Showing 1–50 of 100 results for author: Raghavan, S

Did You Hear That? Introducing AADG: A Framework for Generating Benchmark Data in Audio Anomaly Detection

Authors: Ksheeraja Raghavan, Samiran Gode, Ankit Shah, Surabhi Raghavan, Wolfram Burgard, Bhiksha Raj, Rita Singh

Abstract: We introduce a novel, general-purpose audio generation framework specifically designed for anomaly detection and localization. Unlike existing datasets that predominantly focus on industrial and machine-related sounds, our framework focuses a broader range of environments, particularly useful in real-world scenarios where only audio data are available, such as in video-derived or telephonic audio.… ▽ More We introduce a novel, general-purpose audio generation framework specifically designed for anomaly detection and localization. Unlike existing datasets that predominantly focus on industrial and machine-related sounds, our framework focuses a broader range of environments, particularly useful in real-world scenarios where only audio data are available, such as in video-derived or telephonic audio. To generate such data, we propose a new method inspired by the LLM-Modulo framework, which leverages large language models(LLMs) as world models to simulate such real-world scenarios. This tool is modular allowing a plug-and-play approach. It operates by first using LLMs to predict plausible real-world scenarios. An LLM further extracts the constituent sounds, the order and the way in which these should be merged to create coherent wholes. Much like the LLM-Modulo framework, we include rigorous verification of each output stage, ensuring the reliability of the generated data. The data produced using the framework serves as a benchmark for anomaly detection applications, potentially enhancing the performance of models trained on audio data, particularly in handling out-of-distribution cases. Our contributions thus fill a critical void in audio anomaly detection resources and provide a scalable tool for generating diverse, realistic audio data. △ Less

Submitted 4 October, 2024; originally announced October 2024.

Comments: 9 pages, under review

DANA: Domain-Aware Neurosymbolic Agents for Consistency and Accuracy

Authors: Vinh Luong, Sang Dinh, Shruti Raghavan, William Nguyen, Zooey Nguyen, Quynh Le, Hung Vo, Kentaro Maegaito, Loc Nguyen, Thao Nguyen, Anh Hai Ha, Christopher Nguyen

Abstract: Large Language Models (LLMs) have shown remarkable capabilities, but their inherent probabilistic nature often leads to inconsistency and inaccuracy in complex problem-solving tasks. This paper introduces DANA (Domain-Aware Neurosymbolic Agent), an architecture that addresses these issues by integrating domain-specific knowledge with neurosymbolic approaches. We begin by analyzing current AI archi… ▽ More Large Language Models (LLMs) have shown remarkable capabilities, but their inherent probabilistic nature often leads to inconsistency and inaccuracy in complex problem-solving tasks. This paper introduces DANA (Domain-Aware Neurosymbolic Agent), an architecture that addresses these issues by integrating domain-specific knowledge with neurosymbolic approaches. We begin by analyzing current AI architectures, including AutoGPT, LangChain ReAct and OpenAI's ChatGPT, through a neurosymbolic lens, highlighting how their reliance on probabilistic inference contributes to inconsistent outputs. In response, DANA captures and applies domain expertise in both natural-language and symbolic forms, enabling more deterministic and reliable problem-solving behaviors. We implement a variant of DANA using Hierarchical Task Plans (HTPs) in the open-source OpenSSA framework. This implementation achieves over 90\% accuracy on the FinanceBench financial-analysis benchmark, significantly outperforming current LLM-based systems in both consistency and accuracy. Application of DANA in physical industries such as semiconductor shows that its flexible architecture for incorporating knowledge is effective in mitigating the probabilistic limitations of LLMs and has potential in tackling complex, real-world problems that require reliability and precision. △ Less

Submitted 27 September, 2024; originally announced October 2024.

MetaFood3D: Large 3D Food Object Dataset with Nutrition Values

Authors: Yuhao Chen, Jiangpeng He, Chris Czarnecki, Gautham Vinod, Talha Ibn Mahmud, Siddeshwar Raghavan, Jinge Ma, Dayou Mao, Saeejith Nair, Pengcheng Xi, Alexander Wong, Edward Delp, Fengqing Zhu

Abstract: Food computing is both important and challenging in computer vision (CV). It significantly contributes to the development of CV algorithms due to its frequent presence in datasets across various applications, ranging from classification and instance segmentation to 3D reconstruction. The polymorphic shapes and textures of food, coupled with high variation in forms and vast multimodal information,… ▽ More Food computing is both important and challenging in computer vision (CV). It significantly contributes to the development of CV algorithms due to its frequent presence in datasets across various applications, ranging from classification and instance segmentation to 3D reconstruction. The polymorphic shapes and textures of food, coupled with high variation in forms and vast multimodal information, including language descriptions and nutritional data, make food computing a complex and demanding task for modern CV algorithms. 3D food modeling is a new frontier for addressing food-related problems, due to its inherent capability to deal with random camera views and its straightforward representation for calculating food portion size. However, the primary hurdle in the development of algorithms for food object analysis is the lack of nutrition values in existing 3D datasets. Moreover, in the broader field of 3D research, there is a critical need for domain-specific test datasets. To bridge the gap between general 3D vision and food computing research, we propose MetaFood3D. This dataset consists of 637 meticulously labeled 3D food objects across 108 categories, featuring detailed nutrition information, weight, and food codes linked to a comprehensive nutrition database. The dataset emphasizes intra-class diversity and includes rich modalities such as textured mesh files, RGB-D videos, and segmentation masks. Experimental results demonstrate our dataset's significant potential for improving algorithm performance, highlight the challenging gap between video captures and 3D scanned data, and show the strength of the MetaFood3D dataset in high-quality data generation, simulation, and augmentation. △ Less

Submitted 3 September, 2024; originally announced September 2024.

Comments: Dataset is coming soon

Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure

Authors: Asraful Haque, Suman Kumar Mandal, Shubham Kumar Parate, Harshal Jason Dsouza, Sakshi Chandola, Pavan Nukala, Srinivasan Raghavan

Abstract: Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene. The resulting film can be exfoliated to form a freestanding membrane, and the substrate, if expensive, can be reused. However, atomically thin 2-D m… ▽ More Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene. The resulting film can be exfoliated to form a freestanding membrane, and the substrate, if expensive, can be reused. However, atomically thin 2-D materials are susceptible to damage before and during film growth in the chamber, leading to a poor epitaxy. Oxide remote epitaxy using graphene, the most commonly available 2D material, is particularly challenging because the conventional conditions employed for the growth of epitaxial oxides also degrade graphene. In this study, we show for the first time that a direct correlation exists between the microstructure of graphene, its getting defective on exposure to the pulsed laser deposition plume, and the crystalline quality of the barium titanate film deposited on top. A controlled aperture method was used to reduce graphene damage. Even so, the degree of damage is more at the graphene grain boundaries than within the grains. Large grain-sized greater than 300 microns, graphene suffered less damage and yielded a film comparable to that grown directly on a strontium titanate substrate with a rocking curve half width of 0.6 degrees. Using large grain-sized bi-layer graphene, 4 mm x 5 mm oxide layers were successfully exfoliated and transferred onto SiOx-Si. These insights pave the way for the heterogeneous integration of functional oxides on foreign substrates, holding significant implications for commercializing perovskite oxides by integrating them with Si-CMOS and flexible electronics. △ Less

Submitted 15 August, 2024; originally announced August 2024.

Comments: 36 pages, 18 figures

Heterogeneous integration of high endurance ferroelectric and piezoelectric epitaxial BaTiO$_3$ devices on Si

Authors: Asraful Haque, Harshal Jason D'Souza, Shubham Kumar Parate, Rama Satya Sandilya, Srinivasan Raghavan, Pavan Nukala

Abstract: Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal substrates followed by transfer to a desired substrate show promise of achieving excellent device-quality films. However, beyond simple demonstrations of t… ▽ More Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal substrates followed by transfer to a desired substrate show promise of achieving excellent device-quality films. However, beyond simple demonstrations of the existence of ferroelectricity, robust devices with high endurance were not yet demonstrated on Si using the latter approach. Here, using a novel two-step approach to synthesize epitaxial BTO using pulsed laser deposition (PLD) on water soluble Sr3Al2O7 (SAO) (on SrTiO$_3$ (STO) substrates), we demonstrate successful integration of high-quality BTO capacitors on Si, with Pr of 7 uC/cm2, Ec 150 kV/cm, ferroelectric and electromechanical endurance of greater than $10^6$ cycles. We further address the challenge of cracking and disintegration of thicker films by first transferring a large area (5 mm x 5 mm) of the templated layer of BTO (~30 nm thick) on the desired substrate, followed by the growth of high-quality BTO on this substrate, as revealed by HRXRD and HRSTEM measurements. These templated Si substrates offer a versatile platform for integrating any epitaxial complex oxides with diverse functionalities onto any inorganic substrate. △ Less

Submitted 15 July, 2024; originally announced July 2024.

Comments: 29 pages, 12 figures

Using Machine Learning to predict Characteristics of Microstrip Line and Microstrip Patch Antenna

Authors: Bharath Balaji, S. Raghavan

Abstract: This study, conducted in 2017, explores the use of Machine learning algorithms to predict Characteristics of Transmission Lines such as Impedance or resonance frequency using design parameters of Transmission Lines. Using formulas and equations that define the characteristics of Transmission lines, training data was generated. We trained different models for this dataset. The extent of deviation o… ▽ More This study, conducted in 2017, explores the use of Machine learning algorithms to predict Characteristics of Transmission Lines such as Impedance or resonance frequency using design parameters of Transmission Lines. Using formulas and equations that define the characteristics of Transmission lines, training data was generated. We trained different models for this dataset. The extent of deviation of predicted output from the actual output was measured in terms of maximum error and average error. This helped determine how well an algorithm worked for a particular transmission line. Further, the best-suited algorithm for each transmission line under consideration was found based on the error △ Less

Submitted 17 May, 2024; originally announced June 2024.

Comments: 6 pages, 8 figures, 2 tables

Enhancing Q&A with Domain-Specific Fine-Tuning and Iterative Reasoning: A Comparative Study

Authors: Zooey Nguyen, Anthony Annunziata, Vinh Luong, Sang Dinh, Quynh Le, Anh Hai Ha, Chanh Le, Hong An Phan, Shruti Raghavan, Christopher Nguyen

Abstract: This paper investigates the impact of domain-specific model fine-tuning and of reasoning mechanisms on the performance of question-answering (Q&A) systems powered by large language models (LLMs) and Retrieval-Augmented Generation (RAG). Using the FinanceBench SEC financial filings dataset, we observe that, for RAG, combining a fine-tuned embedding model with a fine-tuned LLM achieves better accura… ▽ More This paper investigates the impact of domain-specific model fine-tuning and of reasoning mechanisms on the performance of question-answering (Q&A) systems powered by large language models (LLMs) and Retrieval-Augmented Generation (RAG). Using the FinanceBench SEC financial filings dataset, we observe that, for RAG, combining a fine-tuned embedding model with a fine-tuned LLM achieves better accuracy than generic models, with relatively greater gains attributable to fine-tuned embedding models. Additionally, employing reasoning iterations on top of RAG delivers an even bigger jump in performance, enabling the Q&A systems to get closer to human-expert quality. We discuss the implications of such findings, propose a structured technical design space capturing major technical components of Q&A AI, and provide recommendations for making high-impact technical choices for such components. We plan to follow up on this work with actionable guides for AI teams and further investigations into the impact of domain-specific augmentation in RAG and into agentic AI capabilities such as advanced planning and reasoning. △ Less

Submitted 19 April, 2024; v1 submitted 17 April, 2024; originally announced April 2024.

Comments: Fixed typo of OODA's score on harder-question set in Table 2

DELTA: Decoupling Long-Tailed Online Continual Learning

Authors: Siddeshwar Raghavan, Jiangpeng He, Fengqing Zhu

Abstract: A significant challenge in achieving ubiquitous Artificial Intelligence is the limited ability of models to rapidly learn new information in real-world scenarios where data follows long-tailed distributions, all while avoiding forgetting previously acquired knowledge. In this work, we study the under-explored problem of Long-Tailed Online Continual Learning (LTOCL), which aims to learn new tasks f… ▽ More A significant challenge in achieving ubiquitous Artificial Intelligence is the limited ability of models to rapidly learn new information in real-world scenarios where data follows long-tailed distributions, all while avoiding forgetting previously acquired knowledge. In this work, we study the under-explored problem of Long-Tailed Online Continual Learning (LTOCL), which aims to learn new tasks from sequentially arriving class-imbalanced data streams. Each data is observed only once for training without knowing the task data distribution. We present DELTA, a decoupled learning approach designed to enhance learning representations and address the substantial imbalance in LTOCL. We enhance the learning process by adapting supervised contrastive learning to attract similar samples and repel dissimilar (out-of-class) samples. Further, by balancing gradients during training using an equalization loss, DELTA significantly enhances learning outcomes and successfully mitigates catastrophic forgetting. Through extensive evaluation, we demonstrate that DELTA improves the capacity for incremental learning, surpassing existing OCL methods. Our results suggest considerable promise for applying OCL in real-world applications. △ Less

Submitted 5 April, 2024; originally announced April 2024.

Comments: CVPR Workshop acceptance archival track

Data-Driven Traffic Reconstruction and Kernel Methods for Identifying Stop-and-Go Congestion

Authors: Edgar Ramirez Sanchez, Shreyaa Raghavan, Cathy Wu

Abstract: Identifying stop-and-go events (SAGs) in traffic flow presents an important avenue for advancing data-driven research for climate change mitigation and sustainability, owing to their substantial impact on carbon emissions, travel time, fuel consumption, and roadway safety. In fact, SAGs are estimated to account for 33-50% of highway driving externalities. However, insufficient attention has been p… ▽ More Identifying stop-and-go events (SAGs) in traffic flow presents an important avenue for advancing data-driven research for climate change mitigation and sustainability, owing to their substantial impact on carbon emissions, travel time, fuel consumption, and roadway safety. In fact, SAGs are estimated to account for 33-50% of highway driving externalities. However, insufficient attention has been paid to precisely quantifying where, when, and how much these SAGs take place -necessary for downstream decision making, such as intervention design and policy analysis. A key challenge is that the data available to researchers and governments are typically sparse and aggregated to a granularity that obscures SAGs. To overcome such data limitations, this study thus explores the use of traffic reconstruction techniques for SAG identification. In particular, we introduce a kernel-based method for identifying spatio-temporal features in traffic and leverage bootstrapping to quantify the uncertainty of the reconstruction process. Experimental results on California highway data demonstrate the promise of the method for capturing SAGs. This work contributes to a foundation for data-driven decision making to advance sustainability of traffic systems. △ Less

Submitted 5 December, 2023; originally announced December 2023.

Comments: Presented at NeurIPS 2023 workshops: Tackling Climate Change with Machine Learning & Computational Sustainability

Model Adaptation for ASR in low-resource Indian Languages

Authors: Abhayjeet Singh, Arjun Singh Mehta, Ashish Khuraishi K S, Deekshitha G, Gauri Date, Jai Nanavati, Jesuraja Bandekar, Karnalius Basumatary, Karthika P, Sandhya Badiger, Sathvik Udupa, Saurabh Kumar, Savitha, Prasanta Kumar Ghosh, Prashanthi V, Priyanka Pai, Raoul Nanavati, Rohan Saxena, Sai Praneeth Reddy Mora, Srinivasa Raghavan

Abstract: Automatic speech recognition (ASR) performance has improved drastically in recent years, mainly enabled by self-supervised learning (SSL) based acoustic models such as wav2vec2 and large-scale multi-lingual training like Whisper. A huge challenge still exists for low-resource languages where the availability of both audio and text is limited. This is further complicated by the presence of multiple… ▽ More Automatic speech recognition (ASR) performance has improved drastically in recent years, mainly enabled by self-supervised learning (SSL) based acoustic models such as wav2vec2 and large-scale multi-lingual training like Whisper. A huge challenge still exists for low-resource languages where the availability of both audio and text is limited. This is further complicated by the presence of multiple dialects like in Indian languages. However, many Indian languages can be grouped into the same families and share the same script and grammatical structure. This is where a lot of adaptation and fine-tuning techniques can be applied to overcome the low-resource nature of the data by utilising well-resourced similar languages. In such scenarios, it is important to understand the extent to which each modality, like acoustics and text, is important in building a reliable ASR. It could be the case that an abundance of acoustic data in a language reduces the need for large text-only corpora. Or, due to the availability of various pretrained acoustic models, the vice-versa could also be true. In this proposed special session, we encourage the community to explore these ideas with the data in two low-resource Indian languages of Bengali and Bhojpuri. These approaches are not limited to Indian languages, the solutions are potentially applicable to various languages spoken around the world. △ Less

Submitted 16 July, 2023; originally announced July 2023.

Comments: ASRU Special session overview paper

Robust atmospherically stable hybrid SrVO3/Graphene//SrTiO3 template for fast and facile large-area transfer of complex oxides onto Si

Authors: Asraful Haque, Suman Kumar Mandal, Antony Jeyaseelan, Sandeep Vura, Pavan Nukala, Srinivasan Raghavan

Abstract: Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr3Al2O6 (SAO) at the interface, and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less… ▽ More Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr3Al2O6 (SAO) at the interface, and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers, without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO3 (SVO) as a sacrificial buffer layer. We show that the graphene layer enhances the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid template by growing ferroelectric BaTiO3 (BTO) via PLD and Pb(Zr, Ti)O3 (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics. △ Less

Submitted 6 July, 2023; originally announced July 2023.

Comments: 35 pages, 23 figures

StyleTTS 2: Towards Human-Level Text-to-Speech through Style Diffusion and Adversarial Training with Large Speech Language Models

Authors: Yinghao Aaron Li, Cong Han, Vinay S. Raghavan, Gavin Mischler, Nima Mesgarani

Abstract: In this paper, we present StyleTTS 2, a text-to-speech (TTS) model that leverages style diffusion and adversarial training with large speech language models (SLMs) to achieve human-level TTS synthesis. StyleTTS 2 differs from its predecessor by modeling styles as a latent random variable through diffusion models to generate the most suitable style for the text without requiring reference speech, a… ▽ More In this paper, we present StyleTTS 2, a text-to-speech (TTS) model that leverages style diffusion and adversarial training with large speech language models (SLMs) to achieve human-level TTS synthesis. StyleTTS 2 differs from its predecessor by modeling styles as a latent random variable through diffusion models to generate the most suitable style for the text without requiring reference speech, achieving efficient latent diffusion while benefiting from the diverse speech synthesis offered by diffusion models. Furthermore, we employ large pre-trained SLMs, such as WavLM, as discriminators with our novel differentiable duration modeling for end-to-end training, resulting in improved speech naturalness. StyleTTS 2 surpasses human recordings on the single-speaker LJSpeech dataset and matches it on the multispeaker VCTK dataset as judged by native English speakers. Moreover, when trained on the LibriTTS dataset, our model outperforms previous publicly available models for zero-shot speaker adaptation. This work achieves the first human-level TTS on both single and multispeaker datasets, showcasing the potential of style diffusion and adversarial training with large SLMs. The audio demos and source code are available at https://styletts2.github.io/. △ Less

Submitted 19 November, 2023; v1 submitted 13 June, 2023; originally announced June 2023.

Comments: NeurIPS 2023

Polarization Independent Grating in GaN-on-Sapphire Photonic Integrated Circuit

Authors: Suraj, Shashwat Rathkanthiwar, Srinivasan Raghavan, Shankar Kumar Selvaraja

Abstract: In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in the GaN-on-Sapphire platform. We provide a detailed demonstration of the material characterization, device simulation, and experimental results. We achieve a grating coupler efficiency of -5.2 dB/coupler with a 1dB and 3dB bandwidth of 40 nm and 80 nm, respectively. W… ▽ More In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in the GaN-on-Sapphire platform. We provide a detailed demonstration of the material characterization, device simulation, and experimental results. We achieve a grating coupler efficiency of -5.2 dB/coupler with a 1dB and 3dB bandwidth of 40 nm and 80 nm, respectively. We measure a single-mode waveguide loss of -6 dB/cm. The losses measured here are the lowest in a GaN-on-Sapphire photonic circuit. This demonstration provides opportunities for the development of on-chip linear and non-linear optical processes using the GaN-on-Sapphire platform. To the best of our knowledge, this is the first demonstration of an integrated photonic device using a GaN HEMT stack with 2D electron gas. △ Less

Submitted 25 May, 2023; originally announced May 2023.

Comments: 12 pages, 12 figures

Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100

Authors: Sandeep Vura, Shubham Kumar Parate, Subhajit Pal, Upanya Khandelwal, Rajeev Kumar Rai, Sri Harsha Molleti, Vishnu Kumar, Rama Satya Sandilya Ventrapragada, Girish Patil, Mudit Jain, Ambresh Mallya, Majid Ahmadi, Bart Kooi, Sushobhan Avasthi, Rajeev Ranjan, Srinivasan Raghavan, Saurabh Chandorkar, Pavan Nukala

Abstract: Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values o… ▽ More Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04 x 10-14 m2 per V2 at 1 kHz, and 3.87 x 10-15 m2 per V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained even after cycling the devices >5000 times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates very well with the observed giant electrostrictive response. These films show large coefficient of thermal expansion (2.36 x 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Comments: 26 pages, 4 figures, 8 supplementary figures

Online Class-Incremental Learning For Real-World Food Image Classification

Authors: Siddeshwar Raghavan, Jiangpeng He, Fengqing Zhu

Abstract: Food image classification is essential for monitoring health and tracking dietary in image-based dietary assessment methods. However, conventional systems often rely on static datasets with fixed classes and uniform distribution. In contrast, real-world food consumption patterns, shaped by cultural, economic, and personal influences, involve dynamic and evolving data. Thus, require the classificat… ▽ More Food image classification is essential for monitoring health and tracking dietary in image-based dietary assessment methods. However, conventional systems often rely on static datasets with fixed classes and uniform distribution. In contrast, real-world food consumption patterns, shaped by cultural, economic, and personal influences, involve dynamic and evolving data. Thus, require the classification system to cope with continuously evolving data. Online Class Incremental Learning (OCIL) addresses the challenge of learning continuously from a single-pass data stream while adapting to the new knowledge and reducing catastrophic forgetting. Experience Replay (ER) based OCIL methods store a small portion of previous data and have shown encouraging performance. However, most existing OCIL works assume that the distribution of encountered data is perfectly balanced, which rarely happens in real-world scenarios. In this work, we explore OCIL for real-world food image classification by first introducing a probabilistic framework to simulate realistic food consumption scenarios. Subsequently, we present an attachable Dynamic Model Update (DMU) module designed for existing ER methods, which enables the selection of relevant images for model training, addressing challenges arising from data repetition and imbalanced sample occurrences inherent in realistic food consumption patterns within the OCIL framework. Our performance evaluation demonstrates significant enhancements compared to established ER methods, showing great potential for lifelong learning in real-world food image classification scenarios. The code of our method is publicly accessible at https://gitlab.com/viper-purdue/OCIL-real-world-food-image-classification △ Less

Submitted 15 January, 2024; v1 submitted 12 January, 2023; originally announced January 2023.

Comments: Accepted at IEEE/CVF Winter Conference on Applications of Computer Vision (WACV 2024)

Self-assembled neuromorphic networks at self-organized criticality in Ag-hBN platform

Authors: Ankit Rao, Sooraj Sanjay, Majid Ahmadi, Anirudh Venugopalrao, Navakanta Bhat, Bart Kooi, Srinivasan Raghavan, Pavan Nukala

Abstract: Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate that a system comprising of multilayer hexagonal Boron Nitride (hBN) films contacted with Silver (Ag),… ▽ More Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate that a system comprising of multilayer hexagonal Boron Nitride (hBN) films contacted with Silver (Ag), that can uniquely host two different self-assembled networks, which are self-organized at criticality (SOC). This system shows bipolar resistive switching between high resistance (HRS) and low resistance states (LRS). In the HRS, Ag clusters (nodes) intercalate in the van der Waals gaps of hBN forming a network of tunnel junctions, whereas the LRS contains a network of Ag filaments. The temporal avalanche dynamics in both these states exhibit power-law scaling, long-range temporal correlation, and SOC. These networks can be tuned from one to another with voltage as a control parameter. For the first time, different neuron-like networks are realized in a single CMOS compatible, 2D materials platform. △ Less

Submitted 7 December, 2022; originally announced January 2023.

FastFlow: AI for Fast Urban Wind Velocity Prediction

Authors: Shi Jer Low, Venugopalan, S. G. Raghavan, Harish Gopalan, Jian Cheng Wong, Justin Yeoh, Chin Chun Ooi

Abstract: Data-driven approaches, including deep learning, have shown great promise as surrogate models across many domains. These extend to various areas in sustainability. An interesting direction for which data-driven methods have not been applied much yet is in the quick quantitative evaluation of urban layouts for planning and design. In particular, urban designs typically involve complex trade-offs be… ▽ More Data-driven approaches, including deep learning, have shown great promise as surrogate models across many domains. These extend to various areas in sustainability. An interesting direction for which data-driven methods have not been applied much yet is in the quick quantitative evaluation of urban layouts for planning and design. In particular, urban designs typically involve complex trade-offs between multiple objectives, including limits on urban build-up and/or consideration of urban heat island effect. Hence, it can be beneficial to urban planners to have a fast surrogate model to predict urban characteristics of a hypothetical layout, e.g. pedestrian-level wind velocity, without having to run computationally expensive and time-consuming high-fidelity numerical simulations. This fast surrogate can then be potentially integrated into other design optimization frameworks, including generative models or other gradient-based methods. Here we present the use of CNNs for urban layout characterization that is typically done via high-fidelity numerical simulation. We further apply this model towards a first demonstration of its utility for data-driven pedestrian-level wind velocity prediction. The data set in this work comprises results from high-fidelity numerical simulations of wind velocities for a diverse set of realistic urban layouts, based on randomized samples from a real-world, highly built-up urban city. We then provide prediction results obtained from the trained CNN, demonstrating test errors of under 0.1 m/s for previously unseen urban layouts. We further illustrate how this can be useful for purposes such as rapid evaluation of pedestrian wind velocity for a potential new layout. It is hoped that this data set will further accelerate research in data-driven urban AI, even as our baseline model facilitates quantitative comparison to future methods. △ Less

Submitted 22 November, 2022; originally announced November 2022.

Effect of Sintering Temperature on Microstructure and Mechanical Properties of Molded Martian and Lunar Regolith

Authors: Peter Warren, Nandhini Raju, Hossein Ebrahimi, Milos Krsmanovic, Seetha Raghavan, Jayanta Kapat, Ranajay Ghosh

Abstract: Cylindrical specimens of Martian and Lunar regolith simulants were molded using a salt water binder and sintered at various temperatures for comparing microstructure, mechanical properties and shrinkage. Material microstructure are reported using optical microscope and material testing is done using an MTS universal testing machine. The experimental protocol was executed twice, once using Mars glo… ▽ More Cylindrical specimens of Martian and Lunar regolith simulants were molded using a salt water binder and sintered at various temperatures for comparing microstructure, mechanical properties and shrinkage. Material microstructure are reported using optical microscope and material testing is done using an MTS universal testing machine. The experimental protocol was executed twice, once using Mars global simulant (MGS-1), and once using Lunar mare simulant (LMS-1). The specimens were fabricated via an injection molding method, designed to replicate typical masonary units as well as the green stage of Binder Jet Technique, an important additive manufacturing (AM) technique. Results show that for both the Martian and Lunar regolith that the optimal sintering temperature was somewhere between 1100 C and 1200 C. The compressive strength for both the Martian and Lunar masonary samples, that received optimal sintering conditions, was determined to be sufficient for construction of extraterrestrial structures. The work demonstrates that both the Martian and Lunar regolith show potential to be used as extra terrestrial masonary and as parent material for extra terrestrial BJT additive manufacturing processes. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Physics to the Rescue: Deep Non-line-of-sight Reconstruction for High-speed Imaging

Authors: Fangzhou Mu, Sicheng Mo, Jiayong Peng, Xiaochun Liu, Ji Hyun Nam, Siddeshwar Raghavan, Andreas Velten, Yin Li

Abstract: Computational approach to imaging around the corner, or non-line-of-sight (NLOS) imaging, is becoming a reality thanks to major advances in imaging hardware and reconstruction algorithms. A recent development towards practical NLOS imaging, Nam et al. demonstrated a high-speed non-confocal imaging system that operates at 5Hz, 100x faster than the prior art. This enormous gain in acquisition rate,… ▽ More Computational approach to imaging around the corner, or non-line-of-sight (NLOS) imaging, is becoming a reality thanks to major advances in imaging hardware and reconstruction algorithms. A recent development towards practical NLOS imaging, Nam et al. demonstrated a high-speed non-confocal imaging system that operates at 5Hz, 100x faster than the prior art. This enormous gain in acquisition rate, however, necessitates numerous approximations in light transport, breaking many existing NLOS reconstruction methods that assume an idealized image formation model. To bridge the gap, we present a novel deep model that incorporates the complementary physics priors of wave propagation and volume rendering into a neural network for high-quality and robust NLOS reconstruction. This orchestrated design regularizes the solution space by relaxing the image formation model, resulting in a deep model that generalizes well on real captures despite being exclusively trained on synthetic data. Further, we devise a unified learning framework that enables our model to be flexibly trained using diverse supervision signals, including target intensity images or even raw NLOS transient measurements. Once trained, our model renders both intensity and depth images at inference time in a single forward pass, capable of processing more than 5 captures per second on a high-end GPU. Through extensive qualitative and quantitative experiments, we show that our method outperforms prior physics and learning based approaches on both synthetic and real measurements. We anticipate that our method along with the fast capturing system will accelerate future development of NLOS imaging for real world applications that require high-speed imaging. △ Less

Submitted 5 August, 2022; v1 submitted 2 May, 2022; originally announced May 2022.

Comments: ICCP 2022 (TPAMI Special Issue on Computational Photography). Project page: https://pages.cs.wisc.edu/~fmu/nlos3d/

Hall field-induced magneto-oscillations near charge neutrality point in graphene

Authors: Mrityunjay Pandey, Kenji Watanabe, Takashi Taniguchi, Srinivasan Raghavan, U. Chandni

Abstract: We explore the non-equilibrium transport regime in graphene using a large dc current in combination with a perpendicular magnetic field. The strong in-plane Hall field that is generated in the bulk of the graphene channel results in Landau levels that are tilted spatially. The energy of cyclotron orbits in the bulk varies as a function of the spatial position of the guiding center, enabling us to… ▽ More We explore the non-equilibrium transport regime in graphene using a large dc current in combination with a perpendicular magnetic field. The strong in-plane Hall field that is generated in the bulk of the graphene channel results in Landau levels that are tilted spatially. The energy of cyclotron orbits in the bulk varies as a function of the spatial position of the guiding center, enabling us to observe a series of compelling features. While Shubnikov-de Haas oscillations are predictably suppressed in the presence of the Hall field, a set of fresh magnetoresistance oscillations emerge near the charge neutrality point as a function of dc current. Two branches of oscillations with linear dispersions are evident as we vary carrier density and dc current, the velocity of which closely resembles the TA and LA phonon modes, suggestive of phonon-assisted intra-Landau level transitions between adjacent cyclotron orbits. Our results offer unique possibilities to explore non-equilibrium phenomena in two-dimensional materials and van der Waals heterostructures. △ Less

Submitted 31 March, 2022; originally announced March 2022.

Comments: 8 pages, 6 figures

Model-Agnostic Hybrid Numerical Weather Prediction and Machine Learning Paradigm for Solar Forecasting in the Tropics

Authors: Nigel Yuan Yun Ng, Harish Gopalan, Venugopalan S. G. Raghavan, Chin Chun Ooi

Abstract: Numerical weather prediction (NWP) and machine learning (ML) methods are popular for solar forecasting. However, NWP models have multiple possible physical parameterizations, which requires site-specific NWP optimization. This is further complicated when regional NWP models are used with global climate models with different possible parameterizations. In this study, an alternative approach is prop… ▽ More Numerical weather prediction (NWP) and machine learning (ML) methods are popular for solar forecasting. However, NWP models have multiple possible physical parameterizations, which requires site-specific NWP optimization. This is further complicated when regional NWP models are used with global climate models with different possible parameterizations. In this study, an alternative approach is proposed and evaluated for four radiation models. Weather Research and Forecasting (WRF) model is run in both global and regional mode to provide an estimate for solar irradiance. This estimate is then post-processed using ML to provide a final prediction. Normalized root-mean-square error from WRF is reduced by up to 40-50% with this ML error correction model. Results obtained using CAM, GFDL, New Goddard and RRTMG radiation models were comparable after this correction, negating the need for WRF parameterization tuning. Other models incorporating nearby locations and sensor data are also evaluated, with the latter being particularly promising. △ Less

Submitted 9 December, 2021; originally announced December 2021.

PATO: Producibility-Aware Topology Optimization using Deep Learning for Metal Additive Manufacturing

Authors: Naresh S. Iyer, Amir M. Mirzendehdel, Sathyanarayanan Raghavan, Yang Jiao, Erva Ulu, Morad Behandish, Saigopal Nelaturi, Dean M. Robinson

Abstract: In this paper, we propose PATO-a producibility-aware topology optimization (TO) framework to help efficiently explore the design space of components fabricated using metal additive manufacturing (AM), while ensuring manufacturability with respect to cracking. Specifically, parts fabricated through Laser Powder Bed Fusion are prone to defects such as warpage or cracking due to high residual stress… ▽ More In this paper, we propose PATO-a producibility-aware topology optimization (TO) framework to help efficiently explore the design space of components fabricated using metal additive manufacturing (AM), while ensuring manufacturability with respect to cracking. Specifically, parts fabricated through Laser Powder Bed Fusion are prone to defects such as warpage or cracking due to high residual stress values generated from the steep thermal gradients produced during the build process. Maturing the design for such parts and planning their fabrication can span months to years, often involving multiple handoffs between design and manufacturing engineers. PATO is based on the a priori discovery of crack-free designs, so that the optimized part can be built defect-free at the outset. To ensure that the design is crack free during optimization, producibility is explicitly encoded within the standard formulation of TO, using a crack index. Multiple crack indices are explored and using experimental validation, maximum shear strain index (MSSI) is shown to be an accurate crack index. Simulating the build process is a coupled, multi-physics computation and incorporating it in the TO loop can be computationally prohibitive. We leverage the current advances in deep convolutional neural networks and present a high-fidelity surrogate model based on an Attention-based U-Net architecture to predict the MSSI values as a spatially varying field over the part's domain. Further, we employ automatic differentiation to directly compute the gradient of maximum MSSI with respect to the input design variables and augment it with the performance-based sensitivity field to optimize the design while considering the trade-off between weight, manufacturability, and functionality. We demonstrate the effectiveness of the proposed method through benchmark studies in 3D as well as experimental validation. △ Less

Submitted 8 December, 2021; originally announced December 2021.

Towards Non-Line-of-Sight Photography

Authors: Jiayong Peng, Fangzhou Mu, Ji Hyun Nam, Siddeshwar Raghavan, Yin Li, Andreas Velten, Zhiwei Xiong

Abstract: Non-line-of-sight (NLOS) imaging is based on capturing the multi-bounce indirect reflections from the hidden objects. Active NLOS imaging systems rely on the capture of the time of flight of light through the scene, and have shown great promise for the accurate and robust reconstruction of hidden scenes without the need for specialized scene setups and prior assumptions. Despite that existing meth… ▽ More Non-line-of-sight (NLOS) imaging is based on capturing the multi-bounce indirect reflections from the hidden objects. Active NLOS imaging systems rely on the capture of the time of flight of light through the scene, and have shown great promise for the accurate and robust reconstruction of hidden scenes without the need for specialized scene setups and prior assumptions. Despite that existing methods can reconstruct 3D geometries of the hidden scene with excellent depth resolution, accurately recovering object textures and appearance with high lateral resolution remains an challenging problem. In this work, we propose a new problem formulation, called NLOS photography, to specifically address this deficiency. Rather than performing an intermediate estimate of the 3D scene geometry, our method follows a data-driven approach and directly reconstructs 2D images of a NLOS scene that closely resemble the pictures taken with a conventional camera from the location of the relay wall. This formulation largely simplifies the challenging reconstruction problem by bypassing the explicit modeling of 3D geometry, and enables the learning of a deep model with a relatively small training dataset. The results are NLOS reconstructions of unprecedented lateral resolution and image quality. △ Less

Submitted 17 April, 2022; v1 submitted 16 September, 2021; originally announced September 2021.

Comments: The proposed method and dataset are required further validations

Quantum Oscillations between weakly coupled Bose-Einstein Condensates: Evolution in a Non-degenerate Double Well

Authors: John D. Andersen, Srikanth Raghavan, V. M. Kenkre

Abstract: We discuss coherent atomic oscillations between two weakly coupled Bose-Einstein condensates that are energetically different. The weak link is notionally provided by a laser barrier in a (possibly asymmetric) multi-well trap or by Raman coupling between condensates in different hyperfine levels. The resultant boson Josephson junction dynamics is described by a double-well nonlinear Gross-Pitaevsk… ▽ More We discuss coherent atomic oscillations between two weakly coupled Bose-Einstein condensates that are energetically different. The weak link is notionally provided by a laser barrier in a (possibly asymmetric) multi-well trap or by Raman coupling between condensates in different hyperfine levels. The resultant boson Josephson junction dynamics is described by a double-well nonlinear Gross-Pitaevskii equation. On the basis of a new set of Jacobian elliptic function solutions, we describe the period of the oscillations as well as associated quantities and predict novel observable consequences of the interplay of the energy difference and initial phase difference between the two condensate populations. △ Less

Submitted 19 August, 2021; originally announced August 2021.

Comments: 18 pages, 5 figures

LipBaB: Computing exact Lipschitz constant of ReLU networks

Authors: Aritra Bhowmick, Meenakshi D'Souza, G. Srinivasa Raghavan

Abstract: The Lipschitz constant of neural networks plays an important role in several contexts of deep learning ranging from robustness certification and regularization to stability analysis of systems with neural network controllers. Obtaining tight bounds of the Lipschitz constant is therefore important. We introduce LipBaB, a branch and bound framework to compute certified bounds of the local Lipschitz… ▽ More The Lipschitz constant of neural networks plays an important role in several contexts of deep learning ranging from robustness certification and regularization to stability analysis of systems with neural network controllers. Obtaining tight bounds of the Lipschitz constant is therefore important. We introduce LipBaB, a branch and bound framework to compute certified bounds of the local Lipschitz constant of deep neural networks with ReLU activation functions up to any desired precision. We achieve this by bounding the norm of the Jacobians, corresponding to different activation patterns of the network caused within the input domain. Our algorithm can provide provably exact computation of the Lipschitz constant for any p-norm. △ Less

Submitted 6 July, 2021; v1 submitted 12 May, 2021; originally announced May 2021.

Multilingual and code-switching ASR challenges for low resource Indian languages

Authors: Anuj Diwan, Rakesh Vaideeswaran, Sanket Shah, Ankita Singh, Srinivasa Raghavan, Shreya Khare, Vinit Unni, Saurabh Vyas, Akash Rajpuria, Chiranjeevi Yarra, Ashish Mittal, Prasanta Kumar Ghosh, Preethi Jyothi, Kalika Bali, Vivek Seshadri, Sunayana Sitaram, Samarth Bharadwaj, Jai Nanavati, Raoul Nanavati, Karthik Sankaranarayanan, Tejaswi Seeram, Basil Abraham

Abstract: Recently, there is increasing interest in multilingual automatic speech recognition (ASR) where a speech recognition system caters to multiple low resource languages by taking advantage of low amounts of labeled corpora in multiple languages. With multilingualism becoming common in today's world, there has been increasing interest in code-switching ASR as well. In code-switching, multiple language… ▽ More Recently, there is increasing interest in multilingual automatic speech recognition (ASR) where a speech recognition system caters to multiple low resource languages by taking advantage of low amounts of labeled corpora in multiple languages. With multilingualism becoming common in today's world, there has been increasing interest in code-switching ASR as well. In code-switching, multiple languages are freely interchanged within a single sentence or between sentences. The success of low-resource multilingual and code-switching ASR often depends on the variety of languages in terms of their acoustics, linguistic characteristics as well as the amount of data available and how these are carefully considered in building the ASR system. In this challenge, we would like to focus on building multilingual and code-switching ASR systems through two different subtasks related to a total of seven Indian languages, namely Hindi, Marathi, Odia, Tamil, Telugu, Gujarati and Bengali. For this purpose, we provide a total of ~600 hours of transcribed speech data, comprising train and test sets, in these languages including two code-switched language pairs, Hindi-English and Bengali-English. We also provide a baseline recipe for both the tasks with a WER of 30.73% and 32.45% on the test sets of multilingual and code-switching subtasks, respectively. △ Less

Submitted 31 March, 2021; originally announced April 2021.

Comments: 6 pages

Addressing catastrophic forgetting for medical domain expansion

Authors: Sharut Gupta, Praveer Singh, Ken Chang, Liangqiong Qu, Mehak Aggarwal, Nishanth Arun, Ashwin Vaswani, Shruti Raghavan, Vibha Agarwal, Mishka Gidwani, Katharina Hoebel, Jay Patel, Charles Lu, Christopher P. Bridge, Daniel L. Rubin, Jayashree Kalpathy-Cramer

Abstract: Model brittleness is a key concern when deploying deep learning models in real-world medical settings. A model that has high performance at one institution may suffer a significant decline in performance when tested at other institutions. While pooling datasets from multiple institutions and retraining may provide a straightforward solution, it is often infeasible and may compromise patient privac… ▽ More Model brittleness is a key concern when deploying deep learning models in real-world medical settings. A model that has high performance at one institution may suffer a significant decline in performance when tested at other institutions. While pooling datasets from multiple institutions and retraining may provide a straightforward solution, it is often infeasible and may compromise patient privacy. An alternative approach is to fine-tune the model on subsequent institutions after training on the original institution. Notably, this approach degrades model performance at the original institution, a phenomenon known as catastrophic forgetting. In this paper, we develop an approach to address catastrophic forget-ting based on elastic weight consolidation combined with modulation of batch normalization statistics under two scenarios: first, for expanding the domain from one imaging system's data to another imaging system's, and second, for expanding the domain from a large multi-institutional dataset to another single institution dataset. We show that our approach outperforms several other state-of-the-art approaches and provide theoretical justification for the efficacy of batch normalization modulation. The results of this study are generally applicable to the deployment of any clinical deep learning model which requires domain expansion. △ Less

Submitted 24 March, 2021; originally announced March 2021.

Comments: First three authors contributed equally

Spontaneous time reversal symmetry breaking at individual grain boundaries in graphene

Authors: Kimberly Hsieh, Vidya Kochat, Tathagata Biswas, Chandra Sekhar Tiwary, Abhishek Mishra, Gopalakrishnan Ramalingam, Aditya Jayaraman, Kamanio Chattopadhyay, Srinivasan Raghavan, Manish Jain, Arindam Ghosh

Abstract: Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum trans… ▽ More Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum transport across the GBs indicate spin-scattering-induced dephasing, and hence formation of local magnetic moments, below $T\lesssim 4$ K, we observe complete lifting of TRS at high carrier densities ($n \gtrsim 5\times 10^{12}$cm$^{-2}$) and low temperature ($T\lesssim 2$ K). An unprecedented thirty times reduction in the UCF magnitude with increasing doping density further supports the possibility of an emergent frozen magnetic state at the GBs. Our experimental results suggest that realistic GBs of graphene can be a promising resource for new electronic phases and spin-based applications. △ Less

Submitted 30 March, 2021; v1 submitted 9 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Lett. 126, 206803 (2021)

UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

Authors: Swanand V. Solanke, Rohith Soman, Muralidharan Rangarajan, Srinivasan Raghavan, Digbijoy N. Nath

Abstract: In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed two distinct detection peaks in spectral responsivity, one at 365 nm and another at 850 nm, corresponding to band edges of GaN and α-In2Se3 respectively, with considera… ▽ More In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed two distinct detection peaks in spectral responsivity, one at 365 nm and another at 850 nm, corresponding to band edges of GaN and α-In2Se3 respectively, with considerable rejection in visible spectrum. Normalised responsivity values were found out to be ~70 mA/W at both 365 nm and 850 nm for the bias of -3V along with photo-to-dark current ratio of ~665 and ~75 in that order. The Devices also showed fast transient response with no persistent photoconductivity (PPC). The specific detectivity values estimated were ~10^11 Jones and ~10^10 Jones corresponding to illumination at 365 nm and 850 nm respectively. A good linearity of ~0.4 was observed in power dependent analysis of spectral responsivity at 365 nm. The device performance, post annealing was also studied. This study is expected to pave way for new type of optoelectronic devices by integrating direct bandgap layered material like α-In2Se3 and wide bandgap semiconductors. △ Less

Submitted 31 August, 2020; originally announced August 2020.

Comments: 25 pages, 11 figures in main article, 5 figures in supplementary information, 1 table,journal

A Calibration Approach to Transportability and Data-Fusion with Observational Data

Authors: Kevin P. Josey, Fan Yang, Debashis Ghosh, Sridharan Raghavan

Abstract: Two important considerations in clinical research studies are proper evaluations of internal and external validity. While randomized clinical trials can overcome several threats to internal validity, they may be prone to poor external validity. Conversely, large prospective observational studies sampled from a broadly generalizable population may be externally valid, yet susceptible to threats to… ▽ More Two important considerations in clinical research studies are proper evaluations of internal and external validity. While randomized clinical trials can overcome several threats to internal validity, they may be prone to poor external validity. Conversely, large prospective observational studies sampled from a broadly generalizable population may be externally valid, yet susceptible to threats to internal validity, particularly confounding. Thus, methods that address confounding and enhance transportability of study results across populations are essential for internally and externally valid causal inference, respectively. These issues persist for another problem closely related to transportability known as data-fusion. We develop a calibration method to generate balancing weights that address confounding and sampling bias, thereby enabling valid estimation of the target population average treatment effect. We compare the calibration approach to two additional doubly-robust methods that estimate the effect of an intervention on an outcome within a second, possibly unrelated target population. The proposed methodologies can be extended to resolve data-fusion problems that seek to evaluate the effects of an intervention using data from two related studies sampled from different populations. A simulation study is conducted to demonstrate the advantages and similarities of the different techniques. We also test the performance of the calibration approach in a motivating real data example comparing whether the effect of biguanides versus sulfonylureas - the two most common oral diabetes medication classes for initial treatment - on all-cause mortality described in a historical cohort applies to a contemporary cohort of US Veterans with diabetes. △ Less

Submitted 7 July, 2022; v1 submitted 14 August, 2020; originally announced August 2020.

Transporting Experimental Results with Entropy Balancing

Authors: Kevin P. Josey, Seth A. Berkowitz, Debashis Ghosh, Sridharan Raghavan

Abstract: We show how entropy balancing can be used for transporting experimental treatment effects from a trial population onto a target population. This method is doubly-robust in the sense that if either the outcome model or the probability of trial participation is correctly specified, then the estimate of the target population average treatment effect is consistent. Furthermore, we only require the sam… ▽ More We show how entropy balancing can be used for transporting experimental treatment effects from a trial population onto a target population. This method is doubly-robust in the sense that if either the outcome model or the probability of trial participation is correctly specified, then the estimate of the target population average treatment effect is consistent. Furthermore, we only require the sample moments of the effect modifiers drawn from the target population to consistently estimate the target population average treatment effect. We compared the finite-sample performance of entropy balancing with several alternative methods for transporting treatment effects between populations. Entropy balancing techniques are efficient and robust to violations of model misspecification. We also examine the results of our proposed method in an applied analysis of the Action to Control Cardiovascular Risk in Diabetes Blood Pressure (ACCORD-BP) trial transported to a sample of US adults with diabetes taken from the National Health and Nutrition Examination Survey (NHANES) cohort. △ Less

Submitted 27 April, 2021; v1 submitted 18 February, 2020; originally announced February 2020.

Optical properties of mist CVD grown $α$-Ga$_2$O$_3$

Authors: Usman Ul Muazzam, Prasad chavan, Srinivasan Raghavan, R. Muralidharan, Digbijoy N Nath

Abstract: We report on the study of optical properties of mist CVD grown alpha Gallium oxide with the observation of excitonic absorption in spectral responsivity measurements. 163 nm of Gallium oxide was grown on sapphire using Gallium acetylacetonate as the starting solution at a substrate temperature of 450 deg C. The film was found to be crystalline and of alpha phase with an on axis full width at half… ▽ More We report on the study of optical properties of mist CVD grown alpha Gallium oxide with the observation of excitonic absorption in spectral responsivity measurements. 163 nm of Gallium oxide was grown on sapphire using Gallium acetylacetonate as the starting solution at a substrate temperature of 450 deg C. The film was found to be crystalline and of alpha phase with an on axis full width at half maximum of 92 arcsec as confirmed from X ray diffraction scans. The Taucs plot extracted from absorption spectroscopy exhibited two transitions in the UV regime at 5.3 eV and 5.6 eV, corresponding to excitonic absorption and direct band to band transition respectively. The binding energy of exciton was extracted to be 114 meV from spectral responsivity measurements. Further, metal semiconductor metal photodetectors with lateral inter digitated geometry were fabricated on the film. A sharp band edge was observed at 230 nm in the spectral response with peak responsivity of around 1 Amperes per Watt at a bias of 20 V. The UV to visible rejection ratio was found to be around 100 while the dark current was measured to be around 0.1 nA. △ Less

Submitted 30 July, 2019; originally announced July 2019.

MoS2 Field Effect Transistors based sensors for low concentration acetone detection

Authors: Sumant Sarkar, Alison Viegas, Srinivasa R. Raghavan

Abstract: The measurement of acetone in human breath, a known biomarker for diabetes, can act as an effective screening method for diabetes. While gas chromatography and mass spectroscopy based methods can detect gases in low concentration, they are costly, bulky, need complex sample preparation and are slow. Solid state devices such as Field Effect Transistors (FETs) can perform this faster and at a lower… ▽ More The measurement of acetone in human breath, a known biomarker for diabetes, can act as an effective screening method for diabetes. While gas chromatography and mass spectroscopy based methods can detect gases in low concentration, they are costly, bulky, need complex sample preparation and are slow. Solid state devices such as Field Effect Transistors (FETs) can perform this faster and at a lower cost. In this work, we present the results of acetone gas sensing by molybdenum disulfide (MoS2) based FETs. MoS2 channel was functionalized with polymethyl methacrylate (PMMA). When acetone molecules bind to PMMA, an electrostatic gating effect takes place and changes the electrical characteristics of the FET. More the number of acetone molecules that bind to the PMMA layer, the higher the shift in the drain current-voltage (Id-Vg) curve of the FET. This shift is modeled as a change in the threshold voltage of the FET. The Id-Vg curve was observed to shift downwards, as the acetone concentration increases. The limit of detection was observed to be 0.4 parts per million (ppm). This is the first sub-ppm concentration acetone detection at room temperature using a solid state device. △ Less

Submitted 8 March, 2019; originally announced June 2019.

Comments: Masters degree research

A non-invasive sub-surface electrical probe to encapsulated layers in van der Waals heterostructures

Authors: Mrityunjay Pandey, Radhika Soni, Avi Mathur, Srinivasan Raghavan, U. Chandni

Abstract: Van der Waals heterostructures formed by stacking different atomically thin layered materials have emerged as the sought-after device platform for electronic and optoelectronic applications. Determining the spatial extent of all the encapsulated components in such vertical stacks is key to optimal fabrication methods and improved device performance. Here we employ electrostatic force microscopy as… ▽ More Van der Waals heterostructures formed by stacking different atomically thin layered materials have emerged as the sought-after device platform for electronic and optoelectronic applications. Determining the spatial extent of all the encapsulated components in such vertical stacks is key to optimal fabrication methods and improved device performance. Here we employ electrostatic force microscopy as a fast and non-invasive microscopic probe that provides compelling images of two dimensional layers buried over 30 nm below the sample surface. We demonstrate the versatility of the technique by studying heterojunctions comprising graphene, hexagonal boron nitride and transition metal dichalcogenides. Work function of each constituent layer acts as a unique fingerprint during imaging, thereby providing important insights into the charge environment, disorder, structural imperfections and doping profile. The technique holds great potential for gaining a comprehensive understanding of the quality, flatness as well as local electrical properties of buried layers in a large class of nanoscale materials and vertical heterostructures. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Applied 12, 064032 (2019)

Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs

Authors: Ansh, Jeevesh Kumar, Gaurav Sheoran, Harsha B. Variar, Ravi K. Mishra, Hemanjaneyulu Kuruva, Adil Meersha, Abhishek Mishra, Srinivasan Raghavan, Mayank Shrivastava

Abstract: Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Injection of charge carriers across such interfaces is mostly limited by Schottky barrier at the contacts which must be reduced to achieve highly efficient contacts for carrier injection into the channel. Here we introduce a u… ▽ More Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Injection of charge carriers across such interfaces is mostly limited by Schottky barrier at the contacts which must be reduced to achieve highly efficient contacts for carrier injection into the channel. Here we introduce a universal approach involving dry chemistry to enhance atomic orbital interaction between various TMDs (MoS2, WS2, MoSe2 and WSe2) & metal contacts has been experimentally demonstrated. Quantum chemistry between TMDs, Chalcogens and metals has been explored using detailed atomistic (DFT & NEGF) simulations, which is then verified using Raman, PL and XPS investigations. Atomistic investigations revealed lower contact resistance due to enhanced orbital interaction and unique physics of charge sharing between constituent atoms in TMDs with introduced Chalcogen atoms which is subsequently validated through experiments. Besides contact engineering, which lowered contact resistance by 72, 86, 1.8, 13 times in MoS2, WS2, MoSe2 and WSe2 respectively, a novel approach to cure / passivate dangling bonds present at the 2D TMD channel surface has been demonstrated. While the contact engineering improved the ON-state performance (ION, gm, mobility and RON) of 2D TMD FETs by orders of magnitude, Chalcogen based channel passivation was found to improve gate control (IOFF, SS, & VTH) significantly. This resulted in an overall performance boost. The engineered TMD FETs were shown to have performance on par with best reported till date. △ Less

Submitted 7 January, 2019; originally announced January 2019.

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

Authors: Ansh, Jeevesh Kumar, Ravi K Mishra, Srinivasan Raghavan, Mayank Shrivastava

Abstract: Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, steep sub-threshold swing and high carrier mobility offered by 2D FET channels, process related challenges like lack of selective doping techniques like implantation and CMOS compatible process for fabrication of 2D TMD b… ▽ More Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, steep sub-threshold swing and high carrier mobility offered by 2D FET channels, process related challenges like lack of selective doping techniques like implantation and CMOS compatible process for fabrication of 2D TMD based FETs hinder the anticipated viability of 2D semiconductor technology for future electronic applications. In this letter, we demonstrate a process oriented approach to realize superior ambipolarity in 2D FETs based on TMDs like Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum diselenide (MoSe2) and Tungsten diselenide (WSe2) by enhancing hole current by multiple orders of magnitude in otherwise strong N-type transistors. The method involves Hydrogen Sulfide (H2S gas) assisted contact engineering of N-type FETs to introduce surface states that alter device behavior. Based on material characterization and bandstructure calculations, physical insights have been developed to understand the effect of such a contact engineering technique. Subsequently, this technique has been demonstrated to alter device behavior by enhancing hole conduction in originally N-type exfoliated (MoS2, WS2, MoSe2 and WSe2) and CVD grown (MoS2) TMD samples to confirm its potential towards enabling the feasibility of 2D semiconductor device technology. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

Authors: Ansh, J Kumar, R K Mishra, S Raghavan, Mayank Shrivastava

Abstract: One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs with comparable n-type and p-type behavior. Here we demonstrate a Chalcogen based technique to alter the surface of WSe2 to realize enhanced ambipolar behavior along with a complete transition from n to p-type behavior of… ▽ More One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs with comparable n-type and p-type behavior. Here we demonstrate a Chalcogen based technique to alter the surface of WSe2 to realize enhanced ambipolar behavior along with a complete transition from n to p-type behavior of WSe2 FETs. The technique involves dry chemistry between Chalcogen atom and TMDC surface which leads to surface states that cause improved hole and electron injection through the FETs. We propose such a technique for realization of all WSe2 based CMOS integrated circuits and therefore unveil its potential towards technology. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Multi-layer MoS2/GaN UV-Visible photodetector with observation of MoS2 band edge in spectral responsivity

Authors: Swanand Solanke, Shashwat Rathakanthiwar, 1Anisha Kalra, Muralidharan Rangarajan, Srinivasan Raghavan, Digbijoy N. Nath

Abstract: We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge in spectral responsivity. Multi-layer MoS2 flakes of thickness ~ 200 nm were exfoliated on epitaxial GaN-on-sapphire, followed by fabrication of detectors in a lateral Metal-Semiconductor-Metal (MSM) geometry with Ni/Au… ▽ More We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge in spectral responsivity. Multi-layer MoS2 flakes of thickness ~ 200 nm were exfoliated on epitaxial GaN-on-sapphire, followed by fabrication of detectors in a lateral Metal-Semiconductor-Metal (MSM) geometry with Ni/Au contacts which were insulated from the GaN layer underneath by Al2O3 dielectric. Devices exhibited distinct steps in spectral responsivity at 365 nm and at ~ 685 nm with a corresponding photo-to-dark current ratio of ~4000 and ~ 100 respectively. Responsivity of 0.1 A/W (at 10 V) was measured at 365 nm corresponding to GaN band edge, while the second band edge at ~ 685 nm is characterized by a spectral responsivity (SR) of ~ 33 A/W when accounted for the flake size, corresponding to the direct band gap at K point of multi-layer MoS2. △ Less

Submitted 29 March, 2018; originally announced March 2018.

Comments: 15 Pages, * figures

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Authors: Hareesh Chandrasekar, K N Bhat, Muralidharan Rangarajan, Srinivasan Raghavan, Navakanta Bhat

Abstract: The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are however, not well understood. We report on a pronounced thickness dependence of the parasitic channel… ▽ More The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are however, not well understood. We report on a pronounced thickness dependence of the parasitic channel formation at AlN/Si interfaces due to increased surface acceptor densities at the interface in silicon. The origin of these surface acceptors is analyzed using secondary ion mass spectroscopy measurements and traced to thermal acceptor formation due to Si-O-N complexes. Low-temperature (5K) magneto-resistance (MR) data reveals a transition from positive to negative MR with increasing AlN film thickness indicating the presence of an inversion layer of electrons which also contributes to parasitic channel formation but whose contribution is secondary at room temperatures. △ Less

Submitted 9 November, 2017; originally announced November 2017.

Comments: 23 pages, 7 figures

Journal ref: Scientific Reports 7, Article number: 15749 (2017)

Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

Authors: Piyush Jaiswal, Usman Ul Muazzam, Anamika Singh Pratiyush, Nagaboopathy Mohan, Srinivasan Raghavan, R. Muralidharan, S. A. Shivashankar, Digbijoy N. Nath

Abstract: We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based heterostructure as the substrate. The film deposited in the solution medium, at less than 200 C, using a metalorganic precursor, was nanocrystalline. XRD confirms that as d… ▽ More We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based heterostructure as the substrate. The film deposited in the solution medium, at less than 200 C, using a metalorganic precursor, was nanocrystalline. XRD confirms that as deposited film when annealed at high temperature turns polycrystalline beta gallium oxide. SEM shows the as deposited film to be uniform, with a surface roughness of 4 to 5 nm, as revealed by AFM. Interdigitated metal semiconductor metal MSM devices with Ni,Au contact exhibited peak spectral response at 230 nm and a good visible rejection ratio. This first demonstration of a deep-UV detector on beta-gallium oxide on III nitride stack is expected to open up new possibilities of functional and physical integration of beta gallium oxide and GaN material families towards enabling next generation high performance devices by exciting band and heterostructure engineering. △ Less

Submitted 15 November, 2017; v1 submitted 26 October, 2017; originally announced October 2017.

Comments: Main manuscript 5 pages, 4 figures Supplementary information 2 pages, 2 figures

Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon

Authors: Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi, Shreesha Prabhu, Surani Bin Dolmanan, Sudhiranjan Tripathy, Srinivasan Raghavan, K. N. Bhat, Sangeneni Mohan, R. Muralidharan, Navakanta Bhat, Digbijoy N. Nath

Abstract: We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conduction band offset of 1.9 eV is extracted for HfO2/GaN along with a very low density of fixed bulk and interfacial charges. Conductance measurements on HfO2/GaN MOSC… ▽ More We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conduction band offset of 1.9 eV is extracted for HfO2/GaN along with a very low density of fixed bulk and interfacial charges. Conductance measurements on HfO2/GaN MOSCAPs reveal an interface trap state continuum with a density of 9.37x1012 eV-1cm-2 centered at 0.48 eV below EC. The forward and reverse current densities are shown to be governed by Fowler-Nordheim tunneling and Poole-Frenkel emission respectively. Normally-ON HfO2/AlGaN/GaN MISHEMTs exhibit negligible shifts in threshold voltage, transconductances of 110mS/mm for 3 μm gate length devices, and three-terminal OFF-state gate leakage currents of 20 nA/mm at a VD of 100 V. Dynamic capacitance dispersion measurements show two peaks at the AlGaN/GaN interface corresponding to slow and fast interface traps with a peak Dit of 5.5x1013 eV-1cm-2 and 1.5x1013 eV-1cm-2 at trap levels 0.55 eV and 0.46 eV below EC respectively. The HfO2/AlGaN interface exhibits a peak Dit of 4.4x1013 eV-1cm- 2 at 0.45 eV below EC. △ Less

Submitted 12 August, 2017; originally announced August 2017.

Comments: 6 pages, 10 figures

An Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si

Authors: Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan, KN Bhat, Navakanta Bhat, N Ravishankar, Srinivasan Raghavan

Abstract: The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus >1 GPa) and fail-safe i… ▽ More The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus >1 GPa) and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface and crystal quality. △ Less

Submitted 12 August, 2017; originally announced August 2017.

Comments: 18 pages, 6 figures

Journal ref: Appl. Phys. Lett. 103, 211902 (2013)

Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs

Authors: Amit Verma, Kazuki Nomoto, Wan Sik Hwang, Santosh Raghavan, Susanne Stemmer, Debdeep Jena

Abstract: Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures.… ▽ More Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60nm SrTiO3/5nm SmTiO3 thin films grown by hybrid molecular beam epitaxy (hMBE). We find that the FinFETs exhibit higher gate capacitance compared to planar FETs. By scaling down the SrTiO3/SmTiO3 fin widths, we demonstrate further gate capacitance enhancement, almost twice compared to the planar FETs. In the FinFETs with narrowest fin-widths, we demonstrate a record 2DEG electron concentration modulation of ~2.4 x 1014 cm-2. △ Less

Submitted 5 May, 2016; originally announced May 2016.

Journal ref: Appl. Phys. Lett. 108, 183509 (2016)

Inferring Uncertain Trajectories from Partial Observations

Authors: Prithu Banerjee, Sayan Ranu, Sriram Raghavan

Abstract: The explosion in the availability of GPS-enabled devices has resulted in an abundance of trajectory data. In reality, however, majority of these trajectories are collected at a low sampling rate and only provide partial observations on their actually traversed routes. Consequently, they are mired with uncertainty. In this paper, we develop a technique called InferTra to infer uncertain trajectorie… ▽ More The explosion in the availability of GPS-enabled devices has resulted in an abundance of trajectory data. In reality, however, majority of these trajectories are collected at a low sampling rate and only provide partial observations on their actually traversed routes. Consequently, they are mired with uncertainty. In this paper, we develop a technique called InferTra to infer uncertain trajectories from network-constrained partial observations. Rather than predicting the most likely route, the inferred uncertain trajectory takes the form of an edge-weighted graph and summarizes all probable routes in a holistic manner. For trajectory inference, InferTra employs Gibbs sampling by learning a Network Mobility Model (NMM) from a database of historical trajectories. Extensive experiments on real trajectory databases show that the graph-based approach of InferTra is up to 50% more accurate, 20 times faster, and immensely more versatile than state-of-the-art techniques. △ Less

Submitted 24 March, 2016; originally announced March 2016.

Making Consistent Contacts to Graphene: Effect of Architecture and Growth Induced Defects

Authors: Krishna Bharadwaj B, Rudra Pratap, Srinivasan Raghavan

Abstract: The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to yield resistivities that are lower, by a factor of 4, and most consistent as compared to metal on top of graphene. Growth defects in graphene film were found to… ▽ More The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to yield resistivities that are lower, by a factor of 4, and most consistent as compared to metal on top of graphene. Growth defects in graphene film were found to further reduce resistivity by a factor of 2. Using a combination of method and metal used, the contact resistivity of graphene has been decreased by a factor of 10 to 1200 +- 250 Ohm-um using Palladium as the contact metal. While the improved consistency is due to the metal being able to contact uncontaminanted graphene in the metal on the bottom architecture, lower contact resistivities observed on defective graphene with the same metal is attributed to the increased number of modes of quantum transport in the channel. △ Less

Submitted 4 January, 2016; originally announced January 2016.

Bright-field Nanoscopy: Visualizing Nano-structures with Localized Optical Contrast Using a Conventional Microscope

Authors: Swathi Suran, Krishna Bharadwaj, Srinivasan Raghavan, Manoj M. Varma

Abstract: Most methods for optical visualization beyond the diffraction limit rely on fluorescence emission by molecular tags. Here, we report a method for visualization of nanostructures down to a few nanometers using a conventional bright-field microscope without requiring additional molecular tags such as fluorophores. The technique, Bright-field Nanoscopy, is based on the strong thickness dependent colo… ▽ More Most methods for optical visualization beyond the diffraction limit rely on fluorescence emission by molecular tags. Here, we report a method for visualization of nanostructures down to a few nanometers using a conventional bright-field microscope without requiring additional molecular tags such as fluorophores. The technique, Bright-field Nanoscopy, is based on the strong thickness dependent color of ultra-thin germanium on an optically thick gold film. We demonstrate the visualization of grain boundaries in chemical vapour deposited single layer graphene and the detection of single 40 nm Ag nanoparticles. We estimate a size detection limit of about 2 nm using this technique. In addition to visualizing nano-structures, this technique can be used to probe fluid phenomena at the nanoscale, such as transport through 2D membranes. We estimated the water transport rate through a 1 nm thick polymer film using this technique, as an illustration. Further, the technique can also be extended to study the transport of specific ions in the solution. It is anticipated that this technique will find use in applications ranging from single-nanoparticles resolved sensing to studying nanoscale fluid-solid interface phenomena. △ Less

Submitted 28 December, 2015; originally announced December 2015.

Carrier density independent scattering rate in SrTiO3-based electron liquids

Authors: Evgeny Mikheev, Santosh Raghavan, Jack Y. Zhang, Patrick B. Marshall, Adam P. Kajdos, Leon Balents, Susanne Stemmer

Abstract: We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T^n (T is the temperature and n <= 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations f… ▽ More We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T^n (T is the temperature and n <= 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (E_F). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n < 2). This includes the cuprates and other transition metal oxide perovskites, where strikingly similar density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory. △ Less

Submitted 7 December, 2015; originally announced December 2015.

Journal ref: Scientific Reports 6, 20865 (2016)

Ferroelectric Transition in Compressively Strained SrTiO3 Thin Films

Authors: Amit Verma, Santosh Raghavan, Susanne Stemmer, Debdeep Jena

Abstract: We report the temperature dependent capacitance-voltage characteristics of Pt/SrTiO3 Schottky diodes fabricated using compressively strained SrTiO3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. The measurements reveal a divergence of the out of plane dielectric constant of SrTiO3 peaked at ~140K, implying a ferroelectric transition. A Curie-Weiss law fit to the zero-bias dielect… ▽ More We report the temperature dependent capacitance-voltage characteristics of Pt/SrTiO3 Schottky diodes fabricated using compressively strained SrTiO3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. The measurements reveal a divergence of the out of plane dielectric constant of SrTiO3 peaked at ~140K, implying a ferroelectric transition. A Curie-Weiss law fit to the zero-bias dielectric constant suggests a Curie temperature of ~56 K. This observation provides experimental confirmation of the theoretical prediction of out of plane ferroelectricity in compressively strained SrTiO3 thin films grown on LSAT substrate. We also discuss the roles of the field-dependent dielectric constant and the interfacial layer in SrTiO3 on the extraction of the Curie temperature. △ Less

Submitted 6 November, 2015; originally announced November 2015.

Comments: Accepted for publication in Applied Physics Letters

Estimation of background carrier concentration in fully depleted GaN films

Authors: Hareesh Chandrasekar, Manikant Singh, Srinivasan Raghavan, Navakanta Bhat

Abstract: Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN HEMTs and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier concentration in such buffers using conventional capacitance based profiling techniques is challenging due to their fully depleted nature even at zero bias voltages. We provide a simple and effective model to extract carr… ▽ More Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN HEMTs and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier concentration in such buffers using conventional capacitance based profiling techniques is challenging due to their fully depleted nature even at zero bias voltages. We provide a simple and effective model to extract carrier concentrations in fully depleted GaN films using capacitance-voltage (C-V) measurements. Extensive mercury probe C-V profiling has been performed on GaN films of differing thicknesses and doping levels in order to validate this model. Carrier concentrations as extracted from both the conventional C-V technique for partially depleted films having the same doping concentration, and Hall measurements show excellent agreement with those predicted by the proposed model thus establishing the utility of this technique. This model can be readily extended to estimate background carrier concentrations from the depletion region capacitances of HEMT structures and fully depleted films of any class of semiconductor materials. △ Less

Submitted 19 October, 2015; v1 submitted 24 June, 2015; originally announced June 2015.

Comments: 16 pages, 6 figures

Journal ref: Semicond. Sci. Technol. 30 (2015) 115018

Growth Stress Induced Tunability of Dielectric Constant in Thin Films

Authors: K. V. L. V. Narayanachari, Hareesh Chandrasekar, Amiya Banerjee, K. B. R. Varma, Rajeev Ranjan, Navakanta Bhat, Srinivasan Raghavan

Abstract: It is demonstrated here that growth stress has a substantial effect on the dielectric constant of zirconia thin films. The correct combination of parameters - phase, texture and stress - is shown to yield films with high dielectric constant and best reported equivalent oxide thickness of 0.8 nm. The stress effect on dielectric constant is twofold, firstly, by the effect on phase transitions and se… ▽ More It is demonstrated here that growth stress has a substantial effect on the dielectric constant of zirconia thin films. The correct combination of parameters - phase, texture and stress - is shown to yield films with high dielectric constant and best reported equivalent oxide thickness of 0.8 nm. The stress effect on dielectric constant is twofold, firstly, by the effect on phase transitions and secondly by the effect on interatomic distances. We discuss and explain the physical mechanisms involved in the interplay between the stress, phase changes and the dielectric constant in detail. △ Less

Submitted 28 March, 2015; originally announced March 2015.

Comments: 11 pages, 5 figures