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Electrochemical doping of graphene
Authors:
A. A. Kaverzin,
S. M. Strawbridge,
A. S. Price,
F. Withers,
A. K. Savchenko,
D. W. Horsell
Abstract:
The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of doping is seen to depend on the magnitude and polarity of…
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The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of doping is seen to depend on the magnitude and polarity of an electric field applied between the graphene and a nearby electrode. This can be understood in terms of an electrochemical reaction mediated by the graphene crystal.
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Submitted 22 October, 2010;
originally announced October 2010.
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Millikelvin de Haas-van Alphen and Magnetotransport studies of Graphite
Authors:
S. B. Hubbard,
T. J. Kershaw,
A. Usher,
A. K. Savchenko,
A. Shytov
Abstract:
Recent studies of the electronic properties of graphite have produced conflicting results regarding the positions of the different carrier types within the Brillouin zone, and the possible presence of Dirac fermions. In this paper we report a comprehensive study of the de Haas-van Alphen, Shubnikov-de Haas and Hall effects in a sample of highly orientated pyrolytic graphite, at temperatures in the…
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Recent studies of the electronic properties of graphite have produced conflicting results regarding the positions of the different carrier types within the Brillouin zone, and the possible presence of Dirac fermions. In this paper we report a comprehensive study of the de Haas-van Alphen, Shubnikov-de Haas and Hall effects in a sample of highly orientated pyrolytic graphite, at temperatures in the range 30 mK to 4 K and magnetic fields up to 12 T. The transport measurements confirm the Brillouin-zone locations of the different carrier types assigned by Schroeder et al.: electrons are at the K-point, and holes are near the H-points. We extract the cyclotron mass and scattering time for both carrier types from the temperature- and magnetic-field-dependences of the magneto-oscillations. Our results indicate that the holes experience stronger scattering and hence have a lower mobility than the electrons. We utilise phase-frequency analysis and intercept analysis of the 1/B positions of magneto-oscillation extrema to identify the nature of the carriers in graphite, whether they are Dirac or normal (Schrodinger) fermions. These analyses indicate normal holes and electrons of indeterminate nature.
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Submitted 15 July, 2010;
originally announced July 2010.
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Electron properties of fluorinated single-layer graphene transistors
Authors:
Freddie Withers,
Marc Dubois,
Alexander K. Savchenko
Abstract:
We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport…
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We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states.
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Submitted 6 September, 2010; v1 submitted 19 May, 2010;
originally announced May 2010.
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Electron-electron interactions in the conductivity of graphene
Authors:
A. A. Kozikov,
A. K. Savchenko,
B. N. Narozhny,
A. V. Shytov
Abstract:
The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to the details of disorder. A new temperature regime of the interaction correction is observed where quantum interference is suppressed by intra-valley scattering. W…
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The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to the details of disorder. A new temperature regime of the interaction correction is observed where quantum interference is suppressed by intra-valley scattering. We determine the value of the interaction parameter, F_0 ~ -0.1, and show that its small value is due to the chiral nature of interacting electrons.
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Submitted 26 May, 2010; v1 submitted 3 April, 2010;
originally announced April 2010.
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Strong nonlinear optical response of graphene flakes measured by four-wave mixing
Authors:
E. Hendry,
P. J. Hale,
J. J. Moger,
A. K. Savchenko,
S. A. Mikhailov
Abstract:
We present the first experimental investigation of nonlinear optical properties of graphene flakes. We find that at near infrared frequencies a graphene monolayer exhibits a remarkably high third-order optical nonlinearity which is practically independent of the wavelengths of incident light. The nonlinear optical response can be utilized for imaging purposes, with image contrasts of graphene wh…
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We present the first experimental investigation of nonlinear optical properties of graphene flakes. We find that at near infrared frequencies a graphene monolayer exhibits a remarkably high third-order optical nonlinearity which is practically independent of the wavelengths of incident light. The nonlinear optical response can be utilized for imaging purposes, with image contrasts of graphene which are orders of magnitude higher than those obtained using linear microscopy.
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Submitted 29 December, 2009;
originally announced December 2009.
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Mesoscopic Fluctuations of Coulomb Drag of Composite Fermions
Authors:
A. S. Price,
A. K. Savchenko,
D. A. Ritchie
Abstract:
We present the first experimental study of mesoscopic fluctuations of Coulomb drag in a system with two layers of composite fermions, which are seen when either the magnetic field or carrier concentration are varied. These fluctuations cause an alternating sign of the average drag. We study these fluctuations at different temperatures to establish the dominant dephasing mechanism of composite fe…
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We present the first experimental study of mesoscopic fluctuations of Coulomb drag in a system with two layers of composite fermions, which are seen when either the magnetic field or carrier concentration are varied. These fluctuations cause an alternating sign of the average drag. We study these fluctuations at different temperatures to establish the dominant dephasing mechanism of composite fermions.
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Submitted 24 December, 2009;
originally announced December 2009.
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Transition between electron localisation and antilocalisation in graphene
Authors:
F. V. Tikhonenko,
A. A. Kozikov,
A. K. Savchenko,
R. V. Gorbachev
Abstract:
The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons which results in electron localisation and therefore a decrease of the conductance. In graphene, where the charge carriers are chiral and have an additional (Ber…
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The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons which results in electron localisation and therefore a decrease of the conductance. In graphene, where the charge carriers are chiral and have an additional (Berry) phase of π, the quantum interference is expected to lead to anti-localisation: an increase of the conductance accompanied by negative magnetoconductance (a decrease of conductance in magnetic field). Here we observe such negative magnetoconductance which is a direct consequence of the chirality of electrons in graphene. We show that graphene is a unique two-dimensional material in that, depending on experimental conditions, it can demonstrate both localisation and anti-localisation effects. We also show that quantum interference in graphene can survive at unusually high temperatures, up to T~200 K.
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Submitted 25 March, 2009;
originally announced March 2009.
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Mesoscopic conductance fluctuations in graphene
Authors:
D. W. Horsell,
A. K. Savchenko,
F. V. Tikhonenko,
K. Kechedzhi,
I. V. Lerner,
V. I. Fal'ko
Abstract:
We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on e…
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We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independent of the details of elastic scattering and can be used to determine the electron temperature of graphene structures.
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Submitted 5 February, 2009;
originally announced February 2009.
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Quantum transport thermometry for electrons in graphene
Authors:
K. Kechedzhi,
D. W. Horsell,
F. V. Tikhonenko,
A. K. Savchenko,
R. V. Gorbachev,
I. V. Lerner,
V. I. Fal'ko
Abstract:
We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_e\approx T$, the bath temperature). The method can be {especially useful} in case of overheating, $T_e>T$. It is based on analysis of the correlation function of mesoscopic conductance fluctuati…
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We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_e\approx T$, the bath temperature). The method can be {especially useful} in case of overheating, $T_e>T$. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that $T_e$ extracted from the correlation function is insensitive to these details.
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Submitted 15 January, 2009; v1 submitted 23 August, 2008;
originally announced August 2008.
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Conductance of p-n-p graphene structures with 'air-bridge' top gates
Authors:
R. V. Gorbachev,
A. S. Mayorov,
A. K. Savchenko,
D. W. Horsell,
F. Guinea
Abstract:
We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density…
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We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.
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Submitted 4 June, 2008; v1 submitted 13 April, 2008;
originally announced April 2008.
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Quantum interference in bilayer graphene
Authors:
R. V. Gorbachev,
F. V. Tikhonenko,
A. S. Mayorov,
D. W. Horsell,
A. K. Savchenko
Abstract:
We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, including those around the electroneutrality region. Unlike conventional 2D systems, weak localisation in bilayer graphene is affected by elastic scatterin…
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We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, including those around the electroneutrality region. Unlike conventional 2D systems, weak localisation in bilayer graphene is affected by elastic scattering processes such as intervalley scattering. Analysis of the dephasing determined from the magnetoconductivity is complemented by a study of the field- and density-dependent fluctuations of the conductance. Good agreement in the value of the coherence length is found between these two studies.
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Submitted 13 August, 2007;
originally announced August 2007.
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Weak localisation in graphene flakes
Authors:
F. V. Tikhonenko,
D. W. Horsell,
R. V. Gorbachev,
A. K. Savchenko
Abstract:
We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking scattering, but also to a number of elastic scattering processes. We study weak localization in different samples and at different carrier densities, including the…
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We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking scattering, but also to a number of elastic scattering processes. We study weak localization in different samples and at different carrier densities, including the Dirac region, and find the characteristic rates that determine it. We show how the shape and quality of graphene flakes affect the values of the elastic and inelastic rates and discuss their physical origin.
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Submitted 11 January, 2008; v1 submitted 1 July, 2007;
originally announced July 2007.
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Giant Fluctuations of Coulomb Drag in a Bilayer System
Authors:
A. S. Price,
A. K. Savchenko,
B. N. Narozhny,
G. Allison,
D. A. Ritchie
Abstract:
We have observed reproducible fluctuations of the Coulomb drag, both as a function of magnetic field and electron concentration, which are a manifestation of quantum interference of electrons in the layers. At low temperatures the fluctuations exceed the average drag, giving rise to random changes of the sign of the drag. The fluctuations are found to be much larger than previously expected, and…
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We have observed reproducible fluctuations of the Coulomb drag, both as a function of magnetic field and electron concentration, which are a manifestation of quantum interference of electrons in the layers. At low temperatures the fluctuations exceed the average drag, giving rise to random changes of the sign of the drag. The fluctuations are found to be much larger than previously expected, and we propose a model which explains their enhancement by considering fluctuations of local electron properties.
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Submitted 10 April, 2007;
originally announced April 2007.
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Weak localisation in bilayer graphene
Authors:
R. V. Gorbachev,
F. V. Tikhonenko,
A. S. Mayorov,
D. W. Horsell,
A. K. Savchenko
Abstract:
We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different carrier densities, including the electro-neutrality region. It is very different, however, from the weak localisation in conventional two-dimensional systems. We s…
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We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different carrier densities, including the electro-neutrality region. It is very different, however, from the weak localisation in conventional two-dimensional systems. We show that it is controlled not only by the dephasing time, but also by different elastic processes that break the effective time-reversal symmetry and provide invervalley scattering.
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Submitted 17 April, 2007; v1 submitted 27 January, 2007;
originally announced January 2007.
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Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition
Authors:
G. D. Allison,
E. A. Galaktionov,
A. K. Savchenko,
S. S. Safonov,
M. M. Fogler,
M. Y. Simmons,
D. A. Ritchie
Abstract:
We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition - a crossover in the sign of dR/dT with changing density. No thermodynamic anomalies have been detected in the crossover region. Instead, despite a ten-fold difference in r_s, the compressibility of both electrons and holes is well described…
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We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition - a crossover in the sign of dR/dT with changing density. No thermodynamic anomalies have been detected in the crossover region. Instead, despite a ten-fold difference in r_s, the compressibility of both electrons and holes is well described by the theory of nonlinear screening of the random potential. We show that the resistivity exhibits a scaling behavior near the percolation threshold found from analysis of the compressibility. Notably, the percolation transition occurs at a much lower density than the crossover.
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Submitted 22 March, 2006;
originally announced March 2006.
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Spontaneous current generation in gated nanostructures
Authors:
D. W. Horsell,
A. K. Savchenko,
Y. M. Galperin,
V. I. Kozub,
V. M. Vinokur,
D. A. Ritchie
Abstract:
We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically…
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We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically distributed impurities in the channel, which leads to the observed current.
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Submitted 24 November, 2004;
originally announced November 2004.
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Shot Noise in Mesoscopic Transport Through Localised States
Authors:
A. K. Savchenko,
S. S. Safonov,
S. H. Roshko,
D. A. Bagrets,
O. N. Jouravlev,
Y. V. Nazarov,
E. H. Linfield,
D. A. Ritchie
Abstract:
We show that shot noise can be used for studies of hopping and resonant tunnelling between localised electron states. In hopping via several states, shot noise is seen to be suppressed compared with its classical Poisson value $S_I=2eI$ ($I$ is the average current) and the suppression depends on the distribution of the barriers between the localised states. In resonant tunnelling through a singl…
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We show that shot noise can be used for studies of hopping and resonant tunnelling between localised electron states. In hopping via several states, shot noise is seen to be suppressed compared with its classical Poisson value $S_I=2eI$ ($I$ is the average current) and the suppression depends on the distribution of the barriers between the localised states. In resonant tunnelling through a single impurity an enhancement of shot noise is observed. It has been established, both theoretically and experimentally, that a considerable increase of noise occurs due to Coulomb interaction between two resonant tunnelling channels.
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Submitted 4 February, 2004;
originally announced February 2004.
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Interactions in high-mobility 2D electron and hole systems
Authors:
E. A. Galaktionov,
A. K. Savchenko,
S. S. Safonov,
Y. Y. Proskuryakov,
L. Li,
M. Pepper,
M. Y. Simmons,
D. A. Ritchie,
E. H. Linfield,
Z. D. Kvon
Abstract:
Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BTτ/\hbar $ changes from 0.1 to 10 ($τ$ is the momentum relaxation time). This range corresponds to the \textit{intermediate} and \textit {ballistic} regimes where only a few impurities are involved in electron-electron interactions. The in…
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Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BTτ/\hbar $ changes from 0.1 to 10 ($τ$ is the momentum relaxation time). This range corresponds to the \textit{intermediate} and \textit {ballistic} regimes where only a few impurities are involved in electron-electron interactions. The interaction correction to the Drude conductivity is detected in the temperature dependence of the resistance and in the magnetoresistance in parallel and perpendicular magnetic fields. The effects are analysed in terms of the recent theories of electron interactions developed for the ballistic regime. It is shown that the character of the fluctuation potential (short-range or long-range) is an important factor in the manifestation of electron-electron interactions in high-mobility 2D systems.
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Submitted 4 February, 2004;
originally announced February 2004.
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Enhanced shot noise in resonant tunnelling via interacting localised states
Authors:
S. S. Safonov,
A. K. Savchenko,
D. A. Bagrets,
O. N. Jouravlev,
Y. V. Nazarov,
E. H. Linfield,
D. A. Ritchie
Abstract:
In a variety of mesoscopic systems shot noise is seen to be suppressed in comparison with its Poisson value. In this work we observe a considerable enhancement of shot noise in the case of resonant tunnelling via localised states. We present a model of correlated transport through two localised states which provides both a qualitative and quantitative description of this effect.
In a variety of mesoscopic systems shot noise is seen to be suppressed in comparison with its Poisson value. In this work we observe a considerable enhancement of shot noise in the case of resonant tunnelling via localised states. We present a model of correlated transport through two localised states which provides both a qualitative and quantitative description of this effect.
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Submitted 3 March, 2003;
originally announced March 2003.
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Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface
Authors:
Y. Y. Proskuryakov,
Z. D. Kvon,
A. K. Savchenko
Abstract:
In this work we have studied the parallel magnetoresistance of a 2DEG near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to $B = 15$ T, which we explain by the effect of spin olarization on impurity scattering. This linear magnetoresistance shows strong anomalies near the boundaries of the minigap in the electron spectrum of the vicinal system.
In this work we have studied the parallel magnetoresistance of a 2DEG near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to $B = 15$ T, which we explain by the effect of spin olarization on impurity scattering. This linear magnetoresistance shows strong anomalies near the boundaries of the minigap in the electron spectrum of the vicinal system.
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Submitted 23 September, 2003; v1 submitted 29 January, 2003;
originally announced January 2003.
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Anomalous state of a 2DEG in vicinal Si MOSFET in high magnetic fields
Authors:
Z. D. Kvon,
Y. Y. Proskuryakov,
A. K. Savchenko
Abstract:
We report the observation of an anomalous state of a 2D electron gas near a vicinal surface of a silicon MOSFET in high magnetic fields. It is characterised by unusual behaviour of the conductivities $σ_{xx}$ and $σ_{xy}$, which can be described as a collapse of the Zeeman spin splitting accompanied by a large peak in $σ_{xx}$ and an anomalous peak in $ σ_{xy}$. It occurs at densities correspond…
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We report the observation of an anomalous state of a 2D electron gas near a vicinal surface of a silicon MOSFET in high magnetic fields. It is characterised by unusual behaviour of the conductivities $σ_{xx}$ and $σ_{xy}$, which can be described as a collapse of the Zeeman spin splitting accompanied by a large peak in $σ_{xx}$ and an anomalous peak in $ σ_{xy}$. It occurs at densities corresponding to the position of the Fermi level above the onset of the superlattice mini-gap inherent to the vicinal system. The range of fields and densities where this effect exists has been determined, and it has been shown that it is suppressed by parallel magnetic fields.
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Submitted 14 January, 2003;
originally announced January 2003.
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Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime
Authors:
L. Li,
Y. Y. Proskuryakov,
A. K. Savchenko,
E. H. Linfield,
D. A. Ritchie
Abstract:
On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega_{c} tau > 1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k_{B} T tau / hbar ~ 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity delt…
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On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega_{c} tau > 1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k_{B} T tau / hbar ~ 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity delta sigma_{xx}^{ee}(T) is obtained in the situation of a long-range fluctuation potential and strong magnetic field. The results are compared with predictions of the new theory of interaction-induced magnetoresistance.
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Submitted 27 July, 2002;
originally announced July 2002.
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Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime
Authors:
Y. Y. Proskuryakov,
A. K. Savchenko,
S. S. Safonov,
M. Pepper,
M. Y. Simmons,
D. A. Ritchie
Abstract:
On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTτ/\hbar $ $>1$. It is shown that the 'metallic' behaviour of the resistivity ($dρ/dT>0$) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the cond…
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On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTτ/\hbar $ $>1$. It is shown that the 'metallic' behaviour of the resistivity ($dρ/dT>0$) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant $F_0^σ$ which controls the sign of $dρ/dT$.
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Submitted 14 September, 2001;
originally announced September 2001.
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Modulation origin of 1/f noise in two-dimensional hopping
Authors:
V. Pokrovskii,
A. K. Savchenko,
W. R. Tribe,
E. H. Linfield
Abstract:
We show that 1/f noise in a two-dimensional electron gas with hopping conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the critical hopping network, which is varied by changing electron concentration, sample size and temperature. With increasing temperature, it clearly reveals the cross…
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We show that 1/f noise in a two-dimensional electron gas with hopping conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the critical hopping network, which is varied by changing electron concentration, sample size and temperature. With increasing temperature, it clearly reveals the crossover between different hopping regimes.
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Submitted 12 September, 2001;
originally announced September 2001.
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Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s
Authors:
Y. Y. Proskuryakov,
A. K. Savchenko,
S. S. Safonov,
M. Pepper,
M. Y. Simmons,
D. A. Ritchie
Abstract:
We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, at r_s as large as 29, negative magnetoresistance does exist and is well described by weak localisation. The dephasing time extracted from the magnetoresistance is dominated by the T^2 -term due to Landau scattering in…
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We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, at r_s as large as 29, negative magnetoresistance does exist and is well described by weak localisation. The dephasing time extracted from the magnetoresistance is dominated by the T^2 -term due to Landau scattering in the clean limit. The effect of hole-hole interactions, however, is suppressed when compared with the theory for small r_s.
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Submitted 12 January, 2001;
originally announced January 2001.
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Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs
Authors:
S. S. Safonov,
S. H. Roshko,
A. K. Savchenko,
A. G. Pogosov,
Z. D. Kvon
Abstract:
The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the insulator with dR/dT<0 to the metal with dR/dT>0 occurs at a low resistance of R_{\Box}^c \sim 0.04h/e^2. At the low-temperature transition, which we attribute to…
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The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the insulator with dR/dT<0 to the metal with dR/dT>0 occurs at a low resistance of R_{\Box}^c \sim 0.04h/e^2. At the low-temperature transition, which we attribute to the existence of a narrow impurity band at the interface, a distinct hysteresis in the resistance is detected. At higher temperatures, another change in the sign of dR/dT is seen and related to the crossover from the degenerate to non-degenerate 2DEG.
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Submitted 4 March, 2000;
originally announced March 2000.
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Enhanced fluctuations of the tunneling density of states near bottoms of Landau bands measured by a local spectrometer
Authors:
J. P. Holder,
A. K. Savchenko,
Vladimir I. Fal'ko,
B. Jouault,
G. Faini,
F. Laruelle,
E. Bedel
Abstract:
We have found that the local density of states fluctuations (LDOSF) in a disordered metal, detected using an impurity in the barrier as a spectrometer, undergo enhanced (with respect to SdH and dHvA effects) oscillations in strong magnetic fields, omega _cτ> 1. We attribute this to the dominant role of the states near bottoms of Landau bands which give the major contribution to the LDOSF and are…
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We have found that the local density of states fluctuations (LDOSF) in a disordered metal, detected using an impurity in the barrier as a spectrometer, undergo enhanced (with respect to SdH and dHvA effects) oscillations in strong magnetic fields, omega _cτ> 1. We attribute this to the dominant role of the states near bottoms of Landau bands which give the major contribution to the LDOSF and are most strongly affected by disorder. We also demonstrate that in intermediate fields the LDOSF increase with B in accordance with the results obtained in the diffusion approximation.
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Submitted 1 July, 1999;
originally announced July 1999.
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Effect of the angular momentum on the magnitude of the current in magneto-tunnelling spectroscopy of quantum dots
Authors:
B. Jouault,
J. P. Holder,
M. Boero,
G. Faini,
F. Laruelle,
E. Bedel,
A. K. Savchenko,
J. C. Inkson
Abstract:
We present an experimental and theoretical study of electron tunnelling through quantum dots which focusses the attention on the amplitude of the current peaks as a function of magnetic field. We demonstrate that the amplitudes of the current peaks in the tunnelling spectra show a dramatically different behaviour as a function of the magnetic field, depending on the angular momentum of the dot s…
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We present an experimental and theoretical study of electron tunnelling through quantum dots which focusses the attention on the amplitude of the current peaks as a function of magnetic field. We demonstrate that the amplitudes of the current peaks in the tunnelling spectra show a dramatically different behaviour as a function of the magnetic field, depending on the angular momentum of the dot state through which tunnelling occurs. This is seen in the non-monotonic behaviour of the current amplitude in magnetic field. Furthermore, the magnetic field severely hinders tunnelling through states with angular momentum parallel to the field, and in some cases it makes it altogether impossible. This type of investigation allows us to directly probe the details of the confined wave functions of the quantum dot.
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Submitted 3 September, 1998; v1 submitted 19 March, 1998;
originally announced March 1998.
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Resonant Tunneling Spectroscopy of Interacting Localised States -- Observation of the Correlated Current Through Two Impurities
Authors:
V. V. Kuznetsov,
A. K. Savchenko,
D. R. Mace,
E. H. Linfield,
D. A. Ritchie
Abstract:
We study effects of Coulomb interactions between localised states in a potential barrier by measuring resonant-tunneling spectra with a small bias applied along the barrier. In the ohmic regime the conductance of 0.2um--gate lateral GaAs microstructures shows distinct peaks associated with individual localised states. However, when an electric field is applied new states start contributing to th…
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We study effects of Coulomb interactions between localised states in a potential barrier by measuring resonant-tunneling spectra with a small bias applied along the barrier. In the ohmic regime the conductance of 0.2um--gate lateral GaAs microstructures shows distinct peaks associated with individual localised states. However, when an electric field is applied new states start contributing to the current, which becomes a correlated electron flow through two interacting localised states. Several situations of such correlations have been observed, and the conclusions are confirmed by calculations.
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Submitted 2 November, 1997;
originally announced November 1997.
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Metal-insulator transition at B=0 in an ultra-low density ($r_{s}=23$) two dimensional GaAs/AlGaAs hole gas
Authors:
M. Y. Simmons,
A. R. Hamilton,
T. G. Griffiths,
A. K. Savchenko,
M. Pepper,
D. A. Ritchie
Abstract:
We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in thi…
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We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in this sample are highlighted by the observation of re-entrant metal insulator transitions in both the fractional ($ν< 1/3$) and integer ($2 > ν> 1$) quantum Hall regimes. On reducing the carrier density the temperature and electric field dependence of the resistivity show that the sample is still metallic at $p_{s}=1.3x10^{10} cm^{-2}$ ($r_{s}=21$), becoming insulating at $p_{s}{\simeq}1x10^{10} cm^{-2}$. Our results indicate that electron-electron interactions are dominant at these low densities, pointing to the many body origins of this metal-insulator transition. We note that the value of $r_{s}$ at the transition ($r_{s}=23 +/- 2$) is large enough to allow the formation of a weakly pinned Wigner crystal, and is approaching the value calculated for the condensation of a pure Wigner crystal.
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Submitted 12 October, 1997;
originally announced October 1997.
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Distribution Function Analysis of Mesoscopic Hopping Conductance Fluctuations
Authors:
R. J. F. Hughes,
A. K. Savchenko,
J. E. F. Frost,
E. H. Linfield,
J. T. Nicholls,
M. Pepper,
E. Kogan,
M. Kaveh
Abstract:
Variable-range hopping (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the me…
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Variable-range hopping (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the mean square fluctuation size with temperature in wires fabricated from both materials is found to be described quantitatively by Lee's model of VRH along a 1D chain. Armed with this quantitative validation of the VRH model, the DF method is applied to the problem of magnetoconductance in the insulating regime. Here a non-monotonic variation of the magnetoconductance is observed in Si MOSFETS whose sign at low magnetic fields is dependent on the channel geometry. The origin of this defect is discussed within the framework of the interference model of VRH magnetoconductance in terms of narrowing of the DF in a magnetic field.
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Submitted 25 April, 1996; v1 submitted 8 March, 1996;
originally announced March 1996.
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Re-entrant resonant tunneling
Authors:
V. V. Kuznetsov,
A. K. Savchenko,
M. E. Raikh,
L. I. Glazman,
D. R. Mace,
D. A. Ritchie,
E. H. Linfield
Abstract:
We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state can give rise to two resonant peaks in the conductance as a function of gate voltage, G(Vg). We also demonstrate that an additional higher-order resonance wi…
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We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state can give rise to two resonant peaks in the conductance as a function of gate voltage, G(Vg). We also demonstrate that an additional higher-order resonance with Vg-position in between these two peaks becomes possibile when interactions are taken into account. The corresponding resonant-tunneling process involves two-electron transitions. We have observed both these effects in GaAs transistor microstructures by studying the time evolution of three adjacent G(Vg) peaks caused by fluctuating occupation of an isolated impurity (modulator). The heights of the two stronger peaks exibit in-phase fluctuations. The phase of fluctuations of the smaller middle peak is opposite. The two stronger peaks have their origin in the same localized state, and the third one corresponds to a co-tunneling process.
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Submitted 1 March, 1996;
originally announced March 1996.