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Humans Social Relationship Classification during Accompaniment
Authors:
Oscar Castro,
Ely Repiso,
Anais Garrell,
Alberto Sanfeliu
Abstract:
This paper presents the design of deep learning architectures which allow to classify the social relationship existing between two people who are walking in a side-by-side formation into four possible categories --colleagues, couple, family or friendship. The models are developed using Neural Networks or Recurrent Neural Networks to achieve the classification and are trained and evaluated using a…
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This paper presents the design of deep learning architectures which allow to classify the social relationship existing between two people who are walking in a side-by-side formation into four possible categories --colleagues, couple, family or friendship. The models are developed using Neural Networks or Recurrent Neural Networks to achieve the classification and are trained and evaluated using a database of readings obtained from humans performing an accompaniment process in an urban environment. The best achieved model accomplishes a relatively good accuracy in the classification problem and its results enhance partially the outcomes from a previous study [1]. Furthermore, the model proposed shows its future potential to improve its efficiency and to be implemented in a real robot.
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Submitted 6 July, 2022;
originally announced July 2022.
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A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy
Authors:
Marta Orrù,
Eva Repiso,
Stefania Carapezzi,
Alex Henning,
Stefano Roddaro,
Alfonso Franciosi,
Yossi Rosenwaks,
Anna Cavallini,
Faustino Martelli,
Silvia Rubini
Abstract:
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 1020 electron/cm3 by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of…
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N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 1020 electron/cm3 by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single-wire field-effect devices. Low-temperature photoluminescence is used to characterize the Te-doped nanowires over several orders of magnitude of the impurity concentration. The combined use of those techniques allows the precise definition of the growth conditions required for effective Te incorporation.
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Submitted 9 April, 2021;
originally announced April 2021.
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Optical properties of metamorphic type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells grown on GaAs for the mid-infrared spectral range
Authors:
Eva Repiso,
Christopher A. Broderick,
Maria de la Mata,
Reza Arkani,
Qi Lu,
Andrew R. J. Marshall,
Sergio I. Molina,
Eoin P. O'Reilly,
Peter J. Carrington,
Anthony Krier
Abstract:
We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $μ$m. Photoluminescence (PL) measurements for QWs…
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We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $μ$m. Photoluminescence (PL) measurements for QWs having Sb compositions up to $x = 10$\% demonstrate strong room temperature emission up to 3.4 $μ$m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8-band $\vec{k} \cdot \vec{p}$ Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure. Our results highlight the potential of type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of mid-infrared light-emitting diodes.
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Submitted 6 November, 2018;
originally announced November 2018.
