Phase diagrams and polarization reversal in nanosized Hf$_x$Zr$_{1-x}$O$_{2-y}$
Authors:
Eugene A. Eliseev,
Yuri O. Zagorodniy,
Victor N. Pavlikov,
Oksana V. Leshchenko,
Hanna V. Shevliakova,
Miroslav V. Karpec,
Andrei D. Yaremkevych,
Olena M. Fesenko,
Sergei V. Kalinin,
Anna N. Morozovska
Abstract:
To describe the polar properties of the nanosized HfxZr1-xO2-y, we evolve the "effective" Landau-Ginzburg-Devonshire (LGD) model based on the parametrization of the Landau expansion coefficients for the polar and antipolar orderings. We have shown that the effective LGD model can predict the influence of screening conditions and size effects on phase diagrams, polarization reversal and structural…
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To describe the polar properties of the nanosized HfxZr1-xO2-y, we evolve the "effective" Landau-Ginzburg-Devonshire (LGD) model based on the parametrization of the Landau expansion coefficients for the polar and antipolar orderings. We have shown that the effective LGD model can predict the influence of screening conditions and size effects on phase diagrams, polarization reversal and structural properties of the nanosized HfxZr1-xO2-y of various shape and sizes. To verify the model, we use available experimental results for HfxZr1-xO2 thin films and oxygen-deficient HfO2-y nanoparticles prepared at different annealing conditions. X-ray diffraction, which was used to determine the phase composition of the HfO2-y nanoparticles, revealed the formation of the ferroelectric orthorhombic phase in them. Micro-Raman spectroscopy was used to explore the correlation of lattice dynamics and structural changes appearing in dependence on the oxygen vacancies concentration in the HfO2-y nanoparticles. Since our approach allows to determine the conditions (shape, sizes, Zr content and/or oxygen vacancies amount) for which the nanosized HfxZr1-xO2-y are ferroelectrics or antiferroelectrics, we hope that obtained results are useful for creation of next generation of Si-compatible ferroelectric gate oxide nanomaterials.
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Submitted 19 March, 2024; v1 submitted 28 February, 2024;
originally announced February 2024.
Mechanisms of magnetoelectricity in manganese doped incipient ferroelectrics
Authors:
R. O. Kuzian,
V. V. Laguta,
A. -M. Dare,
I. V. Kondakova,
M. Marysko,
L. Raymond,
E. P. Garmash,
V. N. Pavlikov,
A. Tkach,
P. M. Vilarinho,
R. Hayn
Abstract:
We report magnetization measurements and magnetic resonance data for SrTiO3 doped by manganese. We show that the recently reported coexistent spin and dipole glass (multiglass) behaviours are strongly affected by the distribution of Mn ions between the Sr and Ti sites. Motivated by this finding we calculate the magnetic interactions between Mn impurities of different kinds. Both LSDA+U and many-bo…
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We report magnetization measurements and magnetic resonance data for SrTiO3 doped by manganese. We show that the recently reported coexistent spin and dipole glass (multiglass) behaviours are strongly affected by the distribution of Mn ions between the Sr and Ti sites. Motivated by this finding we calculate the magnetic interactions between Mn impurities of different kinds. Both LSDA+U and many-body perturbation theory evidence that magnetic and magnetoelectric interactions are mediated by Mn$_B^{4+}$ ions substituting for Ti. We propose two microscopic magnetoelectric coupling mechanisms, which can be involved in all magnetoelectric systems based on incipient ferroelectrics. In the first one, the electric field modifies the spin susceptibility via spin-strain coupling of Mn$_{B}^{4+}$. The second mechanism concerns Mn pairs coupled by the position-dependent exchange interaction.
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Submitted 27 September, 2010; v1 submitted 3 July, 2010;
originally announced July 2010.
