Showing 1–50 of 82 results for author: Placais, B

Time-domain braiding of anyons

Authors: Mélanie Ruelle, Elric Frigerio, Emmanuel Baudin, Jean-Marc Berroir, Bernard Plaçais, Benoit Grémaud, Thibaut Jonckheere, Thierry Martin, Jérôme Rech, Antonella Cavanna, Ulf Gennser, Yong Jin, Gerbold Ménard, Gwendal Fève

Abstract: Contrary to fermions and bosons, anyons are quasiparticles that keep a robust memory of particle exchanges via a braiding phase factor. This provides them with unique dynamical properties so far unexplored. When an anyon excitation is emitted toward a quantum point contact (QPC) in a fractional quantum Hall (FQH) fluid, this memory translates into tunneling events that may occur long after the any… ▽ More Contrary to fermions and bosons, anyons are quasiparticles that keep a robust memory of particle exchanges via a braiding phase factor. This provides them with unique dynamical properties so far unexplored. When an anyon excitation is emitted toward a quantum point contact (QPC) in a fractional quantum Hall (FQH) fluid, this memory translates into tunneling events that may occur long after the anyon excitation has exited the QPC. Here, we use triggered anyon pulses incident on a QPC in a $ν= 1/3$ FQH fluid to investigate anyon tunneling in the time domain. We observe that braiding increases the tunneling timescale, which is set by the temperature and the anyon scaling dimension that characterizes the edge state dynamics. This contrasts with the electron behavior where braiding is absent and the tunneling timescale is set by the temporal width of the generated electron pulses. Our experiment introduces time-domain measurements for characterizing the braiding phase and scaling dimension of anyons. △ Less

Submitted 13 September, 2024; originally announced September 2024.

Gate tunable edge magnetoplasmon resonators

Authors: E. Frigerio, G. Rebora, M. Ruelle, H. Souquet-Basiège, Y. Jin, U. Gennser, A. Cavanna, B. Plaçais, E. Baudin, J. -M. Berroir, I. Safi, P. Degiovanni, G. Fève, G. Ménard

Abstract: Quantum Hall systems are platforms of choice when it comes to study topological properties of condensed matter systems and anyonic exchange statistics. In this work we have developed a tunable radiofrequency edge magnetoplasmonic resonator meant to serve as a versatile platform for future interferometric devices. The resonance frequency of the system is controlled by both the magnetic field and a… ▽ More Quantum Hall systems are platforms of choice when it comes to study topological properties of condensed matter systems and anyonic exchange statistics. In this work we have developed a tunable radiofrequency edge magnetoplasmonic resonator meant to serve as a versatile platform for future interferometric devices. The resonance frequency of the system is controlled by both the magnetic field and a set of electrostatic gates. The gates allow us to change both the size of the resonant cavity and the electronic density of the two-dimensional electron gas. We show that we can continuously control the frequency response of our resonator, making it possible to develop an edge magnetoplasmon interferometer. As we reach smaller sizes of our resonator, finite size effects caused by the measurement probes manifest. We present a theoretical description of the system taking into account the spatial extension of the probing gates. In the future, such device will be a valuable tool to investigate the properties of non-abelian anyons in the fractional quantum Hall regime. △ Less

Submitted 23 September, 2024; v1 submitted 28 April, 2024; originally announced April 2024.

Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure

Authors: Romaine Kerjouan, Michael Rosticher, Aurélie Pierret, Kenji Watanabe, Takashi Taniguchi, Sukhdeep Dhillon, Robson Ferreira, Daniel Dolfi, Mark Goerbig, Bernard Plaçais, Juliette Mangeney

Abstract: The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hopping parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum tr… ▽ More The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hopping parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum transport across a succession of strain-induced barriers. We use high-mobility, hBN-encapsulated graphene, transferred over a large (10x10 $μ$m$^{2}$) crenellated hBN substrate. We show the emergence of a broad resistance ancillary peak at positive energy that arises from Klein tunneling barriers induced by the tensile strain at the trench edges. Our theoretical study, in quantitative agreement with experiment, highlights the balanced contributions of strain-induced scalar and pseudo-vector potentials on ballistic transport. Our results establish crenellated van der Waals heterostructures as a promising platform for strain engineering in view of applications and basic physics. △ Less

Submitted 28 February, 2024; originally announced February 2024.

The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions

Authors: Marin Tharrault, Sabrine Ayari, Mehdi Arfaoui, Eva Desgué, Romaric Le Goff, Pascal Morfin, José Palomo, Michael Rosticher, Sihem Jaziri, Bernard Plaçais, Pierre Legagneux, Francesca Carosella, Christophe Voisin, Robson Ferreira, Emmanuel Baudin

Abstract: $\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove inst… ▽ More $\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed light on the semiconductor to semimetal transition and to explore the effect of stacking and excitons on the optical absorption. △ Less

Submitted 7 August, 2024; v1 submitted 3 November, 2023; originally announced November 2023.

Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons

Authors: L. Abou-Hamdan, A. Schmitt, R. Bretel, S. Rossetti, M. Tharrault, D. Mele, A. Pierret, M. Rosticher, T. Taniguchi, K. Watanabe, C. Maestre, C. Journet, B. Toury, V. Garnier, P. Steyer, J. H. Edgar, E. Janzen, J-M. Berroir, G. Fève, G. Ménard, B. Plaçais, C. Voisin, J-P. Hugonin, E. Bailly, B. Vest , et al. (4 additional authors not shown)

Abstract: Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations ca… ▽ More Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR (λ = 6.5 μm) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process. △ Less

Submitted 8 July, 2024; v1 submitted 12 October, 2023; originally announced October 2023.

Comments: 30 pages including Extended Data and Supplementary Material (Main text: 8 pages, 4 figures)

Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals

Authors: Marin Tharrault, Eva Desgué, Dominique Carisetti, Bernard Plaçais, Christophe Voisin, Pierre Legagneux, Emmanuel Baudin

Abstract: Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline $\rm{PtSe_2}$ can be grown with various crystalline qualities, getting insight into the monocrystalline… ▽ More Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline $\rm{PtSe_2}$ can be grown with various crystalline qualities, getting insight into the monocrystalline intrinsic properties remains challenging. We report on the study of exfoliated 1 to 10 layers $\rm{PtSe_2}$ by Raman spectroscopy, featuring record linewidth. The clear Raman signatures allow layer-thickness identification and provides a reference metrics to assess crystal quality of grown films. △ Less

Submitted 12 February, 2024; v1 submitted 28 July, 2023; originally announced July 2023.

Comments: DOIs references corrected

Journal ref: 2D Mater. 11 025011 (2024)

Electroluminescence of the graphene 2D semi-metal

Authors: A. Schmitt, L. Abou-Hamdan, M. Tharrault, S. Rossetti, D. Mele, R. Bretel, A. Pierret, M. Rosticher, P. Morfin, T. Taniguchi, K. Watanabe, J. M. Berroir, G. Fève, G. Ménard, B. Plaçais, C. Voisin, J. P. Hugonin, J. J. Greffet, P. Bouchon, Y. De Wilde, E. Baudin

Abstract: Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating the radiative emission of semi-metallic graphene field-effect transistors over a broad spectral range, spanning the near- and mid-infrared, we demonstrate direct… ▽ More Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating the radiative emission of semi-metallic graphene field-effect transistors over a broad spectral range, spanning the near- and mid-infrared, we demonstrate direct far-field electroluminescence from hBN-encapsulated graphene in the mid-infrared under large bias in ambient conditions. Through a series of test experiments ruling out its incandescence origin, we determine that the electroluminescent signal results from the electrical pumping produced by interband tunneling. We show that the mid-infrared electroluminescence is spectrally shaped by a natural quarter-wave resonance of the heterostructure. This work invites a reassessment of the use of metals and semi-metals as non-equilibrium light emitters, and the exploration of their intriguing specificities in terms of carrier injection and relaxation, as well as emission tunability and switching speed. △ Less

Submitted 8 June, 2023; originally announced June 2023.

Comments: Main text (8 pages , 3 figures ) + Supplementary Information ( 19 pages , 19 figures)

Magneto-exciton limit of quantum Hall breakdown in graphene

Authors: A. Schmitt, M. Rosticher, T. Taniguchi, K. Watanabe, G. Fève, J-M. Berroir, G. Ménard, C. Voisin, M. O. Goerbig, B. Plaçais, E. Baudin

Abstract: One of the intrinsic drift velocity limit of the quantum Hall effect is the collective magneto-exciton (ME) instability. It has been demonstrated in bilayer graphene (BLG) using noise measurements. We reproduce this experiment in monolayer graphene (MLG), and show that the same mechanism carries a direct relativistic signature on the breakdown velocity. Based on theoretical calculations of MLG- an… ▽ More One of the intrinsic drift velocity limit of the quantum Hall effect is the collective magneto-exciton (ME) instability. It has been demonstrated in bilayer graphene (BLG) using noise measurements. We reproduce this experiment in monolayer graphene (MLG), and show that the same mechanism carries a direct relativistic signature on the breakdown velocity. Based on theoretical calculations of MLG- and BLG-ME spectra, we show that Doppler-induced instabilities manifest for a ME phase velocity determined by a universal value of the ME conductivity, set by the Hall conductance. △ Less

Submitted 10 March, 2023; v1 submitted 28 February, 2023; originally announced February 2023.

Comments: 27 pages, 11 figures including supplementary information (14 pages and 3 figures for the main text alone)

Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators

Authors: Alexandre Gourmelon, Elric Frigerio, Hiroshi Kamata, Lukas Lunczer, Anne Denis, Pascal Morfin, Michael Rosticher, Jean-Marc Berroir, Gwendal Fève, Bernard Plaçais, Hartmut Buhmann, Laurens W. Molenkamp, Erwann Bocquillon

Abstract: High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We obs… ▽ More High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We observe low plasmon velocities corresponding to large transverse widths, which we ascribe to the prominent influence of charge puddles forming in the vicinity of edge channels. Together with other recent works, it suggests that puddles play an essential role in the edge state physics and probably constitute a main hurdle on the way to clean and robust edge transport. △ Less

Submitted 22 February, 2023; originally announced February 2023.

Comments: 8 pages, 6 figures, + supplementary material

High-field 1/f noise in hBN-encapsulated graphene transistors

Authors: A. Schmitt, D. Mele, M. Rosticher, T. Taniguchi, K. Watanabe, C. Maestre, C. Journet, V. Garnier, G. Fève, J. M. Berroir, C. Voisin, B. Plaçais, 1, E. Baudin

Abstract: Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$α$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance electronics. Early investigations in diffusive graphene have pointed out a deviation from the standard Hooge formula, with a modified expression where the free-carrier densit… ▽ More Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$α$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance electronics. Early investigations in diffusive graphene have pointed out a deviation from the standard Hooge formula, with a modified expression where the free-carrier density is substituted by a constant density $n_Δ\sim10^{12}\;\mathrm{cm^{-2}}$. We investigate hBN-encapsulated graphene transistors where high mobility gives rise to the non-linear velocity-saturation regime. In this regime, the $α$-noise is accounted for by substituting conductance by differential conductance $G$, ressulting in a bell-shape dependence of flicker noise with bias voltage $V$. The same analysis holds at larger bias in the Zener regime, with two main differences: the first one is a strong enhancement of the Hooge parameter reflecting the hundred-times larger coupling of interband excitations to the hyperbolic phonon-polariton (HPhP) modes of the mid-infrared Reststrahlen (RS) bands of hBN. The second is an exponential suppression of this coupling at large fields, which we attribute to decoherence effects. We also show that the HPhP bands control the amplitude of flicker noise according to the graphene-hBN thermal coupling estimated with microwave noise thermometry. The phenomenology of $α$-noise in graphene supports a quantum-coherent bremsstrahlung interpretation of flicker noise. △ Less

Submitted 13 February, 2023; v1 submitted 27 January, 2023; originally announced January 2023.

Comments: v2, main + SI, added reference to open data on Zenodo repository

Journal ref: Phys. Rev. B 107, L161104 (2023)

Observation of edge magnetoplasmon squeezing in a quantum Hall conductor

Authors: H. Bartolomei, R. Bisognin, H. Kamata, J. -M. Berroir, E. Bocquillon, G. Ménard, B. Plaçais, A. Cavanna, U. Gennser, Y. Jin, P. Degiovanni, C. Mora, G. Fève

Abstract: Squeezing of the quadratures of the electromagnetic field has been extensively studied in optics and microwaves. However, previous works focused on the generation of squeezed states in a low impedance ($Z_0 \approx 50 Ω$) environment. We report here on the demonstration of the squeezing of bosonic edge magnetoplasmon modes in a quantum Hall conductor whose characteristic impedance is set by the qu… ▽ More Squeezing of the quadratures of the electromagnetic field has been extensively studied in optics and microwaves. However, previous works focused on the generation of squeezed states in a low impedance ($Z_0 \approx 50 Ω$) environment. We report here on the demonstration of the squeezing of bosonic edge magnetoplasmon modes in a quantum Hall conductor whose characteristic impedance is set by the quantum of resistance ($R_K \approx 25 k Ω$), offering the possibility of an enhanced coupling to low-dimensional quantum conductors. By applying a combination of dc and ac drives to a quantum point contact, we demonstrate squeezing and observe a noise reduction 18\% below the vacuum fluctuations. This level of squeezing can be improved by using more complex conductors, such as ac driven quantum dots or mesoscopic capacitors. △ Less

Submitted 9 October, 2022; originally announced October 2022.

Comments: 6+2 pages, 3+1 figures

Comparing fractional quantum Hall Laughlin and Jain topological orders with the anyon collider

Authors: M. Ruelle, E. Frigerio, J. -M. Berroir, B. Plaçais, J. Rech, A. Cavanna, U. Gennser, Y. Jin, G. Fève

Abstract: Anyon collision experiments have recently demonstrated the ability to discriminate between fermionic and anyonic statistics. However, only one type of anyons associated with the simple Laughlin state at filling factor $ν=1/3$ has been probed so far. It is now important to establish anyon collisions as quantitative probes of fractional statistics for more complex topological orders, with the abilit… ▽ More Anyon collision experiments have recently demonstrated the ability to discriminate between fermionic and anyonic statistics. However, only one type of anyons associated with the simple Laughlin state at filling factor $ν=1/3$ has been probed so far. It is now important to establish anyon collisions as quantitative probes of fractional statistics for more complex topological orders, with the ability to distinguish between different species of anyons with different statistics. In this work, we use the anyon collider to compare the Laughlin $ν=1/3$ state, which is used as the reference state, with the more complex Jain state at $ν=2/5$, where low energy excitations are carried by two co-propagating edge channels. We demonstrate that anyons generated on the outer channel of the $ν=2/5$ state (with a fractional charge $e^*=e/3$) have a similar behavior compared to $ν=1/3$, showing the robustness of anyon collision signals for anyons of the same type. In contrast, anyons emitted on the inner channel of $ν=2/5$ (with a fractional charge $e^*=e/5$) exhibit a reduced degree of bunching compared to the $ν=1/3$ case, demonstrating the ability of the anyon collider to discriminate not only between anyons and fermions, but also between different species of anyons associated with different topological orders of the bulk. Our experimental results for the inner channel of $ν=2/5$ also point towards an influence of interchannel interactions in anyon collision experiments when several co-propagating edge channels are present. A quantitative understanding of these effects will be important for extensions of anyon collisions to non-abelian topological orders, where several charged and neutral modes propagate at the edge. △ Less

Submitted 3 October, 2022; originally announced October 2022.

Comments: 17 pages, 5 figures

Mesoscopic Klein-Schwinger effect in graphene

Authors: A. Schmitt, P. Vallet, D. Mele, M. Rosticher, T. Taniguchi, K. Watanabe, E. Bocquillon, G. Fève, J. M. Berroir, C. Voisin, J. Cayssol, M. O. Goerbig, J. Troost, E. Baudin, B. Plaçais

Abstract: Strong electric field annihilation by particle-antiparticle pair creation, also known as the Schwinger effect, is a non-perturbative prediction of quantum electrodynamics. Its experimental demonstration remains elusive, as threshold electric fields are extremely strong and beyond current reach. Here, we propose a mesoscopic variant of the Schwinger effect in graphene, which hosts Dirac fermions wi… ▽ More Strong electric field annihilation by particle-antiparticle pair creation, also known as the Schwinger effect, is a non-perturbative prediction of quantum electrodynamics. Its experimental demonstration remains elusive, as threshold electric fields are extremely strong and beyond current reach. Here, we propose a mesoscopic variant of the Schwinger effect in graphene, which hosts Dirac fermions with an approximate electron-hole symmetry. Using transport measurements, we report on universal 1d-Schwinger conductance at the pinchoff of ballistic graphene transistors. Strong pinchoff electric fields are concentrated within approximately 1 $μ$m of the transistor's drain, and induce Schwinger electron-hole pair creation at saturation. This effect precedes a collective instability toward an ohmic Zener regime, which is rejected at twice the pinchoff voltage in long devices. These observations advance our understanding of current saturation limits in ballistic graphene and provide a direction for further quantum electrodynamic experiments in the laboratory. △ Less

Submitted 31 January, 2023; v1 submitted 27 July, 2022; originally announced July 2022.

Comments: 39 pages, 13 figures, final version with extended discussion of the pinchoff effect in supplementary informations, abstract updated

Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride

Authors: A. Pierret, D. Mele, H. Graef, J. Palomo, T. Taniguchi, K. Watanabe, Y. Li, B. Toury, C. Journet, P. Steyer, V. Garnier, A. Loiseau, J-M. Berroir, E. Bocquillon, G. Fève, C. Voisin, E. Baudin, M. Rosticher, B. Plaçais

Abstract: In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm… ▽ More In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant $ε_\parallel=3.4\pm0.2$ consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window $ε_\parallel=3$--$4$. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant $ε_\parallel\simeq3.1$ and a trap energy $Φ_B\simeq1.3\;\mathrm{eV}$, that is comparable with standard technologically relevant dielectrics. △ Less

Submitted 28 January, 2022; v1 submitted 15 January, 2022; originally announced January 2022.

Comments: 10 pages, 2 figures, AM version in Materials Research Express

Journal ref: Mater. Res. Express 9 065901 (2022)

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

Characterization of helical Luttinger liquids in microwave stepped-impedance edge resonators

Authors: Alexandre Gourmelon, Hiroshi Kamata, Jean-Marc Berroir, Gwendal Fève, Bernard Plaçais, Erwann Bocquillon

Abstract: Coulomb interaction has important consequences on the physics of quantum spin Hall edge states, weakening the topological protection via two-particle scattering and renormalizing both the velocity and charge of collective plasmon modes compared to that of free electrons. Despite these effects, interactions remain difficult to quantify. We propose here simple and robust edge resonator geometries to… ▽ More Coulomb interaction has important consequences on the physics of quantum spin Hall edge states, weakening the topological protection via two-particle scattering and renormalizing both the velocity and charge of collective plasmon modes compared to that of free electrons. Despite these effects, interactions remain difficult to quantify. We propose here simple and robust edge resonator geometries to characterize Coulomb interaction by means of high-frequency measurements. They rely on a transmission line approach, and take advantage of the impedance mismatch between the edge states and their microwave environment. △ Less

Submitted 16 November, 2020; originally announced November 2020.

Comments: 8 pages, 5 figures. Accepted for publication in Phys. Rev. Research

Journal ref: Phys. Rev. Research 2, 043383 (2020)

Fractional statistics in anyon collisions

Authors: H. Bartolomei, M. Kumar, R. Bisognin, A. Marguerite, J. -M. Berroir, E. Bocquillon, B. Plaçais, A. Cavanna, Q. Dong, U. Gennser, Y. Jin, G. Fève

Abstract: Two-dimensional systems can host exotic particles called anyons whose quantum statistics are neither bosonic nor fermionic. For example, the elementary excitations of the fractional quantum Hall effect at filling factor $ν=1/m$ (where m is an odd integer) have been predicted to obey abelian fractional statistics, with a phase $\varphi$ associated with the exchange of two particles equal to $π/m$.… ▽ More Two-dimensional systems can host exotic particles called anyons whose quantum statistics are neither bosonic nor fermionic. For example, the elementary excitations of the fractional quantum Hall effect at filling factor $ν=1/m$ (where m is an odd integer) have been predicted to obey abelian fractional statistics, with a phase $\varphi$ associated with the exchange of two particles equal to $π/m$. However, despite numerous experimental attempts, clear signatures of fractional statistics remain elusive. Here we experimentally demonstrate abelian fractional statistics at filling factor $ν=1/3$ by measuring the current correlations resulting from the collision between anyons at a beam-splitter. By analyzing their dependence on the anyon current impinging on the splitter and comparing with recent theoretical models, we extract $\varphi=π/3$, in agreement with predictions. △ Less

Submitted 23 June, 2020; originally announced June 2020.

Comments: 5 pages, supplementary material can be downloaded at https://science.sciencemag.org/content/368/6487/173/suppl/DC1

Journal ref: Science 368, 173-177 (2020)

Quantum tomography of electrical currents

Authors: R. Bisognin, A. Marguerite, B. Roussel, M. Kumar, C. Cabart, C. Chapdelaine, A. Mohammad-Djafari, J. -M. Berroir, E. Bocquillon, B. Plaçais, A. Cavanna, U. Gennser, Y. Jin, P. Degiovanni, G. Fève

Abstract: In quantum nanoelectronics, time-dependent electrical currents are built from few elementary excitations emitted with well-defined wavefunctions. However, despite the realization of sources generating quantized numbers of excitations, and despite the development of the theoretical framework of time-dependent quantum electronics, extracting electron and hole wavefunctions from electrical currents h… ▽ More In quantum nanoelectronics, time-dependent electrical currents are built from few elementary excitations emitted with well-defined wavefunctions. However, despite the realization of sources generating quantized numbers of excitations, and despite the development of the theoretical framework of time-dependent quantum electronics, extracting electron and hole wavefunctions from electrical currents has so far remained out of reach, both at the theoretical and experimental levels. In this work, we demonstrate a quantum tomography protocol which extracts the generated electron and hole wavefunctions and their emission probabilities from any electrical current. It combines two-particle interferometry with signal processing. Using our technique, we extract the wavefunctions generated by trains of Lorentzian pulses carrying one or two electrons. By demonstrating the synthesis and complete characterization of electronic wavefunctions in conductors, this work offers perspectives for quantum information processing with electrical currents and for investigating basic quantum physics in many-body systems. △ Less

Submitted 24 March, 2020; originally announced March 2020.

Comments: Preprint version, supplementary material is available at https://static-content.springer.com/esm/art%3A10.1038%2Fs41467-019-11369-5/MediaObjects/41467_2019_11369_MOESM1_ESM.pdf

Journal ref: Nature Communications volume 10, Article number: 3379 (2019)

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors

Authors: Andreas Inhofer, Taylor Wilde, Jack Duffy, Mohamed Boukhicha, José Palomo, Kenji Watanabe, Takashi Taniguchi, Jean-Marc Berroir, Gwendal Fève, Erwann Bocquillon, Bernard Plaçais, Badih A. Assaf

Abstract: The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract the compressibility of the Dirac state located at a gated TI surface. We show that even in the presence of an ungated surface that hosts a trivial electron acc… ▽ More The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract the compressibility of the Dirac state located at a gated TI surface. We show that even in the presence of an ungated surface that hosts a trivial electron accumulation layer, the other gated surface always exhibits an ambipolar effect in the quantum capacitance. We succeed in determining the velocity of surface Dirac fermions in two devices, one with a passivated surface and the other with a free surface that hosts trivial states. Our results demonstrate the potential of RF quantum capacitance techniques to probe surface states of systems in the presence of a parasitic density-of-states. △ Less

Submitted 14 August, 2019; originally announced August 2019.

Comments: J. Phys.: Mater. Focus on Topological Matter

Hyperbolic Phonon Polariton Electroluminescence as an Electronic Cooling Pathway

Authors: E. Baudin, C. Voisin, B. Placais

Abstract: Engineering of cooling mechanism is of primary importance for the development of nanoelectronics. Whereas radiation cooling is rather inefficient in nowadays electronic devices, the strong anisotropy of 2D materials allows for enhanced efficiency because their hyperbolic electromagnetic dispersion near phonon resonances allows them to sustain much larger ($\sim 10^5$) number of radiating channels.… ▽ More Engineering of cooling mechanism is of primary importance for the development of nanoelectronics. Whereas radiation cooling is rather inefficient in nowadays electronic devices, the strong anisotropy of 2D materials allows for enhanced efficiency because their hyperbolic electromagnetic dispersion near phonon resonances allows them to sustain much larger ($\sim 10^5$) number of radiating channels. In this review, we address radiation cooling in 2D materials, specifically graphene hexagonal boron nitride (hBN) heterostructures. We present the hyperbolic dispersion of electromagnetic waves due to anisotropy, and describe how the spontaneous fluctuations of current in a 2D electronic channel can radiate thermal energy in its hyperbolic surrounding medium. We show that both the regime of (i) thermal current fluctuations and (ii) out-of-equilibrium current fluctuations can be described within the framework of transmission line theory leading to (i) superPlanckian thermal emission and (ii) electroluminescent cooling. We discuss a recent experimental investigation on graphene-on-hBN transistors using electronic noise thermometry. In a high mobility semimetal like graphene at large bias, a steady-state out-of-equilibrium situation is caused by the constant Zener tunneling of electrons opening a route for electroluminescence of hyperbolic electromagnetic modes. Experiments reveal that, compared to superPlanckian thermal emission, electroluminescence cooling is particularly prominent once the Zener tunneling regime is reached: observed cooling powers are nine orders of magnitude larger than in conventional LEDs. △ Less

Submitted 8 August, 2019; originally announced August 2019.

Comments: 13 pages, 5 figures, review

Microwave photons emitted by fractionally charged quasiparticles

Authors: R. Bisognin, H. Bartolomei, M. Kumar, I. Safi, J. -M. Berroir, E. Bocquillon, B. Plaçais, A. Cavanna, U. Gennser, Y. Jin, G. Fève

Abstract: Strongly correlated low-dimensional systems can host exotic elementary excitations carrying a fractional charge $q$ and potentially obeying anyonic statistics. In the fractional quantum Hall effect, their fractional charge has been successfully determined owing to low frequency shot noise measurements. However, a universal method for sensing them unambiguously and unraveling their intricate dynami… ▽ More Strongly correlated low-dimensional systems can host exotic elementary excitations carrying a fractional charge $q$ and potentially obeying anyonic statistics. In the fractional quantum Hall effect, their fractional charge has been successfully determined owing to low frequency shot noise measurements. However, a universal method for sensing them unambiguously and unraveling their intricate dynamics was still lacking. Here, we demonstrate that this can be achieved by measuring the microwave photons emitted by such excitations when they are transferred through a potential barrier biased with a dc voltage $V_{\text{dc}}$. We observe that only photons at frequencies $f$ below $qV_{\text{dc}}/h$ are emitted. This threshold provides a direct and unambiguous determination of the charge $q$, and a signature of exclusion statistics. Derived initially within the Luttinger model, this feature is also predicted by universal non-equilibrium fluctuation relations which agree fully with our measurements. Our work paves the way for further exploration of anyonic statistics using microwave measurements. △ Less

Submitted 10 July, 2019; originally announced July 2019.

Comments: 16 pages, 4 figures

Journal ref: Nature Communications volume 10, Article number: 1708 (2019)

Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators

Authors: Matthieu C. Dartiailh, Simon Hartinger, Alexandre Gourmelon, Kalle Bendias, Hugo Bartolomei, Hiroshi Kamata, Jean-Marc Berroir, Gwendal Fève, Bernard Plaçais, Lukas Lunczer, Raimund Schlereth, Hartmut Buhmann, Laurens W. Molenkamp, Erwann Bocquillon

Abstract: Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carrier… ▽ More Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales, and suggests that edge states can be addressed selectively on timescales over which bulk carriers are frozen. △ Less

Submitted 8 July, 2019; v1 submitted 29 March, 2019; originally announced March 2019.

Comments: Main text (5 pages, 4 figures) + Supplementary Material

Journal ref: Phys. Rev. Lett. 124, 076802 (2020)

Layering transitions in superfluid helium adsorbed on a carbon nanotube mechanical resonator

Authors: Adrien Noury, Jorge Vergara-Cruz, Pascal Morfin, Bernard Plaçais, Maria Carmen Gordillo, Jordi Boronat, Sébastien Balibar, Adrian Bachtold

Abstract: Helium is recognized as a model system for the study of phase transitions. Of particular interest is the superfluid phase in two dimensions. We report measurements on superfluid helium films adsorbed on the surface of a suspended carbon nanotube. We measure the mechanical vibrations of the nanotube to probe the adsorbed helium film. We demonstrate the formation of helium layers up to five atoms th… ▽ More Helium is recognized as a model system for the study of phase transitions. Of particular interest is the superfluid phase in two dimensions. We report measurements on superfluid helium films adsorbed on the surface of a suspended carbon nanotube. We measure the mechanical vibrations of the nanotube to probe the adsorbed helium film. We demonstrate the formation of helium layers up to five atoms thickness. Upon increasing the vapour pressure, we observe layer-by-layer growth with discontinuities in both the number of adsorbed atoms and the speed of sound in the adsorbed film. These hitherto unobserved discontinuities point to a series of first-order layering transitions. Our results show that helium multilayers adsorbed on a nanotube are of unprecedented quality compared to previous works. They pave the way to new studies of quantized superfluid vortex dynamics on cylindrical surfaces, of the Berezinskii-Kosterlitz-Thouless phase transition in this new geometry, perhaps also to supersolidity in crystalline single layers as predicted in quantum Monte Carlo calculations. △ Less

Submitted 29 April, 2019; v1 submitted 28 January, 2019; originally announced January 2019.

Comments: 10 pages, 3 figures

Journal ref: Phys. Rev. Lett. 122, 165301 (2019)

A corner reflector of graphene Dirac fermions as a phonon-scattering sensor

Authors: H. Graef, Q. Wilmart, M. Rosticher, D. Mele, L. Banszerus, C. Stampfer, T. Taniguchi, K. Watanabe, J-M. Berroir, E. Bocquillon, G. Fève, E. H. T. Teo, B. Plaçais

Abstract: Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs a… ▽ More Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs are sensitive to minute phonon scattering rates. We report on doping-independent CR transmission in quantitative agreement with a simple scattering model including thermal phonon scattering. As a new signature of CRs, we observe Fabry-Pérot oscillations at low temperature, consistent with single-path reflections. Finally, we demonstrate high-frequency operation which promotes CRs as fast phonon detectors. Our work establishes the relevance of Dirac fermion optics in graphene and opens a route for its implementation in topological Dirac matter. △ Less

Submitted 8 January, 2019; originally announced January 2019.

Comments: 11 pages, 4 figures

Ultra-long wavelength Dirac plasmons in graphene capacitors

Authors: H. Graef, D. Mele, M. Rosticher, C. Stampfer, T. Taniguchi, K. Watanabe, E. Bocquillon, G. Fève, J-M. Berroir, E. H. T. Teo, B. Plaçais

Abstract: Graphene is a valuable 2D platform for plasmonics as illustrated in recent THz and mid-infrared optics experiments. These high-energy plasmons however, couple to the dielectric surface modes giving rise to hybrid plasmon-polariton excitations. Ultra-long-wavelengthes address the low energy end of the plasmon spectrum, in the GHz-THz electronic domain, where intrinsic graphene Dirac plasmons are es… ▽ More Graphene is a valuable 2D platform for plasmonics as illustrated in recent THz and mid-infrared optics experiments. These high-energy plasmons however, couple to the dielectric surface modes giving rise to hybrid plasmon-polariton excitations. Ultra-long-wavelengthes address the low energy end of the plasmon spectrum, in the GHz-THz electronic domain, where intrinsic graphene Dirac plasmons are essentially decoupled from their environment. However experiments are elusive due to the damping by ohmic losses at low frequencies. We demonstrate here a plasma resonance capacitor (PRC) using hexagonal boron-nitride (hBN) encapsulated graphene at cryogenic temperatures in the near ballistic regime. We report on a $100\;\mathrm{μm}$ quarter-wave plasmon mode, at $40\;\mathrm{GHz}$, with a quality factor $Q\simeq2$. The accuracy of the resonant technique yields a precise determination of the electronic compressibility and kinetic inductance, allowing to assess residual deviations from intrinsic Dirac plasmonics. Our capacitor GHz experiment constitutes a first step toward the demonstration of plasma resonance transistors for microwave detection in the sub-THz domain for wireless communications and sensing. It also paves the way to the realization of doping modulated superlattices where plasmon propagation is controlled by Klein tunneling. △ Less

Submitted 22 June, 2018; originally announced June 2018.

Comments: 10 pages, 3 figures

Journal ref: J. Phys. Mater. 1 01LT02 (2018)

Landau velocity for collective quantum Hall breakdown in bilayer graphene

Authors: W. Yang, H. Graef, X. Lu, G. Zhang, T. Taniguchi, K. Watanabe, A. Bachtold, E. H. T. Teo, E. Baudin, E. Bocquillon, G. Fève, J-M. Berroir, D. Carpentier, M. O. Goerbig, B. Plaçais

Abstract: Breakdown of the quantum Hall effect (QHE) is commonly associated with an electric field approaching the inter Landau-level (LL) Zener field, ratio of the Landau gap and cyclotron radius. Eluded in semiconducting heterostructures, in spite of extensive investigation, the intrinsic Zener limit is reported here using high-mobility bilayer graphene and high-frequency current noise. We show that colle… ▽ More Breakdown of the quantum Hall effect (QHE) is commonly associated with an electric field approaching the inter Landau-level (LL) Zener field, ratio of the Landau gap and cyclotron radius. Eluded in semiconducting heterostructures, in spite of extensive investigation, the intrinsic Zener limit is reported here using high-mobility bilayer graphene and high-frequency current noise. We show that collective excitations arising from electron-electron interactions are essential. Beyond a noiseless ballistic QHE regime a large superpoissonian shot noise signals the breakdown via inter-LL scattering. The breakdown is ultimately limited by collective excitations in a regime where phonon and impurity scattering are quenched. The breakdown mechanism can be described by a Landau critical velocity as it bears strong similarities with the roton mechanism of superfluids. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Comments: 13 pages, 3 figures

Journal ref: Phys. Rev. Lett. 121, 136804 (2018)

Onset of optical-phonon cooling in multilayer graphene revealed by RF noise and black-body radiation thermometries

Authors: D. Brunel, S. Berthou, R. Parret, F. Vialla, P. Morfin, Q. Wilmart, G. Fève, J. -M. Berroir, P. Roussignol, C. Voisin, B. Plaçais

Abstract: We report on electron cooling power measurements in few-layer graphene excited by Joule heating by means of a new setup combining electrical and optical probes of the electron and phonon baths temperatures. At low bias, noise thermometry allows us to retrieve the well known acoustic phonon cooling regimes below and above the Bloch Grüneisen temperature, with additional control over the phonon bath… ▽ More We report on electron cooling power measurements in few-layer graphene excited by Joule heating by means of a new setup combining electrical and optical probes of the electron and phonon baths temperatures. At low bias, noise thermometry allows us to retrieve the well known acoustic phonon cooling regimes below and above the Bloch Grüneisen temperature, with additional control over the phonon bath temperature. At high electrical bias, we show the relevance of direct optical investigation of the electronic temperature by means of black-body radiation measurements that provide higher accuracy than noise thermometry. In this regime, the onset of new efficient relaxation pathways involving optical modes is observed △ Less

Submitted 29 April, 2018; originally announced April 2018.

Journal ref: J. Phys. : Condens. Matter 27, 164208 (2015)

Contact gating at GHz frequency in graphene

Authors: Q. Wilmart, A. Inhofer, M. Boukhicha, W. Yang, M. Rosticher, P. Morfin, N. Garroum, G. Fève, J. -M. Berroir, B. Plaçais

Abstract: The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates… ▽ More The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates. △ Less

Submitted 29 April, 2018; originally announced April 2018.

Journal ref: Scientific Reports 6, 1 (2016)

Importance of non-local electron correlations in BaNiS$_{2}$ semimetal from quantum oscillations studies

Authors: Yannick Klein, Michele Casula, David Santos-Cottin, Alain Audouard, David Vignolles, Gwendal Fève, Vincent Freulon, Bernard Plaçais, Marine Verseils, Hancheng Yang, Lorenzo Paulatto, Andrea Gauzzi

Abstract: By means of Shubnikov-de-Haas and de-Haas-van-Alphen oscillations, and ab initio calculations, we have studied the Fermi surface of high-quality BaNiS$_2$ single crystals, with mean free path $l \sim 400 ~\textÅ$. The angle and temperature dependence of quantum oscillations indicates a quasi-two-dimensional Fermi surface, made of an electron-like tube centred at $Γ$, and of 4 hole-like cones, gene… ▽ More By means of Shubnikov-de-Haas and de-Haas-van-Alphen oscillations, and ab initio calculations, we have studied the Fermi surface of high-quality BaNiS$_2$ single crystals, with mean free path $l \sim 400 ~\textÅ$. The angle and temperature dependence of quantum oscillations indicates a quasi-two-dimensional Fermi surface, made of an electron-like tube centred at $Γ$, and of 4 hole-like cones, generated by Dirac bands, weakly dispersive in the out-of-plane direction. Ab initio electronic structure calculations, in the density functional theory framework, show that the inclusion of screened exchange is necessary to account for the experimental Fermi pockets. Therefore, the choice of the functional becomes crucial. A modified HSE hybrid functional with 7% of exact exchange outperforms both GGA and GGA+U density functionals, signalling the importance of non-local screened-exchange interactions in BaNiS$_2$, and, more generally, in $3d$ compensated semimetals. △ Less

Submitted 9 March, 2018; originally announced March 2018.

Comments: 8 figures

Journal ref: Physical Review B 97, 075140 (2018)

Extracting single electron wavefunctions from a quantum electrical current

Authors: A. Marguerite, B. Roussel, R. Bisognin, C. Cabart, M. Kumar, J. -M. Berroir, E. Bocquillon, B. Plaçais, A. Cavanna, U. Gennser, Y. Jin, P. Degiovanni, G. Fève

Abstract: Quantum nanoelectronics has entered an era where quantum electrical currents are built from single to few on-demand elementary excitations. To date however, very limited tools have been implemented to characterize them. In this work, we present a quantum current analyzer able to extract single particle excitations present within a periodic quantum electrical current without any a priori hypothesis… ▽ More Quantum nanoelectronics has entered an era where quantum electrical currents are built from single to few on-demand elementary excitations. To date however, very limited tools have been implemented to characterize them. In this work, we present a quantum current analyzer able to extract single particle excitations present within a periodic quantum electrical current without any a priori hypothesis. Our analyzer combines two-particle interferometry and signal processing to extract the relevant electron and hole wavefunctions localized around each emission period and their quantum coherence from one emission period to the other. This quantum current analyzer opens new possibilities for the characterization and control of quantum electrical currents in nanoscale conductors and for investigations of entanglement in quantum electronics down to the single electron level. △ Less

Submitted 30 October, 2017; originally announced October 2017.

Comments: submitted, 6 pages plus 3 pages supplementary

RF-quantum capacitance of the topological insulator Bi2Se3 in the bulk depleted regime for field-effect transistors

Authors: A. Inhofer, J. Duffy, M. Boukhicha, E. Bocquillon, J. Palomo, K. Watanabe, T. Taniguchi, I. Estève, J. M. Berroir, G. Fève, B. Plaçais, B. A. Assaf

Abstract: A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capacitance and device resistance are extracted for frequencies as a high as 10 GHz, and studied as a function of the applied gate voltage. The combination of the superior quality hBN dielectric gate with the optimized trans… ▽ More A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capacitance and device resistance are extracted for frequencies as a high as 10 GHz, and studied as a function of the applied gate voltage. The combination of the superior quality hBN dielectric gate with the optimized transport characteristics of CVD grown Bi2Se3 (n~10^18cm-3 in 8 nm) allow us to attain a bulk depleted regime by dielectric gating. A quantum capacitance minimum is observed revealing a purely Dirac regime, where the Dirac surface state in proximity to the gate reaches charge neutrality, but the bottom surface Dirac cone remains charged, and couples capacitively to the top surface via the insulating bulk. Our work paves the way towards implementation of topological materials in RF devices. △ Less

Submitted 13 February, 2018; v1 submitted 6 July, 2017; originally announced July 2017.

Comments: accepted Phys. Rev. Applied

Journal ref: Phys. Rev. Applied 9, 024022 (2018)

Volkov-Pankratov states in topological heterojunctions

Authors: S. Tchoumakov, V. Jouffrey, A. Inhofer, E. Bocquillon, B. Plaçais, D. Carpentier, M. O. Goerbig

Abstract: We show that a smooth interface between two insulators of opposite topological Z2 indices possesses multiple surface states, both massless and massive. While the massless surface state is non-degenerate, chiral and insensitive to the interface potential, the massive surface states only appear for a sufficiently smooth heterojunction. The surface states are particle-hole symmetric and a voltage dro… ▽ More We show that a smooth interface between two insulators of opposite topological Z2 indices possesses multiple surface states, both massless and massive. While the massless surface state is non-degenerate, chiral and insensitive to the interface potential, the massive surface states only appear for a sufficiently smooth heterojunction. The surface states are particle-hole symmetric and a voltage drop reveals their intrinsic relativistic nature, similarly to Landau bands of Dirac electrons in a magnetic field. We discuss the relevance of the massive Dirac surface states in recent ARPES and transport experiments. △ Less

Submitted 11 October, 2017; v1 submitted 28 April, 2017; originally announced April 2017.

Comments: 5 pages, 3 figures; 6 pages of supplementary material incorporated; accepted for publication in Physical Review B as a Rapid Communication

Journal ref: Phys. Rev. B 96, 201302 (2017)

Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility

Authors: A. Inhofer, S. Tchoumakov, B. A. Assaf, G. Fève, J. M. Berroir, V. Jouffrey, D. Carpentier, M. Goerbig, B. Plaçais, K. Bendias, D. M. Mahler, E. Bocquillon, R. Schlereth, C. Brüne, H. Buhmann, L. W. Molenkamp

Abstract: It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this article we report on a set of experimental observations indicating the existence of massive surface states. These states are confined at the interface and domi… ▽ More It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this article we report on a set of experimental observations indicating the existence of massive surface states. These states are confined at the interface and dominate equilibrium and transport properties at high energy and/or high electric field. By monitoring the AC admittance of HgTe topological insulator field-effect capacitors, we access the compressibility and conductivity of surface states in a broad range of energy and electric fields. The Dirac surface states are characterized by a compressibility minimum, a linear energy dependence and a high mobility persisting up to energies much larger than the transport bandgap of the bulk. New features are revealed at high energies with signatures such as conductance peaks, compressibility bumps, a strong charge metastability and a Hall resistance anomaly. These features point to the existence of excited massive surface states, responsible for a strong intersubband scattering with the Dirac states and the nucleation of metastable bulk carriers. The spectrum of excited states agrees with predictions of a phenomenological model of the topological-trivial semiconductor interface. The model accounts for the finite interface depth and the effect of electric fields. The existence of excited topological states is essential for the understanding of topological phases and opens a route for engineering and exploiting topological resources in quantum technology. △ Less

Submitted 17 March, 2020; v1 submitted 13 April, 2017; originally announced April 2017.

Comments: 29 pages, 8 figures

Journal ref: Phys. Rev. B 96, 195104 (2017)

Dirac fermion reflector by ballistic graphene sawtooth-shaped npn junctions

Authors: Sei Morikawa, Quentin Wilmart, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Bernard Plaçais, Tomoki Machida

Abstract: We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed cl… ▽ More We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np+n regime, which is in good agreement with the numerical simulation. The tunable reflectance of ballistic carriers could be an elementary and important step for realizing ultrahigh-mobility graphene field effect transistors utilizing Dirac fermion optics in the near future. △ Less

Submitted 13 February, 2017; originally announced February 2017.

A graphene Zener-Klein transistor cooled by a hyperbolic substrate

Authors: W. Yang, S. Berthou, X. Lu, Q. Wilmart, A. Denis, M. Rosticher, T. Taniguchi, K. Watanabe, G. Feve, J. M. Berroir, G. Zhang, C. Voisin, E. Baudin, B. Plaçais

Abstract: Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is d… ▽ More Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease of the carrier density and Zener-Klein tunneling (ZKT) at high bias. Using noise thermometry, we show that this Zener-Klein tunneling triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons (HPP) in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT-transport and HPP-cooling promotes graphene on BN transistors as a valuable nanotechnology for power devices and RF electronics. △ Less

Submitted 25 April, 2018; v1 submitted 9 February, 2017; originally announced February 2017.

Comments: 15 pages, 4 figures

Journal ref: Nature Nanotechnology 13, 47 (2018)

Two-particle interferometry in quantum Hall edge channels

Authors: Arthur Marguerite, Erwann Bocquillon, Jean-Marc Berroir, Bernard Plaçais, Antonella Cavanna, Yong Jin, Pascal Degiovanni, Gwendal Fève

Abstract: Since pioneering works of Hanbury-Brown and Twiss, intensity-intensity correlations have been widely used in astronomical systems, for example to detect binary stars. They reveal statistics effects and two-particle interference, and offer a decoherence-free probe of the coherence properties of light sources. In the quantum Hall edge channels, the concept of quantum optics can transposed to electro… ▽ More Since pioneering works of Hanbury-Brown and Twiss, intensity-intensity correlations have been widely used in astronomical systems, for example to detect binary stars. They reveal statistics effects and two-particle interference, and offer a decoherence-free probe of the coherence properties of light sources. In the quantum Hall edge channels, the concept of quantum optics can transposed to electrons, and an analogous two-particle interferometry can be developed, in order to characterize single-electron states. We review in this article the recent experimental and theoretical progress on this topic. △ Less

Submitted 10 October, 2016; originally announced October 2016.

Comments: 14 pages, 10 figures, submitted for Physical Status Solidi B focus issue on 'Single-electron control in solid-state devices'

Journal ref: Physica Status Solidi B 254, March 2017

Decoherence and relaxation of a single electron in a one dimensional conductor

Authors: A. Marguerite, C. Cabart, C. Wahl, B. Roussel, V. Freulon, D. Ferraro, Ch. Grenier, J. -M. Berroir, B. Plaçais, T. Jonckheere, J. Rech, T. Martin, P. Degiovanni, A. Cavanna, Y. Jin, G. Fève

Abstract: We study the decoherence and relaxation of a single elementary electronic excitation propagating in a one-dimensional chiral conductor. Using two-particle interferences in the electronic analog of the Hong-Ou-Mandel experiment, we analyze quantitatively the decoherence scenario of a single electron propagating along a quantum Hall edge channel at filling factor 2. The decoherence results from the… ▽ More We study the decoherence and relaxation of a single elementary electronic excitation propagating in a one-dimensional chiral conductor. Using two-particle interferences in the electronic analog of the Hong-Ou-Mandel experiment, we analyze quantitatively the decoherence scenario of a single electron propagating along a quantum Hall edge channel at filling factor 2. The decoherence results from the emergence of collective neutral excitations induced by Coulomb interaction and leading, in one dimension, to the destruction of the elementary quasiparticle. This study establishes the relevance of electron quantum optics setups to provide stringent tests of strong interaction effects in one-dimensional conductors described by Luttinger liquids paradigm. △ Less

Submitted 12 September, 2016; originally announced September 2016.

Comments: 24 pages, 6 figures To be published in Physical Review B

Hong-Ou-Mandel experiment for temporal investigation of single electron fractionalization

Authors: V. Freulon, A. Marguerite, J. -M Berroir, B. Plaçais, A. Cavanna, Y. Jin, G. Fève

Abstract: Coulomb interaction has a striking effect on electronic propagation in one dimensional conductors. The interaction of an elementary excitation with neighboring conductors favors the emergence of collective modes which eventually leads to the destruction of the Landau quasiparticle. In this process, an injected electron tends to fractionalize into separated pulses carrying a fraction of the electro… ▽ More Coulomb interaction has a striking effect on electronic propagation in one dimensional conductors. The interaction of an elementary excitation with neighboring conductors favors the emergence of collective modes which eventually leads to the destruction of the Landau quasiparticle. In this process, an injected electron tends to fractionalize into separated pulses carrying a fraction of the electron charge. Here we use two-particle interferences in the electronic analog of the Hong-Ou-Mandel experiment in a quantum Hall conductor at filling factor 2 to probe the fate of a single electron emitted in the outer edge channel and interacting with the inner one. By studying both channels, we analyze the propagation of the single electron and the generation of interaction induced collective excitations in the inner channel. These complementary information reveal the fractionalization process in time domain and establish its relevance for the destruction of the quasiparticle which degrades into the collective modes. △ Less

Submitted 12 September, 2016; originally announced September 2016.

Journal ref: Nature Communications 6, 6854 (2015)

Dimensionality effects on the luminescence properties of hBN

Authors: éonard Schué, Bruno Berini, Bernard Plaçais, François Ducastelle, Julien Barjon, Annick Loiseau, Andreas Betz

Abstract: Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6--6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers hav… ▽ More Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6--6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers have been recorded. Strong modifications in the same UV range are observed and discussed within the general framework of 2D exciton properties in lamellar crystals. △ Less

Submitted 8 January, 2016; originally announced January 2016.

Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$

Authors: David Santos-Cottin, Andrea Gauzzi, Marine Verseils, Benoit Baptiste, Gwendal Feve, Vincent Freulon, Bernard Placais, Michele Casula, Yannick Klein

Abstract: We report on a systematic study of the thermodynamic, electronic and charge transport properties of high-quality single crystals of BaNiS$_2$, the metallic end-member of the quasi-twodimensional BaCo$_{1-x}$Ni$_x$S$_2$ system characterized by a metal-insulator transition at $x_{cr}=0.22$. Our analysis of magnetoresistivity and specific heat data consistently suggests a picture of compensated semim… ▽ More We report on a systematic study of the thermodynamic, electronic and charge transport properties of high-quality single crystals of BaNiS$_2$, the metallic end-member of the quasi-twodimensional BaCo$_{1-x}$Ni$_x$S$_2$ system characterized by a metal-insulator transition at $x_{cr}=0.22$. Our analysis of magnetoresistivity and specific heat data consistently suggests a picture of compensated semimetal with two hole- and one electron-bands, where electron-phonon scattering dominates charge transport and the minority holes exhibit, below $\sim$100 K, a very large mobility, $μ_h\sim$ 15000 cm$^2$V$^{-1}$s$^{-1}$, which is explained by a Dirac-like band. Evidence of unconventional metallic properties is given by an intriguing crossover of the resistivity from a Bloch-Grüneisen regime to a linear$-T$ regime occurring at 2 K and by a strong linear term in the paramagnetic susceptibility above 100 K. We discuss the possibility that these anomalies reflect a departure from conventional Fermi-liquid properties in presence of short-range AF fluctuations and of a large Hund coupling. △ Less

Submitted 26 February, 2016; v1 submitted 12 October, 2015; originally announced October 2015.

Comments: 21 pages 9 figures (colors)

Journal ref: Phys. Rev. B 93, 125120 (2016)

Klein-tunneling transistor with ballistic graphene

Authors: Quentin Wilmart, Salim Berada, David Torrin, V. Hung Nguyen, Gwendal Fève, Jean-Marc Berroir, Philippe Dollfus, Bernard Plaçais

Abstract: Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devices exploiting the optics-like behavior of Dirac Fermions (DF) as in the Vesalego lens or the Fabry Pérot cavity. Here we propose a Klein tun… ▽ More Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devices exploiting the optics-like behavior of Dirac Fermions (DF) as in the Vesalego lens or the Fabry Pérot cavity. Here we propose a Klein tunneling transistor based on geometrical optics of DF. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of the transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using Non Equilibrium Green's Function(NEGF) simulation. △ Less

Submitted 22 September, 2014; originally announced September 2014.

Comments: 4 pages, 5 figures

Journal ref: 2D Materials 1,(2014) 011006

Electron-optical phonon coupling in suspended bilayer graphene

Authors: Antti Laitinen, Manohar Kumar, Mika Oksanen, Bernard Plaçais, Pauli Virtanen, Pertti Hakonen

Abstract: Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we find that regular electron - optical phonon scattering in bilayer graphene provides the dominant scattering process at electron energies $ \gtrsim 0.15$ eV. We… ▽ More Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we find that regular electron - optical phonon scattering in bilayer graphene provides the dominant scattering process at electron energies $ \gtrsim 0.15$ eV. We determine the strength of these intrinsic heat flow processes of bilayer graphene and find good agreement with theoretical estimates when both zone edge and zone center optical phonons are taken into account. △ Less

Submitted 22 September, 2014; originally announced September 2014.

Comments: 8 pages and 10 figures including the supplement

Electron quantum optics in ballistic chiral conductors

Authors: E. Bocquillon, V. Freulon, F. D. Parmentier, J. -M Berroir, B. Plaçais, C. Wahl, J. Rech, T. Jonckheere, T. Martin, C. Grenier, D. Ferraro, P. Degiovanni, G. Fève

Abstract: The edge channels of the quantum Hall effect provide one dimensional chiral and ballistic wires along which electrons can be guided in optics like setup. Electronic propagation can then be analyzed using concepts and tools derived from optics. After a brief review of electron optics experiments performed using stationary current sources which continuously emit electrons in the conductor, this pape… ▽ More The edge channels of the quantum Hall effect provide one dimensional chiral and ballistic wires along which electrons can be guided in optics like setup. Electronic propagation can then be analyzed using concepts and tools derived from optics. After a brief review of electron optics experiments performed using stationary current sources which continuously emit electrons in the conductor, this paper focuses on triggered sources, which can generate on-demand a single particle state. It first outlines the electron optics formalism and its analogies and differences with photon optics and then turns to the presentation of single electron emitters and their characterization through the measurements of the average electrical current and its correlations. This is followed by a discussion of electron quantum optics experiments in the Hanbury-Brown and Twiss geometry where two-particle interferences occur. Finally, Coulomb interactions effects and their influence on single electron states are considered. △ Less

Submitted 1 March, 2014; originally announced March 2014.

Journal ref: Annalen der Physik, 526, 1 (2014)

Thermionic charge transport in CMOS nano-transistors

Authors: A. C. Betz, S. Barraud, Q. Wilmart, B. Plaçais, X. Jehl, M. Sanquer, M. F. Gonzalez - Zalba

Abstract: We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically ove… ▽ More We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature. △ Less

Submitted 10 December, 2013; originally announced December 2013.

Journal ref: APL 104, 043106 (2014)

Separation of neutral and charge modes in one dimensional chiral edge channels

Authors: E. Bocquillon, V. Freulon, J. -M. Berroir, P. Degiovanni, B. Plaçais, A. Cavanna, Y. Jin, G. Fève

Abstract: Coulomb interactions have a major role in one-dimensional electronic transport. They modify the nature of the elementary excitations from Landau quasiparticles in higher dimensions to collective excitations in one dimension. Here we report the direct observation of the collective neutral and charge modes of the two chiral co-propagating edge channels of opposite spins of the quantum Hall effect at… ▽ More Coulomb interactions have a major role in one-dimensional electronic transport. They modify the nature of the elementary excitations from Landau quasiparticles in higher dimensions to collective excitations in one dimension. Here we report the direct observation of the collective neutral and charge modes of the two chiral co-propagating edge channels of opposite spins of the quantum Hall effect at filling factor 2. Generating a charge density wave at frequency f in the outer channel, we measure the current induced by inter-channel Coulomb interaction in the inner channel after a 3-mm propagation length. Varying the driving frequency from 0.7 to 11 GHz, we observe damped oscillations in the induced current that result from the phase shift between the fast charge and slow neutral eigenmodes. We measure the dispersion relation and dissipation of the neutral mode from which we deduce quantitative information on the interaction range and parameters. △ Less

Submitted 22 September, 2013; originally announced September 2013.

Comments: 23 pages, 6 figures

Journal ref: Nature Communications 4, 1839 (2013)

Excitonic recombinations in hBN: from bulk to exfoliated layers

Authors: Aurélie Pierret, Jorge Loayza, Bruno Berini, Andreas Betz, Bernard Plaçais, François Ducastelle, Julien Barjon, Annick Loiseau

Abstract: Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared… ▽ More Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared to those of nanosheets mechanically exfoliated from them. First the link between the presence of structural defects and the recombination intensity of bound-excitons, the so-called D series, is confirmed. Low defective h-BN regions are further evidenced by CL spectral mapping (hyperspectral imaging), allowing us to observe new features in the near-band-edge region, tentatively attributed to phonon replica of exciton recombinations. Second the h-BN thickness was reduced down to six atomic layers, using mechanical exfoliation, as evidenced by atomic force microscopy. Even at these low thicknesses, the luminescence remains intense and exciton recombination energies are not strongly modified with respect to the bulk, as expected from theoretical calculations indicating extremely compact excitons in h-BN. △ Less

Submitted 6 February, 2014; v1 submitted 12 June, 2013; originally announced June 2013.

Journal ref: Physical Review B (Condensed Matter) 89 (2014) 035414

Coherence and Indistinguishability of Single Electrons Emitted by Independent Sources

Authors: E. Bocquillon, V. Freulon, J. -M Berroir, P. Degiovanni, B. Plaçais, A. Cavanna, Y. Jin, G. Fève

Abstract: The on-demand emission of coherent and indistinguishable electrons by independent synchronized sources is a challenging task of quantum electronics, in particular regarding its application for quantum information processing. Using two independent on-demand electron sources, we trigger the emission of two single-electron wavepackets at different inputs of an electronic beamsplitter. Whereas classic… ▽ More The on-demand emission of coherent and indistinguishable electrons by independent synchronized sources is a challenging task of quantum electronics, in particular regarding its application for quantum information processing. Using two independent on-demand electron sources, we trigger the emission of two single-electron wavepackets at different inputs of an electronic beamsplitter. Whereas classical particles would be randomly partitioned by the splitter, we observe two-particle interferences resulting from quantum exchange. Both electrons, emitted in indistinguishable wavepackets with synchronized arrival time on the splitter, exit in different outputs as recorded by the low frequency current noise. The demonstration of two-electron interference provides the possibility to manipulate coherent and indistinguishable single-electron wavepackets in quantum conductors. △ Less

Submitted 29 January, 2013; originally announced January 2013.

Comments: Science Express of January 24 2013

Supercollision cooling in undoped graphene

Authors: A. C. Betz, S. H. Jhang, E. Pallecchi, R. Feirrera, G. Fève, J. -M. Berroir, B. Plaçais

Abstract: Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed ou… ▽ More Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed out in Ref. \onlinecite{Song2012PRL}, this is the case in undoped graphene where the small Fermi surface drastically restricts the allowed phonon energy in ordinary collisions. Using electrical heating and sensitive noise thermometry we report on SC-cooling in diffusive monolayer graphene. At low carrier density and high phonon temperature the Joule power $P$ obeys a $P\propto T_e^3$ law as a function of electronic temperature $T_e$. It overrules the linear law expected for ordinary collisions which has recently been observed in resistivity measurements. The cubic law is characteristic of SCs and departs from the $T_e^4$ dependence recently reported for metallic graphene below the Bloch-Grüneisen temperature. These supercollisions are important for applications of graphene in bolometry and photo-detection. △ Less

Submitted 25 October, 2012; originally announced October 2012.

Journal ref: Nature Physics 9, 109 (2013)

A Coherent RC Circuit

Authors: Julien Gabelli, Gwendal Fève, Jean-Marc Berroir, Bernard Plaçais

Abstract: We review the first experiment on dynamic transport in a phase-coherent quantum conductor. In our discussion, we highlight the use of time-dependent transport as a means of gaining insight into charge relaxation on a mesoscopic scale. For this purpose, we studied the ac conductance of a model quantum conductor, i.e. the quantum RC circuit. Prior to our experimental work, M. Büttiker, H. Thomas and… ▽ More We review the first experiment on dynamic transport in a phase-coherent quantum conductor. In our discussion, we highlight the use of time-dependent transport as a means of gaining insight into charge relaxation on a mesoscopic scale. For this purpose, we studied the ac conductance of a model quantum conductor, i.e. the quantum RC circuit. Prior to our experimental work, M. Büttiker, H. Thomas and A. Prêtre first worked on dynamic mesoscopic transport in the 1990s. They predicted that the mesoscopic RC circuit can be described by a quantum capacitance related to the density of states in the capacitor and a constant charge relaxation resistance value equal to half of the resistance quantum h/2e^2, when a single mode is transmitted between the capacitance and a reservoir. By applying a microwave excitation to a gate located on top of a coherent submicronic quantum dot that is coupled to a reservoir, we validate this theoretical prediction on the ac conductance of the quantum RC circuit. Our study demonstrates that the ac conductance is directly related to the dwell time of electrons in the capacitor. Thereby, we observed a counterintuitive behavior of a quantum origin: as the transmission of the single conducting mode decreases, the resistance of the quantum RC circuit remains constant while the capacitance oscillates. △ Less

Submitted 10 October, 2012; originally announced October 2012.

Comments: 30 pages

Journal ref: Rep. Prog. Phys. 75 126504 (2012)

Hot electron cooling by acoustic phonons in graphene

Authors: A. C. Betz, F. Vialla, D. Brunel, C. Voisin, M. Picher, A. Cavanna, A. Madouri, G. Fève, J. -M. Berroir, B. Plaçais, E. Pallecchi

Abstract: We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. Thi… ▽ More We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant $Σ$ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of $Σ$, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors. △ Less

Submitted 11 August, 2012; v1 submitted 13 March, 2012; originally announced March 2012.

Comments: 5 figures

Journal ref: Phys. Rev. Lett. 109, 056805 (2012)