Nanoscale trapping of interlayer excitons in a 2D semiconductor heterostructure
Authors:
Daniel N. Shanks,
Fateme Mahdikhanysarvejahany,
Christine Muccianti,
Adam Alfrey,
Michael R. Koehler,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Hongyi Yu,
Brian J. LeRoy,
John R. Schaibley
Abstract:
For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trapping approaches invol…
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For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trapping approaches involving moiré superlattices and nanopillars do not meet the quantum technology requirements of deterministic placement and energy tunability. Here, we use a nanopatterned graphene gate to create a sharply varying electric field in close proximity to a MoSe2-WSe2 heterostructure. The dipole interaction between the IX and the electric field creates an ~20 nm trap. The trapped IXs show the predicted electric field dependent energy, saturation at low excitation power, and increased lifetime, all signatures of strong spatial confinement. The demonstrated architecture is a crucial step towards deterministic trapping of single IXs, which has broad applications to scalable quantum technologies.
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Submitted 25 June, 2021; v1 submitted 16 March, 2021;
originally announced March 2021.
Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures
Authors:
Fateme Mahdikhanysarvejahany,
Daniel N. Meade,
Christine Muccianti,
Bekele H. Badada,
Ithwun Idi,
Adam Alfrey,
Sean Raglow,
Michael R. Koehler,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Oliver L. A. Monti,
Hongyi Yu,
Brian J. LeRoy,
John R. Schaibley
Abstract:
MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here, we perform a comprehensive study o…
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MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here, we perform a comprehensive study of the temperature, excitation power, and time-dependent PL of IXs. We observe a significant decrease in PL intensity above a transition temperature that we attribute to a transition from localized to delocalized IXs. Astoundingly, we find a simple inverse relationship between the IX PL energy and the transition temperature, which exhibits opposite power dependent behaviors for near 0° and 60° samples. We conclude that this temperature dependence is a result of IX-IX exchange interactions, whose effect is suppressed by the moiré potential trapping IXs at low temperature.
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Submitted 26 May, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
