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Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$
Authors:
Takuma Ogasawara,
Kim-Khuong Huynh,
Stephane Yu Matsushita,
Motoi Kimata,
Time Tahara,
Takanori Kida,
Masayuki Hagiwara,
Denis Arčon,
Katsumi Tanigaki
Abstract:
We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn$_2$Bi$_2$ that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measu…
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We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn$_2$Bi$_2$ that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measurements in combination with electronic band calculations reveal a strong orbital-dependent correlation effect, where both weakly and strongly correlated $3d$-derived bands coexist with decoupled charge excitations. Weakly correlated holelike carriers in the $d_{xy}$-derived band dominate the transport properties and exhibit the Anderson localization, whereas other $3d$ bands show clear Mott-like behaviors with their spins ordered into AF sublattices. The tuning role played by the perpendicular magnetic field supports a strong spin-spin coupling between itinerant holelike carriers and the AF fluctuations, which is in sharp contrast to their weak charge coupling.
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Submitted 7 June, 2022; v1 submitted 4 January, 2022;
originally announced January 2022.
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Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet
Authors:
Takuma Ogasawara,
Kim-Khuong Huynh,
Time Tahara,
Takanori Kida,
Masayuki Hagiwara,
Denis Arčon,
Motoi Kimata,
Stephane Yu Matsushita,
Kazumasa Nagata,
Katsumi Tanigaki
Abstract:
A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic field eventually suppresses the insulating behavior and allows BaMn$_2$Bi$_2$ to re-enter a metallic state. This effect is seemingly unrelated to any fie…
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A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic field eventually suppresses the insulating behavior and allows BaMn$_2$Bi$_2$ to re-enter a metallic state. This effect is seemingly unrelated to any field induced magnetic phase transition, as measurements of magnetic susceptibility and specific heat did not find any anomaly as a function of magnetic fields at temperatures above $2\,\mathrm{K}$. The LNMR appears in both current-in-plane and current-out-of-plane settings, and Hall effects suggest that its origin lies in an extreme sensitivity of conduction processes of holelike carriers to the infinitesimal field-induced canting of the sublattice magnetization. The LNMR-induced metallic state may thus be associated with the breaking of the antiferromagnetic parity-time symmetry by perpendicular magnetic fields and/or the intricate multi-orbital electronic structure of BaMn$_2$Bi$_2$.
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Submitted 17 February, 2021; v1 submitted 2 October, 2020;
originally announced October 2020.
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Ultrathin film of 3D topological insulators by vapor-phase epitaxy: Surface dominant transport in wide temperature revealed by Seebeck measurement
Authors:
Stephane Yu Matsushita,
Khuong Kim Huynh,
Katsumi Tanigaki
Abstract:
Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here systematic measurements of longitudinal electrical transport, Shubnikov-de-Haas (SdH) quantum oscillations, Hall coefficient (R_H^2D), and Seebeck coefficient as…
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Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here systematic measurements of longitudinal electrical transport, Shubnikov-de-Haas (SdH) quantum oscillations, Hall coefficient (R_H^2D), and Seebeck coefficient as a function of film thickness (d) and temperature using high quality Bi2-xSbxTe3-ySey (BSTS) single crystal thin films grown by physical vapor-phase deposition. The thickness dependence of sheet conductance and Seebeck coefficient clearly show the suppression of semiconducting hole carriers of bulk states by reducing film thickness, reaching to the surface dominant transport at below dc=14 nm. Quantitative arguments are made as to how the contribution of itinerant carrier number (n) can be suppressed, using both R_H^2D (n_Hall^2D) and SdH (n_SdH). Intriguingly, the value of n_Hall^2D approaches to be twice of n_SdH below dc. While R_H^2D shows a negative sign in whole temperature region, a change from negative to positive polarity is clearly observed for S at high temperatures when d is thick. We point out that this inconsistency observed between R_H^2D and S is intrinsic in 3D-TIs and its origin is the large difference in carrier mobility between the bulk and the topological surface. We propose that Seebeck coefficient can become a convenient and powerful tool to evaluate the intrinsic carrier concentration for the topological surface in 3D-TIs even in the absence of magnetic field.
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Submitted 20 December, 2018;
originally announced December 2018.
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Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances
Authors:
Kim-Khuong Huynh,
Takuma Ogasawara,
Keita Kitahara,
Yoichi Tanabe,
Stephane Yu Matsushita,
Time Tahara,
Takanori Kida,
Masayuki Hagiwara,
Denis Arčon,
Katsumi Tanigaki
Abstract:
We report the discovery of a novel giant magnetoresistance (GMR) phenomenon in a family of BaMn$_{2}$Pn$_{2}$ antiferromagnets (Pn stands for P, As, Sb, and Bi) with a parity-time symmetry. The resistivities of these materials are reduced by $60$ times in magnetic fields ($\vec{H}$'s), thus yielding the GMR of about $-98\%$. The GMR changes systematically along with the Pn elements, hinting that i…
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We report the discovery of a novel giant magnetoresistance (GMR) phenomenon in a family of BaMn$_{2}$Pn$_{2}$ antiferromagnets (Pn stands for P, As, Sb, and Bi) with a parity-time symmetry. The resistivities of these materials are reduced by $60$ times in magnetic fields ($\vec{H}$'s), thus yielding the GMR of about $-98\%$. The GMR changes systematically along with the Pn elements, hinting that its origin is the spin orbit coupling (SOC) and/or $d$-$p$ orbital hybridization. A positive MR component emerging on top of the negative GMR at low temperatures suggests an orbital-sensitive magnetotransport as $\vec{H}$ suppresses the conduction of the electron-like carriers in the $d$-like band but enhances those of hole-like ones in the $d$-$p$ hybridized band. The anisotropy of the GMR reveals that the electrical conductivity is extremely sensitive to the minute changes in the direction of the antiferromagnetic moments induced by the parity-time breaking $\vec{H}$, which seems to be associated with a magnetoelectric effect in the dynamic regime of conduction electrons. We attribute the observed GMR to the non-trivial low energy band of BMPn's, which is governed by the parity-time symmetry and an magnetic hexadecapole ordering.
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Submitted 21 November, 2018; v1 submitted 14 November, 2018;
originally announced November 2018.
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Thermoelectric properties of 3D topological insulator: Direct observation of topological surface and its gap opened states
Authors:
Stephane Yu Matsushita,
Khuong Kim Huynh,
Harukazu Yoshino,
Ngoc Han Tu,
Yoichi Tanabe,
Katsumi Tanigaki
Abstract:
We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological st…
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We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological state (g-TSDS), are successfully observed by electrical transport, and important TE parameters (electrical conductivity ($σ$), thermal conductivity ($κ$), and thermopower ($S$)) are accurately determined. Pure m-TSDS gives $S$=-44 μVK$^{-1}$, which is an order of magnitude higher than those of the conventional metals and the value is enhanced to -212 μVK$^{-1}$ for g-TSDS. It is clearly shown that the semi-classical Boltzmann transport equation (SBTE) in the framework of constant relaxation time ($τ$) most frequently used for conventional analysis cannot be valid in 3D-TIs and strong energy dependent relaxation time $τ(E)$ beyond the Born approximation is essential for making intrinsic interpretations. Although $σ$ is protected on the m-TSDS, $κ$ is greatly influenced by the disorder on the topological surface, giving a dissimilar effect between topologically protected electronic conduction and phonon transport.
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Submitted 30 March, 2017;
originally announced March 2017.
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Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition
Authors:
Ngoc Han Tu,
Yoichi Tanabe,
Yosuke Satake,
Khuong Kim Huynh,
Le Huu Phuoc,
Stephane Yu Matsushita,
Katsumi Tanigaki
Abstract:
Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three dimensional topological insulator (3D-TI) Bi2-xSbxTe3-ySey (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of…
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Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three dimensional topological insulator (3D-TI) Bi2-xSbxTe3-ySey (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of layaers, on mica in a large-area (1 cm2) via catalyst free physical vapor deposition. These films can nondestructively be exfoliated using deionized water and transferred to various kinds of substrates as desired. The transferred BSTS thin films show good ambipolar characteristics as well as well defined quantum oscillations arising from the topological surface states. Carrier mobility of 2500-5100 cm2(Vs)-1 is comparable to the high quality bulk BSTS single crystal. Moreover, tunable electronic states from the massless to the massive Dirac fermion were observed with a decrease in the film thickness. Both the feasible large area synthesis and the reliable film transfer process can promise that BSTS ultrathin films will pave a route to many applications of 3D-TIs.
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Submitted 13 April, 2017; v1 submitted 25 January, 2016;
originally announced January 2016.
