Showing 1–2 of 2 results for author: Muth, J F

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Authors: Tao Yang, Ben Sekely, Yashas Satapathy, Greg Allion, Philip Barletta, Carl Haber, Steve Holland, John F. Muth, Spyridon Pavlidis, Stefania Stucci

Abstract: 4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with… ▽ More 4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with $α$ particles from a $^{210}_{84}\rm{Po}$ source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD. △ Less

Submitted 11 September, 2024; v1 submitted 22 August, 2024; originally announced August 2024.

Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states

Authors: Y. D. Glinka, T. V. Shahbazyan, H. O. Everitt, J. F. Muth, J. Roberts, P. Rajagopal, J. Cook, E. Piner, K. Linthicum

Abstract: We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW's of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The… ▽ More We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW's of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound excitons. Two types of acceptors were identified. △ Less

Submitted 29 January, 2010; v1 submitted 12 May, 2009; originally announced May 2009.

Comments: 5 pages, 5 figures