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Combinatorial synthesis and characterization of thin film Al1-xRExN (RE = Pr3+, Tb3+) heterostructural alloys
Authors:
Binod Paudel,
John S. Mangum,
Christopher L. Rom,
Kingsley Egbo,
Cheng-Wei Lee,
Harvey Guthrey,
Sean Allen,
Nancy M. Haegel,
Keisuke Yazawa,
Geoff L. Brennecka,
Rebecca W. Smaha
Abstract:
The potential impact of cation-substituted AlN-based materials, such as Al1-xScxN, Al1-xGaxN, and Al1-xBxN, with exceptional electronic, electromechanical, and dielectric properties has spurred research into this broad family of materials. Rare earth (RE) cations are particularly appealing as they could additionally impart optoelectronic or magnetic functionality. However, success in incorporating…
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The potential impact of cation-substituted AlN-based materials, such as Al1-xScxN, Al1-xGaxN, and Al1-xBxN, with exceptional electronic, electromechanical, and dielectric properties has spurred research into this broad family of materials. Rare earth (RE) cations are particularly appealing as they could additionally impart optoelectronic or magnetic functionality. However, success in incorporating a significant level of RE cations into AlN has been limited so far because it is thermodynamically challenging to stabilize such heterostructural alloys. Using combinatorial co-sputtering, we synthesized Al1-xRExN (RE = Pr, Tb) thin films and performed a rapid survey of the composition-structure-property relationships as a function of RE alloying. Under our growth conditions, we observe that Al1-xPrxN maintains a phase-pure wurtzite structure until transitioning to amorphous for x>0.22. Al1-xTbxN exhibits a phase-pure wurtzite structure until x<0.15, then exhibits mixed wurtzite and rocksalt phases for 0.16<x<0.28, and finally becomes amorphous beyond that. Ellipsometry measurements reveal that the absorption onset decreases with increasing rare earth incorporation and has a strong dependence on the phases present. We observe the characteristic cathodoluminescence emission of Pr3+ and Tb3+, respectively. Using this synthesis approach, we have demonstrated incorporation of Pr and Tb into the AlN wurtzite structure up to higher compositions levels than previously reported and made the first measurements of corresponding structural and optoelectronic properties.
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Submitted 14 August, 2024;
originally announced August 2024.
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Synthesis pathways to thin films of stable layered nitrides
Authors:
Andriy Zakutayev,
Matthew Jankousky,
Laszlo Wolf,
Yi Feng,
Christopher L. Rom,
Sage R. Bauers,
Olaf Borkiewicz,
David A. LaVan,
Rebecca W. Smaha,
Vladan Stevanovic
Abstract:
Controlled synthesis of metastable materials away from equilibrium is of interest in materials chemistry. Thin film deposition methods with rapid condensation of vapor precursors can readily synthesize metastable phases, but often struggle to yield the thermodynamic ground state. Growing thermodynamically-stable structures using kinetically-limited synthesis methods in important for practical appl…
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Controlled synthesis of metastable materials away from equilibrium is of interest in materials chemistry. Thin film deposition methods with rapid condensation of vapor precursors can readily synthesize metastable phases, but often struggle to yield the thermodynamic ground state. Growing thermodynamically-stable structures using kinetically-limited synthesis methods in important for practical applications in electronics and energy conversion. Here, we reveal a synthesis pathway to thermodynamically-stable ordered layered ternary nitride materials, and discuss why disordered metastable intermediate phases tend to form. We show that starting from elemental vapor precursors leads to a 3D long-range disordered MgMoN2 thin film metastable intermediate structure, with a layered short-range order that has a low-energy transformation barrier to the layered 2D-like stable structure. This synthesis approach is extended to ScTaN2, MgWN2 and MgTa2N3, and may lead to the synthesis of other layered nitride thin films with unique semiconducting and quantum properties.
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Submitted 11 September, 2024; v1 submitted 25 June, 2024;
originally announced June 2024.
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GdWN$_3$ is a Nitride Perovskite
Authors:
Rebecca W. Smaha,
John S. Mangum,
Neha Yadav,
Christopher L. Rom,
Brian M. Wieliczka,
Baptiste Julien,
Andrew Treglia,
Craig L. Perkins,
Prashun Gorai,
Sage R. Bauers,
Andriy Zakutayev
Abstract:
Nitride perovskites $AB$N$_3$ are an emerging and highly under-explored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel $A$-site cations is one strategy to tune and expand such properties; for example, Gd$^{3+}$ is compelling due to its large magnetic moment, potentially leading to multif…
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Nitride perovskites $AB$N$_3$ are an emerging and highly under-explored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel $A$-site cations is one strategy to tune and expand such properties; for example, Gd$^{3+}$ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN$_3$ is a non-perovskite monoclinic structure. Here, we experimentally show that GdWN$_3$ crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd$_{1-x}$W$_{x}$N$_{3-y}$ with low oxygen content within the bulk of the films. Ex-situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near $x=1$. LeBail fits of synchrotron grazing incidence wide angle X-ray scattering data are consistent with a perovskite ground-state structure. New density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN$_3$ is a distorted $Pnma$ perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN$_3$ is paramagnetic down to $T=2$ K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important stepping stone towards the rapid expansion of the emerging family of nitride perovskites and towards our understanding of their potential multiferroic properties.
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Submitted 9 May, 2024;
originally announced May 2024.
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Bulk synthesis of Zn$_3$WN$_4$ via solid-state metathesis
Authors:
Christopher L. Rom,
Shaun O'Donnell,
Kayla Huang,
Ryan A. Klein,
Morgan J. Kramer,
Rebecca W. Smaha,
Andriy Zakutayev
Abstract:
Ternary nitrides are of growing technological importance, with applications as semiconductors, catalysts, and magnetic materials; however, new synthetic tools are needed to advance materials discovery efforts. Here, we show that Zn$_3$WN$_4$ can be synthesized via metathesis reactions between Li$_6$WN$_4$ and Zn$X_2$ ($X$ = Br, Cl, F). In situ synchrotron powder X-ray diffraction and differential…
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Ternary nitrides are of growing technological importance, with applications as semiconductors, catalysts, and magnetic materials; however, new synthetic tools are needed to advance materials discovery efforts. Here, we show that Zn$_3$WN$_4$ can be synthesized via metathesis reactions between Li$_6$WN$_4$ and Zn$X_2$ ($X$ = Br, Cl, F). In situ synchrotron powder X-ray diffraction and differential scanning calorimetry show that the reaction onset is correlated with the Zn$X_2$ melting point and that product purity is inversely correlated with the reaction's exothermicity. High resolution synchrotron powder X-ray diffraction measurements show that this bulk synthesis produces a structure with substantial cation ordering, as opposed to the disordered structure initially discovered via thin film sputtering. Diffuse reflectance spectroscopy reveals that Zn$_3$WN$_4$ powders exhibit two optical absorption onsets at 2.5 eV and 4.0 eV, indicating wide-bandgap semiconducting behavior and suggesting a small amount of structural disorder. We hypothesize that this synthesis strategy is generalizable because many potential Li-$M$-N precursors (where $M$ is a metal) are available for synthesizing new ternary nitride materials. This work introduces a promising synthesis strategy that will accelerate the discovery of novel functional ternary nitrides and other currently inaccessible materials.
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Submitted 5 January, 2024; v1 submitted 3 January, 2024;
originally announced January 2024.
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Mechanistically-guided materials chemistry: synthesis of new ternary nitrides, CaZrN$_2$ and CaHfN$_2$
Authors:
Christopher L. Rom,
Andrew Novick,
Matthew J. McDermott,
Andrey A. Yakovenko,
Jessica R. Gallawa,
Gia Thinh Tran,
Dominic C. Asebiah,
Emily N. Storck,
Brennan C. McBride,
Rebecca C. Miller,
Amy L. Prieto,
Kristin A. Persson,
Eric Toberer,
Vladan Stevanović,
Andriy Zakutayev,
James R. Neilson
Abstract:
Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrides is difficult, in part because intermediate and product phases often have high cohesive energies that inhibit diffusion. Here, we report the synthesis of two new phases, calcium zirconium nitride (CaZrN$_2$) and calciu…
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Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrides is difficult, in part because intermediate and product phases often have high cohesive energies that inhibit diffusion. Here, we report the synthesis of two new phases, calcium zirconium nitride (CaZrN$_2$) and calcium hafnium nitride (CaHfN$_2$), by solid state metathesis reactions between Ca$_3$N$_2$ and $M$Cl$_4$ ($M$ = Zr, Hf). Although the reaction nominally proceeds to the target phases in a 1:1 ratio of the precursors via Ca$_3$N$_2$ + $M$Cl$_4$ $\rightarrow$ Ca$M$N$_2$ + 2 CaCl$_2$, reactions prepared this way result in Ca-poor materials (Ca$_xM_{2-x}$N$_2$, $x<1$). A small excess of Ca$_3$N$_2$ (ca. 20 mol\%) is needed to yield stoichiometric Ca$M$N$_2$, as confirmed by high-resolution synchrotron powder X-ray diffraction. In situ synchrotron X-ray diffraction studies reveal that nominally stoichiometric reactions produce Zr$^{3+}$ intermediates early in the reaction pathway, and the excess Ca$_3$N$_2$ is needed to reoxidize Zr$^{3+}$ intermediates back to the Zr$^{4+}$ oxidation state of CaZrN$_2$. Analysis of computationally-derived chemical potential diagrams rationalizes this synthetic approach and its contrast from the synthesis of MgZrN$_2$. These findings additionally highlight the utility of in situ diffraction studies and computational thermochemistry to provide mechanistic guidance for synthesis.
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Submitted 30 October, 2023;
originally announced October 2023.
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Bulk and film synthesis pathways to ternary magnesium tungsten nitrides
Authors:
Christopher L. Rom,
Rebecca W. Smaha,
Callan A. Knebel,
Karen N. Heinselman,
James R. Neilson,
Sage R. Bauers,
Andriy Zakutayev
Abstract:
Bulk solid state synthesis of nitride materials usually leads to thermodynamically stable, cation-ordered crystal structures, whereas thin film synthesis tends to favor disordered, metastable phases. This dichotomy is inconvenient both for basic materials discovery, where non-equilibrium thin film synthesis methods can be useful to overcome reaction kinetic barriers, and for practical technology a…
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Bulk solid state synthesis of nitride materials usually leads to thermodynamically stable, cation-ordered crystal structures, whereas thin film synthesis tends to favor disordered, metastable phases. This dichotomy is inconvenient both for basic materials discovery, where non-equilibrium thin film synthesis methods can be useful to overcome reaction kinetic barriers, and for practical technology applications where stable ground state structures are sometimes required. Here, we explore the uncharted Mg-W-N chemical phase space, using rapid thermal annealing to reconcile the differences between thin film and bulk powder syntheses. Combinatorial co-sputtering synthesis from Mg and W targets in a N$_2$ environment yielded cation-disordered Mg-W-N phases in the rocksalt (0.1< Mg/(Mg+W) <0.9), and hexagonal boron nitride (0.7< Mg/(Mg+W) <0.9) structure types. In contrast, bulk synthesis produced a cation-ordered polymorph of MgWN$_2$ that consists of alternating layers of rocksalt-like [MgN$_6$] octahedra and nickeline-like [WN$_6$] trigonal prisms (denoted "rocksaline"). Thermodynamic calculations corroborate these observations, showing rocksaline MgWN$_2$ is stable while other polymorphs are metastable. We also show that rapid thermal annealing can convert disordered rocksalt films to this cation-ordered polymorph near the MgWN$_2$ stoichiometry. Electronic structure calculations suggest that this rocksalt-to-rocksaline structural transformation should also drive a metallic-to-semiconductor transformation. In addition to revealing three new phases (rocksalt MgWN$_2$ and Mg$_3$WN$_4$, hexagonal boron nitride Mg$_3$WN$_4$, and rocksaline MgWN$_2$), these findings highlight how rapid thermal annealing can control polymorphic transformations, adding a new strategy for exploration of thermodynamic stability in uncharted phase spaces.
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Submitted 3 June, 2023;
originally announced June 2023.
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Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN$_2$ thin films with magnetic and semiconducting properties
Authors:
Christopher L. Rom,
Rebecca W. Smaha,
Celeste L. Melamed,
Rekha R. Schnepf,
Karen N. Heinselman,
John S. Mangum,
Sang-Jun Lee,
Stephan Lany,
Laura T. Schelhas,
Ann L. Greenaway,
James R. Neilson,
Sage R. Bauers,
Jennifer S. Andrew,
Adele C. Tamboli
Abstract:
Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show…
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Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show a wide composition tolerance for this wurtzite-like MnSnN$_2$, ranging from $20\% <$ Mn/(Mn+Sn) $< 65$\% with cation disorder across this composition space. Magnetic susceptibility measurements reveal a low-temperature transition ($T^{\mathrm{*}} \approx 10$ K) for MnSnN$_2$ and strong antiferromagnetic correlations, although the ordering below this transition may be complex. This finding contrasts with bulk MnSiN$_2$ and MnGeN$_2$, which exhibited antiferromagnetic ordering above 400 K in previous studies. Spectroscopic ellipsometry identifies an optical absorption onset of 1 eV for the experimentally-synthesized phase exhibiting cation disorder, consistent with the computationally-predicted 1.2 eV bandgap for the cation-ordered structure. Electronic conductivity measurements confirm the semiconducting nature of this new phase by showing increasing conductivity with increasing temperature. This work adds to the set of known semiconductors that are paramagnetic at room temperature and will help guide future work targeted at controlling the structure and properties of semiconducting materials that exhibit magnetic behavior.
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Submitted 14 June, 2022; v1 submitted 7 June, 2022;
originally announced June 2022.
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Selectivity in yttrium manganese oxide synthesis via local chemical potentials in hyperdimensional phase space
Authors:
Paul K. Todd,
Matthew J. McDermott,
Christopher L. Rom,
Adam A. Corrao,
Jonathan J. Denney,
Shyam S. Dwaraknath,
Peter G. Khalifah,
Kristin A. Persson,
James R. Neilson
Abstract:
In sharp contrast to molecular synthesis, materials synthesis is generally presumed to lack selectivity. The few known methods of designing selectivity in solid-state reactions have limited scope, such as topotactic reactions or strain stabilization. This contribution describes a general approach for searching large chemical spaces to identify selective reactions. This novel approach explains the…
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In sharp contrast to molecular synthesis, materials synthesis is generally presumed to lack selectivity. The few known methods of designing selectivity in solid-state reactions have limited scope, such as topotactic reactions or strain stabilization. This contribution describes a general approach for searching large chemical spaces to identify selective reactions. This novel approach explains the ability of a nominally "innocent" Na$_2$CO$_3$ precursor to enable the metathesis synthesis of single-phase Y$_2$Mn$_2$O$_7$ -- an outcome that was previously only accomplished at extreme pressures and which cannot be achieved with closely related precursors of Li$_2$CO$_3$ and K$_2$CO$_3$. By calculating the required change in chemical potential across all possible reactant-product interfaces in an expanded chemical space including Y, Mn, O, alkali metals, and halogens, using thermodynamic parameters obtained from density functional theory calculations, we identify reactions that minimize the thermodynamic competition from intermediates. In this manner, only the Na-based intermediates minimize the distance in the hyperdimensional chemical potential space to Y$_2$Mn$_2$O$_7$, thus providing selective access to a phase which was previously thought to be metastable. Experimental evidence validating this mechanism for pathway-dependent selectivity is provided by intermediates identified from in situ synchrotron-based crystallographic analysis. This approach of calculating chemical potential distances in hyperdimensional compositional spaces provides a general method for designing selective solid-state syntheses that will be useful for gaining access to metastable phases and for identifying reaction pathways that can reduce the synthesis temperature, and cost, of technological materials.
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Submitted 15 August, 2021; v1 submitted 13 April, 2021;
originally announced April 2021.