavity
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
We show experimentally how quantum interference can be produced using an integrated quantum system comprising an arch-shaped short quantum wire (or quantum point contact, QPC) of 1D electrons and a reflector forming an electronic cavity. On tuning the coupling between the QPC and the electronic cavity, fine oscillations are observed when the arch QPC is operated in the quasi-1D regime. These oscil…
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We show experimentally how quantum interference can be produced using an integrated quantum system comprising an arch-shaped short quantum wire (or quantum point contact, QPC) of 1D electrons and a reflector forming an electronic cavity. On tuning the coupling between the QPC and the electronic cavity, fine oscillations are observed when the arch QPC is operated in the quasi-1D regime. These oscillations correspond to interference between the 1D states and a state which is similar to the Fabry-Perot state and suppressed by a small transverse magnetic field of 60mT. Tuning the reflector, we find a peak in resistance which follows the behavior expected for a Fano resonance. We suggest that this is an interesting example of a Fano resonance in an open system which corresponds to interference at or near the Ohmic contacts due to a directly propagating, reflected discrete path and the continuum states of the cavity corresponding to multiple scattering. Remarkably, the Fano factor shows an oscillatory behavior taking peaks for each fine oscillation, thus, confirming coupling between the discrete and continuum states. The results indicate that such a simple quantum device can be used as building blocks to create more complex integrated quantum circuits for possible applications ranging from quantum-information processing to realizing the fundamentals of complex quantum systems.
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Submitted 17 August, 2017;
originally announced August 2017.
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Direct observation of exchange-driven spin interactions in one-dimensional system
Authors:
Chengyu Yan,
Sanjeev Kumar,
Kalarikad Thomas,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
J. P. Griffiths,
G. A. C. Jones
Abstract:
We present experimental results of transverse electron focusing measurements performed on an n-type GaAs based mesoscopic device consisting of one-dimensional (1D) quantum wires as injector and detector. We show that non-adiabatic injection of 1D electrons at a conductance of e$^2$/h results in a single first focusing peak, which on gradually increasing the injector conductance up to 2e$^2$/h , pr…
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We present experimental results of transverse electron focusing measurements performed on an n-type GaAs based mesoscopic device consisting of one-dimensional (1D) quantum wires as injector and detector. We show that non-adiabatic injection of 1D electrons at a conductance of e$^2$/h results in a single first focusing peak, which on gradually increasing the injector conductance up to 2e$^2$/h , produces asymmetric two sub-peaks in the first focusing peak, each sub-peak representing the population of spin-state arising from the spatially separated spins in the injector. Further increasing the conductance flips the spin-states in the 1D channel thus reversing the asymmetry in the sub-peaks. On applying a source-drain bias, the spin-gap, so obtained, can be resolved thus providing evidence of exchange interaction induced spin polarisation in the 1D systems.
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Submitted 14 July, 2017;
originally announced July 2017.
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Fano Resonance in a cavity-reflector hybrid system
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
We present the results of transport measurements in a hybrid system consisting of an arch-shaped quantum point contact (QPC) and a reflector; together, they form an electronic cavity in between them. On tuning the arch-QPC and the reflector, asymmetric resonance peak in resistance is observed at the one-dimension to two-dimension transition. Moreover, a dip in resistance near the pinch-off of the…
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We present the results of transport measurements in a hybrid system consisting of an arch-shaped quantum point contact (QPC) and a reflector; together, they form an electronic cavity in between them. On tuning the arch-QPC and the reflector, asymmetric resonance peak in resistance is observed at the one-dimension to two-dimension transition. Moreover, a dip in resistance near the pinch-off of the QPC is found to be strongly dependent on the reflector voltage. These two structures fit very well with the Fano line shape. The Fano resonance was found to get weakened on applying a transverse magnetic field, and it smeared out at 100 mT. In addition, the Fano like shape exhibited a strong temperature dependence and gradually smeared out when the temperature was increased from 1.5 to 20 K. The results might be useful in realising device for quantum information processing.
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Submitted 7 February, 2017;
originally announced February 2017.
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Ultrafast Voltage Sampling using Single-Electron Wavepackets
Authors:
N. Johnson,
J. D. Fletcher,
D. A. Humphreys,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper,
T. J. B. M Janssen,
M. Kataoka
Abstract:
We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact w…
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We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact with the barrier, which can be made as small as a few picoseconds. The value of the instantaneous voltage can be determined by varying the gate voltage to match the barrier height to the electron energy, which is used as a stable reference. The test waveform can be reconstructed by shifting the electron arrival time against it. We argue that this method has scope to increase the bandwidth of voltage sampling to 100 GHz and beyond.
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Submitted 14 October, 2016; v1 submitted 3 October, 2016;
originally announced October 2016.
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Time-of-Flight Measurements of Single-Electron Wave Packets in Quantum-Hall Edge States
Authors:
M. Kataoka,
N. Johnson,
C. Emary,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper,
T. J. B. M. Janssen
Abstract:
We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival ti…
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We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival time, from which the edge-state velocity $v$ is deduced. We find that $v$ follows $1/B$ dependence, in good agreement with the $\vec{E} \times \vec{B}$ drift. The edge potential is estimated from the energy-dependence of $v$ using a harmonic approximation.
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Submitted 9 December, 2015;
originally announced December 2015.
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The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
K. J. Thomas,
F. Sfigakis,
P. See,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantiz…
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We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one dimensional channel (estimated using a saddle point model), and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different length. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.
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Submitted 6 November, 2015; v1 submitted 12 August, 2015;
originally announced August 2015.
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Search-Enhanced Instantaneous Frequency Detection Algorithm: A Preliminary Design
Authors:
Phen Chiak See,
Marta Molinas
Abstract:
This paper presents a method developed for finding sinusoidal components within a nonlinear non-stationary time-series data using Genetic Algorithm (GA) (a global optimization technique). It is called Search-Enhanced Instantaneous Frequency Detection (SEIFD) algorithm. The GA adaptively define the configuration of the components by simulating the solution finding process as a series of genetic evo…
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This paper presents a method developed for finding sinusoidal components within a nonlinear non-stationary time-series data using Genetic Algorithm (GA) (a global optimization technique). It is called Search-Enhanced Instantaneous Frequency Detection (SEIFD) algorithm. The GA adaptively define the configuration of the components by simulating the solution finding process as a series of genetic evolutions. The start-time, end-time, frequency, and phase of each of these components are identified once convergence in the implementation is achieved.
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Submitted 11 July, 2015; v1 submitted 1 May, 2015;
originally announced May 2015.
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Measurement and control of electron wave packets from a single-electron source
Authors:
J. Waldie,
P. See,
V. Kashcheyevs,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
T. J. B. M. Janssen,
M. Kataoka
Abstract:
We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine…
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We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.
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Submitted 22 July, 2015; v1 submitted 24 March, 2015;
originally announced March 2015.
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Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
F. Sfigakis,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
A. R. Hamilton,
M. J. Kelly,
C. G. Smith
Abstract:
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that…
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Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B.
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Submitted 1 June, 2015; v1 submitted 4 March, 2015;
originally announced March 2015.
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Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly
Authors:
L. W. Smith,
H. Al-Taie,
F. Sfigakis,
P. See,
A. A. J. Lesage,
B. Xu,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum…
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The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices.
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Submitted 28 July, 2014;
originally announced July 2014.
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A low-temperature device architecture for the statistical study of electrical characteristics of 256 quantum devices
Authors:
H. Al-Taie,
L. W. Smith,
B. Xu,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the m…
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Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the modification of existing fabrication or experimental set-ups. We demonstrate the operation of the multiplexer by performing electrical measurements of 256 quantum wires formed by split-gate devices using only 19 electrical contacts on a cryogenic set-up. The multiplexer allows the measurement of many devices and enables us to perform statistical analyses of various electrical features which exist in quantum wires. We use this architecture to investigate spatial variations of electrical characteristics, and reproducibility on two separate cooldowns. These statistical analyses are necessary to study device yield and manufacturability, in order for such devices to form the building blocks for the realisation of quantum integrated circuits. The multiplexer provides a scalable architecture which makes a whole series of further investigations into more complex devices possible.
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Submitted 22 July, 2014;
originally announced July 2014.
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Anomalous critical fields in quantum critical superconductors
Authors:
C. Putzke,
P. Walmsley,
J. D. Fletcher,
L. Malone,
D. Vignolles,
C. Proust,
S. Badoux,
P. See,
H. E. Beere,
D. A. Ritchie,
S. Kasahara,
Y. Mizukami,
T. Shibauchi,
Y. Matsuda,
A. Carrington
Abstract:
Fluctuations around an antiferromagnetic quantum critical point (QCP) are believed to lead to unconventional superconductivity and in some cases to high-temperature superconductivity. However, the exact mechanism by which this occurs remains poorly understood. The iron-pnictide superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$ is perhaps the clearest example to date of a high temperature quantum critic…
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Fluctuations around an antiferromagnetic quantum critical point (QCP) are believed to lead to unconventional superconductivity and in some cases to high-temperature superconductivity. However, the exact mechanism by which this occurs remains poorly understood. The iron-pnictide superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$ is perhaps the clearest example to date of a high temperature quantum critical superconductor, and so it is a particularly suitable system in which to study how the quantum critical fluctuations affect the superconducting state. Here we show that the proximity of the QCP yields unexpected anomalies in the superconducting critical fields. We find that both the lower and upper critical fields strongly violate the expectations from the conventional theory taking into account the observed mass enhancement near the QCP. These anomalous behaviours of the critical fields imply that the energy of superconducting vortices is enhanced, possibly due to a microscopic mixing of antiferromagnetism and superconductivity, suggesting that a highly unusual vortex state is realised in quantum critical superconductors.
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Submitted 15 December, 2014; v1 submitted 6 February, 2014;
originally announced February 2014.
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A surface-patterned chip as a strong source of ultra-cold atoms for quantum technologies
Authors:
C. C. Nshii,
M. Vangeleyn,
J. P. Cotter,
P. F. Griffin,
E. A. Hinds,
C. N. Ironside,
P. See,
A. G. Sinclair,
E. Riis,
A. S. Arnold
Abstract:
Laser cooled atoms are central to modern precision measurements. They are also increasingly important as an enabling technology for experimental cavity quantum electrodynamics, quantum information processing and matter wave interferometry. Although significant progress has been made in miniaturising atomic metrological devices, these are limited in accuracy by their use of hot atomic ensembles and…
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Laser cooled atoms are central to modern precision measurements. They are also increasingly important as an enabling technology for experimental cavity quantum electrodynamics, quantum information processing and matter wave interferometry. Although significant progress has been made in miniaturising atomic metrological devices, these are limited in accuracy by their use of hot atomic ensembles and buffer gases. Advances have also been made in producing portable apparatus that benefit from the advantages of atoms in the microKelvin regime. However, simplifying atomic cooling and loading using microfabrication technology has proved difficult. In this letter we address this problem, realising an atom chip that enables the integration of laser cooling and trapping into a compact apparatus. Our source delivers ten thousand times more atoms than previous magneto-optical traps with microfabricated optics and, for the first time, can reach sub-Doppler temperatures. Moreover, the same chip design offers a simple way to form stable optical lattices. These features, combined with the simplicity of fabrication and the ease of operation, make these new traps a key advance in the development of cold-atom technology for high-accuracy, portable measurement devices.
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Submitted 5 November, 2013;
originally announced November 2013.
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Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices
Authors:
H. Al-Taie,
L. W. Smith,
B. Xu,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plate…
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We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.
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Submitted 18 June, 2013;
originally announced June 2013.
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Clock-controlled emission of single-electron wavepackets in a solid-state circuit
Authors:
J. D. Fletcher,
M. Kataoka,
H. Howe,
M. Pepper,
P. See,
S. P. Giblin,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
T. J. B. M. Janssen
Abstract:
We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phon…
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We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we measure the electron energy and wavepacket size at picosecond time scales. We also show how our technique can be used to switch individual electrons into different paths.
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Submitted 20 February, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
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Optimisation of energy and exergy of two-spool turbofan engines using genetic algorithms
Authors:
Vin Cent Tai,
Phen Chiak See,
Cristinel Mares,
Kjetil Uhlen
Abstract:
This paper presents an application of Genetic Algorithm (GA) metaheuristics to optimise the design of two-spool turbofan engines based on exergy and energy theories. The GA is used to seek the optimal values of eight parameters that define the turbofan engine. These parameters are encoded as chromosomes (a metaphor) in GA. A computer program called TurboJet-Engine Optimizer v1.0 (TJEO-1.0) was dev…
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This paper presents an application of Genetic Algorithm (GA) metaheuristics to optimise the design of two-spool turbofan engines based on exergy and energy theories. The GA is used to seek the optimal values of eight parameters that define the turbofan engine. These parameters are encoded as chromosomes (a metaphor) in GA. A computer program called TurboJet-Engine Optimizer v1.0 (TJEO-1.0) was developed by the authors to perform calculations of thermodynamic properties of the engine and implement the optimisations. The caloric properties of the working fluids are obtained by using an 8th-order polynomial fluid model taken from an existing literature. The turbo-mechanical components in the turbofan engine are as well assumed to exhibit polytropic efficiencies of today's technology level. The TJEO-1.0 is integrated with Pyevolve, an open source GA optimisation framework built for used with Python programming language. The optimal design created by TJEO-1.0 was evaluated with the following criteria: (1.) energy efficiency, (2.) exergy efficiency, and (3.) combination of both of them. The results suggest that the design of turbofan engine optimised based on the third criterion is able to produce higher specific thrust (by more than 30 %), compared with the ones optimised based on the first and the second criteria.
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Submitted 3 July, 2012;
originally announced July 2012.
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Enhanced active power filter control for nonlinear non-stationary reactive power compensation
Authors:
Phen Chiak See,
Vin Cent Tai,
Marta Molinas,
Kjetil Uhlen,
Olav Bjarte Fosso
Abstract:
This paper describes a method to implement Reactive Power Compensation (RPC) in power systems that possess nonlinear non-stationary current disturbances. The Empirical Mode Decomposition (EMD) introduced in the Hilbert-Huang Transform (HHT) is used to separate the disturbances from the original current waveform. These disturbances are subsequently removed. Following that, Power Factor Correction (…
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This paper describes a method to implement Reactive Power Compensation (RPC) in power systems that possess nonlinear non-stationary current disturbances. The Empirical Mode Decomposition (EMD) introduced in the Hilbert-Huang Transform (HHT) is used to separate the disturbances from the original current waveform. These disturbances are subsequently removed. Following that, Power Factor Correction (PFC) based on the well-known p-q power theory is conducted to remove the reactive power. Both operations were implemented in a shunt Active Power Filter (APF). The EMD significantly simplifies the singulation and the removal of the current disturbances. This helps to effectively identify the fundamental current waveform. Hence, it simplifies the implementation of RPC on nonlinear non-stationary power systems.
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Submitted 19 June, 2012;
originally announced June 2012.
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Performance assessment of two active power filter control strategies in the presence of non-stationary currents
Authors:
Vin Cent Tai,
Phen Chiak See,
Marta Molinas,
Kjetil Uhlen
Abstract:
This paper describes an active power filter (APF) control strategy, which eliminates harmonics and compensates reactive power in a three-phase four-wire power system supplying non-linear unbalanced loads in the presence of non-linear non-stationary currents. Empirical Mode Decomposition (EMD) technique developed as part of the Hilbert-Huang Transform (HHT) is used to singulate the harmonics and no…
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This paper describes an active power filter (APF) control strategy, which eliminates harmonics and compensates reactive power in a three-phase four-wire power system supplying non-linear unbalanced loads in the presence of non-linear non-stationary currents. Empirical Mode Decomposition (EMD) technique developed as part of the Hilbert-Huang Transform (HHT) is used to singulate the harmonics and non-linear non stationary disturbances from the load currents. The control strategy for the APF is formulated by hybridizing the so called modified p-q theory with the EMD algorithm. A four-leg split-capacitor converter controlled by hysteresis band current controller is used as an APF. The results obtained are compared with those obtained with the conventional modified p-q theory, which does not possess current harmonics or distortions separation strategy, to validate its performance.
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Submitted 7 June, 2012;
originally announced June 2012.
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Towards a quantum representation of the ampere using single electron pumps
Authors:
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie
Abstract:
Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially design…
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Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge.
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Submitted 10 July, 2012; v1 submitted 12 January, 2012;
originally announced January 2012.
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Stabilization of single-electron pumps by high magnetic fields
Authors:
J. D. Fletcher,
M. Kataoka,
S. P. Giblin,
Sunghun Park,
H. -S. Sim,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
H. E. Beere,
D. A. Ritchie
Abstract:
We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabati…
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We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization.
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Submitted 31 August, 2012; v1 submitted 22 July, 2011;
originally announced July 2011.
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Quantum key distribution using a triggered quantum dot source emitting near 1.3 microns
Authors:
P. M. Intallura,
M. B. Ward,
O. Z. Karimov,
Z. L. Yuan,
P. See,
A. J. Shields,
P. Atkinson,
D. A. Ritchie
Abstract:
We report the distribution of a cryptographic key, secure from photon number splitting attacks, over 35 km of optical fiber using single photons from an InAs quantum dot emitting ~1.3 microns in a pillar microcavity. Using below GaAs-bandgap optical excitation, we demonstrate suppression of multiphoton emission to 10% of the Poissonian level without detector dark count subtraction. The source is…
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We report the distribution of a cryptographic key, secure from photon number splitting attacks, over 35 km of optical fiber using single photons from an InAs quantum dot emitting ~1.3 microns in a pillar microcavity. Using below GaAs-bandgap optical excitation, we demonstrate suppression of multiphoton emission to 10% of the Poissonian level without detector dark count subtraction. The source is incorporated into a phase encoded interferometric scheme implementing the BB84 protocol for key distribution over standard telecommunication optical fiber. We show a transmission distance advantage over that possible with (length-optimized) uniform intensity weak coherent pulses at 1310 nm in the same system.
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Submitted 2 October, 2007;
originally announced October 2007.
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Single-photon-emitting diodes: a review
Authors:
A. J. Bennett,
P. Atkinson,
P. See,
M. B. Ward,
R. M. Stevenson,
Z. L. Yuan,
D. C. Unitt,
D. J. P. Ellis,
K. Cooper,
D. A. Ritchie,
A. J. Shields
Abstract:
Compact and reliable sources of non-classical light could find many applications in emerging technologies such as quantum cryptography, quantum imaging and also in fundamental tests of quantum physics. Single self-assembled quantum dots have been widely studied for this reason, but the vast majority of reported work has been limited to optically excited sources. Here we discuss the progress made…
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Compact and reliable sources of non-classical light could find many applications in emerging technologies such as quantum cryptography, quantum imaging and also in fundamental tests of quantum physics. Single self-assembled quantum dots have been widely studied for this reason, but the vast majority of reported work has been limited to optically excited sources. Here we discuss the progress made so far, and prospects for, electrically driven single-photon-emitting diodes (SPEDs).
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Submitted 31 October, 2006;
originally announced October 2006.
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Magnetic-field-induced reduction of the exciton polarization splitting in InAs quantum dots
Authors:
R. M. Stevenson,
R. J. Young,
P. See,
D. G. Gevaux,
K. Cooper,
P. Atkinson,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, a…
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By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, and has enabled the splitting to be tuned to zero within the resolution of our experiments. Observed behaviour allows us to determine g-factors and exchange splittings for different types of dots.
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Submitted 30 January, 2006;
originally announced January 2006.