Showing 1–3 of 3 results for author: Piprek, J

GaN-based Bipolar Cascade Lasers with 25nm wide Quantum Wells: Simulation and Analysis

Authors: J. Piprek, G. Muziol, M. Siekacz, C. Skierbiszewski

Abstract: We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quant… ▽ More We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quantum levels. However, internal absorption, low p-cladding conductivity, and self-heating are shown to strongly limit the laser performance. △ Less

Submitted 24 June, 2021; originally announced June 2021.

Comments: 5 pages, 8 figures, submitted journal paper

Journal ref: Optical and Quantum Electronics 54, 62 (2022)

Efficiency Models for GaN-based Light-Emitting Diodes: Status and Challenges

Authors: Joachim Piprek

Abstract: Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization. This review paper provides an ov… ▽ More Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization. This review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements. △ Less

Submitted 1 November, 2020; originally announced November 2020.

Comments: submitted to MDPI Materials

Journal ref: MDPI Materials 13, 5174 (2020)

Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation

Authors: Luca Redaelli, Hans Wenzel, Joachim Piprek, Thomas Weig, Sven Einfeldt, Martin Martens, Gerrit Lükens, Ulrich T. Schwarz, Michael Kneissl

Abstract: The threshold current density of narrow (1.5 μm) ridge-waveguide InGaN multi-quantum-well laser diodes, as well as the shape of their lateral far-field patterns, strongly depend on the etch depth of the ridge waveguide. Both effects can be attributed to strong index-antiguiding. A value of the antiguiding factor R = 10 is experimentally determined near threshold by measurements of the current-depe… ▽ More The threshold current density of narrow (1.5 μm) ridge-waveguide InGaN multi-quantum-well laser diodes, as well as the shape of their lateral far-field patterns, strongly depend on the etch depth of the ridge waveguide. Both effects can be attributed to strong index-antiguiding. A value of the antiguiding factor R = 10 is experimentally determined near threshold by measurements of the current-dependent gain and refractive index spectra. The device performances are simulated self-consistently solving the Schrödinger-Poisson equations and the equations for charge transport and waveguiding. Assuming a carrier-induced index change which matches the experimentally determined antiguiding factor, both the measured high threshold current and the shape of the far-field pattern of lasers with shallow ridges can be reproduced theoretically. △ Less

Submitted 8 March, 2016; originally announced March 2016.

Comments: This is an author-created, un-copyedited version of an article accepted for publication in the IEEE Journal of Quantum Electronics. IEEE is not responsible for any errors or omissions in this version of the manuscript or any version derived from it

Journal ref: IEEE J. Quantum Electron., Vol 51, Issue 8, Article# 2000506 (2015)