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Electronic Excitations of Hematite Heteroepitaxial Films Measured by Resonant Inelastic X-Ray Scattering at the Fe L-edge
Authors:
David S. Ellis,
Ru-Pan Wang,
Deniz Wong,
Jason K. Cooper,
Christian Schulz,
Yi-De Chuang,
Yifat Piekner,
Daniel A. Grave,
Markus Schleuning,
Dennis Friedrich,
Frank M. F. de Groot,
Avner Rothschild
Abstract:
Resonant Inelastic X-Ray Scattering (RIXS) spectra of hematite were measured at the Fe L3-edge for heteroepitaxial thin films which were undoped and doped with 1% Ti, Sn or Zn, in the energy loss range in excess of 1 eV to study electronic transitions. The spectra were measured for several momentum transfers (q), conducted at both low temperature (T=14K) and room temperature. While we can not rule…
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Resonant Inelastic X-Ray Scattering (RIXS) spectra of hematite were measured at the Fe L3-edge for heteroepitaxial thin films which were undoped and doped with 1% Ti, Sn or Zn, in the energy loss range in excess of 1 eV to study electronic transitions. The spectra were measured for several momentum transfers (q), conducted at both low temperature (T=14K) and room temperature. While we can not rule out dispersive features possibly owing to propagating excitations, the coarse envelopes of the general spectra did not appreciably change shape with q, implying that the bulk of the observed L-edge RIXS intensity originates from (mostly) non-dispersive ligand field (LF) excitations. Summing the RIXS spectra over q and comparing the results at T=14 K to those at T=300 K, revealed pronounced temperature effects, including an intensity change and energy shift of the 1.4 eV peak, a broadband intensity increase of the 3-4 eV range, and higher energy features. The q-summed spectra and their temperature dependences are virtually identical for nearly all of the samples with different dopants, save for the temperature dependence of the Ti-doped sample's spectrum, which we attribute to being affected by a large number of free charge carriers. Comparing with magnetization measurements for different temperatures and dopings likewise did not show a clear correlation between the RIXS spectra and the magnetic ordering states. To clarify the excited states, we performed spin multiplet calculations which were in excellent agreement with the RIXS spectra over a wide energy range and provide detailed electronic descriptions of the excited states. The implications of these findings to the photoconversion efficiency of hematite photoanodes is discussed.
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Submitted 15 February, 2022;
originally announced February 2022.
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Film flip and transfer process to enhance light harvesting in ultrathin absorber films on specular back-reflectors
Authors:
Asaf Kay,
Barbara Scherrer,
Yifat Piekner,
Kirtiman Deo Malviya,
Daniel A Grave,
Hen Dotan,
Avner Rothschild
Abstract:
Optical interference is used to enhance light-matter interaction and harvest broadband light in ultrathin semiconductor absorber films on specular back-reflectors. However, the high-temperature processing in oxygen atmosphere required for oxide absorbers often degrades metallic back-reflectors and their specular reflectance. In order to overcome this problem, we present a newly developed film flip…
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Optical interference is used to enhance light-matter interaction and harvest broadband light in ultrathin semiconductor absorber films on specular back-reflectors. However, the high-temperature processing in oxygen atmosphere required for oxide absorbers often degrades metallic back-reflectors and their specular reflectance. In order to overcome this problem, we present a newly developed film flip and transfer process that allows for high-temperature processing without degradation of the metallic back-reflector and without the need of passivation interlayers. The film flip and transfer process improves the performance of photoanodes for photoelectrochemical water splitting comprising ultrathin (< 20 nm) hematite (Fe2O3) films on silver-gold alloy (90 at% Ag-10 at% Au) back-reflectors. We obtain specular back-reflectors with high reflectance below hematite films, which is necessary for maximizing the productive light absorption in the hematite film and minimizing non-productive absorption in the back-reflector. Furthermore, the film flip and transfer process opens up a new route to attach thin film stacks onto a wide range of substrates including flexible or temperature sensitive materials.
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Submitted 8 December, 2020;
originally announced December 2020.
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The spatial collection efficiency of photogenerated charge carriers in photovoltaic and photoelectrochemical devices
Authors:
Gideon Segev,
Hen Dotan,
David S. Ellis,
Yifat Piekner,
Dino Klotz,
Jeffrey W. Beeman,
Jason K. Cooper,
Daniel A. Grave,
Ian D. Sharp,
Avner Rothschild
Abstract:
The spatial collection efficiency portrays the driving forces and loss mechanisms in photovoltaic and photoelectrochemical devices. It is defined as the fraction of photogenerated charge carriers created at a specific point within the device that contribute to the photocurrent. In stratified planar structures, the spatial collection efficiency can be extracted out of photocurrent action spectra me…
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The spatial collection efficiency portrays the driving forces and loss mechanisms in photovoltaic and photoelectrochemical devices. It is defined as the fraction of photogenerated charge carriers created at a specific point within the device that contribute to the photocurrent. In stratified planar structures, the spatial collection efficiency can be extracted out of photocurrent action spectra measurements empirically, with few a priori assumptions. Although this method was applied to photovoltaic cells made of well-understood materials, it has never been used to study unconventional materials such as metal-oxide semiconductors that are often employed in photoelectrochemical cells. This perspective shows the opportunities that this method has to offer for investigating new materials and devices with unknown properties. The relative simplicity of the method, and its applicability to operando performance characterization, makes it an important tool for analysis and design of new photovoltaic and photoelectrochemical materials and devices.
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Submitted 8 December, 2020;
originally announced December 2020.
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Implementing strong interference in ultrathin film top absorbers for tandem solar cells
Authors:
Yifat Piekner,
Hen Dotan,
Anton Tsyganok,
Kirtiman Deo Malviya,
Daniel A. Grave,
Ofer Kfir,
Avner Rothschild
Abstract:
Strong interference in ultrathin film semiconductor absorbers on metallic back reflectors has been shown to enhance the light harvesting efficiency of solar cell materials. However, metallic back reflectors are not suitable for tandem cell configurations because photons cannot be transmitted through the device. Here, we introduce a method to implement strong interference in ultrathin film top abso…
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Strong interference in ultrathin film semiconductor absorbers on metallic back reflectors has been shown to enhance the light harvesting efficiency of solar cell materials. However, metallic back reflectors are not suitable for tandem cell configurations because photons cannot be transmitted through the device. Here, we introduce a method to implement strong interference in ultrathin film top absorbers in a tandem cell configuration through use of distributed Bragg reflectors (DBRs). We showcase this by designing and fabricating a photoelectrochemical-photovoltaic (PEC-PV) stacked tandem cell in a V-shaped configuration where short wavelength photons are reflected back to the photoanode material (hematite, Fe2O3), whereas long wavelength photons are transmitted to the bottom silicon PV cell. We employ optical simulations to determine the optimal thicknesses of the DBR layers and the V-shape angle to maximize light absorption in the ultrathin (10 nm thick) hematite film. The DBR spectral response can be tailored to allow for a more than threefold enhancement in absorbed photons compared to a layer of the same thickness on transparent current collectors. Using a DBR to couple a bottom silicon PV cell with an ultrathin hematite top PEC cell, we demonstrate unassisted solar water splitting and show that DBRs can be designed to enhance strong interference in ultrathin films while enabling stacked tandem cell configuration.
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Submitted 8 December, 2020;
originally announced December 2020.
