Showing 1–7 of 7 results for author: Ooi, Z

Electrical control of valley polarized charged biexcitons in monolayer WS$_2$

Authors: Sarthak Das, Ding Huang, Ivan Verzhbitskiy, Zi-En Ooi, Chit Siong Lau, Rainer Lee, Calvin Pei Yu Wong, Kuan Eng Johnson Goh

Abstract: Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic control of valley polarization in charged biexciton (quinton) states of mon… ▽ More Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic control of valley polarization in charged biexciton (quinton) states of monolayer tungsten disulfide, achieving up to a sixfold increase in the degree of circular polarization under off-resonant excitation. In contrast to the weak direct tuning of excitons typically observed using electrical gating, the quinton photoluminescence remains stable, even with increased scattering from electron doping. By exciting at the exciton resonances, we observed the reproducible non-monotonic switching of the charged state population as the electron doping is varied under gate bias, indicating a coherent interplay between neutral and charged exciton states. △ Less

Submitted 15 April, 2024; originally announced April 2024.

Constructing Custom Thermodynamics Using Deep Learning

Authors: Xiaoli Chen, Beatrice W. Soh, Zi-En Ooi, Eleonore Vissol-Gaudin, Haijun Yu, Kostya S. Novoselov, Kedar Hippalgaonkar, Qianxiao Li

Abstract: One of the most exciting applications of artificial intelligence (AI) is automated scientific discovery based on previously amassed data, coupled with restrictions provided by known physical principles, including symmetries and conservation laws. Such automated hypothesis creation and verification can assist scientists in studying complex phenomena, where traditional physical intuition may fail. H… ▽ More One of the most exciting applications of artificial intelligence (AI) is automated scientific discovery based on previously amassed data, coupled with restrictions provided by known physical principles, including symmetries and conservation laws. Such automated hypothesis creation and verification can assist scientists in studying complex phenomena, where traditional physical intuition may fail. Here we develop a platform based on a generalized Onsager principle to learn macroscopic dynamical descriptions of arbitrary stochastic dissipative systems directly from observations of their microscopic trajectories. Our method simultaneously constructs reduced thermodynamic coordinates and interprets the dynamics on these coordinates. We demonstrate its effectiveness by studying theoretically and validating experimentally the stretching of long polymer chains in an externally applied field. Specifically, we learn three interpretable thermodynamic coordinates and build a dynamical landscape of polymer stretching, including the identification of stable and transition states and the control of the stretching rate. Our general methodology can be used to address a wide range of scientific and technological applications. △ Less

Submitted 22 December, 2023; v1 submitted 8 August, 2023; originally announced August 2023.

Comments: Fix figure visibility issue

Tailoring Interlayer Charge Transfer Dynamics in 2D Perovskites with Electroactive Spacer Molecules

Authors: Yorrick Boeije, Wouter T. M. Van Gompel, Youcheng Zhang, Pratyush Ghosh, Szymon J. Zelewski, Arthur Maufort, Bart Roose, Zher Ying Ooi, Rituparno Chowdhury, Ilan Devroey, Stijn Lenaers, Alasdair Tew, Linjie Dai, Krishanu Dey, Hayden Salway, Richard H. Friend, Henning Sirringhaus, Laurence Lutsen, Dirk Vanderzande, Akshay Rao, Samuel D. Stranks

Abstract: The family of hybrid organic-inorganic lead-halide perovskites are the subject of intense interest for optoelectronic applications, from light-emitting diodes to photovoltaics to X-ray detectors. Due to the inert nature of most organic molecules, the inorganic sublattice generally dominates the electronic structure and therefore optoelectronic properties of perovskites. Here, we use optically and… ▽ More The family of hybrid organic-inorganic lead-halide perovskites are the subject of intense interest for optoelectronic applications, from light-emitting diodes to photovoltaics to X-ray detectors. Due to the inert nature of most organic molecules, the inorganic sublattice generally dominates the electronic structure and therefore optoelectronic properties of perovskites. Here, we use optically and electronically active carbazole-based Cz-Ci molecules, where Ci indicates an alkylammonium chain and i indicates the number of CH2 units in the chain, varying from 3-5, as cations in the 2D perovskite structure. By investigating the photophysics and charge transport characteristics of (Cz-Ci)2PbI4, we demonstrate a tunable electronic coupling between the inorganic lead-halide and organic layers. The strongest interlayer electronic coupling was found for (Cz-C3)2PbI4, where photothermal deflection spectroscopy results remarkably demonstrate an organic-inorganic charge transfer state. Ultrafast transient absorption spectroscopy measurements demonstrate ultrafast hole transfer from the photoexcited lead-halide layer to the Cz-Ci molecules, the efficiency of which increases by varying the chain length from i=5 to i=3. The charge transfer results in long-lived carriers (10-100 ns) and quenched emission, in stark contrast with the fast (sub-ns) and efficient radiative decay of bound excitons in the more conventional 2D perovskite (PEA)2PbI4, in which phenylethylammonium (PEA) acts as an inert spacer. Electrical charge transport measurements further support enhanced interlayer coupling, showing increased out-of-plane carrier mobility from i=5 to i=3. This study paves the way for the rational design of 2D perovskites with combined inorganic-organic electronic proper-ties through the wide range of functionalities available in the world of organics. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Comments: 16 main text pages + 20 supplemental text pages, 5 main text figures + 19 supplemental figures

Automated Electrokinetic Stretcher for Manipulating Nanomaterials

Authors: Beatrice W. Soh, Zi-En Ooi, Eleonore Vissol-Gaudin, Chang Jie Leong, Kedar Hippalgaonkar

Abstract: In this work, we present an automated platform for trapping and stretching individual micro- and nanoscale objects in solution using electrokinetic forces. The platform can trap objects at the stagnation point of a planar elongational electrokinetic field for long time scales, as demonstrated by the trapping of ~100 nanometer polystyrene beads and DNA molecules for minutes, with a standard deviati… ▽ More In this work, we present an automated platform for trapping and stretching individual micro- and nanoscale objects in solution using electrokinetic forces. The platform can trap objects at the stagnation point of a planar elongational electrokinetic field for long time scales, as demonstrated by the trapping of ~100 nanometer polystyrene beads and DNA molecules for minutes, with a standard deviation in displacement from the trap center < 1 micrometer. This capability enables the stretching of deformable nanoscale objects in a high-throughput fashion, as illustrated by the stretching of more than 400 DNA molecules within ~4 hours. The flexibility of the electrokinetic stretcher opens up numerous possibilities for contact-free manipulation, with size-based sorting of DNA molecules performed as an example. The platform described provides an automated, high-throughput method to track and manipulate objects for real-time studies of micro- and nanoscale systems. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Comments: 9 pages, 7 figures

Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors

Authors: Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman, Wei Fu, Sarthak Das, Fabio Bussolotti, Rainer Lee, Siew Lang Teo, Ding Huang, Ivan Verzhbitskiy, Zhuojun Jiang, Zhuoling Jiang, Jian Wei Chai, Shi Wun Tong, Zi-En Ooi, Calvin Pei Yu Wong, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau

Abstract: Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here,… ▽ More Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga2O3 dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics. △ Less

Submitted 25 October, 2022; originally announced October 2022.

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Authors: Chit Siong Lau, Jing Yee Chee, Yee Sin Ang, Shi Wun Tong, Liemao Cao, Zi-En Ooi, Tong Wang, Lay Kee Ang, Yan Wang, Manish Chhowalla, Kuan Eng Johnson Goh

Abstract: Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer lengt… ▽ More Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapour deposition grown single-layer and bilayer WS$_2$ devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (\sim10 k$Ω$\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities ($\sim$190 cm$^2$V$^{-1}$s$^{-1}$) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS$_2$-indium interface. Our results reveal significant advances towards high-performance WS$_2$ devices using indium alloy contacts. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 5 Figures

Journal ref: ACS Nano 2020, 14, 10, 13700-13708

Toward Valley-coupled Spin Qubits

Authors: Kuan Eng Johnson Goh, Fabio Bussolotti, Chit Siong Lau, Dharmraj Kotekar-Patil, Zi En Ooi, Jingyee Chee

Abstract: The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectri… ▽ More The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectric, electrodes or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley-coupled spins in monolayer transition metal dichalcogenides. Such valley-coupled spins are protected by inversion asymmetry and time-reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up-to-date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin-valley qubits. △ Less

Submitted 22 April, 2020; v1 submitted 13 April, 2020; originally announced April 2020.

Comments: 40 pages, 12 figures