Showing 1–17 of 17 results for author: Mendelson, N

Quantum emitter formation in carbon-doped monolayer hexagonal boron nitride

Authors: Hongwei Liu, Noah Mendelson, Irfan H. Abidi, Shaobo Li, Zhenjing Liu, Yuting Cai, Kenan Zhang, Jiawen You, Mohsen Tamtaji, Hoilun Wong, Yao Ding, Guojie Chen, Igor Aharonovich, Zhengtang Luo

Abstract: Single photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single photon emitters in hBN originate from carbon-related defects. H… ▽ More Single photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single photon emitters in hBN originate from carbon-related defects. Here we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4 fold for B-C bonds and 1.6 fold for N-C bonds. For the same samples we observe an increase in SPE density from 0.13 to 0.30 emitters/um2. Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced 2D quantum state engineering. △ Less

Submitted 10 October, 2021; originally announced October 2021.

Coupling Spin Defects in a Layered Material to Nanoscale Plasmonic Cavities

Authors: Noah Mendelson, Ritika Ritika, Mehran Kianinia, John Scott, Sejeong Kim, Johannes E. Fröch, Camilla Gazzana, Mika Westerhausen, Licheng Xiao, Seyed Sepehr Mohajerani, Stefan Strauf, Milos Toth, Igor Aharonovich, Zai-Quan Xu

Abstract: Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit weak photoluminescence. In this work, we demonstrate a scalable approach to dramatically enhance the VB- emission by coupling to a plasmonic gap cavity. The plasmo… ▽ More Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit weak photoluminescence. In this work, we demonstrate a scalable approach to dramatically enhance the VB- emission by coupling to a plasmonic gap cavity. The plasmonic cavity is composed of a flat gold surface and a silver cube, with few-layer hBN flakes positioned in between. Employing these plasmonic cavities, we extracted two orders of magnitude in photoluminescence enhancement associated with a corresponding 2 fold enhancement in optically detected magnetic resonance contrast. The work will be pivotal to progress in quantum sensing employing 2D materials, and realisation of nanophotonic devices with spin defects in hexagonal boron nitride. △ Less

Submitted 5 August, 2021; originally announced August 2021.

Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride

Authors: Hannah L. Stern, John Jarman, Qiushi Gu, Simone Eizagirre Barker, Noah Mendelson, Dipankar Chugh, Sam Schott, Hoe H. Tan, Henning Sirringhaus, Igor Aharonovich, Mete Atatüre

Abstract: Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from pre… ▽ More Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Direct growth of hexagonal boron nitride on photonic chips for high-throughput characterization

Authors: Evgenii Glushkov, Noah Mendelson, Andrey Chernev, Ritika Ritika, Martina Lihter, Reza R. Zamani, Jean Comtet, Vytautas Navikas, Igor Aharonovich, Aleksandra Radenovic

Abstract: Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip whic… ▽ More Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip which introduces contamination, potentially altering the characterization results. Here we present a unique approach to circumvent these shortfalls by directly growing a widely-used 2D material (hexagonal boron nitride, hBN) on silicon nitride chips, and optically characterizing the defects in the intact as-grown material. We compare the direct growth approach to the standard wet transfer method, and confirm the clear advantages of the direct growth. While demonstrated with hBN in the current work, the method is easily extendable to other 2D materials. △ Less

Submitted 29 March, 2021; originally announced March 2021.

Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride

Authors: Chi Li, Noah Mendelson, Ritika Ritika, Yong-Liang Chen, Zai-Quan Xu, Milos Toth, Igor Aharonovich

Abstract: We demonstrate the fabrication of large-scale arrays of single photon emitters (SPEs) in hexagonal boron nitride (hBN). Bottom-up growth of hBN onto nanoscale arrays of dielectric pillars yields corresponding arrays of hBN emitters at the pillar sites. Statistical analysis shows that the pillar diameter is critical for isolating single defects, and diameters of ~250 nm produce a near-unity yield o… ▽ More We demonstrate the fabrication of large-scale arrays of single photon emitters (SPEs) in hexagonal boron nitride (hBN). Bottom-up growth of hBN onto nanoscale arrays of dielectric pillars yields corresponding arrays of hBN emitters at the pillar sites. Statistical analysis shows that the pillar diameter is critical for isolating single defects, and diameters of ~250 nm produce a near-unity yield of a single emitter at each pillar site. Our results constitute a promising route towards spatially-controlled generation of hBN SPEs and provide an effective and efficient method to create large scale SPE arrays. The results pave the way to scalability and high throughput fabrication of SPEs for advanced quantum photonic applications. △ Less

Submitted 4 March, 2021; originally announced March 2021.

Comments: 13 pages, 4 figures

Tunable quantum photonics platform based on fiber-cavity enhanced single photon emission from two-dimensional hBN

Authors: Stefan Häußler, Gregor Bayer, Richard Waltrich, Noah Mendelson, Chi Li, David Hunger, Igor Aharonovich, Alexander Kubanek

Abstract: Realization of quantum photonic devices requires coupling single quantum emitters to the mode of optical resonators. In this work we present a hybrid system consisting of defect centers in few-layer hBN grown by chemical vapor deposition and a fiber-based Fabry-Perot cavity. The sub 10 nm thickness of hBN and its smooth surface enables efficient integration into the cavity mode. We operate our hyb… ▽ More Realization of quantum photonic devices requires coupling single quantum emitters to the mode of optical resonators. In this work we present a hybrid system consisting of defect centers in few-layer hBN grown by chemical vapor deposition and a fiber-based Fabry-Perot cavity. The sub 10 nm thickness of hBN and its smooth surface enables efficient integration into the cavity mode. We operate our hybrid platform over a broad spectral range larger than 30 nm and use its tuneability to explore different coupling regimes. Consequently, we achieve very large cavity-assisted signal enhancement up to 50-fold and equally strong linewidth narrowing owing to cavity funneling, both records for hBN-cavity systems. Additionally, we implement an excitation and readout scheme for resonant excitation that allows us to establish cavity-assisted PLE spectroscopy. Our work marks an important milestone for the deployment of 2D materials coupled to fiber-based cavities in practical quantum technologies. △ Less

Submitted 23 June, 2020; originally announced June 2020.

Comments: 7 pages, 5 figures

Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

Authors: Noah Mendelson, Luis Morales, Chi Li, Ritika Ritika, Minh Anh Phan Nguyen, Jacqueline Loyola-Echeverria, Sejeong Kim, Stephan Gotzinger, Milos Toth, Igor Aharonovich

Abstract: Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate. Combining a range of characterization techniques, we demonstrate that the incorporation of quantum emitters is limited to (… ▽ More Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate. Combining a range of characterization techniques, we demonstrate that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. We further utilize these emitters and integrate them with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ~2.9 x106 cps and an average photon purity of ~90%. Our results advance the controlled generation of spatially distributed quantum emitters in hBN and demonstrate a key step towards on-chip devices with maximum collection efficiency. △ Less

Submitted 21 May, 2020; originally announced May 2020.

Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride

Authors: Noah Mendelson, Dipankar Chugh, Jeffrey R. Reimers, Tin S. Cheng, Andreas Gottscholl, Hu Long, Christopher J. Mellor, Alex Zettl, Vladimir Dyakonov, Peter H. Beton, Sergei V. Novikov, Chennupati Jagadish, Hark Hoe Tan, Michael J. Ford, Milos Toth, Carlo Bradac, Igor Aharonovich

Abstract: Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by… ▽ More Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices. △ Less

Submitted 20 April, 2020; v1 submitted 2 March, 2020; originally announced March 2020.

Strain Engineering of Quantum Emitters in Hexagonal Boron Nitride

Authors: Noah Mendelson, Marcus Doherty, Milos Toth, Igor Aharonovich, Toan Trong Tran

Abstract: Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record f… ▽ More Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks. △ Less

Submitted 10 January, 2020; v1 submitted 18 November, 2019; originally announced November 2019.

Coupling hBN quantum emitters to 1D photonic crystal cavities

Authors: Johannes E. Fröch, Sejeong Kim, Noah Mendelson, Mehran Kianinia, Milos Toth, Igor Aharonovich

Abstract: Quantum photonics technologies require a scalable approach for integration of non-classical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal Boron Nitride (hBN) are amongst the front runners for single photon sources due to their ultra bright emission, however, coupling of hBN defects to photonic crys… ▽ More Quantum photonics technologies require a scalable approach for integration of non-classical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal Boron Nitride (hBN) are amongst the front runners for single photon sources due to their ultra bright emission, however, coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and achieve experimentally measured Q-factor of 3,300 for hBN/Si3N4 hybrid cavities. We observed 9-fold photoluminescence enhancement of a hBN single photon emission at room temperature. Our work paves the way towards hybrid integrated quantum photonics with hBN, and outlines an excellent path for further development of cavity quantum electrodynamic experiments and on-chip integration of 2D materials. △ Less

Submitted 6 November, 2019; originally announced November 2019.

Low-temperature electron-phonon interaction of quantum emitters in hexagonal Boron Nitride

Authors: Gabriele Grosso, Hyowon Moon, Christopher J. Ciccarino, Johannes Flick, Noah Mendelson, Milos Toth, Igor Aharonovich, Prineha Narang, Dirk R. Englund

Abstract: Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like emitters, defect-phonon coupling in hBN governs the characteristic single-photon emission and provides an opportunity to investigate the atomic and electronic structu… ▽ More Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like emitters, defect-phonon coupling in hBN governs the characteristic single-photon emission and provides an opportunity to investigate the atomic and electronic structure of emitters as well as the coupling of their spin- and charge-dependent electronic states to phonons. Here, we investigate these questions using photoluminescence excitation (PLE) experiments at T=4K on single photon emitters in multilayer hBN grown by chemical vapor deposition. By scanning up to 250 meV from the zero phonon line (ZPL), we can precisely measure the emitter's coupling efficiency to different phonon modes. Our results show that excitation mediated by the absorption of one in-plane optical phonon increases the emitter absorption probability ten-fold compared to that mediated by acoustic or out-of-plane optical phonons. We compare these measurements against theoretical predictions by first-principles density-functional theory of four defect candidates, for which we calculate prevalent charge states and their spin-dependent coupling to bulk and local phonon modes. Our work illuminates the phonon-coupled dynamics in hBN quantum emitters at cryogenic temperature, with implications more generally for mesoscopic quantum emitter systems in 2D materials and represents possible applications in solid-state quantum technologies. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Integrated on chip platform with quantum emitters in layered materials

Authors: Sejeong Kim, Ngoc My Hanh Duong, Minh Nguyen, Tsung-Ju Lu, Mehran Kianinia, Noah Mendelson, Alexander Solntsev, Carlo Bradac, Dirk R. Englund, Igor Aharonovich

Abstract: Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort has been devoted to engineering on-chip systems from three-dimensional crystals such as diamond or gallium arsenide. In this study, we demonstrate room temperature coupling of quantum emitters embedded within a layered hexag… ▽ More Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort has been devoted to engineering on-chip systems from three-dimensional crystals such as diamond or gallium arsenide. In this study, we demonstrate room temperature coupling of quantum emitters embedded within a layered hexagonal boron nitride to an on-chip aluminium nitride waveguide. We achieved 1.2% light coupling efficiency of the device and realise transmission of single photons through the waveguide. Our results serve as a foundation for the integration of layered materials with on-chip components and for the realisation of integrated quantum photonic circuitry. △ Less

Submitted 10 July, 2019; originally announced July 2019.

Charge transition levels of quantum emitters in hexagonal boron nitride

Authors: Zai-Quan Xu, Noah Mendelson, John A. Scott, Chi Li, Igor Aharonovich, Milos Toth

Abstract: Quantum emitters in layered materials are promising candidates for applications in nanophotonics. Here we present a technique based on charge transfer to graphene for measuring the charge transition levels ($\rm E_t$) of fluorescent defects in a wide bandgap 2D material, and apply it to quantum emitters in hexagonal boron nitride (hBN). Our results will aid in identifying the atomic structures of… ▽ More Quantum emitters in layered materials are promising candidates for applications in nanophotonics. Here we present a technique based on charge transfer to graphene for measuring the charge transition levels ($\rm E_t$) of fluorescent defects in a wide bandgap 2D material, and apply it to quantum emitters in hexagonal boron nitride (hBN). Our results will aid in identifying the atomic structures of quantum emitters in hBN, as well as practical applications since $\rm E_t$ determines defect charge states and plays a key role in photodynamics. △ Less

Submitted 30 June, 2019; originally announced July 2019.

Direct Measurement of Quantum Efficiency of Single Photon Emitters in Hexagonal Boron Nitride

Authors: Niko Nikolay, Noah Mendelson, Ersan Özelci, Bernd Sontheimer, Florian Böhm, Günter Kewes, Milos Toth, Igor Aharonovich, Oliver Benson

Abstract: Single photon emitters in two-dimensional materials are promising candidates for future generation of quantum photonic technologies. In this work, we experimentally determine the quantum efficiency (QE) of single photon emitters (SPE) in few-layer hexagonal boron nitride (hBN). We employ a metal hemisphere that is attached to the tip of an atomic force microscope to directly measure the lifetime v… ▽ More Single photon emitters in two-dimensional materials are promising candidates for future generation of quantum photonic technologies. In this work, we experimentally determine the quantum efficiency (QE) of single photon emitters (SPE) in few-layer hexagonal boron nitride (hBN). We employ a metal hemisphere that is attached to the tip of an atomic force microscope to directly measure the lifetime variation of the SPEs as the tip approaches the hBN. This technique enables non-destructive, yet direct and absolute measurement of the QE of SPEs. We find that the emitters exhibit very high QEs approaching $(87 \pm 7)\,\%$ at wavelengths of $\approx\,580\,\mathrm{nm}$, which is amongst the highest QEs recorded for a solid state single photon emitter. △ Less

Submitted 17 April, 2019; originally announced April 2019.

Selective Defect Formation in Hexagonal Boron Nitride

Authors: Irfan H. Abidi, Noah Mendelson, Toan Trong Tran, Abhishek Tyagi, Minghao Zhuang, Lu-Tao Weng, Barbaros Ozyilmaz, Igor Aharonovich, Milos Toth, Zhengtang Luo

Abstract: Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabr… ▽ More Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabricate hBN single photon emitters (SPEs) with desired emission properties in two isolated spectral regions via the manipulation of boron diffusion through copper during atmospheric pressure chemical vapor deposition (APCVD)--a process we term gettering. Using the gettering technique we deterministically place the resulting zero-phonon line (ZPL) between the regions 550-600 nm or from 600-650 nm, paving the way for hBN SPEs with tailored emission properties across a broad spectral range. Our ability to control defect formation during hBN growth provides a simple and cost-effective means to improve the crystallinity of CVD hBN films, and lower defect density making it applicable to hBN growth for a wide range of applications. Our results are important to understand defect formation of quantum emitters in hBN and deploy them for scalable photonic technologies. △ Less

Submitted 24 February, 2019; v1 submitted 21 February, 2019; originally announced February 2019.

Very Large and Reversible Stark Shift Tuning of Single Emitters in Layered Hexagonal Boron Nitride

Authors: Niko Nikolay, Noah Mendelson, Nikola Sadzak, Florian Böhm, Toan Trong Tran, Bernd Sontheimer, Igor Aharonovich, Oliver Benson

Abstract: Combining solid state single photon emitters (SPE) with nanophotonic platforms is a key goal in integrated quantum photonics. In order to realize functionality in potentially scalable elements, suitable SPEs have to be bright, stable, and widely tunable at room temperature. In this work we show that selected SPEs embedded in a few layer hexagonal boron nitride (hBN) meet these demands. In order to… ▽ More Combining solid state single photon emitters (SPE) with nanophotonic platforms is a key goal in integrated quantum photonics. In order to realize functionality in potentially scalable elements, suitable SPEs have to be bright, stable, and widely tunable at room temperature. In this work we show that selected SPEs embedded in a few layer hexagonal boron nitride (hBN) meet these demands. In order to show the wide tunability of these SPEs we employ an AFM with a conductive tip to apply an electrostatic field to individual hBN emitters sandwiched between the tip and an indium tin oxide coated glass slide. A very large and reversible Stark shift of $(5.5 \pm 3)\,$nm at a zero field wavelength of $670\,$nm was induced by applying just $20\,$V, which exceeds the typical resonance linewidths of nanodielectric and even nanoplasmonic resonators. Our results are important to further understand the physical origin of SPEs in hBN as well as for practical quantum photonic applications where wide spectral tuning and on/off resonance switching are required. △ Less

Submitted 6 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Applied 11, 041001 (2019)

Bottom up engineering of near-identical quantum emitters in atomically thin materials

Authors: Noah Mendelson, Zai-Quan Xu, Toan Trong Tran, Mehran Kianinia, Carlo Bradac, John Scott, Minh Nguyen, James Bishop, Johannes Froch, Blake Regan, Igor Aharonovich, Milos Toth

Abstract: Quantum technologies require robust and photostable single photon emitters (SPEs) that can be reliably engineered. Hexagonal boron nitride (hBN) has recently emerged as a promising candidate host to bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled. The emitters usually disp… ▽ More Quantum technologies require robust and photostable single photon emitters (SPEs) that can be reliably engineered. Hexagonal boron nitride (hBN) has recently emerged as a promising candidate host to bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled. The emitters usually display a large spread of zero phonon line (ZPL) energies spanning over a broad spectral range (hundreds of nanometers), which hinders the potential development of hBN-based devices and applications. We demonstrate bottom-up, chemical vapor deposition growth of large-area, few layer hBN that hosts large quantities of SPEs: 100 per 10x10 μm2. Remarkably, more than 85 percent of the emitters have a ZPL at (580{\pm}10)nm, a distribution which is over an order of magnitude narrower than previously reported. Exploiting the high density and uniformity of the emitters, we demonstrate electrical modulation and tuning of the ZPL emission wavelength by up to 15 nm. Our results constitute a definite advancement towards the practical deployment of hBN single photon emitters in scalable quantum photonic and hybrid optoelectronic devices based on 2D materials. △ Less

Submitted 4 June, 2018; originally announced June 2018.