The neutral silicon-vacancy center in diamond: spin polarization and lifetimes
Authors:
B. L. Green,
S. Mottishaw,
B. G. Breeze,
A. M. Edmonds,
U. F. S. D'Haenens-Johansson,
M. W. Doherty,
S. D. Williams,
D. J. Twitchen,
M. E. Newton
Abstract:
We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin…
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We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin relaxation limit of $T_1>25~\mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $\mathrm{SiV^{0}}$ and $\mathrm{NV^{-}}$ within the same optically-addressed volume, and $\mathrm{SiV^{0}}$ emits within the telecoms downconversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that $\mathrm{SiV^{0}}$ is a promising candidate for a long-range quantum communication technology.
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Submitted 29 May, 2017;
originally announced May 2017.
