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Atomistic theory of twist-angle dependent intralayer and interlayer exciton properties in twisted bilayer materials
Authors:
Indrajit Maity,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted bilayers of two-dimensional (2D) materials have emerged as a highly tunable platform to study and engineer properties of excitons. However, the atomistic description of these properties has remained a significant challenge as a consequence of the large unit cells of the emergent moiré superlattices. To address this problem, we introduce an efficient approach to solve the Bethe-Salpeter equ…
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Twisted bilayers of two-dimensional (2D) materials have emerged as a highly tunable platform to study and engineer properties of excitons. However, the atomistic description of these properties has remained a significant challenge as a consequence of the large unit cells of the emergent moiré superlattices. To address this problem, we introduce an efficient approach to solve the Bethe-Salpeter equation that exploits the localization of atomic Wannier functions. We then use this approach to study intra- and interlayer excitons in twisted WS$_{2}$/WSe$_{2}$ at a range of twist angles. In agreement with experiment, we find that the optical spectrum exhibits three low-energy peaks for twist angles small than $2^\circ$. The energy splitting between the peaks is described accurately. We also find two low-energy interlayer excitons with weak oscillator strengths. Our approach opens up new opportunities for the design of light-matter interactions in ultrathin materials.
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Submitted 28 August, 2024; v1 submitted 16 June, 2024;
originally announced June 2024.
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Coexisting charge density waves in twisted bilayer NbSe2
Authors:
Christopher T. S. Cheung,
Zachary A. H. Goodwin,
Yixuan Han,
Jiong Lu,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted bilayers of two-dimensional materials have emerged as a highly tunable platform for studying broken symmetry phases. While most interest has been focused on emergent states in systems whose constituent monolayers do not feature broken symmetry states, assembling monolayers that exhibit ordered states into twisted bilayers can also give rise to interesting phenomena. Here, we use large-scal…
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Twisted bilayers of two-dimensional materials have emerged as a highly tunable platform for studying broken symmetry phases. While most interest has been focused on emergent states in systems whose constituent monolayers do not feature broken symmetry states, assembling monolayers that exhibit ordered states into twisted bilayers can also give rise to interesting phenomena. Here, we use large-scale first-principles density-functional theory calculations to study the atomic structure of twisted bilayer $\mathrm{{N}b{S}e_2}$ whose constituent monolayers feature a charge density wave. We find that different charge density wave states coexist in the ground state of the twisted bilayer: monolayer-like $3\times 3$ triangular and hexagonal charge density waves are observed in low-energy stacking regions, while stripe charge density waves are found in the domain walls surrounding the low-energy stacking regions. These predictions, which can be tested by scanning tunneling microscopy experiments, highlight the potential to create complex charge density wave ground states in twisted bilayer systems and can serve as a starting point for understanding superconductivity occurring at low temperatures.
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Submitted 31 May, 2024;
originally announced May 2024.
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One-dimensional magnetic conduction channels across zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions
Authors:
Michele Pizzochero,
Nikita V. Tepliakov,
Johannes Lischner,
Arash A. Mostofi,
Efthimios Kaxiras
Abstract:
We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplored interface configurations in which both edges of the nanoribbon are bonded to the same chemical species, either boron or nitrogen atoms. Using ab initio and mean-field Hubbard model calculations, we reveal the emergen…
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We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplored interface configurations in which both edges of the nanoribbon are bonded to the same chemical species, either boron or nitrogen atoms. Using ab initio and mean-field Hubbard model calculations, we reveal the emergence of one-dimensional magnetic conducting channels at these interfaces. These channels originate from the energy shift of the magnetic interface states that is induced by charge transfer between the nanoribbon and hexagonal boron nitride. We further address the response of these heterojunctions to external electric and magnetic fields, demonstrating the tunability of energy and spin splittings in the electronic structure. Our findings establish that zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions are a suitable platform for exploring and engineering spin transport in the atomically thin limit, with potential applications in integrated spintronic devices
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Submitted 31 May, 2024;
originally announced May 2024.
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The Wannier-Functions Software Ecosystem for Materials Simulations
Authors:
Antimo Marrazzo,
Sophie Beck,
Elena R. Margine,
Nicola Marzari,
Arash A. Mostofi,
Junfeng Qiao,
Ivo Souza,
Stepan S. Tsirkin,
Jonathan R. Yates,
Giovanni Pizzi
Abstract:
Over the last two decades, following the early developments on maximally-localized Wannier functions, an ecosystem of electronic-structure simulation techniques and software leveraging the Wannier representation has flourished. This environment includes codes to obtain Wannier functions and interfaces with first-principles simulation software, as well as an increasing number of related post-proces…
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Over the last two decades, following the early developments on maximally-localized Wannier functions, an ecosystem of electronic-structure simulation techniques and software leveraging the Wannier representation has flourished. This environment includes codes to obtain Wannier functions and interfaces with first-principles simulation software, as well as an increasing number of related post-processing packages. Wannier functions can be obtained for isolated or extended systems (both crystalline and disordered), and can be used to understand chemical bonding, to characterize polarization, magnetization, and topology, or as an optimal basis set, providing very accurate interpolations in reciprocal space or large-scale Hamiltonians in real space. In this review, we summarize the current landscape of techniques, materials properties and simulation codes based on Wannier functions that have been made accessible to the research community, and that are now well integrated into what we term a \emph{Wannier-functions software ecosystem}. First we introduce the theory and practicalities of Wannier functions, starting from their broad domains of applicability to advanced minimization methods using alternative approaches beyond maximal localization. Then we define the concept of a Wannier ecosystem and its interactions and interoperability with many quantum engines and post-processing packages. We focus on some of the key properties that are empowered by such ecosystem\textemdash from band interpolations and large-scale simulations to electronic transport, Berryology, topology, electron-phonon couplings, dynamical mean-field theory, embedding, and Koopmans functionals\textemdash concluding with the current status of interoperability and automation. The review aims at highlighting basic theory and concepts behind codes, providing relevant pointers to more in-depth references.
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Submitted 17 December, 2023;
originally announced December 2023.
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Optical Properties of Charged Defects in Monolayer MoS$_2$
Authors:
Martik Aghajanian,
Arash A. Mostofi,
Johannes Lischner
Abstract:
We present theoretical calculations of the optical spectrum of monolayer MoS$_2$ with a charged defect. In particular, we solve the Bethe-Salpeter equation based on an atomistic tight-binding model of the MoS$_2$ electronic structure which allows calculations for large supercells. The defect is modelled as a point charge whose potential is screened by the MoS$_2$ electrons. We find that the defect…
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We present theoretical calculations of the optical spectrum of monolayer MoS$_2$ with a charged defect. In particular, we solve the Bethe-Salpeter equation based on an atomistic tight-binding model of the MoS$_2$ electronic structure which allows calculations for large supercells. The defect is modelled as a point charge whose potential is screened by the MoS$_2$ electrons. We find that the defect gives rise to new peaks in the optical spectrum approximately 100-200 meV below the first free exciton peak. These peaks arise from transitions involving in-gap bound states induced by the charged defect. Our findings are in good agreement with experimental measurements.
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Submitted 9 July, 2023;
originally announced July 2023.
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Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/hexagonal boron nitride heterojunctions
Authors:
Nikita V. Tepliakov,
Ruize Ma,
Johannes Lischner,
Efthimios Kaxiras,
Arash A. Mostofi,
Michele Pizzochero
Abstract:
Half-metals have been envisioned as active components in spintronic devices by virtue of their completely spin-polarized electrical currents. Actual materials hosting half-metallic phases, however, remain scarce. Here, we predict that recently fabricated heterojunctions of zigzag nanoribbons embedded in two-dimensional hexagonal boron nitride are half-semimetallic, featuring fully spin-polarized D…
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Half-metals have been envisioned as active components in spintronic devices by virtue of their completely spin-polarized electrical currents. Actual materials hosting half-metallic phases, however, remain scarce. Here, we predict that recently fabricated heterojunctions of zigzag nanoribbons embedded in two-dimensional hexagonal boron nitride are half-semimetallic, featuring fully spin-polarized Dirac points at the Fermi level. The half-semimetallicity originates from the transfer of charges from hexagonal boron nitride to the embedded graphene nanoribbon. These charges give rise to opposite energy shifts of the states residing at the two edges while preserving their intrinsic antiferromagnetic exchange coupling. Upon doping, an antiferromagnetic-to-ferrimagnetic phase transition occurs in these heterojunctions, with the sign of the excess charge controlling the spatial localization of the net magnetic moments. Our findings demonstrate that such heterojunctions realize tunable one-dimensional conducting channels of spin-polarized Dirac fermions that are seamlessly integrated into a two-dimensional insulator, thus holding promise for the development of carbon-based spintronics.
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Submitted 24 May, 2023;
originally announced May 2023.
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Electrons surf phason waves in moiré bilayers
Authors:
Indrajit Maity,
Arash A. Mostofi,
Johannes C. Lischner
Abstract:
We investigate the effect of thermal fluctuations on the atomic and electronic structure of a twisted MoSe$_{2}$/WSe$_{2}$ heterobilayer using a combination of classical molecular dynamics and \textit{ab-initio} density functional theory calculations. Our calculations reveal that thermally excited phason modes give rise to an almost rigid motion of the moiré lattice. Electrons and holes in low-ene…
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We investigate the effect of thermal fluctuations on the atomic and electronic structure of a twisted MoSe$_{2}$/WSe$_{2}$ heterobilayer using a combination of classical molecular dynamics and \textit{ab-initio} density functional theory calculations. Our calculations reveal that thermally excited phason modes give rise to an almost rigid motion of the moiré lattice. Electrons and holes in low-energy states are localized in specific stacking regions of the moiré unit cell and follow the thermal motion of these regions. In other words, charge carriers surf phason waves that are excited at finite temperatures. Small displacements at the atomic scale are amplified at the moiré scale, which gives rise to significant surfing speeds. We also show that such surfing survives in the presence of a substrate and disorder. This effect has potential implications for the design of charge and exciton transport devices based on moiré materials.
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Submitted 20 February, 2023;
originally announced February 2023.
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The origin of strain-induced stabilisation of superconductivity in the lanthanum cuprates
Authors:
Christopher Keegan,
Mark S. Senn,
Nicholas C. Bristowe,
Arash A. Mostofi
Abstract:
Suppression of superconductivity in favour of a striped phase, and its coincidence with a structural transition from a low-temperature orthorhombic (LTO) to a low-temperature tetragonal (LTT) phase, is a ubiquitous feature of hole-doped lanthanum cuprates. We study the effect of anisotropic strain on this transition using density-functional theory on both La$_2$CuO$_4$ and the recently-synthesised…
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Suppression of superconductivity in favour of a striped phase, and its coincidence with a structural transition from a low-temperature orthorhombic (LTO) to a low-temperature tetragonal (LTT) phase, is a ubiquitous feature of hole-doped lanthanum cuprates. We study the effect of anisotropic strain on this transition using density-functional theory on both La$_2$CuO$_4$ and the recently-synthesised surrogate La$_2$MgO$_4$ to decouple electronic and structural effects. Strikingly, we find that compressive strain applied diagonally to the in-plane metal-oxygen bonds dramatically stabilises the LTO phase. Given the mutual exclusivity of 3D superconductivity and long-range static stripe order, we thereby suggest a structural mechanism for understanding experimentally-observed trends in the superconducting $T_{\mathrm{c}}$ under uniaxial pressure, and suggest principles for tuning it.
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Submitted 6 March, 2023; v1 submitted 19 February, 2023;
originally announced February 2023.
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Effect of Coulomb impurities on the electronic structure of magic angle twisted bilayer graphene
Authors:
Muhammad Sufyan Ramzan,
Zachary A. H. Goodwin,
Arash A. Mostofi,
Agnieszka Kuc,
Johannes Lischner
Abstract:
In graphene, charged defects break the electron-hole symmetry and can even give rise to exotic collapse states when the defect charge exceeds a critical value which is proportional to the Fermi velocity. In this work, we investigate the electronic properties of twisted bilayer graphene (tBLG) with charged defects using tight-binding calculations. Like monolayer graphene, tBLG exhibits linear bands…
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In graphene, charged defects break the electron-hole symmetry and can even give rise to exotic collapse states when the defect charge exceeds a critical value which is proportional to the Fermi velocity. In this work, we investigate the electronic properties of twisted bilayer graphene (tBLG) with charged defects using tight-binding calculations. Like monolayer graphene, tBLG exhibits linear bands near the Fermi level but with a dramatically reduced Fermi velocity near the magic angle (approximately 1.1°). This suggests that the critical value of the defect charge in magic-angle tBLG should also be very small. We find that charged defects give rise to significant changes in the low-energy electronic structure of tBLG. Depending on the defect position in the moiré unit cell, it is possible to open a band gap or to induce an additional flattening of the low-energy valence and conduction bands. Our calculations suggest that the collapse states of the two monolayers hybridize in the twisted bilayer. However, their in-plane localization remains largely unaffected by the presence of the additional twisted layer because of the different length scales of the moiré lattice and the monolayer collapse state wavefunctions. These predictions can be tested in scanning tunnelling spectroscopy experiments.
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Submitted 20 February, 2023; v1 submitted 2 November, 2022;
originally announced November 2022.
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Unveiling and Manipulating Hidden Symmetries in Graphene Nanoribbons
Authors:
Nikita V. Tepliakov,
Johannes Lischner,
Efthimios Kaxiras,
Arash A. Mostofi,
Michele Pizzochero
Abstract:
Armchair graphene nanoribbons are a highly promising class of semiconductors for all-carbon nanocircuitry. Here, we present a new perspective on their electronic structure from simple model Hamiltonians and $\textit{ab initio}$ calculations. We focus on a specific set of nanoribbons of width $n = 3p+2$, where $n$ is the number of carbon atoms across the nanoribbon axis and $p$ is a positive intege…
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Armchair graphene nanoribbons are a highly promising class of semiconductors for all-carbon nanocircuitry. Here, we present a new perspective on their electronic structure from simple model Hamiltonians and $\textit{ab initio}$ calculations. We focus on a specific set of nanoribbons of width $n = 3p+2$, where $n$ is the number of carbon atoms across the nanoribbon axis and $p$ is a positive integer. We demonstrate that the energy-gap opening in these nanoribbons originates from the breaking of a previously unidentified hidden symmetry by long-ranged hopping of $π$-electrons and structural distortions occurring at the edges. This hidden symmetry can be restored or manipulated through the application of in-plane lattice strain, which enables continuous energy-gap tuning, the emergence of Dirac points at the Fermi level, and topological quantum phase transitions. Our work establishes an original interpretation of the semiconducting character of armchair graphene nanoribbons and offers guidelines for rationally designing their electronic structure.
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Submitted 29 November, 2022; v1 submitted 5 March, 2022;
originally announced March 2022.
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Electronic Structure of Monolayer and Bilayer Black Phosphorus with Charged Defects
Authors:
Martik Aghajanian,
Arash A. Mostofi,
Johannes Lischner
Abstract:
We use an atomistic approach to study the electronic properties of monolayer and bilayer black phosphorus in the vicinity of a charged defect. In particular, we combine screened defect potentials obtained from first-principles linear response theory with large-scale tight-binding simulations to calculate the wavefunctions and energies of bound acceptor and donor states. As a consequence of the ani…
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We use an atomistic approach to study the electronic properties of monolayer and bilayer black phosphorus in the vicinity of a charged defect. In particular, we combine screened defect potentials obtained from first-principles linear response theory with large-scale tight-binding simulations to calculate the wavefunctions and energies of bound acceptor and donor states. As a consequence of the anisotropic band structure, the defect states in these systems form distorted hydrogenic orbitals with a different ordering than in isotropic materials. For the monolayer, we study the dependence of the binding energies of charged adsorbates on the defect height and the dielectric constant of a substrate in an experimental setup. We also compare our results to an anisotropic effective mass model and find quantitative and qualitative differences when the charged defect is close to the black phosphorus or when the screening from the substrate is weak. For the bilayer, we compare results for charged adsorbates and charged intercalants and find that intercalants induce more prominent secondary peaks in the local density of states because they interact strongly with electronic states on both layers. These new insights can be directly tested in scanning tunneling spectroscopy measurements and enable a detailed understanding of the role of Coulomb impurities in electronic devices.
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Submitted 18 December, 2021; v1 submitted 10 December, 2021;
originally announced December 2021.
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Structural origins of the infamous "Low Temperature Orthorhombic" to "Low Temperature Tetragonal" phase transition in high-Tc cuprates
Authors:
Jeremiah P. Tidey,
Christopher Keegan,
Nicholas C. Bristowe,
Arash A. Mostofi,
Zih-Mei Hong,
Bo-Hao Chen,
Yu-Chun Chuang,
Wei-Tin Chen,
Mark S. Senn
Abstract:
We undertake a detailed high-resolution diffraction study of a novel plain band insulator, La$_2$MgO$_4$, which may be viewed as a structural surrogate system of the undoped end-member of the high-T$_c$ superconductors, La$_{2-x-y}$A$^{2+}_x$RE$^{3+}_y$CuO$_{4}$ (A = Ba, Sr, RE= Rare Earth). We find that La$_2$MgO$_4$ exhibits the infamous low-temperature orthorhombic (LTO) to low-temperature tetr…
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We undertake a detailed high-resolution diffraction study of a novel plain band insulator, La$_2$MgO$_4$, which may be viewed as a structural surrogate system of the undoped end-member of the high-T$_c$ superconductors, La$_{2-x-y}$A$^{2+}_x$RE$^{3+}_y$CuO$_{4}$ (A = Ba, Sr, RE= Rare Earth). We find that La$_2$MgO$_4$ exhibits the infamous low-temperature orthorhombic (LTO) to low-temperature tetragonal (LTT) phase transition that has been linked to the suppression of superconductivity in a variety of underdoped cuprates, including the well known La$_{2-x}$Ba$_{x}$CuO$_4$ ($x=0.125$). Furthermore, we find that the LTO-to-LTT phase transition in La$_2$MgO$_4$ occurs for an octahedral tilt angle in the 4 $^{\circ}$ to 5 $^{\circ}$ range, similar to that which has previously been identified as a critical tipping point for superconductivity in these systems. We show that this phase transition, occurring in a system lacking spin correlations and competing electronic states such as charge-density waves and superconductivity, can be understood by simply navigating the density-functional theory ground-state energy landscape as a function of the order parameter amplitude. This result calls for a careful re-investigation of the origins of the phase transitions in high-T$_c$ superconductors based on the hole-doped, $n = 1$ Ruddelsden-Popper lanthanum cuprates.
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Submitted 23 November, 2021;
originally announced November 2021.
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Atomistic hartree theory and crystal field of twisted double bilayer graphene near the magic angle
Authors:
Christopher T. S. Cheung,
Zachary A. H. Goodwin,
Valerio Vitale,
Johannes Lischner,
Arash A. Mostofi
Abstract:
Twisted double bilayer graphene (tDBLG) is a moiré material that has recently generated significant interest because of the observation of correlated phases near the magic angle. We carry out atomistic Hartree theory calculations to study the role of electron-electron interactions in the normal state. In contrast to twisted bilayer graphene (tBLG), we find that such interactions do not result in s…
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Twisted double bilayer graphene (tDBLG) is a moiré material that has recently generated significant interest because of the observation of correlated phases near the magic angle. We carry out atomistic Hartree theory calculations to study the role of electron-electron interactions in the normal state. In contrast to twisted bilayer graphene (tBLG), we find that such interactions do not result in significant doping-dependent deformations of the electronic band structure. However, interactions play an important role for the electronic structure in the presence of a perpendicular electric field as they screen the external field. Finally, we analyze the contribution of the Hartree potential to the crystal field, i.e. the on-site energy difference between the inner and outer layers. We find that the on-site energy obtained from Hartree theory has the same sign, but a smaller magnitude compared to previous studies in which the on-site energy was determined by fitting tight-binding results to ab initio density-functional theory (DFT) band structures. To understand this quantitative difference, we analyze the ab initio Kohn-Sham potential obtained from DFT and find that a subtle interplay of electron-electron and electron-ion interactions determines the magnitude of the on-site potential.
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Submitted 9 March, 2022; v1 submitted 4 November, 2021;
originally announced November 2021.
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Substitutional tin acceptor states in black phosphorus
Authors:
Mark Wentink,
Julian Gaberle,
Martik Aghajanian,
Arash A. Mostofi,
Neil J. Curson,
Johannes Lischner,
Steven R. Schofield,
Alexander L. Shluger,
Anthony J. Kenyon
Abstract:
Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reveal the presence of long-ranged double-lobed defect features superimposed onto the surface atomic lattice. We show that both the p-type doping of BP an…
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Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reveal the presence of long-ranged double-lobed defect features superimposed onto the surface atomic lattice. We show that both the p-type doping of BP and the defect features observed in STM images can be attributed to substitutional tin impurities. We show that black phosphorus samples produced through two common synthesis pathways contain tin impurities, and we demonstrate that the ground state of substitutional tin impurities is negatively charged for a wide range of Fermi level positions within the BP bandgap. The localised negative charge of the tin impurities induces hydrogenic states in the bandgap and it is the 2p level that sits at the valence band edge that gives rise to the double-lobed features observed in STM images.
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Submitted 19 October, 2021;
originally announced October 2021.
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Electrically Induced Dirac Fermions in Graphene Nanoribbons
Authors:
Michele Pizzochero,
Nikita V. Tepliakov,
Arash A. Mostofi,
Efthimios Kaxiras
Abstract:
Graphene nanoribbons are widely regarded as promising building blocks for next-generation carbon-based devices. A critical issue to their prospective applications is whether and to what degree their electronic structure can be externally controlled. Here, we combine simple model Hamiltonians with extensive first-principles calculations to investigate the response of armchair graphene nanoribbons t…
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Graphene nanoribbons are widely regarded as promising building blocks for next-generation carbon-based devices. A critical issue to their prospective applications is whether and to what degree their electronic structure can be externally controlled. Here, we combine simple model Hamiltonians with extensive first-principles calculations to investigate the response of armchair graphene nanoribbons to transverse electric fields. Such fields can be achieved either upon laterally gating the nanoribbon or incorporating ambipolar chemical co-dopants along the edges. We reveal that the field induces a semiconductor-to-semimetal transition, with the semimetallic phase featuring zero-energy Dirac fermions that propagate along the armchair edges. The transition occurs at critical fields that scale inversely with the width of the nanoribbons. These findings are universal to group-IV honeycomb lattices, including silicene and germanene nanoribbons, irrespective of the type of edge termination. Overall, our results create new opportunities to electrically engineer Dirac fermions in otherwise semiconducting graphene-like nanoribbons.
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Submitted 15 September, 2021;
originally announced September 2021.
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Chiral valley phonons and flat phonon bands in moiré materials
Authors:
Indrajit Maity,
Arash A. Mostofi,
Johannes Lischner
Abstract:
We investigate the chirality of phonon modes in twisted bilayer WSe2 and demonstrate distinct chiral behavior of the $K/K^\prime$ valley phonons for twist angles close to $0^{\circ}$ and close to $60^{\circ}$. In particular, multiple chiral non-degenerate $K/K^\prime$ valley phonons are found for twist angles near $60^{\circ}$ whereas no non-degenerate chiral modes are found for twist angles close…
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We investigate the chirality of phonon modes in twisted bilayer WSe2 and demonstrate distinct chiral behavior of the $K/K^\prime$ valley phonons for twist angles close to $0^{\circ}$ and close to $60^{\circ}$. In particular, multiple chiral non-degenerate $K/K^\prime$ valley phonons are found for twist angles near $60^{\circ}$ whereas no non-degenerate chiral modes are found for twist angles close to $0^\circ$. Moreover, we discover two sets of emergent chiral valley modes that originate from an inversion symmetry breaking at the moiré scale and find similar modes in moiré patterns of strain-engineered bilayers WSe2 and MoSe2/WSe2 heterostructures. At the energy gap between acoustic and optical modes, the formation of flat phonon bands for a broad range of twist angles is observed in the twisted bilayer WSe2. Our findings are relevant for understanding electron-phonon and exciton-phonon scattering in moiré materials and also for the design of phononic analogues of flat band electrons.
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Submitted 4 January, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Flat bands, electron interactions and magnetic order in magic-angle mono-trilayer graphene
Authors:
Zachary A. H. Goodwin,
Lennart Klebl,
Valerio Vitale,
Xia Liang,
Vivek Gogtay,
Xavier van Gorp,
Dante M. Kennes,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Starting with twisted bilayer graphene, graphene-based moiré materials have recently been established as a new platform for studying strong electron correlations. In this paper, we study twisted graphene monolayers on trilayer graphene and demonstrate that this system can host flat bands when the twist angle is close to the magic-angle of 1.16$^\circ$. When monolayer graphene is twisted on ABA tri…
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Starting with twisted bilayer graphene, graphene-based moiré materials have recently been established as a new platform for studying strong electron correlations. In this paper, we study twisted graphene monolayers on trilayer graphene and demonstrate that this system can host flat bands when the twist angle is close to the magic-angle of 1.16$^\circ$. When monolayer graphene is twisted on ABA trilayer graphene, the flat bands are not isolated, but are intersected by a Dirac cone with a large Fermi velocity. In contrast, graphene twisted on ABC trilayer graphene (denoted AtABC) exhibits a gap between flat and remote bands. Since ABC trilayer graphene and twisted bilayer graphene are known to host broken-symmetry phases, we further investigate the ostensibly similar magic angle AtABC system. We study the effect of electron-electron interactions in AtABC using both Hartree theory and an atomic Hubbard theory to calculate the magnetic phase diagram as a function of doping, twist angle, and perpendicular electric field. Our analysis reveals a rich variety of magnetic orderings, including ferromagnetism and ferrimagnetism, and demonstrates that a perpendicular electric field makes AtABC more susceptible to magnetic ordering.
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Submitted 23 August, 2021; v1 submitted 26 May, 2021;
originally announced May 2021.
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Unconventional Superconductivity in Magic-Angle Twisted Trilayer Graphene
Authors:
Ammon Fischer,
Zachary A. H. Goodwin,
Arash A. Mostofi,
Johannes Lischner,
Dante M. Kennes,
Lennart Klebl
Abstract:
Magic-angle twisted trilayer graphene (MATTG) recently emerged as a highly tunable platform for studying correlated phases of matter, such as correlated insulators and superconductivity. Superconductivity occurs in a range of doping levels that is bounded by van Hove singularities which stimulates the debate of the origin and nature of superconductivity in this material. In this work, we discuss t…
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Magic-angle twisted trilayer graphene (MATTG) recently emerged as a highly tunable platform for studying correlated phases of matter, such as correlated insulators and superconductivity. Superconductivity occurs in a range of doping levels that is bounded by van Hove singularities which stimulates the debate of the origin and nature of superconductivity in this material. In this work, we discuss the role of spin-fluctuations arising from atomic-scale correlations in MATTG for the superconducting state. We show that in a phase diagram as function of doping ($ν$) and temperature, nematic superconducting regions are surrounded by ferromagnetic states and that a superconducting dome with $T_c \approx 2\,\mathrm{K}$ appears between the integer fillings $ν=-2$ and $ν= -3$. Applying a perpendicular electric field enhances superconductivity on the electron-doped side which we relate to changes in the spin-fluctuation spectrum. We show that the nematic unconventional superconductivity leads to pronounced signatures in the local density of states detectable by scanning tunneling spectroscopy measurements.
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Submitted 14 January, 2022; v1 submitted 20 April, 2021;
originally announced April 2021.
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Accurate and efficient computation of optical absorption spectra of molecular crystals: the case of the polymorphs of ROY
Authors:
Joseph C. A. Prentice,
Arash A. Mostofi
Abstract:
When calculating the optical absorption spectra of molecular crystals from first principles, the influence of the crystalline environment on the excitations is of significant importance. For such systems, however, methods to describe the excitations accurately can be computationally prohibitive due to the relatively large system sizes involved. In this work, we demonstrate a method that allows opt…
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When calculating the optical absorption spectra of molecular crystals from first principles, the influence of the crystalline environment on the excitations is of significant importance. For such systems, however, methods to describe the excitations accurately can be computationally prohibitive due to the relatively large system sizes involved. In this work, we demonstrate a method that allows optical absorption spectra to be computed both efficiently and at high accuracy. Our approach is based on the spectral warping method successfully applied to molecules in solvent. It involves calculating the absorption spectrum of a supercell of the full molecular crystal using semi-local TDDFT, before warping the spectrum using a transformation derived from smaller-scale semi-local and hybrid TDDFT calculations on isolated dimers. We demonstrate the power of this method on three polymorphs of the well known colour polymorphic compound ROY, and find that it outperforms both small-scale hybrid TDDFT dimer calculations and large-scale semi-local TDDFT supercell calculations, when compared to experiment.
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Submitted 2 July, 2021; v1 submitted 22 March, 2021;
originally announced March 2021.
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Flat band properties of twisted transition metal dichalcogenide homo- and heterobilayers of MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$
Authors:
Valerio Vitale,
Kemal Atalar,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat electronic bands that enable the observation of electron correlation effects. In this work, we study the electronic structure of twisted transition metal dichalcogenide (TMD) homo- and heterobilayers that are obtained by combining MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$ monolayers, and show how flat b…
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Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat electronic bands that enable the observation of electron correlation effects. In this work, we study the electronic structure of twisted transition metal dichalcogenide (TMD) homo- and heterobilayers that are obtained by combining MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$ monolayers, and show how flat band properties depend on the chemical composition of the bilayer as well as its twist angle. We determine the relaxed atomic structure of the twisted bilayers using classical force fields and calculate the electronic band structure using a tight-binding model parametrized from first-principles density-functional theory. We find that the highest valence bands in these systems can derive either from $Γ$-point or $K$/$K'$-point states of the constituent monolayers. For homobilayers, the two highest valence bands are composed of monolayer $Γ$-point states, exhibit a graphene-like dispersion and become flat as the twist angle is reduced. The situation is more complicated for heterobilayers where the ordering of $Γ$-derived and $K$/$K'$-derived states depends both on the material composition and also the twist angle. In all systems, qualitatively different band structures are obtained when atomic relaxations are neglected.
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Submitted 17 May, 2021; v1 submitted 5 February, 2021;
originally announced February 2021.
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Importance of long-ranged electron-electron interactions for the magnetic phase diagram of twisted bilayer graphene
Authors:
Lennart Klebl,
Zachary A. H. Goodwin,
Arash A. Mostofi,
Dante M. Kennes,
Johannes Lischner
Abstract:
Electron-electron interactions are intrinsically long ranged, but many models of strongly interacting electrons only take short-ranged interactions into account. Here, we present results of atomistic calculations including both long-ranged and short-ranged electron-electron interactions for the magnetic phase diagram of twisted bilayer graphene and demonstrate that qualitatively different results…
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Electron-electron interactions are intrinsically long ranged, but many models of strongly interacting electrons only take short-ranged interactions into account. Here, we present results of atomistic calculations including both long-ranged and short-ranged electron-electron interactions for the magnetic phase diagram of twisted bilayer graphene and demonstrate that qualitatively different results are obtained when long-ranged interactions are neglected. In particular, we use Hartree theory augmented with Hubbard interactions and calculate the interacting spin susceptibility at a range of doping levels and twist angles near the magic angle to identify the dominant magnetic instabilities. At the magic angle, mostly anti-ferromagnetic order is found, while ferromagnetism dominates at other twist angles. Moreover, long-ranged interactions significantly increase the twist angle window in which strong correlation phenomena can be expected. These findings are in good agreement with available experimental data.
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Submitted 28 April, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
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Effect of bilayer stacking on the atomic and electronic structure of twisted double bilayer graphene
Authors:
Xia Liang,
Zachary A. H. Goodwin,
Valerio Vitale,
Fabiano Corsetti,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted double bilayer graphene has recently emerged as an interesting moiré material that exhibits strong correlation phenomena that are tunable by an applied electric field. Here we study the atomic and electronic properties of three different graphene double bilayers: double bilayers composed of two AB stacked bilayers (AB/AB), double bilayers composed of two AA stacked bilayers (AA/AA) as well…
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Twisted double bilayer graphene has recently emerged as an interesting moiré material that exhibits strong correlation phenomena that are tunable by an applied electric field. Here we study the atomic and electronic properties of three different graphene double bilayers: double bilayers composed of two AB stacked bilayers (AB/AB), double bilayers composed of two AA stacked bilayers (AA/AA) as well as heterosystems composed of one AB and one AA bilayer (AB/AA). The atomic structure is determined using classical force fields. We find that the inner layers of the double bilayer exhibit significant in-plane and out-of-plane relaxations, similar to twisted bilayer graphene. The relaxations of the outer layers depend on the stacking: atoms in AB bilayers follow the relaxations of the inner layers, while atoms in AA bilayers attempt to avoid higher-energy AA stacking. For the relaxed structures, we calculate the electronic band structures using the tight-binding method. All double bilayers exhibit flat bands at small twist angles, but the shape of the bands depends sensitively on the stacking of the outer layers. To gain further insight, we study the evolution of the band structure as the outer layers are rigidly moved away from the inner layers, while preserving their atomic relaxations. This reveals that the hybridization with the outer layers results in an additional flattening of the inner-layer flat band manifold. Our results establish AA/AA and AB/AA twisted double bilayers as interesting moiré materials with different flat band physics compared to the widely studied AB/AB system.
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Submitted 26 October, 2020; v1 submitted 12 August, 2020;
originally announced August 2020.
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The CECAM Electronic Structure Library and the modular software development paradigm
Authors:
Micael J. T. Oliveira,
Nick Papior,
Yann Pouillon,
Volker Blum,
Emilio Artacho,
Damien Caliste,
Fabiano Corsetti,
Stefano de Gironcoli,
Alin M. Elena,
Alberto Garcia,
Victor M. Garcia-Suarez,
Luigi Genovese,
William P. Huhn,
Georg Huhs,
Sebastian Kokott,
Emine Kucukbenli,
Ask H. Larsen,
Alfio Lazzaro,
Irina V. Lebedeva,
Yingzhou Li,
David Lopez-Duran,
Pablo Lopez-Tarifa,
Martin Luders,
Miguel A. L. Marques,
Jan Minar
, et al. (12 additional authors not shown)
Abstract:
First-principles electronic structure calculations are very widely used thanks to the many successful software packages available. Their traditional coding paradigm is monolithic, i.e., regardless of how modular its internal structure may be, the code is built independently from others, from the compiler up, with the exception of linear-algebra and message-passing libraries. This model has been qu…
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First-principles electronic structure calculations are very widely used thanks to the many successful software packages available. Their traditional coding paradigm is monolithic, i.e., regardless of how modular its internal structure may be, the code is built independently from others, from the compiler up, with the exception of linear-algebra and message-passing libraries. This model has been quite successful for decades. The rapid progress in methodology, however, has resulted in an ever increasing complexity of those programs, which implies a growing amount of replication in coding and in the recurrent re-engineering needed to adapt to evolving hardware architecture. The Electronic Structure Library (\esl) was initiated by CECAM (European Centre for Atomic and Molecular Calculations) to catalyze a paradigm shift away from the monolithic model and promote modularization, with the ambition to extract common tasks from electronic structure programs and redesign them as free, open-source libraries. They include "heavy-duty" ones with a high degree of parallelisation, and potential for adaptation to novel hardware within them, thereby separating the sophisticated computer science aspects of performance optimization and re-engineering from the computational science done by scientists when implementing new ideas. It is a community effort, undertaken by developers of various successful codes, now facing the challenges arising in the new model. This modular paradigm will improve overall coding efficiency and enable specialists (computer scientists or computational scientists) to use their skills more effectively. It will lead to a more sustainable and dynamic evolution of software as well as lower barriers to entry for new developers.
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Submitted 24 June, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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Hartree theory calculations of quasiparticle properties in twisted bilayer graphene
Authors:
Zachary A. H. Goodwin,
Valerio Vitale,
Xia Liang,
Arash A. Mostofi,
Johannes Lischner
Abstract:
A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate qua…
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A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate quasiparticle properties, such as the band structure, density of states (DOS) and local density of states (LDOS), which are directly accessible in photoemission and tunnelling spectroscopy experiments. We find that quasiparticle properties change significantly upon doping - an effect which is not captured by tight-binding theory. In particular, we observe that the partially occupied bands flatten significantly which enhances the density of states at the Fermi level. We predict a clear signature of this band flattening in the LDOS in the AB/BA regions of tBLG which can be tested in scanning tunneling experiments. We also study the dependence of quasiparticle properties on the dielectric environment of tBLG and discover that these properties are surprisingly robust as a consequence of the strong internal screening. Finally, we present a simple analytical expression for the Hartree potential which enables the determination of quasiparticle properties without the need for self-consistent calculations.
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Submitted 1 July, 2020; v1 submitted 30 April, 2020;
originally announced April 2020.
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From first- to second-order phase transitions in hybrid improper ferroelectrics through entropy stabilisation
Authors:
Fernando Pomiro,
Chris Ablitt,
Nicholas C. Bristowe,
Arash A. Mostofi,
Coongjae Won,
Sang-Wook Cheong,
Mark S. Senn
Abstract:
Hybrid improper ferroelectrics (HIFs) have been intensely studied over the last few years to gain understanding of their temperature induced phase transitions and ferroelectric switching pathways. Here we report a switching from first- to second-order phase transition pathway for topical HIFs $Ca_{3-x}Sr_xTi_2O_7$, which is driven by the differing entropies of the phases that we identify as being…
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Hybrid improper ferroelectrics (HIFs) have been intensely studied over the last few years to gain understanding of their temperature induced phase transitions and ferroelectric switching pathways. Here we report a switching from first- to second-order phase transition pathway for topical HIFs $Ca_{3-x}Sr_xTi_2O_7$, which is driven by the differing entropies of the phases that we identify as being associated with the dynamic motion of octahedral tilts and rotations. A greater understanding of the transition pathways in this class of layered perovskites, which host many physical properties that are coupled to specific symmetries and octahedral rotation and tilt distortions -- such as superconductivity, negative thermal expansion, fast ion conductivity, ferroelectricity, among others -- is a crucial step in creating novel functional materials by design.
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Submitted 20 February, 2020; v1 submitted 15 January, 2020;
originally announced January 2020.
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Critical role of device geometry for the phase diagram of twisted bilayer graphene
Authors:
Zachary A. H. Goodwin,
Valerio Vitale,
Fabiano Corsetti,
Dmitri K. Efetov,
Arash A. Mostofi,
Johannes Lischner
Abstract:
The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted bilayer graphene (tBLG) on the separation to the metallic gate(s) in two device configurations. Using an atomistic tight-binding model, we determine the Hubbard para…
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The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted bilayer graphene (tBLG) on the separation to the metallic gate(s) in two device configurations. Using an atomistic tight-binding model, we determine the Hubbard parameters of the flat bands as a function of gate separation, taking into account the screening from the metallic gate(s), the dielectric spacer layers and the tBLG itself. We determine the critical gate separation at which the Hubbard parameters become smaller than the critical value required for a transition from a correlated insulator state to a (semi-)metallic phase. We show how this critical gate separation depends on twist angle, doping and the device configuration. These calculations may help rationalise the reported differences between recent measurements of tBLG's phase diagram and suggests that correlated insulator states can be screened out in devices with thin dielectric layers.
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Submitted 22 November, 2019; v1 submitted 19 November, 2019;
originally announced November 2019.
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Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors
Authors:
Martik Aghajanian,
Bruno Schuler,
Katherine A. Cochrane,
Jun-Ho Lee,
Christoph Kastl,
Jeffrey B. Neaton,
Alexander Weber-Bargioni,
Arash A. Mostofi,
Johannes Lischner
Abstract:
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave functi…
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A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at $Γ$ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.
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Submitted 5 September, 2019;
originally announced September 2019.
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Attractive electron-electron interactions from internal screening in magic angle twisted bilayer graphene
Authors:
Zachary A. H. Goodwin,
Fabiano Corsetti,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted bilayer graphene (tBLG) has recently emerged as a new platform for studying electron correlations, the strength of which can be controlled via the twist angle. Here, we study the effect of internal screening on electron-electron interactions in undoped tBLG. Using the random phase approximation, we find that the dielectric response of tBLG drastically increases near the magic angle and is…
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Twisted bilayer graphene (tBLG) has recently emerged as a new platform for studying electron correlations, the strength of which can be controlled via the twist angle. Here, we study the effect of internal screening on electron-electron interactions in undoped tBLG. Using the random phase approximation, we find that the dielectric response of tBLG drastically increases near the magic angle and is highly twist-angle dependent. As a consequence of the abrupt change of the Fermi velocity as a function of wave vector, the screened interaction in real space exhibits attractive regions for certain twist angles near the magic angle. Attractive interactions can induce charge density waves and superconductivity and therefore our findings could be relevant to understand the microscopic origins of the recently observed strong correlation phenomena in undoped tBLG. The resulting screened Hubbard parameters are strongly reduced and exhibit a non-linear dependence on the twist angle. We also carry out calculations with the constrained random phase approximation and parametrize a twist-angle dependent Keldysh model for the resulting effective interaction.
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Submitted 22 November, 2019; v1 submitted 2 September, 2019;
originally announced September 2019.
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Automated high-throughput Wannierisation
Authors:
Valerio Vitale,
Giovanni Pizzi,
Antimo Marrazzo,
Jonathan R. Yates,
Nicola Marzari,
Arash A. Mostofi
Abstract:
Maximally-localised Wannier functions (MLWFs) are routinely used to compute from first-principles advanced materials properties that require very dense Brillouin zone integration and to build accurate tight-binding models for scale-bridging simulations. At the same time, high-throughput (HT) computational materials design is an emergent field that promises to accelerate the reliable and cost-effec…
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Maximally-localised Wannier functions (MLWFs) are routinely used to compute from first-principles advanced materials properties that require very dense Brillouin zone integration and to build accurate tight-binding models for scale-bridging simulations. At the same time, high-throughput (HT) computational materials design is an emergent field that promises to accelerate the reliable and cost-effective design and optimisation of new materials with target properties. The use of MLWFs in HT workflows has been hampered by the fact that generating MLWFs automatically and robustly without any user intervention and for arbitrary materials is, in general, very challenging. We address this problem directly by proposing a procedure for automatically generating MLWFs for HT frameworks. Our approach is based on the selected columns of the density matrix method (SCDM) and we present the details of its implementation in an AiiDA workflow. We apply our approach to a dataset of 200 bulk crystalline materials that span a wide structural and chemical space. We assess the quality of our MLWFs in terms of the accuracy of the band-structure interpolation that they provide as compared to the band-structure obtained via full first-principles calculations. Finally, we provide a downloadable virtual machine that can be used to reproduce the results of this paper, including all first-principles and atomistic simulations as well as the computational workflows.
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Submitted 1 July, 2020; v1 submitted 1 September, 2019;
originally announced September 2019.
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Wannier90 as a community code: new features and applications
Authors:
Giovanni Pizzi,
Valerio Vitale,
Ryotaro Arita,
Stefan Blügel,
Frank Freimuth,
Guillaume Géranton,
Marco Gibertini,
Dominik Gresch,
Charles Johnson,
Takashi Koretsune,
Julen Ibañez-Azpiroz,
Hyungjun Lee,
Jae-Mo Lihm,
Daniel Marchand,
Antimo Marrazzo,
Yuriy Mokrousov,
Jamal I. Mustafa,
Yoshiro Nohara,
Yusuke Nomura,
Lorenzo Paulatto,
Samuel Poncé,
Thomas Ponweiser,
Junfeng Qiao,
Florian Thöle,
Stepan S. Tsirkin
, et al. (6 additional authors not shown)
Abstract:
Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a n…
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Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, selected columns of the density matrix) and the ability to calculate new properties (shift currents and Berry-curvature dipole, and a new interface to many-body perturbation theory); performance improvements, including parallelisation of the core code; enhancements in functionality (support for spinor-valued Wannier functions, more accurate methods to interpolate quantities in the Brillouin zone); improved usability (improved plotting routines, integration with high-throughput automation frameworks), as well as the implementation of modern software engineering practices (unit testing, continuous integration, and automatic source-code documentation). These new features, capabilities, and code development model aim to further sustain and expand the community uptake and range of applicability, that nowadays spans complex and accurate dielectric, electronic, magnetic, optical, topological and transport properties of materials.
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Submitted 23 July, 2019;
originally announced July 2019.
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Twist-angle dependence of electron correlations in moiré graphene bilayers
Authors:
Zachary A. H. Goodwin,
Fabiano Corsetti,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Motivated by the recent observation of correlated insulator states and unconventional superconductivity in twisted bilayer graphene, we study the dependence of electron correlations on the twist angle and reveal the existence of strong correlations over a narrow range of twist-angles near the magic angle. Specifically, we determine the on-site and extended Hubbard parameters of the low-energy Wann…
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Motivated by the recent observation of correlated insulator states and unconventional superconductivity in twisted bilayer graphene, we study the dependence of electron correlations on the twist angle and reveal the existence of strong correlations over a narrow range of twist-angles near the magic angle. Specifically, we determine the on-site and extended Hubbard parameters of the low-energy Wannier states using an atomistic quantum-mechanical approach. The ratio of the on-site Hubbard parameter and the width of the flat bands, which is an indicator of the strength of electron correlations, depends sensitively on the screening by the semiconducting substrate and the metallic gates. Including the effect of long-ranged Coulomb interactions significantly reduces electron correlations and explains the experimentally observed sensitivity of strong correlation phenomena on twist angle.
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Submitted 2 September, 2019; v1 submitted 6 May, 2019;
originally announced May 2019.
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Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices
Authors:
Dillon Wong,
Yang Wang,
Wuwei Jin,
Hsin-Zon Tsai,
Aaron Bostwick,
Eli Rotenberg,
Roland K. Kawakami,
Alex Zettl,
Arash A. Mostofi,
Johannes Lischner,
Michael F. Crommie
Abstract:
We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experim…
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We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.
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Submitted 24 October, 2018;
originally announced October 2018.
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A Corkscrew Model for Highly Coupled Anisotropic Compliance in Ruddlesden-Popper Oxides with Frozen Octahedral Rotations
Authors:
Chris Ablitt,
Mark S. Senn,
Nicholas C. Bristowe,
Arash A. Mostofi
Abstract:
A "corkscrew" mechanism, that couples changes in the in-plane rotation angle to strains along the layering axis, has been proposed previously to explain increased compliance in certain Ruddlesden-Popper phases that facilitates uniaxial negative thermal expansion over a wide temperature range. Following the procedure developed to study many simple, auxetic geometries, in the present study we derive…
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A "corkscrew" mechanism, that couples changes in the in-plane rotation angle to strains along the layering axis, has been proposed previously to explain increased compliance in certain Ruddlesden-Popper phases that facilitates uniaxial negative thermal expansion over a wide temperature range. Following the procedure developed to study many simple, auxetic geometries, in the present study we derive the elastic compliances predicted by this corkscrew mechanism assuming that the four shortest metal-anion bonds remain stiff and changes in bond angle are modelled by a harmonic angle potential. We subsequently analyse the limitations of this model and show that it may be extended to An+1BnO3n+1 Ruddlesden-Popper oxide phases of general layer thickness n.
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Submitted 5 October, 2018;
originally announced October 2018.
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Bound States of Charged Adatoms on MoS2: Screening and Multivalley Effects
Authors:
Martik Aghajanian,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Adsorbate engineering is a promising route for controlling the electronic properties of monolayer transition-metal dichalcogenide materials. Here, we study shallow bound states induced by charged adatoms on MoS$_2$ using large-scale tight-binding simulations with screened adatom potentials obtained from ab initio calculations. The interplay of unconventional screening in two-dimensional systems an…
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Adsorbate engineering is a promising route for controlling the electronic properties of monolayer transition-metal dichalcogenide materials. Here, we study shallow bound states induced by charged adatoms on MoS$_2$ using large-scale tight-binding simulations with screened adatom potentials obtained from ab initio calculations. The interplay of unconventional screening in two-dimensional systems and multivalley effects in the transition-metal dichalcogenide (TMDC) band structure results in a rich diversity of bound impurity states. We present results for impurity state wavefunctions and energies, as well as for the local density of states in the vicinity of the adatom which can be measured using scanning tunnelling spectroscopy. We find that the presence of several distinct valleys in the MoS$_2$ band structure gives rise to crossovers of impurity states at critical charge strengths, altering the orbital character of the most strongly bound state. We compare our results to simpler methods, such as the 2D hydrogen atom and effective mass theory, and we discuss limitations of these approaches.
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Submitted 6 May, 2018;
originally announced May 2018.
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Spatially resolving density-dependent screening around a single charged atom in graphene
Authors:
Dillon Wong,
Fabiano Corsetti,
Yang Wang,
Victor W. Brar,
Hsin-Zon Tsai,
Qiong Wu,
Roland K. Kawakami,
Alex Zettl,
Arash A. Mostofi,
Johannes Lischner,
Michael F. Crommie
Abstract:
Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated gr…
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Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated graphene device configuration has allowed us to directly visualize how the screening length for this system can be tuned with carrier density. Our results provide insight into electron-impurity and electron-electron interactions in a relativistic setting with important consequences for other graphene-based electronic devices.
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Submitted 17 May, 2017;
originally announced May 2017.
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First-principles multiscale modelling of charged adsorbates on doped graphene
Authors:
Fabiano Corsetti,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Adsorbed atoms and molecules play an important role in controlling and tuning the functional properties of two-dimensional (2D) materials. Understanding and predicting this process from theory is challenging because of the need to capture the complex interplay between the local chemistry and the long-range screening response. To address this problem, we present a first-principles multiscale approa…
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Adsorbed atoms and molecules play an important role in controlling and tuning the functional properties of two-dimensional (2D) materials. Understanding and predicting this process from theory is challenging because of the need to capture the complex interplay between the local chemistry and the long-range screening response. To address this problem, we present a first-principles multiscale approach that combines linear-scaling density-functional theory, continuum screening theory and large-scale tight-binding simulations into a seamless parameter-free theory of adsorbates on 2D materials. We apply this method to investigate the electronic structure of doped graphene with a single calcium (Ca) adatom and find that the Ca atom acts as a Coulomb impurity which modifies the graphene local density of states (LDOS) within a distance of several nanometres in its vicinity. We also observe an important doping dependence of the graphene LDOS near the Ca atom, which gives insights into electronic screening in graphene. Our multiscale framework opens up the possibility of investigating complex mesoscale adsorbate configurations on 2D materials relevant to real devices.
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Submitted 27 March, 2017; v1 submitted 14 September, 2016;
originally announced September 2016.
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Negative-U properties for substitutional Au in Si
Authors:
Fabiano Corsetti,
Arash A. Mostofi
Abstract:
The isolated substitutional gold impurity in bulk silicon is studied in detail using electronic structure calculations based on density-functional theory. The defect system is found to be a non-spin-polarized negative-U centre, thus providing a simple solution to the long-standing debate over the electron paramagnetic resonance signal for gold in silicon. There is an excellent agreement (within 0.…
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The isolated substitutional gold impurity in bulk silicon is studied in detail using electronic structure calculations based on density-functional theory. The defect system is found to be a non-spin-polarized negative-U centre, thus providing a simple solution to the long-standing debate over the electron paramagnetic resonance signal for gold in silicon. There is an excellent agreement (within 0.03 eV) between the well-established experimental donor and acceptor levels and the predicted stable charge state transition levels, allowing for the unambiguous assignment of the two experimental levels to the (1+/1-) and (1-/3-) transitions, respectively, in contrast to previously held assumptions about the system.
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Submitted 25 March, 2014;
originally announced March 2014.
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Improving the conductance of carbon nanotube networks through resonant momentum exchange
Authors:
Robert A. Bell,
Michael C. Payne,
Arash A. Mostofi
Abstract:
We present a mechanism to improve the conductivity of carbon nanotube (CNT) networks by improving the conductance between CNTs of different chirality. We argue generally that a weak perturbation can greatly improve the inter-tube conductance by allowing momentum-conserving tunnelling. The mechanism is verified with a tight-binding model, allowing an investigation of its impact for a network contai…
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We present a mechanism to improve the conductivity of carbon nanotube (CNT) networks by improving the conductance between CNTs of different chirality. We argue generally that a weak perturbation can greatly improve the inter-tube conductance by allowing momentum-conserving tunnelling. The mechanism is verified with a tight-binding model, allowing an investigation of its impact for a network containing a range of chiralities. We discuss practical implementations, and conclude that it may be effected by weak physical interactions, and therefore does not require chemical bonding to the CNTs.
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Submitted 20 February, 2014;
originally announced February 2014.
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A first principles study of As doping at a disordered Si--SiO$_2$ interface
Authors:
Fabiano Corsetti,
Arash A. Mostofi
Abstract:
Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles density-functional theory and a continuous random network Monte Carlo method, we investigate electrically active arsenic donors at the interface between silicon and its oxid…
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Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles density-functional theory and a continuous random network Monte Carlo method, we investigate electrically active arsenic donors at the interface between silicon and its oxide. Using a realistic model of the disordered interface, we find that a small percentage (on the order of ~10%) of the atomic sites in the first few monolayers on the silicon side of the interface are energetically favourable for segregation, and that this is controlled by the local bonding and local strain of the defect centre. We also find that there is a long-range quantum confinement effect due to the interface, which results in an energy barrier for dopant segregation, but that this barrier is small in comparison to the effect of the local environment. Finally, we consider the extent to which the energetics of segregation can be controlled by the application of strain to the interface.
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Submitted 11 November, 2013;
originally announced November 2013.
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Calculating dispersion interactions using maximally-localized Wannier functions
Authors:
Lampros Andrinopoulos,
Nicholas D. M. Hine,
Arash A. Mostofi
Abstract:
We investigate a recently developed approach [P. L. Silvestrelli, Phys. Rev. Lett. 100, 053002 (2008); J. Phys. Chem. A 113, 5224 (2009)] that uses maximally localized Wannier functions to evaluate the van der Waals contribution to the total energy of a system calculated with density-functional theory. We test it on a set of atomic and molecular dimers of increasing complexity (argon, methane, eth…
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We investigate a recently developed approach [P. L. Silvestrelli, Phys. Rev. Lett. 100, 053002 (2008); J. Phys. Chem. A 113, 5224 (2009)] that uses maximally localized Wannier functions to evaluate the van der Waals contribution to the total energy of a system calculated with density-functional theory. We test it on a set of atomic and molecular dimers of increasing complexity (argon, methane, ethene, benzene, phthalocyanine, and copper phthalocyanine) and demonstrate that the method, as originally proposed, has a number of shortcomings that hamper its predictive power. In order to overcome these problems, we have developed and implemented a number of improvements to the method and show that these modifications give rise to calculated binding energies and equilibrium geometries that are in closer agreement to results of quantum-chemical coupled-cluster calculations.
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Submitted 11 June, 2012;
originally announced June 2012.
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Generalized Wannier functions: a comparison of molecular electric dipole polarizabilities
Authors:
David D. O'Regan,
Mike C. Payne,
Arash A. Mostofi
Abstract:
Localized Wannier functions provide an efficient and intuitive means by which to compute dielectric properties from first principles. They are most commonly constructed in a post-processing step, following total-energy minimization. Nonorthogonal generalized Wannier functions (NGWFs) [Skylaris et al., Phys. Rev. B 66, 035119 11 (2002); Skylaris et al., J. Chem. Phys. 122, 084119 (2005)] may also b…
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Localized Wannier functions provide an efficient and intuitive means by which to compute dielectric properties from first principles. They are most commonly constructed in a post-processing step, following total-energy minimization. Nonorthogonal generalized Wannier functions (NGWFs) [Skylaris et al., Phys. Rev. B 66, 035119 11 (2002); Skylaris et al., J. Chem. Phys. 122, 084119 (2005)] may also be optimized in situ, in the process of solving for the ground-state density. We explore the relationship between NGWFs and orthonormal, maximally localized Wannier functions (MLWFs) [Marzari and Vanderbilt, Phys. Rev. B 56, 12847 (1997); Souza, Marzari, and Vanderbilt, ibid. 65, 035109 (2001)], demonstrating that NGWFs may be used to compute electric dipole polarizabilities efficiently, with no necessity for post-processing optimization, and with an accuracy comparable to MLWFs.
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Submitted 11 May, 2012; v1 submitted 20 March, 2012;
originally announced March 2012.
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Maximally localized Wannier functions: Theory and applications
Authors:
Nicola Marzari,
Arash A. Mostofi,
Jonathan R. Yates,
Ivo Souza,
David Vanderbilt
Abstract:
The electronic ground state of a periodic system is usually described in terms of extended Bloch orbitals, but an alternative representation in terms of localized "Wannier functions" was introduced by Gregory Wannier in 1937. The connection between the Bloch and Wannier representations is realized by families of transformations in a continuous space of unitary matrices, carrying a large degree of…
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The electronic ground state of a periodic system is usually described in terms of extended Bloch orbitals, but an alternative representation in terms of localized "Wannier functions" was introduced by Gregory Wannier in 1937. The connection between the Bloch and Wannier representations is realized by families of transformations in a continuous space of unitary matrices, carrying a large degree of arbitrariness. Since 1997, methods have been developed that allow one to iteratively transform the extended Bloch orbitals of a first-principles calculation into a unique set of maximally localized Wannier functions, accomplishing the solid-state equivalent of constructing localized molecular orbitals, or "Boys orbitals" as previously known from the chemistry literature. These developments are reviewed here, and a survey of the applications of these methods is presented. This latter includes a description of their use in analyzing the nature of chemical bonding, or as a local probe of phenomena related to electric polarization and orbital magnetization. Wannier interpolation schemes are also reviewed, by which quantities computed on a coarse reciprocal-space mesh can be used to interpolate onto much finer meshes at low cost, and applications in which Wannier functions are used as efficient basis functions are discussed. Finally the construction and use of Wannier functions outside the context of electronic-structure theory is presented, for cases that include phonon excitations, photonic crystals, and cold-atom optical lattices.
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Submitted 12 May, 2012; v1 submitted 22 December, 2011;
originally announced December 2011.
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Minimal parameter implicit solvent model for ab initio electronic structure calculations
Authors:
Jacek Dziedzic,
Hatem H. Helal,
Chris-Kriton Skylaris,
Arash A. Mostofi,
Mike C. Payne
Abstract:
We present an implicit solvent model for ab initio electronic structure calculations which is fully self-consistent and is based on direct solution of the nonhomogeneous Poisson equation. The solute cavity is naturally defined in terms of an isosurface of the electronic density according to the formula of Fattebert and Gygi (J. Comp. Chem. 23, 6 (2002)). While this model depends on only two parame…
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We present an implicit solvent model for ab initio electronic structure calculations which is fully self-consistent and is based on direct solution of the nonhomogeneous Poisson equation. The solute cavity is naturally defined in terms of an isosurface of the electronic density according to the formula of Fattebert and Gygi (J. Comp. Chem. 23, 6 (2002)). While this model depends on only two parameters, we demonstrate that by using appropriate boundary conditions and dispersion-repulsion contributions, solvation energies obtained for an extensive test set including neutral and charged molecules show dramatic improvement compared to existing models. Our approach is implemented in, but not restricted to, a linear-scaling density functional theory (DFT) framework, opening the path for self-consistent implicit solvent DFT calculations on systems of unprecedented size, which we demonstrate with calculations on a 2615-atom protein-ligand complex.
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Submitted 6 December, 2011;
originally announced December 2011.
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Linear-scaling DFT+U with full local orbital optimization
Authors:
David D. O'Regan,
Nicholas D. M. Hine,
Mike C. Payne,
Arash A. Mostofi
Abstract:
We present an approach to the DFT+U method (Density Functional Theory + Hubbard model) within which the computational effort for calculation of ground state energies and forces scales linearly with system size. We employ a formulation of the Hubbard model using nonorthogonal projector functions to define the localized subspaces, and apply it to a local-orbital DFT method including in situ orbital…
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We present an approach to the DFT+U method (Density Functional Theory + Hubbard model) within which the computational effort for calculation of ground state energies and forces scales linearly with system size. We employ a formulation of the Hubbard model using nonorthogonal projector functions to define the localized subspaces, and apply it to a local-orbital DFT method including in situ orbital optimization. The resulting approach thus combines linear-scaling and systematic variational convergence. We demonstrate the scaling of the method by applying it to nickel oxide nano-clusters with sizes exceeding 7,000 atoms.
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Submitted 13 February, 2012; v1 submitted 25 November, 2011;
originally announced November 2011.
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Prediction of high zT in thermoelectric silicon nanowires with axial germanium heterostructures
Authors:
Matthew Shelley,
Arash A. Mostofi
Abstract:
We calculate the thermoelectric figure of merit, zT=S^2GT/(κ_l+κ_e), for p-type Si nanowires with axial Ge heterostructures using a combination of first-principles density-functional theory, interatomic potentials, and Landauer-Buttiker transport theory. We consider nanowires with up to 8400 atoms and twelve Ge axial heterostructures along their length. We find that introducing heterostructures al…
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We calculate the thermoelectric figure of merit, zT=S^2GT/(κ_l+κ_e), for p-type Si nanowires with axial Ge heterostructures using a combination of first-principles density-functional theory, interatomic potentials, and Landauer-Buttiker transport theory. We consider nanowires with up to 8400 atoms and twelve Ge axial heterostructures along their length. We find that introducing heterostructures always reduces S^2G, and that our calculated increases in zT are predominantly driven by associated decreases in κ_l. Of the systems considered, <111> nanowires with a regular distribution of Ge heterostructures have the highest figure-of-merit: zT=3, an order of magnitude larger than the equivalent pristine nanowire. Even in the presence of realistic structural disorder, in the form of small variations in length of the heterostructures, zT remains several times larger than that of the pristine case, suggesting that axial heterostructuring is a promising route to high-zT thermoelectric nanowires.
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Submitted 6 May, 2011;
originally announced May 2011.
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Accurate ionic forces and geometry optimisation in linear scaling density-functional theory with local orbitals
Authors:
N. D. M. Hine,
M. Robinson,
P. D. Haynes,
C. -K. Skylaris,
M. C. Payne,
A. A. Mostofi
Abstract:
Linear scaling methods for density-functional theory (DFT) simulations are formulated in terms of localised orbitals in real-space, rather than the delocalised eigenstates of conventional approaches. In local-orbital methods, relative to conventional DFT, desirable properties can be lost to some extent, such as the translational invariance of the total energy of a system with respect to small disp…
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Linear scaling methods for density-functional theory (DFT) simulations are formulated in terms of localised orbitals in real-space, rather than the delocalised eigenstates of conventional approaches. In local-orbital methods, relative to conventional DFT, desirable properties can be lost to some extent, such as the translational invariance of the total energy of a system with respect to small displacements and the smoothness of the potential energy surface. This has repercussions for calculating accurate ionic forces and geometries. In this work we present results from \textsc{onetep}, our linear scaling method based on localised orbitals in real-space. The use of psinc functions for the underlying basis set and on-the-fly optimisation of the localised orbitals results in smooth potential energy surfaces that are consistent with ionic forces calculated using the Hellmann-Feynman theorem. This enables accurate geometry optimisation to be performed. Results for surface reconstructions in silicon are presented, along with three example systems demonstrating the performance of a quasi-Newton geometry optimisation algorithm: an organic zwitterion, a point defect in an ionic crystal, and a semiconductor nanostructure.
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Submitted 30 March, 2011;
originally announced March 2011.
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Subspace representations in ab initio methods for strongly correlated systems
Authors:
David D. O'Regan,
Mike C. Payne,
Arash A. Mostofi
Abstract:
We present a generalized definition of subspace occupancy matrices in ab initio methods for strongly correlated materials, such as DFT+U and DFT+DMFT, which is appropriate to the case of nonorthogonal projector functions. By enforcing the tensorial consistency of all matrix operations, we are led to a subspace projection operator for which the occupancy matrix is tensorial and accumulates only con…
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We present a generalized definition of subspace occupancy matrices in ab initio methods for strongly correlated materials, such as DFT+U and DFT+DMFT, which is appropriate to the case of nonorthogonal projector functions. By enforcing the tensorial consistency of all matrix operations, we are led to a subspace projection operator for which the occupancy matrix is tensorial and accumulates only contributions which are local to the correlated subspace at hand. For DFT+U in particular, the resulting contributions to the potential and ionic forces are automatically Hermitian, without resort to symmetrization, and localized to their corresponding correlated subspace. The tensorial invariance of the occupancies, energies and ionic forces is preserved. We illustrate the effect of this formalism in a DFT+U study using self-consistently determined projectors.
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Submitted 26 April, 2011; v1 submitted 9 February, 2011;
originally announced February 2011.
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Automated quantum conductance calculations using maximally-localised Wannier functions
Authors:
Matthew Shelley,
Nicolas Poilvert,
Arash A Mostofi,
Nicola Marzari
Abstract:
A robust, user-friendly, and automated method to determine quantum conductance in disordered quasi-one-dimensional systems is presented. The scheme relies upon an initial density- functional theory calculation in a specific geometry after which the ground-state eigenfunctions are transformed to a maximally-localised Wannier function (MLWF) basis. In this basis, our novel algorithms manipulate and…
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A robust, user-friendly, and automated method to determine quantum conductance in disordered quasi-one-dimensional systems is presented. The scheme relies upon an initial density- functional theory calculation in a specific geometry after which the ground-state eigenfunctions are transformed to a maximally-localised Wannier function (MLWF) basis. In this basis, our novel algorithms manipulate and partition the Hamiltonian for the calculation of coherent electronic transport properties within the Landauer-Buttiker formalism. Furthermore, we describe how short- ranged Hamiltonians in the MLWF basis can be combined to build model Hamiltonians of large (>10,000 atom) disordered systems without loss of accuracy. These automated algorithms have been implemented in the Wannier90 code[Mostofi et al, Comput. Phys. Commun. 178, 685 (2008)], which is interfaced to a number of electronic structure codes such as Quantum-ESPRESSO, AbInit, Wien2k, SIESTA and FLEUR. We apply our methods to an Al atomic chain with a Na defect, an axially heterostructured Si/Ge nanowire and to a spin-polarised defect on a zigzag graphene nanoribbon.
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Submitted 19 January, 2011;
originally announced January 2011.
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System-size convergence of point defect properties: The case of the silicon vacancy
Authors:
Fabiano Corsetti,
Arash A. Mostofi
Abstract:
We present a comprehensive study of the vacancy in bulk silicon in all its charge states from 2+ to 2-, using a supercell approach within plane-wave density-functional theory, and systematically quantify the various contributions to the well-known finite size errors associated with calculating formation energies and stable charge state transition levels of isolated defects with periodic boundary c…
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We present a comprehensive study of the vacancy in bulk silicon in all its charge states from 2+ to 2-, using a supercell approach within plane-wave density-functional theory, and systematically quantify the various contributions to the well-known finite size errors associated with calculating formation energies and stable charge state transition levels of isolated defects with periodic boundary conditions. Furthermore, we find that transition levels converge faster with respect to supercell size when only the Gamma-point is sampled in the Brillouin zone, as opposed to a dense k-point sampling. This arises from the fact that defect level at the Gamma-point quickly converges to a fixed value which correctly describes the bonding at the defect centre. Our calculated transition levels with 1000-atom supercells and Gamma-point only sampling are in good agreement with available experimental results. We also demonstrate two simple and accurate approaches for calculating the valence band offsets that are required for computing formation energies of charged defects, one based on a potential averaging scheme and the other using maximally-localized Wannier functions (MLWFs). Finally, we show that MLWFs provide a clear description of the nature of the electronic bonding at the defect centre that verifies the canonical Watkins model.
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Submitted 7 December, 2011; v1 submitted 19 October, 2010;
originally announced October 2010.
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Projector self-consistent DFT+U using non-orthogonal generalized Wannier functions
Authors:
David D. O'Regan,
Nicholas D. M. Hine,
Mike C. Payne,
Arash A. Mostofi
Abstract:
We present a formulation of the density-functional theory + Hubbard model (DFT+U) method that is self-consistent over the choice of Hubbard projectors used to define the correlated subspaces. In order to overcome the arbitrariness in this choice, we propose the use of non-orthogonal generalized Wannier functions (NGWFs) as projectors for the DFT+U correction. We iteratively refine these NGWF proje…
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We present a formulation of the density-functional theory + Hubbard model (DFT+U) method that is self-consistent over the choice of Hubbard projectors used to define the correlated subspaces. In order to overcome the arbitrariness in this choice, we propose the use of non-orthogonal generalized Wannier functions (NGWFs) as projectors for the DFT+U correction. We iteratively refine these NGWF projectors and, hence, the DFT+U functional, such that the correlated subspaces are fully self-consistent with the DFT+U ground-state. We discuss the convergence characteristics of this algorithm and compare ground-state properties thus computed with those calculated using hydrogenic projectors. Our approach is implemented within, but not restricted to, a linear-scaling DFT framework, opening the path to DFT+U calculations on systems of unprecedented size.
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Submitted 27 July, 2010; v1 submitted 27 April, 2010;
originally announced April 2010.