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Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy
Authors:
Martin S. Williams,
Manuel Alonso-Orts,
Marco Schowalter,
Alexander Karg,
Sushma Raghuvansy,
Jon P. McCandless,
Debdeep Jena,
Andreas Rosenauer,
Martin Eickhoff,
Patrick Vogt
Abstract:
The growth of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $α$-Ga$_2$O$_3$(10$\bar{1}$0) and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The…
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The growth of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $α$-Ga$_2$O$_3$(10$\bar{1}$0) and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The presence of In on the $α$-Ga$_2$O$_3$ growth surface remarkably expands its growth window far into the metal-rich flux regime and to higher growth temperatures. With increasing O-to-Ga flux ratio ($R_{\text{O}}$), In incorporates into $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ up to $x \leq 0.08$. Upon a critical thickness, $β$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ nucleates and subsequently heteroepitaxially grows on top of $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ facets. Metal-rich MOCATAXY growth conditions, where $α$-Ga$_2$O$_3$ would not conventionally stabilize, lead to single-crystalline $α$-Ga$_2$O$_3$ with negligible In incorporation and improved surface morphology. Higher $T_{\text{G}}$ further results in single-crystalline $α$-Ga$_2$O$_3$ with well-defined terraces and step edges at their surfaces. For $R_{\text{O}} \leq 0.53$, In acts as a surfactant on the $α$-Ga$_2$O$_3$ growth surface by favoring step edges, while for $R_{\text{O}} \geq 0.8$, In incorporates and leads to a-plane $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ faceting and the subsequent ($\bar{2}$01) $β$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ growth on top. Thin film analysis by STEM reveals highly crystalline $α$-Ga$_2$O$_3$ layers and interfaces. We provide a phase diagram to guide the MBE and MOCATAXY growth of single-crystalline $α$-Ga$_2$O$_3$ on $α$-Al$_2$O$_3$(10$\bar{1}$0).
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Submitted 21 November, 2023;
originally announced November 2023.
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Using convolutional neural networks for stereological characterization of 3D hetero-aggregates based on synthetic STEM data
Authors:
Lukas Fuchs,
Tom Kirstein,
Christoph Mahr,
Orkun Furat,
Valentin Baric,
Andreas Rosenauer,
Lutz Maedler,
Volker Schmidt
Abstract:
The structural characterization of hetero-aggregates in 3D is of great interest, e.g., for deriving process-structure or structure-property relationships. However, since 3D imaging techniques are often difficult to perform as well as time and cost intensive, a characterization of hetero-aggregates based on 2D image data is desirable, but often non-trivial. To overcome the issues of characterizing…
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The structural characterization of hetero-aggregates in 3D is of great interest, e.g., for deriving process-structure or structure-property relationships. However, since 3D imaging techniques are often difficult to perform as well as time and cost intensive, a characterization of hetero-aggregates based on 2D image data is desirable, but often non-trivial. To overcome the issues of characterizing 3D structures from 2D measurements, a method is presented that relies on machine learning combined with methods of spatial stochastic modeling, where the latter are utilized for the generation of synthetic training data. This kind of training data has the advantage that time-consuming experiments for the synthesis of differently structured materials followed by their 3D imaging can be avoided. More precisely, a parametric stochastic 3D model is presented, from which a wide spectrum of virtual hetero-aggregates can be generated. Additionally, the virtual structures are passed to a physics-based simulation tool in order to generate virtual scanning transmission electron microscopy (STEM) images. The preset parameters of the 3D model together with the simulated STEM images serve as a database for the training of convolutional neural networks, which can be used to determine the parameters of the underlying 3D model and, consequently, to predict 3D structures of hetero-aggregates from 2D STEM images. Furthermore, an error analysis is performed to evaluate the prediction power of the trained neural networks with respect to structural descriptors, e.g. the hetero-coordination number.
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Submitted 27 October, 2023;
originally announced October 2023.
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Live processing of momentum-resolved STEM data for first moment imaging and ptychography
Authors:
Achim Strauch,
Dieter Weber,
Alexander Clausen,
Anastasiia Lesnichaia,
Arya Bangun,
Benjamin März,
Feng Jiao Lyu,
Qing Chen,
Andreas Rosenauer,
Rafal Dunin-Borkowski,
Knut Müller-Caspary
Abstract:
A reformulated implementation of single-sideband ptychography enables analysis and display of live detector data streams in 4D scanning transmission electron microscopy (STEM) using the LiberTEM open-source platform. This is combined with live first moment and further virtual STEM detector analysis. Processing of both real experimental and simulated data shows the characteristics of this method wh…
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A reformulated implementation of single-sideband ptychography enables analysis and display of live detector data streams in 4D scanning transmission electron microscopy (STEM) using the LiberTEM open-source platform. This is combined with live first moment and further virtual STEM detector analysis. Processing of both real experimental and simulated data shows the characteristics of this method when data is processed progressively, as opposed to the usual offline processing of a complete dataset. In particular, the single side band method is compared to other techniques such as the enhanced ptychographic engine in order to ascertain its capability for structural imaging at increased specimen thickness. Qualitatively interpretable live results are obtained also if the sample is moved, or magnification is changed during the analysis. This allows live optimization of instrument as well as specimen parameters during the analysis. The methodology is especially expected to improve contrast- and dose-efficient in-situ imaging of weakly scattering specimens, where fast live feedback during the experiment is required.
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Submitted 17 August, 2021; v1 submitted 25 June, 2021;
originally announced June 2021.
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Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping
Authors:
Giulio Guzzinati,
Wannes Ghielens,
Christoph Mahr,
Armand Béché,
Andreas Rosenauer,
Toon Calders,
Jo Verbeeck
Abstract:
Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with sub-nanometer resolution. Here we present a no…
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Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with sub-nanometer resolution. Here we present a novel method to measure strain at the nanometer scale based on the diffraction of electron Bessel beams. We demonstrate that our method offers a strain sensitivity better than $2.5 \cdot 10^{-4}$ and an accuracy of $1.5 \cdot 10^{-3}$, competing with, or outperforming, the best existing methods with a simple and easy to use experimental setup.
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Submitted 18 June, 2019; v1 submitted 19 February, 2019;
originally announced February 2019.
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Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
Authors:
S. Schlichting,
G. M. O. Hönig,
J. Müßener,
P. Hille,
T. Grieb,
J. Teubert,
J. Schörmann,
M. R. Wagner,
A. Rosenauer,
M. Eickhoff,
A. Hoffmann,
G. Callsen
Abstract:
Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostructures. And in this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the QCSE…
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Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostructures. And in this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the QCSE in strongly polar $[000\bar{1}]$ wurtzite GaN/AlN nanodiscs while reducing the exciton life times by more than two orders of magnitude. The IFGARD based elimination of the QCSE is independent of any specific crystal growth procedures. Furthermore, the cone-shaped geometry of the utilized nanowires (which embeds the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement- and QCSE-induced emission energy shifts. Due to the IFGARD, both effects become independently adaptable.
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Submitted 21 July, 2017;
originally announced July 2017.
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Entropy-limited topological protection of skyrmions
Authors:
J. Wild,
T. N. G. Meier,
S. Pöllath,
M. Kronseder,
A. Bauer,
A. Chacon,
M. Halder,
M. Schowalter,
A. Rosenauer,
J. Zweck,
J. Müller,
A. Rosch,
C. Pfleiderer,
C. H. Back
Abstract:
Magnetic skyrmions are topologically protected whirls that decay through singular magnetic configurations known as Bloch points. We have used Lorentz transmission electron microscopy to infer the energetics associated with the topological decay of magnetic skyrmions far from equilibrium in the chiral magnet Fe$_{1-x}$Co$_x$Si. We observed that the life time $τ$ of the skyrmions depends exponential…
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Magnetic skyrmions are topologically protected whirls that decay through singular magnetic configurations known as Bloch points. We have used Lorentz transmission electron microscopy to infer the energetics associated with the topological decay of magnetic skyrmions far from equilibrium in the chiral magnet Fe$_{1-x}$Co$_x$Si. We observed that the life time $τ$ of the skyrmions depends exponentially on temperature, $τ\sim τ_0 \, e^{ΔE/k_B T}$. The prefactor $τ_0$ of this Arrhenius law changes by more than 30 orders of magnitude for small changes of magnetic field reflecting a substantial reduction of the life time of skyrmions by entropic effects and thus an extreme case of enthalpy-entropy compensation. Such compensation effects, being well-known across many different scientific disciplines, affect topological transitions and thus topological protection on an unprecedented level.
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Submitted 9 May, 2017; v1 submitted 4 May, 2017;
originally announced May 2017.
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Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy
Authors:
P. S. Sokolov,
M. Yu. Petrov,
T. Mehrtens,
K. Müller-Caspary,
A. Rosenauer,
D. Reuter,
A. D. Wieck
Abstract:
A microscopic study of the individual annealed (In,Ga)As/GaAs quantum dots is done by means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor component distribution and the chemical composition of the (In,Ga)As alloy are extracted from the microscopy images. The image processing allows for the reconstruction of the strain-induced electric-field gradients at the in…
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A microscopic study of the individual annealed (In,Ga)As/GaAs quantum dots is done by means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor component distribution and the chemical composition of the (In,Ga)As alloy are extracted from the microscopy images. The image processing allows for the reconstruction of the strain-induced electric-field gradients at the individual atomic columns extracting thereby the magnitude and asymmetry parameter of the nuclear quadrupole interaction. Nuclear magnetic resonance absorption spectra are analyzed for parallel and transverse mutual orientations of the electric-field gradient and a static magnetic field.
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Submitted 31 August, 2015;
originally announced August 2015.
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Growth of Oriented Au Nanostructures: Role of Oxide at the Interface
Authors:
Ashutosh Rath,
J. K. Dash,
R. R. Juluri,
A. Rosenauer,
Marcos Schoewalter,
P. V. Satyam
Abstract:
We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\circ} C). Various thicknesses of gold films have been deposited with SiOx (using high vacuum thermal evaporation) and without SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron microscopy measurements…
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We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\circ} C). Various thicknesses of gold films have been deposited with SiOx (using high vacuum thermal evaporation) and without SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron microscopy measurements were performed to determine the morphology, orientation of the structures and the nature of oxide layer. Interfacial oxide layer, low vacuum and high temperature annealing conditions are found to be necessary to grow oriented gold structures. These gold structures can be transferred by simple scratching method.
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Submitted 5 March, 2012;
originally announced March 2012.
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Temperature-dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface
Authors:
Ashutosh Rath,
J. K. Dash,
R. R. Juluri,
A Rosenauer,
P V Satyam
Abstract:
Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were used prior to gold thin film deposition: (i) without native oxide and on ultra-clean reconstructed Si surfaces and (ii) with native oxide covered Si surfaces. For…
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Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were used prior to gold thin film deposition: (i) without native oxide and on ultra-clean reconstructed Si surfaces and (ii) with native oxide covered Si surfaces. For a \approx 2.0 nm thick Au films deposited on reconstructed Si(100) surfaces using molecular beam epitaxy method under ultra high vacuum conditions, aligned four-fold symmetric nanogold silicide structures formed at relatively lower temperatures (compared with the one with native oxide at the interface). For this system, 82% of the nanostructures were found to be nano rectangles like structures with an average length \approx 27 nm and aspect ratio of 1.13 at \approx 700°C. For \approx 5.0 nm thick Au films deposited on Si (100) surface with native oxide at the interface, formation of rectangular structures were observed at higher temperatures (\approx 850° C). At these high temperatures, desorption of the gold silicide followed the symmetry of the substrate. Native oxide at the interface was found to act like a barrier for the inter-diffusion phenomena. Structural characterization was carried out using advanced electron microscopy methods.
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Submitted 3 February, 2012;
originally announced February 2012.
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Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces
Authors:
Ashutosh Rath,
J. K. Dash,
R. R. Juluri,
Marco Schowalter,
Knut Mueller,
A. Rosenauer,
P. V. Satyam
Abstract:
We report on the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions (\approx 3\times 10^{-10} mbar) on clean Si(100) surfaces. For this study, \approx 2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \apprx 500°C and following this, nearly…
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We report on the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions (\approx 3\times 10^{-10} mbar) on clean Si(100) surfaces. For this study, \approx 2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \apprx 500°C and following this, nearly square shaped Au_{x}Si_{1-x} nano structures of average length \approx 48 nm were formed. A \approx 2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of \approx 500°C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au - Ge nano systems. Rutherford backscattering Spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.
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Submitted 3 February, 2012;
originally announced February 2012.
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Object Wave Reconstruction by Phase-Plate Transmission Electron Microscopy
Authors:
B. Gamm,
M. Dries,
K. Schultheiss,
H. Blank,
A. Rosenauer,
R. R. Schröder,
D. Gerthsen
Abstract:
A method is described for the reconstruction of the amplitude and phase of the object exit wave function by phase-plate transmission electron microscopy. The proposed method can be considered as in-line holography and requires three images, taken with different phase shifts between undiffracted and diffracted electrons induced by a suitable phase-shifting device. The proposed method is applicable…
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A method is described for the reconstruction of the amplitude and phase of the object exit wave function by phase-plate transmission electron microscopy. The proposed method can be considered as in-line holography and requires three images, taken with different phase shifts between undiffracted and diffracted electrons induced by a suitable phase-shifting device. The proposed method is applicable for arbitrary object exit wave functions and non-linear image formation. Verification of the method is performed for examples of a simulated crystalline object wave function and a wave function acquired with off-axis holography. The impact of noise on the reconstruction of the wave function is investigated.
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Submitted 23 September, 2010;
originally announced September 2010.
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Increase of the mean inner Coulomb potential in Au clusters induced by surface tension and its implication for electron scattering
Authors:
R. Popescu,
E. Mueller,
M. Wanner,
D. Gerthsen,
M. Scowalter,
A. Rosenauer,
A. Boettcher,
D. Loeffler,
P. Weis
Abstract:
Electron holography in a transmission electron microscope was applied to measure the phase shift induced by Au clusters as a function of the cluster size. Large phase shifts Df observed for small Au clusters cannot be described by the well-known equation Df=C_E V_0 t (C_E: interaction constant, V_0: mean inner Coulomb potential (MIP) of bulk gold, t: cluster thickness). The rapid increase of the…
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Electron holography in a transmission electron microscope was applied to measure the phase shift induced by Au clusters as a function of the cluster size. Large phase shifts Df observed for small Au clusters cannot be described by the well-known equation Df=C_E V_0 t (C_E: interaction constant, V_0: mean inner Coulomb potential (MIP) of bulk gold, t: cluster thickness). The rapid increase of the Au MIP with decreasing cluster size derived from Df, can be explained by the compressive strain of surface atoms in the cluster.
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Submitted 8 May, 2007;
originally announced May 2007.
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Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InGaAs
Authors:
D. Litvinov,
D. Gerthsen,
A. Rosenauer,
M. Schowalter,
T. Passow,
P. Feinaeugle,
M. Hetterich
Abstract:
We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. The parameters were chosen to grow layers slightly above and below the transition between the two- and t…
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We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. The parameters were chosen to grow layers slightly above and below the transition between the two- and three-dimensional growth mode. In-concentration profiles were obtained from high-resolution TEM images by composition evaluation by lattice fringe analysis. The measured profiles can be well described applying the segregation model of Muraki et al. [Appl. Phys. Lett. 61 (1992) 557]. Calculated photoluminescence peak positions on the basis of the measured concentration profiles are in good agreement with the experimental ones. Evaluating experimental In-concentration profiles it is found that the transition from the two-dimensional to the three-dimensional growth mode occurs if the indium content in the In-floating layer exceeds 1.1+/-0.2 monolayers. The measured exponential decrease of the In-concentration within the cap layer on top of the islands reveals that the In-floating layer is not consumed during island formation. The segregation efficiency above the islands is increased compared to the quantum wells which is explained tentatively by strain-dependent lattice-site selection of In. In addition, In0.25Ga0.75As quantum wells were grown at different temperatures between 500 oC and 550 oC. The evaluation of concentration profiles shows that the segregation efficiency increases from R=0.65 to R=0.83.
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Submitted 8 May, 2006;
originally announced May 2006.
