Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity
Authors:
Zeyu Chi,
Corinne Sartel,
Yunlin Zheng,
Sushrut Modak,
Leonid Chernyak,
Christian M Schaefer,
Jessica Padilla,
Jose Santiso,
Arie Ruzin,
Anne-Marie Goncalves,
Jurgen von Bardeleben,
Gerard Guillot,
Yves Dumont,
Amador Perez-Tomas,
Ekaterine Chikoidze
Abstract:
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperatu…
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The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperature. A low activation energy of conductivity as Ea2=170 meV was determined, associated to the oxygen - gallium native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV.
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Submitted 1 June, 2023;
originally announced June 2023.
Characterisations of ohmic and Schottky contacts of a single ZnO nanowire
Authors:
B. Bercu,
W. Geng,
O. Simonetti,
S. Kostcheev,
C. Sartel,
V. Sallet,
G. Lérondel,
M. Molinari,
L. Giraudet,
C Couteau
Abstract:
Current voltage and Kelvin Probe Force Microscopy (KPFM) measurements were performed on single ZnO nanowires. Measurements are shown to be strongly correlated with the contact behavior, either ohmic or Schottky. The ZnO nanowires were obtained by metallo-organic chemical vapor deposition (MOCVD) and contacted using electronic-beam lithography. Depending on the contact geometry, good quality ohmic…
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Current voltage and Kelvin Probe Force Microscopy (KPFM) measurements were performed on single ZnO nanowires. Measurements are shown to be strongly correlated with the contact behavior, either ohmic or Schottky. The ZnO nanowires were obtained by metallo-organic chemical vapor deposition (MOCVD) and contacted using electronic-beam lithography. Depending on the contact geometry, good quality ohmic contacts (linear I V behavior) or non-linear (diode like) Schottky contacts were obtained. Current voltage and KPFM measurements on both types of contacted ZnO nanowires were performed in order to investigate their behavior. A clear correlation could be established between the I V curve, the electrical potential profile along the device and the nanowire geometry. Some arguments supporting this behavior are given based on a depleted region extension. This work will help to better understand the electrical behavior of ohmic contacts on single ZnO nanowires, for future applications in nanoscale field effect-transistors and nano-photodetectors.
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Submitted 22 December, 2015;
originally announced December 2015.
