Showing 1–45 of 45 results for author: Saraswat, K

Exceptional Reduction of Electrical Resistivity in Ultrathin Non-Crystalline NbP Semimetal

Authors: Asir Intisar Khan, Akash Ramdas, Emily Lindgren, Hyun-Mi Kim, Byoungjun Won, Xiangjin Wu, Krishna Saraswat, Ching-Tzu Chen, Yuri Suzuki, Felipe H. da Jornada, Il-Kwon Oh, Eric Pop

Abstract: The electrical resistivity of conventional metals, such as copper, is known to increase in thinner films due to electron-surface scattering, limiting the performance of metals in nanoscale electronics. Here, we uncover an exceptional reduction of resistivity with decreasing film thickness in NbP semimetal, deposited at relatively low temperatures of 400 °C. In sub-5 nm thin films, we find a signif… ▽ More The electrical resistivity of conventional metals, such as copper, is known to increase in thinner films due to electron-surface scattering, limiting the performance of metals in nanoscale electronics. Here, we uncover an exceptional reduction of resistivity with decreasing film thickness in NbP semimetal, deposited at relatively low temperatures of 400 °C. In sub-5 nm thin films, we find a significantly lower resistivity (~34 microOhm.cm for 1.5 nm thin NbP, at room temperature) than in the bulk form, and lower than conventional metals at similar thickness. Remarkably, the NbP films are not crystalline, but display local nanocrystalline, short-range order within an amorphous matrix. Our analysis suggests that the lower resistivity is due to conduction through surface channels, together with high surface carrier density and sufficiently good mobility, as the film thickness is reduced. These results and the fundamental insights obtained here could enable ultrathin, low-resistivity wires for nanoelectronics, beyond the limitations of conventional metals. △ Less

Submitted 27 September, 2024; v1 submitted 25 September, 2024; originally announced September 2024.

Phenomenological study of the charged particles production in pPb collisions at $\sqrt{s_{\rm{NN}}}$ = 5.02 TeV

Authors: Kapil Saraswat, Deependra Singh Rawat, Akash Pandey, Venktesh Singh, H. C. Chandola

Abstract: We have studied transverse momentum ($p_{\rm{T}}$) spectra of charged hadrons in various pseudo-rapidity ranges for p-Pb collisions at $\sqrt{s_{\rm{NN}}}$ = 5.02 TeV. The medium effects such as collective flow and energy loss resulting from heavy-ion collisions have also been investigated using modified Tsallis distribution function over a wide range of $p_{\rm{T}}$ that indicates the transverse… ▽ More We have studied transverse momentum ($p_{\rm{T}}$) spectra of charged hadrons in various pseudo-rapidity ranges for p-Pb collisions at $\sqrt{s_{\rm{NN}}}$ = 5.02 TeV. The medium effects such as collective flow and energy loss resulting from heavy-ion collisions have also been investigated using modified Tsallis distribution function over a wide range of $p_{\rm{T}}$ that indicates the transverse collective flow at low and intermediate $p_{\rm{T}}$ range and in-medium energy loss in high $p_{\rm{T}}$ range. △ Less

Submitted 19 July, 2024; originally announced July 2024.

Comments: arXiv admin note: substantial text overlap with arXiv:2405.12231

Medium effects of charged-hadron production in $p+Pb$ and $Pb+Pb$ collisions at LHC energies using modified Tsallis distribution

Authors: Kapil Saraswat, Prashanta Kumar Khandai, Deependra Singh Rawat, Venktesh Singh

Abstract: The transverse momentum ($p_T$) spectra of charged hadrons in $p+p$, $p+Pb$ and $Pb+Pb$ collisions at $\sqrt {s_{NN}} = 5.02$ TeV are presented here within the rapidity range of $-2.5<y<2.0$. We study the medium effects, which is produced by heavy ion collisions, on the behaviour of charged hadrons, by using a phenomenological fit function. These effects are attributed to two main factors: the tra… ▽ More The transverse momentum ($p_T$) spectra of charged hadrons in $p+p$, $p+Pb$ and $Pb+Pb$ collisions at $\sqrt {s_{NN}} = 5.02$ TeV are presented here within the rapidity range of $-2.5<y<2.0$. We study the medium effects, which is produced by heavy ion collisions, on the behaviour of charged hadrons, by using a phenomenological fit function. These effects are attributed to two main factors: the transverse collective flow and the the energy loss of charged hadrons due to multiple scatterings. We observe the transverse collective flow at low and intermediate $p_T$ region and the energy loss at high $p_T$ region. Here we take all the published data from the ATLAS collaboration. △ Less

Submitted 6 June, 2024; v1 submitted 11 May, 2024; originally announced May 2024.

Comments: arXiv admin note: substantial text overlap with arXiv:1706.04860

CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors

Authors: Marc Jaikissoon, Çağıl Köroğlu, Jerry A. Yang, Kathryn M. Neilson, Krishna C. Saraswat, Eric Pop

Abstract: Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a CMOS (complementary metal oxide semiconductor) compatible manner would radically improve the industrial viability of 2D transistors. Here, we show silicon nit… ▽ More Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a CMOS (complementary metal oxide semiconductor) compatible manner would radically improve the industrial viability of 2D transistors. Here, we show silicon nitride capping layers can impart strain to monolayer MoS2 transistors on conventional silicon substrates, enhancing their electrical performance with a low thermal budget (350 °C), CMOS-compatible approach. Strained back-gated and dual-gated MoS2 transistors demonstrate median increases up to 60% and 45% in on-state current, respectively. The greatest improvements are found when both transistor channels and contacts are reduced to ~200 nm, reaching saturation currents of 488 uA/um, higher than any previous reports at such short contact pitch. Simulations reveal that most benefits arise from tensile strain lowering the contact Schottky barriers, and that further reducing device dimensions (including contacts) will continue to offer increased strain and performance improvements. △ Less

Submitted 29 June, 2024; v1 submitted 15 May, 2024; originally announced May 2024.

Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization

Authors: Kathryn M. Neilson, Sarallah Hamtaei, Koosha Nassiri Nazif, Joshua M. Carr, Sepideh Rahimisheikh, Frederick U. Nitta, Guy Brammertz, Jeffrey L. Blackburn, Joke Hadermann, Krishna C. Saraswat, Obadiah G. Reid, Bart Vermang, Alwin Daus, Eric Pop

Abstract: Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells are fabricated in a non-scalable fashion using exfoliated materials due to the absence of high-quality, large-area, multilayer TMDs. Here… ▽ More Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells are fabricated in a non-scalable fashion using exfoliated materials due to the absence of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer tungsten diselenide (WSe$_{2}$) films by selenizing pre-patterned tungsten with either solid source selenium or H$_{2}$Se precursors, which leads to smooth, wafer-scale WSe$_{2}$ films with a layered van der Waals structure. The films have charge carrier lifetimes up to 144 ns, over 14x higher than large-area TMD films previously demonstrated. Such high carrier lifetimes correspond to power conversion efficiency of ~22% and specific power of ~64 W g$^{-1}$ in a packaged solar cell, or ~3 W g$^{-1}$ in a fully-packaged solar module. This paves the way for the mass-production of high-efficiency multilayer WSe$_{2}$ solar cells at low cost. △ Less

Submitted 13 February, 2024; originally announced February 2024.

Efficiency Limit of Transition Metal Dichalcogenide Solar Cells

Authors: Koosha Nassiri Nazif, Frederick U. Nitta, Alwin Daus, Krishna C. Saraswat, Eric Pop

Abstract: Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD solar cells remain unknown today. Here, we establish the efficiency limits of multilayer MoS2, MoSe2, WS2, and WSe2 s… ▽ More Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD solar cells remain unknown today. Here, we establish the efficiency limits of multilayer MoS2, MoSe2, WS2, and WSe2 solar cells under AM 1.5 G illumination as a function of TMD film thickness and material quality. We use an extended version of the detailed balance method which includes Auger and defect-assisted Shockley-Reed-Hall recombination mechanisms in addition to radiative losses, calculated from measured optical absorption spectra. We demonstrate that single-junction solar cells with TMD films as thin as 50 nm could in practice achieve up to 25% power conversion efficiency with the currently available material quality, making them an excellent choice for high-specific-power photovoltaics. △ Less

Submitted 24 July, 2023; originally announced July 2023.

Comments: 24 pages

Journal ref: Commun Phys 6, 367 (2023)

Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale

Authors: Joel Martis, Sandhya Susarla, Archith Rayabharam, Cong Su, Timothy Paule, Philipp Pelz, Cassandra Huff, Xintong Xu, Hao-Kun Li, Marc Jaikissoon, Victoria Chen, Eric Pop, Krishna Saraswat, Alex Zettl, Narayana R. Aluru, Ramamoorthy Ramesh, Peter Ercius, Arun Majumdar

Abstract: Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously… ▽ More Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the electron charge density in monolayer MoS2. We find that both the core electrons and the valence electrons contribute to the derived electron charge density. However, due to blurring by the probe shape, the valence electron contribution forms a nearly featureless background while most of the spatial modulation comes from the core electrons. Our findings highlight the importance of probe shape in interpreting charge densities derived from 4D STEM. △ Less

Submitted 31 July, 2023; v1 submitted 17 October, 2022; originally announced October 2022.

Journal ref: Nature Communications 14(1) (2023) 1-8

Constraints on Sub-GeV Dark Matter--Electron Scattering from the CDEX-10 Experiment

Authors: Z. Y. Zhang, L. T. Yang, Q. Yue, K. J. Kang, Y. J. Li, M. Agartioglu, H. P. An, J. P. Chang, Y. H. Chen, J. P. Cheng, W. H. Dai, Z. Deng, C. H. Fang, X. P. Geng, H. Gong, Q. J. Guo, X. Y. Guo, L. He, S. M. He, J. W. Hu, H. X. Huang, T. C. Huang, H. T. Jia, X. Jiang, H. B. Li , et al. (60 additional authors not shown)

Abstract: We present improved germanium-based constraints on sub-GeV dark matter via dark matter--electron ($χ$-$e$) scattering using the 205.4 kg$\cdot$day dataset from the CDEX-10 experiment. Using a novel calculation technique, we attain predicted $χ$-$e$ scattering spectra observable in high-purity germanium detectors. In the heavy mediator scenario, our results achieve 3 orders of magnitude of improvem… ▽ More We present improved germanium-based constraints on sub-GeV dark matter via dark matter--electron ($χ$-$e$) scattering using the 205.4 kg$\cdot$day dataset from the CDEX-10 experiment. Using a novel calculation technique, we attain predicted $χ$-$e$ scattering spectra observable in high-purity germanium detectors. In the heavy mediator scenario, our results achieve 3 orders of magnitude of improvement for $m_χ$ larger than 80 MeV/c$^2$ compared to previous germanium-based $χ$-$e$ results. We also present the most stringent $χ$-$e$ cross-section limit to date among experiments using solid-state detectors for $m_χ$ larger than 90 MeV/c$^2$ with heavy mediators and $m_χ$ larger than 100 MeV/c$^2$ with electric dipole coupling. The result proves the feasibility and demonstrates the vast potential of a new $χ$-$e$ detection method with high-purity germanium detectors in ultralow radioactive background. △ Less

Submitted 21 November, 2022; v1 submitted 8 June, 2022; originally announced June 2022.

Comments: 6 pages, 3 figures. Version updated to match PRL version

Journal ref: Phys. Rev. Lett. 129, 221301 (2022)

Search for Neutrinoless Double-Beta Decay of $^{76}$Ge with a Natural Broad Energy Germanium Detector

Authors: CDEX collaboration, W. H. Dai, H. Ma, Q. Yue, Z. She, K. J. Kang, Y. J. Li, M. Agartioglu, H. P. An, J. P. Chang, Y. H. Chen, J. P. Cheng, Z. Deng, C. H. Fang, X. P. Geng, H. Gong, Q. J. Guo, X. Y. Guo, L. He, S. M. He, J. W. Hu, H. X. Huang, T. C. Huang, H. T. Jia, X. Jiang , et al. (61 additional authors not shown)

Abstract: A natural broad energy germanium (BEGe) detector is operated in the China Jinping Underground Laboratory (CJPL) for a feasibility study of building the next generation experiment of the neutrinoless double-beta (0{$νββ$}) decay of $^{76}$Ge. The setup of the prototype facility, characteristics of the BEGe detector, background reduction methods, and data analysis are described in this paper. A back… ▽ More A natural broad energy germanium (BEGe) detector is operated in the China Jinping Underground Laboratory (CJPL) for a feasibility study of building the next generation experiment of the neutrinoless double-beta (0{$νββ$}) decay of $^{76}$Ge. The setup of the prototype facility, characteristics of the BEGe detector, background reduction methods, and data analysis are described in this paper. A background index of 6.4$\times$10$^{-3}$ counts/(keV$\cdot$kg$\cdot$day) is achieved and 1.86 times lower than our previous result of the CDEX-1 detector. No signal is observed with an exposure of 186.4 kg$\cdot$day, thus a limit on the half life of $^{76}$Ge 0$νββ$ decay is set at T$_{1/2}^{0ν}$ $>$ 5.62$\times$10$^{22}$ yr at 90% C.L.. The limit corresponds to an effective Majorana neutrino mass in the range of 4.6 $\sim$ 10.3 eV, dependent on the nuclear matrix elements. △ Less

Submitted 5 August, 2022; v1 submitted 21 May, 2022; originally announced May 2022.

Comments: 10 pages, 15 figures

Journal ref: Physical Review D 106, 032012 (2022)

Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier

Authors: Raisul Islam, Shengjun Qin, Sanchit Deshmukh, Zhouchangwan Yu, Cagil Koroglu, Asir Intisar Khan, Kirstin Schauble, Krishna C. Saraswat, Eric Pop, H. -S. Philip Wong

Abstract: Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between… ▽ More Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Constraints on sub-GeV dark matter boosted by cosmic rays from the CDEX-10 experiment at the China Jinping Underground Laboratory

Authors: R. Xu, L. T. Yang, Q. Yue, K. J. Kang, Y. J. Li, M. Agartioglu, H. P. An, J. P. Chang, Y. H. Chen, J. P. Cheng, W. H. Dai, Z. Deng, C. H. Fang, X. P. Geng, H. Gong, X. Y. Guo, Q. J. Guo, L. He, S. M. He, J. W. Hu, H. X. Huang, T. C. Huang, H. T. Jia, X. Jiang, H. B. Li , et al. (60 additional authors not shown)

Abstract: We present new constraints on light dark matter boosted by cosmic rays (CRDM) using the 205.4 kg day data of the CDEX-10 experiment conducted at the China Jinping Underground Laboratory. The Monte Carlo simulation package CJPL\_ESS was employed to evaluate the Earth shielding effect. Several key factors have been introduced and discussed in our CRDM analysis, including the contributions from heavi… ▽ More We present new constraints on light dark matter boosted by cosmic rays (CRDM) using the 205.4 kg day data of the CDEX-10 experiment conducted at the China Jinping Underground Laboratory. The Monte Carlo simulation package CJPL\_ESS was employed to evaluate the Earth shielding effect. Several key factors have been introduced and discussed in our CRDM analysis, including the contributions from heavier CR nuclei than proton and helium, the inhomogeneity of CR distribution, and the impact of the form factor in the Earth attenuation calculation. Our result excludes the dark matter--nucleon elastic scattering cross-section region from $1.7\times 10^{-30}$ to $10^{-26}~\rm cm^2$ for dark matter of 10 keV$/c^2$ to 1 GeV$/c^2$. △ Less

Submitted 16 September, 2022; v1 submitted 5 January, 2022; originally announced January 2022.

Comments: 9 pages, 7 figures. Version updated to match PRD version

Journal ref: Phys. Rev. D 106, 052008 (2022)

Studies of the Earth shielding effect to direct dark matter searches at the China Jinping Underground Laboratory

Authors: Z. Z. Liu, L. T. Yang, Q. Yue, C. H. Yeh, K. J. Kang, Y. J. Li, M. Agartioglu, H. P. An, J. P. Chang, J. H. Chen, Y. H. Chen, J. P. Cheng, W. H. Dai, Z. Deng, C. H. Fang, X. P. Geng, H. Gong, X. Y. Guo, Q. J. Guo, L. He, S. M. He, J. W. Hu, H. X. Huang, T. C. Huang, H. T. Jia , et al. (58 additional authors not shown)

Abstract: Dark matter direct detection experiments mostly operate at deep underground laboratories. It is necessary to consider shielding effect of the Earth, especially for dark matter particles interacting with a large cross section. We analyzed and simulated the Earth shielding effect for dark matter at the China Jinping Underground Laboratory (CJPL) with a simulation package, CJPL Earth Shielding Simula… ▽ More Dark matter direct detection experiments mostly operate at deep underground laboratories. It is necessary to consider shielding effect of the Earth, especially for dark matter particles interacting with a large cross section. We analyzed and simulated the Earth shielding effect for dark matter at the China Jinping Underground Laboratory (CJPL) with a simulation package, CJPL Earth Shielding Simulation code (CJPL\_ESS), which is applicable to other underground locations. The further constraints on the $χ$-N cross section exclusion regions are derived based on the studies with CDEX experiment data. △ Less

Submitted 9 March, 2022; v1 submitted 22 November, 2021; originally announced November 2021.

Comments: 8 pages, 8 figures, 2 tables. Version updated to match PRD version

Journal ref: Phys. Rev. D 105, 052005 (2022)

Spacing Statistics of Energy Spectra: Random Matrices, Black Hole Thermalization, and Echoes

Authors: Krishan Saraswat, Niayesh Afshordi

Abstract: Recent advances in AdS/CFT holography have suggested that the near-horizon dynamics of black holes can be described by random matrix systems. We study how the energy spectrum of a system with a generic random Hamiltonian matrix affects its early and late time thermalization behaviour using the spectral form factor (which captures the time-dependence of two-point correlation functions). We introduc… ▽ More Recent advances in AdS/CFT holography have suggested that the near-horizon dynamics of black holes can be described by random matrix systems. We study how the energy spectrum of a system with a generic random Hamiltonian matrix affects its early and late time thermalization behaviour using the spectral form factor (which captures the time-dependence of two-point correlation functions). We introduce a simple statistical framework for generating random spectra in terms of the nearest neighbor spacing statistics of energy eigenvalues, enabling us to compute the averaged spectral form factor in a closed form. This helps to easily illustrate how the spectral form factor changes with different choices of nearest neighbor statistics ranging from the Poisson to Wigner surmise statistics. We suggest that it is possible to have late time oscillations in random matrix models involving $β$-ensembles (generalizing classical Gaussian ensembles). We also study the form factor of randomly coupled oscillator systems and show that at weak coupling, such systems exhibit regular decaying oscillations in the spectral form factor making them interesting toy models for gravitational wave echoes. We speculate on the holographic interpretation of a system of coupled oscillators, and suggest that they describe the thermalization behaviour of a black hole geometry with a membrane that cuts off the geometry at the stretched horizon. △ Less

Submitted 8 April, 2022; v1 submitted 7 October, 2021; originally announced October 2021.

Comments: 60 pages, 22 figures, consistent with published JHEP version

Journal ref: J. High Energ. Phys. 2022, 17 (2022)

Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2

Authors: Alvin Tang, Aravindh Kumar, Marc Jaikissoon, Krishna Saraswat, H. -S. Philip Wong, Eric Pop

Abstract: Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for ba… ▽ More Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 $\mathrm{μA/μm}$ at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS$_2$ grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is $\mathrm{29 \pm 5\ cm^2V^{-1}s^{-1}}$ at $\mathrm{6.1 \times 10^{12}\ cm^{-2}}$ electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing. △ Less

Submitted 4 September, 2021; originally announced September 2021.

Journal ref: ACS Appl. Mater. Interfaces 13, 41866 (2021)

Low Resistance III-V Hetero-contacts to N-Ge

Authors: Junkyo Suh, Pranav Ramesh, Andrew C. Meng, Aravindh Kumar, Archana Kumar, Shashank Gupta, Raisul Islam, Paul C. McIntyre, Krishna Saraswat

Abstract: We experimentally study III-V/Ge heterostructure and demonstrate InGaAs hetero-contacts to n-Ge with a wide range of In % and achieve low contact resistivity ($ρ_C$) of $5\times10^{-8} Ω\cdot cm^2$ for Ge doping of $3 \times 10^{19} cm^{-3}$. This results from re-directing the charge neutrality level (CNL) near the conduction band and benefiting from low effective mass for high electron transmissi… ▽ More We experimentally study III-V/Ge heterostructure and demonstrate InGaAs hetero-contacts to n-Ge with a wide range of In % and achieve low contact resistivity ($ρ_C$) of $5\times10^{-8} Ω\cdot cm^2$ for Ge doping of $3 \times 10^{19} cm^{-3}$. This results from re-directing the charge neutrality level (CNL) near the conduction band and benefiting from low effective mass for high electron transmission. For the first time, we observe that the heterointerface presents no temperature dependence despite the two different conduction minimum valley locations of III-V ($Γ$-valley) and Ge (L-valley), which potentially stems from elastic trap-assisted tunneling through defect states at the interface generated by dislocations. The hetero-interface plays a dominant role in the overall $ρ_C$ below $\approx 1 \times 10^{-7} Ω\cdot cm^2$, which can be further improved with large active dopant concentration in Ge by co-doping. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Comments: 2 pages, 16 figures; Accepted in SSDM 2017

High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells

Authors: Koosha Nassiri Nazif, Alwin Daus, Jiho Hong, Nayeun Lee, Sam Vaziri, Aravindh Kumar, Frederick Nitta, Michelle Chen, Siavash Kananian, Raisul Islam, Kwan-Ho Kim, Jin-Hong Park, Ada Poon, Mark L. Brongersma, Eric Pop, Krishna C. Saraswat

Abstract: Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from… ▽ More Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: 1) transparent graphene contacts to mitigate Fermi-level pinning, 2) $\rm{MoO}_\it{x}$ capping for doping, passivation and anti-reflection, and 3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of $\rm{4.4\ W\,g^{-1}}$ for flexible TMD ($\rm{WSe_2}$) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to $\rm{46\ W\,g^{-1}}$, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics. △ Less

Submitted 24 June, 2021; v1 submitted 19 June, 2021; originally announced June 2021.

Comments: 39 pages; v2: some references reformatted

Journal ref: Nature Communications 12, 7034 (2021)

Statistical Analysis of Contacts to Synthetic Monolayer MoS2

Authors: Aravindh Kumar, Alvin Tang, H. -S. Philip Wong, Krishna Saraswat

Abstract: Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the contact resistance. In this work, we show for the first time a statistical study of Au contacts to chemical vapor deposited monolayer MoS2 using transmission line… ▽ More Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the contact resistance. In this work, we show for the first time a statistical study of Au contacts to chemical vapor deposited monolayer MoS2 using transmission line model (TLM) structures, before and after dielectric encapsulation. We report contact resistance values as low as 330 ohm-um, which is the lowest value reported to date. We further study the effect of Al2O3 encapsulation on variability in contact resistance and other device metrics. Finally, we note some deviations in the TLM model for short-channel devices in the back-gated configuration and discuss possible modifications to improve the model accuracy. △ Less

Submitted 20 February, 2022; v1 submitted 16 June, 2021; originally announced June 2021.

Comments: 4 pages, 5 figures, to be published in IEEE IITC 2021 conference proceedings; fixed labels in Fig 4(b) and removed blank page at the end

Understanding partonic energy loss from measured light charged particles and jets in PbPb collisions at LHC energies

Authors: Prashant Shukla, Kapil Saraswat

Abstract: We perform a comprehensive study of partonic energy loss reflected in the nuclear modification factors of charged particles and jets measured in PbPb collisions at $\sqrt{s_{\rm NN}}$ = 2.76 and 5.02 TeV in wide transverse momentum ($p_{\rm T}$) and centrality range. The $p_{\rm T}$ distributions in pp collisions are fitted with a modified power law and the nuclear modification factor in PbPb coll… ▽ More We perform a comprehensive study of partonic energy loss reflected in the nuclear modification factors of charged particles and jets measured in PbPb collisions at $\sqrt{s_{\rm NN}}$ = 2.76 and 5.02 TeV in wide transverse momentum ($p_{\rm T}$) and centrality range. The $p_{\rm T}$ distributions in pp collisions are fitted with a modified power law and the nuclear modification factor in PbPb collisions can be obtained using effective shift ($Δp_{\rm T}$) in the spectrum measured at different centralities. Driven by physics consideration, the functional form of energy loss given by $Δp_{\rm T}$ can be assumed as power law with different power indices in three different $p_{\rm T}$ regions. The power indices and the boundaries of three $p_{\rm T}$ regions are obtained by fitting the measured nuclear modification factor as a function of $p_{\rm T}$ in all collision centralities simultaneously. The energy loss in different collisions centralities are described in terms of fractional power of number of participants. It is demanded that the power law functions in three $p_T$ regions and their derivatives are continuous at the $p_{\rm T}$ boundaries. The $Δp_{\rm T}$ for light charged particles is found to increase linearly with $p_{\rm T}$ in low $p_{\rm T}$ region below $\sim 5-6$ GeV/$c$ and approaches a constant value in high $p_{\rm T}$ region above $\sim 22-29$ GeV/$c$ with an intermediate power law connecting the two regions. The method is also used for jets and it is found that for jets, the $Δp_{\rm T}$ increases approximately linearly even at very high $p_{\rm T}$. △ Less

Submitted 13 May, 2021; originally announced May 2021.

Comments: 19 pages, 14 figures

Journal ref: 2020 J. Phys. G: Nucl. Part. Phys. 47 125103

Studies of Quantum-Mechanical Coherency Effects in Neutrino-Nucleus Elastic Scattering

Authors: V. Sharma, L. Singh, H. T. Wong, M. Agartioglu, J. -W. Chen, M. Deniz, S. Kerman, H. B Li, C. -P. Liu, K. Saraswat, M. K. Singh, V. Singh

Abstract: Neutrino-nucleus elastic scattering ($ν{\rm A}_{el}$) provides a unique laboratory to study the quantum-mechanical (QM) coherency effects in electroweak interactions. The deviations of the cross-sections from those of completely coherent systems can be quantitatively characterized through a coherency parameter $α( q^2 )$. The relations between $α$ and the underlying nuclear physics in terms of nuc… ▽ More Neutrino-nucleus elastic scattering ($ν{\rm A}_{el}$) provides a unique laboratory to study the quantum-mechanical (QM) coherency effects in electroweak interactions. The deviations of the cross-sections from those of completely coherent systems can be quantitatively characterized through a coherency parameter $α( q^2 )$. The relations between $α$ and the underlying nuclear physics in terms of nuclear form factors are derived. The dependence of cross-section on $α( q^2 )$ for the various neutrino sources is presented. The $α( q^2 )$-values are evaluated from the measured data of the COHERENT CsI and Ar experiments. Complete coherency and decoherency conditions are excluded by the CsI data with $p {=} 0.004$ at $q^2 {=} 3.1 {\times} 10^{3} ~ {\rm MeV^2}$ and with $p {=} 0.016$ at $q^2 {=} 2.3 {\times} 10^{3} ~ {\rm MeV^2}$, respectively, verifying that both QM superpositions and nuclear many-body effects contribute to $ν{\rm A}_{el}$ interactions. △ Less

Submitted 7 May, 2021; v1 submitted 14 October, 2020; originally announced October 2020.

Comments: V2 Published Version, 10 pages, 10 figures

Journal ref: Phys. Rev. D 103, 092002 (2021)

Extracting Hawking Radiation Near the Horizon of AdS Black Holes

Authors: Krishan Saraswat, Niayesh Afshordi

Abstract: We study how the evaporation rate of spherically symmetric black holes is affected through the extraction of radiation close to the horizon. We adopt a model of extraction that involves a perfectly absorptive screen placed close to the horizon and show that the evaporation rate can be changed depending on how close to the horizon the screen is placed. We apply our results to show that the scrambli… ▽ More We study how the evaporation rate of spherically symmetric black holes is affected through the extraction of radiation close to the horizon. We adopt a model of extraction that involves a perfectly absorptive screen placed close to the horizon and show that the evaporation rate can be changed depending on how close to the horizon the screen is placed. We apply our results to show that the scrambling time defined by the Hayden-Preskill decoding criterion, which is derived in Pennington's work (arXiv:1905.08255) through entanglement wedge reconstruction is modified. The modifications appear as logarithmic corrections to Pennington's time scale which depend on where the absorptive screen is placed. By fixing the proper distance between the horizon and screen we show that for small AdS black holes the leading order term in the scrambling time is consistent with Pennington's scrambling time. However, for large AdS black holes the leading order Log contains the Bekenstein-Hawking entropy of a cell of characteristic length equal to the AdS radius rather than the entropy of the full horizon. Furthermore, using the correspondence between the radial null energy condition (NEC) and the holographic c-theorem, we argue that the screen cannot be arbitrarily close to the horizon. This leads to a holographic argument that black hole mining using a screen cannot significantly alter the lifetime of a black hole. △ Less

Submitted 10 February, 2021; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: 46 pages, 8 figures, Added numerical calculations and comparisons to approximations, Added appendices, Published in JHEP

Quantum Nature of Black Holes: Fast Scrambling versus Echoes

Authors: Krishan Saraswat, Niayesh Afshordi

Abstract: Two seemingly distinct notions regarding black holes have captured the imagination of theoretical physicists over the past decade: First, black holes are conjectured to be fast scramblers of information, a notion that is further supported through connections to quantum chaos and decay of mutual information via AdS/CFT holography. Second, black hole information paradox has motivated exotic quantum… ▽ More Two seemingly distinct notions regarding black holes have captured the imagination of theoretical physicists over the past decade: First, black holes are conjectured to be fast scramblers of information, a notion that is further supported through connections to quantum chaos and decay of mutual information via AdS/CFT holography. Second, black hole information paradox has motivated exotic quantum structure near horizons of black holes (e.g., gravastars, fuzzballs, or firewalls) that may manifest themselves through delayed gravitational wave echoes in the aftermath of black hole formation or mergers, and are potentially observable by LIGO/Virgo observatories. By studying various limits of charged AdS/Schwarzschild black holes we show that, if properly defined, the two seemingly distinct phenomena happen on an identical timescale of log(Radius)/$(π\times {\rm Temperature})$. We further comment on the physical interpretation of this coincidence and the corresponding holographic interpretation of black hole echoes. △ Less

Submitted 22 April, 2020; v1 submitted 6 June, 2019; originally announced June 2019.

Comments: 36 pages, 7 figures, added references, added discussion in section 5.2 on choice of minimal perturbation to a black hole with supplementary appendices, published in JHEP

Charged current deep inelastic scattering of muon neutrinos off ^{56}Fe

Authors: Deepika Grover, Kapil Saraswat, Prashant Shukla, Venktesh Singh

Abstract: In this paper, we study charged current deep inelastic scattering of muon neutrinos off ^{56}Fe nuclei using Hirai, Kumano and Saito model. The LHA Parton Distribution Functions (PDFs) - CT10 are used to describe the partonic content of hadrons. Modification of PDFs inside the nuclei is done using EPPS16 parameterization at next-to-leading order. Target mass correction has also been incorporated i… ▽ More In this paper, we study charged current deep inelastic scattering of muon neutrinos off ^{56}Fe nuclei using Hirai, Kumano and Saito model. The LHA Parton Distribution Functions (PDFs) - CT10 are used to describe the partonic content of hadrons. Modification of PDFs inside the nuclei is done using EPPS16 parameterization at next-to-leading order. Target mass correction has also been incorporated in the calculations. We calculate the structure functions (F_{2}(x,Q^{2}) and xF_{3}(x,Q^{2})), the ratios (R_{2}(x,Q^{2}) = \frac{F^{^{56}Fe}_{2}}{F^{Nucleon}_{2}} and R_{3}(x,Q^{2}) = \frac{F^{^{56}Fe}_{3}}{F^{Nucleon}_{3}}) and the differential cross sections of muon neutrino deep inelastic scattering off a nucleon and ^{56}Fe nuclei. We compare the obtained results with measured experimental data. The present theoretical approach gives a good description of data. △ Less

Submitted 1 August, 2018; originally announced August 2018.

Comments: Pages 16, Figures 12,

Journal ref: Phys. Rev. C 98, 065503 (2018)

Charged current quasi elastic scattering of muon anti-neutrino off ^{12}C

Authors: Deepika Grover, Kapil Saraswat, Prashant Shukla, Venktesh Singh

Abstract: In this work, we study charged current quasi elastic scattering of muon anti-neutrino off nucleon and nucleus using a formalism based on Llewellyn Smith (LS) model. Parameterizations by Galster et al. are used for electric and magnetic Sach's form factors of nucleons. We use Fermi gas model along with Pauli suppression condition to take into account the nuclear effects in anti-neutrino - nucleus Q… ▽ More In this work, we study charged current quasi elastic scattering of muon anti-neutrino off nucleon and nucleus using a formalism based on Llewellyn Smith (LS) model. Parameterizations by Galster et al. are used for electric and magnetic Sach's form factors of nucleons. We use Fermi gas model along with Pauli suppression condition to take into account the nuclear effects in anti-neutrino - nucleus QES. We calculate muon anti-neutrino-p and muon anti-neutrino-^{12}C charged current quasi elastic scattering differential and total cross sections for different values of axial mass M_{A} and compare the results with data from GGM, SKAT, BNL, NOMAD, MINERvA and MiniBooNE experiments. The present theoretical approach gives an excellent description of differential cross section data. The calculations with axial mass M_{A} = 0.979 and 1.05 GeV are compatible with data from most of the experiments. △ Less

Submitted 24 July, 2018; originally announced July 2018.

Comments: 07 pages, 09 Figures

Journal ref: Chainese Physics C (2018)

Charged and Neutral Current Pion Production in Neutrino-Nucleus Scattering

Authors: Kapil Saraswat, Prashant Shukla, Vineet Kumar, Venktesh Singh

Abstract: In this article, we present the charged and neutral current coherent pion production in the neutrino-nucleus interaction in the resonance region using the formalism based on the partially conserved axial current (PCAC) theorem which relates the neutrino-nucleus cross section to the pion-nucleus elastic cross section. The pion nucleus elastic cross section is calculated using the Glauber model appr… ▽ More In this article, we present the charged and neutral current coherent pion production in the neutrino-nucleus interaction in the resonance region using the formalism based on the partially conserved axial current (PCAC) theorem which relates the neutrino-nucleus cross section to the pion-nucleus elastic cross section. The pion nucleus elastic cross section is calculated using the Glauber model approach. We calculate the integrated cross sections for neutrino-carbon, neutrino-iron and neutrino-oxygen scattering. The results of integrated cross-section calculations are compared with the measured data △ Less

Submitted 30 May, 2018; originally announced May 2018.

Comments: XXII DAE High Energy Physics Symposium, Springer Proceedings in Physics 203

Freeze-out of Strange Hadron in pp, pPb and PbPb Collisions at LHC Energies

Authors: Kapil Saraswat, Prashant Shukla, Vineet Kumar, Venktesh Singh

Abstract: In this article, we will present a systematic analysis of transverse momentum spectra of the strange hadron in different multiplicity events produced in pp collision at $\sqrt{s}$ = 7 TeV, pPb collision at $\sqrt{s_{NN}}$ = 5.02 TeV and PbPb collision at $\sqrt{s_{NN}}$ = 2.76 TeV. The differential freeze out scenario of strange hadron $K^{0}_{s}$ assumed while analyzing the data using a Tsallis d… ▽ More In this article, we will present a systematic analysis of transverse momentum spectra of the strange hadron in different multiplicity events produced in pp collision at $\sqrt{s}$ = 7 TeV, pPb collision at $\sqrt{s_{NN}}$ = 5.02 TeV and PbPb collision at $\sqrt{s_{NN}}$ = 2.76 TeV. The differential freeze out scenario of strange hadron $K^{0}_{s}$ assumed while analyzing the data using a Tsallis distribution which is modified to include transverse flow. The $p_{T}$ distributions of strange hadron in different systems are characterized in terms of the parameters namely, Tsallis temperature ($T$), power ($n$) and average transverse flow velocity ($β$). △ Less

Submitted 30 May, 2018; originally announced May 2018.

Comments: XXII DAE High Energy Physics Symposium, Springer Proceedings in Physics 203

Positive gravitational subsystem energies from CFT cone relative entropies

Authors: Dominik Neuenfeld, Krishan Saraswat, Mark Van Raamsdonk

Abstract: The positivity of relative entropy for spatial subsystems in a holographic CFT implies the positivity of certain quantities in the dual gravitational theory. In this note, we consider CFT subsystems whose boundaries lie on the lightcone of a point $p$. We show that the positive gravitational quantity which corresponds to the relative entropy for such a subsystem $A$ is a novel notion of energy ass… ▽ More The positivity of relative entropy for spatial subsystems in a holographic CFT implies the positivity of certain quantities in the dual gravitational theory. In this note, we consider CFT subsystems whose boundaries lie on the lightcone of a point $p$. We show that the positive gravitational quantity which corresponds to the relative entropy for such a subsystem $A$ is a novel notion of energy associated with a gravitational subsystem bounded by the minimal area extremal surface $\tilde{A}$ associated with $A$ and by the AdS boundary region $\hat{A}$ corresponding to the part of the lightcone from $p$ bounded by $\partial A$. This generalizes the results of arXiv:1605.01075 for ball-shaped regions by making use of the recent results in arXiv:1703.10656 for the vacuum modular Hamiltonian of regions bounded on lightcones. As part of our analysis, we give an analytic expression for the extremal surface in pure AdS associated with any such region $A$. We note that its form immediately implies the Markov property of the CFT vacuum (saturation of strong subadditivity) for regions bounded on the same lightcone. This gives a holographic proof of the result proven for general CFTs in arXiv:1703.10656. A similar holographic proof shows the Markov property for regions bounded on a lightsheet for non-conformal holographic theories defined by relevant perturbations of a CFT. △ Less

Submitted 16 March, 2018; v1 submitted 5 February, 2018; originally announced February 2018.

Comments: 20 pages + appendix, 2 figures; v2: references added, argument in section 5.2 corrected

Low-threshold optically pumped lasing in highly strained Ge nanowires

Authors: Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme, Shashank Gupta, Krishna Saraswat, Kwang Hong Lee, Yeji Kim, Dabin Min, Yongduck Jung, Haodong Qiu, Hong Wang, Eugene A. Fitzgerald, Chuan Seng Tan, Donguk Nam

Abstract: The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure ha… ▽ More The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be any successful demonstration of lasing from this seemingly promising material system. Here, we demonstrate a low-threshold, compact group IV laser that employs germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently surmount optical losses at 83 K, thus allowing the first observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm^-^2. Our demonstration opens up a new horizon of group IV lasers for photonic-integrated circuits. △ Less

Submitted 15 August, 2017; originally announced August 2017.

Comments: 31 pages, 9 figures

Transverse momentum spectra of hadrons in high energy pp and heavy ion collisions

Authors: Kapil Saraswat, Prashant Shukla, Venktesh Singh

Abstract: We present a study of transverse momentum ($p_{T}$) spectra of unidentified charged particles in pp collisions at RHIC and LHC energies from $\sqrt{s}$ = 62.4 GeV to 13 TeV using Tsallis/Hagedorn function. The power law of Tsallis/Hagedorn form gives excellent description of the hadron spectra in $p_{T}$ range from 0.2 to 300 GeV/$c$. The power index $n$ of the $p_T$ distributions is found to foll… ▽ More We present a study of transverse momentum ($p_{T}$) spectra of unidentified charged particles in pp collisions at RHIC and LHC energies from $\sqrt{s}$ = 62.4 GeV to 13 TeV using Tsallis/Hagedorn function. The power law of Tsallis/Hagedorn form gives excellent description of the hadron spectra in $p_{T}$ range from 0.2 to 300 GeV/$c$. The power index $n$ of the $p_T$ distributions is found to follow a function of the type $a+b/\sqrt {s}$ with asymptotic value $a = 5.72$. The parameter $T$ governing the soft bulk contribution to the spectra remains almost same over wide range of collision energies. We also provide a Tsallis/Hagedorn fit to the $p_{T}$ spectra of hadrons in pPb and different centralities of PbPb collisions at $\sqrt{s_{NN}}$ = 5.02 TeV. The data/fit shows deviations from the Tsallis distribution which become more pronounced as the system size increases. We suggest simple modifications in the Tsallis/Hagedorn power law function and show that the above deviations can be attributed to the transverse flow in low $p_T$ region and to the in-medium energy loss in high $p_T$ region. △ Less

Submitted 22 February, 2018; v1 submitted 15 June, 2017; originally announced June 2017.

Journal ref: J. Phys. Commun. 2 (2018) 035003

Strange hadron production in pp, pPb and PbPb collisions at LHC energies

Authors: Kapil Saraswat, Prashant Shukla, Vineet Kumar, Venktesh Singh

Abstract: We present a systematic analysis of transverse momentum $(p_{T})$ spectra of the strange hadrons in different multiplicity events produced in pp collision at $\sqrt{s}$ = 7 TeV, pPb collision at $\sqrt{s_{NN}}$ = 5.02 TeV and PbPb collision at $\sqrt{s_{NN}}$ = 2.76 TeV. Both the single and differential freeze out scenarios of strange hadrons $K^0_s$, $Λ$ and $Ξ^-$ are considered while fitting usi… ▽ More We present a systematic analysis of transverse momentum $(p_{T})$ spectra of the strange hadrons in different multiplicity events produced in pp collision at $\sqrt{s}$ = 7 TeV, pPb collision at $\sqrt{s_{NN}}$ = 5.02 TeV and PbPb collision at $\sqrt{s_{NN}}$ = 2.76 TeV. Both the single and differential freeze out scenarios of strange hadrons $K^0_s$, $Λ$ and $Ξ^-$ are considered while fitting using a Tsallis distribution which is modified to include transverse flow. The $p_{T}$ distributions of these hadrons in different systems are characterized in terms of the parameters namely, Tsallis temperature $(T)$, power $(n)$ and average transverse flow velocity $(β)$. It is found that for all the systems, transverse flow increases as we move from lower to higher multiplicity events. In the case of the differential freeze-out scenario, the degree of thermalization remains similar for events of different multiplicity classes in all the three systems. The Tsallis temperature increases with the mass of the hadrons and also increases with the event multiplicity in pp and pPb system but shows little variation with the multiplicity in PbPb system. In the case of the single freeze-out scenario, the difference between small systems (pp, pPb) and PbPb system becomes more evident. The high multiplicity PbPb events show higher degree of thermalization as compared to the events of pp and pPb systems. The trend of variation of the temperature in PbPb system with event multiplicity is opposite to what is found in the pp and pPb systems. △ Less

Submitted 8 May, 2017; v1 submitted 19 February, 2017; originally announced February 2017.

Journal ref: Eur.Phys.J. A53 (2017) no.5, 84

Energy loss of heavy quarks and $B$ and $D$ meson spectra in PbPb collisions at LHC energies

Authors: Kapil Saraswat, Prashant Shukla, Vineet Kumar, Venktesh Singh

Abstract: We study the production and evolution of charm and bottom quarks in hot partonic medium produced in heavy ion collisions. The heavy quarks loose energy in the medium which is reflected in the transverse momentum spectra of heavy mesons. The collisional energy loss of heavy quarks has been calculated using QCD calculations. The radiative energy loss is obtained using two models namely reaction oper… ▽ More We study the production and evolution of charm and bottom quarks in hot partonic medium produced in heavy ion collisions. The heavy quarks loose energy in the medium which is reflected in the transverse momentum spectra of heavy mesons. The collisional energy loss of heavy quarks has been calculated using QCD calculations. The radiative energy loss is obtained using two models namely reaction operator formalism and generalized dead cone approach. The nuclear modification factors, $R_{AA}$ as a function of transverse momentum by including shadowing and energy loss are calculated for $D^{0}$ and $B^{+}$ mesons in PbPb collisions at $\sqrt{s_{NN}}$ = 5.02 TeV and for $D^{0}$ mesons at $\sqrt{s_{NN}}$ = 2.76 TeV and are compared with the recent measurements. The radiative energy loss from generalized dead cone approach alone is sufficient to produce measured $D^{0}$ meson $R_{AA}$ at both the LHC energies. The radiative energy loss from reaction operator formalism plus collisional energy loss gives good description of $D^{0}$ meson $R_{AA}$. For the case of $B^{+}$ meson, the radiative energy loss from generalized dead cone approach plus collisional energy loss gives good description of the CMS data. The radiative process is dominant for charm quarks while for the bottom, both the radiative process and the elastic collisions are important. △ Less

Submitted 19 February, 2017; originally announced February 2017.

Charged current quasi elastic scattering of muon neutrino with nuclei

Authors: Kapil Saraswat, Prashant Shukla, Vineet Kumar, Venktesh Singh

Abstract: We present a study on the charge current quasi elastic scattering of $ν_μ$ from nucleon and nuclei which gives a charged muon in the final state. To describe nuclei, the Fermi Gas model has been used with proposed Pauli suppression factor. The diffuseness parameter of the Fermi distribution has been obtained using experimental data. We also investigate different parametrizations for electric and m… ▽ More We present a study on the charge current quasi elastic scattering of $ν_μ$ from nucleon and nuclei which gives a charged muon in the final state. To describe nuclei, the Fermi Gas model has been used with proposed Pauli suppression factor. The diffuseness parameter of the Fermi distribution has been obtained using experimental data. We also investigate different parametrizations for electric and magnetic Sach's form factors of nucleons. Calculations have been made for CCQES total and differential cross sections for the cases of $ν_μ-N$, $ν_μ-^{12}C$ and $ν_μ-^{56}Fe$ scatterings and are compared with the data for different values of the axial mass. The present model gives excellent description of measured differential cross section for all the systems. △ Less

Submitted 16 June, 2017; v1 submitted 22 June, 2016; originally announced June 2016.

Comments: 14 pages, 14 figures

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Authors: Chris D. English, Gautam Shine, Vincent E. Dorgan, Krishna C. Saraswat, Eric Pop

Abstract: The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (10^12 to 10^13 1/cm^2), and contact dimensions (20 to 500 nm). We uncover that Au depos… ▽ More The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (10^12 to 10^13 1/cm^2), and contact dimensions (20 to 500 nm). We uncover that Au deposited in ultra-high vacuum (~10^-9 Torr) yields three times lower Rc than under normal conditions, reaching 740 Ohm-um and specific contact resistivity 3x10^-7 Ohm.cm2, stable for over four months. Modeling reveals separate Rc contributions from the Schottky barrier and the series access resistance, providing key insights on how to further improve scaling of MoS2 contacts and transistor dimensions. The contact transfer length is ~35 nm at 300 K, which is verified experimentally using devices with 20 nm contacts and 70 nm contact pitch (CP), equivalent to the "14 nm" technology node. △ Less

Submitted 21 June, 2016; v1 submitted 12 May, 2016; originally announced May 2016.

Journal ref: Nano Letters, 16, 3824-3820 (2016)

Coherent Pion Production in Neutrino Nucleus Scattering

Authors: Kapil Saraswat, Prashant Shukla, Vineet Kumar, Venktesh Singh

Abstract: In this article, we study the coherent pion production in neutrino-nucleus interaction in the resonance region using the formalism based on partially conserved axial current (PCAC) theorem which relates the neutrino-nucleus cross section to the pion-nucleus elastic cross section. The pion nucleus elastic cross section is calculated using the Glauber model in terms of pion-nucleon cross sections ob… ▽ More In this article, we study the coherent pion production in neutrino-nucleus interaction in the resonance region using the formalism based on partially conserved axial current (PCAC) theorem which relates the neutrino-nucleus cross section to the pion-nucleus elastic cross section. The pion nucleus elastic cross section is calculated using the Glauber model in terms of pion-nucleon cross sections obtained by parameterizing the experimental data. We calculate the differential and integrated cross sections for charged current coherent pion production in neutrino carbon scattering. The results of integrated cross section calculations are compared with the measured data. Predictions for the differential and integrated cross sections for coherent pion productions in neutrino iron scattering using above formalism are also made. △ Less

Submitted 22 March, 2016; v1 submitted 25 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. C 93, 035504 (2016)

Energy loss of $B$ and $D$ mesons in PbPb collisions at $\sqrt{s_{NN}}$ = 2.76 TeV

Authors: Kapil Saraswat, Prashant Shukla, Venktesh Singh

Abstract: We present the calculations of collisional and radiative energy loss of $B$ and $D$ mesons in the medium produced in PbPb collisions at $\sqrt{s_{NN}}$ = 2.76 TeV. The nuclear modification factor $R_{AA}$ of $B$ and $D$ mesons including shadowing and energy loss are calculated and compared with the measured data. While the $D$ meson $R_{AA}$ can be described in terms of the radiative energy loss a… ▽ More We present the calculations of collisional and radiative energy loss of $B$ and $D$ mesons in the medium produced in PbPb collisions at $\sqrt{s_{NN}}$ = 2.76 TeV. The nuclear modification factor $R_{AA}$ of $B$ and $D$ mesons including shadowing and energy loss are calculated and compared with the measured data. While the $D$ meson $R_{AA}$ can be described in terms of the radiative energy loss alone, both the collisional as well as radiative energy loss are required to explain the $B$ meson measurements. △ Less

Submitted 17 November, 2015; originally announced November 2015.

Comments: arXiv admin note: substantial text overlap with arXiv:1507.06742

Journal ref: PoS (ICPAQGP2015) 082

Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process

Authors: David S. Sukhdeo, Jan Petykiewicz, Shashank Gupta, Daeik Kim, Sungdae Woo, Youngmin Kim, Jelena Vuckovic, Krishna C. Saraswat, Donguk Nam

Abstract: We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk… ▽ More We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk is compensated by depositing compressively stressed silicon nitride layer. Two-dimensional Raman spectroscopy measurements along with finite-element method simulations confirm a relatively homogeneous strain distribution within the final microdisk structure. Photoluminescence results show clear optical resonances due to whispering gallery modes which are in good agreement with finite-difference time-domain optical simulations. Our bandgap-customizable microdisks present a new route towards an efficient germanium light source for on-chip optical interconnects. △ Less

Submitted 25 October, 2015; originally announced October 2015.

Comments: 6 pages, 5 figures

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Authors: Jan Petykiewicz, Donguk Nam, David S. Sukhdeo, Shashank Gupta, Sonia Buckley, Alexander Y. Piggott, Jelena Vučković, Krishna C. Saraswat

Abstract: A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudo-heterostructure, and high-Q optical cavity. Our light emitting structure presents gr… ▽ More A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudo-heterostructure, and high-Q optical cavity. Our light emitting structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2,000. The emission wavelength is tuned over more than 400 nm with a single lithography step. We find increased optical gain in optical cavities formed with germanium under high (>2.3%) tensile strain. Through quantitative analysis of gain/loss mechanisms, we find that free carrier absorption from the hole bands dominates the gain, resulting in no net gain even from highly strained, n-type doped germanium. △ Less

Submitted 5 August, 2015; originally announced August 2015.

Comments: J.P. and D.N. contributed equally to this work

Constraining heavy quark energy loss using $B$ and $D$ meson measurements in heavy ion collision at RHIC and LHC energies

Authors: Kapil Saraswat, Prashant Shukla, Venktesh Singh

Abstract: In this work, we calculate energy loss of heavy quark (charm and bottom) due to elastic collisions and gluon radiation in hot/dense medium. The collisional energy loss has been obtained using QCD calculations. The radiative energy loss is calculated using reaction operator formalism and generalized dead cone approach. We rederive the energy loss expression using same assumptions as generalized dea… ▽ More In this work, we calculate energy loss of heavy quark (charm and bottom) due to elastic collisions and gluon radiation in hot/dense medium. The collisional energy loss has been obtained using QCD calculations. The radiative energy loss is calculated using reaction operator formalism and generalized dead cone approach. We rederive the energy loss expression using same assumptions as generalized dead cone approach but obtain slightly different results. We also improve the model employed to calculate path length and the system evolution. The nuclear modification factors $R_{AA}$ including shadowing and energy loss are evaluated for $B$ and $D$ mesons and are compared with the measurements in PbPb collision at $\sqrt{s_{NN}}$ = 2.76 TeV and with the D meson and Heavy flavour (HF) electrons measurements in AuAu collision at $\sqrt{s_{NN}}$ = 200 GeV. The radiative energy loss calculated by reaction operator formalism added with collisional energy loss describes the RHIC HF electron suppression in high $p_{T}$ range. It also describes the LHC measurement of $B$ meson suppression but overestimates the suppression of $D$ meson. The radiative energy loss from generalized dead cone approach describes the charm suppression at both RHIC as well as LHC energies and requires energy loss due to collisions to be added in order to describe the bottom suppression at LHC. △ Less

Submitted 11 August, 2015; v1 submitted 24 July, 2015; originally announced July 2015.

Comments: 27 pages, 16 figures

Ultimate Limit of Biaxial Tensile Strain and N-Type Doping for Realizing an Efficient Low-Threshold Ge Laser

Authors: David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat, Birendra, Dutt, Donguk Nam

Abstract: We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-type doping. Our finding shows that there exist ultimate limits beyond which point no further benefit can be realized through increased tensile strain or n-type doping. Here were quantify these limits, showing that the op… ▽ More We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-type doping. Our finding shows that there exist ultimate limits beyond which point no further benefit can be realized through increased tensile strain or n-type doping. Here were quantify these limits, showing that the optimal design for minimizing threshold involves about 3.7% biaxial tensile strain and 2x1018 cm-3 n-type doping, whereas the optimal design for maximum slope efficiency involves about 2.3% biaxial tensile strain with 1x1019 cm-3 n-type doping. Increasing the strain and/or doping beyond these limits will degrade the threshold or slope efficiency, respectively. △ Less

Submitted 2 July, 2015; originally announced July 2015.

Comments: 16 pages

Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources

Authors: David S. Sukhdeo, Krishna C. Saraswat, Birendra, Dutt, Donguk Nam

Abstract: We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater enhancements than techniques such as tensile strain, the leading approach for enhancing Ge light emission. Even for Ge that is so heavily strained that it beco… ▽ More We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater enhancements than techniques such as tensile strain, the leading approach for enhancing Ge light emission. Even for Ge that is so heavily strained that it becomes a direct bandgap semiconductor, the ~1 ns defect-limited carrier lifetime of typical epitaxial Ge limits the LED internal quantum efficiency to less than 10%. In contrast, if the epitaxial Ge carrier lifetime can be increased to its bulk value, internal quantum efficiencies exceeding 90% become possible. For Ge lasers, we show that the defect-limited lifetime becomes increasing important as tensile strain is introduced, and that this defect-limited lifetime must be improved if the full benefits of strain are to be realized. We conversely show that improving the material quality supersedes much of the utility of n-type doping for Ge lasers. △ Less

Submitted 29 June, 2015; originally announced June 2015.

Comments: 12 pages

Anomalous Threshold Reduction from <100> Uniaxial Strain for a Low-Threshold Ge Laser

Authors: David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat, Birendra Dutt, Donguk Nam

Abstract: We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain medium. This anomalous reduction is accompanied by an abrupt jump in the emission wavelength and is explained by how the light-hole band raises relative to the he… ▽ More We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain medium. This anomalous reduction is accompanied by an abrupt jump in the emission wavelength and is explained by how the light-hole band raises relative to the heavy-hole band due to uniaxial strain. Approximately 3.2% uniaxial strain is required to achieve this anomalous threshold reduction for 1x1019 cm-3 n-type doping, and a complex interaction between uniaxial strain and n-type doping is observed. This anomalous threshold reduction represents a substantial performance advantage for uniaxially strained Ge lasers relative to other forms of Ge band engineering such as biaxial strain or tin alloying. Achieving this critical combination of uniaxial strain and doping for the anomalous threshold reduction is dramatically more relevant to practical devices than realizing a direct band gap. △ Less

Submitted 28 June, 2015; originally announced June 2015.

Comments: 11 pages

Theoretical Modeling for the Interaction of Tin alloying with N-Type Doping and Tensile Strain for GeSn Lasers

Authors: David S. Sukhdeo, Krishna C. Saraswat, Birendra, Dutt, Donguk Nam

Abstract: We investigate the interaction of tin alloying with tensile strain and n-type doping for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a modified tight-binding formalism that incorporates the effect of tin alloying on conduction band changes, we calculate how threshold current density and slope efficiency are affected by tin alloying in the presence of tens… ▽ More We investigate the interaction of tin alloying with tensile strain and n-type doping for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a modified tight-binding formalism that incorporates the effect of tin alloying on conduction band changes, we calculate how threshold current density and slope efficiency are affected by tin alloying in the presence of tensile strain and n-type doping. Our results show that while there exists a negative interaction between tin alloying and n-type doping, tensile strain can be effectively combined with tin alloying to dramatically improve the Ge gain medium in terms of both reducing the threshold and increasing the expected slope efficiency. Through quantitative modeling we find the best design to include large amounts of both tin alloying and tensile strain but only moderate amounts of n-type doping if researchers seek to achieve the best possible performance in a Ge-based laser. △ Less

Submitted 28 June, 2015; originally announced June 2015.

Comments: 10 pages

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

Authors: David S. Sukhdeo, Donguk Nam, Ju-Hyung Kang, Mark L. Brongersma, Krishna C. Saraswat

Abstract: Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating a… ▽ More Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to biaxially strained germanium lasers for silicon-compatible optical interconnects. △ Less

Submitted 3 November, 2014; originally announced November 2014.

Comments: 28 pages (19 pages main text + 9 pages supporting information), 10 figures (6 figures main text + 4 figures supporting information)

Model uncertainties on limits for quantum black hole production in dijet events from ATLAS

Authors: Douglas M. Gingrich, Krishan Saraswat

Abstract: We study the model uncertainties on limits for quantum black hole production in dijet events from ATLAS. For models that assume a hard-disk cross section, the model uncertainty on the threshold mass limits is about 5%. If the trapped surface calculation is used for the cross section, the ATLAS mass threshold limits are below 2 TeV for all number of dimensions. Using the ATLAS data in the context o… ▽ More We study the model uncertainties on limits for quantum black hole production in dijet events from ATLAS. For models that assume a hard-disk cross section, the model uncertainty on the threshold mass limits is about 5%. If the trapped surface calculation is used for the cross section, the ATLAS mass threshold limits are below 2 TeV for all number of dimensions. Using the ATLAS data in the context of the Randall-Sundrum type-1 model gives a threshold mass lower limit of 2.84 TeV. △ Less

Submitted 12 October, 2012; originally announced October 2012.

Comments: 9 pages, 5 figures

Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser

Authors: Donguk Nam, David Sukhdeo, Szu-Lin Cheng, Arunanshu Roy, Kevin Chih-Yao Huang, Mark Brongersma, Yoshio Nishi, Krishna Saraswat

Abstract: We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectr… ▽ More We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers. △ Less

Submitted 16 February, 2012; originally announced February 2012.

Comments: 4 Pages, 5 figures

Enhancing hole mobility in III-V semiconductors

Authors: Aneesh Nainani, Brian. R. Bennett, J. Brad Boos, Mario G. Ancona, Krishna C. Saraswat

Abstract: Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as silicon and germanium. In this paper we explore the used of strain and heterostructure design guided… ▽ More Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as silicon and germanium. In this paper we explore the used of strain and heterostructure design guided by bandstructure modeling to enhance the hole mobility in III-V materials. Parameters such as strain, valence band offset, effective masses and splitting between the light and heavy hole bands that are important for optimizing hole transport are measured quantitatively using various experimental techniques. A peak Hall mobility for the holes of 960cm2/Vs is demonstrated and the high hole mobility is maintained even at high sheet charge. △ Less

Submitted 28 August, 2011; originally announced August 2011.

Comments: 18 pages, 21 figures