-
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Authors:
Thai-Son Nguyen,
Naomi Pieczulewsi,
Chandrashekhar Savant,
Joshua J. P. Cooper,
Joseph Casamento,
Rachel S. Goldman,
David A. Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surface or interface through growth. This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostru…
▽ More
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surface or interface through growth. This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostructures. Single layer Al$_{1-x}$Sc$_x$N/GaN heterostructures exhibited lattice-matched composition within $x$ = 0.09 -- 0.11 using substrate (thermocouple) growth temperatures between 330 $ ^\circ$C and 630 $ ^\circ$C. By targeting the lattice-matched Sc composition, pseudomorphic AlScN/GaN multilayer structures with ten and twenty periods were achieved, exhibiting excellent structural and interface properties as confirmed by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). These multilayer heterostructures exhibited substantial polarization-induced net mobile charge densities of up to 8.24 $\times$ 10$^{14}$/cm$^2$ for twenty channels. The sheet density scales with the number of AlScN/GaN periods. By identifying lattice-matched growth condition and using it to generate multiple conductive channels, this work enhances our understanding of the AlScN/GaN material platform.
△ Less
Submitted 11 October, 2024;
originally announced October 2024.
-
Ferroelectric AlBN Films by Molecular Beam Epitaxy
Authors:
Chandrashekhar Savant,
Ved Gund,
Kazuki Nomoto,
Takuya Maeda,
Shubham Jadhav,
Joongwon Lee,
Madhav Ramesh,
Eungkyun Kim,
Thai-Son Nguyen,
Yu-Hsin Chen,
Joseph Casamento,
Farhan Rana,
Amit Lal,
Huili,
Xing,
Debdeep Jena
Abstract:
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in t…
▽ More
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.
△ Less
Submitted 17 July, 2024; v1 submitted 12 July, 2024;
originally announced July 2024.
-
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
Authors:
J. Casamento,
K. Nomoto,
T. S. Nguyen,
H. Lee,
C. Savant,
L. Li,
A. Hickman,
T. Maeda,
J. Encomendero,
V. Gund,
A. Lal,
J. C. M. Hwang,
H. G. Xing,
D. Jena
Abstract:
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high…
▽ More
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics.
△ Less
Submitted 27 February, 2023;
originally announced February 2023.
