Showing 1–50 of 68 results for author: Santos, M B

Quantum oblivious transfer: a short review

Authors: Manuel B. Santos, Paulo Mateus, Armando N. Pinto

Abstract: Quantum cryptography is the field of cryptography that explores the quantum properties of matter. Its aim is to develop primitives beyond the reach of classical cryptography or to improve on existing classical implementations. Although much of the work in this field is dedicated to quantum key distribution (QKD), some important steps were made towards the study and development of quantum oblivious… ▽ More Quantum cryptography is the field of cryptography that explores the quantum properties of matter. Its aim is to develop primitives beyond the reach of classical cryptography or to improve on existing classical implementations. Although much of the work in this field is dedicated to quantum key distribution (QKD), some important steps were made towards the study and development of quantum oblivious transfer (QOT). It is possible to draw a comparison between the application structure of both QKD and QOT primitives. Just as QKD protocols allow quantum-safe communication, QOT protocols allow quantum-safe computation. However, the conditions under which QOT is actually quantum-safe have been subject to a great amount of scrutiny and study. In this review article, we survey the work developed around the concept of oblivious transfer in the area of theoretical quantum cryptography, with an emphasis on some proposed protocols and their security requirements. We review the impossibility results that daunt this primitive and discuss several quantum security models under which it is possible to prove QOT security. △ Less

Submitted 26 June, 2022; v1 submitted 6 June, 2022; originally announced June 2022.

Comments: 40 pages, 14 figures

Topological Band Systems and Finite Size Effects

Authors: Manuel B. Santos

Abstract: The recent discoveries about topological insulators have been promoting theoretical and experimental research. In this dissertation, the basic concepts of topological insulators and the Quantum Hall Effect are reviewed focusing the discussion on edge states and their band structure. Lattice models with pierced magnetism are described and the Hofstadter model is presented for bounded systems with a… ▽ More The recent discoveries about topological insulators have been promoting theoretical and experimental research. In this dissertation, the basic concepts of topological insulators and the Quantum Hall Effect are reviewed focusing the discussion on edge states and their band structure. Lattice models with pierced magnetism are described and the Hofstadter model is presented for bounded systems with and without an in-site disorder. An overview of the experimental procedure based on cold atoms in optical lattices with synthetic dimensions is given. In order to understand to what extent these small systems of cold atoms mimic the behaviour of a topological insulator, an analysis of some finite size effects is provided and a deduction of the gap opening in the band structure is presented using perturbation theory. △ Less

Submitted 29 April, 2022; originally announced May 2022.

Comments: Master's thesis

Quantum Universally Composable Oblivious Linear Evaluation

Authors: Manuel B. Santos, Paulo Mateus, Chrysoula Vlachou

Abstract: Oblivious linear evaluation is a generalization of oblivious transfer, whereby two distrustful parties obliviously compute a linear function, f (x) = ax + b, i.e., each one provides their inputs that remain unknown to the other, in order to compute the output f (x) that only one of them receives. From both a structural and a security point of view, oblivious linear evaluation is fundamental for ar… ▽ More Oblivious linear evaluation is a generalization of oblivious transfer, whereby two distrustful parties obliviously compute a linear function, f (x) = ax + b, i.e., each one provides their inputs that remain unknown to the other, in order to compute the output f (x) that only one of them receives. From both a structural and a security point of view, oblivious linear evaluation is fundamental for arithmetic-based secure multi-party computation protocols. In the classical case, oblivious linear evaluation protocols can be generated using oblivious transfer, and their quantum counterparts can, in principle, be constructed as straightforward extensions using quantum oblivious transfer. Here, we present the first, to the best of our knowledge, quantum protocol for oblivious linear evaluation that, furthermore, does not rely on quantum oblivious transfer. We start by presenting a semi-honest protocol, and then extend it to the dishonest setting employing a commit-and-open strategy. Our protocol uses high-dimensional quantum states to obliviously compute f (x) on Galois Fields of prime and prime-power dimension. These constructions utilize the existence of a complete set of mutually unbiased bases in prime-power dimension Hilbert spaces and their linear behaviour upon the Heisenberg-Weyl operators. We also generalize our protocol to achieve vector oblivious linear evaluation, where several instances of oblivious linear evaluation are generated, thus making the protocol more efficient. We prove the protocols to have static security in the framework of quantum universal composability. △ Less

Submitted 18 October, 2024; v1 submitted 29 April, 2022; originally announced April 2022.

Comments: 42 pages (34 + 8 as appendix), version accepted for publication in Quantum

Non-equilibrium hot-carrier transport in type-II multiple-quantum wells for solar-cell applications

Authors: H. P. Piyathilaka, R. Sooriyagoda, V. R. Whiteside, T. D. Mishima, M. B. Santos, I. R. Sellers, A. D. Bristow

Abstract: Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier transport. These samples previously exhibit an excitation energy onset of a metastable regime in their short time charge carrier dynamics that potentially improve… ▽ More Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier transport. These samples previously exhibit an excitation energy onset of a metastable regime in their short time charge carrier dynamics that potentially improves their applicability for hot-carrier photovoltaic applications. The transport results illustrate that the AC photoconductivity is larger in the dynamic regime corresponding to the metastability as a result of higher excitation photocarrier densities. In this excitation regime, the AC photoconductivity is accompanied by slightly lower carrier mobility, arising from the plasma-like nature of carriers scattered by Auger recombination. Outside of this regime, higher mobility is observed as a result of a lower excitation density that is more readily achievable by solar concentration. Additionally, at ambient temperatures, more scattering events are accompanied by slightly lower mobility, but the excitation dependence indicates that this is accompanied by an ambipolar diffusion length that is greater than half a micron. These transport properties are consistent with good quality inorganic elemental and III-V semiconductor solar cells and far exceed those of novel materials. The transport results complement the dynamics observed in type-II InAs/AlAsSb and can guide the design of hot-carrier solar cells based on these and related materials. △ Less

Submitted 11 April, 2022; v1 submitted 29 December, 2021; originally announced December 2021.

Comments: 7 pages, 5 figures, journal preprint

Wigner solids of domain wall skyrmions

Authors: Kaifeng Yang, Katsumi Nagase, Yoshiro Hirayama, Tetsuya D. Mishima, Michael B. Santos, Hongwu Liu

Abstract: Detection and characterization of a different type of topological excitations, namely the domain wall (DW) skyrmion, has received increasing attention because the DW is ubiquitous from condensed matter to particle physics and cosmology. Here we present experimental evidence for the DW skyrmion as the ground state stabilized by long-range Coulomb interactions in a quantum Hall ferromagnet. We devel… ▽ More Detection and characterization of a different type of topological excitations, namely the domain wall (DW) skyrmion, has received increasing attention because the DW is ubiquitous from condensed matter to particle physics and cosmology. Here we present experimental evidence for the DW skyrmion as the ground state stabilized by long-range Coulomb interactions in a quantum Hall ferromagnet. We develop an alternative approach using nonlocal resistance measurements together with a local NMR probe to measure the effect of low-current-induced dynamic nuclear polarization and thus to characterize the DW under equilibrium conditions. The dependence of nuclear spin relaxation in the DW on temperature, filling factor, quasiparticle localization, and effective magnetic fields allows us to interpret this ground state and its possible phase transitions in terms of Wigner solids of the DW skyrmion. These results demonstrate the importance of studying the intrinsic properties of quantum states that has been largely overlooked. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 42 pages, 16 figures, 1 table

Journal ref: Nat.Commun.12, 6006 (2021)

Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells

Authors: Herath P. Piyathilaka, Rishmali Sooriyagoda, Hamidreza Esmaielpour, Vincent R. Whiteside, Tetsuya D. Mishima, Michael B. Santos, Ian R. Sellers, Alan D. Bristow

Abstract: A type-II InAs/AlAs$_{0.16}$Sb$_{0.84}$ multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is charact… ▽ More A type-II InAs/AlAs$_{0.16}$Sb$_{0.84}$ multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is characterized by a multi-rise, multi-decay function that captures long-lived decay times and a metastable state of for an excess-photon energy of $>100$ meV. For sufficient excess-photon energy, excitation of the metastable state is followed by a transition to the long-lived states. Excitation dependence of the long-lived states map onto a near-direct band gap ($E{_g}$) density of states with an Urbach tail below $E{_g}$. As temperature increases, the long-lived decay times increase $<E{_g}$, due to the increased phonon interaction of the unintentional defect states, and by phonon stabilization of the hot carriers $>E{_g}$. Additionally, Auger (and/or trap-assisted Auger) scattering above the onset of the plateau may also contribute to longer hot-carrier lifetimes. Meanwhile, the initial decay component shows strong dependence on excitation energy and temperature, reflecting the complicated initial transfer of energy between valence-band and defect states, indicating methods to further prolong hot carriers for technological applications. △ Less

Submitted 14 March, 2021; v1 submitted 5 March, 2021; originally announced March 2021.

Nonlinear optical conductivity of a two-band crystal I

Authors: D. J. Passos, G. B. Ventura, J. M. B. Lopes dos Santos, J. M. Viana Parente Lopes

Abstract: The structure of the electronic nonlinear optical conductivity is elucidated in a detailed study of the time-reversal symmetric two-band model. The nonlinear conductivity is decomposed as a sum of contributions related with different regions of the First Brillouin Zone, defined by single or multiphoton resonances. All contributions are written in terms of the same integrals, which contain all info… ▽ More The structure of the electronic nonlinear optical conductivity is elucidated in a detailed study of the time-reversal symmetric two-band model. The nonlinear conductivity is decomposed as a sum of contributions related with different regions of the First Brillouin Zone, defined by single or multiphoton resonances. All contributions are written in terms of the same integrals, which contain all information specific to the particular model under study. In this way, ready-to-use formulas are provided that reduce the often tedious calculations of the second and third order optical conductivity to the evaluation of a small set of similar integrals. In the scenario where charge carriers are present prior to optical excitation, Fermi surface contributions must also be considered and are shown to have an universal frequency dependence, tunable by doping. General characteristics are made evident in this type of resonance-based analysis: the existence of step functions that determine the chemical potential dependence of electron-hole symmetric insulators; the determination of the imaginary part by Hilbert transforms, simpler than those of the nonlinear Kramers-Krönig relations; the absence of Drude peaks in the diagonal elements of the second order conductivity, among others. As examples, analytical expressions are derived for the nonlinear conductivities of some simple systems: a very basic model of direct gap semiconductors and the Dirac fermions of monolayer graphene. △ Less

Submitted 15 February, 2021; originally announced February 2021.

A Polynomial Approach to the Spectrum of Dirac-Weyl Polygonal Billiards

Authors: M. F. C. Martins Quintela, J. M. B. Lopes dos Santos

Abstract: The Schrödinger equation in a square or rectangle with hard walls is solved in every introductory quantum mechanics course. Solutions for other polygonal enclosures only exist in a very restricted class of polygons, and are all based on a result obtained by Lamé in 1852. Any enclosure can, of course, be addressed by finite element methods for partial differential equations. In this paper, we prese… ▽ More The Schrödinger equation in a square or rectangle with hard walls is solved in every introductory quantum mechanics course. Solutions for other polygonal enclosures only exist in a very restricted class of polygons, and are all based on a result obtained by Lamé in 1852. Any enclosure can, of course, be addressed by finite element methods for partial differential equations. In this paper, we present a variational method to approximate the low-energy spectrum and wave-functions for arbitrary convex polygonal enclosures, developed initially for the study of vibrational modes of plates. In view of the recent interest in the spectrum of quantum dots of two dimensional materials, described by effective models with massless electrons, we extend the method to the Dirac-Weyl equation for a spin-1/2 fermion confined in a quantum billiard of polygonal shape, with different types of boundary conditions. We illustrate the method's convergence in cases where the spectrum in known exactly and apply it to cases where no exact solution exists. △ Less

Submitted 31 July, 2020; originally announced July 2020.

Comments: 17 pages, 10 figures

Journal ref: J. Phys.: Condens. Matter 33 035901 (2020)

Second order divergence in the third order DC response of a cold semiconductor

Authors: G. B. Ventura, D. J. Passos, J. M. Viana Parente Lopes, J. M. B. Lopes dos Santos

Abstract: In this work, we present the analytical expression for the second order divergence in the third order DC response of a cold semiconductor, which can be probed by different electric field setups. Results from this expression were then compared, for the response of the gapped graphene monolayer, with numerical results from a velocity gauge calculation of the third order conductivity. The good agreem… ▽ More In this work, we present the analytical expression for the second order divergence in the third order DC response of a cold semiconductor, which can be probed by different electric field setups. Results from this expression were then compared, for the response of the gapped graphene monolayer, with numerical results from a velocity gauge calculation of the third order conductivity. The good agreement between the two validates our analytical expression. △ Less

Submitted 4 April, 2020; originally announced April 2020.

Comments: 8 pages, 4 figures

First-Order Gauge Invariant Generalization of the Quantum Rigid Rotor

Authors: Suzicleide L. de Oliveira, Camila M. B. Santos, Ronaldo Thibes

Abstract: A first-order gauge invariant formulation for the two-dimensional quantum rigid rotor is long known in the theoretical physics community as an isolated peculiar model. Parallel to that fact, the longstanding constraints abelianization problem, aiming at the conversion from second to first class systems for quantization purposes, has been approached a number of times in the literature with a handfu… ▽ More A first-order gauge invariant formulation for the two-dimensional quantum rigid rotor is long known in the theoretical physics community as an isolated peculiar model. Parallel to that fact, the longstanding constraints abelianization problem, aiming at the conversion from second to first class systems for quantization purposes, has been approached a number of times in the literature with a handful of different forms and techniques and still continues to be a source of lively and interesting discussions. Connecting these two points, we develop a new systematic method for converting second class systems to first class ones, valid for a class of systems encompassing the quantum rigid rotor as a special case. In particular the gauge invariance of the quantum rigid rotor is fully clarified and generalized in the context of arbitrary translations along the radial momentum direction. Our method differs substantially from previous ones as it does not rely neither on the introduction of new auxiliary variables nor on the a priori interpretation of the second class constraints as coming from a gauge-fixing process. △ Less

Submitted 15 November, 2019; originally announced November 2019.

Pump-probe nuclear spin relaxation study of the quantum Hall ferromagnet at filling factor nu = 2

Authors: K. F. Yang, M. M. Uddin, K. Nagase, T. D. Mishima, M. B. Santos, Y. Hirayama, Z. N. Yang, H. W. Liu

Abstract: The nuclear spin-lattice relaxation time T1 of the nu = 2 quantum Hall ferromagnet (QHF) formed in a gate-controlled InSb two-dimensional electron gas has been characterized using a pump-probe technique. In contrast to a long T1 of quantum Hall states around nu = 1 that possesses a Korringa-type temperature dependence, the temperature-independent short T1 of the nu = 2 QHF suggests the presence of… ▽ More The nuclear spin-lattice relaxation time T1 of the nu = 2 quantum Hall ferromagnet (QHF) formed in a gate-controlled InSb two-dimensional electron gas has been characterized using a pump-probe technique. In contrast to a long T1 of quantum Hall states around nu = 1 that possesses a Korringa-type temperature dependence, the temperature-independent short T1 of the nu = 2 QHF suggests the presence of low energy collective spin excitations in a domain wall. Furthermore, T1 of this ferromagnetic state is also found to be filling- and current-independent. The interpretation of these results as compared to the T1 properties of other QHFs is discussed in terms of the domain wall skyrmion, which will lead to a better understanding of the QHF. △ Less

Submitted 18 August, 2019; v1 submitted 18 March, 2019; originally announced March 2019.

Comments: 19 pages, 5 figures, including Supplementary Material

Journal ref: New J. Phys. 21, 083004(2019)

Global Delocalization Transition in the de Moura-Lyra Model

Authors: J. P. Santos Pires, N. A. Khan, J. M. Viana Parente Lopes, J. M. B. Lopes dos Santos

Abstract: The possibility of having a delocalization transition in the 1D de Moura-Lyra class of models (having a power-spectrum $\propto q^{-α})$ has been the object of a long standing discussion in the literature, filled with ambiguities. In this letter, we report the first numerical evidences that such a transition happens at $α=1$, where the localization length (measured from the scaling of the conducta… ▽ More The possibility of having a delocalization transition in the 1D de Moura-Lyra class of models (having a power-spectrum $\propto q^{-α})$ has been the object of a long standing discussion in the literature, filled with ambiguities. In this letter, we report the first numerical evidences that such a transition happens at $α=1$, where the localization length (measured from the scaling of the conductance) is shown to diverge as $(1-α)^{-1}$. The persistent finite-size scaling of the data is shown to be caused by a very slow convergence of the nearest-neighbor correlator to its infinite-size limit, and controlled by the choice of a proper scaling parameter. This last conclusion leads to the re-interpretation of the localization in these models to be caused by an effective Anderson uncorrelated model at small length-scales. Finally, the numerical results are confirmed by analytical perturbative calculations which are built on previous work. △ Less

Submitted 16 May, 2019; v1 submitted 6 March, 2019; originally announced March 2019.

Comments: 6 pages, 4 figures Submitted to Physical Review B on the 25th of March 2019

Journal ref: Physical Review B 99, 205148 (2019)

MIRA: A Computational Neuro-Based Cognitive Architecture Applied to Movie Recommender Systems

Authors: Mariana B. Santos, Amanda M. Lima, Lucas A. Silva, Felipe S. Vargas, Guilherme A. Wachs-Lopes, Paulo S. Rodrigues

Abstract: The human mind is still an unknown process of neuroscience in many aspects. Nevertheless, for decades the scientific community has proposed computational models that try to simulate their parts, specific applications, or their behavior in different situations. The most complete model in this line is undoubtedly the LIDA model, proposed by Stan Franklin with the aim of serving as a generic computat… ▽ More The human mind is still an unknown process of neuroscience in many aspects. Nevertheless, for decades the scientific community has proposed computational models that try to simulate their parts, specific applications, or their behavior in different situations. The most complete model in this line is undoubtedly the LIDA model, proposed by Stan Franklin with the aim of serving as a generic computational architecture for several applications. The present project is inspired by the LIDA model to apply it to the process of movie recommendation, the model called MIRA (Movie Intelligent Recommender Agent) presented percentages of precision similar to a traditional model when submitted to the same assay conditions. Moreover, the proposed model reinforced the precision indexes when submitted to tests with volunteers, proving once again its performance as a cognitive model, when executed with small data volumes. Considering that the proposed model achieved a similar behavior to the traditional models under conditions expected to be similar for natural systems, it can be said that MIRA reinforces the applicability of LIDA as a path to be followed for the study and generation of computational agents inspired by neural behaviors. △ Less

Submitted 27 February, 2019; v1 submitted 25 February, 2019; originally announced February 2019.

In-Plane Magnetoconductance Mapping of InSb Quantum Wells

Authors: J. T. Mlack, K. S. Wickramasinghe, T. D. Mishima, M. B. Santos, C. M. Marcus

Abstract: In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. T… ▽ More In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. The in-plane WAL suppression is found to be dominated by the Zeeman effect and to show a small crystal-orientation-dependent anistropy in disorder and g-factor. These measurements show the utility of multi-directional measurement of magnetoconductance in analyzing material properties. △ Less

Submitted 20 February, 2019; originally announced February 2019.

Report number: NBI QDEV 2019

A study of the nonlinear optical response of the plain graphene and gapped graphene monolayers beyond the Dirac approximation

Authors: G. B. Ventura, D. J. Passos, J. M. Viana Parente Lopes, J. M. B. Lopes dos Santos

Abstract: In this work, we present numerical results for the second and third order conductivities of the plain graphene and gapped graphene monolayers associated with the second and third harmonic generation, the optical rectification and the optical Kerr effect. The frequencies considered here range from the microwave to the ultraviolet portion of the spectrum, the latter end of which had not yet been stu… ▽ More In this work, we present numerical results for the second and third order conductivities of the plain graphene and gapped graphene monolayers associated with the second and third harmonic generation, the optical rectification and the optical Kerr effect. The frequencies considered here range from the microwave to the ultraviolet portion of the spectrum, the latter end of which had not yet been studied. These calculations are performed in the velocity gauge and directly address the components of the conductivity tensor. In the velocity gauge, the radiation field is represented by a power series in the vector potential, and we discuss a very efficient way of calculating its coefficients in the context of tight-binding models. △ Less

Submitted 4 February, 2020; v1 submitted 12 February, 2019; originally announced February 2019.

Comments: 13 pages, 19 figures

Spectral Functions of One-Dimensional Systems with Correlated Disorder

Authors: N. A. Khan, J. M. Viana Parente Lopes, J. P. Santos Pires, J. M. B. Lopes dos Santos

Abstract: We investigate the spectral function of Bloch states in an one-dimensional tight-binding non-interacting chain with two different models of static correlated disorder, at zero temperature. We report numerical calculations of the single-particle spectral function based on the Kernel Polynomial Method, which has an $\mathcal{O}(N)$ computational complexity. These results are then confirmed by analyt… ▽ More We investigate the spectral function of Bloch states in an one-dimensional tight-binding non-interacting chain with two different models of static correlated disorder, at zero temperature. We report numerical calculations of the single-particle spectral function based on the Kernel Polynomial Method, which has an $\mathcal{O}(N)$ computational complexity. These results are then confirmed by analytical calculations, where precise conditions were obtained for the appearance of a classical limit in a single-band lattice system. Spatial correlations in the disordered potential give rise to non-perturbative spectral functions shaped as the probability distribution of the random on-site energies, even at low disorder strengths. In the case of disordered potentials with an algebraic power-spectrum, $\propto\left|k\right|^{-α}$, we show that the spectral function is not self-averaging for $α\geq1$. △ Less

Submitted 31 January, 2019; v1 submitted 18 June, 2018; originally announced June 2018.

Comments: 27 Pages with 10 Figures

Journal ref: Journal of Physics: Condensed Matter 31, 175501 (2019)

Nonlinear optical responses of crystalline systems: Results from a velocity gauge analysis

Authors: D. J. Passos, G. B. Ventura, J. M. Viana Parente Lopes, J. M. B. Lopes dos Santos, N. M. R. Peres

Abstract: In this work, the difficulties inherent to perturbative calculations in the velocity gauge are addressed. In particular, it is shown how calculations of nonlinear optical responses in the independent particle approximation can be done to any order and for any finite band model. The procedure and advantages of the velocity gauge in such calculations are described. The addition of a phenomenological… ▽ More In this work, the difficulties inherent to perturbative calculations in the velocity gauge are addressed. In particular, it is shown how calculations of nonlinear optical responses in the independent particle approximation can be done to any order and for any finite band model. The procedure and advantages of the velocity gauge in such calculations are described. The addition of a phenomenological relaxation parameter is also discussed. As an illustration, the nonlinear optical response of monolayer graphene is numerically calculated using the velocity gauge. △ Less

Submitted 5 March, 2018; v1 submitted 13 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. B 97, 235446 (2018)

Role of chiral quantum Hall edge states in nuclear spin polarization

Authors: K. F. Yang, K. Nagase, Y. Hirayama, T. D. Mishima, M. B. Santos, H. W. Liu

Abstract: Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly-sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and in particular the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on th… ▽ More Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly-sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and in particular the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on the nuclear spin polarization. A side-by-side comparison of the RDNMR signals from Hall bar and Corbino disk configurations allows us to distinguish the contributions of bulk and edge states to DNP in QHF. The unidirectional current flow along chiral edge states makes the polarization robust to thermal fluctuations at high temperatures and makes it possible to observe a reciprocity principle of the RDNMR response. These findings help us better understand complex NMR responses in QHF, which has important implications for the development of RDNMR techniques. △ Less

Submitted 22 April, 2017; originally announced April 2017.

Comments: 34 pages,10 figures

Journal ref: Nature Communications 8, 15084(2017)

Gauge covariances and nonlinear optical responses

Authors: G. B. Ventura, D. J. Passos, J. M. B. Lopes dos Santos, J. M. Viana Parente Lopes, N. M . R. Peres

Abstract: The formalism of the reduced density matrix is pursued in both length and velocity gauges of the perturbation to the crystal Hamiltonian. The covariant derivative is introduced as a convenient representation of the position operator. This allow us to write compact expressions for the reduced density matrix in any order of the perturbation which simplifies the calculations of nonlinear optical resp… ▽ More The formalism of the reduced density matrix is pursued in both length and velocity gauges of the perturbation to the crystal Hamiltonian. The covariant derivative is introduced as a convenient representation of the position operator. This allow us to write compact expressions for the reduced density matrix in any order of the perturbation which simplifies the calculations of nonlinear optical responses; as an example, we compute the first and third order contributions of the monolayer graphene. Expressions obtained in both gauges share the same formal structure, allowing a comparison of the effects of truncation to a finite set of bands. This truncation breaks the equivalence between the two approaches: its proper implementation can be done directly in the expressions derived in the length gauge, but require a revision of the equations of motion of the reduced density matrix in the velocity gauge. △ Less

Submitted 30 June, 2017; v1 submitted 22 March, 2017; originally announced March 2017.

Comments: 13 pages, 1 figure

Journal ref: Phys. Rev. B 96, 035431 (2017)

Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

Authors: R. Islam, M. M. Uddin, M. Mofazzal Hossain, M. B. Santos, M. A. Matin, Y. Hirayama

Abstract: The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and two dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42 m2V-1s-1 at Vg= 0V, a small pinch off gate voltage (Vp) of -0.25V… ▽ More The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and two dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42 m2V-1s-1 at Vg= 0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of 4.94 S/mm and a drain current density of more than 6.04 A/mm. A short-circuit current-gain cut-off frequency (fT) of 374 GHz and a maximum oscillation frequency (fmax) of 645 GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications. △ Less

Submitted 26 June, 2016; originally announced June 2016.

Comments: 17 pages

Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells: a practical route to hot carrier solar cells

Authors: H. Esmaielpour, V. R. Whiteside, J. Tang, S. Vijeyaragunathan, T. D. Mishima, S. Cairns, M. B. Santos, B. Wang, I. R. Sellers

Abstract: InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elev… ▽ More InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elevated temperatures. At temperatures below 90 K photoluminescence measurements are consistent with type-I quantum wells that exhibit hole localization associated with alloy/interface fluctuations. At elevated temperatures hole delocalization reveals the true type-II band alignment; where it is observed that inhibited radiative recombination due to the spatial separation of the charge carriers dominates hot carrier relaxation. This decoupling of phonon-mediated relaxation results in robust hot carriers at higher temperatures even at lower excitation powers. These results indicate type-II quantum wells offer potential as practical hot carrier systems. △ Less

Submitted 30 October, 2015; originally announced November 2015.

Comments: 7 pages, 6 figures, submitted to "Progress in Photovoltaics: Research and Applications"

Journal ref: Progress in Photovoltaics: Research and Applications 24 (2016) 591-599

Gate depletion of an InSb two-dimensional electron gas

Authors: M. M. Uddin, H. W. Liu, K. F. Yang, K. Nagase, K. Sekine, C. K. Gaspe, T. D. Mishima, M. B. Santos, Y. Hirayama

Abstract: We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface… ▽ More We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V). △ Less

Submitted 18 September, 2013; originally announced September 2013.

Comments: 12 pages, 3 figures

Journal ref: Appl.Phys.Lett.103,123502(2013)

Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

Authors: M. M. Uddin, H. W. Liu, K. F. Yang, K. Nagase, T. D. Mishima, M. B. Santos, Y. Hirayama

Abstract: We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density o… ▽ More We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5x1014 m-2V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrodinger-Poisson simulation and two-carrier model. △ Less

Submitted 6 December, 2012; originally announced December 2012.

Comments: 11 pages,3 figures

Journal ref: Appl Phys Lett 101,233503(2012)

Scattering by linear defects in graphene: a tight-binding approach

Authors: J. N. B. Rodrigues, N. M. R. Peres, J. M. B. Lopes dos Santos

Abstract: We develop an analytical scattering formalism for computing the transmittance through periodic defect lines within the tight-binding model of graphene. We first illustrate the method with a relatively simple case, the pentagon-only defect line. Afterwards, more complex defect lines are treated, namely the zz(558) and the zz(5757) ones. The formalism developed, only uses simple tight-binding concep… ▽ More We develop an analytical scattering formalism for computing the transmittance through periodic defect lines within the tight-binding model of graphene. We first illustrate the method with a relatively simple case, the pentagon-only defect line. Afterwards, more complex defect lines are treated, namely the zz(558) and the zz(5757) ones. The formalism developed, only uses simple tight-binding concepts, reducing the problem to matrix manipulations which can be easily worked out by any computational algebraic calculator. △ Less

Submitted 16 July, 2013; v1 submitted 31 October, 2012; originally announced October 2012.

Comments: 36 pages, 15 figures

Journal ref: J. Phys.: Condens. Matter 25, 075303 (2013)

Scattering by linear defects in graphene: a continuum approach

Authors: J. N. B. Rodrigues, N. M. R. Peres, J. M. B. Lopes dos Santos

Abstract: We study the low-energy electronic transport across periodic extended defects in graphene. In the continuum low-energy limit, such defects act as infinitesimally thin stripes separating two regions where Dirac Hamiltonian governs the low-energy phenomena. The behavior of these systems is defined by the boundary condition imposed by the defect on the massless Dirac fermions. We demonstrate how this… ▽ More We study the low-energy electronic transport across periodic extended defects in graphene. In the continuum low-energy limit, such defects act as infinitesimally thin stripes separating two regions where Dirac Hamiltonian governs the low-energy phenomena. The behavior of these systems is defined by the boundary condition imposed by the defect on the massless Dirac fermions. We demonstrate how this low-energy boundary condition can be computed from the tight-binding model of the defect line. For simplicity we consider defect lines oriented along the zigzag direction, which requires the consideration of only one copy of Dirac equation. Three defect lines of this kind are studied and shown to be mappable between them: the pentagon-only, the zz(558) and the zz(5757) defect lines. In addition, in this same limit, we calculate the conductance across such defect lines with size L, and find it to be proportional to k_FL at low temperatures. △ Less

Submitted 9 October, 2012; v1 submitted 3 August, 2012; originally announced August 2012.

Comments: Major revision relative to version v1; http://prb.aps.org/abstract/PRB/v86/i21/e214206

Journal ref: Phys. Rev. B 86, 214206 (2012)

Continuum Model of the Twisted Bilayer

Authors: J. M. B. Lopes dos Santos, N. M. R. Peres, A. H. Castro Neto

Abstract: The continuum model of the twisted graphene bilayer (Phys. Rev. Lett. 99, 256802, 2007) is extended to include all types of commensurate structures. The essential ingredient of the model, the Fourier components of the spatially modulated hopping amplitudes, can be calculated analytically, for any type of commensurate structures in the low twist angle limit. We show that the Fourier components that… ▽ More The continuum model of the twisted graphene bilayer (Phys. Rev. Lett. 99, 256802, 2007) is extended to include all types of commensurate structures. The essential ingredient of the model, the Fourier components of the spatially modulated hopping amplitudes, can be calculated analytically, for any type of commensurate structures in the low twist angle limit. We show that the Fourier components that could give rise to a gap in the SE-even structures discussed by Mele (Phys. Rev. B 81, 161405 2010) vanish linearly with angle, whereas the amplitudes that saturate to finite values, as $θ\to0$, ensure that all low angle structures share essentially the same physics. We extend our previous calculations beyond the validity of perturbation theory, to discuss the disappearance of Dirac cone structure at angles below 1^{\circ}. △ Less

Submitted 6 February, 2012; originally announced February 2012.

Comments: 13 pages, 17 figures

Journal ref: Phys. Rev. B 86, 155449 (2012)

Zigzag graphene nanoribbon edge reconstruction with Stone-Wales defects

Authors: J. N. B. Rodrigues, P. A. D. Gonçalves, N. F. G. Rodrigues, R. M. Ribeiro, J. M. B. Lopes dos Santos, N. M. R. Peres

Abstract: In this article, we study zigzag graphene nanoribbons with edges reconstructed with Stone-Wales defects, by means of an empirical (first-neighbor) tight-binding method, with parameters determined by ab-initio calculations of very narrow ribbons. We explore the characteristics of the electronic band structure with a focus on the nature of edge states. Edge reconstruction allows the appearance of a… ▽ More In this article, we study zigzag graphene nanoribbons with edges reconstructed with Stone-Wales defects, by means of an empirical (first-neighbor) tight-binding method, with parameters determined by ab-initio calculations of very narrow ribbons. We explore the characteristics of the electronic band structure with a focus on the nature of edge states. Edge reconstruction allows the appearance of a new type of edge states. They are dispersive, with non-zero amplitudes in both sub-lattices; furthermore, the amplitudes have two components that decrease with different decay lengths with the distance from the edge; at the Dirac points one of these lengths diverges, whereas the other remains finite, of the order of the lattice parameter. We trace this curious effect to the doubling of the unit cell along the edge, brought about by the edge reconstruction. In the presence of a magnetic field, the zero-energy Landau level is no longer degenerate with edge states as in the case of pristine zigzag ribbon. △ Less

Submitted 24 July, 2011; originally announced July 2011.

Comments: 15 pages

Journal ref: Phys. Rev. B 84, 155435 (2011)

Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

Authors: N. M. R. Peres, J. M. B. Lopes dos Santos, A. H. Castro Neto

Abstract: We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples i… ▽ More We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates. △ Less

Submitted 13 June, 2011; v1 submitted 26 May, 2011; originally announced May 2011.

Comments: The version v2 has an extra figure as supplementary information

Journal ref: EuroPhysics Letters, 95 18001 (2011)

Electronic doping of graphene by deposited transition metal atoms

Authors: Jaime E. Santos, Nuno M. R. Peres, Joao M. B. Lopes dos Santos, Antonio H. Castro Neto

Abstract: We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping of graphene can be varied by the application of a gate voltage and such that transport measurements can be performed via the application of a (much smaller) vol… ▽ More We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping of graphene can be varied by the application of a gate voltage and such that transport measurements can be performed via the application of a (much smaller) voltage along the graphene sample, as reported in the work of Pi et al. [Phys. Rev. B 80, 075406 (2009)]. The analysis allows us to explain the thermodynamic properties of the device, such as the level of doping of graphene and the ionisation potential of the metal clusters in terms of the chemical interaction between graphene and the clusters. We are also able, by modelling the metallic clusters as perfect conducting spheres, to determine the scattering potential due to these clusters on the electronic carriers of graphene and hence the contribution of these clusters to the resistivity of the sample. The model presented is able to explain the measurements performed by Pi et al. on Pt-covered graphene samples at the lowest metallic coverages measured and we also present a theoretical argument based on the above model that explains why significant deviations from such a theory are observed at higher levels of coverage. △ Less

Submitted 26 August, 2011; v1 submitted 25 April, 2011; originally announced April 2011.

Comments: 16 pages, 10 figures

Journal ref: Phys. Rev. B 84, 085430 (2011)

Resistively detected nuclear magnetic resonance via a single InSb two-dimensional electron gas at high temperature

Authors: K. F. Yang, H. W. Liu, K. Nagase, T. D. Mishima, M. B. Santos, Y. Hirayama

Abstract: We report on the demonstration of the resistively detected nuclear magnetic resonance (RDNMR) of a single InSb two-dimensional electron gas (2DEG) at elevated temperatures up to 4 K. The RDNMR signal of 115In in the simplest pseudospin quantum Hall ferromagnet triggered by a large direct current shows a peak-dip line shape, where the nuclear relaxation time T1 at the peak and the dip is different… ▽ More We report on the demonstration of the resistively detected nuclear magnetic resonance (RDNMR) of a single InSb two-dimensional electron gas (2DEG) at elevated temperatures up to 4 K. The RDNMR signal of 115In in the simplest pseudospin quantum Hall ferromagnet triggered by a large direct current shows a peak-dip line shape, where the nuclear relaxation time T1 at the peak and the dip is different but almost temperature independent. The large Zeeman, cyclotron, and exchange energy scales of the InSb 2DEG contribute to the persistence of the RDNMR signal at high temperatures. △ Less

Submitted 10 April, 2011; originally announced April 2011.

Comments: 11pages,3figures

Journal ref: Appl.Phys.Lett.98,142109(2011)

Quantum coherent negative bend resistance in InSb mesoscopic structures

Authors: N. Goel, T. Jayasekera, K. Mullen, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Abstract: Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed in devices of channel widths 0.2 or 0.5 μm. We have improved upon the existing implementations of R-matrix theory in device physics by introducing boundary condi… ▽ More Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed in devices of channel widths 0.2 or 0.5 μm. We have improved upon the existing implementations of R-matrix theory in device physics by introducing boundary conditions that dramatically speed convergence. By comparison with R-matrix calculations, we show that the experimental observations are consistent with quantum coherent transport. △ Less

Submitted 11 March, 2011; originally announced March 2011.

Nonlinear magnetic field dependence of spin polarization in high density two-dimensional electron systems

Authors: K. F. Yang, H. W. Liu, T. D. Mishima, M. B. Santos, K. Nagase, Y. Hirayama

Abstract: The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B nonlinearity results in a difference in spin susceptibility between its real value Xs and Xgm ~ m*g*(m* and g* are the effective mass and g factor, respectively) as rou… ▽ More The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B nonlinearity results in a difference in spin susceptibility between its real value Xs and Xgm ~ m*g*(m* and g* are the effective mass and g factor, respectively) as routinely used in experiments. We demonstrate that such a P-B nonlinearity originates from the linearly P-dependent g* due to the exchange coupling of electrons rather than from the electron correlation as predicted for the low-density 2DES. △ Less

Submitted 17 August, 2011; v1 submitted 7 June, 2010; originally announced June 2010.

Comments: 14 pages, 4 figures

Journal ref: New Journal of Physics 13 (2011) 083010

Bilayer graphene: gap tunability and edge properties

Authors: Eduardo V. Castro, N. M. R. Peres, J. M. B. Lopes dos Santos, F. Guinea, A. H. Castro Neto

Abstract: Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe re… ▽ More Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy -- the Fermi level of the undoped system -- has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system. △ Less

Submitted 28 April, 2010; originally announced April 2010.

Comments: 8 pages, 3 fugures, Proceedings of the International Conference on Theoretical Physics: Dubna-Nano2008

Journal ref: J. Phys.: Conf. Ser. 129, 012002 (2008)

Dynamic Nuclear Polarization and Nuclear Magnetic Resonance in the Simplest Pseudospin Quantum Hall Ferromagnet

Authors: H. W. Liu, K. F. Yang, T. D. Mishima, M. B. Santos, Y. Hirayama

Abstract: We present dynamic nuclear polarization (DNP) in the simplest pseudospin quantum Hall ferromagnet (QHF) of an InSb two-dimensional electron gas with a large g factor using tilted magnetic fields. The DNP-induced amplitude change of a resistance spike of the QHF at large current enables observation of the resistively detected nuclear magnetic resonance of the high nuclear spin isotope 115In with ni… ▽ More We present dynamic nuclear polarization (DNP) in the simplest pseudospin quantum Hall ferromagnet (QHF) of an InSb two-dimensional electron gas with a large g factor using tilted magnetic fields. The DNP-induced amplitude change of a resistance spike of the QHF at large current enables observation of the resistively detected nuclear magnetic resonance of the high nuclear spin isotope 115In with nine quadrupole splittings. Our results demonstrate the importance of domain structures in the DNP process. The nuclear spin relaxation time T1 in this QHF was relatively short (~ 120 s), and almost temperature independent. △ Less

Submitted 24 December, 2010; v1 submitted 16 February, 2010; originally announced February 2010.

Comments: 16 pages, 4 figures, PRB rapid communications, selected as an Editors' suggestion

Journal ref: Phy. Rev. B 82, 241304 (R) (2010)

Observation of Van Hove singularities in twisted graphene layers

Authors: Guohong Li, A. Luican, J. M. B. Lopes dos Santos, A. H. Castro Neto, A. Reina, J. Kong, E. Y. Andrei

Abstract: Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this condition is difficult to control. In the case of single-layer graphene, the singularity is too far from the Fermi energy and hence difficult to reach with standa… ▽ More Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this condition is difficult to control. In the case of single-layer graphene, the singularity is too far from the Fermi energy and hence difficult to reach with standard doping and gating techniques. Here we report the observation of low-energy Van Hove singularities in twisted graphene layers seen as two pronounced peaks in the density of states measured by scanning tunneling spectroscopy. We demonstrate that a rotation between stacked graphene layers can generate Van Hove singularities, which can be brought arbitrarily close to the Fermi energy by varying the angle of rotation. This opens intriguing prospects for Van Hove singularity engineering of electronic phases. △ Less

Submitted 10 December, 2009; originally announced December 2009.

Comments: 21 pages 5 figures

Journal ref: Nature Physics 6, 109 ( 2010)

Emergence of robust gaps in 2D antiferromagnets via additional spin-1/2 probes

Authors: A. Ferreira, J. Viana Lopes, J. M. B. Lopes dos Santos

Abstract: We study the capacity of antiferromagnetic lattices of varying geometries to entangle two additional spin-1/2 probes. Analytical modeling of the Quantum Monte Carlo data shows the appearance of a robust gap, allowing a description of entanglement in terms of probe-only states, even in cases where the coupling to the probes is larger than the gap of the spin lattice and cannot be treated perturbati… ▽ More We study the capacity of antiferromagnetic lattices of varying geometries to entangle two additional spin-1/2 probes. Analytical modeling of the Quantum Monte Carlo data shows the appearance of a robust gap, allowing a description of entanglement in terms of probe-only states, even in cases where the coupling to the probes is larger than the gap of the spin lattice and cannot be treated perturbatively. We find a considerable enhancement of the temperature at which probe entanglement disappears as we vary the geometry of the bus and the coupling to the probes. In particular, the square Heisenberg antiferromagnet exhibits the best thermal robustness of all systems, whereas the three-leg ladder chain shows the best performance in the natural quantum ground state. △ Less

Submitted 30 August, 2010; v1 submitted 1 June, 2009; originally announced June 2009.

Comments: 12 pages, 10 figures, 1 table + appendices (published version)

Journal ref: Phys. Rev. A 82, 022320 (2010)

Lattice Green's function approach to the solution of the spectrum of an array of quantum dots and its linear conductance

Authors: N. M. R. Peres, T. Stauber, J. M. B. Lopes dos Santos

Abstract: In this paper we derive general relations for the band-structure of an array of quantum dots and compute its transport properties when connected to two perfect leads. The exact lattice Green's functions for the perfect array and with an attached adatom are derived. The expressions for the linear conductance for the perfect array as well as for the array with a defect are presented. The calculati… ▽ More In this paper we derive general relations for the band-structure of an array of quantum dots and compute its transport properties when connected to two perfect leads. The exact lattice Green's functions for the perfect array and with an attached adatom are derived. The expressions for the linear conductance for the perfect array as well as for the array with a defect are presented. The calculations are illustrated for a dot made of three atoms. The results derived here are also the starting point to include the effect of electron-electron and electron-phonon interactions on the transport properties of quantum dot arrays. Different derivations of the exact lattice Green's functions are discussed. △ Less

Submitted 12 January, 2009; originally announced January 2009.

Journal ref: Physical Review B 79, 035107 (2009)

Dirac electrons in graphene-based quantum wires and quantum dots

Authors: N. M. R. Peres, J. N. B. Rodrigues, T. Stauber, J. M. B. Lopes dos Santos

Abstract: In this paper we analyse the electronic properties of Dirac electrons in finite-size ribbons and in circular and hexagonal quantum dots made of graphene. In this paper we analyse the electronic properties of Dirac electrons in finite-size ribbons and in circular and hexagonal quantum dots made of graphene. △ Less

Submitted 27 October, 2008; originally announced October 2008.

Comments: Contribution for J. Phys.: Cond. Mat. special issue on graphene physics

Journal ref: J. Phys.: Condens. Matter 21, 344202 (2009)

Substitutional disorder and charge localization in manganites

Authors: Eduardo V. Castro, J. M. B. Lopes dos Santos

Abstract: In the manganites $RE_{1-x}AE_{x}$MnO$_{3}$ ($RE$ and $AE$ being rare-earth and alkaline-earth elements, respectively) the random distribution of $RE^{3+}$ and $AE^{2+}$ induces random, but correlated, shifts of site energies of charge carriers in the Mn sites. We consider a realistic model of this diagonal disorder, in addition to the double-exchange hopping disorder, and investigate the metal-… ▽ More In the manganites $RE_{1-x}AE_{x}$MnO$_{3}$ ($RE$ and $AE$ being rare-earth and alkaline-earth elements, respectively) the random distribution of $RE^{3+}$ and $AE^{2+}$ induces random, but correlated, shifts of site energies of charge carriers in the Mn sites. We consider a realistic model of this diagonal disorder, in addition to the double-exchange hopping disorder, and investigate the metal-insulator transition as a function of temperature, across the paramagnetic-ferromagnetic line, and as a function of doping $x$. Contrary to previous results, we find that values of parameters, estimated from the electronic structure of the manganites, are not incompatible with the possibility of a disorder induced metal to insulator transition accompanying the ferromagnetic to paramagnetic transition at intermediate doping ($x\sim0.2-0.4$). These findings indicate clearly that substitutional disorder has to be considered as an important effect when addressing the colossal magnetoresistance properties of manganites. △ Less

Submitted 5 February, 2010; v1 submitted 12 September, 2008; originally announced September 2008.

Comments: 4 pages, 2 figures (published version)

Journal ref: J. Phys.: Condens. Matter 22 (2010) 075601

Electronic properties of a biased graphene bilayer

Authors: Eduardo V. Castro, K. S. Novoselov, S. V. Morozov, N. M. R. Peres, J. M. B. Lopes dos Santos, Johan Nilsson, F. Guinea, A. K. Geim, A. H. Castro Neto

Abstract: We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compare… ▽ More We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$. △ Less

Submitted 28 April, 2010; v1 submitted 21 July, 2008; originally announced July 2008.

Comments: 15 pages, 9 figures, published shorter version

Journal ref: J. Phys.: Condens. Matter 22, 175503 (2010)

Dynamics of Photo-excited Spins in InSb Based Quantum Wells

Authors: K. Nontapot, R. N. Kini, B. Spencer, G. A. Khodaparast, N. Goel, S. J. Chung, T. D. Mishima, M. B. Santos

Abstract: We report time resolved measurements of spin relaxation in doped and undoped InSb quantum wells using degenerate and two-color magneto-optical Kerr effect techniques. We observed that the photo-excited spin dynamics are strongly influenced by laser excitation fluence and the doping profile of the samples. In the low fluence regime, an oscillatory pattern was observed at low temperatures ($\leq$… ▽ More We report time resolved measurements of spin relaxation in doped and undoped InSb quantum wells using degenerate and two-color magneto-optical Kerr effect techniques. We observed that the photo-excited spin dynamics are strongly influenced by laser excitation fluence and the doping profile of the samples. In the low fluence regime, an oscillatory pattern was observed at low temperatures ($\leq$ 77 K) in the samples with an asymmetric doping profile which might be attributed to the quasi-collision-free spin relaxation regime. Our measurements also suggest the influence of the barrier materials (Al$_{x}$In$_{1-x}$Sb) on the spin relaxation in these material systems. △ Less

Submitted 16 July, 2008; originally announced July 2008.

Localized States at Zigzag Edges of Multilayer Graphene and Graphite Steps

Authors: Eduardo V. Castro, N. M. R. Peres, J. M. B. Lopes dos Santos

Abstract: We report the existence of zero energy surface states localized at zigzag edges of $N$-layer graphene. Working within the tight-binding approximation, and using the simplest nearest-neighbor model, we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in multilayer graphene can be divided into three families: (i) states l… ▽ More We report the existence of zero energy surface states localized at zigzag edges of $N$-layer graphene. Working within the tight-binding approximation, and using the simplest nearest-neighbor model, we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in multilayer graphene can be divided into three families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene; (ii) states with finite amplitude over the two last, or the two first layers of the stack, equivalent to surface states in bilayer graphene; (iii) states with finite amplitude over three consecutive layers. Multilayer graphene edge states are shown to be robust to the inclusion of the next nearest-neighbor interlayer hopping. We generalize the edge state solution to the case of graphite steps with zigzag edges, and show that edge states measured through scanning tunneling microscopy and spectroscopy of graphite steps belong to family (i) or (ii) mentioned above, depending on the way the top layer is cut. △ Less

Submitted 10 September, 2008; v1 submitted 14 May, 2008; originally announced May 2008.

Comments: 6 pages, 4 figures

Journal ref: Europhys. Lett. 84, 17001 (2008)

Double Exchange Model at Low Densities: Magnetic Polarons and Coulomb Suppressed Phase Separation

Authors: Vitor M. Pereira, J. M. B. Lopes dos Santos, Antonio H. Castro Neto

Abstract: We consider the double exchange model at very low densities. The conditions for the formation of self-trapped magnetic polarons are analyzed using an independent polaron model. The issue of phase separation in the low density region of the temperature-density phase diagram is discussed. We show how electrostatic and localization effects can lead to the substantial suppression of the phase separa… ▽ More We consider the double exchange model at very low densities. The conditions for the formation of self-trapped magnetic polarons are analyzed using an independent polaron model. The issue of phase separation in the low density region of the temperature-density phase diagram is discussed. We show how electrostatic and localization effects can lead to the substantial suppression of the phase separated regime. By examining connections between the resulting phase and the polaronic phase, we conclude that they reflect essentially the same physical situation of a ferromagnetic droplet containing one single electron. In the ultra diluted regime, we explore the possible stabilization of a Wigner crystal of magnetic polarons. Our results are compared with the experimental evidence for a polaronic phase in europium hexaboride, and we are able to reproduce the experimental region of stability of the polaronic phase. We further demonstrate that phase-separation is a general feature expected in metallic ferromagnets whose bandwidth depends on the magnetization. △ Less

Submitted 18 April, 2008; originally announced April 2008.

Comments: This paper is a long version of arXiv:cond-mat/0505741

Magnetic structure at zigzag edges of graphene bilayer ribbons

Authors: Eduardo V. Castro, N. M. R. Peres, J. M. B. Lopes dos Santos

Abstract: We study the edge magnetization of bilayer graphene ribbons with zigzag edges. The presence of flat edge-state bands at the Fermi energy of undoped bilayer, which gives rise to a strong peak in the density of states, makes bilayer ribbons magnetic at the edges even for very small on-site electronic repulsion. Working with the Hubbard model in the Hartree Fock approximation we show that the magne… ▽ More We study the edge magnetization of bilayer graphene ribbons with zigzag edges. The presence of flat edge-state bands at the Fermi energy of undoped bilayer, which gives rise to a strong peak in the density of states, makes bilayer ribbons magnetic at the edges even for very small on-site electronic repulsion. Working with the Hubbard model in the Hartree Fock approximation we show that the magnetic structure in bilayer ribbons with zigzag edges is ferromagnetic along the edge, involving sites of the two layers, and antiferromagnetic between opposite edges. It is also shown that this magnetic structure is a consequence of the nature of the edge states present in bilayer ribbons with zigzag edges. Analogously to the monolayer case, edge site magnetization as large as $m \approx0.2 μ_{B}$ (per lattice site) even at small on-site Hubbard repulsion $U \approx 0.3 {eV}$ is realized in nanometer wide bilayer ribbons. △ Less

Submitted 17 January, 2008; originally announced January 2008.

Comments: 6 pages, 4 figures

Journal ref: J. Optoelectron. Adv. Materials 10, 1716 (2008)

A time of flight method to measure the speed of sound using a stereo sound card

Authors: Carlos C. Carvalho, J. M. B. Lopes dos Santos, M. B. Marques

Abstract: We present an inexpensive apparatus for measuring the speed of sound, with a time of flight method, using a computer with a stereo sound board. Students measure the speed of sound by timing the delay between the arrivals of a pulse to two microphones placed at different distances from the source. It can serve as a very effective demonstration, providing a quick measurement of the speed of sound… ▽ More We present an inexpensive apparatus for measuring the speed of sound, with a time of flight method, using a computer with a stereo sound board. Students measure the speed of sound by timing the delay between the arrivals of a pulse to two microphones placed at different distances from the source. It can serve as a very effective demonstration, providing a quick measurement of the speed of sound in air; we have used it with great success in Open Days in our Department. It can also be used for a full fledged laboratory determination of the speed of sound in air. △ Less

Submitted 10 December, 2007; originally announced December 2007.

Comments: Accepted for publication in The Physics Teacher

Modeling disorder in graphene

Authors: Vitor M. Pereira, J. M. B. Lopes dos Santos, A. H. Castro Neto

Abstract: We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies -- random, compensated and uncompensated --, local impurities and substitutional impurities bring into the electronic structure of graphene. By exploring these types of disorder and their connections, we show that they introduce dramatic changes in the low energy spectrum of grap… ▽ More We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies -- random, compensated and uncompensated --, local impurities and substitutional impurities bring into the electronic structure of graphene. By exploring these types of disorder and their connections, we show that they introduce dramatic changes in the low energy spectrum of graphene, viz. localized zero modes, strong resonances, gap and pseudogap behavior, and non-dispersive midgap zero modes. △ Less

Submitted 5 December, 2007; originally announced December 2007.

Comments: 16 pages, lower resolution figures

Journal ref: Phys. Rev. B 77, 115109 (2008)

Gaped graphene bilayer: disorder and magnetic field effects

Authors: Eduardo V. Castro, N. M. R. Peres, J. M. B. Lopes dos Santos

Abstract: Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder, perpendicular magnetic field, and transverse electric field. We show that the gap is rather stable in the presence of dia… ▽ More Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder, perpendicular magnetic field, and transverse electric field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi-classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields. △ Less

Submitted 21 November, 2007; originally announced November 2007.

Comments: 5 pages, 4 figures

Journal ref: phys. stat. sol. (b) 244, 2311 (2007)

Phenomenological study of the electronic transport coefficients of graphene

Authors: N. M. R. Peres, J. M. B. Lopes dos Santos, T. Stauber

Abstract: Using a semi-classical approach and input from experiments on the conductivity of graphene, we determine the electronic density dependence of the electronic transport coefficients -- conductivity, thermal conductivity and thermopower -- of doped graphene. Also the electronic density dependence of the optical conductivity is obtained. Finally we show that the classical Hall effect (low field) in… ▽ More Using a semi-classical approach and input from experiments on the conductivity of graphene, we determine the electronic density dependence of the electronic transport coefficients -- conductivity, thermal conductivity and thermopower -- of doped graphene. Also the electronic density dependence of the optical conductivity is obtained. Finally we show that the classical Hall effect (low field) in graphene has the same form as for the independent electron case, characterized by a parabolic dispersion, as long as the relaxation time is proportional to the momentum. △ Less

Submitted 11 October, 2007; originally announced October 2007.

Comments: 4 pages, 1 figure

Journal ref: Phys. Rev. B 76, 073412 (2007)

Analytic results on long distance entanglement mediated by gapped spin chains

Authors: A. Ferreira, J. M. B. Lopes dos Santos

Abstract: We give an analytical description of long distance entanglement (LDE) mediated by one-dimensional quantum spin chains recently found in numerical studies. We develop a formalism that allows the computation of LDE for weakly interacting probes with gapped many-body systems. At zero temperature, a DC response function determines the ability of the physical system to generate genuine quantum correl… ▽ More We give an analytical description of long distance entanglement (LDE) mediated by one-dimensional quantum spin chains recently found in numerical studies. We develop a formalism that allows the computation of LDE for weakly interacting probes with gapped many-body systems. At zero temperature, a DC response function determines the ability of the physical system to generate genuine quantum correlations between the probes. We show that the biquadratic Heisenberg spin-1 chain is able to produce LDE in the thermodynamical limit and that the finite antiferromagnetic Heisenberg chain maximally entangles two spin-1/2 probes very far apart. These results support the current perspective of using quantum spin chains as entanglers or quantum channels in quantum information devices. △ Less

Submitted 10 April, 2008; v1 submitted 2 August, 2007; originally announced August 2007.

Comments: 4 pages, 2 figures, submitted for publication

Journal ref: Phys. Rev. A. 77 (2008) 034301

Localized states at zigzag edges of bilayer graphene

Authors: Eduardo V. Castro, N. M. R. Peres, J. M. B. Lopes dos Santos, A. H. Castro Neto, F. Guinea

Abstract: We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface sta… ▽ More We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene; (ii) states with finite amplitude over the two layers, with an enhanced penetration into the bulk. The bulk and surface (edge) electronic structure of bilayer graphene nanoribbons is also studied, both in the absence and in the presence of a bias voltage between planes. △ Less

Submitted 25 July, 2007; originally announced July 2007.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. Lett. 100, 026802 (2008)