Showing 1–45 of 45 results for author: Mitani, S

Conceptual Design on the Field of View of Celestial Navigation Systems for Maritime Autonomous Surface Ships

Authors: Kouki Wakita, Fuyuki Hane, Takeshi Sekiguchi, Shigehito Shimizu, Shinji Mitani, Youhei Akimoto, Atsuo Maki

Abstract: In order to understand the appropriate field of view (FOV) size of celestial automatic navigation systems for surface ships, we investigate the variations of measurement accuracy of star position and probability of successful star identification with respect to FOV, focusing on the decreasing number of observable star magnitudes and the presence of physically covered stars in marine environments.… ▽ More In order to understand the appropriate field of view (FOV) size of celestial automatic navigation systems for surface ships, we investigate the variations of measurement accuracy of star position and probability of successful star identification with respect to FOV, focusing on the decreasing number of observable star magnitudes and the presence of physically covered stars in marine environments. The results revealed that, although a larger FOV reduces the measurement accuracy of star positions, it increases the number of observable objects and thus improves the probability of star identification using subgraph isomorphism-based methods. It was also found that, although at least four objects need to be observed for accurate identification, four objects may not be sufficient for wider FOVs. On the other hand, from the point of view of celestial navigation systems, a decrease in the measurement accuracy leads to a decrease in positioning accuracy. Therefore, it was found that maximizing the FOV is required for celestial automatic navigation systems as long as the desired positioning accuracy can be ensured. Furthermore, it was found that algorithms incorporating more than four observed celestial objects are required to achieve highly accurate star identification over a wider FOV. △ Less

Submitted 28 August, 2024; originally announced August 2024.

Comments: 15 pages, 10 figures

Theory for Tunnel Magnetoresistance Oscillation

Authors: Keisuke Masuda, Thomas Scheike, Hiroaki Sukegawa, Yusuke Kozuka, Seiji Mitani, Yoshio Miura

Abstract: The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To explain this, we here introduce a superposition of wave functions with opposite spins and different Fermi momenta, based on the fact that spin-flip scattering near… ▽ More The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To explain this, we here introduce a superposition of wave functions with opposite spins and different Fermi momenta, based on the fact that spin-flip scattering near the interface provides a hybridization between majority- and minority-spin states. In a typical Fe/MgO/Fe MTJ, we solve the tunneling problem and show that the TMR ratio oscillates with a period of $\sim3\,$Å by varying the MgO thickness, consistent with previous and present experimental observations. △ Less

Submitted 17 June, 2024; v1 submitted 12 June, 2024; originally announced June 2024.

Comments: 6 pages,4 figures

Growth of [001]-oriented polycrystalline Heusler alloy thin films using [001]-textured Ag buffer layer on thermally oxidized Si substrate for spintronics applications

Authors: Dolly Taparia, Taisuke T. Sasaki, Tomoya Nakatani, Hirofumi Suto, Seiji Mitani, Yuya Sakuraba

Abstract: To utilize half-metallic Heusler alloys in practical spintronic devices, such as magnetic sensors and magnetic memories, the key is to realize highly textured and structurally ordered polycrystalline thin films. In this study, we fabricated polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films deposited on a [001]-oriented Ag buffer layer, which was achieved by introducing N2 into Ar during t… ▽ More To utilize half-metallic Heusler alloys in practical spintronic devices, such as magnetic sensors and magnetic memories, the key is to realize highly textured and structurally ordered polycrystalline thin films. In this study, we fabricated polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films deposited on a [001]-oriented Ag buffer layer, which was achieved by introducing N2 into Ar during the sputtering process, on a thermally oxidized Si substrate. We obtained strongly [001]-oriented CFGG films with B2 ordering and a high saturation magnetization close to the theoretical value, which can provide highly spin-polarized electric and spin current sources in spintronic devices with industrial viability. △ Less

Submitted 14 May, 2024; originally announced May 2024.

Comments: 16 papers, 5 figures

Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure

Authors: Jieyuan Song, Thomas Scheike, Cong He, Zhenchao Wen, Tadakatsu Ohkubo, Kazuhiro Hono, Hiroaki Sukegawa, Seiji Mitani

Abstract: Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxi… ▽ More Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxial CoFe/rock-salt MgAlO (MAO)/CoFe is explored to introduce close-packed lattice systems into MTJs. Using an atomically flat Ru(0001) epitaxial buffer layer, fcc(111) epitaxial growth of the CoFe/MAO/CoFe trilayer is achieved. Sharp CoFe(111)/MAO(111) interfaces are confirmed due to the introduction of periodic dislocations by forming a 5:6 in-plane lattice matching structure. The fabricated (111) MTJ exhibits a tunnel magnetoresistance ratio of 37% at room temperature (47% at 10 K). Symmetric differential conductance curves with respect to bias polarity are observed, indicating the achievement of nearly identical upper and lower MAO interface qualities. Despite the charge-uncompensated (111) orientation for a rock-salt-like MAO barrier, the achievement of flat, stable, and spin-polarized barrier interfaces opens a promising avenue for expanding the design of MTJ structures. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Comments: 18 pages, 5 figures

Oxide layer dependent orbital torque efficiency in ferromagnet/Cu/Oxide heterostructures

Authors: Junyeon Kim, Jun Uzuhashi, Masafumi Horio, Tomoaki Senoo, Dongwook Go, Daegeun Jo, Toshihide Sumi, Tetsuya Wada, Iwao Matsuda, Tadakatsu Ohkubo, Seiji Mitani, Hyun-Woo Lee, YoshiChika Otani

Abstract: The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin manipulation grows, we face a new issue to identify the underlying physics that determines the efficiency of orbital torque (OT). In this study, we systematically investigate the variation of OT governed by orbital Rashba-Edelstein effect at the Cu/Oxide interfa… ▽ More The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin manipulation grows, we face a new issue to identify the underlying physics that determines the efficiency of orbital torque (OT). In this study, we systematically investigate the variation of OT governed by orbital Rashba-Edelstein effect at the Cu/Oxide interface, as we change the Oxide material. We find that OT varies by a factor of ~2, depending on the Oxide. Our results suggest that the active electronic interatomic interaction (hopping) between Cu and oxygen atom is critical in determining OT. This also gives us an idea of what type of material factors is critical in forming a chiral orbital Rashba texture at the Cu/Oxide interface. △ Less

Submitted 19 July, 2023; originally announced July 2023.

Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers

Authors: Keisuke Masuda, Hiroyoshi Itoh, Yoshiaki Sonobe, Hiroaki Sukegawa, Seiji Mitani, Yoshio Miura

Abstract: We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles calculation and the Landauer formula shows that the Co-based MTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value (290%). Since the in-p… ▽ More We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles calculation and the Landauer formula shows that the Co-based MTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value (290%). Since the in-plane lattice periodicity of SrTiO$_{3}$ is about twice that of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) are folded in the $k_x$-$k_y$ plane corresponding to the $ab$ plane of the MTJ supercell. We find that this band folding gives a half-metallic band structure in the $Λ_1$ state of Co (Ni) and the coherent tunneling of such a half-metallic $Λ_1$ state yields a high TMR ratio. We also reveal that the difference in the TMR ratio between the Co- and Ni-based MTJs can be understood by different $s$-orbital weights in the $Λ_1$ band at the Fermi level. △ Less

Submitted 31 October, 2022; v1 submitted 14 September, 2022; originally announced September 2022.

Comments: 7 pages, 5 figures, 3 tables

Journal ref: Phys. Rev. B 106, 134438 (2022)

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions

Authors: Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa, Seiji Mitani

Abstract: The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currentl… ▽ More The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Comments: 40 pages, 10 figures, 1 table

Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions

Authors: Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa, Seiji Mitani

Abstract: Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a Fe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation of Mg4Al-Ox. Resistance oscillations with a MTJ barrier thickness of 0.3-nm were significantly enhanced com… ▽ More Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a Fe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation of Mg4Al-Ox. Resistance oscillations with a MTJ barrier thickness of 0.3-nm were significantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting in a large TMR oscillation peak-to-valley difference of 125% at RT. The differential conductance spectra were symmetric with bias polarity, and the spectrum in the parallel magnetization state at low temperature demonstrate significant peaks within broad local minima at |0.2-0.6| V, indicating improved barrier interfaces by the Mg4Al-Ox barrier. This study demonstrates that TMR ratios in Fe(001)-MTJs can still be improved. △ Less

Submitted 18 December, 2021; originally announced December 2021.

Comments: 14 pages, 1 table, 4 figures

Spin Hall effect in a spin-1 chiral semimetal

Authors: Ke Tang, Yong-Chang Lau, Kenji Nawa, Zhenchao Wen, Qingyi Xiang, Hiroaki Sukegawa, Takeshi Seki, Yoshio Miura, Koki Takanashi, Seiji Mitani

Abstract: Spin-1 chiral semimetal is a new state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal material that accommodates such an exotic quasiparticle. To date, the spin transport properties in the spin-1 chiral semimetals, have not been explored yet. In this work, we fabricated B20-CoSi thin films on sapphire c-… ▽ More Spin-1 chiral semimetal is a new state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal material that accommodates such an exotic quasiparticle. To date, the spin transport properties in the spin-1 chiral semimetals, have not been explored yet. In this work, we fabricated B20-CoSi thin films on sapphire c-plane substrates by magnetron sputtering and studied the spin Hall effect (SHE) by combining experiments and first-principles calculations. The SHE of CoSi using CoSi/CoFeB/MgO heterostructures was investigated via spin Hall magnetoresistance and harmonic Hall measurements. First-principles calculations yield an intrinsic spin Hall conductivity (SHC) at the Fermi level that is consistent with the experiments and reveal its unique Fermi-energy dependence. Unlike the Dirac and Weyl fermion-mediated Hall conductivities that exhibit a peak-like structure centering around the topological node, SHC of B20-CoSi is odd and crosses zero at the node with two antisymmetric local extrema of opposite sign situated below and above in energy. Hybridization between Co d-Si p orbitals and spin-orbit coupling are essential for the SHC, despite the small (~1%) weight of Si p-orbital near the Fermi level. This work expands the horizon of topological spintronics and highlights the importance of Fermi-level tuning in order to fully exploit the topology of spin-1 chiral fermions for spin current generation. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Comments: 24 pages, 6 figures

Journal ref: Phys. Rev. Research 3, 033101 (2021)

Quantum-well tunneling anisotropic magnetoresistance above room temperature

Authors: Muftah Al-Mahdawi, Qingyi Xiang, Yoshio Miura, Mohamed Belmoubarik, Keisuke Masuda, Shinya Kasai, Hiroaki Sukegawa, Seiji Mitani

Abstract: Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). In this work, we demonstrate the spin-based control of the quantized states in iron $3d$-band QWs, as observed in experiments and theoretical calculations. We find that the magnetization rotation in the Fe QWs significant… ▽ More Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). In this work, we demonstrate the spin-based control of the quantized states in iron $3d$-band QWs, as observed in experiments and theoretical calculations. We find that the magnetization rotation in the Fe QWs significantly shifts the QW quantization levels, which modulate the resonant-tunneling current in MTJs, resulting in a tunneling anisotropic magnetoresistance (TAMR) effect of QWs. This QW-TAMR effect is sizable compared to other types of TAMR effect, and it is present above the room-temperature. In a QW MTJ of Cr/Fe/MgAl$_2$O$_4$/top electrode, where the QW is formed by a mismatch between Cr and Fe in the $d$ band with $Δ_1$ symmetry, a QW-TAMR ratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at 380K. The magnetic control of QW transport can open new applications for spin-coupled optoelectronic devices, ultra-thin sensors, and memories. △ Less

Submitted 18 May, 2021; v1 submitted 13 May, 2021; originally announced May 2021.

Perpendicular magnetic anisotropy at Fe/Au(111) interface studied by Mössbauer, x-ray absorption, and photoemission spectroscopies

Authors: Jun Okabayashi, Songtian Li, Seiji Sakai, Yasuhiro Kobayashi, Takaya Mitsui, Kiyohisa Tanaka, Yoshio Miura, Seiji Mitani

Abstract: The origin of the interfacial perpendicular magnetic anisotropy (PMA) induced in the ultrathin Fe layer on the Au(111) surface was examined using synchrotron-radiation-based Mössbauer spectroscopy (MS), X-ray magnetic circular dichroism (XMCD), and angle-resolved photoemission spectroscopy (ARPES). To probe the detailed interfacial electronic structure of orbital hybridization between the Fe 3$d$… ▽ More The origin of the interfacial perpendicular magnetic anisotropy (PMA) induced in the ultrathin Fe layer on the Au(111) surface was examined using synchrotron-radiation-based Mössbauer spectroscopy (MS), X-ray magnetic circular dichroism (XMCD), and angle-resolved photoemission spectroscopy (ARPES). To probe the detailed interfacial electronic structure of orbital hybridization between the Fe 3$d$ and Au 6$p$ bands, we detected the interfacial proximity effect, which modulates the valence-band electronic structure of Fe, resulting in PMA. MS and XMCD measurements were used to detect the interfacial magnetic structure and anisotropy in orbital magnetic moments, respectively. $In$-$situ$ ARPES also confirms the initial growth of Fe on large spin-orbit coupled surface Shockley states under Au(111) modulated electronic states in the vicinity of the Fermi level. This suggests that PMA in the Fe/Au(111) interface originates from the cooperation effects among the spin, orbital magnetic moments in Fe, and large spin-orbit coupling in Au. These findings pave the way to develop interfacial PMA using $p$-$d$ hybridization with a large spin-orbit interaction. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. B 103, 104435 (2021)

Magnetization switching induced by spin-orbit torque from Co2MnGa magnetic Weyl semimetal thin films

Authors: Ke Tang, Zhenchao Wen, Yong-Chang Lau, Hiroaki Sukegawa, Takeshi Seki, Seiji Mitani

Abstract: This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure and a relatively large spin Hall efficie… ▽ More This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure and a relatively large spin Hall efficiency of -7.8% was obtained.The SOT-induced magnetization switching of the perpendicularly magnetized CoFeB layer was further demonstrated using the structure. The symmetry of second harmonic signals, thickness dependence of spin Hall efficiency, and shift of anomalous Hall loops under applied currents were also investigated. This study not only contributes to the understanding of the mechanisms of spin-current generation from magnetic-WSM-based heterostructures, but also paves a way for the applications of magnetic WSMs in spintronic devices. △ Less

Submitted 18 January, 2021; originally announced January 2021.

Comments: 15 pages, 4 figures

Journal ref: Appl. Phys. Lett. 118, 062402 (2021)

Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

Authors: Thomas Scheike, Qingyi Xiang, Zhenchao Wen, Hiroaki Sukegawa, Tadakatsu Ohkubo, Kazuhiro Hono, Seiji Mitani

Abstract: Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a funct… ▽ More Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Comments: 21 pages, 7 figures

Voltage-controlled magnetic anisotropy under the electronic structure modulation in quantum wells

Authors: Qingyi Xiang, Yoshio Miura, Muftah Al-Mahdawi, Thomas Scheike, Xiandong Xu, Yuya Sakuraba, Shinya Kasai, Zhenchao Wen, Hiroaki Sukegawa, Seiji Mitani, Kazuhiro Hono

Abstract: Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ… ▽ More Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ with an even number of Fe atomic layers, we observed a novel A-shaped VCMA curve for a particular QW state, where magnetic anisotropy energy (MAE) reaches a local maximum at zero bias and reduces when applying both positive and negative bias, i.e., a novel bi-polar VCMA effect. Our ab initio calculations demonstrate that the QW states give an additional contribution to perpendicular magnetic anisotropy (PMA), which can explain not only the A-shaped VCMA but also the Fe-layer-number parity dependence of VCMA. The present study suggests that the QW-modulated VCMA should open a new pathway to design VCMA-assisted MRAM. △ Less

Submitted 13 November, 2020; originally announced November 2020.

Comments: 26 pages, 8 figures

Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study

Authors: Keisuke Masuda, Hiroyoshi Itoh, Yoshiaki Sonobe, Hiroaki Sukegawa, Seiji Mitani, Yoshio Miura

Abstract: We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculatio… ▽ More We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculations. The analysis shows that the MTJs with Co-based alloys (CoNi, CoPt, and CoPd) have high TMR ratios over 2000$\%$. These MTJs have energetically favored Co-O interfaces where interfacial antibonding between Co $d$ and O $p$ states is formed around the Fermi level. We find that the resonant tunneling of the antibonding states, called the interface resonant tunneling, is the origin of the obtained high TMR ratios. Our calculation of the magnetocrystalline anisotropy shows that many $L1_1$ alloys have large perpendicular magnetic anisotropy (PMA). In particular, CoPt has the largest value of anisotropy energy $K_{\rm u} \approx 10\,{\rm MJ/m^3}$. We further conduct a perturbation analysis of the PMA with respect to the spin-orbit interaction and reveal that the large PMA in CoPt and CoNi mainly originates from spin-conserving perturbation processes around the Fermi level. △ Less

Submitted 22 February, 2021; v1 submitted 2 July, 2020; originally announced July 2020.

Comments: 11 pages, 9 figures, 2 tables

Journal ref: Phys. Rev. B 103, 064427 (2021)

Fermi level tuning and atomic ordering induced giant anomalous Nernst effect in Co2MnAl1-xSix Heusler alloy

Authors: Y. Sakuraba, K. Hyodo, A. Sakuma, S. Mitani

Abstract: Co2MnAl has been predicted to have Weyl points near Fermi level which is expected to give rise to exotic transverse transport properties such as large anomalous Hall(AHE) and Nernst effects(ANE) due to large Berry curvature. In this study, the effect of Fermi level position and atomic ordering on AHE and ANE in Co2MnAl1-xSix were studied systematically. The Co2MnAl film keeps B2-disordred structur… ▽ More Co2MnAl has been predicted to have Weyl points near Fermi level which is expected to give rise to exotic transverse transport properties such as large anomalous Hall(AHE) and Nernst effects(ANE) due to large Berry curvature. In this study, the effect of Fermi level position and atomic ordering on AHE and ANE in Co2MnAl1-xSix were studied systematically. The Co2MnAl film keeps B2-disordred structure regardless of annealing temperature, which results in much smaller anomalous Hall conductivity sigma_xy and transverse Peltier coefficient sigma_xy than those calculated for L21-ordered Co2MnAl. Our newly performed calculation of sigma_xy with taking B2 disordering into account well reproduces experimental result, thus it was concluded that Berry curvature originating from Weyl points is largely reduced by B2 disordering. It was also revealed Al substitution with Si shifts the position of Fermi level and improves the L21-atomic ordering largely, leading to strong enhancement of sigma_xy, which also agreed with our theoretical calculation. The highest thermopower of ANE of 6.1uV, which is comparable to the recent reports for Co2MnGa, was observed for Co2MnAl0.63Si0.37 because of dominant contribution of sigma_xy. This study clearly shows the importance of both Fermi level tuning and high atomic ordering for obtaining the effect of topological feature in Co-based Heusler alloys on transverse transport properties. △ Less

Submitted 14 November, 2019; originally announced November 2019.

Comments: 5 figures. arXiv admin note: text overlap with arXiv:1807.02209

Report number: Phys. Rev. B 101, 134407 (2020)

Strategic enhancement of anomalous Nernst effect in Co2MnAl1-xSix Heusler compounds

Authors: Y. Sakuraba, K. Hyodo, A. Sakuma, S. Mitani

Abstract: The anomalous Nernst effect (ANE), a thermoelectric phenomenon in magnetic materials, has potential for novel energy harvesting applications because its orthogonal relationship between the temperature gradient and the electric field enables us to utilize the large area of non-flat heat sources. In this study, the required thermopower of ANE for practical energy harvesting applications is evaluated… ▽ More The anomalous Nernst effect (ANE), a thermoelectric phenomenon in magnetic materials, has potential for novel energy harvesting applications because its orthogonal relationship between the temperature gradient and the electric field enables us to utilize the large area of non-flat heat sources. In this study, the required thermopower of ANE for practical energy harvesting applications is evaluated in simulations of electric power obtainable from ANE using a low-temperature heat source. A strategy for finding magnetic materials having large ANEs is proposed, which suggests that a large ANE originates from the constructive relationship between large Seebeck, anomalous Hall, and transverse Peltier effects. This strategy leads us to investigate the electric and thermoelectric properties in Co2MnAl1-xSix. As a result, it is found that Co2MnAl0.63Si0.37 has the largest ANE thermopower ever reported, 6.2 uV/K. A first principles calculation of the anomalous Hall conductivity and transverse Peltier coefficient in B2 and L21-ordered Co2MnAl0.63Si0.37 shows close agreement with the experimental results, indicating that the observed large ANE arises from the intrinsic Berry phase curvature of Co2MnAl1-xSix. This study can be a guide for developing materials for new thermoelectric applications using ANE. △ Less

Submitted 14 November, 2019; v1 submitted 5 July, 2018; originally announced July 2018.

Comments: We found a error in this paper, thus we should withdraw it

Large perpendicular magnetic anisotropy in epitaxial Fe/MgAl2O4(001) heterostructures

Authors: Qingyi Xiang, Ruma Mandal, Hiroaki Sukegawa, Yukiko K. Takahashi, Seiji Mitani

Abstract: We investigated perpendicular magnetic anisotropy (PMA) and related properties of epitaxial Fe (0.7 nm)/MgAl2O4(001) heterostructures prepared by electron-beam evaporation. Using an optimized structure, we obtained a large PMA energy ~1 MJ/m3 at room temperature, comparable to that in ultrathin-Fe/MgO(001) heterostructures. Both the PMA energy and saturation magnetization show weak temperature dep… ▽ More We investigated perpendicular magnetic anisotropy (PMA) and related properties of epitaxial Fe (0.7 nm)/MgAl2O4(001) heterostructures prepared by electron-beam evaporation. Using an optimized structure, we obtained a large PMA energy ~1 MJ/m3 at room temperature, comparable to that in ultrathin-Fe/MgO(001) heterostructures. Both the PMA energy and saturation magnetization show weak temperature dependence, ensuring wide working temperature in application. The effective magnetic damping constant of the 0.7 nm Fe layer was ~0.02 using time-resolved magneto-optical Kerr effect. This study demonstrates capability of the Fe/MgAl2O4 heterostructure for perpendicular magnetic tunnel junctions, as well as a good agreement with theoretical predictions. △ Less

Submitted 19 April, 2018; v1 submitted 17 April, 2018; originally announced April 2018.

Comments: E-mail: XIANG. Qingyi@nims.go.jp

Journal ref: Qingyi Xiang et al 2018 Appl. Phys. Express 11 063008

Nonlinear electric field effect on perpendicular magnetic anisotropy in Fe/MgO interfaces

Authors: Qingyi Xiang, Zhenchao Wen, Hiroaki Sukegawa, Shinya Kasai, Takeshi Seki, Takahide Kubota, Koki Takanashi, Seiji Mitani

Abstract: The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature dependences. A large coefficient of the electric field effect of more than 200 fJ/Vm was observed in the negative range of electric field, as well as an areal ener… ▽ More The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature dependences. A large coefficient of the electric field effect of more than 200 fJ/Vm was observed in the negative range of electric field, as well as an areal energy density of perpendicular magnetic anisotropy (PMA) of around 600 uJ/m2. More interestingly, nonlinear behavior, giving rise to a local minimum around +100 mV/nm, was observed in the electric field dependence of magnetic anisotropy, being independent of the post-annealing and measurement temperatures. The insensitivity to both the interface conditions and the temperature of the system suggests that the nonlinear behavior is attributed to an intrinsic origin such as an inherent electronic structure in the Fe/MgO interface. The present study can contribute to the progress in theoretical studies, such as ab initio calculations, on the mechanism of the electric field effect on PMA. △ Less

Submitted 7 July, 2017; originally announced July 2017.

Journal ref: Qingyi Xiang et al 2017 J. Phys. D: Appl. Phys. 50 40LT04

Electric field modulation of the non-linear areal magnetic anisotropy energy

Authors: Yong-Chang Lau, Peng Sheng, Seiji Mitani, Daichi Chiba, Masamitsu Hayashi

Abstract: We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When the effective CoFeB thickness is below ~1 nm, the VCMA efficiency of Ta/CoFeB/MgO heterostructures considerably decreases with decreasing CoFeB thickness. We find that a high order phenomenological term used to describe th… ▽ More We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When the effective CoFeB thickness is below ~1 nm, the VCMA efficiency of Ta/CoFeB/MgO heterostructures considerably decreases with decreasing CoFeB thickness. We find that a high order phenomenological term used to describe the thickness dependence of the areal magnetic anisotropy energy can also account for the change in the areal VCMA efficiency. In this structure, the higher order term competes against the common interfacial VCMA, thereby reducing the efficiency at lower CoFeB thickness. The areal VCMA efficiency does not saturate even when the effective CoFeB thickness exceeds ~1 nm. We consider the higher order term is related to the strain that develops at the CoFeB/MgO interface: as the average strain of the CoFeB layer changes with its thickness, the electronic structure of the CoFeB/MgO interface varies leading to changes in areal magnetic anisotropy energy and VCMA efficiency. △ Less

Submitted 15 January, 2017; originally announced January 2017.

Journal ref: Appl. Phys. Lett. 110, 022405 (2017)

MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height

Authors: Hiroaki Sukegawa, Yushi Kato, Mohamed Belmoubarik, P. -H. Cheng, Tadaomi Daibou, Naoharu Shimomura, Yuuzo Kamiguchi, Junichi Ito, Hiroaki Yoda, Tadakatsu Ohkubo, Seiji Mitani, Kazuhiro Hono

Abstract: Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with… ▽ More Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the barrier height of the MgGa2O4 barrier is much lower than that in an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product. △ Less

Submitted 11 November, 2016; originally announced November 2016.

Comments: 4 figures, 1 table

Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures

Authors: Zhenchao Wen, Hiroaki Sukegawa, Takeshi Seki, Takahide Kubota, Koki Takanashi, Seiji Mitani

Abstract: Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in novel epitaxial Ru/Co2FeAl(CFA)/MgO heterostructures with interfacial perpendicular magnetic anisotropy (PMA). Perpendicularly magnetized tunnel junctions with… ▽ More Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in novel epitaxial Ru/Co2FeAl(CFA)/MgO heterostructures with interfacial perpendicular magnetic anisotropy (PMA). Perpendicularly magnetized tunnel junctions with the structure of Ru/CFA/MgO were fabricated and exhibited an effective voltage control on switching fields for the CFA free layer. A large VCMA coefficient of 108 (139) fJ/Vm for the CFA film was achieved at room temperature (4 K). The interfacial stability in the heterostructure was confirmed by repeating measurements. Temperature dependences of both the interfacial PMA and the VCMA effect were also investigated. It is found that the temperature dependences follow power laws of the saturation magnetization with an exponent of ~2. The significant VCMA effect observed in this work indicates that the Ru/CFA/MgO heterostructure could be one of the promising candidates for spintronic devices with voltage control. △ Less

Submitted 9 November, 2016; originally announced November 2016.

Comments: 16 pages, 4 figures

Journal ref: Sci. Rep. 7, 45026 (2017)

Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions

Authors: Mohamed Belmoubarik, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani, Kazuhiro Hono

Abstract: We investigated the effect of a Mg-Al layer insertion at the bottom interface of epitaxial Fe/$MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion… ▽ More We investigated the effect of a Mg-Al layer insertion at the bottom interface of epitaxial Fe/$MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a large TMR ratio above 200% at room temperature and observing a distinct local minimum structure in conductance spectra. In contrast, thicker Mg-Al (> 0.2 nm) induced a reduction of TMR ratios and featureless conductance spectra, indicating a degradation of the bottom-Fe/$MgAl_{2}O_{4}$ interface. Therefore, a minimal Mg-Al insertion was found to be effective to maximize the TMR ratio for a sputtered $MgAl_{2}O_{4}$-based MTJ. △ Less

Submitted 8 November, 2016; originally announced November 2016.

Comments: 16 pages, 4 figures, accepted to "AIP Advances" as conference proceeding paper (61st Annual Conference on Magnetism and Magnetic Materials, New Orleans, USA)

Journal ref: AIP Advances (2017)

Interdiffusion in epitaxial ultrathin Co2FeAl/MgO heterostructures with interface-induced perpendicular magnetic anisotropy

Authors: Zhenchao Wen, Jason Paul Hadorn, Jun Okabayashi, Hiroaki Sukegawa, Tadakatsu Ohkubo, Koichiro Inomata, Seiji Mitani, Kazuhiro Hono

Abstract: The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-… ▽ More The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-Fe-Al/Mg-Al-O structure near the Co2FeAl/MgO interface. This atomic replacement may play an additional role for enhancing PMA, which is consistent with the observed large perpendicular orbital magnetic moments of Fe atoms at the interface. This work suggests that control of interdiffusion at ferromanget/barrier interfaces is critical for designing an interface-induced PMA system. △ Less

Submitted 10 October, 2016; originally announced October 2016.

Comments: 5 figures

The Spin Nernst effect in Tungsten

Authors: Peng Sheng, Yuya Sakuraba, Yong-Chang Lau, Saburo Takahashi, Seiji Mitani, Masamitsu Hayashi

Abstract: The spin Hall effect allows generation of spin current when charge current is passed along materials with large spin orbit coupling. It has been recently predicted that heat current in a non-magnetic metal can be converted into spin current via a process referred to as the spin Nernst effect. Here we report the observation of the spin Nernst effect in W. In W/CoFeB/MgO heterostructures, we find ch… ▽ More The spin Hall effect allows generation of spin current when charge current is passed along materials with large spin orbit coupling. It has been recently predicted that heat current in a non-magnetic metal can be converted into spin current via a process referred to as the spin Nernst effect. Here we report the observation of the spin Nernst effect in W. In W/CoFeB/MgO heterostructures, we find changes in the longitudinal and transverse voltages with magnetic field when temperature gradient is applied across the film. The field-dependence of the voltage resembles that of the spin Hall magnetoresistance. A comparison of the temperature gradient induced voltage and the spin Hall magnetoresistance allows direct estimation of the spin Nernst angle. We find the spin Nernst angle of W to be similar in magnitude but opposite in sign with its spin Hall angle. Interestingly, under an open circuit condition, such sign difference results in spin current generation larger than otherwise. These results highlight the distinct characteristics of the spin Nernst and spin Hall effects, providing pathways to explore materials with unique band structures that may generate large spin current with high efficiency. △ Less

Submitted 20 September, 2017; v1 submitted 22 July, 2016; originally announced July 2016.

Journal ref: Science Advances 3, e1701503 (2017)

Current-Induced Instability of a Perpendicular Ferromagnet in Spin Hall Geometry

Authors: Tomohiro Taniguchi, Seiji Mitani, Masamitsu Hayashi

Abstract: We develop a theoretical formula of spin Hall torque in the presence of two ferromagnets. While the direction of the conventional spin Hall torque always points to the in-plane direction, the present system enables to manipulate the torque direction acting on one magnetization by changing the direction of another magnetization. Based on the diffusion equation of the spin accumulation and the Landa… ▽ More We develop a theoretical formula of spin Hall torque in the presence of two ferromagnets. While the direction of the conventional spin Hall torque always points to the in-plane direction, the present system enables to manipulate the torque direction acting on one magnetization by changing the direction of another magnetization. Based on the diffusion equation of the spin accumulation and the Landauer formula, we derive analytical formula of the spin Hall torque. The present model provides a solution to switch a perpendicular ferromagnet deterministically at zero field using the spin Hall effect. △ Less

Submitted 23 June, 2016; originally announced June 2016.

Comments: 5 pages, 2 figures, conference proceeding of Joing MMM/Intermag conference 2016

Journal ref: IEEE Trans. Magn. 52, 1400204 (2016)

Spin-orbit torque in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO epitaxial magnetic heterostructures

Authors: Zhenchao Wen, Junyeon Kim, Hiroaki Sukegawa, Masamitsu Hayashi, Seiji Mitani

Abstract: We study the spin-orbit torque (SOT) effective fields in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO magnetic heterostructures using the adiabatic harmonic Hall measurement. High-quality perpendicular-magnetic-anisotropy CoFeAl layers were grown on Cr and Ru layers. The magnitudes of the SOT effective fields were found to significantly depend on the underlayer material (Cr or Ru) as well as their thicknesses.… ▽ More We study the spin-orbit torque (SOT) effective fields in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO magnetic heterostructures using the adiabatic harmonic Hall measurement. High-quality perpendicular-magnetic-anisotropy CoFeAl layers were grown on Cr and Ru layers. The magnitudes of the SOT effective fields were found to significantly depend on the underlayer material (Cr or Ru) as well as their thicknesses. The damping-like longitudinal effective field (ΔH_L) increases with increasing underlayer thickness for all heterostructures. In contrast, the field-like transverse effective field (ΔH_T) increases with increasing Ru thickness while it is almost constant or slightly decreases with increasing Cr thickness. The sign of ΔH_L observed in the Cr-underlayer devices is opposite from that in the Ru-underlayer devices while ΔH_T shows the same sign with a small magnitude. The opposite directions of ΔHL indicate that the signs of spin Hall angle in Cr and Ru are opposite, which are in good agreement with theoretical predictions. These results show sizable contribution from SOT even for elements with small spin orbit coupling such as 3d Cr and 4d Ru. △ Less

Submitted 16 January, 2016; originally announced January 2016.

Comments: 10 pages, 5 figures, AIP Advances 2016

Journal ref: AIP ADVANCES 6, 056307 (2016)

Correlation between the spin Hall angle and the structural phases of early 5d transition metals

Authors: Jun Liu, Tadakatsu Ohkubo, Seiji Mitani, Kazuhiro Hono, Masamitsu Hayashi

Abstract: We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalli… ▽ More We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalline phases emerge as the thickness is increased for certain elements. We find that the heavy metal layer thickness dependence of the SMR reflects these changes in structure. The spin Hall angle largest |θ$_{SH}$| of Hf, Ta, W and Re (~0.11, 0.10, 0.23 and 0.07, respectively) is found when the dominant phase is amorphous-like. We find that the amorphous-like phase not only possesses large resistivity but also exhibits sizeable spin Hall conductivity, which both contribute to the emergence of the large spin Hall angle. △ Less

Submitted 11 December, 2015; originally announced December 2015.

Journal ref: Appl. Phys. Lett. 107, 232408 (2015)

Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy

Authors: Tetsuro Ueno, Jaivardhan Sinha, Nobuhito Inami, Yasuo Takeichi, Seiji Mitani, Kanta Ono, Masamitsu Hayashi

Abstract: We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlO$_x$ and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectrosco… ▽ More We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlO$_x$ and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlO$_x$, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlO$_x$, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures. △ Less

Submitted 15 October, 2015; originally announced October 2015.

Journal ref: Scientific Reports 5, 14858 (2015)

Spin Hall magnetoresistance in metallic bilayers

Authors: Junyeon Kim, Peng Sheng, Saburo Takahashi, Seiji Mitani, Masamitsu Hayashi

Abstract: Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator (FI) systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity with temperature. A model is… ▽ More Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator (FI) systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity with temperature. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the HM/FM interface. △ Less

Submitted 10 February, 2016; v1 submitted 31 March, 2015; originally announced March 2015.

Critical current destabilizing perpendicular magnetization by the spin Hall effect

Authors: Tomohiro Taniguchi, Seiji Mitani, Masamitsu Hayashi

Abstract: The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect is included in the Landau-Lifshitz-Gilbert equation to model the system. In the absence of the fieldlike torque, the critical current is independent of the dampi… ▽ More The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect is included in the Landau-Lifshitz-Gilbert equation to model the system. In the absence of the fieldlike torque, the critical current is independent of the damping constant and is much larger than that of conventional spin torque switching of collinear magnetic systems, as in magnetic tunnel junctions. With the fieldlike torque included, we find that the critical current scales with the damping constant as $α^{0}$ (i.e., damping independent),$α$, and $α^{1/2}$ depending on the sign of the fieldlike torque and other parameters such as the external field. Numerical and analytical results show that the critical current can be significantly reduced when the fieldlike torque possesses the appropriate sign, i.e. when the effective field associated with the fieldlike torque is pointing opposite to the spin direction of the incoming electrons. These results provide a pathway to reducing the current needed to switch magnetization using the spin Hall effect. △ Less

Submitted 31 July, 2015; v1 submitted 4 March, 2015; originally announced March 2015.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 92, 024428 (2015)

Current driven asymmetric magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures

Authors: Jacob Torrejon, Felipe Garcia-Sanchez, Tomohiro Taniguchi, Jaivardhan Sinha, Seiji Mitani, Joo-Von Kim, Masamitsu Hayashi

Abstract: The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic instabilities via spin transfer torques (STT). At interface(s), spin current generated from the spin Hall effect in a neighboring layer can exert torques, referred to as… ▽ More The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic instabilities via spin transfer torques (STT). At interface(s), spin current generated from the spin Hall effect in a neighboring layer can exert torques, referred to as the spin Hall torques, on the magnetic moments. Here, we study current induced magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures with a heavy metal (HM) underlayer. Depending on the thickness of the HM underlayer, we find distinct differences in the inplane field dependence of the threshold switching current. The STT is likely responsible for the magnetization reversal for the thinner underlayer films whereas the spin Hall torques cause the switching for thicker underlayer films. For the latter, we find differences in the switching current for positive and negative currents and initial magnetization directions. We find that the growth process during the film deposition introduces an anisotropy that breaks the symmetry of the system and causes the asymmetric switching. The presence of such symmetry breaking anisotropy enables deterministic magnetization switching at zero external fields. △ Less

Submitted 17 March, 2015; v1 submitted 27 October, 2014; originally announced October 2014.

Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates

Authors: Zhenchao Wen, Hiroaki Sukegawa, Shinya Kasai, Koichiro Inomata, Seiji Mitani

Abstract: We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-t… ▽ More We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching was achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. Using a thermal activation model, the intrinsic critical current density (Jc0) was determined to be 8.2 x 10^6 A/cm^2, which is lower than 2.9 x 10^7 A/cm^2, the value for epitaxial CFA-MTJs [Appl. Phys. Lett. 100, 182403 (2012)]. We found that the Gilbert damping constant evaluated using ferromagnetic resonance measurements for the polycrystalline CFA film was ~0.015 and was almost independent of the CFA thickness (2~18 nm). The low Jc0 for the polycrystalline MTJ was mainly attributed to the low damping of the CFA layer compared with the value in the epitaxial one (~0.04). △ Less

Submitted 2 August, 2014; originally announced August 2014.

Comments: 7 figures, Physical Review Applied 2014

Journal ref: Phys. Rev. Applied 2, 024009 (2014)

A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance

Authors: Zhenchao Wen, Hiroaki Sukegawa, Takao Furubayashi, Jungwoo Koo, Koichiro Inomata, Seiji Mitani, Jason Paul Hadorn, Tadakatsu Ohkubo, Kazuhiro Hono

Abstract: An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs i… ▽ More An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs incorporating this structure gave rise to the largest tunnel magnetoresistance for perpendicular MTJs using low damping Heusler alloys. The 4-fold-symmetry hexagonal Ru arises from an epitaxial growth with an unprecedentedly high crystal index, opening a unique pathway for the development of perpendicular anisotropy films of cubic and tetragonal ferromagnetic alloys. △ Less

Submitted 16 August, 2014; v1 submitted 11 July, 2014; originally announced July 2014.

Comments: Advanced Materials 2014

Journal ref: Advanced Materials 2014 10.1002/adma.201401959

Anomalous temperature dependence of current induced torques in CoFeB|MgO heterostructures with Ta based underlayers

Authors: Junyeon Kim, Jaivardhan Sinha, Seiji Mitani, Masamitsu Hayashi, Saburo Takahashi, Sadamichi Maekawa, Michihiko Yamanouchi, Hideo Ohno

Abstract: We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer thickness at which the effective field saturates is found to be different between the two orthogonal components of the effective field, i.e. the damping-like term tends to saturate at smaller underlayer thickness than th… ▽ More We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer thickness at which the effective field saturates is found to be different between the two orthogonal components of the effective field, i.e. the damping-like term tends to saturate at smaller underlayer thickness than the field-like term. For large underlayer thickness films in which the effective field saturates, we find that the temperature significantly influences the size of the effective field. A striking difference is found in the temperature dependence of the two components: the damping-like term decreases whereas the field-like term increases with increasing temperature. Using a simple spin diffusion-spin transfer model, we find that all of these results can be accounted for provided the real and imaginary parts of an effective spin mixing conductance are negative. These results imply that either spin transport in this system is different from conventional metallic interfaces or effects other spin diffusion into the magnetic layer need to be taken account in order to model the system accurately. △ Less

Submitted 25 February, 2014; originally announced February 2014.

Interface control of the magnetic chirality in CoFeB|MgO heterosctructures with heavy metal underlayers

Authors: Jacob Torrejon, Junyeon Kim, Jaivardhan Sinha, Seiji Mitani, Masamitsu Hayashi, Michihiko Yamanouchi, Hideo Ohno

Abstract: Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Neel-type domain wall that can be driven by the spin Hall torque, a torque resulting from the spin current generated in a neighboring non-magnetic l… ▽ More Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Neel-type domain wall that can be driven by the spin Hall torque, a torque resulting from the spin current generated in a neighboring non-magnetic layer via the spin Hall effect. Here we show that the strength and sign of the DMI can be changed by modifying the adjacent heavy metal underlayer (X) in perpendicularly magnetized X|CoFeB|MgO heterstructures. Albeit the same spin Hall angle, a domain wall moves along or against the electron flow depending on the underlayer. We find that the sense of rotation of a domain wall spiral11 is reversed when the underlayer is changed from Hf to W and the strength of DMI varies as the number of 5d electrons of the heavy metal layer changes. The DMI can even be tuned by adding nitrogen to the underlayer, thus allowing interface engineering of the magnetic texture in ultrathin magnetic heterostructures. △ Less

Submitted 15 January, 2014; originally announced January 2014.

Comments: Extended version of arXiv:1308.1751

Interface control of the magnetic chirality in TaN|CoFeB|MgO heterosctructures

Authors: Jacob Torrejon, Junyeon Kim, Jaivardhan Sinha, Michihiko Yamanouchi, Seiji Mitani, Masamitsu Hayashi, Hideo Ohno

Abstract: Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Neel-type domain wall that can be driven by the spin Hall torque, a torque resulting from the spin current generated in a neighboring non-magnetic l… ▽ More Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Neel-type domain wall that can be driven by the spin Hall torque, a torque resulting from the spin current generated in a neighboring non-magnetic layer via the spin Hall effect. Here we show that the sign of the DMI, which determines the direction to which a domain wall moves with current, can be changed by modifying the adjacent non-magnetic layer. We find that the sense of rotation of a domain wall spiral is reversed when the Ta underlayer is doped with nitrogen in Ta|CoFeB|MgO heterostructures. The spin Hall angle of the Ta and nitrogen doped Ta underlayers carry the same sign, suggesting that the sign of the DMI is defined at the interface. Depending on the sense of rotation, spin transfer torque and spin Hall torque can either compete or assist each other, thus influencing the efficiency of moving domain walls with current. △ Less

Submitted 8 August, 2013; originally announced August 2013.

Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

Authors: Jaivardhan Sinha, Masamitsu Hayashi, Andrew J. Kellock, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Seiji Mitani, See-hun Yang, Stuart S. P. Parkin, Hideo Ohno

Abstract: We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping.… ▽ More We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ~1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for Spintronics applications including magnetic tunnel junctions and domain wall devices. △ Less

Submitted 28 May, 2013; originally announced May 2013.

Microwave assisted resonant domain wall nucleation in permalloy nanowires

Authors: Masamitsu Hayashi, Yukiko K. Takahashi, Seiji Mitani

Abstract: We have designed a system to study microwave assisted domain wall nucleation in permalloy nanowires. We find a substantial decrease in the nucleation field when microwave fields are applied, in comparison to pulse fields. A clear resonance peak is observed in the frequency dependence of the nucleation field, which coincides with the uniform mode ferromagnetic resonance frequency. Owing to the well… ▽ More We have designed a system to study microwave assisted domain wall nucleation in permalloy nanowires. We find a substantial decrease in the nucleation field when microwave fields are applied, in comparison to pulse fields. A clear resonance peak is observed in the frequency dependence of the nucleation field, which coincides with the uniform mode ferromagnetic resonance frequency. Owing to the well-defined nucleation process, the switching field distribution is small in contrast to previous reports. Our results show that localized microwave field provides an efficient tool for injecting domain walls into magnetic nanowires. △ Less

Submitted 29 October, 2012; originally announced October 2012.

Journal ref: Appl. Phys. Lett. 101, 172406 (2012)

Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO

Authors: Junyeon Kim, Jaivardhan Sinha, Masamitsu Hayashi, Michihiko Yamanouchi, Shunsuke Fukami, Tetsuhiro Suzuki, Seiji Mitani, Hideo Ohno

Abstract: The role of current induced effective magnetic field in ultrathin magnetic heterostructures is increasingly gaining interest since it can provide efficient ways of manipulating magnetization electrically. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, quantitative understandin… ▽ More The role of current induced effective magnetic field in ultrathin magnetic heterostructures is increasingly gaining interest since it can provide efficient ways of manipulating magnetization electrically. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking. Here we show vector measurements of the current induced effective field in Ta|CoFeB|MgO heterostructrures. The effective field shows significant dependence on the Ta and CoFeB layers' thickness. In particular, 1 nm thickness variation of the Ta layer can result in nearly two orders of magnitude difference in the effective field. Moreover, its sign changes when the Ta layer thickness is reduced, indicating that there are two competing effects that contribute to the effective field. The relative size of the effective field vector components, directed transverse and parallel to the current flow, varies as the Ta thickness is changed. Our results illustrate the profound characteristics of just a few atomic layer thick metals and their influence on magnetization dynamics. △ Less

Submitted 10 July, 2012; originally announced July 2012.

Signature of Coherent Transport in Epitaxial Spinel-based Magnetic Tunnel Junctions Probed by Shot Noise Measurement

Authors: Takahiro Tanaka, Tomonori Arakawa, Kensaku Chida, Yoshitaka Nishihara, Daichi Chiba, Kensuke Kobayashi, Teruo Ono, Hiroaki Sukegawa, Shinya Kasai, Seiji Mitani

Abstract: We measured the shot noise in fully epitaxial Fe/MgAl2OX/Fe-based magnetic tunneling junctions (MTJs). While the Fano factor to characterize the shot noise is very close to unity in the antiparallel configuration, it is reduced to 0.98 in the parallel configuration. This observation shows the sub-Poissonian process of electron tunneling in the parallel configuration, indicating the coherent tunnel… ▽ More We measured the shot noise in fully epitaxial Fe/MgAl2OX/Fe-based magnetic tunneling junctions (MTJs). While the Fano factor to characterize the shot noise is very close to unity in the antiparallel configuration, it is reduced to 0.98 in the parallel configuration. This observation shows the sub-Poissonian process of electron tunneling in the parallel configuration, indicating the coherent tunneling through the spinel-based tunneling barrier of the MTJ. △ Less

Submitted 31 May, 2012; originally announced May 2012.

Comments: 3 pages, 3 figures

Journal ref: Appl.Phys.Express. 5 053003(2012)

Large amplitude microwave emission and reduced nonlinear phase noise in Co2Fe(Ge0.5Ga0.5) Heusler alloy based pseudo spin valve nanopillars

Authors: Jaivardhan Sinha, Masamitsu Hayashi, Yukiko K. Takahashi, Tomohiro Taniguchi, Maksim Drapeko, Seiji Mitani, Kazuhiro Hono

Abstract: We have studied microwave emission from a current-perpendicular-to-plane pseudo spin valve nanopillars with Heusler alloy Co2Fe(Ga0.5Ge0.5) electrodes. Large emission amplitude exceeding 150 nV/Hz^0.5, partly owing to the large magnetoresistance, and narrow generation linewidth below 10 MHz are observed. We also find that the linewidth shows significant dependence on the applied field magnitude an… ▽ More We have studied microwave emission from a current-perpendicular-to-plane pseudo spin valve nanopillars with Heusler alloy Co2Fe(Ga0.5Ge0.5) electrodes. Large emission amplitude exceeding 150 nV/Hz^0.5, partly owing to the large magnetoresistance, and narrow generation linewidth below 10 MHz are observed. We also find that the linewidth shows significant dependence on the applied field magnitude and its angle within the film plane. A minimum in the linewidth is observed when the slope of the frequency versus current becomes near zero. This agrees with theoretical prediction that takes into account non-linear phase noise as a source for linewidth broadening. △ Less

Submitted 19 November, 2011; originally announced November 2011.

Journal ref: Appl. Phys. Lett. 99, 162508 (2011)

The SPICA coronagraphic instrument (SCI) for the study of exoplanets

Authors: K. Enya, T. Kotani, K. Haze, K. Aono, T. Nakagawa, H. Matsuhara, H. Kataza, T. Wada, M. Kawada, K. Fujiwara, M. Mita, S. Takeuchi, K. Komatsu, S. Sakai, H. Uchida, S. Mitani, T. Yamawaki, T. Miyata, S. Sako, T. Nakamura, K. Asano, T. Yamashita, N. Narita, T. Matsuo, M. Tamura , et al. (17 additional authors not shown)

Abstract: We present the SPICA Coronagraphic Instrument (SCI), which has been designed for a concentrated study of extra-solar planets (exoplanets). SPICA mission provides us with a unique opportunity to make high contrast observations because of its large telescope aperture, the simple pupil shape, and the capability for making infrared observations from space. The primary objectives for the SCI are the di… ▽ More We present the SPICA Coronagraphic Instrument (SCI), which has been designed for a concentrated study of extra-solar planets (exoplanets). SPICA mission provides us with a unique opportunity to make high contrast observations because of its large telescope aperture, the simple pupil shape, and the capability for making infrared observations from space. The primary objectives for the SCI are the direct coronagraphic detection and spectroscopy of Jovian exoplanets in infrared, while the monitoring of transiting planets is another important target. The specification and an overview of the design of the instrument are shown. In the SCI, coronagraphic and non-coronagraphic modes are applicable for both an imaging and a spectroscopy. The core wavelength range and the goal contrast of the coronagraphic mode are 3.5--27$μ$m, and 10$^{-6}$, respectively. Two complemental designs of binary shaped pupil mask coronagraph are presented. The SCI has capability of simultaneous observations of one target using two channels, a short channel with an InSb detector and a long wavelength channel with a Si:As detector. We also give a report on the current progress in the development of key technologies for the SCI. △ Less

Submitted 16 August, 2011; originally announced August 2011.

Comments: 22 pages, 10 figures

Journal ref: AdSR, 48, 323 (2011)

Spin-dependent tunneling and Coulomb blockade in ferromagnetic nanoparticles

Authors: Kay Yakushiji, Franck Ernult, Seiji Mitani, Koki Takanashi, Hiroyasu Fujimori

Abstract: We review studies on spin-dependent tunneling phenomena in systems containing ferromagnetic nanoparticles. We discuss preparation methods of assembling nanoparticles as well as the mechanisms and results of spin-dependent transport properties. The emphasis of this review is on characteristic spin-dependent tunneling phenomena such as enhanced tunnel magnetoresistance (TMR) due to co-tunneling in… ▽ More We review studies on spin-dependent tunneling phenomena in systems containing ferromagnetic nanoparticles. We discuss preparation methods of assembling nanoparticles as well as the mechanisms and results of spin-dependent transport properties. The emphasis of this review is on characteristic spin-dependent tunneling phenomena such as enhanced tunnel magnetoresistance (TMR) due to co-tunneling in the Coulomb blockade regime and sign changes of the TMR due to spin accumulation in nanoparticles. △ Less

Submitted 18 September, 2007; originally announced September 2007.

Comments: 41pages, 30 figures

Journal ref: Physics Reports, 451 (2007) 1-35

Effect of Coulomb blockade on STM current through a granular film

Authors: H. Imamura, J. Chiba, S. Mitani, K. Takanashi, S. Takahashi, S. Maekawa, H. Fujimori

Abstract: The electron transport through an array of tunnel junctions consisting of an STM tip and a granular film is studied both theoretically and experimentally. When the tunnel resistance between the tip and a granule on the surface is much larger than those between granules, a bottleneck of the tunneling current is created in the array. It is shown that the period of the Coulomb staircase(CS) is giv… ▽ More The electron transport through an array of tunnel junctions consisting of an STM tip and a granular film is studied both theoretically and experimentally. When the tunnel resistance between the tip and a granule on the surface is much larger than those between granules, a bottleneck of the tunneling current is created in the array. It is shown that the period of the Coulomb staircase(CS) is given by the capacitance at the bottleneck. Our STM experiments on Co-Al-O granular films show the CS with a single period at room temperature. This provides a new possibility for single-electron-spin-electronic devices at room temperature. △ Less

Submitted 19 April, 1999; originally announced April 1999.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 61, 46 (2000)