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HBN-encapsulated, graphene-based room-temperature terahertz receivers with high speed and low noise
Authors:
Leonardo Viti,
David G. Purdie,
Antonio Lombardo,
Andrea C. Ferrari,
Miriam S. Vitiello
Abstract:
Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide…
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Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}μm^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $\leq$ 160 $pWHz^{-1/2}$), fast response time ($\leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date.
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Submitted 21 April, 2020;
originally announced April 2020.
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High-mobility, wet-transferred graphene grown by chemical vapor deposition
Authors:
D. De Fazio,
D. G. Purdie,
A. K. Ott,
P. Braeuninger-Weimer,
T. Khodkov,
S. Goossens,
T. Taniguchi,
K. Watanabe,
P. Livreri,
F. H. L. Koppens,
S. Hofmann,
I. Goykhman,
A. C. Ferrari,
A. Lombardo
Abstract:
We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. Th…
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We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
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Submitted 5 April, 2019; v1 submitted 2 April, 2019;
originally announced April 2019.
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A peeling approach for integrated manufacturing of large mono-layer h-BN crystals
Authors:
Ruizhi Wang,
David G. Purdie,
Ye Fang,
Fabien Massabuau,
Philipp Braeuninger-Weimer,
Oliver J. Burton,
Raoul Blume,
Robert Schloegl,
Antonio Lombardo,
Robert S. Weatherup,
Stephan Hofmann
Abstract:
Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk…
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Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. Here, we address this integration challenge for mono-layer h-BN via a chemical vapour deposition process that enables crystal sizes exceeding 0.5 mm starting from commercial, reusable platinum foils, and in unison allows a delamination process for easy and clean layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. Our process development builds on a systematic understanding of the underlying mechanisms. The approach can be readily combined with other layered materials and opens a scalable route to h-BN layer integration and reliable 2D material device layer stacks.
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Submitted 30 July, 2018;
originally announced July 2018.
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Cleaning Interfaces in Layered Materials Heterostructures
Authors:
D. G. Purdie,
N. M. Pugno,
T. Taniguchi,
K. Watanabe,
A. C. Ferrari,
A. Lombardo
Abstract:
Heterostructures formed by stacking layered materials require atomically clean interfaces. However, contaminants are usually trapped between the layers, aggregating into blisters. We report a process to remove such blisters, resulting in clean interfaces. We fabricate blister-free regions of graphene encapsulated in hexagonal boron nitride of$\sim$5000$μ$m$^{2}$, limited only by the size of the ex…
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Heterostructures formed by stacking layered materials require atomically clean interfaces. However, contaminants are usually trapped between the layers, aggregating into blisters. We report a process to remove such blisters, resulting in clean interfaces. We fabricate blister-free regions of graphene encapsulated in hexagonal boron nitride of$\sim$5000$μ$m$^{2}$, limited only by the size of the exfoliated flakes. These have mobilities up to$\sim$180000cm$^2$V$^{-1}$s$^{-1}$ at room temperature, and$\sim$1.8$\times$10$^6$cm$^2$V$^{-1}$s$^{-1}$ at 9K. We further demonstrate the effectiveness of our approach by cleaning heterostructures assembled using graphene intentionally exposed to polymers and solvents. After cleaning, these samples reach similar high mobilities. We also showcase the general applicability of our approach to layered materials by cleaning blisters in other heterostructures based on MoS$_{2}$. This demonstrates that exposure of graphene to processing-related contaminants is compatible with the realization of high mobility samples, paving the way to the development of fab-based processes for the integration of layered materials in (opto)-electronic devices.
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Submitted 2 March, 2018;
originally announced March 2018.
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Broadband, electrically tuneable, third harmonic generation in graphene
Authors:
G. Soavi,
G. Wang,
H. Rostami,
D. Purdie,
D. De Fazio,
T. Ma,
B. Luo,
J. Wang,
A. K. Ott,
D. Yoon,
S. Bourelle,
J. E. Muench,
I. Goykhman,
S. Dal Conte,
M. Celebrano,
A. Tomadin,
M. Polini,
G. Cerullo,
A. C. Ferrari
Abstract:
Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong-light matter interaction and electrically and broadband tunable third order nonlinear susceptibility. Here we s…
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Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong-light matter interaction and electrically and broadband tunable third order nonlinear susceptibility. Here we show that the third harmonic generation efficiency in graphene can be tuned by over two orders of magnitude by controlling the Fermi energy and the incident photon energy. This is due to logarithmic resonances in the imaginary part of the nonlinear conductivity arising from multi-photon transitions. Thanks to the linear dispersion of the massless Dirac fermions, ultrabroadband electrical tunability can be achieved, paving the way to electrically-tuneable broadband frequency converters for applications in optical communications and signal processing.
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Submitted 6 October, 2017;
originally announced October 2017.
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Out-of-plane heat transfer in van der Waals stacks: electron-hyperbolic phonon coupling
Authors:
K. J. Tielrooij,
N. C. H. Hesp,
A. Principi,
M. Lundeberg,
E. A. A. Pogna,
L. Banszerus,
Z. Mics,
M. Massicotte,
P. Schmidt,
D. Davydovskaya,
D. G. Purdie,
I. Goykhman,
G. Soavi,
A. Lombardo,
K. Watanabe,
T. Taniguchi,
M. Bonn,
D. Turchinovich,
C. Stampfer,
A. C. Ferrari,
G. Cerullo,
M. Polini,
F. H. L. Koppens
Abstract:
Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting require a thorough understanding of (nanoscale) heat flow. Here, using…
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Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting require a thorough understanding of (nanoscale) heat flow. Here, using time-resolved photocurrent measurements we identify an efficient out-of-plane energy transfer channel, where charge carriers in graphene couple to hyperbolic phonon polaritons in the encapsulating layered material. This hyperbolic cooling is particularly efficient, giving picosecond cooling times, for hexagonal BN, where the high-momentum hyperbolic phonon polaritons enable efficient near-field energy transfer. We study this heat transfer mechanism through distinct control knobs to vary carrier density and lattice temperature, and find excellent agreement with theory without any adjustable parameters. These insights may lead to the ability to control heat flow in van der Waals heterostructures.
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Submitted 4 December, 2017; v1 submitted 13 February, 2017;
originally announced February 2017.
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Few-cycle pulses from a graphene mode-locked all-fiber laser
Authors:
D. Purdie,
D. Popa,
V. J. Wittwer,
Z. Jiang,
G. Bonacchini,
F. Torrisi,
S. Milana,
E. Lidorikis,
A. C. Ferrari
Abstract:
We combine a graphene mode-locked oscillator with an external compressor and achieve~29fs pulses with~52mW average power. This is a simple, low-cost, and robust setup, entirely fiber based, with no free-space optics, for applications requiring high temporal resolution.
We combine a graphene mode-locked oscillator with an external compressor and achieve~29fs pulses with~52mW average power. This is a simple, low-cost, and robust setup, entirely fiber based, with no free-space optics, for applications requiring high temporal resolution.
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Submitted 7 April, 2015;
originally announced April 2015.