Showing 1–34 of 34 results for author: Novikov, S V

Chiral photonic super-crystals based on helical van der Waals homostructures

Authors: Kirill V. Voronin, Adilet N. Toksumakov, Georgy A. Ermolaev, Aleksandr S. Slavich, Mikhail K. Tatmyshevskiy, Sergey V. Novikov, Andrey A. Vyshnevy, Aleksey V. Arsenin, Kostya S. Novoselov, Davit A. Ghazaryan, Valentyn S. Volkov, Denis G. Baranov

Abstract: Chirality is probably the most mysterious among all symmetry transformations. Very readily broken in biological systems, it is practically absent in naturally occurring inorganic materials and is very challenging to create artificially. Chiral optical wavefronts are often used for the identification, control and discrimination of left- and right-handed biological and other molecules. Thus, it is c… ▽ More Chirality is probably the most mysterious among all symmetry transformations. Very readily broken in biological systems, it is practically absent in naturally occurring inorganic materials and is very challenging to create artificially. Chiral optical wavefronts are often used for the identification, control and discrimination of left- and right-handed biological and other molecules. Thus, it is crucially important to create materials capable of chiral interaction with light, which would allow one to assign arbitrary chiral properties to a light field. In this paper, we utilized van der Waals technology to assemble helical homostructures with chiral properties (e. g. circular dichroism). Because of the large range of van der Waals materials available such helical homostructures can be assigned with very flexible optical properties. We demonstrate our approach by creating helical homostructures based on multilayer As$_2$S$_3$, which offers the most pronounced chiral properties even in thin structures due to its strong biaxial optically anisotropy. Our work showcases that the chirality of an electromagnetic system may emerge at an intermediate level between the molecular and the mesoscopic one due to the tailored arrangement of non-chiral layers of van der Waals crystals and without additional patterning. △ Less

Submitted 28 September, 2023; originally announced September 2023.

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Authors: K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, S. F. Chichibu

Abstract: Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence (PL) spectra. However, direct CL measurements of atomically thin two-dimensional materials, su… ▽ More Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence (PL) spectra. However, direct CL measurements of atomically thin two-dimensional materials, such as transition metal dichalcogenides and hexagonal boron nitride (hBN), have been difficult due to the small excitation volume that interacts with high-energy electron beams (e-beams). Herein, distinct CL signals from a monolayer hBN, namely mBN, epitaxial film grown on a highly oriented pyrolytic graphite substrate are shown by using a home-made CL system capable of large-area and surface-sensitive excitation by an e-beam. The spatially resolved CL spectra at 13 K exhibited a predominant 5.5-eV emission band, which has been ascribed to originate from multilayered aggregates of hBN, markedly at thicker areas formed on the step edges of the substrate. Conversely, a faint peak at 6.04 eV was routinely observed from atomically flat areas. Since the energy agreed with the PL peak of 6.05 eV at 10 K that has been assigned as being due to the recombination of phonon-assisted direct excitons of mBN by Elias et al. [Nat. Commun. 10, 2639 (2019)], the CL peak at 6.04 eV is attributed to originate from the mBN epilayer. The CL results support the transition from indirect bandgap in bulk hBN to direct bandgap in mBN, in analogy with molybdenum disulfide. The results also encourage to elucidate emission properties of other low-dimensional materials with reduced excitation volumes by using the present CL configuration. △ Less

Submitted 17 May, 2023; originally announced May 2023.

Comments: 7 pages, 3 figures

Charge transport in the spatially correlated exponential random energy landscape: effect of the non-positive correlation function

Authors: S. V. Novikov

Abstract: Charge transport in amorphous semiconductors having spatially correlated exponential density of states (DOS) has been considered for the arbitrary behavior of the correlation function of random energies. Average carrier velocity is exactly calculated for the quasi-equilibrium (nondispersive) transport regime. For the symmetric exponential DOS with exponential tails for low and high energies and no… ▽ More Charge transport in amorphous semiconductors having spatially correlated exponential density of states (DOS) has been considered for the arbitrary behavior of the correlation function of random energies. Average carrier velocity is exactly calculated for the quasi-equilibrium (nondispersive) transport regime. For the symmetric exponential DOS with exponential tails for low and high energies and non-positive correlation function the temperature for the transition to the dispersive transport regime depends on correlation properties and becomes greater than the traditional estimation based on the DOS decay energy $kT=U_0$. Another new feature of the transport in the landscape having non-positive correlation function is the decay of the mobility with field in low field region. △ Less

Submitted 29 September, 2022; originally announced September 2022.

Comments: 21 pages, 8 figures

Density of states in locally ordered amorphous organic semiconductors: emergence of the exponential tails

Authors: S. V. Novikov

Abstract: We present a simple model of the local order in amorphous organic semiconductors which naturally produces a spatially correlated exponential density of states (DOS). The dominant contribution to the random energy landscape is provided by electrostatic contributions from dipoles or quadrupoles. An assumption of the preferable parallel orientation of neighbor quadrupoles or antiparallel orientation… ▽ More We present a simple model of the local order in amorphous organic semiconductors which naturally produces a spatially correlated exponential density of states (DOS). The dominant contribution to the random energy landscape is provided by electrostatic contributions from dipoles or quadrupoles. An assumption of the preferable parallel orientation of neighbor quadrupoles or antiparallel orientation of dipoles directly leads to the formation of the exponential tails of the DOS even for a moderate size of the ordered domains. The insensitivity of the exponential tail formation to the details of the microstructure of the material suggests that this mechanism is rather common in amorphous organic semiconductors. △ Less

Submitted 29 September, 2022; originally announced September 2022.

Comments: 18 pages, 10 figures

Journal ref: J. Chem. Phys. 154, 124711 (2021)

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Authors: Ricardo Javier Peña Román, Fábio J R Costa Costa, Alberto Zobelli, Christine Elias, Pierre Valvin, Guillaume Cassabois, Bernard Gil, Alex Summerfield, Tin S Cheng, Christopher J Mellor, Peter H Beton, Sergei V Novikov, Luiz F Zagonel

Abstract: Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of th… ▽ More Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer. Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regions is $(6.8\pm0.2)$ eV. Using optical spectroscopy to obtain the h-BN optical band gap, the exciton binding energy is determined as being of $(0.7\pm0.2)$ eV. In addition, the locally excited cathodoluminescence and photoluminescence show complex spectra that are typically associated to intragap states related to carbon defects. Moreover, in some regions of the monolayer h-BN we identify, using STM, point defects which have intragap electronic levels around 2.0 eV below the Fermi level. △ Less

Submitted 16 July, 2021; originally announced July 2021.

Comments: 50 Pages, 8 Figures, 100+ references

Journal ref: 2D Material 8 044001 (2021)

Low-temperature thermal conductivity of Co$_{1-x}$M$_x$Si (M=Fe, Ni) alloys

Authors: Yu. V. Ivanov, A. A. Levin, S. V. Novikov, D. A. Pshenay-Severin, M. P. Volkov, A. Yu. Zyuzin, A. T. Burkov, T. Nakama, L. U. Schnatmann, H. Reith, K. Nielsch

Abstract: We study the low-temperature electrical and thermal conductivity of CoSi and Co$_{1-x}$M$_x$Si alloys (M = Fe, Ni; $x \leq$ 0.06). Measurements show that the low-temperature electrical conductivity of Co$_{1-x}$Fe$_{x}$Si alloys decreases at $x > $ 0.01 by an order of magnitude compared with that of pure CoSi. It was expected that both the lattice and electronic contributions to thermal conductivi… ▽ More We study the low-temperature electrical and thermal conductivity of CoSi and Co$_{1-x}$M$_x$Si alloys (M = Fe, Ni; $x \leq$ 0.06). Measurements show that the low-temperature electrical conductivity of Co$_{1-x}$Fe$_{x}$Si alloys decreases at $x > $ 0.01 by an order of magnitude compared with that of pure CoSi. It was expected that both the lattice and electronic contributions to thermal conductivity would decrease in the alloys. However, our experimental results revealed that at temperatures below 20K the thermal conductivity of Fe- and Ni-containing alloys is several times larger than that of pure CoSi. We discuss possible mechanisms of the thermal conductivity enhancement. The most probable one is related to the dominant scattering of phonons by charge carriers. We propose a simple theoretical model that takes into account the complex semimetallic electronic structure of CoSi with nonequivalent valleys, and show that it explains well the increase of the lattice thermal conductivity with increasing disorder and the linear temperature dependence of the thermal conductivity in the Co$_{1-x}$Fe$_x$Si alloys below 20K. △ Less

Submitted 19 October, 2020; v1 submitted 1 October, 2020; originally announced October 2020.

Comments: 10 pages, 6 figures

Report number: 2010.00552

Journal ref: Materials Today Energy 20 (2021) 100666

Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride

Authors: Noah Mendelson, Dipankar Chugh, Jeffrey R. Reimers, Tin S. Cheng, Andreas Gottscholl, Hu Long, Christopher J. Mellor, Alex Zettl, Vladimir Dyakonov, Peter H. Beton, Sergei V. Novikov, Chennupati Jagadish, Hark Hoe Tan, Michael J. Ford, Milos Toth, Carlo Bradac, Igor Aharonovich

Abstract: Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by… ▽ More Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices. △ Less

Submitted 20 April, 2020; v1 submitted 2 March, 2020; originally announced March 2020.

Hopping charge transport in amorphous organic and inorganic materials with spatially correlated random energy landscape

Authors: S. V. Novikov

Abstract: General properties of the hopping transport of charge carriers in amorphous organic and inorganic materials are discussed. We consider the case where the random energy landscape in the materials is strongly spatially correlated. This is a very typical situation in the organic materials having the Gaussian density of states (DOS) and may be realized in some materials with the exponential DOS. We de… ▽ More General properties of the hopping transport of charge carriers in amorphous organic and inorganic materials are discussed. We consider the case where the random energy landscape in the materials is strongly spatially correlated. This is a very typical situation in the organic materials having the Gaussian density of states (DOS) and may be realized in some materials with the exponential DOS. We demonstrate that the different type of DOS leads to a very different functional form of the mobility field dependence even in the case of the identical correlation function of random energy. We provide important arguments in favor of the significant contribution of the local orientational order to the total magnitude of the energetic disorder in organic materials. A simple but promising model of charge transport in highly anisotropic composites materials is suggested. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 19 pages, 6 figures

Journal ref: Russ. J. Electrochem. 53, 275 (2017)

Two-dimensional bimolecular recombination in amorphous organic semiconductors

Authors: S. V. Novikov

Abstract: We consider the two-dimensional bimolecular recombination of charge carriers in amorphous organic semiconductors having the lamellar structure. We calculate the dependence of the effective recombination rate constant on the carrier density taking into account the correlated nature of the energetic disorder typical for organic semiconductors. Resulting recombination kinetics demonstrates a very ric… ▽ More We consider the two-dimensional bimolecular recombination of charge carriers in amorphous organic semiconductors having the lamellar structure. We calculate the dependence of the effective recombination rate constant on the carrier density taking into account the correlated nature of the energetic disorder typical for organic semiconductors. Resulting recombination kinetics demonstrates a very rich variety of behaviors depending on the correlation properties of the particular semiconductor and relevant charge density range. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 17 pages, 5 figures

Journal ref: Phys. Chem. Chem. Phys. 22, 1174 (2020)

Enhanced Bimolecular Recombination of Charge Carriers in Amorphous Organic Semiconductors: Overcoming the Langevin Limit

Authors: S. V. Novikov

Abstract: We consider the bimolecular charge carrier recombination in amorphous organic semiconductors having a special kind of energetic disorder where energy levels for electrons and holes at a given transport site move in the same direction with the variation of some disorder governing parameter (the parallel disorder). This particular kind of disorder could be found in materials where the dominant part… ▽ More We consider the bimolecular charge carrier recombination in amorphous organic semiconductors having a special kind of energetic disorder where energy levels for electrons and holes at a given transport site move in the same direction with the variation of some disorder governing parameter (the parallel disorder). This particular kind of disorder could be found in materials where the dominant part of the energetic disorder is provided by the conformational disorder. Contrary to the recently studied case of electrostatic disorder, the conformational disorder, if spatially correlated, leads to the increase of the recombination rate constant which becomes greater than the corresponding Langevin rate constant. Probably, organic semiconductors with the dominating conformational disorder represent the first class of amorphous organic semiconductors where the recombination rate constant could overcome the Langevin limit. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 28 pages, 4 figures

Journal ref: J. Phys. Chem. C 123, 18854 (2019)

Bimolecular Recombination of Charge Carriers in Polar Amorphous Organic Semiconductors: Effect of Spatial Correlation of the Random Energy Landscape

Authors: S. V. Novikov

Abstract: We present a simple model of the bimolecular charge carrier recombination in polar amorphous organic semiconductors where the dominant part of the energetic disorder is provided by permanent dipoles and show that the recombination rate constant could be much smaller than the corresponding Langevin rate constant. The reason for the strong decrease of the rate constant is the long range spatial corr… ▽ More We present a simple model of the bimolecular charge carrier recombination in polar amorphous organic semiconductors where the dominant part of the energetic disorder is provided by permanent dipoles and show that the recombination rate constant could be much smaller than the corresponding Langevin rate constant. The reason for the strong decrease of the rate constant is the long range spatial correlation of the random energy landscape in amorphous dipolar materials, without spatial correlation even strong disorder does not modify the Langevin rate constant. Our study shows that the significant suppression of the bimolecular recombination could take place in homogeneous amorphous organic semiconductors and does not need large scale inhomogeneity of the material. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 28 pages 5 figures

Journal ref: J. Phys. Chem. C 122, 22856 (2018)

Diffusion of a particle in the Gaussian random energy landscape: Einstein relation and analytical properties of average velocity and diffusivity as functions of driving force

Authors: S. V. Novikov

Abstract: We demonstrate that the Einstein relation for the diffusion of a particle in the random energy landscape with the Gaussian density of states is an exclusive 1D property and does not hold in higher dimensions. We also consider the analytical properties of the particle velocity and diffusivity for the limit of weak driving force and establish connection between these properties and dimensionality an… ▽ More We demonstrate that the Einstein relation for the diffusion of a particle in the random energy landscape with the Gaussian density of states is an exclusive 1D property and does not hold in higher dimensions. We also consider the analytical properties of the particle velocity and diffusivity for the limit of weak driving force and establish connection between these properties and dimensionality and spatial correlation of the random energy landscape. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 19 pages, 5 figures

Journal ref: Phys. Rev. E, 98, 012128 (2018)

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Authors: Debora Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Bernard Gil, Alex Summerfield, Peter H. Beton, Sergei V. Novikov, Guillaume Cassabois, Julien E. Rault, Abdelkarim Ouerghi

Abstract: We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflec… ▽ More We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN. △ Less

Submitted 19 June, 2018; originally announced June 2018.

Comments: 9 pages, 4 figures SI 5 pages 2 figures

Journal ref: Applied Physics Letters 112, 253102 (2018)

Diffusion of a particle in the spatially correlated exponential random energy landscape: transition from normal to anomalous diffusion

Authors: S. V. Novikov

Abstract: Diffusive transport of a particle in spatially correlated random energy landscape having exponential density of states has been considered. We exactly calculate the diffusivity in the nondispersive quasi-equilibrium transport regime and found that for slow decaying correlation functions the diffusivity becomes singular at some particular temperature higher than the temperature of the transition to… ▽ More Diffusive transport of a particle in spatially correlated random energy landscape having exponential density of states has been considered. We exactly calculate the diffusivity in the nondispersive quasi-equilibrium transport regime and found that for slow decaying correlation functions the diffusivity becomes singular at some particular temperature higher than the temperature of the transition to the true non-equilibrium dispersive transport regime. It means that the diffusion becomes anomalous and does not follow the usual $\propto t^{1/2}$ law. In such situation the fully developed non-equilibrium regime emerges in two stages: first, at some temperature there is the transition from the normal to anomalous diffusion, and then at lower temperature the average velocity for the infinite medium goes to zero, thus indicating the development of the true dispersive regime. Validity of the Einstein relation is discussed for the situation where the diffusivity does exist. △ Less

Submitted 9 October, 2017; originally announced October 2017.

Comments: 24 pages, 8 figures

Hopping charge transport in amorphous semiconductors with the spatially correlated exponential density of states

Authors: S. V. Novikov

Abstract: Hopping charge transport in amorphous semiconductors having spatially correlated exponential density of states has been considered. Average carrier velocity is exactly calculated for the quasi-equilibrium (nondispersive) transport regime. We suggest also a heuristic approach for the consideration of the carrier velocity for the non-equilibrium dispersive regime. Hopping charge transport in amorphous semiconductors having spatially correlated exponential density of states has been considered. Average carrier velocity is exactly calculated for the quasi-equilibrium (nondispersive) transport regime. We suggest also a heuristic approach for the consideration of the carrier velocity for the non-equilibrium dispersive regime. △ Less

Submitted 16 September, 2017; originally announced September 2017.

Comments: 21 pages, 3 figures

Journal ref: J. Chem. Phys. 146, 024504 (2017)

Energy filtering enhancement of thermoelectric performance of nanocrystalline Cr-Si composites

Authors: A. T. Burkov, S. V. Novikov, V. V. Khovaylo, J. Schumann

Abstract: We report on thermoelectric properties of nanocrystalline Cr$_{\rm 1-x}$Si$_{\rm x}$ composite films. As-deposited amorphous films were transformed into a nanocrystalline state with average grain size of 10--20~nm by annealing during in-situ thermopower and electrical resistivity measurements. The partially crystallized films, i.e. the films consisting of crystalline grains dispersed in the amorph… ▽ More We report on thermoelectric properties of nanocrystalline Cr$_{\rm 1-x}$Si$_{\rm x}$ composite films. As-deposited amorphous films were transformed into a nanocrystalline state with average grain size of 10--20~nm by annealing during in-situ thermopower and electrical resistivity measurements. The partially crystallized films, i.e. the films consisting of crystalline grains dispersed in the amorphous matrix, are a new type of the heterogeneous material where the nanocrystalline phase plays the role of scattering centers giving rise to a large contribution to the thermopower. We show that the thermopower enhancement is related to the energy dependent scattering (energy filtering) of the charge carriers on the nanograin interfaces. △ Less

Submitted 13 April, 2016; v1 submitted 2 March, 2016; originally announced March 2016.

Comments: 5 pages, 6 figures

Journal ref: Journal of Alloys and Compounds 691 (2017) 89-94

Charge Carrier Transport in Disordered Polymers

Authors: S. V. Novikov

Abstract: General properties of charge carrier transport in disordered organic materials are discussed. Spatial correlation between energies of transport sites determines the form of the drift mobility field dependence. Particular kind of spatial correlation in a disordered material depends on its nature. Mobility field dependences have to be different in polar and nonpolar materials. Different methods of m… ▽ More General properties of charge carrier transport in disordered organic materials are discussed. Spatial correlation between energies of transport sites determines the form of the drift mobility field dependence. Particular kind of spatial correlation in a disordered material depends on its nature. Mobility field dependences have to be different in polar and nonpolar materials. Different methods of mobility calculation from the shape of photocurrent transient are analyzed. A widely used method is very sensitive to the variation of the shape of the transient and sometimes produces results that effectively masquerade the true dependence of the mobility on electric field or trap concentration. Arguments in favor of the better, more reliable method are suggested. Charge transport in materials containing charged traps is considered without using the isolated trap approximation and this leads to qualitatively different results. They indicate that the effect of charged traps can hardly be responsible for experimentally observed transport properties of disordered organic materials. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Comments: 17 pages, 7 figures

Journal ref: J. Polymer Sci. B 41, 2584 (2003)

Organic glasses: cluster structure of the random energy landscape and its effect on charge transport and injection

Authors: S. V. Novikov

Abstract: An appropriate model for the random energy landscape in organic glasses is a spatially correlated Gaussian field, generated by randomly located and oriented dipoles and quadrupoles. Correlation properties of energetic disorder directly dictates the mobility dependence on the applied electric field. Electrostatic disorder is significantly modified in the vicinity of the electrode that affects injec… ▽ More An appropriate model for the random energy landscape in organic glasses is a spatially correlated Gaussian field, generated by randomly located and oriented dipoles and quadrupoles. Correlation properties of energetic disorder directly dictates the mobility dependence on the applied electric field. Electrostatic disorder is significantly modified in the vicinity of the electrode that affects injection properties. Correlated Gaussian field forms clusters. We suggest a simple method to estimate an asymptotics of the cluster distribution on size for deep clusters where a value of the field on each site is much greater than the rms disorder. Hopping transport in organic glasses in the case of high carrier density could be described in terms of the effective density-dependent temperature. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Comments: 4 pages, 2 figures; Proceedings if 10th International Workshop on Non-Crystalline Solids (IWNCS 10)

Journal ref: physica status solidi (c) 8, 3047 (2011)

Quadrupolar glass as a model for charge carrier transport in nonpolar organic materials

Authors: S. V. Novikov

Abstract: Monte Carlo simulation of the charge carrier transport in disordered nonpolar organic materials has been carried out. As a suitable model we considered the model of quadrupolar glass. A general formula for the temperature and field dependence of the mobility was suggested. A comparison with experimental data has been carried out. Monte Carlo simulation of the charge carrier transport in disordered nonpolar organic materials has been carried out. As a suitable model we considered the model of quadrupolar glass. A general formula for the temperature and field dependence of the mobility was suggested. A comparison with experimental data has been carried out. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Comments: 4 pages, 2 figures

Journal ref: Annalen der Physik 18, 954 (2009)

Organic glasses: cluster structure of the random energy landscape

Authors: S. V. Novikov

Abstract: An appropriate model for the random energy landscape in organic glasses is a spatially correlated Gaussian field. We calculated the distribution of the average value of a Gaussian random field in a finite domain. The results of the calculation demonstrate a strong dependence of the width of the distribution on the spatial correlations of the field. Comparison with the simulation results for the di… ▽ More An appropriate model for the random energy landscape in organic glasses is a spatially correlated Gaussian field. We calculated the distribution of the average value of a Gaussian random field in a finite domain. The results of the calculation demonstrate a strong dependence of the width of the distribution on the spatial correlations of the field. Comparison with the simulation results for the distribution of the size of the cluster indicates that the distribution of an average field could serve as a useful tool for the estimation of the asymptotic behavior of the distribution of the size of the clusters for "deep" clusters where value of the field on each site is much greater than the rms disorder. We also demonstrate significant modification of the properties of energetic disorder in organic glasses at the vicinity of the electrode. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Comments: 4 pages, 2 figures

Journal ref: Annalen der Physik 18, 949 (2009)

Estimation of the concentration of deep traps in organic photoconductors using two-photon absorption

Authors: S. V. Novikov, A. R. Tameev, A. V. Vannikov, J. -M. Nunzi

Abstract: Typically, amorphous organic materials contain high density of traps. Traps hinder charge transport and, hence, affect various working parameters of organic electronic devices. In this paper we suggest a simple but reliable method for the estimation of the concentration of deep traps (traps that keep carriers for a time much longer than the typical transport time of the device). The method is base… ▽ More Typically, amorphous organic materials contain high density of traps. Traps hinder charge transport and, hence, affect various working parameters of organic electronic devices. In this paper we suggest a simple but reliable method for the estimation of the concentration of deep traps (traps that keep carriers for a time much longer than the typical transport time of the device). The method is based on the measurement of the dependence of the total charge, collected at the electrode, on the total initial charge, uniformly generated in the transport layer under the action of a light pulse. Advantages and limitations of the method are discussed and an experimental example of the estimation of the density of deep traps in photoconductive organic material poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene (MEH-PPV) is provided. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Comments: 9 pages, 5 figures; Proceedings of ICONO 2010: International Conference on Coherent and Nonlinear Optics

Journal ref: Proc. SPIE 7993, 799321 (2011)

Time of Flight Transients in the Dipolar Glass Model

Authors: S. V. Novikov, A. P. Tyutnev, L. B. Schein

Abstract: Using Monte Carlo simulation we investigated time of flight current transients predicted by the dipolar glass model for a random spatial distribution of hopping centers. Behavior of the carrier drift mobility was studied at room temperature over a broad range of electric field and sample thickness. A flat plateau followed by $j\propto t^{-2}$ current decay is the most common feature of the simulat… ▽ More Using Monte Carlo simulation we investigated time of flight current transients predicted by the dipolar glass model for a random spatial distribution of hopping centers. Behavior of the carrier drift mobility was studied at room temperature over a broad range of electric field and sample thickness. A flat plateau followed by $j\propto t^{-2}$ current decay is the most common feature of the simulated transients. Poole-Frenkel mobility field dependence was confirmed over 5 to 200 V/$μ$m as well as its independence of the sample thickness. Universality of transients with respect to both field and sample thickness has been observed. A simple phenomenological model to describe simulated current transients has been proposed. Simulation results agree well with the reported Poole-Frenkel slope and shape of the transients for a prototype molecularly doped polymer. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Comments: 15 pages, 10 figures, and 2 tables

Journal ref: Chem. Phys. 403, 68 (2012)

Hopping charge transport in organic materials

Authors: S. V. Novikov

Abstract: General properties of the transport of charge carriers (electrons and holes) in disordered organic materials are discussed. It was demonstrated that the dominant part of the total energetic disorder in organic material is usually provided by the electrostatic disorder, generated by randomly located and oriented dipoles and quadrupoles. For this reason this disorder is strongly spatially correlated… ▽ More General properties of the transport of charge carriers (electrons and holes) in disordered organic materials are discussed. It was demonstrated that the dominant part of the total energetic disorder in organic material is usually provided by the electrostatic disorder, generated by randomly located and oriented dipoles and quadrupoles. For this reason this disorder is strongly spatially correlated. Spatial correlation directly governs the field dependence of the carrier drift mobility. Shape of the current transients, which is of primary importance for a correct determination of the carrier mobility, is considered. A notable feature of the electrostatic disorder is its modification in the vicinity of the electrode, and this modification takes place without modification of the structure of the material. It is shown how this phenomenon affects characteristics of the charge injection. We consider also effect of inter-charge interaction on charge transport. △ Less

Submitted 19 March, 2013; originally announced March 2013.

Comments: 12 pages, 9 figures

Journal ref: Russian Journal of Electrochemistry 48, 388 (2012)

Charge carrier transport in molecularly doped polycarbonate as a test case for the dipolar glass model

Authors: S. V. Novikov, A. P. Tyutnev

Abstract: We present the results of Monte-Carlo simulations of the charge carrier transport in a disordered molecular system containing spatial and energetic disorders using the dipolar glass model. Model parameters of the material were chosen to fit a typical polar organic photoconductor polycarbonate doped with 30% of aromatic hydrazone, whose transport properties are well documented in literature. Simula… ▽ More We present the results of Monte-Carlo simulations of the charge carrier transport in a disordered molecular system containing spatial and energetic disorders using the dipolar glass model. Model parameters of the material were chosen to fit a typical polar organic photoconductor polycarbonate doped with 30% of aromatic hydrazone, whose transport properties are well documented in literature. Simulated carrier mobility demonstrates a usual Poole-Frenkel field dependence and its slope is very close to the experimental value without using any adjustable parameter. At room temperature transients are universal with respect to the electric field and transport layer thickness. At the same time, carrier mobility does not depend on the layer thickness and transients develop a well-defined plateau where the current does not depend on time, thus demonstrating a non-dispersive transport regime. Tails of the transients decay as power law with the exponent close to -2. This particular feature indicates that transients are close to the boundary between dispersive and non-dispersive transport regimes. Shapes of the simulated transients are in very good agreement with the experimental ones. In summary, we provide a first verification of a self-consistency of the dipolar glass transport model, where major transport parameters, extracted from the experimental transport data, are then used in the transport simulation, and the resulting mobility field dependence and transients are in very good agreement with the initial experimental data. △ Less

Submitted 19 March, 2013; originally announced March 2013.

Comments: 10 pages, 8 figures

Journal ref: J. Chem. Phys. 138, 104120 (2013)

Distribution of averages in a correlated Gaussian medium as a tool for the estimation of the cluster distribution on size

Authors: S. V. Novikov, M. Van der Auweraer

Abstract: Calculation of the distribution of the average value of a Gaussian random field in a finite domain is carried out for different cases. The results of the calculation demonstrate a strong dependence of the width of the distribution on the spatial correlations of the field. Comparison with the simulation results for the distribution of the size of the cluster indicates that the distribution of an… ▽ More Calculation of the distribution of the average value of a Gaussian random field in a finite domain is carried out for different cases. The results of the calculation demonstrate a strong dependence of the width of the distribution on the spatial correlations of the field. Comparison with the simulation results for the distribution of the size of the cluster indicates that the distribution of an average field could serve as a useful tool for the estimation of the asymptotic behavior of the distribution of the size of the clusters for "deep" clusters where value of the field on each site is much greater than the rms disorder. △ Less

Submitted 26 December, 2008; originally announced December 2008.

Comments: 15 pages, 6 figures, RevTeX

Hopping charge transport in disordered organic materials: where is the disorder?

Authors: S. V. Novikov, A. V. Vannikov

Abstract: Effect of energetic disorder on charge carrier transport in organic materials has been reexamined. A reliable method for mobility calculation and subsequent evaluation of relevant disorder parameters has been discussed. This method is well suited for a direct calculation of the magnitude of dipolar disorder $σ_\textrm{dip}$ in polar organic materials from the current transients. Calculation of… ▽ More Effect of energetic disorder on charge carrier transport in organic materials has been reexamined. A reliable method for mobility calculation and subsequent evaluation of relevant disorder parameters has been discussed. This method is well suited for a direct calculation of the magnitude of dipolar disorder $σ_\textrm{dip}$ in polar organic materials from the current transients. Calculation of $σ_\textrm{dip}$ for several transport materials with varying concentration of polar dopants gives concentration dependences that are in reasonable agreement with theoretical predictions. A possible solution of the puzzle concerning the disorder effect on the mobility temperature dependence has been suggested. △ Less

Submitted 27 September, 2008; originally announced September 2008.

Comments: 21 pages, 6 figures

Calculation of the dynamical critical exponent in the model A of critical dynamics to order ε^4

Authors: L. Ts. Adzhemyan, S. V. Novikov, L. Sladkoff

Abstract: A new method based on the R'-operation of the renormalization theory is proposed for the numerical calculation of the renormalization constants in the theory of critical behaviour. The problem of finding residues of the poles of the Green's functions at ε= 0, where ε= 4 - d, is reduced to the evaluation of multiple UV-finite integrals, which can be performed by means of standard integration prog… ▽ More A new method based on the R'-operation of the renormalization theory is proposed for the numerical calculation of the renormalization constants in the theory of critical behaviour. The problem of finding residues of the poles of the Green's functions at ε= 0, where ε= 4 - d, is reduced to the evaluation of multiple UV-finite integrals, which can be performed by means of standard integration programs. The method is used to calculate the renormalization group functions of the model A of critical dynamics in four-loop approximation. Dynamical exponent z of the model A is calculated in the fourth order of the ε-expansion. △ Less

Submitted 9 August, 2008; originally announced August 2008.

Comments: 5 pages

Hopping transport of interacting carriers in disordered organic materials

Authors: Sergey V. Novikov

Abstract: Computer simulation of the hopping charge transport in disordered organic materials has been carried out explicitly taking into account charge-charge interactions. This approach provides a possibility to take into account dynamic correlations that are neglected by more traditional approaches like mean field theory. It was found that the effect of interaction is no less significant than the usual… ▽ More Computer simulation of the hopping charge transport in disordered organic materials has been carried out explicitly taking into account charge-charge interactions. This approach provides a possibility to take into account dynamic correlations that are neglected by more traditional approaches like mean field theory. It was found that the effect of interaction is no less significant than the usually considered effect of filling of deep states by non-interacting carriers. It was found too that carrier mobility generally increases with the increase of carrier density, but the effect of interaction is opposite for two models of disordered organic materials: for the non-correlated random distribution of energies with Gaussian DOS mobility decreases with the increase of the interaction strength, while for the model with long range correlated disorder mobility increases with the increase of interaction strength. △ Less

Submitted 31 August, 2007; originally announced August 2007.

Comments: 6 pages, 5 figures, extended version from the conference TIDS12

Anomalous scaling in two and three dimensions for a passive vector field advected by a turbulent flow

Authors: S. V. Novikov

Abstract: A model of the passive vector field advected by the uncorrelated in time Gaussian velocity with power-like covariance is studied by means of the renormalization group and the operator product expansion. The structure functions of the admixture demonstrate essential power-like dependence on the external scale in the inertial range (the case of an anomalous scaling). The method of finding of indep… ▽ More A model of the passive vector field advected by the uncorrelated in time Gaussian velocity with power-like covariance is studied by means of the renormalization group and the operator product expansion. The structure functions of the admixture demonstrate essential power-like dependence on the external scale in the inertial range (the case of an anomalous scaling). The method of finding of independent tensor invariants in the cases of two and three dimensions is proposed to eliminate linear dependencies between the operators entering into the operator product expansions of the structure functions. The constructed operator bases, which include the powers of the dissipation operator and the enstrophy operator, provide the possibility to calculate the exponents of the anomalous scaling. △ Less

Submitted 21 March, 2006; originally announced March 2006.

Comments: 9 pages, LaTeX2e(iopart.sty), submitted to J. Phys. A: Math. Gen

Journal ref: J. Phys. A: Math. Gen. 39 (2006) 8133 - 8140

Roughness-induced energetic disorder at the metal/organic interface

Authors: S. V. Novikov, G. G. Malliaras

Abstract: The amplitude of the roughness-induced energetic disorder at the metal/organic interface is calculated. It was found that for moderately rough electrodes, the correction to the electrostatic image potential at the charge location is small. For this reason, roughness-induced energetic disorder cannot noticeably affect charge carrier injection, contrary to the recent reports. The amplitude of the roughness-induced energetic disorder at the metal/organic interface is calculated. It was found that for moderately rough electrodes, the correction to the electrostatic image potential at the charge location is small. For this reason, roughness-induced energetic disorder cannot noticeably affect charge carrier injection, contrary to the recent reports. △ Less

Submitted 29 June, 2005; originally announced June 2005.

Comments: 9 pages and 2 figures

Energetic disorder at the metal/organic semiconductor interface

Authors: S. V. Novikov, G. G. Malliaras

Abstract: The physics of organic semiconductors is dominated by the effects of energetic disorder. We show that image forces reduce the electrostatic component of the total energetic disorder near an interface with a metal electrode. Typically, the variance of energetic disorder is dramatically reduced at the first few layers of organic semiconductor molecules adjacent to the metal electrode. Implications… ▽ More The physics of organic semiconductors is dominated by the effects of energetic disorder. We show that image forces reduce the electrostatic component of the total energetic disorder near an interface with a metal electrode. Typically, the variance of energetic disorder is dramatically reduced at the first few layers of organic semiconductor molecules adjacent to the metal electrode. Implications for charge injection into organic semiconductors are discussed. △ Less

Submitted 29 June, 2005; originally announced June 2005.

Comments: 9 pages, 2 figures

Search For Hole Mediated Ferromagnetism In Cubic (Ga,Mn)N

Authors: M. Sawicki, T. Dietl, C. T. Foxon, S. V. Novikov, R. P. Campion, K. W. Edmonds, K. Y. Wang, A. D. Giddings, B. L. Gallagher

Abstract: Results of magnetisation measurements on p-type zincblende-(Ga,Mn)N are reported. In addition to a small high temperature ferromagnetic signal, we detect ferromagnetic correlation among the remaining Mn ions, which we assign to the onset of hole-mediated ferromagnetism in (Ga,Mn)N. Results of magnetisation measurements on p-type zincblende-(Ga,Mn)N are reported. In addition to a small high temperature ferromagnetic signal, we detect ferromagnetic correlation among the remaining Mn ions, which we assign to the onset of hole-mediated ferromagnetism in (Ga,Mn)N. △ Less

Submitted 21 October, 2004; originally announced October 2004.

Comments: 2 pages, 1 figure, proc. ICPS 27, Flagstaff '04

Journal ref: Proc. 27th Int. Conf. on Phys. of Semicon., Flagstaff, Az, July 2004, eds. J. Menendez and Ch. Van de Walle, (New York 2005) p. 1371.

P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Authors: S. V. Novikov, K. W. Edmonds, A. D. Giddings, K. Y. Wang, C. R. Staddon, R. P. Campion, B. L. Gallagher, C. T. Foxon

Abstract: Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass Spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstra… ▽ More Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass Spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentrations of x<0.1. P-type conductivity for the cubic Ga1-xMnxN layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends non-linearly on the Mn incorporation and varies from 3x10^16 to 5x10^18 cm-3. △ Less

Submitted 21 November, 2003; originally announced November 2003.

Comments: 7 pages, 3 figures

Journal ref: Semiconductor Science and Technology 19, L13-16 (2004)

Anomalous scaling of a passive scalar in the presence of strong anisotropy

Authors: L. Ts. Adzhemyan, N. V. Antonov, M. Hnatič, S. V. Novikov

Abstract: Field theoretic renormalization group and the operator product expansion are applied to a model of a passive scalar field, advected by the Gaussian strongly anisotropic velocity field. Inertial-range anomalous scaling behavior is established, and explicit asymptotic expressions for the n-th order structure functions of scalar field are obtained; they are represented by superpositions of power la… ▽ More Field theoretic renormalization group and the operator product expansion are applied to a model of a passive scalar field, advected by the Gaussian strongly anisotropic velocity field. Inertial-range anomalous scaling behavior is established, and explicit asymptotic expressions for the n-th order structure functions of scalar field are obtained; they are represented by superpositions of power laws with nonuniversal (dependent on the anisotropy parameters) anomalous exponents. In the limit of vanishing anisotropy, the exponents are associated with tensor composite operators built of the scalar gradients, and exhibit a kind of hierarchy related to the degree of anisotropy: the less is the rank, the less is the dimension and, consequently, the more important is the contribution to the inertial-range behavior. The leading terms of the even (odd) structure functions are given by the scalar (vector) operators. For the finite anisotropy, the exponents cannot be associated with individual operators (which are essentially ``mixed'' in renormalization), but the aforementioned hierarchy survives for all the cases studied. The second-order structure function is studied in more detail using the renormalization group and zero-mode techniques. △ Less

Submitted 31 May, 2000; originally announced May 2000.

Comments: REVTEX file with EPS figures

Journal ref: Phys. Rev. E, 63 (2001) 016309