Showing 1–2 of 2 results for author: Nainani, A
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Enhanced Circuit Densities in Epitaxially Defined FinFETs (EDFinFETs) over FinFETs
Authors:
Sushant Mittal,
Aneesh Nainani,
M. C. Abraham,
Saurabh Lodha,
Udayan Ganguly
Abstract:
FinFET technology is prone to suffer from Line Edge Roughness (LER) based VT variation with scaling. To address this, we proposed an Epitaxially Defined (ED) FinFET (EDFinFET) as an alternate to FinFET architecture for 10 nm node and beyond. We showed by statistical simulations that EDFinFET reduces LER based VT variability by 90% and overall variability by 59%. However, EDFinFET consists of wider…
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FinFET technology is prone to suffer from Line Edge Roughness (LER) based VT variation with scaling. To address this, we proposed an Epitaxially Defined (ED) FinFET (EDFinFET) as an alternate to FinFET architecture for 10 nm node and beyond. We showed by statistical simulations that EDFinFET reduces LER based VT variability by 90% and overall variability by 59%. However, EDFinFET consists of wider fins as the fin widths are not constrained by electrostatics and variability (cf. FinFETs have fin width ~ LG/3 where LG is gate-length). This indicates that EDFinFET based circuits may be less dense. In this study we show that wide fins enable taller fin heights. The ability to engineer multiple STI levels on tall fins enables different transistor widths (i.e. various W/Ls e.g. 1-10) in a single fin. This capability ensures that even though individual EDFinFET devices have ~2x larger footprints than FinFETs, EDFinFET may produce equal or higher circuit density for basic building blocks like inverters or NAND gates for W/Ls of 2 and higher.
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Submitted 15 April, 2016;
originally announced April 2016.
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Enhancing hole mobility in III-V semiconductors
Authors:
Aneesh Nainani,
Brian. R. Bennett,
J. Brad Boos,
Mario G. Ancona,
Krishna C. Saraswat
Abstract:
Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as silicon and germanium. In this paper we explore the used of strain and heterostructure design guided…
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Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as silicon and germanium. In this paper we explore the used of strain and heterostructure design guided by bandstructure modeling to enhance the hole mobility in III-V materials. Parameters such as strain, valence band offset, effective masses and splitting between the light and heavy hole bands that are important for optimizing hole transport are measured quantitatively using various experimental techniques. A peak Hall mobility for the holes of 960cm2/Vs is demonstrated and the high hole mobility is maintained even at high sheet charge.
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Submitted 28 August, 2011;
originally announced August 2011.
