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Charge-Density-Wave Devices Printed with the Ink of Chemically Exfoliated 1T-TaS$_2$ Fillers
Authors:
Saba Baraghani,
Zahra Barani,
Yassamin Ghafouri,
Amirmahdi Mohammadzadeh,
Sriharsha Sudhindra,
Tina T. Salguero,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS$_2$ crystals to produce fillers with nm-scale thickness and um-scale lateral dimensions. Ex…
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We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS$_2$ crystals to produce fillers with nm-scale thickness and um-scale lateral dimensions. Exfoliated 1T-TaS$_2$ was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of their thermo-physical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS$_2$ are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly-commensurate to commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS$_2$ fillers rather than by electron-hopping transport between them. These results provide pathways for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials.
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Submitted 15 January, 2022;
originally announced January 2022.
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Charge Transport in Electronic Devices Printed with Inks of Quasi-1D van der Waals Materials
Authors:
Saba Baraghani,
Jehad Abourahma,
Zahra Barani,
Amirmahdi Mohammadzadeh,
Sriharsha Sudhindra,
Alexey Lipatov,
Alexander Sinitskii,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report on fabrication and characterization of electronic devices printed with inks of quasi-1D van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allows for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3 semiconductor into quasi-1D nanoribbons di…
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We report on fabrication and characterization of electronic devices printed with inks of quasi-1D van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allows for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3 semiconductor into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature dependent electrical measurements indicate that electron transport in the printed devices is dominated by the electron hopping mechanisms. The low-frequency electronic noise in the printed devices is of 1/f type near room temperature (f is the frequency). The abrupt changes in the temperature dependence of the noise spectral density and the spectrum itself can be indicative of the phase transition in individual TiS3 nanoribbons as well as modifications in the hopping transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.
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Submitted 8 July, 2021;
originally announced July 2021.
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Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
Authors:
A. Mohammadzadeh,
A. Rehman,
F. Kargar,
S. Rumyantsev,
J. M. Smulko,
W. Knap,
R. K. Lake,
A. A. Balandin
Abstract:
We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in elec…
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We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics.
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Submitted 28 April, 2021;
originally announced April 2021.
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Low-Frequency Electronic Noise Spectroscopy of Quasi-2D van der Waals Antiferromagnetic Semiconductors
Authors:
Subhajit Ghosh,
Fariborz Kargar,
Amirmahdi Mohammadzadeh,
Sergey Rumyantsev,
Alexander A. Balandin
Abstract:
We investigated low-frequency current fluctuations, i.e. noise, in the quasi-two-dimensional (2D) van der Waals antiferromagnetic semiconductor FePS3 with the electronic bandgap of 1.5 eV. The electrical and noise characteristics of the p-type, highly resistive, thin films of FePS3 were measured at different temperatures. The noise spectral density was of the 1/f - type over most of the examined t…
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We investigated low-frequency current fluctuations, i.e. noise, in the quasi-two-dimensional (2D) van der Waals antiferromagnetic semiconductor FePS3 with the electronic bandgap of 1.5 eV. The electrical and noise characteristics of the p-type, highly resistive, thin films of FePS3 were measured at different temperatures. The noise spectral density was of the 1/f - type over most of the examined temperature range but revealed well-defined Lorentzian bulges, and increased strongly near the Neel temperature of 118 K (f is the frequency). Intriguingly, the noise spectral density attained its minimum at temperature T~200 K, which was attributed to an interplay of two opposite trends in noise scaling - one for semiconductors and another for materials with the phase transitions. The Lorentzian corner frequencies revealed unusual dependence on temperature and bias voltage, suggesting that their origin is different from the generation - recombination noise in conventional semiconductors. The obtained results are important for proposed applications of antiferromagnetic semiconductors in spintronic devices. They also attest to the power of the noise spectroscopy for monitoring various phase transitions.
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Submitted 13 April, 2021;
originally announced April 2021.
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Green Supply Chain Network Design with Emphasis on Inventory Decisions
Authors:
Meysam Mahjoob,
Seyed Sajjad Fazeli,
Soodabeh Milanlouei,
Ali Kamali Mohammadzadeh,
Leyla Sadat Tavassoli
Abstract:
Excessive greenhouse gas emissions from the transportation sector have led companies to move towards a sustainable supply chain network design. In this study we present a new bi-objective non-linear formulation where multiple inventory components are integrated into the location and routing decisions throughout the supply chain network. To efficiently solve the proposed model, we implement an exac…
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Excessive greenhouse gas emissions from the transportation sector have led companies to move towards a sustainable supply chain network design. In this study we present a new bi-objective non-linear formulation where multiple inventory components are integrated into the location and routing decisions throughout the supply chain network. To efficiently solve the proposed model, we implement an exact method and four evolutionary algorithms for small and large-scale instances. Extensive computational results and sensitivity analysis are performed to validate the efficiency of the proposed approaches, both quantitatively and qualitatively. Besides, we run a statistical analysis to investigate whether there is any statistically significant difference between solution methods.
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Submitted 12 April, 2021;
originally announced April 2021.
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Electromagnetic-Polarization Selective Composites with Quasi-1D van der Waals Metallic Fillers
Authors:
Zahra Barani,
Fariborz Kargar,
Yassamin Ghafouri,
Saba Baraghani,
Sriharsha Sudhindra,
Amirmahdi Mohammadzadeh,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We report on the preparation of flexible polymer composite films with aligned metallic fillers comprised of atomic chain bundles of the quasi-one-dimensional (1D) van der Waals material tantalum triselenide, TaSe3. The material functionality, embedded at the nanoscale level, is achieved by mimicking the design of an electromagnetic aperture grid antenna. The processed composites employ chemically…
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We report on the preparation of flexible polymer composite films with aligned metallic fillers comprised of atomic chain bundles of the quasi-one-dimensional (1D) van der Waals material tantalum triselenide, TaSe3. The material functionality, embedded at the nanoscale level, is achieved by mimicking the design of an electromagnetic aperture grid antenna. The processed composites employ chemically exfoliated TaSe3 nanowires as the grid building blocks incorporated within the thin film. Filler alignment is achieved using the "blade coating" method. Measurements conducted in the X-band frequency range demonstrate that the electromagnetic transmission through such films can be varied significantly by changing the relative orientations of the quasi-1D fillers and the polarization of the electromagnetic wave. We argue that such polarization-sensitive polymer films with quasi-1D fillers are applicable to advanced electromagnetic interference shielding in future communication systems.
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Submitted 9 February, 2021;
originally announced February 2021.
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Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed
Authors:
Amirmahdi Mohammadzadeh,
Saba Baraghani,
Shenchu Yin,
Fariborz Kargar,
Jonathan P. Bird,
Alexander A. Balandin
Abstract:
We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon the nearly-commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equi…
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We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon the nearly-commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equilibrium. For sufficiently short pulses, with rise times in the nanosecond range, self-heating of the devices is suppressed, and their current-voltage characteristics are weakly non-linear and free of hysteresis. This changes as the pulse duration is increased to 200 ns, where the current develops pronounced hysteresis that evolves non-monotonically with the pulse duration. By combining the results of our experiments with a numerical analysis of transient heat diffusion in these devices, we clearly reveal the thermal origins of their switching. In spite of this thermal character, our modeling suggests that suitable reduction of the size of these devices should allow their operation at GHz frequencies.
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Submitted 17 January, 2021;
originally announced January 2021.
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Simultaneous Estimation of State and Packet-Loss Occurrences in Networked Control Systems
Authors:
A. Mohammadzadeh,
B. Tavassoli,
B. Moaveni
Abstract:
Estimating the occurrence of packet losses in a networked control systems (NCS) can be used to improve the control performance and to detect failures or cyber-attacks. This study considers simultaneous estimation of the plant state and the packet loss occurrences at each time step. After formulation of the problem, two solutions are proposed. In the first one, an input-output representation of the…
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Estimating the occurrence of packet losses in a networked control systems (NCS) can be used to improve the control performance and to detect failures or cyber-attacks. This study considers simultaneous estimation of the plant state and the packet loss occurrences at each time step. After formulation of the problem, two solutions are proposed. In the first one, an input-output representation of the NCS model is used to design a recursive filter for estimation of the packet loss occurrences. This estimation is then used for state estimation through Kalman filtering. In the second solution, a state space model of NCS is used to design an estimator for both the plant state and the packet loss occurrences which employs a Kalman filter. The effectiveness of the solutions is shown during an example and comparisons are made between the proposed solutions and another solution based on the interacting multiple model estimation method.
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Submitted 30 July, 2020;
originally announced July 2020.
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High-Temperature Electromagnetic and Thermal Characteristics of Graphene Composites
Authors:
Zahra Barani,
Fariborz Kargar,
Amirmahdi Mohammadzadeh,
Sahar Naghibi,
Carissa Lo,
Brandon Rivera,
Alexander A. Balandin
Abstract:
We describe a method for scalable synthesis of epoxy composites with graphene and few-layer graphene fillers, and report on the electromagnetic interference (EMI) shielding and thermal properties of such composites at elevated temperatures. The tested materials reveal excellent total EMI shielding of ~65 dB (~105 dB) at a thickness of 1 mm(~2 mm) in the X-band frequency range of f=8.2 GHz - 12.4 G…
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We describe a method for scalable synthesis of epoxy composites with graphene and few-layer graphene fillers, and report on the electromagnetic interference (EMI) shielding and thermal properties of such composites at elevated temperatures. The tested materials reveal excellent total EMI shielding of ~65 dB (~105 dB) at a thickness of 1 mm(~2 mm) in the X-band frequency range of f=8.2 GHz - 12.4 GHz. The room-temperature cross-plane thermal conductivity of the composite with ~19.5 vol.% of fillers was determined to be ~11.2 W/mK, which is a factor of x41 larger than that of the pristine epoxy. Interestingly, the EMI shielding efficiency improves further as the temperature increases to 520 K while the thermal conductivity remains approximately constant. The excellent EMI shielding and heat conduction characteristics of such multifunctional graphene composites at elevated temperatures are promising for packaging applications of microwave components where EMI shielding and thermal management are important design considerations.
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Submitted 25 April, 2020;
originally announced April 2020.
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Synthesis and Properties of Non-Curing Graphene Thermal Interface Materials
Authors:
Sahar Naghibi,
Fariborz Kargar,
Dylan Wright,
Chun Yu Tammy Huang,
Amirmahdi Mohammadzadeh,
Zahra Barani,
Ruben Salgado,
Alexander Balandin
Abstract:
Development of the next generation thermal interface materials with high thermal conductivity is important for thermal management and packaging of electronic devices. We report on the synthesis and thermal conductivity measurements of non-curing thermal paste, i.e. grease, based on mineral oil with the mixture of graphene and few-layer graphene flakes as the fillers. It was found that graphene the…
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Development of the next generation thermal interface materials with high thermal conductivity is important for thermal management and packaging of electronic devices. We report on the synthesis and thermal conductivity measurements of non-curing thermal paste, i.e. grease, based on mineral oil with the mixture of graphene and few-layer graphene flakes as the fillers. It was found that graphene thermal paste exhibits a distinctive thermal percolation threshold with the thermal conductivity revealing a sublinear dependence on the filler loading. This behavior contrasts with the thermal conductivity of curing graphene thermal interface materials, based on epoxy, where super-linear dependence on the filler loading is observed. The performance of graphene thermal paste was benchmarked against top-of-the-line commercial thermal pastes. The obtained results show that non-curing graphene thermal interface materials outperforms the best commercial pastes in terms of thermal conductivity, at substantially lower filler concentration of ~ 27 vol%. The obtained results shed light on thermal percolation mechanism in non-curing polymeric matrices laden with quasi-two-dimensional fillers. Considering recent progress in graphene production via liquid phase exfoliation and oxide reduction, we argue that our results open a pathway for large-scale industrial application of graphene in thermal management of electronics.
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Submitted 23 November, 2019;
originally announced November 2019.
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Thermal Properties of the Binary-Filler Composites with Few-Layer Graphene and Copper Nanoparticles
Authors:
Zahra Barani,
Amirmahdi Mohammadzadeh,
Adane Geremew,
Chun Yu Tammy Huang,
Devin Coleman,
Lorenzo Mangolini,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
The thermal properties of an epoxy-based binary composites comprised of graphene and copper nanoparticles are reported. It is found that the "synergistic" filler effect, revealed as a strong enhancement of the thermal conductivity of composites with the size-dissimilar fillers, has a well-defined filler loading threshold. The thermal conductivity of composites with a moderate graphene concentratio…
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The thermal properties of an epoxy-based binary composites comprised of graphene and copper nanoparticles are reported. It is found that the "synergistic" filler effect, revealed as a strong enhancement of the thermal conductivity of composites with the size-dissimilar fillers, has a well-defined filler loading threshold. The thermal conductivity of composites with a moderate graphene concentration of ~15 wt% exhibits an abrupt increase as the loading of copper nanoparticles approaches ~40 wt%, followed by saturation. The effect is attributed to intercalation of spherical copper nanoparticles between the large graphene flakes, resulting in formation of the highly thermally conductive percolation network. In contrast, in composites with a high graphene concentration, ~40 wt%, the thermal conductivity increases linearly with addition of copper nanoparticles. The electrical percolation is observed at low graphene loading, less than 7 wt.%, owing to the large aspect ratio of graphene. At all concentrations of the fillers, below and above the electrical percolation threshold, the thermal transport is dominated by phonons. The obtained results shed light on the interaction between graphene fillers and copper nanoparticles in the composites and demonstrate potential of such hybrid epoxy composites for practical applications in thermal interface materials and adhesives.
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Submitted 21 May, 2019;
originally announced May 2019.
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Low-Frequency Noise Spectroscopy of Charge-Density-Wave Phase Transitions in Vertical Quasi-2D Devices
Authors:
Ruben Salgado,
Amirmahdi Mohammadzadeh,
Fariborz Kargar,
Adane Geremew,
Chun-Yu Huang,
Matthew A. Bloodgood,
Sergey Rumyantsev,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks - changing by more than an order-of-magnitude - at the temperature…
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We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks - changing by more than an order-of-magnitude - at the temperatures closely matching the electrical resistance steps. Some of the noise peaks appeared below the temperature of the commensurate to nearly-commensurate charge-density-wave transition, possibly indicating the presence of the debated "hidden" phase transitions. These results confirm the potential of the noise spectroscopy for investigations of electron transport and phase transitions in novel materials.
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Submitted 5 January, 2019;
originally announced January 2019.
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Several Quantitative Characterizations of Some Specific Groups
Authors:
A. Mohammadzadeh,
A. R. Moghaddamfar
Abstract:
Let $G$ be a finite group and let $π(G)=\{p_1, p_2, \ldots, p_k\}$ be the set of prime divisors of $|G|$ for which $p_1<p_2<\cdots<p_k$. The Gruenberg-Kegel graph of $G$, denoted ${\rm GK}(G)$, is defined as follows: its vertex set is $π(G)$ and two different vertices $p_i$ and $p_j$ are adjacent by an edge if and only if $G$ contains an element of order $p_ip_j$. The degree of a vertex $p_i$ in…
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Let $G$ be a finite group and let $π(G)=\{p_1, p_2, \ldots, p_k\}$ be the set of prime divisors of $|G|$ for which $p_1<p_2<\cdots<p_k$. The Gruenberg-Kegel graph of $G$, denoted ${\rm GK}(G)$, is defined as follows: its vertex set is $π(G)$ and two different vertices $p_i$ and $p_j$ are adjacent by an edge if and only if $G$ contains an element of order $p_ip_j$. The degree of a vertex $p_i$ in ${\rm GK}(G)$ is denoted by $d_G(p_i)$ and the $k$-tuple $D(G)=\left(d_G(p_1), d_G(p_2), \ldots, d_G(p_k)\right)$ is said to be the degree pattern of $G$. Moreover, if $ω\subseteq π(G)$ is the vertex set of a connected component of ${\rm GK}(G)$, then the largest $ω$-number which divides $|G|$, is said to be an order component of ${\rm GK}(G)$. We will say that the problem of OD-characterization is solved for a finite group if we find the number of pairwise non-isomorphic finite groups with the same order and degree pattern as the group under study. The purpose of this article is twofold. First, we completely solve the problem of OD-characterization for every finite non-abelian simple group with orders having prime divisors at most 29. In particular, we show that there are exactly two non-isomorphic finite groups with the same order and degree pattern as $U_4(2)$. Second, we prove that there are exactly two non-isomorphic finite groups with the same order components as $U_5(2)$.
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Submitted 27 November, 2015;
originally announced November 2015.
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Utilization of the Transverse Deflecting RF Cavities in the Designed QBA Lattice of the 3 GeV Taiwan Photon Source
Authors:
Hossein Ghasem,
Gwo Huei Luo,
Ahmad Mohammadzadeh
Abstract:
A pair of superconducting transverse deflecting RF cavities has been studied in the QBA low emittance lattices of the 3 GeV TPS for generating ultra short X-ray pulses. Three configurations with different locations for the two cavities in a super-period of the TPS ring are investigated. During numerous turns of the electron tracking, the nonlinear effects between the cavities, the energy spread,…
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A pair of superconducting transverse deflecting RF cavities has been studied in the QBA low emittance lattices of the 3 GeV TPS for generating ultra short X-ray pulses. Three configurations with different locations for the two cavities in a super-period of the TPS ring are investigated. During numerous turns of the electron tracking, the nonlinear effects between the cavities, the energy spread, the momentum compaction factor, and the synchrotron radiation effects are taken into account. The configuration with positioning the RF deflectors between the QBA cells in each super-period as an optimum arrangement gives rise to better quality electron bunches and radiated photon pulses. The FWHM of the radiated photon pulses of about 540 fs with an acceptable intensity is attained by optimizing the compression optical elements of the TPS photon beam line. Furthermore, the effects of the electron bunch length are studied by alternatively employing an accelerating RF cavity operating with 1.1 MV and 3.0 MV, respectively. The operation of the accelerating RF cavity at 3.0 MV improved the intensity of the photon pulses up to 30% and reduced the equilibrium vertical emittance down to 70 pm-rad. The error tolerance for the deflecting cavities, QBA lattice and injection process are also evaluated.
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Submitted 15 December, 2009;
originally announced December 2009.