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Correlation of Blocking and Néel Temperatures in Ultra-thin Metallic Antiferromagnets
Authors:
Kutay Akin,
Hasan Piskin,
Ege Selvi,
Emre Demircanli,
Sevval Ari,
Mohammad Hassan Ramezan zadeh,
Bayram Kocaman,
Ozhan Ozatay
Abstract:
Nonvolatile spintronics-based devices that utilize electron spin both to store and transport information face a great challenge when scaled to nano dimensions due to loss of thermal stability and stray field induced disturbance in closely packed magnetic bits. The potential replacement of ferromagnetic materials with antiferromagnets may overcome some of these issues owing to the superior robustne…
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Nonvolatile spintronics-based devices that utilize electron spin both to store and transport information face a great challenge when scaled to nano dimensions due to loss of thermal stability and stray field induced disturbance in closely packed magnetic bits. The potential replacement of ferromagnetic materials with antiferromagnets may overcome some of these issues owing to the superior robustness of sublattice spin orientations to magnetic field disturbance as long as theyare kept well below the Néel temperature, which is hard to measure with conventional methods, especially in the ultrathin limit. In this work, we have employed spin pumping from a soft ferromagnetic NiFe layer into widely used ultrathin metallic antiferromagnet Ir20Mn80, FeMn, PtMn, PdMn or NiMn with thicknesses in the 0.7-3 nm range, as a probe to detect damping enhancement during magnetic phase transitions. Independent measurements of the blocking temperature with magnetometry reveal that temperature dependent shifts in the resonance peaks can also be used to measure the blocking temperature, allowing the analysis of the correlation between the Néel and blocking temperatures in trilayers with permalloy and antiferromagnetic layer separated by a 3 nm thick spacer layer. The thickness dependent characterization of thermal stability in antiferromagnets provides a key element for scalable and ultrafast antiferromagnetic spintronics.
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Submitted 27 September, 2023;
originally announced September 2023.
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Anomalous Hall and Nernst Effects in FeRh
Authors:
Hilal Saglam,
Changjiang Liu,
Yi Li,
Joseph Sklenar,
Jonathan Gibbons,
Deshun Hong,
Vedat Karakas,
John E. Pearson,
Ozhan Ozatay,
Wei Zhang,
Anand Bhattacharya,
Axel Hoffmann
Abstract:
Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transition. Epitaxial FeRh films grown on MgO (001) substrates exhibit a clear magnetic and electronic phase transition. By performing anomalous Hall and an…
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Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transition. Epitaxial FeRh films grown on MgO (001) substrates exhibit a clear magnetic and electronic phase transition. By performing anomalous Hall and anomalous Nernst effect measurements over a wide range of temperatures, we demonstrate that the thermally driven transition shows distinctly different transverse transport on both side of the phase transition. Particularly, a sign change of both anomalous Hall and Nernst signals is observed.
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Submitted 28 December, 2020;
originally announced December 2020.
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Magnetic damping modulation in $IrMn_{3}/Ni_{80}Fe_{20}$ via the magnetic spin Hall effect
Authors:
Jose Holanda,
Hilal Saglam,
Vedat Karakas,
Zhizhi Zang,
Yi Li,
Ralu Divan,
Yuzi Liu,
Ozhan Ozatay,
Valentine Novosad,
John E. Pearson,
Axel Hoffmann
Abstract:
Non-collinear antiferromagnets can have additional spin Hall effects due to the net chirality of their magnetic spin structure, which provides for more complex spin-transport phenomena compared to ordinary non-magnetic materials. Here we investigated how ferromagnetic resonance of permalloy ($Ni_{80}Fe_{20}$) is modulated by spin Hall effects in adjacent epitaxial $IrMn_{3}$ films. We observe a la…
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Non-collinear antiferromagnets can have additional spin Hall effects due to the net chirality of their magnetic spin structure, which provides for more complex spin-transport phenomena compared to ordinary non-magnetic materials. Here we investigated how ferromagnetic resonance of permalloy ($Ni_{80}Fe_{20}$) is modulated by spin Hall effects in adjacent epitaxial $IrMn_{3}$ films. We observe a large dc modulation of the ferromagnetic resonance linewidth for currents applied along the [001] $IrMn_{3}$ direction. This very strong angular dependence of spin-orbit torques from dc currents through the bilayers can be explained by the magnetic spin Hall effect where $IrMn_{3}$ provides novel pathways for modulating magnetization dynamics electrically.
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Submitted 3 November, 2019;
originally announced November 2019.
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Giant anisotropy of Gilbert damping in epitaxial CoFe films
Authors:
Yi Li,
Fanlong Zeng,
Steven S. -L. Zhang,
Hyeondeok Shin,
Hilal Saglam,
Vedat Karakas,
Ozhan Ozatay,
John E. Pearson,
Olle G. Heinonen,
Yizheng Wu,
Axel Hoffmann,
Wei Zhang
Abstract:
Tailoring Gilbert damping of metallic ferromagnetic thin films is one of the central interests in spintronics applications. Here we report a giant Gilbert damping anisotropy in epitaxial Co$_{50}$Fe$_{50}$ thin film with a maximum-minimum damping ratio of 400 \%, determined by broadband spin-torque as well as inductive ferromagnetic resonance. We conclude that the origin of this damping anisotropy…
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Tailoring Gilbert damping of metallic ferromagnetic thin films is one of the central interests in spintronics applications. Here we report a giant Gilbert damping anisotropy in epitaxial Co$_{50}$Fe$_{50}$ thin film with a maximum-minimum damping ratio of 400 \%, determined by broadband spin-torque as well as inductive ferromagnetic resonance. We conclude that the origin of this damping anisotropy is the variation of the spin orbit coupling for different magnetization orientations in the cubic lattice, which is further corroborate from the magnitude of the anisotropic magnetoresistance in Co$_{50}$Fe$_{50}$.
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Submitted 7 January, 2019;
originally announced January 2019.
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Three-Dimensional Magnetic Page Memory
Authors:
Ozhan Ozatay,
Aisha Gokce,
Thomas Hauet,
Liesl Folks,
Anna Giordano,
Giovanni Finocchio
Abstract:
The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the difficulties in fabricating small grain recording media while maintaining thermal stability and a high signal-to-noise ratio motivate development of alternative m…
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The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the difficulties in fabricating small grain recording media while maintaining thermal stability and a high signal-to-noise ratio motivate development of alternative methods, such as the patterning of magnetic nano-islands and utilizing energy-assist for future applications. In addition, both from sensor and memory perspective three-dimensional spintronic devices are highly desirable to overcome the restrictions on the functionality in the planar structures. Here we demonstrate a three-dimensional magnetic-memory (magnetic page memory) based on thermally assisted and stray-field induced transfer of domains in a vertical stack of magnetic nanowires with perpendicular anisotropy. Using spin-torque induced domain shifting in such a device with periodic pinning sites provides additional degrees of freedom by allowing lateral information flow to realize truly three-dimensional integration.
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Submitted 29 March, 2018;
originally announced March 2018.
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Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy
Authors:
Vedat Karakas,
Aisha Gokce,
Ali Taha Habiboglu,
Sevdenur Arpaci,
Kaan Ozbozduman,
Ibrahim Cinar,
Cenk Yanik,
Riccardo Tomasello,
Silvia Tacchi,
Giulio Siracusano,
Mario Carpentieri,
Giovanni Finocchio,
Thomas Hauet,
Ozhan Ozatay
Abstract:
Recently discovered exotic magnetic configurations, namely magnetic solitons appearing in the presence of bulk or interfacial Dzyaloshinskii-Moriya Interaction (i-DMI), have excited scientists to explore their potential applications in emerging spintronic technologies such as race-track magnetic memory, spin logic, radio frequency nano-oscillators and sensors. Such studies are motivated by their f…
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Recently discovered exotic magnetic configurations, namely magnetic solitons appearing in the presence of bulk or interfacial Dzyaloshinskii-Moriya Interaction (i-DMI), have excited scientists to explore their potential applications in emerging spintronic technologies such as race-track magnetic memory, spin logic, radio frequency nano-oscillators and sensors. Such studies are motivated by their foreseeable advantages over conventional micro-magnetic structures due to their small size, topological stability and easy spin-torque driven manipulation with much lower threshold current densities giving way to improved storage capacity, and faster operation with efficient use of energy. In this work, we show that in the presence of i-DMI in Pt/CoFeB/Ti multilayers by tuning the magnetic anisotropy (both in-plane and perpendicular-to-plane) via interface engineering and postproduction treatments, we can stabilize a variety of magnetic configurations such as Néel skyrmions, horseshoes and most importantly for the first time, the recently predicted isolated radial vortices at room temperature and under zero bias field. Especially, the radial vortex state with its absolute convergence to or divergence from a single point can potentially offer exciting new applications such as particle trapping/detrapping in addition to magnetoresistive memories with efficient switching, where the radial vortex state can act as a source of spin-polarized current with radial polarization.
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Submitted 8 September, 2017;
originally announced September 2017.
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Magnetic radial vortex stabilization and efficient manipulation driven by the Dzyaloshinskii Moriya Interaction and the spin-transfer torque
Authors:
G. Siracusano,
R. Tomasello A. Giordano,
V. Puliafito,
B. Azzerboni,
O. Ozatay,
M. Carpentieri,
G. Finocchio
Abstract:
Solitons are very promising for the design of next generation of ultralow power devices for storage and computation. The key ingredient to achieve this goal is the fundamental understanding of their stabilization and manipulation. Here, we show how the interfacial Dzyaloshinskii Moriya Interaction (i DMI) is able to lift the energy degeneracy of a magnetic vortex state by stabilizing a topological…
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Solitons are very promising for the design of next generation of ultralow power devices for storage and computation. The key ingredient to achieve this goal is the fundamental understanding of their stabilization and manipulation. Here, we show how the interfacial Dzyaloshinskii Moriya Interaction (i DMI) is able to lift the energy degeneracy of a magnetic vortex state by stabilizing a topological soliton with radial chirality, hereafter called radial vortex. It has a non-integer skyrmion number S (0.5<|S|<1) due to both the vortex core polarity and the magnetization tilting induced by the i DMI boundary conditions. Micromagnetic simulations predict that a magnetoresistive memory based on the radial vortex state in both free and polarizer layers can be efficiently switched by a threshold current density smaller than 106 A/cm2. The switching processes occur via the nucleation of topologically connected vortices and vortex antivortex pairs, followed by spin wave emissions due to vortex antivortex annihilations.
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Submitted 27 July, 2016; v1 submitted 30 January, 2016;
originally announced February 2016.
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Electrical Switching Dynamics in Circular and Rectangular Ge2Sb2Te5 Nanopillar Phase Change Memory Devices
Authors:
Ozhan Ozatay,
Barry Stipe,
Jordan Katine,
Bruce Terris
Abstract:
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the heating scheme and the details of the contact geometry play the dominant role in determining the final phase co…
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We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the heating scheme and the details of the contact geometry play the dominant role in determining the final phase composition of the device such that a non-uniform heating scheme promotes partial amorphization/crystallization for a wide range of pulse parameters enabling multiple resistance levels for data storage applications. Furthermore we find that fluctuations in the snap-back voltage and set/reset resistances in repeated switching experiments are related to the details of the current distribution such that a uniform current injection geometry (i.e. circular contact) favors more reproducible switching parameters. This shows that possible geometrical defects in nanoscale phase change memory devices may play an essential role in the performance of the smallest possible devices through modification of the exact current distribution in the active chalcogenide layer. We present a three-dimensional finite element model of the electro-thermal physics to provide insights into the underlying physical mechanisms of the switching dynamics as well as to quantitatively account for the scaling behaviour of the switching currents in both circular and rectangular contact geometries. The calculated temporal evolution of the heat distribution within the pulse duration shows distinct features in rectangular contacts providing evidence for locally hot spots at the sharp corners of the current injection site due to current crowding effects leading to the observed behaviour.
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Submitted 17 September, 2008;
originally announced September 2008.
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Spin-Torque-Induced Rotational Dynamics of a Magnetic Vortex Dipole
Authors:
G. Finocchio,
O. Ozatay,
L. Torres,
R. A. Buhrman,
D. C. Ralph,
B. Azzerboni
Abstract:
We study, both experimentally and by numerical modeling, the magnetic dynamics that can be excited in a magnetic thin-film nanopillar device using the spin torque from a spatially localized current injected via a 10s-of-nm-diameter aperture. The current-driven magnetic dynamics can produce large amplitude microwave emission at zero magnetic field, with a frequency well below that of the uniform…
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We study, both experimentally and by numerical modeling, the magnetic dynamics that can be excited in a magnetic thin-film nanopillar device using the spin torque from a spatially localized current injected via a 10s-of-nm-diameter aperture. The current-driven magnetic dynamics can produce large amplitude microwave emission at zero magnetic field, with a frequency well below that of the uniform ferromagnetic resonance mode. Micromagnetic simulations indicate that the physical origin of this efficient microwave nano-oscillator is the nucleation and subsequent steady-state rotational dynamics of a magnetic vortex dipole driven by the localized spin torque. These results show this novel implementation of a spintronic nano-oscillator is a promising candidate for microwave technology applications.
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Submitted 15 October, 2008; v1 submitted 29 July, 2008;
originally announced July 2008.
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Scaling Properties of Critical Phase Change Conditions in Ge2Sb2Te5 Nanopillars
Authors:
O. Ozatay,
B. Stipe,
J. A. Katine,
B. D. Terris
Abstract:
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the cooling scheme and the details of the contact geometry play the dominant role in determining the final phase co…
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We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the cooling scheme and the details of the contact geometry play the dominant role in determining the final phase composition of the device. A three-dimensional finite element model of the electro-thermal physics not only provides good insights into the underlying physical mechanisms of the switching dynamics but also quantitatively accounts for the observed scaling behaviour.
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Submitted 28 April, 2008;
originally announced April 2008.
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Effects of rf Current on Spin Transfer Torque Induced Dynamics
Authors:
S. H. Florez,
J. A. Katine,
M. Carey,
L. Folks,
O. Ozatay,
B. D. Terris
Abstract:
The impact of radiofrequency (rf) currents on the direct current (dc) driven switching dynamics in current-perpendicular-to-plane nanoscale spin valves is demonstrated. The rf currents dramatically alter the dc driven free layer magnetization reversal dynamics as well as the dc switching level. This occurs when the frequency of the rf current is tuned to a frequency range around the dc driven ma…
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The impact of radiofrequency (rf) currents on the direct current (dc) driven switching dynamics in current-perpendicular-to-plane nanoscale spin valves is demonstrated. The rf currents dramatically alter the dc driven free layer magnetization reversal dynamics as well as the dc switching level. This occurs when the frequency of the rf current is tuned to a frequency range around the dc driven magnetization precession frequencies. For these frequencies, interactions between the dc driven precession and the injected rf induce frequency locking and frequency pulling effects that lead to a measurable dependence of the critical switching current on the frequency of the injected rf. Based on macrospin simulations, including dc as well as rf spin torque currents, we explain the origin of the observed effects.
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Submitted 14 April, 2008; v1 submitted 26 March, 2008;
originally announced March 2008.
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Strong linewidth variation for spin-torque nano-oscillators as a function of in-plane magnetic field angle
Authors:
K. V. Thadani,
G. Finocchio,
Z. -P. Li,
O. Ozatay,
J. C. Sankey,
I. N. Krivorotov,
Y. -T. Cui,
R. A. Buhrman,
D. C. Ralph
Abstract:
We measure the microwave signals produced by spin-torque-driven magnetization dynamics in patterned magnetic multilayer devices at room temperature, as a function of the angle of a magnetic field applied in the sample plane. We find strong variations in the frequency linewidth of the signals, with a decrease by more than a factor of 20 as the field is rotated from the magnetic easy axis to the i…
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We measure the microwave signals produced by spin-torque-driven magnetization dynamics in patterned magnetic multilayer devices at room temperature, as a function of the angle of a magnetic field applied in the sample plane. We find strong variations in the frequency linewidth of the signals, with a decrease by more than a factor of 20 as the field is rotated from the magnetic easy axis to the in-plane hard axis. Based on micromagnetic simulations, we identify these variations as due to a transition from spatially incoherent to coherent precession.
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Submitted 19 March, 2008;
originally announced March 2008.
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Enhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve
Authors:
P. M. Braganca,
O. Ozatay,
A. G. F. Garcia,
O. J. Lee,
D. C. Ralph,
R. A. Buhrman
Abstract:
We examine the effect a spatially non-uniform spin current with a component polarized partially out of the plane has on a low saturation magnetization nanomagnet free layer. Micromagnetic simulations indicate that the spin torque efficiency acting upon the reversing nanomagnet can be enhanced through this process, resulting in faster switching with smaller currents. In doing so, we determine tha…
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We examine the effect a spatially non-uniform spin current with a component polarized partially out of the plane has on a low saturation magnetization nanomagnet free layer. Micromagnetic simulations indicate that the spin torque efficiency acting upon the reversing nanomagnet can be enhanced through this process, resulting in faster switching with smaller currents. In doing so, we determine that micromagnetic structure within the nanomagnets can be beneficial for reversal processes. We verify this enhancement experimentally in devices with a tapered nanopillar geometry that generates a spin current polarized partly out of plane. Finally, to take even better advantage of these effects, we examine micromagnetically the benefits of a tapered three-magnetic-layer structure that further reduces reversal times while maintaining the thermal stability of the free layer.
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Submitted 15 November, 2007;
originally announced November 2007.
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Spin-Torque Ferromagnetic Resonance Measurements of Damping in Nanomagnets
Authors:
G. D. Fuchs,
J. C. Sankey,
V. S. Pribiag,
L. Qian,
P. M. Braganca,
A. G. F. Garcia,
E. M. Ryan,
Zhi-Pan Li,
O. Ozatay,
D. C. Ralph,
R. A. Buhrman
Abstract:
We measure the magnetic damping parameter a in thin film CoFeB and permalloy (Py) nanomagnets at room temperature using ferromagnetic resonance driven by microwave frequency spin-transfer torque. We obtain $α_{CoFeB} = 0.014 \pm 0.003$ and $α_{Py}=0.010 \pm 0.002$, values comparable to measurements for extended thin films, but significantly less than the effective damping determined previously f…
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We measure the magnetic damping parameter a in thin film CoFeB and permalloy (Py) nanomagnets at room temperature using ferromagnetic resonance driven by microwave frequency spin-transfer torque. We obtain $α_{CoFeB} = 0.014 \pm 0.003$ and $α_{Py}=0.010 \pm 0.002$, values comparable to measurements for extended thin films, but significantly less than the effective damping determined previously for similar nanomagnets by fits to time-domain studies of large-angle magnetic excitations and magnetic reversal. The greater damping found for the large amplitude nanomagnet dynamics is attributed to the nonlinear excitation of non-uniform magnetic modes.
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Submitted 22 March, 2007;
originally announced March 2007.
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Magnetic vortex oscillator driven by dc spin-polarized current
Authors:
V. S. Pribiag,
I. N. Krivorotov,
G. D. Fuchs,
P. M. Braganca,
O. Ozatay,
J. C. Sankey,
D. C. Ralph,
R. A. Buhrman
Abstract:
Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a nanomagnet by applying a dc current, has previously been reported only for spatially uniform nanomagnets. Here we demonstrate that a quintessentially nonunifor…
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Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a nanomagnet by applying a dc current, has previously been reported only for spatially uniform nanomagnets. Here we demonstrate that a quintessentially nonuniform magnetic structure, a magnetic vortex, isolated within a nanoscale spin valve structure, can be excited into persistent microwave-frequency oscillations by a spin-polarized dc current. Comparison to micromagnetic simulations leads to identification of the oscillations with a precession of the vortex core. The oscillations, which can be obtained in essentially zero magnetic field, exhibit linewidths that can be narrower than 300 kHz, making these highly compact spin-torque vortex oscillator devices potential candidates for microwave signal-processing applications, and a powerful new tool for fundamental studies of vortex dynamics in magnetic nanostructures.
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Submitted 9 February, 2007;
originally announced February 2007.
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Time-Resolved Spin Torque Switching and Enhanced Damping in Py/Cu/Py Spin-Valve Nanopillars
Authors:
N. C. Emley,
I. N. Krivorotov,
A. G. F. Garcia,
O. Ozatay,
J. C. Sankey,
D. C. Ralph,
R. A. Buhrman
Abstract:
We report time-resolved measurements of current-induced reversal of a free magnetic layer in Py/Cu/Py elliptical nanopillars at temperatures T = 4.2 K to 160 K. Comparison of the data to Landau-Lifshitz-Gilbert macrospin simulations of the free layer switching yields numerical values for the spin torque and the Gilbert damping parameters as functions of T. The damping is strongly T-dependent, wh…
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We report time-resolved measurements of current-induced reversal of a free magnetic layer in Py/Cu/Py elliptical nanopillars at temperatures T = 4.2 K to 160 K. Comparison of the data to Landau-Lifshitz-Gilbert macrospin simulations of the free layer switching yields numerical values for the spin torque and the Gilbert damping parameters as functions of T. The damping is strongly T-dependent, which we attribute to the antiferromagnetic pinning behavior of a thin permalloy oxide layer around the perimeter of the free layer. This adventitious antiferromagnetic pinning layer can have a major impact on spin torque phenomena.
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Submitted 1 November, 2005; v1 submitted 31 October, 2005;
originally announced October 2005.
