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Hopf and Bautin bifurcations in a 3D model for pest leafhopper with stage structure and generalist predatory mite
Authors:
Martha Alvarez Ramírez,
Marco Polo García Rivera,
Ahida Ortiz Santos
Abstract:
In a recent paper of Yuan and Zhu (J. Differential Equations 321(2022) 99-129), the nature of dynamics of a generalist predator and prey with stage structure is modeled as a three-dimensional coupled nonlinear differential system. A detailed analysis of the bifurcation shows that the model exhibits a high complexity in its dynamics, which arises from the use of predatory mites as agent for control…
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In a recent paper of Yuan and Zhu (J. Differential Equations 321(2022) 99-129), the nature of dynamics of a generalist predator and prey with stage structure is modeled as a three-dimensional coupled nonlinear differential system. A detailed analysis of the bifurcation shows that the model exhibits a high complexity in its dynamics, which arises from the use of predatory mites as agent for controlling stage structures of tea green leafhopper pest. Unfortunately, there is a mistake in Proposition 2.2, item (3), also the hypothesis in Proposition 3.3 is incorrect. In this paper, we revisit the model and straighten those mentioned errors as in item (3), changed the existing hypothesis by a suitable one and give a corrected proof of Proposition 3.3 in its new form. Also, we show that the model does undergo both Hopf bifurcation and Bautin bifurcation, and numerical examples are given to support the analytic results.
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Submitted 30 July, 2024;
originally announced July 2024.
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The Poisson transport map
Authors:
Pablo López-Rivera,
Yair Shenfeld
Abstract:
We construct a transport map from Poisson point processes onto ultra-log-concave measures over the natural numbers, and show that this map is a contraction. Our approach overcomes the known obstacles to transferring functional inequalities using transport maps in discrete settings, and allows us to deduce a number of functional inequalities for ultra-log-concave measures. In particular, we provide…
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We construct a transport map from Poisson point processes onto ultra-log-concave measures over the natural numbers, and show that this map is a contraction. Our approach overcomes the known obstacles to transferring functional inequalities using transport maps in discrete settings, and allows us to deduce a number of functional inequalities for ultra-log-concave measures. In particular, we provide the currently best known constant in modified logarithmic Sobolev inequalities for ultra-log-concave measures.
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Submitted 2 July, 2024;
originally announced July 2024.
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LLM-Based Intent Processing and Network Optimization Using Attention-Based Hierarchical Reinforcement Learning
Authors:
Md Arafat Habib,
Pedro Enrique Iturria Rivera,
Yigit Ozcan,
Medhat Elsayed,
Majid Bavand,
Raimundus Gaigalas,
Melike Erol-Kantarci
Abstract:
Intent-based network automation is a promising tool to enable easier network management however certain challenges need to be effectively addressed. These are: 1) processing intents, i.e., identification of logic and necessary parameters to fulfill an intent, 2) validating an intent to align it with current network status, and 3) satisfying intents via network optimizing functions like xApps and r…
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Intent-based network automation is a promising tool to enable easier network management however certain challenges need to be effectively addressed. These are: 1) processing intents, i.e., identification of logic and necessary parameters to fulfill an intent, 2) validating an intent to align it with current network status, and 3) satisfying intents via network optimizing functions like xApps and rApps in O-RAN. This paper addresses these points via a three-fold strategy to introduce intent-based automation for O-RAN. First, intents are processed via a lightweight Large Language Model (LLM). Secondly, once an intent is processed, it is validated against future incoming traffic volume profiles (high or low). Finally, a series of network optimization applications (rApps and xApps) have been developed. With their machine learning-based functionalities, they can improve certain key performance indicators such as throughput, delay, and energy efficiency. In this final stage, using an attention-based hierarchical reinforcement learning algorithm, these applications are optimally initiated to satisfy the intent of an operator. Our simulations show that the proposed method can achieve at least 12% increase in throughput, 17.1% increase in energy efficiency, and 26.5% decrease in network delay compared to the baseline algorithms.
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Submitted 10 June, 2024;
originally announced June 2024.
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A Bakry-Émery approach to Lipschitz transportation on manifolds
Authors:
Pablo López-Rivera
Abstract:
On weighted Riemannian manifolds we prove the existence of globally Lipschitz transport maps between the weight (probability) measure and log-Lipschitz perturbations of it, via Kim and Milman's diffusion transport map, assuming that the curvature-dimension condition $\mathrm{CD}(ρ_{1}, \infty)$ holds, as well as a second order version of it, namely $Γ_{3} \geq ρ_{2} Γ_{2}$. We get new results as c…
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On weighted Riemannian manifolds we prove the existence of globally Lipschitz transport maps between the weight (probability) measure and log-Lipschitz perturbations of it, via Kim and Milman's diffusion transport map, assuming that the curvature-dimension condition $\mathrm{CD}(ρ_{1}, \infty)$ holds, as well as a second order version of it, namely $Γ_{3} \geq ρ_{2} Γ_{2}$. We get new results as corollaries to this result, as the preservation of Poincaré's inequality for the exponential measure on $(0,+\infty)$ when perturbed by a log-Lipschitz potential and a new growth estimate for the Monge map pushing forward the gamma distribution on $(0,+\infty)$ (then getting as a particular case the exponential one), via Laguerre's generator.
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Submitted 12 April, 2024; v1 submitted 3 October, 2023;
originally announced October 2023.
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RL meets Multi-Link Operation in IEEE 802.11be: Multi-Headed Recurrent Soft-Actor Critic-based Traffic Allocation
Authors:
Pedro Enrique Iturria Rivera,
Marcel Chenier,
Bernard Herscovici,
Burak Kantarci,
Melike Erol-Kantarci
Abstract:
IEEE 802.11be -Extremely High Throughput-, commercially known as Wireless-Fidelity (Wi-Fi) 7 is the newest IEEE 802.11 amendment that comes to address the increasingly throughput hungry services such as Ultra High Definition (4K/8K) Video and Virtual/Augmented Reality (VR/AR). To do so, IEEE 802.11be presents a set of novel features that will boost the Wi-Fi technology to its edge. Among them, Mul…
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IEEE 802.11be -Extremely High Throughput-, commercially known as Wireless-Fidelity (Wi-Fi) 7 is the newest IEEE 802.11 amendment that comes to address the increasingly throughput hungry services such as Ultra High Definition (4K/8K) Video and Virtual/Augmented Reality (VR/AR). To do so, IEEE 802.11be presents a set of novel features that will boost the Wi-Fi technology to its edge. Among them, Multi-Link Operation (MLO) devices are anticipated to become a reality, leaving Single-Link Operation (SLO) Wi-Fi in the past. To achieve superior throughput and very low latency, a careful design approach must be taken, on how the incoming traffic is distributed in MLO capable devices. In this paper, we present a Reinforcement Learning (RL) algorithm named Multi-Headed Recurrent Soft-Actor Critic (MH-RSAC) to distribute incoming traffic in 802.11be MLO capable networks. Moreover, we compare our results with two non-RL baselines previously proposed in the literature named: Single Link Less Congested Interface (SLCI) and Multi-Link Congestion-aware Load balancing at flow arrivals (MCAA). Simulation results reveal that the MH-RSAC algorithm is able to obtain gains in terms of Throughput Drop Ratio (TDR) up to 35.2% and 6% when compared with the SLCI and MCAA algorithms, respectively. Finally, we observed that our scheme is able to respond more efficiently to high throughput and dynamic traffic such as VR and Web Browsing (WB) when compared with the baselines. Results showed an improvement of the MH-RSAC scheme in terms of Flow Satisfaction (FS) of up to 25.6% and 6% over the the SCLI and MCAA algorithms.
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Submitted 15 March, 2023;
originally announced March 2023.
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Uplink Scheduling in Federated Learning: an Importance-Aware Approach via Graph Representation Learning
Authors:
Marco Skocaj,
Pedro Enrique Iturria Rivera,
Roberto Verdone,
Melike Erol-Kantarci
Abstract:
Federated Learning (FL) has emerged as a promising framework for distributed training of AI-based services, applications, and network procedures in 6G. One of the major challenges affecting the performance and efficiency of 6G wireless FL systems is the massive scheduling of user devices over resource-constrained channels. In this work, we argue that the uplink scheduling of FL client devices is a…
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Federated Learning (FL) has emerged as a promising framework for distributed training of AI-based services, applications, and network procedures in 6G. One of the major challenges affecting the performance and efficiency of 6G wireless FL systems is the massive scheduling of user devices over resource-constrained channels. In this work, we argue that the uplink scheduling of FL client devices is a problem with a rich relational structure. To address this challenge, we propose a novel, energy-efficient, and importance-aware metric for client scheduling in FL applications by leveraging Unsupervised Graph Representation Learning (UGRL). Our proposed approach introduces a relational inductive bias in the scheduling process and does not require the collection of training feedback information from client devices, unlike state-of-the-art importance-aware mechanisms. We evaluate our proposed solution against baseline scheduling algorithms based on recently proposed metrics in the literature. Results show that, when considering scenarios of nodes exhibiting spatial relations, our approach can achieve an average gain of up to 10% in model accuracy and up to 17 times in energy efficiency compared to state-of-the-art importance-aware policies.
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Submitted 27 January, 2023;
originally announced January 2023.
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Hierarchical Deep Q-Learning Based Handover in Wireless Networks with Dual Connectivity
Authors:
Pedro Enrique Iturria Rivera,
Medhat Elsayed,
Majid Bavand,
Raimundas Gaigalas,
Steve Furr,
Melike Erol-Kantarci
Abstract:
5G New Radio proposes the usage of frequencies above 10 GHz to speed up LTE's existent maximum data rates. However, the effective size of 5G antennas and consequently its repercussions in the signal degradation in urban scenarios makes it a challenge to maintain stable coverage and connectivity. In order to obtain the best from both technologies, recent dual connectivity solutions have proved thei…
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5G New Radio proposes the usage of frequencies above 10 GHz to speed up LTE's existent maximum data rates. However, the effective size of 5G antennas and consequently its repercussions in the signal degradation in urban scenarios makes it a challenge to maintain stable coverage and connectivity. In order to obtain the best from both technologies, recent dual connectivity solutions have proved their capabilities to improve performance when compared with coexistent standalone 5G and 4G technologies. Reinforcement learning (RL) has shown its huge potential in wireless scenarios where parameter learning is required given the dynamic nature of such context. In this paper, we propose two reinforcement learning algorithms: a single agent RL algorithm named Clipped Double Q-Learning (CDQL) and a hierarchical Deep Q-Learning (HiDQL) to improve Multiple Radio Access Technology (multi-RAT) dual-connectivity handover. We compare our proposal with two baselines: a fixed parameter and a dynamic parameter solution. Simulation results reveal significant improvements in terms of latency with a gain of 47.6% and 26.1% for Digital-Analog beamforming (BF), 17.1% and 21.6% for Hybrid-Analog BF, and 24.7% and 39% for Analog-Analog BF when comparing the RL-schemes HiDQL and CDQL with the with the existent solutions, HiDQL presented a slower convergence time, however obtained a more optimal solution than CDQL. Additionally, we foresee the advantages of utilizing context-information as geo-location of the UEs to reduce the beam exploration sector, and thus improving further multi-RAT handover latency results.
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Submitted 13 January, 2023;
originally announced January 2023.
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Traffic Steering for 5G Multi-RAT Deployments using Deep Reinforcement Learning
Authors:
Md Arafat Habib,
Hao Zhou,
Pedro Enrique Iturria Rivera,
Medhat Elsayed,
Majid Bavand,
Raimundas Gaigalas,
Steve Furr,
Melike Erol-Kantarci
Abstract:
In 5G non-standalone mode, traffic steering is a critical technique to take full advantage of 5G new radio while optimizing dual connectivity of 5G and LTE networks in multiple radio access technology (RAT). An intelligent traffic steering mechanism can play an important role to maintain seamless user experience by choosing appropriate RAT (5G or LTE) dynamically for a specific user traffic flow w…
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In 5G non-standalone mode, traffic steering is a critical technique to take full advantage of 5G new radio while optimizing dual connectivity of 5G and LTE networks in multiple radio access technology (RAT). An intelligent traffic steering mechanism can play an important role to maintain seamless user experience by choosing appropriate RAT (5G or LTE) dynamically for a specific user traffic flow with certain QoS requirements. In this paper, we propose a novel traffic steering mechanism based on Deep Q-learning that can automate traffic steering decisions in a dynamic environment having multiple RATs, and maintain diverse QoS requirements for different traffic classes. The proposed method is compared with two baseline algorithms: a heuristic-based algorithm and Q-learningbased traffic steering. Compared to the Q-learning and heuristic baselines, our results show that the proposed algorithm achieves better performance in terms of 6% and 10% higher average system throughput, and 23% and 33% lower network delay, respectively.
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Submitted 12 January, 2023;
originally announced January 2023.
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Imaging dynamic exciton interactions and coupling in transition metal dichalcogenides
Authors:
Torben L. Purz,
Eric W. Martin,
William G. Holtzmann,
Pasqual Rivera,
Adam Alfrey,
Kelsey M. Bates,
Hui Deng,
Xiaodong Xu,
Steven T. Cundiff
Abstract:
Transition metal dichalcogenides (TMDs) are regarded as a possible materials platform for quantum information science and related device applications. In TMD monolayers, the dephasing time and inhomogeneity are crucial parameters for any quantum information application. In TMD heterostructures, coupling strength and interlayer exciton lifetimes are also parameters of interest. However, many demons…
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Transition metal dichalcogenides (TMDs) are regarded as a possible materials platform for quantum information science and related device applications. In TMD monolayers, the dephasing time and inhomogeneity are crucial parameters for any quantum information application. In TMD heterostructures, coupling strength and interlayer exciton lifetimes are also parameters of interest. However, many demonstrations in TMDs can only be realized at specific spots on the sample, presenting a challenge to the scalability of these applications. Here, using multi-dimensional coherent imaging spectroscopy (MDCIS), we shed light on the underlying physics - including dephasing, inhomogeneity, and strain - for a MoSe$_2$ monolayer and identify both promising and unfavorable areas for quantum information applications. We furthermore apply the same technique to a MoSe$_2$/WSe$_2$ heterostructure. Despite the notable presence of strain and dielectric environment changes, coherent and incoherent coupling, as well as interlayer exciton lifetimes are mostly robust across the sample. This uniformity is despite a significantly inhomogeneous interlayer exciton photoluminescence distribution that suggests a bad sample for device applications. This robustness strengthens the case for TMDs as a next-generation materials platform in quantum information science and beyond.
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Submitted 18 February, 2022;
originally announced February 2022.
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Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods
Authors:
Jovan Maksimovic,
Jingwen Hu,
Soon Hock Ng,
Tomas Katkus,
Gediminas Seniutinas,
Tatiana Pinedo Rivera,
Michael Stuiber,
Yoshiaki Nishijima,
Sajeev John,
Saulius Juodkazis
Abstract:
Light trapping photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond the efficiency limit implied by the Lambertian limit of ray trapping 29%. The interference and slow light effects are harnessed for collecting light ev…
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Light trapping photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond the efficiency limit implied by the Lambertian limit of ray trapping 29%. The interference and slow light effects are harnessed for collecting light even at the long wavelengths near the Si band-gap. We compare two different methods for surface patterning, that can be extended to large area surface patterning: 1) laser direct write and 2) step-&-repeat 5-times reduction projection lithography. Large area throughput limitations of these methods are compared with the established electron beam lithography (EBL) route, which is conventionally utilised but much slower than the presented methods. Spectral characterisation of the PhC light trapping is compared for samples fabricated by different methods. Reflectance of Si etched via laser patterned mask was 7% at visible wavelengths and was comparable with Si patterned via EBL made mask. The later pattern showed a stronger absorbance than the Lambertian limit (M.-L. Hsieh et al., Sci. Rep. 10, 11857 (2020)).
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Submitted 31 December, 2021;
originally announced December 2021.
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Competitive Multi-Agent Load Balancing with Adaptive Policies in Wireless Networks
Authors:
Pedro Enrique Iturria Rivera,
Melike Erol-Kantarci
Abstract:
Using Machine Learning (ML) techniques for the next generation wireless networks have shown promising results in the recent years, due to high learning and adaptation capability of ML algorithms. More specifically, ML techniques have been used for load balancing in Self-Organizing Networks (SON). In the context of load balancing and ML, several studies propose network management automation (NMA) f…
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Using Machine Learning (ML) techniques for the next generation wireless networks have shown promising results in the recent years, due to high learning and adaptation capability of ML algorithms. More specifically, ML techniques have been used for load balancing in Self-Organizing Networks (SON). In the context of load balancing and ML, several studies propose network management automation (NMA) from the perspective of a single and centralized agent. However, a single agent domain does not consider the interaction among the agents. In this paper, we propose a more realistic load balancing approach using novel Multi-Agent Deep Deterministic Policy Gradient with Adaptive Policies (MADDPG-AP) scheme that considers throughput, resource block utilization and latency in the network. We compare our proposal with a single-agent RL algorithm named Clipped Double Q-Learning (CDQL) . Simulation results reveal a significant improvement in latency, packet loss ratio and convergence time
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Submitted 13 October, 2021;
originally announced October 2021.
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QoS-Aware Load Balancing in Wireless Networks using Clipped Double Q-Learning
Authors:
Pedro Enrique Iturria Rivera,
Melike Erol-Kantarci
Abstract:
In recent years, long-term evolution (LTE) and 5G NR (5th Generation New Radio) technologies have showed great potential to utilize Machine Learning (ML) algorithms in optimizing their operations, both thanks to the availability of fine-grained data from the field, as well as the need arising from growing complexity of networks. The aforementioned complexity sparked mobile operators' attention as…
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In recent years, long-term evolution (LTE) and 5G NR (5th Generation New Radio) technologies have showed great potential to utilize Machine Learning (ML) algorithms in optimizing their operations, both thanks to the availability of fine-grained data from the field, as well as the need arising from growing complexity of networks. The aforementioned complexity sparked mobile operators' attention as a way to reduce the capital expenditures (CAPEX) and the operational (OPEX) expenditures of their networks through network management automation (NMA). NMA falls under the umbrella of Self-Organizing Networks (SON) in which 3GPP has identified some challenges and opportunities in load balancing mechanisms for the Radio Access Networks (RANs). In the context of machine learning and load balancing, several studies have focused on maximizing the overall network throughput or the resource block utilization (RBU). In this paper, we propose a novel Clipped Double Q-Learning (CDQL)-based load balancing approach considering resource block utilization, latency and the Channel Quality Indicator (CQI). We compare our proposal with a traditional handover algorithm and a resource block utilization based handover mechanism. Simulation results reveal that our scheme is able to improve throughput, latency, jitter and packet loss ratio in comparison to the baseline algorithms.
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Submitted 9 July, 2021;
originally announced July 2021.
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Coherent exciton-exciton interactions and exciton dynamics in a MoSe\textsubscript{2}/WSe\textsubscript{2} heterostructure
Authors:
Torben L. Purz,
Eric W. Martin,
Pasqual Rivera,
William G. Holtzmann,
Xiaodong Xu,
Steven T. Cundiff
Abstract:
Coherent coupling between excitons is at the heart of many-body interactions with transition metal dichalcogenide (TMD) heterostructures as an emergent platform for the investigation of these interactions. We employ multi-dimensional coherent spectroscopy on monolayer MoSe\textsubscript{2}/WSe\textsubscript{2} heterostructures and observe coherent coupling between excitons spatially localized in m…
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Coherent coupling between excitons is at the heart of many-body interactions with transition metal dichalcogenide (TMD) heterostructures as an emergent platform for the investigation of these interactions. We employ multi-dimensional coherent spectroscopy on monolayer MoSe\textsubscript{2}/WSe\textsubscript{2} heterostructures and observe coherent coupling between excitons spatially localized in monolayer MoSe$_2$ and WSe$_2$. Through many-body spectroscopy, we further observe the absorption state arising from free interlayer electron-hole pairs. This observation yields a spectroscopic measurement of the interlayer exciton binding energy of about 250 meV.
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Submitted 7 June, 2021;
originally announced June 2021.
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Insights into hyperbolic phonon polaritons in hBN using Raman scattering from encapsulated transition metal dichalcogenide layers
Authors:
Jacob J. S. Viner,
Liam P. McDonnell,
Pasqual Rivera,
Xiaodong Xu,
David C. Smith
Abstract:
New techniques for probing hyperbolic phonon polaritons (HPP) in 2D materials will support the development of the emerging technologies in this field. Previous reports have shown that it is possible for WSe2 monolayers in contact with the hexagonal boron nitride (hBN) to generate HPP in the hBN via Raman scattering. In this paper, we set out new results on HPP Raman scattering induced in hBN by WS…
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New techniques for probing hyperbolic phonon polaritons (HPP) in 2D materials will support the development of the emerging technologies in this field. Previous reports have shown that it is possible for WSe2 monolayers in contact with the hexagonal boron nitride (hBN) to generate HPP in the hBN via Raman scattering. In this paper, we set out new results on HPP Raman scattering induced in hBN by WSe2 and MoSe2 monolayers including new resonances at which the Raman scattering is enhanced. Analysis of the observed Raman lineshapes demonstrates that Raman scattering allows HPP with wavevectors with magnitudes significantly in excess of 15000 cm-1 to be probed. We present evidence that the Raman scattering can probe HPP with frequencies less than the expected lower bound on the Reststrahlen band suggesting new HPP physics still waits to be discovered.
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Submitted 15 September, 2021; v1 submitted 1 April, 2021;
originally announced April 2021.
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Excited Rydberg States in TMD Heterostructures
Authors:
Jacob J. S. Viner,
Liam P. McDonnell,
David A. Ruiz-Tijerina,
Pasqual Rivera,
Xiaodong Xu,
Vladimir I. Fal'ko,
David C. Smith
Abstract:
The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent ferromagnetism. This paper presents measurements of key excitonic energy levels in MoSe2/WSe2 heterostructures. These measurements are obtained from resonance Raman…
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The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent ferromagnetism. This paper presents measurements of key excitonic energy levels in MoSe2/WSe2 heterostructures. These measurements are obtained from resonance Raman experiments on specific Raman peaks only observed at excited states of the excitons. This data is used to validate a model of the Coulomb potential in these structures which predicts the exciton energies to within ~5 meV / 2.5%. This model is used to determine the effect of heterostructure formation on the single-particle band gaps of the layers and will have a wide applicability in designing the next generation of more complex transition metal dichalcogenide structures.
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Submitted 16 March, 2021;
originally announced March 2021.
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Intrinsic Donor-Bound Excitons in Ultraclean Monolayer Semiconductors
Authors:
Pasqual Rivera,
Minhao He,
Bumho Kim,
Song Liu,
Carmen Rubio-Verdú,
Hyowon Moon,
Lukas Mennel,
Daniel A. Rhodes,
Hongyi Yu,
Takashi Taniguchi,
Kenji Watanabe,
Jiaqiang Yan,
David G. Mandrus,
Hanan Dery,
Abhay Pasupathy,
Dirk Englund,
James Hone,
Wang Yao,
Xiaodong Xu
Abstract:
The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy sepa…
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The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (> 6 $μ$s) and polarization lifetimes (> 100 ns). Resonant excitation of the free inter- and intra-valley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellites photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.
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Submitted 12 January, 2021;
originally announced January 2021.
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Personal Mental Health Navigator: Harnessing the Power of Data, Personal Models, and Health Cybernetics to Promote Psychological Well-being
Authors:
Amir M. Rahmani,
Jocelyn Lai,
Salar Jafarlou,
Asal Yunusova,
Alex. P. Rivera,
Sina Labbaf,
Sirui Hu,
Arman Anzanpour,
Nikil Dutt,
Ramesh Jain,
Jessica L. Borelli
Abstract:
Traditionally, the regime of mental healthcare has followed an episodic psychotherapy model wherein patients seek care from a provider through a prescribed treatment plan developed over multiple provider visits. Recent advances in wearable and mobile technology have generated increased interest in digital mental healthcare that enables individuals to address episodic mental health symptoms. Howeve…
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Traditionally, the regime of mental healthcare has followed an episodic psychotherapy model wherein patients seek care from a provider through a prescribed treatment plan developed over multiple provider visits. Recent advances in wearable and mobile technology have generated increased interest in digital mental healthcare that enables individuals to address episodic mental health symptoms. However, these efforts are typically reactive and symptom-focused and do not provide comprehensive, wrap-around, customized treatments that capture an individual's holistic mental health model as it unfolds over time. Recognizing that each individual is unique, we present the notion of Personalized Mental Health Navigation (MHN): a therapist-in-the-loop, cybernetic goal-based system that deploys a continuous cyclic loop of measurement, estimation, guidance, to steer the individual's mental health state towards a healthy zone. We outline the major components of MHN that is premised on the development of an individual's personal mental health state, holistically represented by a high-dimensional cover of multiple knowledge layers such as emotion, biological patterns, sociology, behavior, and cognition. We demonstrate the feasibility of the personalized MHN approach via a 12-month pilot case study for holistic stress management in college students and highlight an instance of a therapist-in-the-loop intervention using MHN for monitoring, estimating, and proactively addressing moderately severe depression over a sustained period of time. We believe MHN paves the way to transform mental healthcare from the current passive, episodic, reactive process (where individuals seek help to address symptoms that have already manifested) to a continuous and navigational paradigm that leverages a personalized model of the individual, promising to deliver timely interventions to individuals in a holistic manner.
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Submitted 15 December, 2020;
originally announced December 2020.
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Spectral band selection for vegetation properties retrieval using Gaussian processes regression
Authors:
Jochem Verrelst,
Juan Pablo Rivera,
Anatoly Gitelson,
Jesus Delegido,
José Moreno,
Gustau Camps-Valls
Abstract:
With current and upcoming imaging spectrometers, automated band analysis techniques are needed to enable efficient identification of most informative bands to facilitate optimized processing of spectral data into estimates of biophysical variables. This paper introduces an automated spectral band analysis tool (BAT) based on Gaussian processes regression (GPR) for the spectral analysis of vegetati…
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With current and upcoming imaging spectrometers, automated band analysis techniques are needed to enable efficient identification of most informative bands to facilitate optimized processing of spectral data into estimates of biophysical variables. This paper introduces an automated spectral band analysis tool (BAT) based on Gaussian processes regression (GPR) for the spectral analysis of vegetation properties. The GPR-BAT procedure sequentially backwards removes the least contributing band in the regression model for a given variable until only one band is kept. GPR-BAT is implemented within the framework of the free ARTMO's MLRA (machine learning regression algorithms) toolbox, which is dedicated to the transforming of optical remote sensing images into biophysical products. GPR-BAT allows (1) to identify the most informative bands in relating spectral data to a biophysical variable, and (2) to find the least number of bands that preserve optimized accurate predictions. This study concludes that a wise band selection of hyperspectral data is strictly required for optimal vegetation properties mapping.
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Submitted 7 December, 2020;
originally announced December 2020.
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Multi Agent Team Learning in Disaggregated Virtualized Open Radio Access Networks (O-RAN)
Authors:
Pedro Enrique Iturria Rivera,
Shahram Mollahasani,
Melike Erol-Kantarci
Abstract:
Starting from the Cloud Radio Access Network (C-RAN), continuing with the virtual Radio Access Network (vRAN) and most recently with Open RAN (O-RAN) initiative, Radio Access Network (RAN) architectures have significantly evolved in the past decade. In the last few years, the wireless industry has witnessed a strong trend towards disaggregated, virtualized and open RANs, with numerous tests and de…
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Starting from the Cloud Radio Access Network (C-RAN), continuing with the virtual Radio Access Network (vRAN) and most recently with Open RAN (O-RAN) initiative, Radio Access Network (RAN) architectures have significantly evolved in the past decade. In the last few years, the wireless industry has witnessed a strong trend towards disaggregated, virtualized and open RANs, with numerous tests and deployments world wide. One unique aspect that motivates this paper is the availability of new opportunities that arise from using machine learning to optimize the RAN in closed-loop, i.e. without human intervention, where the complexity of disaggregation and virtualization makes well-known Self-Organized Networking (SON) solutions inadequate. In our view, Multi-Agent Systems (MASs) with team learning, can play an essential role in the control and coordination of controllers of O-RAN, i.e. near-real-time and non-real-time RAN Intelligent Controller (RIC). In this article, we first present the state-of-the-art research in multi-agent systems and team learning, then we provide an overview of the landscape in RAN disaggregation and virtualization, as well as O-RAN which emphasizes the open interfaces introduced by the O-RAN Alliance. We present a case study for agent placement and the AI feedback required in O-RAN, and finally, we identify challenges and open issues to provide a roadmap for researchers.
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Submitted 22 February, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Active Learning Methods for Efficient Hybrid Biophysical Variable Retrieval
Authors:
ochem Verrelst,
Sara Dethier,
Juan Pablo Rivera,
Jordi Muñoz-Marí,
Gustau Camps-Valls,
José Moreno
Abstract:
Kernel-based machine learning regression algorithms (MLRAs) are potentially powerful methods for being implemented into operational biophysical variable retrieval schemes. However, they face difficulties in coping with large training datasets. With the increasing amount of optical remote sensing data made available for analysis and the possibility of using a large amount of simulated data from rad…
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Kernel-based machine learning regression algorithms (MLRAs) are potentially powerful methods for being implemented into operational biophysical variable retrieval schemes. However, they face difficulties in coping with large training datasets. With the increasing amount of optical remote sensing data made available for analysis and the possibility of using a large amount of simulated data from radiative transfer models (RTMs) to train kernel MLRAs, efficient data reduction techniques will need to be implemented. Active learning (AL) methods enable to select the most informative samples in a dataset. This letter introduces six AL methods for achieving optimized biophysical variable estimation with a manageable training dataset, and their implementation into a Matlab-based MLRA toolbox for semi-automatic use. The AL methods were analyzed on their efficiency of improving the estimation accuracy of leaf area index and chlorophyll content based on PROSAIL simulations. Each of the implemented methods outperformed random sampling, improving retrieval accuracy with lower sampling rates. Practically, AL methods open opportunities to feed advanced MLRAs with RTM-generated training data for development of operational retrieval models.
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Submitted 7 December, 2020;
originally announced December 2020.
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Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering
Authors:
Liam P. McDonnell,
Jacob J. S. Viner,
David A. Ruiz-Tijerina,
Pasqual Rivera,
Xiaodong Xu,
Vladimir I. Fal'ko,
David C. Smith
Abstract:
Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer…
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Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe$_2$/WSe$_2$ heterostructures, strong hybridization occurs between the holes in the spin-split valence band of WSe$_2$ and in the top valence band of MoSe$_2$, especially when both are bound to the same electron in the lowest conduction band of WSe$_2$. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe$_2$/WSe$_2$ structures, by observing scattering of specific excitons by phonons in both WSe$_2$ and MoSe$_2$. We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials.
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Submitted 5 October, 2020;
originally announced October 2020.
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Experimental realisation of Dual Periodicity Moiré Superlattice in a MoSe$_2$/WSe$_2$ Heterobilayer
Authors:
Liam P. McDonnell,
Jacob J. S. Viner,
Pasqual Rivera,
Antonio Cammarata,
Huseyin S. Sen,
Xiaodong Xu,
David C. Smith
Abstract:
Moiré structures in van der Waals heterostructures lead to emergent phenomena including superconductivity in twisted bilayer graphene and optically accessible strongly-correlated electron states in transition metal dichalcogenide heterobilayers. Dual periodicity moiré structures (DPMS) formed in layered structures with more than two layers have been shown to lead to ferromagnetism and multiple sec…
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Moiré structures in van der Waals heterostructures lead to emergent phenomena including superconductivity in twisted bilayer graphene and optically accessible strongly-correlated electron states in transition metal dichalcogenide heterobilayers. Dual periodicity moiré structures (DPMS) formed in layered structures with more than two layers have been shown to lead to ferromagnetism and multiple secondary Dirac points in TBG. Whilst in principle it is possible to obtain DPMS in bilayers there has not been clear experimental evidence of this yet. In this paper we present signatures of DPMS in a twisted MoSe$_2$/WSe$_2$ bilayer revealed by resonance Raman spectroscopy. We observed zone-folded acoustic and optical phonon modes with a wavevector twice of the moiré wavevector, evidence of a dual periodicity moiré heterostructure. These results simultaneously open up opportunities for new emergent phenomena and an optical method for characterising DPMS in a wide range of van der Waals heterostructures.
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Submitted 16 September, 2020;
originally announced September 2020.
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Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe$_2$ and WSe$_2$ Monolayers
Authors:
Liam P. McDonnell,
Jacob Viner,
Pasqual Rivera,
Xiaodong Xu,
David C. Smith
Abstract:
We present a high-resolution resonance Raman study of hBN encapsulated MoSe$_2$ and WSe$_2$ monolayers at 4 K using excitation energies from 1.6 eV to 2.25 eV. We report resonances with the WSe$_2$ A2s and MoSe$_2$ A2s and B2s excited Rydberg states despite their low oscillator strength. When resonant with the 2s states we identify new Raman peaks which are associated with intravalley scattering b…
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We present a high-resolution resonance Raman study of hBN encapsulated MoSe$_2$ and WSe$_2$ monolayers at 4 K using excitation energies from 1.6 eV to 2.25 eV. We report resonances with the WSe$_2$ A2s and MoSe$_2$ A2s and B2s excited Rydberg states despite their low oscillator strength. When resonant with the 2s states we identify new Raman peaks which are associated with intravalley scattering between different Rydberg states via optical phonons. By calibrating the Raman scattering efficiency and separately constraining the electric dipole matrix elements, we reveal that the scattering rates for k=0 optical phonons are comparable for both 1s and 2s states despite differences in the envelope functions. We also observe multiple new dispersive Raman peaks including a peak at the WSe$_2$ A2s resonance that demonstrates non-linear dispersion and peak-splitting behavior that suggests that the dispersion relations for dark excitonic states at energies near the 2s state are extremely complex.
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Submitted 10 June, 2020;
originally announced June 2020.
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Monolayer Semiconductor Auger Detector
Authors:
Colin M. Chow,
Hongyi Yu,
John R. Schaibley,
Pasqual Rivera,
Joseph Finney,
Jiaqiang Yan,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Wang Yao,
David H. Cobden,
Xiaodong Xu
Abstract:
Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auge…
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Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We employ vertical van der Waals (vdW) heterostructures with monolayer WSe2 as the semiconductor and the wide band gap hexagonal boron nitride (hBN) as the tunnel barrier to preferentially transmit high-energy Auger-excited carriers to a graphite electrode. The unambiguous signatures of Auger processes are a rise in the photocurrent when excitons are created by resonant excitation, and negative differential photoconductance resulting from the shifts of the exciton resonances with voltage. We detect holes Auger-excited by both neutral and charged excitons, and find that the Auger scattering is surprisingly strong under weak excitation. The selective extraction of Auger carriers at low, controlled carrier densities that is enabled by vdW heterostructures illustrates an important addition to the techniques available for probing relaxation processes in 2D materials.
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Submitted 21 April, 2020;
originally announced April 2020.
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Valley Phonons and Exciton Complexes in a Monolayer Semiconductor
Authors:
Minhao He,
Pasqual Rivera,
Dinh Van Tuan,
Nathan P. Wilson,
Min Yang,
Takashi Taniguchi,
Kenji Watanabe,
Jiaqiang Yan,
David G. Mandrus,
Hongyi Yu,
Hanan Dery,
Wang Yao,
Xiaodong Xu
Abstract:
The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coul…
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The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes in the monolayer semiconductor WSe2. From Lande g-factor and polarization analyses of photoluminescence peaks, we find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncovered an intervalley exciton near charge neutrality, and extract its short-range electron-hole exchange interaction to be about 10 meV. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.
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Submitted 6 January, 2020;
originally announced January 2020.
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One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers
Authors:
Yusong Bai,
Lin Zhou,
Jue Wang,
Wenjing Wu,
Leo McGilly,
Dorri Halbertal,
Chiu Fan B. Lo,
Fang Liu,
Jenny Ardelean,
Pasqual Rivera,
Nathan R. Finney,
Xuchen Yang,
Dmitri N. Basov,
Wang Yao,
Xiaodong Xu,
James Hone,
Abhay Pasupathy,
Xiaoyang Zhu
Abstract:
The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental…
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The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.
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Submitted 5 April, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Quantum Enhancements via Tribracket Brackets
Authors:
Laira Aggarwal,
Sam Nelson,
Patricia Rivera
Abstract:
We enhance the tribracket counting invariant with \textit{tribracket brackets}, skein invariants of tribracket-colored oriented knots and links analogously to biquandle brackets. This infinite family of invariants includes the classical quantum invariants and tribracket cocycle invariants as special cases, as well as new invariants. We provide explicit examples as well as questions for future work…
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We enhance the tribracket counting invariant with \textit{tribracket brackets}, skein invariants of tribracket-colored oriented knots and links analogously to biquandle brackets. This infinite family of invariants includes the classical quantum invariants and tribracket cocycle invariants as special cases, as well as new invariants. We provide explicit examples as well as questions for future work.
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Submitted 18 November, 2023; v1 submitted 5 July, 2019;
originally announced July 2019.
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Signatures of moiré-trapped valley excitons in MoSe$_2$/WSe$_2$ heterobilayers
Authors:
Kyle L. Seyler,
Pasqual Rivera,
Hongyi Yu,
Nathan P. Wilson,
Essance L. Ray,
David Mandrus,
Jiaqiang Yan,
Wang Yao,
Xiaodong Xu
Abstract:
The creation of moiré patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moiré pattern with a superlattice potential can form by vertically stacking two layered materials with a twist and/or finite lattice constant difference. This unique approach has led to emergen…
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The creation of moiré patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moiré pattern with a superlattice potential can form by vertically stacking two layered materials with a twist and/or finite lattice constant difference. This unique approach has led to emergent electronic phenomena, including the fractal quantum Hall effect, tunable Mott insulators, and unconventional superconductivity. Furthermore, theory predicts intriguing effects on optical excitations by a moiré potential in 2D valley semiconductors, but these signatures have yet to be experimentally detected. Here, we report experimental evidence of interlayer valley excitons trapped in a moiré potential in MoSe$_2$/WSe$_2$ heterobilayers. At low temperatures, we observe photoluminescence near the free interlayer exciton energy but with over 100 times narrower linewidths. The emitter g-factors are homogeneous across the same sample and only take two values, -15.9 and 6.7, in samples with twisting angles near 60° and 0°, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley pairing configurations. At a twist angle near 20°, the emitters become two orders of magnitude dimmer, but remarkably, they possess the same g-factor as the heterobilayer near 60°. This is consistent with the Umklapp recombination of interlayer excitons near the commensurate 21.8° twist angle. The emitters exhibit strong circular polarization, which implies the preservation of three-fold rotation symmetry by the trapping potential. Together with the power and excitation energy dependence, all evidence points to their origin as interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics.
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Submitted 12 September, 2018;
originally announced September 2018.
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Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
Authors:
Jason S. Ross,
Pasqual Rivera,
John Schaibley,
Eric Lee-Wong,
Hongyi Yu,
Takashi Taniguchi,
Kenji Watanabe,
Jiaqiang Yan,
David Mandrus,
David Cobden,
Wang Yao,
Xiaodong Xu
Abstract:
Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb-bound electrons and holes…
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Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb-bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe2-WSe2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller compared to the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is two orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.
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Submitted 3 January, 2017;
originally announced January 2017.
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Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures
Authors:
John R. Schaibley,
Pasqual Rivera,
Hongyi Yu,
Kyle L. Seyler,
Jiaqiang Yan,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Wang Yao,
Xiaodong Xu
Abstract:
Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here…
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Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using nondegenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in 2D spin/valleytronic devices for storing and processing information.
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Submitted 14 December, 2016;
originally announced December 2016.
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Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy
Authors:
Neil R. Wilson,
Paul V. Nguyen,
Kyle L. Seyler,
Pasqual Rivera,
Alexander J. Marsden,
Zachary P. L. Laker,
Gabriel C. Constantinescu,
Viktor Kandyba,
Alexei Barinov,
Nicholas D. M. Hine,
Xiaodong Xu,
David H. Cobden
Abstract:
Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of an…
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Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of angle-resolved photoemission spectroscopy with submicron spatial resolution (μ-ARPES) offers the capability to measure small samples, but the energy resolution obtained for such exfoliated samples to date (~0.5 eV) has been inadequate. Here, we show that by suitable heterostructure sample design the full potential of μ-ARPES can be realized. We focus on MoSe2/WSe2 van der Waals heterostructures, which are 2D analogs of 3D semiconductor heterostructures. We find that in a MoSe2/WSe2 heterobilayer the bands in the K valleys are weakly hybridized, with the conduction and valence band edges originating in the MoSe2 and WSe2 respectively. There is stronger hybridization at the Γ point, but the valence band edge remains at the K points. This is consistent with the recent observation of interlayer excitons where the electron and hole are valley polarized but in opposite layers. We determine the valence band offset to be 300 meV, which combined with photoluminescence measurements implies that the binding energy of interlayer excitons is at least 200 meV, comparable with that of intralayer excitons.
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Submitted 21 January, 2016;
originally announced January 2016.
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Expansion of a Valley-Polarized Exciton Cloud in a 2D Heterostructure
Authors:
Pasqual Rivera,
Kyle L. Seyler,
Hongyi Yu,
John R. Schaibley,
Jiaqiang Yan,
David G. Mandrus,
Wang Yao,
Xiaodong Xu
Abstract:
Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We create interlayer exciton spin-valley polarization by circularly polarized optical pumping and determine a valle…
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Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We create interlayer exciton spin-valley polarization by circularly polarized optical pumping and determine a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several microns. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work lays a foundation for quantum optoelectronics and valleytronics based on interlayer excitons in van der Waals heterostructures.
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Submitted 11 January, 2016;
originally announced January 2016.
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Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor
Authors:
Kyle L. Seyler,
John R. Schaibley,
Pu Gong,
Pasqual Rivera,
Aaron M. Jones,
Sanfeng Wu,
Jiaqiang Yan,
David G. Mandrus,
Wang Yao,
Xiaodong Xu
Abstract:
Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a…
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Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a spectroscopic tool. Here, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of 4 at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser, arising from the combination of the two-photon and one-photon valley selection rules that have opposite helicity in the monolayer. Our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.
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Submitted 20 April, 2015;
originally announced April 2015.
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Parity violating effects in an exotic perturbation of the rigid rotator
Authors:
A. Pallares Rivera,
M. Kirchbach
Abstract:
The perturbation of the free rigid rotator by the trigonometric Scarf potential is shown to conserve its energy excitation patterns and change only the wave functions towards spherical harmonics rescaled by a function of an unspecified parity, or mixtures of such rescaled harmonics of equal magnetic quantum numbers and different angular momenta. In effect, no parity can be assigned to the states o…
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The perturbation of the free rigid rotator by the trigonometric Scarf potential is shown to conserve its energy excitation patterns and change only the wave functions towards spherical harmonics rescaled by a function of an unspecified parity, or mixtures of such rescaled harmonics of equal magnetic quantum numbers and different angular momenta. In effect, no parity can be assigned to the states of the rotational bands emerging in this exotic way, and the electric dipole operator is allowed to acquire non-vanishing expectation values.
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Submitted 9 March, 2015;
originally announced March 2015.
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Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth
Authors:
John R. Schaibley,
Todd Karin,
Hongyi Yu,
Jason S. Ross,
Pasqual Rivera,
Aaron M. Jones,
Marie E. Scott,
Jiaqiang Yan,
D. G. Mandrus,
Wang Yao,
Kai-Mei Fu,
Xiaodong Xu
Abstract:
Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly na…
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Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 μeV and <0.2 μeV at low-temperature. These linewidths are more than three orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on timescales longer than 1 ns. The ultra-narrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.
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Submitted 25 February, 2015;
originally announced February 2015.
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Bikei Invariants and Gauss Diagrams for Virtual Knotted Surfaces
Authors:
Sam Nelson,
Patricia Rivera
Abstract:
Marked vertex diagrams provide a combinatorial way to represent knotted surfaces in $\mathbb{R}^4$; including virtual crossings allows for a theory of virtual knotted surfaces and virtual cobordisms. Biquandle counting invariants are defined only for marked vertex diagrams representing knotted orientable surfaces; we extend these invariants to all virtual marked vertex diagrams by considering colo…
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Marked vertex diagrams provide a combinatorial way to represent knotted surfaces in $\mathbb{R}^4$; including virtual crossings allows for a theory of virtual knotted surfaces and virtual cobordisms. Biquandle counting invariants are defined only for marked vertex diagrams representing knotted orientable surfaces; we extend these invariants to all virtual marked vertex diagrams by considering colorings by involutory biquandles, also known as bikei. We introduce a way of representing marked vertex diagrams with Gauss diagrams and use these to characterize orientability.
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Submitted 4 June, 2015; v1 submitted 26 September, 2014;
originally announced September 2014.
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Lateral heterojunctions within monolayer semiconductors
Authors:
Chunming Huang,
Sanfeng Wu,
Ana M. Sanchez,
Jonathan J. P. Peters,
Richard Beanland,
Jason S. Ross,
Pasqual Rivera,
Wang Yao,
David H. Cobden,
Xiaodong Xu
Abstract:
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we d…
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Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.
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Submitted 12 June, 2014;
originally announced June 2014.
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Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
Authors:
Pasqual Rivera,
John R. Schaibley,
Aaron M. Jones,
Jason S. Ross,
Sanfeng Wu,
Grant Aivazian,
Philip Klement,
Nirmal J. Ghimire,
Jiaqiang Yan,
D. G. Mandrus,
Wang Yao,
Xiaodong Xu
Abstract:
Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be…
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Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons13-16. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.
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Submitted 19 March, 2014;
originally announced March 2014.
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The random subgraph model for the analysis of an ecclesiastical network in Merovingian Gaul
Authors:
Yacine Jernite,
Pierre Latouche,
Charles Bouveyron,
Patrick Rivera,
Laurent Jegou,
Stéphane Lamassé
Abstract:
In the last two decades many random graph models have been proposed to extract knowledge from networks. Most of them look for communities or, more generally, clusters of vertices with homogeneous connection profiles. While the first models focused on networks with binary edges only, extensions now allow to deal with valued networks. Recently, new models were also introduced in order to characteriz…
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In the last two decades many random graph models have been proposed to extract knowledge from networks. Most of them look for communities or, more generally, clusters of vertices with homogeneous connection profiles. While the first models focused on networks with binary edges only, extensions now allow to deal with valued networks. Recently, new models were also introduced in order to characterize connection patterns in networks through mixed memberships. This work was motivated by the need of analyzing a historical network where a partition of the vertices is given and where edges are typed. A known partition is seen as a decomposition of a network into subgraphs that we propose to model using a stochastic model with unknown latent clusters. Each subgraph has its own mixing vector and sees its vertices associated to the clusters. The vertices then connect with a probability depending on the subgraphs only, while the types of edges are assumed to be sampled from the latent clusters. A variational Bayes expectation-maximization algorithm is proposed for inference as well as a model selection criterion for the estimation of the cluster number. Experiments are carried out on simulated data to assess the approach. The proposed methodology is then applied to an ecclesiastical network in Merovingian Gaul. An R code, called Rambo, implementing the inference algorithm is available from the authors upon request.
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Submitted 5 May, 2014; v1 submitted 21 December, 2012;
originally announced December 2012.
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Symmetry and degeneracy of the curved Coulomb potential on the S3 ball
Authors:
Adrian Pallares Rivera,
Mariana Kirchbach
Abstract:
The "curved" Coulomb potential on the S3 ball, whose isometry group is SO(4), takes the form of a cotangent function, and when added to the four-dimensional squared angular momentum operator, one of the so(4) Casimir invariants, a Hamiltonian is obtained which describes a perturbance of the free geodesic motion that results peculiar in several aspects. The spectrum of such a motion has been studie…
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The "curved" Coulomb potential on the S3 ball, whose isometry group is SO(4), takes the form of a cotangent function, and when added to the four-dimensional squared angular momentum operator, one of the so(4) Casimir invariants, a Hamiltonian is obtained which describes a perturbance of the free geodesic motion that results peculiar in several aspects. The spectrum of such a motion has been studied on various occasions and is known to carry unexpectedly so(4) degeneracy patterns despite the non-commutativity of the perturbance with the Casimir operator. We here suggest an explanation for this behavior in designing a set of operators which close the so(4) algebra and whose Casimir invariant coincides with the Hamiltonian of the perturbed motion at the level of the eigenvalue problem. The above operators are related to the canonical geometric SO(4) generators on S3 by a non-unitary similarity transformation of the scaling type. In this fashion, we identify a complementary option to the deformed dynamical so(4) Higgs algebra constructed in terms of the components of the ordinary angular momentum and a related Runge-Lenz vector.
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Submitted 9 February, 2012;
originally announced February 2012.
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Quasi-energy spectra of graphene dots under intense ac field: field anisotropy and photon dressed quantum rings
Authors:
P. H. Rivera,
A. L. C. Pereira,
P. A. Schulz
Abstract:
A graphene quantum dot under intense ac field and static low magnetic field is investigated. From a tight-binding perspective, applying a Fourier-Floquet transformation and renormalization process, we observe that graphene -intrinsically anisotropic- reveals field polarization signatures in the quasi-density of states. For the ac field polarized along the armchair direction, the dressed electron…
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A graphene quantum dot under intense ac field and static low magnetic field is investigated. From a tight-binding perspective, applying a Fourier-Floquet transformation and renormalization process, we observe that graphene -intrinsically anisotropic- reveals field polarization signatures in the quasi-density of states. For the ac field polarized along the armchair direction, the dressed electronic structure shows an emergent property: an ac field induced quantum ring. This is inferred by the orientation-dependent formation of a miniband of energy states periodically modulated with increasing magnetic field, exactly analogous to the behavior of a quantum ring spectrum.
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Submitted 19 March, 2009;
originally announced March 2009.
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Radiation induced zero-resistance states: a dressed electronic structure effect
Authors:
P. H. Rivera,
P. A. Schulz
Abstract:
Recent results on magnetoresistance in a two dimensional electron gas under crossed magnetic and microwave fields show a new class of oscillations, suggesting a new kind of zero-resistance states. A complete understanding of the effect is still lacking. We consider the problem from the point of view of the electronic structure dressed by photons due to a in plane linearly polarized ac field. The…
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Recent results on magnetoresistance in a two dimensional electron gas under crossed magnetic and microwave fields show a new class of oscillations, suggesting a new kind of zero-resistance states. A complete understanding of the effect is still lacking. We consider the problem from the point of view of the electronic structure dressed by photons due to a in plane linearly polarized ac field. The dramatic changes in the dressed electronic structure lead to a interpretation of the new magnetoresistance oscillations as a persistent-current like effect, induced by the radiation field.
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Submitted 15 May, 2003; v1 submitted 1 May, 2003;
originally announced May 2003.
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Non-perturbative electron dynamics in crossed fields
Authors:
J. M. Villas-Boas,
Wei Zhang,
Sergio E. Ulloa,
P. H. Rivera,
Nelson Studart
Abstract:
Intense AC electric fields on semiconductor structures have been studied in photon-assisted tunneling experiments with magnetic field applied either parallel (B_par) or perpendicular (B_per) to the interfaces. We examine here the electron dynamics in a double quantum well when intense AC electric fields F, and tilted magnetic fields are applied simultaneously. The problem is treated non-perturba…
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Intense AC electric fields on semiconductor structures have been studied in photon-assisted tunneling experiments with magnetic field applied either parallel (B_par) or perpendicular (B_per) to the interfaces. We examine here the electron dynamics in a double quantum well when intense AC electric fields F, and tilted magnetic fields are applied simultaneously. The problem is treated non-perturbatively by a time-dependent Hamiltonian in the effective mass approximation, and using a Floquet-Fourier formalism. For B_par=0, the quasi-energy spectra show two types of crossings: those related to different Landau levels, and those associated to dynamic localization (DL), where the electron is confined to one of the wells, despite the non-negligible tunneling between wells. B_par couples parallel and in-plane motions producing anti-crossings in the spectrum. However, since our approach is non-perturbative, we are able to explore the entire frequency range. For high frequencies, we reproduce the well known results of perfect DL given by zeroes of a Bessel function. We find also that the system exhibits DL at the same values of the field F, even as B_par non-zero, suggesting a hidden dynamical symmetry in the system which we identify with different parity operations. The return times for the electron at various values of field exhibit interesting and complex behavior which is also studied in detail. We find that smaller frequencies shifts the DL points to lower field F, and more importantly, yields poorer localization by the field. We analyze the explicit time evolution of the system, monitoring the elapsed time to return to a given well for each Landau level, and find non-monotonic behavior for decreasing frequencies.
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Submitted 25 March, 2002;
originally announced March 2002.
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Renormalization approach for quantum-dot structures under strong alternating fields
Authors:
P. A. Schulz,
P. H. Rivera,
Nelson Studart
Abstract:
We develop a renormalization method for calculating the electronic structure of single and double quantum dots under intense ac fields. The nanostructures are emulated by lattice models with a clear continuum limit of the effective-mass and single-particle approximations. The coupling to the ac field is treated non-perturbatively by means of the Floquet Hamiltonian. The renormalization approach…
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We develop a renormalization method for calculating the electronic structure of single and double quantum dots under intense ac fields. The nanostructures are emulated by lattice models with a clear continuum limit of the effective-mass and single-particle approximations. The coupling to the ac field is treated non-perturbatively by means of the Floquet Hamiltonian. The renormalization approach allows the study of dressed states of the nanoscopic system with realistic geometries as well arbitrary strong ac fields. We give examples of a single quantum dot, emphasizing the analysis of the effective-mass limit for lattice models, and double-dot structures, where we discuss the limit of the well used two-level approximation.
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Submitted 20 October, 2001;
originally announced October 2001.
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Intense AC field driven superlattices with barrier width dimerization
Authors:
P. H. Rivera,
N. Studart,
P. A. Schulz
Abstract:
The evolution of two coupled mini-bands, generated by alternating barrier widths dimerization of a superlattice, driven by intense AC fields is investigated. The present model delivers a useful framework for the transition between the analytical high frequency regime and the extreme low frequency limit described by models based on Fukuyama's {\it et al.} (Phys. Rev. B {\bf 8}, 5579 (1973)) propo…
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The evolution of two coupled mini-bands, generated by alternating barrier widths dimerization of a superlattice, driven by intense AC fields is investigated. The present model delivers a useful framework for the transition between the analytical high frequency regime and the extreme low frequency limit described by models based on Fukuyama's {\it et al.} (Phys. Rev. B {\bf 8}, 5579 (1973)) proposal.
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Submitted 2 September, 1999;
originally announced September 1999.
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Tuning of dynamic localization in coupled minibands: signatures of a field induced insulator-metal transition
Authors:
P. H. Rivera,
P. A. Schulz
Abstract:
We follow the evolution of dressed coupled mini-bands as a function of an AC field intensity, non perturbatively, for a wide field frequency range. High and low frequency limits are characterized by two different dynamic localization regimes, clearly separated by a breakdown region in a quasi-energy map. Signatures of a insulator-metal like transition by means of a field induced suppression of a…
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We follow the evolution of dressed coupled mini-bands as a function of an AC field intensity, non perturbatively, for a wide field frequency range. High and low frequency limits are characterized by two different dynamic localization regimes, clearly separated by a breakdown region in a quasi-energy map. Signatures of a insulator-metal like transition by means of a field induced suppression of a Peierls-like instability are identified.
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Submitted 2 September, 1999; v1 submitted 2 August, 1999;
originally announced August 1999.