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Two-Fold Anisotropic Superconductivity in Bilayer T$_d$-MoTe$_2$
Authors:
Zizhong Li,
Apoorv Jindal,
Alex Strasser,
Yangchen He,
Wenkai Zheng,
David Graf,
Takashi Taniguchi,
Kenji Watanabe,
Luis Balicas,
Cory R. Dean,
Xiaofeng Qian,
Abhay N. Pasupathy,
Daniel A. Rhodes
Abstract:
Noncentrosymmetric 2D superconductors with large spin-orbit coupling offer an opportunity to explore superconducting behaviors far beyond the Pauli limit. One such superconductor, few-layer T$_d$-MoTe$_2$, has large upper critical fields that can exceed the Pauli limit by up to 600%. However, the mechanisms governing this enhancement are still under debate, with theory pointing towards either spin…
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Noncentrosymmetric 2D superconductors with large spin-orbit coupling offer an opportunity to explore superconducting behaviors far beyond the Pauli limit. One such superconductor, few-layer T$_d$-MoTe$_2$, has large upper critical fields that can exceed the Pauli limit by up to 600%. However, the mechanisms governing this enhancement are still under debate, with theory pointing towards either spin-orbit parity coupling or tilted Ising spin-orbit coupling. Moreover, ferroelectricity concomitant with superconductivity has been recently observed in the bilayer, where strong changes to superconductivity can be observed throughout the ferroelectric transition pathway. Here, we report the superconducting behavior of bilayer T$_d$-MoTe$ _2$ under an in-plane magnetic field, while systematically varying magnetic field angle and out-of-plane electric field strength. We find that superconductivity in bilayer MoTe$_2$ exhibits a two-fold symmetry with an upper critical field maxima occurring along the b-axis and minima along the a-axis. The two-fold rotational symmetry remains robust throughout the entire superconducting region and ferroelectric hysteresis loop. Our experimental observations of the spin-orbit coupling strength (up to 16.4 meV) agree with the spin texture and spin splitting from first-principles calculations, indicating that tilted Ising spin-orbit coupling is the dominant underlying mechanism.
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Submitted 14 September, 2024;
originally announced September 2024.
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Gate-Tunable Multi-Band van der Waals Photodetector and Polarization Sensor
Authors:
Daozhi Shen,
HeeBong Yang,
Tarun Patel,
Daniel A. Rhodes,
Thomas Timusk,
Y. Norman Zhou,
Na Young Kim,
Adam W. Tsen
Abstract:
A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the combination of multiple material systems with different structures, bandgaps, and photoelectrical responses, which is extremely difficult to engineer using traditio…
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A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the combination of multiple material systems with different structures, bandgaps, and photoelectrical responses, which is extremely difficult to engineer using traditional epitaxial films. Here, we develop a multi-functional and high-performance photosensor using all van der Waals materials. The device features a gate-tunable spectral response that is switchable between near-infrared/visible and short-/mid-wave infrared, as well as broadband operation, at room temperature. The linear polarization sensitivity in the telecommunications O-band can also be directly modulated between horizontal, vertical, and nonpolarizing modes. These effects originate from the balance of photocurrent generation in two of the active layers that can be manipulated by an electric field. The photodetector features high detectivity (>109 cmHz1/2W-1) together with fast operation speed (~ 1 MHz) and can be further exploited for dual visible and infrared imaging.
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Submitted 28 May, 2024;
originally announced May 2024.
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Stoner instabilities and Ising excitonic states in twisted transition metal dichalcogenides
Authors:
Augusto Ghiotto,
LingNan Wei,
Larry Song,
Jiawei Zang,
Aya Batoul Tazi,
Daniel Ostrom,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Daniel A. Rhodes,
Andrew J. Millis,
Cory R. Dean,
Lei Wang,
Abhay N. Pasupathy
Abstract:
Moiré transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moiré superlattice, and it is believed that lattice commensurability plays a key role in their stability. In this work, we show via magnetotransport measurements on twisted WSe2 that new correlated ele…
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Moiré transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moiré superlattice, and it is believed that lattice commensurability plays a key role in their stability. In this work, we show via magnetotransport measurements on twisted WSe2 that new correlated electronic phases can exist away from commensurability. The first phase is an antiferromagnetic metal that is driven by proximity to the van Hove singularity. The second is a re-entrant magnetic field-driven insulator. This insulator is formed from a small and equal density of electrons and holes with opposite spin projections - an Ising excitonic insulator.
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Submitted 27 May, 2024;
originally announced May 2024.
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Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$
Authors:
Andrew Y. Joe,
Kateryna Pistunova,
Kristen Kaasbjerg,
Ke Wang,
Bumho Kim,
Daniel A. Rhodes,
Takashi Taniguchi,
Kenji Watanabe,
James Hone,
Tony Low,
Luis A. Jauregui,
Philip Kim
Abstract:
Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can b…
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Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path ($>$500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.
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Submitted 10 October, 2023; v1 submitted 6 October, 2023;
originally announced October 2023.
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Programmable Nanowrinkle-Induced Room-Temperature Exciton Localization in Monolayer WSe2
Authors:
Emanuil S. Yanev,
Thomas P. Darlington,
Sophia A. Ladyzhets,
Matthew C. Strasbourg,
Song Liu,
Daniel A. Rhodes,
Kobi Hall,
Aditya Sinha,
Nicholas J. Borys,
James C. Hone,
P. James Schuck
Abstract:
Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theor…
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Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced super-wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. Detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from these fine wrinkles, and show that the states can be tightly confined to regions < 10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.
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Submitted 24 May, 2023;
originally announced May 2023.
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Coupled Ferroelectricity and Superconductivity in Bilayer $T_d$-MoTe$_2$
Authors:
Apoorv Jindal,
Amartyajyoti Saha,
Zizhong Li,
Takashi Taniguchi,
Kenji Watanabe,
James C. Hone,
Turan Birol,
Rafael M. Fernandes,
Cory R. Dean,
Abhay N. Pasupathy,
Daniel A. Rhodes
Abstract:
Achieving electrostatic control of quantum phases is at the frontier of condensed matter research. Recent investigations have revealed superconductivity tunable by electrostatic doping in twisted graphene heterostructures and in two-dimensional (2D) semimetals such as WTe$_2$. Some of these systems have a polar crystal structure that gives rise to ferroelectricity, in which the interlayer polariza…
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Achieving electrostatic control of quantum phases is at the frontier of condensed matter research. Recent investigations have revealed superconductivity tunable by electrostatic doping in twisted graphene heterostructures and in two-dimensional (2D) semimetals such as WTe$_2$. Some of these systems have a polar crystal structure that gives rise to ferroelectricity, in which the interlayer polarization exhibits bistability driven by external electric fields. Here we show that bilayer $T_d$-MoTe$_2$ simultaneously exhibits ferroelectric switching and superconductivity. Remarkably, a field-driven, first-order superconductor-to-normal transition is observed at its ferroelectric transition. Bilayer $T_d$-MoTe$_2$ also has a maximum in its superconducting transition temperature ($T_\textrm{c}$) as a function of carrier density and temperature, allowing independent control of the superconducting state as a function of both doping and polarization. We find that the maximum $T_\textrm{c}$ is concomitant with compensated electron and hole carrier densities and vanishes when one of the Fermi pockets disappears with doping. We argue that this unusual polarization-sensitive 2D superconductor is driven by an interband pairing interaction associated with nearly nested electron and hole Fermi pockets.
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Submitted 11 April, 2023;
originally announced April 2023.
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Two-step flux synthesis of ultrapure transition metal dichalcogenides
Authors:
Song Liu,
Yang Liu,
Luke Nemetz Holtzman,
Baichang Li,
Madisen Holbrook,
Jordan Pack,
Takashi Taniguchi,
Kenji Watanabe,
Cory R. Dean,
Abhay Pasupathy,
Katayun Barmak,
Daniel A. Rhodes,
James Hone
Abstract:
Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements…
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Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements of monolayer WSe2 yield room-temperature hole mobility above 840 cm2/Vs and low-temperature disorder-limited mobility above 44,000 cm2/Vs. Electrical transport measurements of graphene-WSe2 heterostructures fabricated from the two-step flux grown WSe2 also show superior performance: higher graphene mobility, lower charged impurity density, and well-resolved integer quantum Hall states.
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Submitted 28 March, 2023;
originally announced March 2023.
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High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature
Authors:
Daozhi Shen,
HeeBong Yang,
Christian Spudat,
Tarun Patel,
Shazhou Zhong,
Fangchu Chen,
Jian Yan,
Xuan Luo,
Meixin Cheng,
German Sciaini,
Yuping Sun,
Daniel A. Rhodes,
Thomas Timusk,
Y. Norman Zhou,
Na Young Kim,
Adam W. Tsen
Abstract:
The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve this goal. We bypass this challenge by demonstrating an extremely broadband photodetector based on a two-dimensional (2D) van der Waals heterostructure that is s…
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The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve this goal. We bypass this challenge by demonstrating an extremely broadband photodetector based on a two-dimensional (2D) van der Waals heterostructure that is sensitive to light across over a decade in energy from the mid-infrared (MIR) to deep-ultraviolet (DUV) at room temperature. The devices feature high detectivity (> 10^9 cm Hz^1/2 W^-1) together with high bandwidth (2.1 MHz). The active area can be further miniaturized to submicron dimensions, far below the diffraction limit for the longest detectable wavelength of 4.1 um, enabling such devices for facile measurements of local optical properties on atomic-layer-thickness samples placed in close proximity. This work can lead to the development of low-cost and high-throughput photosensors for hyperspectral imaging at the nanoscale.
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Submitted 25 February, 2022; v1 submitted 31 January, 2022;
originally announced February 2022.
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Evidence of high-temperature exciton condensation in 2D atomic double layers
Authors:
Zefang Wang,
Daniel A. Rhodes,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Jie Shan,
Kin Fai Mak
Abstract:
A Bose-Einstein condensate is the ground state of a dilute gas of bosons, such as atoms cooled to temperatures close to absolute zero. With much smaller mass, excitons (bound electron-hole pairs) are expected to condense at significantly higher temperatures. Here we study electrically generated interlayer excitons in MoSe2/WSe2 atomic double layers with density up to 10^12 cm-2. The interlayer tun…
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A Bose-Einstein condensate is the ground state of a dilute gas of bosons, such as atoms cooled to temperatures close to absolute zero. With much smaller mass, excitons (bound electron-hole pairs) are expected to condense at significantly higher temperatures. Here we study electrically generated interlayer excitons in MoSe2/WSe2 atomic double layers with density up to 10^12 cm-2. The interlayer tunneling current depends only on exciton density, indicative of correlated electron-hole pair tunneling. Strong electroluminescence (EL) arises when a hole tunnels from WSe2 to recombine with electron in MoSe2. We observe a critical threshold dependence of the EL intensity on exciton density, accompanied by a super-Poissonian photon statistics near threshold, and a large EL enhancement peaked narrowly at equal electron-hole densities. The phenomenon persists above 100 K, which is consistent with the predicted critical condensation temperature. Our study provides compelling evidence for interlayer exciton condensation in two-dimensional atomic double layers and opens up exciting opportunities for exploring condensate-based optoelectronics and exciton-mediated high-temperature superconductivity.
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Submitted 29 March, 2021;
originally announced March 2021.
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Tunable exciton-optomechanical coupling in suspended monolayer MoSe2
Authors:
Hongchao Xie,
Shengwei Jiang,
Daniel A. Rhodes,
James C. Hone,
Jie Shan,
Kin Fai Mak
Abstract:
The strong excitonic effect in monolayer transition metal dichalcogenide (TMD) semiconductors has enabled many fascinating light-matter interaction phenomena. Examples include strongly coupled exciton-polaritons and nearly perfect atomic monolayer mirrors. The strong light-matter interaction also opens the door for dynamical control of mechanical motion through the exciton resonance of monolayer T…
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The strong excitonic effect in monolayer transition metal dichalcogenide (TMD) semiconductors has enabled many fascinating light-matter interaction phenomena. Examples include strongly coupled exciton-polaritons and nearly perfect atomic monolayer mirrors. The strong light-matter interaction also opens the door for dynamical control of mechanical motion through the exciton resonance of monolayer TMDs. Here we report the observation of exciton-optomechanical coupling in a suspended monolayer MoSe2 mechanical resonator. By moderate optical pumping near the MoSe2 exciton resonance, we have observed optical damping and anti-damping of mechanical vibrations as well as the optical spring effect. The exciton-optomechanical coupling strength is also gate-tunable. Our observations can be understood in a model based on photothermal backaction and gate-induced mirror symmetry breaking in the device structure. The observation of gate-tunable exciton-optomechanical coupling in a monolayer semiconductor may find applications in nanoelectromechanical systems (NEMS) and in exciton-optomechanics.
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Submitted 11 April, 2021; v1 submitted 17 March, 2021;
originally announced March 2021.
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Quantum Criticality in Twisted Transition Metal Dichalcogenides
Authors:
Augusto Ghiotto,
En-Min Shih,
Giancarlo S. S. G. Pereira,
Daniel A. Rhodes,
Bumho Kim,
Jiawei Zang,
Andrew J. Millis,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Lei Wang,
Cory R. Dean,
Abhay N. Pasupathy
Abstract:
In moiré heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic phase in twisted WSe$_2$ near half filling of the first moiré subband. We find that the metal-insulator transition as a function of both density and displacement fi…
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In moiré heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic phase in twisted WSe$_2$ near half filling of the first moiré subband. We find that the metal-insulator transition as a function of both density and displacement field is continuous. At the metal-insulator boundary, the resistivity displays strange metal behaviour at low temperature with dissipation comparable to the Planckian limit. Further into the metallic phase, Fermi-liquid behaviour is recovered at low temperature which evolves into a quantum critical fan at intermediate temperatures before eventually reaching an anomalous saturated regime near room temperature. An analysis of the residual resistivity indicates the presence of strong quantum fluctuations in the insulating phase. These results establish twisted WSe$_2$ as a new platform to study doping and bandwidth controlled metal-insulator quantum phase transitions on the triangular lattice.
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Submitted 23 March, 2021; v1 submitted 17 March, 2021;
originally announced March 2021.
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Intrinsic Donor-Bound Excitons in Ultraclean Monolayer Semiconductors
Authors:
Pasqual Rivera,
Minhao He,
Bumho Kim,
Song Liu,
Carmen Rubio-Verdú,
Hyowon Moon,
Lukas Mennel,
Daniel A. Rhodes,
Hongyi Yu,
Takashi Taniguchi,
Kenji Watanabe,
Jiaqiang Yan,
David G. Mandrus,
Hanan Dery,
Abhay Pasupathy,
Dirk Englund,
James Hone,
Wang Yao,
Xiaodong Xu
Abstract:
The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy sepa…
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The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (> 6 $μ$s) and polarization lifetimes (> 100 ns). Resonant excitation of the free inter- and intra-valley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellites photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.
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Submitted 12 January, 2021;
originally announced January 2021.
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Highly Confined In-plane Exciton-Polaritons in Monolayer Semiconductors
Authors:
Itai Epstein,
Andre J. Chaves,
Daniel A. Rhodes,
Bettina Frank,
Kenji Watanabe,
Takashi Taniguchi,
Harald Giessen,
James C. Hone,
Nuno M. R. Peres,
Frank H. L. Koppens
Abstract:
2D materials support unique excitations of quasi-particles that consist of a material excitation and photons called polaritons. Especially interesting are in-plane propagating polaritons which can be confined to a single monolayer and carry large momentum. In this work, we report the existence of a new type of in-plane propagating polariton, supported on monolayer transition-metal-dicalcogonide (T…
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2D materials support unique excitations of quasi-particles that consist of a material excitation and photons called polaritons. Especially interesting are in-plane propagating polaritons which can be confined to a single monolayer and carry large momentum. In this work, we report the existence of a new type of in-plane propagating polariton, supported on monolayer transition-metal-dicalcogonide (TMD) in the visible spectrum, which has not yet been observed. This 2D in-plane exciton-polariton (2DEP) is described by the coupling of an electromagnetic light field with the collective oscillations of the excitons supported by monolayer TMDs. We expose the specific experimental conditions required for the excitation of the 2DEP and show that these can be created if the TMD is encapsulated with hexagonal-boron-nitride (hBN) and cooled to cryogenic temperatures. In addition, we compare the properties of the 2DEPs with those of surface-plasmons-polaritons (SPPs) at the same spectral range, and find that the 2DEP exhibit over two orders-of-magnitude larger wavelength confinement. Finally, we propose two configurations for the possible experimental observation of 2DEPs.
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Submitted 20 October, 2020;
originally announced October 2020.
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Abundance of correlated insulating states at fractional fillings of WSe$_{2}$/WS$_{2}$ moiré superlattices
Authors:
Yang Xu,
Song Liu,
Daniel A Rhodes,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Veit Elser,
Kin Fai Mak,
Jie Shan
Abstract:
Quantum particles on a lattice with competing long-range interactions are ubiquitous in physics. Transition metal oxides, layered molecular crystals and trapped ion arrays are a few examples out of many. In the strongly interacting regime, these systems often exhibit a rich variety of quantum many-body ground states that challenge theory. The emergence of transition metal dichalcogenide moiré hete…
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Quantum particles on a lattice with competing long-range interactions are ubiquitous in physics. Transition metal oxides, layered molecular crystals and trapped ion arrays are a few examples out of many. In the strongly interacting regime, these systems often exhibit a rich variety of quantum many-body ground states that challenge theory. The emergence of transition metal dichalcogenide moiré heterostructures provides a highly controllable platform to study long-range electronic correlations. Here we report an observation of nearly two-dozen correlated insulating states at fractional fillings of a WSe$_{2}$/WS$_{2}$ moiré heterostructure. The discovery is enabled by a new optical sensing technique that is built on the sensitivity to dielectric environment of the exciton excited states in single-layer semiconductor WSe$_{2}$. The cascade of insulating states exhibits an energy ordering which is nearly symmetric about filling factor of half electron (or hole) per superlattice site. We propose a series of charge-ordered states at commensurate filling fractions that range from generalized Wigner crystals to charge density waves. Our study lays the groundwork for utilizing moiré superlattices to simulate a wealth of quantum many-body problems that are described by the two-dimensional t-V model or spin models with long-range charge-charge and exchange interactions.
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Submitted 21 July, 2020;
originally announced July 2020.
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Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature
Authors:
Thomas P. Darlington,
Christian Carmesin,
Matthias Florian,
Emanuil Yanev,
Obafunso Ajayi,
Jenny Ardelean,
Daniel A. Rhodes,
Augusto Ghiotto,
Andrey Krayev,
K. Watanabe,
T. Taniguchi,
Jeffrey W. Kysar,
Abhay N. Pasupathy,
James C. Hone,
Frank Jahnke,
Nicholas J. Borys,
P. James Schuck
Abstract:
In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poor…
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In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopy of excitons in nanobubbles of localized strain in monolayer WSe2 with atomistic structural models to elucidate how strain induces nanoscale confinement potentials that give rise to highly localized exciton states in 2D semiconductors. Nano-optical imaging of nanobubbles in low-defect monolayers reveal localized excitons on length scales of approximately 10 nm at multiple sites along the periphery of individual nanobubbles, which is in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials that are atomistically derived from measured topographies of existing nanobubbles. Our results provide one-of-a-kind experimental and theoretical insight of how strain-induced confinement - without crystalline defects - can efficiently localize excitons on length scales commensurate with exciton size, providing key nanoscale structure-property information for quantum emitter phenomena in monolayer WSe2.
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Submitted 3 March, 2020;
originally announced March 2020.
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Diffusivity Reveals Three Distinct Phases of Interlayer Excitons in MoSe2/WSe2 Heterobilayers
Authors:
Jue Wang,
Qianhui Shi,
En-Min Shih,
Lin Zhou,
Wenjing Wu,
Yusong Bai,
Daniel A. Rhodes,
Katayun Barmak,
James Hone,
Cory R. Dean,
X. -Y. Zhu
Abstract:
Charge separated interlayer excitons in transition metal dichalcogenide (TMDC) heterobilayers are being explored for moiré exciton lattices and exciton condensates. The presence of permanent dipole moments and the poorly screened Coulomb interaction make many body interactions particularly strong for interlayer excitons. Here we reveal two distinct phase transitions for interlayer excitons in the…
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Charge separated interlayer excitons in transition metal dichalcogenide (TMDC) heterobilayers are being explored for moiré exciton lattices and exciton condensates. The presence of permanent dipole moments and the poorly screened Coulomb interaction make many body interactions particularly strong for interlayer excitons. Here we reveal two distinct phase transitions for interlayer excitons in the MoSe2/WSe2 heterobilayer using time and spatially resolved photoluminescence imaging: from trapped excitons in the moiré-potential to the modestly mobile exciton gas as exciton density increases to ne/h ~ 1011 cm-2 and from the exciton gas to the highly mobile charge separated electron/hole plasma for ne/h > 1012 cm-2. The latter is the Mott transition and is confirmed in photoconductivity measurements. These findings set fundamental limits for achieving quantum states of interlayer excitons.
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Submitted 18 September, 2020; v1 submitted 11 January, 2020;
originally announced January 2020.
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Odd- and even-denominator fractional quantum Hall states in monolayer WSe$_2$
Authors:
Qianhui Shi,
En-Min Shih,
Martin V. Gustafsson,
Daniel A. Rhodes,
Bumho Kim,
Kenji Watanabe,
Takashi Taniguchi,
Zlatko Papić,
James Hone,
Cory R. Dean
Abstract:
Monolayer (ML) semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure -- just like graphene -- facilitates gate-tunability, while the sizable band gap and strong spin-orbit coupling hold promise for properties beyond graphene. Measurements under large magnetic fields have revealed an unusual LL struc…
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Monolayer (ML) semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure -- just like graphene -- facilitates gate-tunability, while the sizable band gap and strong spin-orbit coupling hold promise for properties beyond graphene. Measurements under large magnetic fields have revealed an unusual LL structure, distinct from other 2D electron systems. However, owing to limited sample quality and poor electrical contact, probing the lowest Landau levels (LLs) has been challenging, and observation of electron correlations within the fractionally filled LLs regime has not been possible. Here, through bulk electronic compressibility measurements, we investigate the LL structure of ML WSe$_2$ in the extreme quantum limit, and observe fractional quantum Hall (FQH) states in the lowest three LLs. The odd-denominator FQH sequences demonstrate a systematic evolution with the LL orbital index, which has not been observed in any other system but is consistent with generic theoretical expectations. In addition, we observe an even-denominator state in the second LL that is expected to host non-Abelian statistics. Our results suggest that the 2D semiconductors can provide an experimental platform that closely resembles idealized theoretical models in the quantum Hall regime.
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Submitted 15 July, 2020; v1 submitted 11 November, 2019;
originally announced November 2019.
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Magic continuum in twisted bilayer WSe2
Authors:
Lei Wang,
En-Min Shih,
Augusto Ghiotto,
Lede Xian,
Daniel A. Rhodes,
Cheng Tan,
Martin Claassen,
Dante M. Kennes,
Yusong Bai,
Bumho Kim,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoyang Zhu,
James Hone,
Angel Rubio,
Abhay Pasupathy,
Cory R. Dean
Abstract:
Emergent quantum phases driven by electronic interactions can manifest in materials with narrowly dispersing, i.e. "flat", energy bands. Recently, flat bands have been realized in a variety of graphene-based heterostructures using the tuning parameters of twist angle, layer stacking and pressure, and resulting in correlated insulator and superconducting states. Here we report the experimental obse…
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Emergent quantum phases driven by electronic interactions can manifest in materials with narrowly dispersing, i.e. "flat", energy bands. Recently, flat bands have been realized in a variety of graphene-based heterostructures using the tuning parameters of twist angle, layer stacking and pressure, and resulting in correlated insulator and superconducting states. Here we report the experimental observation of similar correlated phenomena in twisted bilayer tungsten diselenide (tWSe2), a semiconducting transition metal dichalcogenide (TMD). Unlike twisted bilayer graphene where the flat band appears only within a narrow range around a "magic angle", we observe correlated states over a continuum of angles, spanning 4 degree to 5.1 degree. A Mott-like insulator appears at half band filling that can be sensitively tuned with displacement field. Hall measurements supported by ab initio calculations suggest that the strength of the insulator is driven by the density of states at half filling, consistent with a 2D Hubbard model in a regime of moderate interactions. At 5.1 degree twist, we observe evidence of superconductivity upon doping away from half filling, reaching zero resistivity around 3 K. Our results establish twisted bilayer TMDs as a model system to study interaction-driven phenomena in flat bands with dynamically tunable interactions.
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Submitted 26 October, 2019;
originally announced October 2019.
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Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor
Authors:
Cheng Tan,
Derek Y. H. Ho,
Lei Wang,
J. I. A. Li,
Indra Yudhistira,
Daniel A. Rhodes,
Takashi Taniguchi,
Kenji Watanabe,
Kenneth Shepard,
Paul L. McEuen,
Cory R. Dean,
Shaffique Adam,
James Hone
Abstract:
Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here we present a combined theoretical and experimental study of ambipolar hydrodynamic transport in bilayer graphene demonstrating that the conductivity is given by the sum of two Drude-like terms that describ…
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Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here we present a combined theoretical and experimental study of ambipolar hydrodynamic transport in bilayer graphene demonstrating that the conductivity is given by the sum of two Drude-like terms that describe relative motion between electrons and holes, and the collective motion of the electron-hole plasma. As predicted, the measured conductivity of gapless, charge-neutral bilayer graphene is sample- and temperature-independent over a wide range. Away from neutrality, the electron-hole conductivity collapses to a single curve, and a set of just four fitting parameters provides quantitative agreement between theory and experiment at all densities, temperatures, and gaps measured. This work validates recent theories for dissipation-enabled hydrodynamic conductivity and creates a link between semiconductor physics and the emerging field of viscous electronics.
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Submitted 17 April, 2022; v1 submitted 28 August, 2019;
originally announced August 2019.
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Near-unity light absorption in a monolayer WS2 van der Waals heterostructure cavity
Authors:
Itai Epstein,
Bernat Terrés,
André J. Chaves,
Varun-Varma Pusapati,
Daniel A. Rhodes,
Bettina Frank,
Valentin Zimmermann,
Ying Qin,
Kenji Watanabe,
Takashi Taniguchi,
Harald Giessen,
Sefaattin Tongay,
James C. Hone,
Nuno M. R. Peres,
Frank Koppens
Abstract:
Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has no…
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Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has not been provided. Here, we introduce a TMD-based van der Waals heterostructure cavity that provides near-unity excitonic absorption, and emission of excitonic complexes that are observed at ultra-low excitation powers. Our results are in full agreement with a quantum theoretical framework introduced to describe the light-exciton-cavity interaction. We find that the subtle interplay between the radiative, non-radiative and dephasing decay rates plays a crucial role, and unveil a universal absorption law for excitons in 2D systems. This enhanced light-exciton interaction provides a platform for studying excitonic phase-transitions and quantum nonlinearities and enables new possibilities for 2D semiconductor-based optoelectronic devices.
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Submitted 9 September, 2019; v1 submitted 20 August, 2019;
originally announced August 2019.
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Magnetism in Semiconducting Molybdenum Dichalcogenides
Authors:
Z. Guguchia,
A. Kerelsky,
D. Edelberg,
S. Banerjee,
F. von Rohr,
D. Scullion,
M. Augustin,
M. Scully,
D. A. Rhodes,
Z. Shermadini,
H. Luetkens,
A. Shengelaya,
C. Baines,
E. Morenzoni,
A. Amato,
J. C. Hone,
R. Khasanov,
S. J. L. Billinge,
E. Santos,
A. N. Pasupathy,
Y. J. Uemura
Abstract:
Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 K and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin-rotation (muSR), scanning tun…
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Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 K and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin-rotation (muSR), scanning tunneling microscopy (STM), as well as density functional theory (DFT) calculations. The muon spin rotation measurements show the presence of a large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites which are randomly distributed in the lattice at the sub-percent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9-2.8 mu_B. Further, we find that the magnetic order stabilized in 2H-MoTe2 and 2H-MoSe2 is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2 and 2H-MoSe2 as a new class of magnetic semiconductors and opens a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.
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Submitted 20 November, 2017; v1 submitted 14 November, 2017;
originally announced November 2017.
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Trion Species-Resolved Quantum Beats in MoSe2
Authors:
Gabriella D. Shepard,
Jenny V. Ardelean,
Daniel A. Rhodes,
X. -Y. Zhu,
James C. Hone,
Stefan Strauf
Abstract:
Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properti…
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Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properties of trion-species directly in the linear optical response. Autocorrelation measurements reveal long dephasing times up to T2=1.16+-0.05 ps for positively charged excitons. Gate dependent measurements provide evidence that the positively-charged trion forms via spatially localized hole states making this trion less prone to dephasing in the presence of elevated hole carrier concentrations. Quantum beat signatures demonstrate coherent coupling between excitons and trions that have a dephasing time up to 0.6 ps, a two-fold increase over those in previous reports. A key merit of the prolonged exciton/trion coherences is that they were achieved in a linear optical experiment, and thus are directly relevant to applications in nanolasers, coherent control, and on-chip quantum information processing requiring long photon coherence.
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Submitted 11 September, 2017;
originally announced September 2017.
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Coexistence of Weyl Physics and Planar Defects in Semimetals TaP and TaAs
Authors:
Tiglet Besara,
Daniel A. Rhodes,
Kuan-Wen Chen,
Suvadip Das,
Qiu R. Zhang,
Jifeng Sun,
Bin Zeng,
Yan Xin,
Luis Balicas,
Ryan E. Baumbach,
Efstratios Manousakis,
David J. Singh,
Theo Siegrist
Abstract:
We report a structural study of the Weyl semimetals TaAs and TaP, utilizing diffraction and imaging techniques, where we show that they contain a high density of defects, leading to non-stoichiometric single crystals of both semimetals. Despite the observed defects and non-stoichiometry on samples grown using techniques already reported in the literature, de Haas-van Alphen measurements on TaP rev…
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We report a structural study of the Weyl semimetals TaAs and TaP, utilizing diffraction and imaging techniques, where we show that they contain a high density of defects, leading to non-stoichiometric single crystals of both semimetals. Despite the observed defects and non-stoichiometry on samples grown using techniques already reported in the literature, de Haas-van Alphen measurements on TaP reveal quantum oscillations and a high carrier mobility, an indication that the crystals are of quality comparable to those reported elsewhere. Electronic structure calculations on TaAs reveal that the position of the Weyl points relative to the Fermi level shift with the introduction of vacancies and stacking faults. In the case of vacancies the Fermi surface becomes considerably altered, while the effect of stacking faults on the electronic structure is to allow the Weyl pockets to remain close to the Fermi surface. The observation of quantum oscillations in a non-stoichiometric crystal and the persistence of Weyl fermion pockets near the Fermi surface in a crystal with stacking faults point to the robustness of these quantum phenomena in these materials.
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Submitted 16 June, 2016;
originally announced June 2016.
