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Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon
Authors:
Christopher Pashartis,
Michiel J. van Setten,
Geoffrey Pourtois
Abstract:
The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material properties and leads to desired or undesired effects, especially in the active part of the transistor, its channel. Measuring, understanding, and, ultimately, contr…
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The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material properties and leads to desired or undesired effects, especially in the active part of the transistor, its channel. Measuring, understanding, and, ultimately, controlling the stress fields is hence crucial for many design steps.The level of stress can in principle be measured by micro-Raman spectroscopy. This, however, requires \emph{a priori} knowledge of the mechanical properties of the material. The mechanical properties start to deviate from the bulk values when film dimensions become thinner than 5 nm. If this effect is ignored, errors of up to 400\% can be introduced in the extracted stress profile. In this work, we illustrate this effect for a range of Si (001) slabs with different silicon film thickness, ranging from 5 to 0.7 nm and provide best practices for the proper interpretation of micro-Raman stress measurements.
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Submitted 24 September, 2024;
originally announced September 2024.
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Selecting Alternative Metals for Advanced Interconnects
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Benoit Van Troeye,
Alicja Leśniewska,
Olalla Varela Pedreira,
Herman Oprins,
Gilles Delie,
Claudia Fleischmann,
Lizzie Boakes,
Cédric Rolin,
Lars-Åke Ragnarsson,
Kristof Croes,
Seongho Park,
Johan Swerts,
Geoffrey Pourtois,
Zsolt Tőkei,
Christoph Adelmann
Abstract:
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions…
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Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions approach the 10 nm scale, the limitations of conventional Cu dual-damascene metallization are becoming increasingly difficult to overcome, spurring over a decade of focused research into alternative metallization schemes. The selection of alternative metals is a highly complex process, requiring consideration of multiple criteria, including resistivity at reduced dimensions, reliability, thermal performance, process technology readiness, and sustainability. This tutorial introduces the fundamental criteria for benchmarking and selecting alternative metals and reviews the current state of the art in this field. It covers materials nearing adoption in high-volume manufacturing, materials currently under active research, and potential future directions for fundamental study. While early alternatives to Cu metallization have recently been introduced in commercial CMOS devices, the search for the optimal interconnect metal remains ongoing.
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Submitted 1 October, 2024; v1 submitted 13 June, 2024;
originally announced June 2024.
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Computing Elastic Tensors of Amorphous Materials from First-Principles
Authors:
C. Pashartis,
M. J. van Setten,
M. Houssa,
G. Pourtois
Abstract:
Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their physical capabilities. The mechanical properties of these thin layers are critical in determining both the operational efficacy and mechanical integrity of these devices. Unlike bulk crystalline materials, whose calculat…
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Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their physical capabilities. The mechanical properties of these thin layers are critical in determining both the operational efficacy and mechanical integrity of these devices. Unlike bulk crystalline materials, whose calculation techniques are well-established, amorphous materials present a challenge due to the significant variation in atomic topology and their non-affine transformations under external strain. This study introduces a novel method for computing the elastic tensor of amorphous materials, applicable to both bulk and ultra-thin films in the linear elastic regime using Density Functional Theory. We exemplify this method with a-SiO2, a commonly used dielectric. Our approach accounts for the structural disorder inherent in amorphous systems, which, while contributing to remarkable material properties, complicates traditional elastic tensor computation. We propose a solution involving the inability of atomic positions to relax under internal relaxation, near the boundaries of the computational unit cell, ensuring the affine transformations necessary for linear elasticity. This method's efficacy is demonstrated through its alignment with classical Young's modulus measurements, and has potential for broad application in fields such as Technology Computer Aided Design and stress analysis via Raman spectra. The revised technique for assessing the mechanical properties of amorphous materials opens new avenues for exploring their impact on device reliability and functionality.
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Submitted 30 May, 2024;
originally announced May 2024.
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Cu$_x$Al$_{1-x}$ films as Alternatives to Copper for Advanced Interconnect Metallization
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Geoffrey Pourtois,
Johan Swerts,
Zsolt Tőkei,
Christoph Adelmann
Abstract:
Cu$_x$Al$_{1-x}$ thin films with $0.2 \le x \le 0.7$ have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu$_x$Al$_{1-x}$ electronic structure and cohesive energy to benchmark different intermetallics and their prospects for interconnect metallization. Next, thin Cu$_x$Al$_{1-x}$ films were deposited by P…
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Cu$_x$Al$_{1-x}$ thin films with $0.2 \le x \le 0.7$ have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu$_x$Al$_{1-x}$ electronic structure and cohesive energy to benchmark different intermetallics and their prospects for interconnect metallization. Next, thin Cu$_x$Al$_{1-x}$ films were deposited by PVD with thicknesses in the range between 3 and 28 nm. The lowest resistivities of 9.5 $μΩ$cm were obtained for 28 nm thick stochiometric CuAl and CuAl$_2$ after 400$^\circ$C post-deposition annealing. Based on the experimental results, we discuss the main challenges for the studied aluminides from an interconnect point of view, namely the control of the film stoichiometry, the phase separation observed for off-stoichiometric CuAl and CuAl$_2$, as well as the presence of a nonstoichiometric surface oxide.
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Submitted 3 May, 2024;
originally announced May 2024.
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Al$_3$Sc thin films for advanced interconnect applications
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Valeria Founta,
Karl Opsomer,
Christophe Detavernier,
Joris Van de Vondel,
Geoffrey Pourtois,
Zsolt Tőkei,
Johan Swerts,
Christoph Adelmann
Abstract:
Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190°C, followed by recrystallization at 440°C. After annealing at 500°C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $μΩ$cm, limited by a combination of grain…
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Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190°C, followed by recrystallization at 440°C. After annealing at 500°C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $μΩ$cm, limited by a combination of grain boundary and point defect (disorder) scattering. Together with ab initio calculations that found a mean free path of the charge carriers of 7 nm for stoichiometric Al$_3$Sc, these results indicate that Al$_3$Sc bears promise for future interconnect metallization schemes. Challenges remain in minimizing the formation of secondary phases as well as in the control of the non-stoichiometric surface oxidation and interfacial reactions with underlying dielectrics.
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Submitted 23 January, 2024; v1 submitted 31 October, 2023;
originally announced October 2023.
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Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Authors:
Riccardo Torsi,
Kyle T. Munson,
Rahul Pendurthi,
Esteban A. Marques,
Benoit Van Troeye,
Lysander Huberich,
Bruno Schuler,
Maxwell A. Feidler,
Ke Wang,
Geoffrey Pourtois,
Saptarshi Das,
John B. Asbury,
Yu-Chuan Lin,
Joshua A. Robinson
Abstract:
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisi…
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Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10x. Ab initio models indicate the free-energy of sulfur-vacancy formation is increased along the MoS2 growth-front when Re is introduced, resulting in an improved stoichiometry. Remarkably, defect photoluminescence (PL) commonly seen in as-grown MOCVD MoS2 is suppressed by 6x at 0.05 atomic percent (at.%) Re and completely quenched with 1 at.% Re. Furthermore, Re-MoS2 transistors exhibit up to 8x higher drain current and enhanced mobility compared to undoped MoS2 because of the improved material quality. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
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Submitted 31 January, 2023;
originally announced February 2023.
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Modeling X-ray Photoelectron Spectroscopy of Macromolecules Using GW
Authors:
Laura Galleni,
Faegheh S. Sajjadian,
Thierry Conard,
Daniel Escudero,
Geoffrey Pourtois,
Michiel J. van Setten
Abstract:
We propose a simple additive approach to simulate X-ray photoelectron spectra (XPS) of macromolecules based on the $GW$ method. Single-shot $GW$ ($G_0W_0$) is a promising technique to compute accurate core-electron binding energies (BEs). However, its application to large molecules is still unfeasible. To circumvent the computational cost of $G_0W_0$, we break the macromolecule into tractable buil…
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We propose a simple additive approach to simulate X-ray photoelectron spectra (XPS) of macromolecules based on the $GW$ method. Single-shot $GW$ ($G_0W_0$) is a promising technique to compute accurate core-electron binding energies (BEs). However, its application to large molecules is still unfeasible. To circumvent the computational cost of $G_0W_0$, we break the macromolecule into tractable building blocks, such as isolated monomers, and sum up the theoretical spectra of each component, weighted by their molar ratio. In this work, we provide a first proof of concept by applying the method to four test polymers and one copolymer, and show that it leads to an excellent agreement with experiments. The method could be used to retrieve the composition of unknown materials and study chemical reactions, by comparing the simulated spectra with experimental ones.
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Submitted 12 September, 2022;
originally announced September 2022.
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Hole-doping induced ferromagnetism in 2D materials
Authors:
R. Meng,
L. M. C. Pereira,
J. P. Locquet,
V. V. Afanas'ev,
G. Pourtois,
M. Houssa
Abstract:
Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequ…
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Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are performed in order to screen 2D materials that present a non-magnetic to a ferromagnetic transition upon hole doping. A global evolutionary search is subsequently performed, in order to identify alternative possible atomic structures of the eligible candidates, and 122 materials exhibiting a hole-doping induced ferromagnetism are identified. Their energetic and dynamic stability, as well as their magnetic properties under hole doping are investigated systematically. Half of these 2D materials are metal halides, followed by chalcogenides, oxides and nitrides, some of them having predicted Curie temperatures above 300 K. The exchange interactions responsible for the ferromagnetic order in these 2D materials are also discussed. This work not only provides theoretical insights into hole-doped 2D ferromagnetic materials, but also enriches the family of 2D magnetic materials for possible spintronic applications.
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Submitted 5 April, 2022; v1 submitted 4 April, 2022;
originally announced April 2022.
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First-principles-based screening method for resistivity scaling of anisotropic metals
Authors:
Kristof Moors,
Kiroubanand Sankaran,
Geoffrey Pourtois,
Christoph Adelmann
Abstract:
The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconnects in nanoelectronic devices that affects signal delay, heat production, and energy consumption. Here, we generalize a commonly considered figure of merit for selecting promising candidate metals with highly anisotropic Fermi surfaces in terms of their electronic transport properties at the nanosca…
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The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconnects in nanoelectronic devices that affects signal delay, heat production, and energy consumption. Here, we generalize a commonly considered figure of merit for selecting promising candidate metals with highly anisotropic Fermi surfaces in terms of their electronic transport properties at the nanoscale. For this, we introduce a finite-temperature transport tensor, based on band structures obtained from first principles. This transport tensor allows for a straightforward comparison between highly anisotropic metals in nanostructures with different lattice orientations and arbitrary transport directions. By evaluating the temperature dependence of the tensor components, we also assess the validity of a Fermi surface-based evaluation of the transport properties at zero temperature, rather than considering standard operating temperature conditions.
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Submitted 27 December, 2022; v1 submitted 22 November, 2021;
originally announced November 2021.
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Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Authors:
Kiroubanand Sankaran,
Kristof Moors,
Zsolt Tőkei,
Christoph Adelmann,
Geoffrey Pourtois
Abstract:
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density functional theory. The resistivity scaling potential of these compounds, i.e. the sensitivity of their resistivity to reduced line dimensions, has been benchmarked…
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The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density functional theory. The resistivity scaling potential of these compounds, i.e. the sensitivity of their resistivity to reduced line dimensions, has been benchmarked against Cu and Ru by evaluating their transport properties within a semiclassical transport formalism. In addition, their cohesive energy has been assessed as a proxy for the resistance against electromigration and the need for diffusion barriers. The results indicate that numerous MAX phases show promise as conductors in interconnects of advanced CMOS technology nodes.
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Submitted 16 September, 2021; v1 submitted 13 November, 2020;
originally announced November 2020.
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Resistivity scaling model for metals with conduction band anisotropy
Authors:
Miguel De Clercq,
Kristof Moors,
Kiroubanand Sankaran,
Geoffrey Pourtois,
Shibesh Dutta,
Christoph Adelmann,
Wim Magnus,
Bart Sorée
Abstract:
It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several experiments and ab initio simulations have demonstrated the impact of crystal orientation on resistivity scaling. The crystal orientation cannot be captured by the commonly used resistivity scaling models and a qualitative un…
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It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several experiments and ab initio simulations have demonstrated the impact of crystal orientation on resistivity scaling. The crystal orientation cannot be captured by the commonly used resistivity scaling models and a qualitative understanding of its impact is currently lacking. In this work, we derive a resistivity scaling model that captures grain boundary and boundary surface scattering as well as the anisotropy of the band structure. The model is applied to Cu and Ru thin films, whose conduction bands are (quasi-)isotropic and anisotropic respectively. After calibrating the anisotropy with ab initio simulations, the resistivity scaling models are compared to experimental resistivity data and a renormalization of the fitted grain boundary reflection coefficient can be identified for textured Ru.
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Submitted 7 March, 2018; v1 submitted 2 November, 2017;
originally announced November 2017.
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Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
Authors:
Albert de Jamblinne de Meux,
Geoffrey Pourtois,
Jan Genoe,
Paul Heremans
Abstract:
The effects of hole injection in amorphous-IGZO is analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high self-trapping energies (from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides and remain localized close to the hole injection source due to the presence of a large diffusio…
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The effects of hole injection in amorphous-IGZO is analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high self-trapping energies (from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides and remain localized close to the hole injection source due to the presence of a large diffusion energy barrier (of at least 0.6eV). Their diffusion mechanism can be mediated by the presence of hydrogen. The capture of these holes is correlated with the low off-current observed for a-IGZO transistors, as well as, with the difficulty to obtain a p-type conductivity. The results further support the formation of peroxides as being the root cause of Negative bias illumination stress (NBIS). The strong self-trapping substantially reduces the injection of holes from the contact and limits the creation of peroxides from a direct hole injection. In presence of light, the concentration of holes substantially rises and mediates the creation of peroxides, responsible for NBIS.
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Submitted 12 September, 2017;
originally announced September 2017.
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Thickness dependence of the resistivity of Platinum group metal thin films
Authors:
Shibesh Dutta,
Kiroubanand Sankaran,
Kristof Moors,
Geoffrey Pourtois,
Sven Van Elshocht,
Jurgen Bommels,
Wilfried Vandervorst,
Zsolt Tokei,
Christoph Adelmann
Abstract:
We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5\,nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free…
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We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5\,nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas--Shatzkes model [Phys. Rev. B 1, 1382 (1970)] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas--Shatzkes model in consideration of the experimental findings.
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Submitted 21 August, 2017; v1 submitted 15 January, 2017;
originally announced January 2017.
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Conservation of dielectric constant upon amorphization in perovskite oxides
Authors:
Pietro Delugas,
Vincenzo Fiorentini,
Alessio Filippetti,
Geoffrey Pourtois
Abstract:
We report calculations indicating that amorphous RAO$_3$ oxides, with R and A trivalent cations, have approximately the same static dielectric constant as their perovskite crystal phase. The effect is due to the disorder-activated polar response of non-polar crystal modes at low frequency, which compensates a moderate but appreciable reduction of the ionic dynamical charges. The dielectric respo…
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We report calculations indicating that amorphous RAO$_3$ oxides, with R and A trivalent cations, have approximately the same static dielectric constant as their perovskite crystal phase. The effect is due to the disorder-activated polar response of non-polar crystal modes at low frequency, which compensates a moderate but appreciable reduction of the ionic dynamical charges. The dielectric response was studied via density-functional perturbation theory. Amorphous samples were generated by molecular dynamics melt-and-quench simulations.
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Submitted 4 March, 2008;
originally announced March 2008.
