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Easy-plane spin Hall oscillator
Authors:
Eric Arturo Montoya,
Amanatullah Khan,
Christopher Safranski,
Andrew Smith,
Ilya N. Krivorotov
Abstract:
Spin Hall oscillators (SHOs) based on bilayers of a ferromagnet (FM) and a non-magnetic heavy metal (HM) are electrically tunable nanoscale microwave signal generators. Achieving high output power in SHOs requires driving large-amplitude magnetization dynamics by a direct spin Hall current. The maximum possible amplitude of such oscillations with the precession cone angle nearing $90^\circ$ is pre…
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Spin Hall oscillators (SHOs) based on bilayers of a ferromagnet (FM) and a non-magnetic heavy metal (HM) are electrically tunable nanoscale microwave signal generators. Achieving high output power in SHOs requires driving large-amplitude magnetization dynamics by a direct spin Hall current. The maximum possible amplitude of such oscillations with the precession cone angle nearing $90^\circ$ is predicted for FM layers with easy-plane magnetic anisotropy and spin Hall current polarization perpendicular to the easy plane. While many FMs exhibit natural easy-plane anisotropy in the FM film plane, the spin Hall current in a HM|FM bilayer is polarized in this plane and thus cannot drive large-amplitude magneto-dynamics. Here we present a new type of SHO engineered to have the easy-plane anisotropy oriented normal to the film plane, enabling large-amplitude easy-plane dynamics driven by spin Hall current. Our experiments and micromagnetic simulations demonstrate that the desired easy-plane anisotropy can be achieved by tuning the magnetic shape anisotropy and perpendicular magnetic anisotropy in a nanowire SHO, leading to a significant enhancement of the generated microwave power. The easy-plane SHO experimentally demonstrated here is an ideal candidate for realization of a spintronic spiking neuron. Our results provide a new approach to design of high-power SHOs for wireless communications, neuromorphic computing, and microwave assisted magnetic recording.
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Submitted 22 January, 2023;
originally announced January 2023.
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A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories
Authors:
Christopher Safranski,
Jonathan Z. Sun,
Andrew D. Kent
Abstract:
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms of conversion of charge current to spin current can be used in 2-terminal and 3-terminal device geometries. In 2-terminal devices, charge-to-spin conv…
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Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms of conversion of charge current to spin current can be used in 2-terminal and 3-terminal device geometries. In 2-terminal devices, charge-to-spin conversion occurs by spin filtering in the MTJ's ferromagnetic electrodes and present day MRAM devices operate near the theoretically expected maximum charge-to-spin conversion efficiency. In 3-terminal devices, spin-orbit interactions in a channel material can also be used to generate large spin currents. In this perspective article, we discuss charge-to-spin conversion processes that can satisfy the requirements of MRAM technology. We emphasize the need to develop channel materials with larger charge-to-spin conversion efficiency -- that can equal or exceed that produced by spin filtering -- and spin currents with a spin polarization component perpendicular to the channel interface. This would enable high-performance devices based on sub-20 nm diameter perpendicularly magnetized MTJ nanopillars without need of a symmetry breaking field. We also discuss MRAM characteristics essential for CMOS integration. Finally, we identify critical research needs for charge-to-spin conversion measurements and metrics that can be used to optimize device channel materials and interface properties prior to full MTJ nanopillar device fabrication and characterization.
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Submitted 10 January, 2022;
originally announced January 2022.
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Demonstration of nanosecond operation in stochastic magnetic tunnel junctions
Authors:
Christopher Safranski,
Jan Kaiser,
Philip Trouilloud,
Pouya Hashemi,
Guohan Hu,
Jonathan Z Sun
Abstract:
Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random number generation is of interest in the field of cryptography. For such applications, a device's uncorrelated fluctuation time-scale can determine the effective…
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Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random number generation is of interest in the field of cryptography. For such applications, a device's uncorrelated fluctuation time-scale can determine the effective system speed. It has been theoretically proposed that a magnetic tunnel junction designed to have only easy-plane anisotropy provides fluctuation rates determined by its easy-plane anisotropy field, and can perform on nanosecond or faster time-scale as measured by its magnetoresistance's autocorrelation in time. Here we provide experimental evidence of nanosecond scale fluctuations in a circular shaped easy-plane magnetic tunnel junction, consistent with finite-temperature coupled macrospin simulation results and prior theoretical expectations. We further assess the degree of stochasticity of such signal.
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Submitted 27 October, 2020;
originally announced October 2020.
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Planar Hall driven torque in a FM/NM/FM system
Authors:
Christopher Safranski,
Jun-Wen Xu,
Andrew D. Kent,
Jonathan Z. Sun
Abstract:
An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilayer is used as a spin current source in a sample with structure CoNi/Au/CoFeB. Spin torque ferromagnetic resonance is used to measure the torque on the…
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An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilayer is used as a spin current source in a sample with structure CoNi/Au/CoFeB. Spin torque ferromagnetic resonance is used to measure the torque on the CoFeB layer. The response as a function of the applied field angle and current is consistent with the symmetry expected for a torques produced by the planar Hall effect originating in CoNi. We find the strength of this effect to be comparable to that of the spin Hall effect in platinum, indicating that the planar Hall effect holds potential as a spin current source with a controllable polarization direction.
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Submitted 17 October, 2019;
originally announced October 2019.
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Thermally driven two-magnet nano-oscillator with large spin-charge conversion
Authors:
Bassim Arkook,
Christopher Safranski,
Rodolfo Rodriguez,
Ilya N. Krivorotov,
Tobias Schneider,
Kilian Lenz,
Jürgen Lindner,
Houchen Chang,
Mingzhong Wu,
Yaroslav Tserkovnyak,
Igor Barsukov
Abstract:
Next-generation spintronic applications require material properties that can be hardly met by one material candidate. Here we demonstrate that by combining insulating and metallic magnets, enhanced spin-charge conversion and energy-efficient thermal spin currents can be realized. We develop a nanowire device consisting of an yttrium iron garnet and permalloy bi-layer. An interfacial temperature gr…
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Next-generation spintronic applications require material properties that can be hardly met by one material candidate. Here we demonstrate that by combining insulating and metallic magnets, enhanced spin-charge conversion and energy-efficient thermal spin currents can be realized. We develop a nanowire device consisting of an yttrium iron garnet and permalloy bi-layer. An interfacial temperature gradient drives the nanowire magnetization into auto-oscillations at gigahertz frequencies. Interfacial spin coupling and magnetoresistance of the permalloy layer translate spin dynamics into sizable microwave signals. The results show prospect for energy-efficient spintronic devices and present an experimental realization of magnon condensation in a heterogeneous magnetic system.
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Submitted 26 September, 2019;
originally announced September 2019.
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Interface moment dynamics and its contribution to spin-transfer torque switching process in magnetic tunnel junctions
Authors:
Christopher Safranski,
Jonathan Z. Sun
Abstract:
A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error processes are present that cause a decrease in switching probability upon further increase of bias voltage. We identify the main cause of such error-rise proces…
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A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error processes are present that cause a decrease in switching probability upon further increase of bias voltage. We identify the main cause of such error-rise process through examination of switching statistics as a function of bias voltage and applied field, and the junction switching dynamics in real time. These experiments show a coincidental onset of error-rise and the presence of a new low-frequency microwave emission well below that dictated by the anisotropy field. We show that in a few-macrospin coupled numerical model, this is consistent with an interface region with concentrated perpendicular anisotropy, and where the magnetic moment has limited exchange coupling to the rest of the layers. These results point to the important role high-frequency interface magnetic moment dynamics play in determining the switching characteristics of these tunnel junction devices.
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Submitted 30 May, 2019;
originally announced May 2019.
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Planar Hall torque
Authors:
C. Safranski,
E. A. Montoya,
I. N. Krivorotov
Abstract:
Spin-orbit torques in bilayers of ferromagnetic and nonmagnetic materials hold promise for energy efficient switching of magnetization in nonvolatile magnetic memories. Previously studied spin Hall and Rashba torques originate from spin-orbit interactions within the nonmagnetic material and at the bilayer interface, respectively. Here we report a spin-orbit torque that arises from planar Hall curr…
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Spin-orbit torques in bilayers of ferromagnetic and nonmagnetic materials hold promise for energy efficient switching of magnetization in nonvolatile magnetic memories. Previously studied spin Hall and Rashba torques originate from spin-orbit interactions within the nonmagnetic material and at the bilayer interface, respectively. Here we report a spin-orbit torque that arises from planar Hall current in the ferromagnetic material of the bilayer and acts as either positive or negative magnetic damping. This planar Hall torque exhibits unusual biaxial symmetry in the plane defined by the applied electric field and the bilayer normal. The magnitude of the planar Hall torque is similar to that of the giant spin Hall torque and is large enough to excite auto-oscillations of the ferromagnetic layer magnetization.
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Submitted 20 December, 2017;
originally announced December 2017.
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Spin caloritronic nano-oscillator
Authors:
Chris Safranski,
Igor Barsukov,
Han Kyu Lee,
Tobias Schneider,
Alejandro Jara,
Andrew Smith,
Houchen Chang,
Kilian Lenz,
Juergen Lindner,
Yaroslav Tserkovnyak,
Mingzhong Wu,
Ilya Krivorotov
Abstract:
Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signa…
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Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in $\mathrm{Y_{3}Fe_{5}O_{12}/Pt}$ bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the $\mathrm{Y_{3}Fe_{5}O_{12}}$ layer. This leads to excitation of auto-oscillations of the $\mathrm{Y_{3}Fe_{5}O_{12}}$ magnetization and generation of coherent microwave radiation. Our work paves the way towards spin caloritronic devices for microwave and magnonic applications.
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Submitted 27 July, 2017; v1 submitted 3 November, 2016;
originally announced November 2016.
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Magnetic phase transitions in Ta/CoFeB/MgO multilayers
Authors:
I. Barsukov,
Yu Fu,
C. Safranski,
Y. -J. Chen,
B. Youngblood,
A. M. Gonçalves,
M. Spasova,
M. Farle,
J. A. Katine,
C. C. Kuo,
I. N. Krivorotov
Abstract:
We study thin films and magnetic tunnel junction nanopillars based on Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co$_{20}$Fe$_{60}$B$_{20}$/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low tem…
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We study thin films and magnetic tunnel junction nanopillars based on Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co$_{20}$Fe$_{60}$B$_{20}$/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in spin torque memories.
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Submitted 25 April, 2015;
originally announced April 2015.
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Angular dependence of superconductivity in superconductor / spin valve heterostructures
Authors:
Alejandro A. Jara,
Christopher Safranski,
Ilya N. Krivorotov,
Chien-Te Wu,
Abdul N. Malmi-Kakkada,
Oriol T. Valls,
Klaus Halterman
Abstract:
We report measurements of the superconducting transition temperature, $T_c$, in CoO/Co/Cu/Co/Nb multilayers as a function of the angle $α$ between the magnetic moments of the Co layers. Our measurements reveal that $T_c(α)$ is a nonmonotonic function, with a minimum near $α=π/{2}$. Numerical self-consistent solutions of the Bogoliubov - de Gennes equations quantitatively and accurately describe th…
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We report measurements of the superconducting transition temperature, $T_c$, in CoO/Co/Cu/Co/Nb multilayers as a function of the angle $α$ between the magnetic moments of the Co layers. Our measurements reveal that $T_c(α)$ is a nonmonotonic function, with a minimum near $α=π/{2}$. Numerical self-consistent solutions of the Bogoliubov - de Gennes equations quantitatively and accurately describe the behavior of $T_c$ as a function of $α$ and layer thicknesses in these superconductor / spin-valve heterostructures. We show that experimental data and theoretical evidence agree in relating $T_c(α)$ to enhanced penetration of the triplet component of the condensate into the Co/Cu/Co spin valve in the maximally noncollinear magnetic configuration.
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Submitted 9 May, 2014; v1 submitted 8 April, 2014;
originally announced April 2014.
