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Fast unconditional reset and leakage reduction in fixed-frequency transmon qubits
Authors:
Liangyu Chen,
Simon Pettersson Fors,
Zixian Yan,
Anaida Ali,
Tahereh Abad,
Amr Osman,
Eleftherios Moschandreou,
Benjamin Lienhard,
Sandoko Kosen,
Hang-Xi Li,
Daryoush Shiri,
Tong Liu,
Stefan Hill,
Abdullah-Al Amin,
Robert Rehammar,
Mamta Dahiya,
Andreas Nylander,
Marcus Rommel,
Anita Fadavi Roudsari,
Marco Caputo,
Grönberg Leif,
Joonas Govenius,
Miroslav Dobsicek,
Michele Faucci Giannelli,
Anton Frisk Kockum
, et al. (2 additional authors not shown)
Abstract:
The realization of fault-tolerant quantum computing requires the execution of quantum error-correction (QEC) schemes, to mitigate the fragile nature of qubits. In this context, to ensure the success of QEC, a protocol capable of implementing both qubit reset and leakage reduction is highly desirable. We demonstrate such a protocol in an architecture consisting of fixed-frequency transmon qubits pa…
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The realization of fault-tolerant quantum computing requires the execution of quantum error-correction (QEC) schemes, to mitigate the fragile nature of qubits. In this context, to ensure the success of QEC, a protocol capable of implementing both qubit reset and leakage reduction is highly desirable. We demonstrate such a protocol in an architecture consisting of fixed-frequency transmon qubits pair-wise coupled via tunable couplers -- an architecture that is compatible with the surface code. We use tunable couplers to transfer any undesired qubit excitation to the readout resonator of the qubit, from which this excitation decays into the feedline. In total, the combination of qubit reset, leakage reduction, and coupler reset takes only 83ns to complete. Our reset scheme is fast, unconditional, and achieves fidelities well above 99%, thus enabling fixed-frequency qubit architectures as future implementations of fault-tolerant quantum computers. Our protocol also provides a means to both reduce QEC cycle runtime and improve algorithmic fidelity on quantum computers.
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Submitted 7 October, 2024; v1 submitted 25 September, 2024;
originally announced September 2024.
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Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging
Authors:
Lert Chayanun,
Janka Biznárová,
Lunjie Zeng,
Per Malmberg,
Andreas Nylander,
Amr Osman,
Marcus Rommel,
Pui Lam Tam,
Eva Olsson,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconduct…
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We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the $Q_i$. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300$°$C, or in-situ post-deposition oxidation of the film's top surface. We find no improvement due to excessive pumping meant to reach a background pressure below $6{\times} 10^{-8}$ mbar. We correlate the measured loss with microscopic properties of the substrate-metal interface through characterization with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM).
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Submitted 1 March, 2024;
originally announced March 2024.
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Signal crosstalk in a flip-chip quantum processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Robert Rehammar,
Marco Caputo,
Leif Grönberg,
Jorge Fernández-Pendás,
Anton Frisk Kockum,
Janka Biznárová,
Liangyu Chen,
Christian Križan,
Andreas Nylander,
Amr Osman,
Anita Fadavi Roudsari,
Daryoush Shiri,
Giovanna Tancredi,
Joonas Govenius,
Jonas Bylander
Abstract:
Quantum processors require a signal-delivery architecture with high addressability (low crosstalk) to ensure high performance already at the scale of dozens of qubits. Signal crosstalk causes inadvertent driving of quantum gates, which will adversely affect quantum-gate fidelities in scaled-up devices. Here, we demonstrate packaged flip-chip superconducting quantum processors with signal-crosstalk…
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Quantum processors require a signal-delivery architecture with high addressability (low crosstalk) to ensure high performance already at the scale of dozens of qubits. Signal crosstalk causes inadvertent driving of quantum gates, which will adversely affect quantum-gate fidelities in scaled-up devices. Here, we demonstrate packaged flip-chip superconducting quantum processors with signal-crosstalk performance competitive with those reported in other platforms. For capacitively coupled qubit-drive lines, we find on-resonant crosstalk better than -27 dB (average -37 dB). For inductively coupled magnetic-flux-drive lines, we find less than 0.13 % direct-current flux crosstalk (average 0.05 %). These observed crosstalk levels are adequately small and indicate a decreasing trend with increasing distance, which is promising for further scaling up to larger numbers of qubits. We discuss the implication of our results for the design of a low-crosstalk, on-chip signal delivery architecture, including the influence of a shielding tunnel structure, potential sources of crosstalk, and estimation of crosstalk-induced qubit-gate error in scaled-up quantum processors.
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Submitted 12 September, 2024; v1 submitted 1 March, 2024;
originally announced March 2024.
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Peripheral circuits for ideal performance of a travelling-wave parametric amplifier
Authors:
Hampus Renberg Nilsson,
Daryoush Shiri,
Robert Rehammar,
Anita Fadavi Roudsari,
Per Delsing
Abstract:
We investigate the required peripheral circuits to enable ideal performance for a high-gain travelling-wave parametric amplifier (TWPA) based on three-wave mixing (3WM). By embedding the TWPA in a network of superconducting diplexers, hybrid couplers and impedance matching networks, the amplifier can deliver a high stable gain with near-quantum-limited noise performance, with suppressed gain rippl…
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We investigate the required peripheral circuits to enable ideal performance for a high-gain travelling-wave parametric amplifier (TWPA) based on three-wave mixing (3WM). By embedding the TWPA in a network of superconducting diplexers, hybrid couplers and impedance matching networks, the amplifier can deliver a high stable gain with near-quantum-limited noise performance, with suppressed gain ripples, while eliminating the reflections of the signal, the idler and the pump as well as the transmission of all unwanted tones. We also demonstrate a configuration where the amplifier can isolate. We call this technique Wideband Idler Filtering (WIF). The theory is supported by simulations that predict over 20 dB gain in the 4-8 GHz band with 10 dB isolation for a single amplifier and 30 dB isolation for two cascaded amplifiers. We demonstrate how the WIF-TWPAs can be used to construct controllable isolators with over 40 dB isolation over the full 4-8 GHz band.
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Submitted 30 January, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits
Authors:
Janka Biznárová,
Amr Osman,
Emil Rehnman,
Lert Chayanun,
Christian Križan,
Per Malmberg,
Marcus Rommel,
Christopher Warren,
Per Delsing,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation…
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We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation of loss is achieved by reducing the presence of oxide, a known host of defects, near the substrate-metal interface, by growing aluminum films thicker than 300 nm. A loss analysis of coplanar-waveguide resonators shows that the improvement is owing to a reduction of dielectric loss due to two-level system defects. We perform time-of-flight secondary ion mass spectrometry and observe a reduced presence of oxygen at the substrate-metal interface for the thicker films. The correlation between the enhanced performance and the film thickness is due to the tendency of aluminum to grow in columnar structures of parallel grain boundaries, where the size of the grain depends on the film thickness: transmission electron microscopy imaging shows that the thicker film has larger grains and consequently fewer grain boundaries containing oxide near this interface. These conclusions are supported by numerical simulations of the different loss contributions in the device.
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Submitted 10 October, 2023;
originally announced October 2023.
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Fast generation of Schrödinger cat states in a Kerr-tunable superconducting resonator
Authors:
X. L. He,
Yong Lu,
D. Q. Bao,
Hang Xue,
W. B. Jiang,
Zhen Wang,
A. F. Roudsari,
Per Delsing,
J. S. Tsai,
Z. R. Lin
Abstract:
Schrödinger cat states, quantum superpositions of macroscopically distinct classical states, are an important resource for quantum communication, quantum metrology and quantum computation. Especially, cat states in a phase space protected against phase-flip errors can be used as a logical qubit. However, cat states, normally generated in three-dimensional cavities, are facing the challenges of sca…
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Schrödinger cat states, quantum superpositions of macroscopically distinct classical states, are an important resource for quantum communication, quantum metrology and quantum computation. Especially, cat states in a phase space protected against phase-flip errors can be used as a logical qubit. However, cat states, normally generated in three-dimensional cavities, are facing the challenges of scalability and controllability. Here, we present a novel strategy to generate and store cat states in a coplanar superconducting circuit by the fast modulation of Kerr nonlinearity. At the Kerr-free work point, our cat states are passively preserved due to the vanishing Kerr effect. We are able to prepare a 2-component cat state in our chip-based device with a fidelity reaching 89.1% under a 96 ns gate time. Our scheme shows an excellent route to constructing a chip-based bosonic quantum processor.
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Submitted 28 August, 2023;
originally announced August 2023.
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Modeling and Harmonic Balance Analysis of Parametric Amplifiers for Qubit Read-out
Authors:
Daryoush Shiri,
Hampus Renberg Nilsson,
Pavan Telluri,
Anita Fadavi Roudsari,
Vitaly Shumeiko,
Christian Fager,
Per Delsing
Abstract:
Predicting the performance of traveling-wave parametric amplifiers (TWPAs) based on nonlinear elements like superconducting Josephson junctions (JJs) is vital for qubit read-out in quantum computers. The purpose of this article is twofold: (a) to demonstrate how nonlinear inductors based on combinations of JJs can be modeled in commercial circuit simulators, and (b) to show how the harmonic balanc…
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Predicting the performance of traveling-wave parametric amplifiers (TWPAs) based on nonlinear elements like superconducting Josephson junctions (JJs) is vital for qubit read-out in quantum computers. The purpose of this article is twofold: (a) to demonstrate how nonlinear inductors based on combinations of JJs can be modeled in commercial circuit simulators, and (b) to show how the harmonic balance (HB) is used in the reliable prediction of the amplifier performance e.g., gain and pump harmonic power conversion. Experimental characterization of two types of TWPA architectures is compared with simulations to showcase the reliability of the HB method. We disseminate the modeling know-how and techniques to new designers of parametric amplifiers.
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Submitted 22 July, 2024; v1 submitted 8 June, 2023;
originally announced June 2023.
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Mitigation of frequency collisions in superconducting quantum processors
Authors:
Amr Osman,
Jorge Fernàndez-Pendàs,
Christopher Warren,
Sandoko Kosen,
Marco Scigliuzzo,
Anton Frisk Kockum,
Giovanna Tancredi,
Anita Fadavi Roudsari,
Jonas Bylander
Abstract:
The reproducibility of qubit parameters is a challenge for scaling up superconducting quantum processors. Signal crosstalk imposes constraints on the frequency separation between neighboring qubits. The frequency uncertainty of transmon qubits arising from the fabrication process is attributed to deviations in the Josephson junction area, tunnel barrier thickness, and the qubit capacitor. We decre…
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The reproducibility of qubit parameters is a challenge for scaling up superconducting quantum processors. Signal crosstalk imposes constraints on the frequency separation between neighboring qubits. The frequency uncertainty of transmon qubits arising from the fabrication process is attributed to deviations in the Josephson junction area, tunnel barrier thickness, and the qubit capacitor. We decrease the sensitivity to these variations by fabricating larger Josephson junctions and reduce the wafer-level standard deviation in resistance down to 2%. We characterize 32 identical transmon qubits and demonstrate the reproducibility of the qubit frequencies with a 40 MHz standard deviation (i.e. 1%) with qubit quality factors exceeding 2 million. We perform two-level-system (TLS) spectroscopy and observe no significant increase in the number of TLSs causing qubit relaxation. We further show by simulation that for our parametric-gate architecture, and accounting only for errors caused by the uncertainty of the qubit frequency, we can scale up to 100 qubits with an average of only 3 collisions between quantum-gate transition frequencies, assuming 2% crosstalk and 99.9% target gate fidelity.
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Submitted 10 March, 2023; v1 submitted 8 March, 2023;
originally announced March 2023.
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Three-wave mixing traveling-wave parametric amplifier with periodic variation of the circuit parameters
Authors:
Anita Fadavi Roudsari,
Daryoush Shiri,
Hampus Renberg Nilsson,
Giovanna Tancredi,
Amr Osman,
Ida-Maria Svensson,
Marina Kudra,
Marcus Rommel,
Jonas Bylander,
Vitaly Shumeiko,
Per Delsing
Abstract:
We report the implementation of a near-quantum-limited, traveling-wave parametric amplifier that uses three-wave mixing (3WM). To favor amplification by 3WM, we use the superconducting nonlinear asymmetric inductive element (SNAIL) loops, biased with a dc magnetic flux. In addition, we equip the device with dispersion engineering features to create a stop-band at the second harmonic of the pump an…
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We report the implementation of a near-quantum-limited, traveling-wave parametric amplifier that uses three-wave mixing (3WM). To favor amplification by 3WM, we use the superconducting nonlinear asymmetric inductive element (SNAIL) loops, biased with a dc magnetic flux. In addition, we equip the device with dispersion engineering features to create a stop-band at the second harmonic of the pump and suppress the propagation of the higher harmonics that otherwise degrade the amplification. With a chain of 440 SNAILs, the amplifier provides up to 20 dB gain and a 3-dB bandwidth of 1 GHz. The added noise by the amplifier is found to be less than one photon.
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Submitted 15 September, 2022;
originally announced September 2022.
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Transmon qubit readout fidelity at the threshold for quantum error correction without a quantum-limited amplifier
Authors:
Liangyu Chen,
Hang-Xi Li,
Yong Lu,
Christopher W. Warren,
Christian J. Križan,
Sandoko Kosen,
Marcus Rommel,
Shahnawaz Ahmed,
Amr Osman,
Janka Biznárová,
Anita Fadavi Roudsari,
Benjamin Lienhard,
Marco Caputo,
Kestutis Grigoras,
Leif Grönberg,
Joonas Govenius,
Anton Frisk Kockum,
Per Delsing,
Jonas Bylander,
Giovanna Tancredi
Abstract:
High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to di…
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High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to distinguish among qubit populations in higher energy levels. Using a machine-learning algorithm to post-process the two-tone measurement results further improves the qubit-state assignment fidelity. We perform single-shot frequency-multiplexed qubit readout, with a 140ns readout time, and demonstrate 99.5% assignment fidelity for two-state readout and 96.9% for three-state readout - without using a quantum-limited amplifier.
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Submitted 11 August, 2022;
originally announced August 2022.
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Extensive characterization of a family of efficient three-qubit gates at the coherence limit
Authors:
Christopher W. Warren,
Jorge Fernández-Pendás,
Shahnawaz Ahmed,
Tahereh Abad,
Andreas Bengtsson,
Janka Biznárová,
Kamanasish Debnath,
Xiu Gu,
Christian Križan,
Amr Osman,
Anita Fadavi Roudsari,
Per Delsing,
Göran Johansson,
Anton Frisk Kockum,
Giovanna Tancredi,
Jonas Bylander
Abstract:
While all quantum algorithms can be expressed in terms of single-qubit and two-qubit gates, more expressive gate sets can help reduce the algorithmic depth. This is important in the presence of gate errors, especially those due to decoherence. Using superconducting qubits, we have implemented a three-qubit gate by simultaneously applying two-qubit operations, thereby realizing a three-body interac…
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While all quantum algorithms can be expressed in terms of single-qubit and two-qubit gates, more expressive gate sets can help reduce the algorithmic depth. This is important in the presence of gate errors, especially those due to decoherence. Using superconducting qubits, we have implemented a three-qubit gate by simultaneously applying two-qubit operations, thereby realizing a three-body interaction. This method straightforwardly extends to other quantum hardware architectures, requires only a "firmware" upgrade to implement, and is faster than its constituent two-qubit gates. The three-qubit gate represents an entire family of operations, creating flexibility in quantum-circuit compilation. We demonstrate a gate fidelity of $97.90\%$, which is near the coherence limit of our device. We then generate two classes of entangled states, the GHZ and W states, by applying the new gate only once; in comparison, decompositions into the standard gate set would have a two-qubit gate depth of two and three, respectively. Finally, we combine characterization methods and analyze the experimental and statistical errors on the fidelity of the gates and of the target states.
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Submitted 6 July, 2022;
originally announced July 2022.
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A high gain travelling-wave parametric amplifier based on three-wave mixing
Authors:
Hampus Renberg Nilsson,
Anita Fadavi Roudsari,
Daryoush Shiri,
Per Delsing,
Vitaly Shumeiko
Abstract:
We extend the theory for a Josephson junction travelling wave parametric amplifier (TWPA) operating in the three-wave mixing regime and we propose a scheme for achieving high gain. The continuous three-mode model [P. K. Tien, J. Appl. Phys. 29, 1347 (1958)] is on one hand extended to describe a discrete chain of Josephson junctions at high frequencies close to the spectral cutoff where there is no…
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We extend the theory for a Josephson junction travelling wave parametric amplifier (TWPA) operating in the three-wave mixing regime and we propose a scheme for achieving high gain. The continuous three-mode model [P. K. Tien, J. Appl. Phys. 29, 1347 (1958)] is on one hand extended to describe a discrete chain of Josephson junctions at high frequencies close to the spectral cutoff where there is no up-conversion. On the other hand, we also develop a continuous multimode theory for the low-frequency region where the frequency dispersion is close to linear. We find that in both cases the gain is significantly reduced compared to the prediction by the continuous three-mode model as the result of increasingly strong dispersion at the high frequencies and generation of up-converted modes at the low frequencies. The developed theory is in quantitative agreement with experimental observations. To recover the high gain, we propose to engineer a chain with dispersive features to form a two-band frequency spectrum and to place the pump frequency within the upper band close to the spectral cutoff. We prove that there exists a sweet spot, where the signal and the pump are phase matched, while the up-conversion is inhibited. This results in a high gain which grows exponentially with the length of the TWPA.
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Submitted 16 May, 2022;
originally announced May 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Building Blocks of a Flip-Chip Integrated Superconducting Quantum Processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Daryoush Shiri,
Christopher Warren,
Leif Grönberg,
Jaakko Salonen,
Tahereh Abad,
Janka Biznárová,
Marco Caputo,
Liangyu Chen,
Kestutis Grigoras,
Göran Johansson,
Anton Frisk Kockum,
Christian Križan,
Daniel Pérez Lozano,
Graham Norris,
Amr Osman,
Jorge Fernández-Pendás,
Alberto Ronzani,
Anita Fadavi Roudsari,
Slawomir Simbierowicz,
Giovanna Tancredi,
Andreas Wallraff,
Christopher Eichler
, et al. (2 additional authors not shown)
Abstract:
We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods…
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We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods and discuss the sensitivity of device parameters to variation in interchip spacing. Notably, the additional flip-chip fabrication steps do not degrade the qubit performance compared to our baseline state-of-the-art in single-chip, planar circuits. This integration technique can be extended to the realisation of quantum processors accommodating hundreds of qubits in one module as it offers adequate input/output wiring access to all qubits and couplers.
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Submitted 14 June, 2022; v1 submitted 5 December, 2021;
originally announced December 2021.
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Simplified Josephson-junction fabrication process for reproducibly high-performance superconducting qubits
Authors:
A. Osman,
J. Simon,
A. Bengtsson,
S. Kosen,
P. Krantz,
D. Perez,
M. Scigliuzzo,
Jonas Bylander,
A. Fadavi Roudsari
Abstract:
We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with $T_1$ relaxation times averaging above 50$~μ$s ($Q>$1.5$\times$ 10$^6$). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction ele…
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We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with $T_1$ relaxation times averaging above 50$~μ$s ($Q>$1.5$\times$ 10$^6$). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction electrodes and the circuit wiring layer. The patch connection eliminates parasitic junctions, which otherwise contribute significantly to dielectric loss. In our patch-integrated cross-type (PICT) junction technique, we use one lithography step and one vacuum cycle to evaporate both the junction electrodes and the patch. In a study of more than 3600 junctions, we show an average resistance variation of 3.7$\%$ on a wafer that contains forty 0.5$\times$0.5-cm$^2$ chips, with junction areas ranging between 0.01 and 0.16 $μ$m$^2$. The average on-chip spread in resistance is 2.7$\%$, with 20 chips varying between 1.4 and 2$\%$. For the junction sizes used for transmon qubits, we deduce a wafer-level transition-frequency variation of 1.7-2.5$\%$. We show that 60-70$\%$ of this variation is attributed to junction-area fluctuations, while the rest is caused by tunnel-junction inhomogeneity. Such high frequency predictability is a requirement for scaling-up the number of qubits in a quantum computer.
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Submitted 10 November, 2020;
originally announced November 2020.
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Phononic loss in superconducting resonators on piezoelectric substrates
Authors:
Marco Scigliuzzo,
Laure E. Bruhat,
Andreas Bengtsson,
Jonathan J. Burnett,
Anita Fadavi Roudsari,
Per Delsing
Abstract:
We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to electromechanical conversion into bulk and surface acoustic waves. This sets an upper limit for the resonator internal quality factor $Q_i$. To validate the simulation, we fabr…
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We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to electromechanical conversion into bulk and surface acoustic waves. This sets an upper limit for the resonator internal quality factor $Q_i$. To validate the simulation, we fabricate quarter wavelength coplanar waveguide resonators on GaAs and measure $Q_i$ as function of frequency, power and temperature. We observe a linear increase of $Q_i$ with frequency, as predicted by the simulations for a constant electromechanical coupling. Additionally, $Q_i$ shows a weak power dependence and a negligible temperature dependence around 10$\,$mK, excluding two level systems and non-equilibrium quasiparticles as the main source of losses at that temperature.
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Submitted 19 December, 2019;
originally announced December 2019.
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Characterizing decoherence rates of a superconducting qubit by direct microwave scattering
Authors:
Yong Lu,
Andreas Bengtsson,
Jonathan J. Burnett,
Emely Wiegand,
Baladitya Suri,
Philip Krantz,
Anita Fadavi Roudsari,
Anton Frisk Kockum,
Simone Gasparinetti,
Göran Johansson,
Per Delsing
Abstract:
We experimentally investigate a superconducting qubit coupled to the end of an open transmission line, in a regime where the qubit decay rates to the transmission line and to its own environment are comparable. We perform measurements of coherent and incoherent scattering, on- and off-resonant fluorescence, and time-resolved dynamics to determine the decay and decoherence rates of the qubit. In pa…
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We experimentally investigate a superconducting qubit coupled to the end of an open transmission line, in a regime where the qubit decay rates to the transmission line and to its own environment are comparable. We perform measurements of coherent and incoherent scattering, on- and off-resonant fluorescence, and time-resolved dynamics to determine the decay and decoherence rates of the qubit. In particular, these measurements let us discriminate between non-radiative decay and pure dephasing. We combine and contrast results across all methods and find consistent values for the extracted rates. The results show that the pure dephasing rate is one order of magnitude smaller than the non-radiative decay rate for our qubit. Our results indicate a pathway to benchmark decoherence rates of superconducting qubits in a resonator-free setting.
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Submitted 4 December, 2019;
originally announced December 2019.
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Magnetic Field Dependent Microwave Losses in Superconducting Niobium Microstrip Resonators
Authors:
Sangil Kwon,
Anita Fadavi Roudsari,
Olaf W. B. Benningshof,
Yong-Chao Tang,
Hamid R. Mohebbi,
Ivar A. J. Taminiau,
Deler Langenberg,
Shinyoung Lee,
George Nichols,
David G. Cory,
Guo-Xing Miao
Abstract:
We describe an experimental protocol to characterize magnetic field dependent microwave losses in superconducting niobium microstrip resonators. Our approach provides a unified view that covers two well-known magnetic field dependent loss mechanisms: quasiparticle generation and vortex motion. We find that quasiparticle generation is the dominant loss mechanism for parallel magnetic fields. For pe…
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We describe an experimental protocol to characterize magnetic field dependent microwave losses in superconducting niobium microstrip resonators. Our approach provides a unified view that covers two well-known magnetic field dependent loss mechanisms: quasiparticle generation and vortex motion. We find that quasiparticle generation is the dominant loss mechanism for parallel magnetic fields. For perpendicular fields, the dominant loss mechanism is vortex motion or switches from quasiparticle generation to vortex motion, depending on cooling procedures. In particular, we introduce a plot of the quality factor versus the resonance frequency as a general method for identifying the dominant loss mechanism. We calculate the expected resonance frequency and the quality factor as a function of the magnetic field by modeling the complex resistivity. Key parameters characterizing microwave loss are estimated from comparisons of the observed and expected resonator properties. Based on these key parameters, we find a niobium resonator whose thickness is similar to its penetration depth is the best choice for X-band electron spin resonance applications. Finally, we detect partial release of the Meissner current at the vortex penetration field, suggesting that the interaction between vortices and the Meissner current near the edges is essential to understand the magnetic field dependence of the resonator properties.
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Submitted 26 June, 2018; v1 submitted 14 February, 2018;
originally announced February 2018.
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Junction-less nanowire based photodetector: Role of nanowire width
Authors:
Anita Fadavi Roudsari,
Iman Khodadadzadeh,
Nixon O,
Simarjeet S. Saini,
M. P. Anantram
Abstract:
Enhanced photocurrent is demonstrated in a junction-less photodetector with nanowires embedded in its channel. The fabricated photodetector consists of a large area for efficient absorption of incident light with energy band engineering achieved in nanowires. The structure design consists of a set of two symmetrically positioned gates, primary and secondary, that are located over the nanowires. Ea…
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Enhanced photocurrent is demonstrated in a junction-less photodetector with nanowires embedded in its channel. The fabricated photodetector consists of a large area for efficient absorption of incident light with energy band engineering achieved in nanowires. The structure design consists of a set of two symmetrically positioned gates, primary and secondary, that are located over the nanowires. Each gate is used for biasing and control of the charge flow. We find that detectors with narrower nanowires controlled by their secondary gate generate larger photocurrents under similar illumination conditions. Our results show that while the dark current remains the same, the photocurrent increases as the nanowire width decreases.
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Submitted 25 July, 2017;
originally announced July 2017.