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Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure
Authors:
Asraful Haque,
Suman Kumar Mandal,
Shubham Kumar Parate,
Harshal Jason Dsouza,
Sakshi Chandola,
Pavan Nukala,
Srinivasan Raghavan
Abstract:
Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene. The resulting film can be exfoliated to form a freestanding membrane, and the substrate, if expensive, can be reused. However, atomically thin 2-D m…
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Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene. The resulting film can be exfoliated to form a freestanding membrane, and the substrate, if expensive, can be reused. However, atomically thin 2-D materials are susceptible to damage before and during film growth in the chamber, leading to a poor epitaxy. Oxide remote epitaxy using graphene, the most commonly available 2D material, is particularly challenging because the conventional conditions employed for the growth of epitaxial oxides also degrade graphene. In this study, we show for the first time that a direct correlation exists between the microstructure of graphene, its getting defective on exposure to the pulsed laser deposition plume, and the crystalline quality of the barium titanate film deposited on top. A controlled aperture method was used to reduce graphene damage. Even so, the degree of damage is more at the graphene grain boundaries than within the grains. Large grain-sized greater than 300 microns, graphene suffered less damage and yielded a film comparable to that grown directly on a strontium titanate substrate with a rocking curve half width of 0.6 degrees. Using large grain-sized bi-layer graphene, 4 mm x 5 mm oxide layers were successfully exfoliated and transferred onto SiOx-Si. These insights pave the way for the heterogeneous integration of functional oxides on foreign substrates, holding significant implications for commercializing perovskite oxides by integrating them with Si-CMOS and flexible electronics.
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Submitted 15 August, 2024;
originally announced August 2024.
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Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si
Authors:
Binoy Krishna De,
V. G. Sathe,
Divya,
Pragati Sharma,
Shubham Kumar Parate,
Hemant Singh Kunwar,
Pavan Nukala,
S. B. Roy
Abstract:
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by minimal external field at room temperature is of paramount research and technological interest. Mott-IMT is often associated with structural modification,…
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Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by minimal external field at room temperature is of paramount research and technological interest. Mott-IMT is often associated with structural modification, which is very important for optoelectronic and actuator applications. Here, we report a giant resistive switching of about 900 % at room temperature in disordered polycrystalline V2O3-Si thin film stabilized at the IMT phase boundary and associated structural transformation under a small electric field. The increase of electron population in the a1g band under the field is responsible for the Mott gap collapse that drives the structural transition. Furthermore, we also fabricated a room temperature Mott-FET with a channel ON/OFF resistive ratio of about 15. This study provides a fundamental mechanism of the Mott-IMT in V2O3 as well as its device applications.
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Submitted 17 July, 2024;
originally announced July 2024.
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Heterogeneous integration of high endurance ferroelectric and piezoelectric epitaxial BaTiO$_3$ devices on Si
Authors:
Asraful Haque,
Harshal Jason D'Souza,
Shubham Kumar Parate,
Rama Satya Sandilya,
Srinivasan Raghavan,
Pavan Nukala
Abstract:
Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal substrates followed by transfer to a desired substrate show promise of achieving excellent device-quality films. However, beyond simple demonstrations of t…
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Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal substrates followed by transfer to a desired substrate show promise of achieving excellent device-quality films. However, beyond simple demonstrations of the existence of ferroelectricity, robust devices with high endurance were not yet demonstrated on Si using the latter approach. Here, using a novel two-step approach to synthesize epitaxial BTO using pulsed laser deposition (PLD) on water soluble Sr3Al2O7 (SAO) (on SrTiO$_3$ (STO) substrates), we demonstrate successful integration of high-quality BTO capacitors on Si, with Pr of 7 uC/cm2, Ec 150 kV/cm, ferroelectric and electromechanical endurance of greater than $10^6$ cycles. We further address the challenge of cracking and disintegration of thicker films by first transferring a large area (5 mm x 5 mm) of the templated layer of BTO (~30 nm thick) on the desired substrate, followed by the growth of high-quality BTO on this substrate, as revealed by HRXRD and HRSTEM measurements. These templated Si substrates offer a versatile platform for integrating any epitaxial complex oxides with diverse functionalities onto any inorganic substrate.
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Submitted 15 July, 2024;
originally announced July 2024.
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Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition
Authors:
Jalaja M A,
Shubham Kumar Parate,
Binoy Krishna De,
Sai Dutt K,
Pavan Nukala
Abstract:
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates for the same. By exploiting the Mott metal-insulator transition (MIT) of TiOx(Ny), the bottom electrode, we engineer a depolarization field controlled…
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On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates for the same. By exploiting the Mott metal-insulator transition (MIT) of TiOx(Ny), the bottom electrode, we engineer a depolarization field controlled reversible polar to non-polar phase transition in thick La-doped hafnia (40 nm). This transition occurs between ~125 and 140 K and produces giant negative pyroelectric and electrocaloric effects. Refrigeration metrics were estimated between 120 to 200 K, with a peak refrigerant capacity of 25 kJ Kg-1 (2 kJ Kg-1), peak isothermal entropy ΔS~ 8 kJ Kg-1 K-1 (0.5 kJ Kg-1 K-1) and adiabatic ΔTcooling ~ 106 K (11 K) at ~140 K and 5 MV cm-1 (0.5 MV cm-1, and these are the largest reported in any electrocaloric system. Our work fundamentally proposes design guidelines to induce significant solid-state refrigeration through proximity effects, even at cryogenic temperatures relevant to quantum technologies.
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Submitted 27 March, 2024;
originally announced March 2024.
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Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100
Authors:
Sandeep Vura,
Shubham Kumar Parate,
Subhajit Pal,
Upanya Khandelwal,
Rajeev Kumar Rai,
Sri Harsha Molleti,
Vishnu Kumar,
Rama Satya Sandilya Ventrapragada,
Girish Patil,
Mudit Jain,
Ambresh Mallya,
Majid Ahmadi,
Bart Kooi,
Sushobhan Avasthi,
Rajeev Ranjan,
Srinivasan Raghavan,
Saurabh Chandorkar,
Pavan Nukala
Abstract:
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values o…
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Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04 x 10-14 m2 per V2 at 1 kHz, and 3.87 x 10-15 m2 per V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained even after cycling the devices >5000 times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates very well with the observed giant electrostrictive response. These films show large coefficient of thermal expansion (2.36 x 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.
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Submitted 6 March, 2023;
originally announced March 2023.
