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Fast unconditional reset and leakage reduction in fixed-frequency transmon qubits
Authors:
Liangyu Chen,
Simon Pettersson Fors,
Zixian Yan,
Anaida Ali,
Tahereh Abad,
Amr Osman,
Eleftherios Moschandreou,
Benjamin Lienhard,
Sandoko Kosen,
Hang-Xi Li,
Daryoush Shiri,
Tong Liu,
Stefan Hill,
Abdullah-Al Amin,
Robert Rehammar,
Mamta Dahiya,
Andreas Nylander,
Marcus Rommel,
Anita Fadavi Roudsari,
Marco Caputo,
Grönberg Leif,
Joonas Govenius,
Miroslav Dobsicek,
Michele Faucci Giannelli,
Anton Frisk Kockum
, et al. (2 additional authors not shown)
Abstract:
The realization of fault-tolerant quantum computing requires the execution of quantum error-correction (QEC) schemes, to mitigate the fragile nature of qubits. In this context, to ensure the success of QEC, a protocol capable of implementing both qubit reset and leakage reduction is highly desirable. We demonstrate such a protocol in an architecture consisting of fixed-frequency transmon qubits pa…
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The realization of fault-tolerant quantum computing requires the execution of quantum error-correction (QEC) schemes, to mitigate the fragile nature of qubits. In this context, to ensure the success of QEC, a protocol capable of implementing both qubit reset and leakage reduction is highly desirable. We demonstrate such a protocol in an architecture consisting of fixed-frequency transmon qubits pair-wise coupled via tunable couplers -- an architecture that is compatible with the surface code. We use tunable couplers to transfer any undesired qubit excitation to the readout resonator of the qubit, from which this excitation decays into the feedline. In total, the combination of qubit reset, leakage reduction, and coupler reset takes only 83ns to complete. Our reset scheme is fast, unconditional, and achieves fidelities well above 99%, thus enabling fixed-frequency qubit architectures as future implementations of fault-tolerant quantum computers. Our protocol also provides a means to both reduce QEC cycle runtime and improve algorithmic fidelity on quantum computers.
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Submitted 7 October, 2024; v1 submitted 25 September, 2024;
originally announced September 2024.
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Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging
Authors:
Lert Chayanun,
Janka Biznárová,
Lunjie Zeng,
Per Malmberg,
Andreas Nylander,
Amr Osman,
Marcus Rommel,
Pui Lam Tam,
Eva Olsson,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconduct…
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We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the $Q_i$. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300$°$C, or in-situ post-deposition oxidation of the film's top surface. We find no improvement due to excessive pumping meant to reach a background pressure below $6{\times} 10^{-8}$ mbar. We correlate the measured loss with microscopic properties of the substrate-metal interface through characterization with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM).
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Submitted 1 March, 2024;
originally announced March 2024.
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Signal crosstalk in a flip-chip quantum processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Robert Rehammar,
Marco Caputo,
Leif Grönberg,
Jorge Fernández-Pendás,
Anton Frisk Kockum,
Janka Biznárová,
Liangyu Chen,
Christian Križan,
Andreas Nylander,
Amr Osman,
Anita Fadavi Roudsari,
Daryoush Shiri,
Giovanna Tancredi,
Joonas Govenius,
Jonas Bylander
Abstract:
Quantum processors require a signal-delivery architecture with high addressability (low crosstalk) to ensure high performance already at the scale of dozens of qubits. Signal crosstalk causes inadvertent driving of quantum gates, which will adversely affect quantum-gate fidelities in scaled-up devices. Here, we demonstrate packaged flip-chip superconducting quantum processors with signal-crosstalk…
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Quantum processors require a signal-delivery architecture with high addressability (low crosstalk) to ensure high performance already at the scale of dozens of qubits. Signal crosstalk causes inadvertent driving of quantum gates, which will adversely affect quantum-gate fidelities in scaled-up devices. Here, we demonstrate packaged flip-chip superconducting quantum processors with signal-crosstalk performance competitive with those reported in other platforms. For capacitively coupled qubit-drive lines, we find on-resonant crosstalk better than -27 dB (average -37 dB). For inductively coupled magnetic-flux-drive lines, we find less than 0.13 % direct-current flux crosstalk (average 0.05 %). These observed crosstalk levels are adequately small and indicate a decreasing trend with increasing distance, which is promising for further scaling up to larger numbers of qubits. We discuss the implication of our results for the design of a low-crosstalk, on-chip signal delivery architecture, including the influence of a shielding tunnel structure, potential sources of crosstalk, and estimation of crosstalk-induced qubit-gate error in scaled-up quantum processors.
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Submitted 12 September, 2024; v1 submitted 1 March, 2024;
originally announced March 2024.
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Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits
Authors:
Janka Biznárová,
Amr Osman,
Emil Rehnman,
Lert Chayanun,
Christian Križan,
Per Malmberg,
Marcus Rommel,
Christopher Warren,
Per Delsing,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation…
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We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation of loss is achieved by reducing the presence of oxide, a known host of defects, near the substrate-metal interface, by growing aluminum films thicker than 300 nm. A loss analysis of coplanar-waveguide resonators shows that the improvement is owing to a reduction of dielectric loss due to two-level system defects. We perform time-of-flight secondary ion mass spectrometry and observe a reduced presence of oxygen at the substrate-metal interface for the thicker films. The correlation between the enhanced performance and the film thickness is due to the tendency of aluminum to grow in columnar structures of parallel grain boundaries, where the size of the grain depends on the film thickness: transmission electron microscopy imaging shows that the thicker film has larger grains and consequently fewer grain boundaries containing oxide near this interface. These conclusions are supported by numerical simulations of the different loss contributions in the device.
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Submitted 10 October, 2023;
originally announced October 2023.
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Experimentally verified, fast analytic and numerical design of superconducting resonators in flip-chip architectures
Authors:
Hang-Xi Li,
Daryoush Shiri,
Sandoko Kosen,
Marcus Rommel,
Lert Chayanun,
Andreas Nylander,
Robert Rehammar,
Giovanna Tancredi,
Marco Caputo,
Kestutis Grigoras,
Leif Grönberg,
Joonas Govenius,
Jonas Bylander
Abstract:
In superconducting quantum processors, the predictability of device parameters is of increasing importance as many labs scale up their systems to larger sizes in a 3D-integrated architecture. In particular, the properties of superconducting resonators must be controlled well to ensure high-fidelity multiplexed readout of qubits. Here we present a method, based on conformal mapping techniques, to p…
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In superconducting quantum processors, the predictability of device parameters is of increasing importance as many labs scale up their systems to larger sizes in a 3D-integrated architecture. In particular, the properties of superconducting resonators must be controlled well to ensure high-fidelity multiplexed readout of qubits. Here we present a method, based on conformal mapping techniques, to predict a resonator's parameters directly from its 2D cross-section, without computationally heavy and time-consuming 3D simulation. We demonstrate the method's validity by comparing the calculated resonator frequency and coupling quality factor with those obtained through 3D finite-element-method simulation and by measurement of 15 resonators in a flip-chip-integrated architecture. We achieve a discrepancy of less than 2% between designed and measured frequencies, for 6-GHz resonators. We also propose a design method that reduces the sensitivity of the resonant frequency to variations in the inter-chip spacing.
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Submitted 30 August, 2023; v1 submitted 9 May, 2023;
originally announced May 2023.
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Three-wave mixing traveling-wave parametric amplifier with periodic variation of the circuit parameters
Authors:
Anita Fadavi Roudsari,
Daryoush Shiri,
Hampus Renberg Nilsson,
Giovanna Tancredi,
Amr Osman,
Ida-Maria Svensson,
Marina Kudra,
Marcus Rommel,
Jonas Bylander,
Vitaly Shumeiko,
Per Delsing
Abstract:
We report the implementation of a near-quantum-limited, traveling-wave parametric amplifier that uses three-wave mixing (3WM). To favor amplification by 3WM, we use the superconducting nonlinear asymmetric inductive element (SNAIL) loops, biased with a dc magnetic flux. In addition, we equip the device with dispersion engineering features to create a stop-band at the second harmonic of the pump an…
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We report the implementation of a near-quantum-limited, traveling-wave parametric amplifier that uses three-wave mixing (3WM). To favor amplification by 3WM, we use the superconducting nonlinear asymmetric inductive element (SNAIL) loops, biased with a dc magnetic flux. In addition, we equip the device with dispersion engineering features to create a stop-band at the second harmonic of the pump and suppress the propagation of the higher harmonics that otherwise degrade the amplification. With a chain of 440 SNAILs, the amplifier provides up to 20 dB gain and a 3-dB bandwidth of 1 GHz. The added noise by the amplifier is found to be less than one photon.
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Submitted 15 September, 2022;
originally announced September 2022.
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Transmon qubit readout fidelity at the threshold for quantum error correction without a quantum-limited amplifier
Authors:
Liangyu Chen,
Hang-Xi Li,
Yong Lu,
Christopher W. Warren,
Christian J. Križan,
Sandoko Kosen,
Marcus Rommel,
Shahnawaz Ahmed,
Amr Osman,
Janka Biznárová,
Anita Fadavi Roudsari,
Benjamin Lienhard,
Marco Caputo,
Kestutis Grigoras,
Leif Grönberg,
Joonas Govenius,
Anton Frisk Kockum,
Per Delsing,
Jonas Bylander,
Giovanna Tancredi
Abstract:
High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to di…
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High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to distinguish among qubit populations in higher energy levels. Using a machine-learning algorithm to post-process the two-tone measurement results further improves the qubit-state assignment fidelity. We perform single-shot frequency-multiplexed qubit readout, with a 140ns readout time, and demonstrate 99.5% assignment fidelity for two-state readout and 96.9% for three-state readout - without using a quantum-limited amplifier.
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Submitted 11 August, 2022;
originally announced August 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Building Blocks of a Flip-Chip Integrated Superconducting Quantum Processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Daryoush Shiri,
Christopher Warren,
Leif Grönberg,
Jaakko Salonen,
Tahereh Abad,
Janka Biznárová,
Marco Caputo,
Liangyu Chen,
Kestutis Grigoras,
Göran Johansson,
Anton Frisk Kockum,
Christian Križan,
Daniel Pérez Lozano,
Graham Norris,
Amr Osman,
Jorge Fernández-Pendás,
Alberto Ronzani,
Anita Fadavi Roudsari,
Slawomir Simbierowicz,
Giovanna Tancredi,
Andreas Wallraff,
Christopher Eichler
, et al. (2 additional authors not shown)
Abstract:
We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods…
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We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods and discuss the sensitivity of device parameters to variation in interchip spacing. Notably, the additional flip-chip fabrication steps do not degrade the qubit performance compared to our baseline state-of-the-art in single-chip, planar circuits. This integration technique can be extended to the realisation of quantum processors accommodating hundreds of qubits in one module as it offers adequate input/output wiring access to all qubits and couplers.
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Submitted 14 June, 2022; v1 submitted 5 December, 2021;
originally announced December 2021.
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Highly Accurate Determination of Heterogeneously Stacked Van-der-Waals Materials by Optical Microspectroscopy
Authors:
Andreas Hutzler,
Birk Fritsch,
Christian D. Matthus,
Michael P. M. Jank,
Mathias Rommel
Abstract:
The composition of Van-der-Waals heterostructures is conclusively determined using a hybrid evaluation scheme of data acquired by optical microspectroscopy. This scheme deploys a parameter set comprising both change in reflectance and wavelength shift of distinct extreme values in reflectance spectra. Furthermore, the method is supported by an accurate analytical model describing reflectance of mu…
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The composition of Van-der-Waals heterostructures is conclusively determined using a hybrid evaluation scheme of data acquired by optical microspectroscopy. This scheme deploys a parameter set comprising both change in reflectance and wavelength shift of distinct extreme values in reflectance spectra. Furthermore, the method is supported by an accurate analytical model describing reflectance of multilayer systems acquired by optical microspectroscopy. This approach allows uniquely for discrimination of 2D materials like graphene and hBN and, thus, quantitative analysis of Van-der-Waals heterostructures containing structurally very similar materials. The physical model features a transfer matrix method which allows for flexible, modular description of complex optical systems and may easily be extended to individual setups. It accounts for numerical apertures of applied objective lenses and a glass fiber which guides the light into the spectrometer by two individual weighting functions. The scheme is proven by highly accurate quantification of the number of layers of graphene and hBN in Van-der-Waals heterostructures. In this exemplary case, the fingerprint of graphene involves distinct deviations of reflectance accompanied by additional wavelength shifts of extreme values. In contrast to graphene the fingerprint of hBN reveals a negligible deviation in absolute reflectance causing this material being only detectable by spectral shifts of extreme values.
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Submitted 28 May, 2020;
originally announced May 2020.
