Showing 1–2 of 2 results for author: Ribeiro, A S L
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Magnetocapacitance oscillations dominated by giant Rashba spin orbit interaction in InAs/GaSb quantum wells separated by AlSb barrier
Authors:
A. S. L. Ribeiro,
R. Schott,
C. Reichl,
W. Dietsche,
W. Wegscheider
Abstract:
We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a $20$\,nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane oscillatory response in capacitance representing the density of states of this system. We were able to tune the charge carrier densities by applying a DC bias voltage,…
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We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a $20$\,nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane oscillatory response in capacitance representing the density of states of this system. We were able to tune the charge carrier densities by applying a DC bias voltage, identifying the formation of beating signatures for forward bias. The coexistence of two distinguishable two dimensional charge carrier systems of unequal densities was verified. The corresponding Landau phase diagram presents distinct features originating from the two observed densities. A giant Rashba coefficient ranging from $430-612$\,meV$\textÅ$ and large \textit{g}-factor value underlines the influence of spin orbit interaction.
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Submitted 25 April, 2024;
originally announced April 2024.
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Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems
Authors:
M. Luengo-Kovac,
F. C. D. Moraes,
G. J. Ferreira,
A. S. L. Ribeiro,
G. M. Gusev,
A. K. Bakarov,
V. Sih,
F. G. G. Hernandez
Abstract:
Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the syste…
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Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data shows large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.
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Submitted 18 May, 2017; v1 submitted 24 March, 2017;
originally announced March 2017.
