Showing 1–7 of 7 results for author: Nakanishi, S

Subpixel Response of SOI Pixel Sensor for X-ray Astronomy with Pinned Depleted Diode: First Result from Mesh Experiment

Authors: Kazuho Kayama, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Yuki Amano, Junko S. Hiraga, Masayuki Yoshida, Yasuaki Kamata, Shotaro Sakuma, Daito Yuhi, Yukino Urabe, Hiroshi Tsunemi, Hideaki Matsumura, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Yasuo Arai, Ikuo Kurachi, Ayaki Takeda, Koji Mori , et al. (9 additional authors not shown)

Abstract: We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully… ▽ More We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 $μ$ m CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 $μ$ s time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution. △ Less

Submitted 26 May, 2019; originally announced May 2019.

Comments: 10 pages, 7 figures, , Conference proceedings for PIXEL2018

Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area

Authors: Hideki Hayashi, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Hideaki Matsumura, Katsuhiro Tachibana, Sodai Harada, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi, Kenji Oono , et al. (1 additional authors not shown)

Abstract: We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processe… ▽ More We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processed ``XRPIX5b'' with the largest imaging area of 21.9~mm $\times$ 13.8~mm in the XRPIX series. X-ray spectra are successfully obtained from all the pixels, and the readout noise is 46~e$^-$~(rms) in the frame readout mode. The gain variation was measured to be 1.2\%~(FWHM) among the pixels. We successfully obtain the X-ray image in the event-driven readout mode. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Comments: 5 pages, 9 figures

Journal ref: Nuclear Inst. and Methods in Physics Research, A 924 (2019) 400-403

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Authors: Takaaki Tanaka, Takeshi Go Tsuru, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Kazuho Kayama, Yuki Amano, Hideaki Matsumura, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Kohei Fukuda, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi , et al. (2 additional authors not shown)

Abstract: We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithi… ▽ More We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity. △ Less

Submitted 14 December, 2018; originally announced December 2018.

Comments: 5 pages, 9 figures, submitted to Conference Record of IEEE NSS-MIC 2018

Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure

Authors: Sodai Harada, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Hideaki Matsumura, Katsuhiro Tachibana, Hideki Hayashi, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi, Kenji Oono , et al. (1 additional authors not shown)

Abstract: We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The… ▽ More We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The current version of XRPIX has lower spectral performance in the Event-Driven readout mode than in the Frame readout mode, which is due to the interference between the sensor layer and the circuit layer. The interference also lowers the gain. In order to suppress the interference, we developed a new device, "XRPIX6E" equipped with the Pinned Depleted Diode structure. A sufficiently highly-doped buried p-well is formed at the interface between the buried oxide layer and the sensor layer, and acts as a shield layer. XRPIX6E exhibits improved spectral performances both in the Event-Driven readout mode and in the Frame readout mode in comparison to previous devices. The energy resolutions in full width at half maximum at 6.4 keV are 236 $\pm$ 1 eV and 335 $\pm$ 4 eV in the Frame and Event-Driven readout modes, respectively. There are differences between the readout noise and the spectral performance in the two modes, which suggests that some mechanism still degrades the performance in the Event-Driven readout mode. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Comments: 13 pages, 5 figures, 1 table, accepted for publication in NIMA on September 27, 2018

Kyoto's Event-Driven X-ray Astronomy SOI pixel sensor for the FORCE mission

Authors: Takeshi G. Tsuru, Hideki Hayashi, Katsuhiro Tachibana, Sodai Harada, Hiroyuki Uchida, Takaaki Tanaka, Yasuo Arai, Ikuo Kurachi, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Takayoshi Kohmura, Kouichi Hagino, Kenji Ohno, Kohsuke Negishi, Keigo Yarita, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Shunta Nakanishi, Hiroki Kamehama , et al. (1 additional authors not shown)

Abstract: We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with… ▽ More We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger output function implemented in each pixel with the time resolution higher than $10~{\rm μsec}$ (Event-Driven readout mode). It allows us to do fast timing observation and also reduces non-X-ray background dominating at a high X-ray energy band above 5--10~keV by adopting an anti-coincidence technique. In this paper, we introduce our latest results from the developments of the XRPIXs. (1) We successfully developed a 3-side buttable back-side illumination device with an imaging area size of 21.9~mm$\times$13.8~mm and an pixel size of $36~{\rm μm} \times 36~{\rm μm}$. The X-ray throughput with the device reaches higher than 0.57~kHz in the Event-Driven readout mode. (2) We developed a device using the double SOI structure and found that the structure improves the spectral performance in the Event-Driven readout mode by suppressing the capacitive coupling interference between the sensor and circuit layers. (3) We also developed a new device equipped with the Pinned Depleted Diode structure and confirmed that the structure reduces the dark current generated at the interface region between the sensor and the SiO$_2$ insulator layers. The device shows an energy resolution of 216~eV in FWHM at 6.4~keV in the Event-Driven readout mode. △ Less

Submitted 29 July, 2018; originally announced July 2018.

Comments: 11 pages, 10 figures, Proceedings Volume 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII

Single-Molecule Surface-Enhanced Raman Scattering Spectrum of Non-Resonant Aromatic Amine Showing Raman Forbidden Bands

Authors: Yuko S. Yamamoto, Yuya Kayano, Yukihiro Ozaki, Zhenglong Zhang, Tomomi Kozu, Tamitake Itoh, Shunsuke Nakanishi

Abstract: We present the experimentally obtained single-molecule (SM) surface-enhanced Raman scattering (SERS) spectrum of 4-aminibenzenethiol (4-ABT), also known as para-aminothiophenol (PATP). Measured at a 4-ABT concentration of 8 * 10^-10 M, the spectra show Raman forbidden modes. The SM-SERS spectrum of 4-ABT obtained using a non-resonant visible laser is different from the previously reported SERS spe… ▽ More We present the experimentally obtained single-molecule (SM) surface-enhanced Raman scattering (SERS) spectrum of 4-aminibenzenethiol (4-ABT), also known as para-aminothiophenol (PATP). Measured at a 4-ABT concentration of 8 * 10^-10 M, the spectra show Raman forbidden modes. The SM-SERS spectrum of 4-ABT obtained using a non-resonant visible laser is different from the previously reported SERS spectra of 4-ABT, and could not be reconstructed using quantum mechanical calculations. Careful classical assignments (not based on quantum-mechanical calculations) are reported, and indicate that differences in the reported spectra of 4-ABT are mainly due to the appearance of Raman forbidden bands. The presence of Raman forbidden bands can be explained by the charge-transfer (CT) effect of 4-ABT adsorbed on the silver nanostructures, indicating a breakdown of Raman selection rules at the SERS hotspot. △ Less

Submitted 26 October, 2016; originally announced October 2016.

Measurement of B(D_s+ -> mu+ nu_mu)/B(D_s+ -> phi mu+ nu_mu) and Determination of the Decay Constant f_{D_s}

Authors: K. Kodama, S. Torikai, N. Ushida, A. Mokhtarani, V. S. Paolone, J. T. Volk, J. O. Wilcox, P. M. Yager, R. M. Edelstein, A. P. Freyberger, D. B. Gibaut, R. J. Lipton, W. R. Nichols, D. M. Potter, J. S. Russ, C. Zhang, Y. Zhang, H. I. Jang, J. Y. Kim, B. R. Baller, R. J. Stefanski, K. Nakazawa, S. H. Chung, M. S. Park, I. G. Park , et al. (49 additional authors not shown)

Abstract: We have observed $23.2 \pm 6.0_{-0.9}^{+1.0}$ purely-leptonic decays of $D_s^+ -> μ^+ ν_μ$ from a sample of muonic one prong decay events detected in the emulsion target of Fermilab experiment E653. Using the $D_s^+ -> φμ^+ ν_μ$ yield measured previously in this experiment, we obtain $B(D_s^+ --> μ^+ ν_μ) / B(D_s^+ --> φμ^+ ν_μ) =0.16 \pm 0.06 \pm 0.03$. In addition, we extract the decay constan… ▽ More We have observed $23.2 \pm 6.0_{-0.9}^{+1.0}$ purely-leptonic decays of $D_s^+ -> μ^+ ν_μ$ from a sample of muonic one prong decay events detected in the emulsion target of Fermilab experiment E653. Using the $D_s^+ -> φμ^+ ν_μ$ yield measured previously in this experiment, we obtain $B(D_s^+ --> μ^+ ν_μ) / B(D_s^+ --> φμ^+ ν_μ) =0.16 \pm 0.06 \pm 0.03$. In addition, we extract the decay constant $f_{D_s}=194 \pm 35 \pm 20 \pm 14 MeV$. △ Less

Submitted 28 June, 1996; originally announced June 1996.

Comments: 15 pages including one figure

Report number: DPNU-96-33

Journal ref: Phys.Lett.B382:299-304,1996