Showing 1–1 of 1 results for author: Mal, S S
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Dependence of the 0.5(2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates
Authors:
P. P. Das,
A. Jones,
M. Cahay,
S. Kalita,
S. S. Mal,
N. S. Sterin,
T. R. Yadunath,
M. Advaitha,
S. T. Herbert
Abstract:
The observation of a 0.5 conductance plateau in asymmetrically biased quantum point contacts with in-plane side gates has been attributed to the onset of spin-polarized current through these structures. For InAs quantum point contacts with the same width but longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the side gates over which the 0.5…
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The observation of a 0.5 conductance plateau in asymmetrically biased quantum point contacts with in-plane side gates has been attributed to the onset of spin-polarized current through these structures. For InAs quantum point contacts with the same width but longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the side gates over which the 0.5 conductance plateau is observed when the QPC aspect ratio (ratio of length over width of the narrow portion of the structure) is increased by a factor 3. Non-equilibrium Green s function simulations indicate that the increase in the size of the 0.5 conductance plateau is due to an increased importance, over a larger range of common sweep voltage, of the effects of electron-electron interactions in QPC devices with larger aspect ratio. The use of asymmetrically biased QPCs with in-plane side gates and large aspect ratio could therefore pave the way to build robust spin injectors and detectors for the successful implementation of spin field effect transistors
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Submitted 11 February, 2017;
originally announced February 2017.
